CN100500376C - Method for controlling CMP film thickness internal homogeneity - Google Patents
Method for controlling CMP film thickness internal homogeneity Download PDFInfo
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- CN100500376C CN100500376C CNB2006100298497A CN200610029849A CN100500376C CN 100500376 C CN100500376 C CN 100500376C CN B2006100298497 A CNB2006100298497 A CN B2006100298497A CN 200610029849 A CN200610029849 A CN 200610029849A CN 100500376 C CN100500376 C CN 100500376C
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- grinding rate
- face
- cephacoria
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Abstract
The present invention discloses a method for controlling the evenness of the CMP film thick surface; on the basis of control with only optical lens grinding velocity and evenness, the present invention adds the tendency management of the product front film range and optical lens grinding velocity; based on the collected parameters of front film range, grinding velocity tendency and used film range, analyze the relations between the used film range, the front film range and grinding velocity tendency; with these relations, choose the proper machine with parameters similar to the parameter CER according to the front film range and implement CMP exercise. The present invention can effectively control the used film range within specifications.
Description
Technical field
The present invention relates to a kind of processing technology of semiconductor devices.
Background technology
At present in chemically mechanical polishing (CMP) technology of semiconductor crystal wafer factory (FAB), the control that product is ground rear film (residual film) thickness and internal homogeneity mainly is that size and the homogeneity by monitor optical slice lapping speed realizes.The mating plate grinding rate can reflect the state of CMP equipment to a certain extent, thereby the time that the size of therefore utilizing the mating plate grinding rate usually decides product to grind is controlled residual film thickness, the homogeneity control of mating plate grinding rate is guaranteed within the specific limits the homogeneity of product thickness, and the homogeneity of thickness is generally by poor (range) between in the face, that is, the difference of the minimum and maximum thickness of multi-point reflects in the face.In general, residual film thickness range is less, helps device and has preferable performance, so require product thickness range usually in certain scope.
In the actual motion, if only the size and the homogeneity of grinding rate are monitored, the situation that residual film range exceeds specification often also can occur, disqualification rate reaches more than 20% when serious.The excessive focusing that not only directly influences the back photoetching of residual film thickness range, and thick partially place easily causes perforate bad (via open), partially Bao place can influence through hole (via) thus characteristic cause low yields.In order not influence yields, often the wafer reprocessing that range is exceeded specification is remedied, and way is the film that chases after long 3000-5000A, and then appends grinding; So not only increase the cost of manpower, material and facility greatly, and influenced the cycle of operation of product.Can reduce the phenomenon that range exceeds specification to a certain extent though tighten the size and the homogeneity of grinding rate, limit the useful life of consumptive material simultaneously again.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method of the CMP of control film thickness internal homogeneity, can be effectively the difference of the minimum and maximum thickness of multi-point in the face of residual film be controlled in the specification.
For solving the problems of the technologies described above, the present invention controls the method for CMP film thickness internal homogeneity, may further comprise the steps:
Step 2, obtain grinding rate tendency parameter (CER), monitor as grinding rate with mating plate, when every kind of membranous mating plate is monitored for the first time, earlier this membranous grinding rate is carried out the measurement and the analysis of the curve of diametric(al) scanning, determine the test point that can reflect the grinding rate tendency; When on-line testing obtained speed average and homogeneity, by calculating the tendency parameter that obtains grinding rate this moment, grinding rate tendency parameter-definition was that silicon chip is at the grinding rate of central area and the ratio of certain regional grinding rate of edge then;
Step 3, poor between obtaining in the average of residual-film thickness degree and the face, during for the first time residual film test of new product, increase the measurement of residual film being carried out the curve of diametric(al) scanning, the test point position that can reflect the product curve is determined in analysis; Poor between in the same with test in the past afterwards average that obtains the residual-film thickness degree and the face;
Step 4 selects the suitable board of tendency parameter to carry out the CMP operation, is inclined to the relation of parameter according to poor between in difference between in the residual face of data analysis of difference between in poor between in the preceding face of collecting, grinding rate tendency parameter and the residual face and the preceding face and grinding rate; The concrete scheme of difference control between the tendency parameter of difference and mating plate grinding rate is carried out in the residual face between further making in the face that utilizes the product cephacoria from above-mentioned relation, promptly, according to extent between in the preceding face, select to have and to be controlled at specification to difference between in the face of residual film and to carry out the CMP operation with the board of interior tendency parameter.
In described step 1, when cephacoria being carried out the measurement of curve of diametric(al) scanning, measuring counts equals 20 or greater than 20.
In described step 1, during to the analyzing of the curve of cephacoria diametric(al) scanning, determine 9 can reflect in the product face between the position of on-line testing point of difference feature.
The present invention can effectively be controlled at residual film in the specification under the situation that does not increase cephacoria and grinding rate testing time and precision, has prolonged the service time of CMP consumptive material, has reduced producers' burden, can effectively improve the production utilization rate of process equipment.
Description of drawings
Fig. 1 is a schematic flow sheet of the present invention;
Fig. 2 utilizes the curve of cephacoria to determine the schematic diagram of on-line testing point position, test point can be determined among this figure that be at 9, that is, 1 point in silicon chip center is apart from 4 points in center 50mm place and apart from 4 points in center 90mm place;
Fig. 3 utilizes the profile of grinding rate to determine the schematic diagram of CER location point, test point can be defined as 9 points among this figure, that is, and 1 point in silicon chip center, apart from 4 points in center 70mm place and apart from 4 points in center 90mm place, also can add 4 points again apart from center 95mm place according to product needed; The tendency parameter (CER) of speed can be selected apart from center 70mm according to product requirement, 90mm, the ratio of the grinding rate at 95mm or other point and center;
Fig. 4 utilizes the profile of residual film to determine the schematic diagram of on-line testing point position, test point can be defined as 9 points among this figure, that is, 1 point in silicon chip center is apart from 4 points in center 50mm place and apart from 4 points in center 80mm place;
Fig. 5 is the schematic diagram of cephacoria range, residual film range and grinding rate tendency parameter (CER) relation, and RG is writing a Chinese character in simplified form of range among the figure;
Fig. 6 is the schematic diagram that grinding rate tendency parameter (CER) is passed curve, and wherein, abscissa is the testing time; Ordinate is CER;
Range actual achievement when Fig. 7 is to use current techniques, the different batches of abscissa for measuring, ordinate R is range, means with the circle mark to exceed specification;
Range actual achievement when Fig. 8 is to use method provided by the present invention to control, abscissa is the different batches for measuring, ordinate R is range.
The specific embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing.
Poor (range) is not only relevant with the size and the homogeneity of mating plate grinding rate between in the face of the residual film of product, and relevant with the tendency of the range of cephacoria and grinding rate.The present invention realizes that by the management that increases the tendency of the range of cephacoria and grinding rate details are as follows to the control of residual film range:
At first be the data of collecting cephacoria range, the data that grinding rate is inclined to parameter and residual film range, its concrete grammar is as follows:
Data acquisition about cephacoria range.Before wafer arrives, measure the preceding value of thickness.The management of testing for cephacoria in the past, only carry out the management of cephacoria average, cephacoria range is not managed, also do not have clear and definite regulation for test point, to such an extent as to do not consider the influence of cephacoria, the phenomenon of residual film range ultra-specification often occurs to the residual film of CMP.The present invention at first carries out the measurement of the curve (profile) of diametric(al) scanning (diameter scan) to cephacoria before the product test first time, it is more than 20 or 20 that mensuration is counted; By the analysis of profile being determined 9 or a plurality of on-line testing points position reflecting product range feature, as shown in Figure 2; In test cephacoria average, obtain the range of cephacoria: algorithm is the difference of maximum and minimum of a value then.The for the second time later test of same engineering of same series products can directly be carried out on-line testing and obtain average.
Definition and collection about grinding rate tendency parameter.Monitoring as grinding rate with mating plate mainly is in order to reflect the state of CMP equipment.In the past for the management of mating plate grinding rate, only carry out the management of speed average and homogeneity, speed tendency parameter is not defined more and manage, there is not clear and definite regulation for test point yet, to such an extent as to do not consider of the influence of grinding rate tendency, cause the phenomenon of the residual film range of part ultra-specification to residual film range.In the present invention, grinding rate tendency parameter-definition is: silicon chip reflects the difference of silicon chip at grinding rate and other regional grinding rate of edge of central area at the grinding rate of central area and the ratio of certain regional grinding rate of edge by this parameter.When grinding rate tendency parameter greater than 1 the time, illustrate that the grinding rate of this moment has the fast tendency in centre; When grinding rate tendency parameter less than 1 the time, illustrate that grinding rate at this moment has the fast tendency in edge.The tendency parameter is approaching or equal 1, illustrates that the middle at this moment grinding rate with the edge is close.Each board in the past, per 12 or 24 hours at plasma oxide (Plasma Oxide) or the boron-phosphorosilicate glass membranous current board situations of rate detection of cooking mating plate of difference such as (BPSG), speed by multiple spot in the test surfaces, obtain the size (average) and the homogeneity of speed, the test point in the face is fixed.Such as the mating plate speed of just being HDP (high-density plasma) at STI (shallow trench isolation) CMP, just do the mating plate speed of Plasma Oxide at IMD (interlayer film medium) CMP.The present invention is by the analysis to every kind of membranous grinding rate milled-in current (diameter scan), at first determine the test point that can reflect the grinding rate tendency, as shown in Figure 3, when test obtains speed average and homogeneity, by calculating the tendency parameter (CER) of grasping grinding rate this moment.
Data acquisition about residual film range.When for the first time residual film of new product is tested, at first residual film is carried out the measurement of the curve of diametric(al) scanning, by the analysis of curve being determined the test point position that can reflect the product curve, shown in Figure 4; Obtain the average and the range of residual film as test in the past then.
Set up cephacoria range according to the data of gathering then, the corresponding relation between residual film range and the grinding rate tendency, as shown in Figure 5.By Fig. 5, can the difference of residual film range and cephacoria range be controlled within the specific limits according to the CER value.As: as CER〉0.98 the time, we can be controlled at the difference of residual film range and cephacoria range in 1200; The specification of supposing the residual film range of product is set at 2000, as long as cephacoria range is less than 800, board mating plate grinding rate CER greater than 0.98 situation under the residual film of operation product just can not exceed specification; On the other hand, when cephacoria range greater than 800 the time because residual film range might be greater than 1200 with the difference of cephacoria range, the just possible ultra-specification of residual film range during operation.Clearly, board CER is high more, and the difference of residual film range and cephacoria range is more little, and is low more to the requirement of cephacoria; For cephacoria, make residual film range in specification, cephacoria range is big more, and is high more to the requirement of board CER.
Following table is to select the guidance table of board according to cephacoria range, and the different cephacoria range that can set up according to residual film range specification by this table are inclined to an example of the requirement of parameter to the grinding rate of board that can operation.As: when cephacoria range greater than 800 the time, we are only to select CER〉0.99 equipment carries out operation; Residual film range just has the danger that exceeds specification after selecting CER less than 0.99 board operation.According to shown in the table 1, according to cephacoria range select can operation board, just the specification of residual film can be controlled in the specification.
Table 1 is selected the reference table of the board of operation according to cephacoria range
| Cephacoria Range | CMP board CER requirement |
| ＜600 | 0.90 |
| 600 ~ 800 | 0.96 |
| 800 ~ 1000 | 0.99 |
| 1000 ~ 1200 | 1.02 |
| 1200 ~ 1400 | 1.05 |
| 1400 | 1.08 |
| 。。 | 。。。 |
Operation the time has and not to have residual film range to exceed standard or near situation about exceeding standard under the control scheme according to the present invention, checks the reasonability of this control method and the control scheme is finely tuned, thereby reach effective control to residual film range.
The effect of product being ground by CER, board defective states such as (defect) take all factors into consideration the useful life that decides all kinds of consumptive materials.As the CER parameter transition diagram among Fig. 6, when CER less than 0.9 the time, even cephacoria range is very little and since this moment zone line grinding rate and neighboring area than very slow, the phenomenon that residual film range goes out specification still can appear; We can infer that with this grinding pad (pad) has arrived useful life; According to accumulation and the analysis and the defect situations such as (defectives) of similar grinding data repeatedly, infer the rational useful life of all kinds of consumptive materials, thereby reach abundant utilization all kinds of consumptive materials.
The present invention can effectively be controlled at residual film in the specification under the situation that does not increase cephacoria and grinding rate testing time and precision: the NG of residual film range is led from being reduced to below 1%, as shown in Figure 7 more than 20%.So not only prolong the service time of CMP consumptive material, and reduced the time of downtime and goods delay, thereby reduced producers' burden, effectively improved the production utilization rate of process equipment.
Claims (3)
1, a kind of method of controlling chemically mechanical polishing CMP film thickness internal homogeneity is characterized in that, may further comprise the steps:
Step 1, before obtaining in the face between difference data, before the product test first time, at first cephacoria is carried out the measurement of the curve of diametric(al) scanning, by the analysis of curve is determined can reflect in the product face between a plurality of on-line testing points position of difference feature; In on-line testing cephacoria average, test the difference of above-mentioned a plurality of on-line testing point maximum and minimum of a value then, poor between the face of acquisition cephacoria is interior;
Step 2, obtain grinding rate tendency parameter, monitor as grinding rate with mating plate, when every kind of membranous mating plate is monitored for the first time, earlier this membranous grinding rate is carried out the measurement and the analysis of the curve of diametric(al) scanning, determine the test point that can reflect the grinding rate tendency; When on-line testing obtained speed average and homogeneity, by calculating the tendency parameter that obtains grinding rate this moment, grinding rate tendency parameter-definition was that silicon chip is at the grinding rate of central area and the ratio of certain regional grinding rate of edge then;
Step 3, product is ground rear film be defined as residual film, poor between obtaining in the average of residual-film thickness degree and the face, when product carries out that the first time, residual film was tested, increase is carried out the measurement of the curve of diametric(al) scanning to residual film, analyzes and determines the test point position that can reflect the product curve; Poor between having determined to obtain after the test point position in the average of residual-film thickness degree and the face;
Step 4, select the suitable board of grinding rate tendency parameter to carry out the CMP operation, be inclined to the relation of parameter according to poor between in difference between in the residual face of data analysis of difference between in poor between in the preceding face of collecting, grinding rate tendency parameter and the residual face and the preceding face and grinding rate; The concrete scheme of difference control between the tendency parameter of difference and mating plate grinding rate is carried out in the residual face between further making in the face that utilizes the product cephacoria from above-mentioned relation, promptly, according to extent between in the preceding face, select to have and to be controlled at specification to difference between in the face of residual film and to carry out the CMP operation with the board of interior grinding rate tendency parameter.
2, the method for control chemically mechanical polishing CMP film thickness internal homogeneity according to claim 1 is characterized in that, in described step 1, when cephacoria being carried out the measurement of curve of diametric(al) scanning, measuring counts equals 20 or greater than 20.
3, the method for control chemically mechanical polishing CMP film thickness internal homogeneity according to claim 1, it is characterized in that, in described step 1, when the curve of cephacoria diametric(al) scanning is analyzed, determine 9 can reflect in the product face between the position of on-line testing point of difference feature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100298497A CN100500376C (en) | 2006-08-09 | 2006-08-09 | Method for controlling CMP film thickness internal homogeneity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100298497A CN100500376C (en) | 2006-08-09 | 2006-08-09 | Method for controlling CMP film thickness internal homogeneity |
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| CN101121240A CN101121240A (en) | 2008-02-13 |
| CN100500376C true CN100500376C (en) | 2009-06-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105397609B (en) * | 2015-11-03 | 2017-06-27 | 大连理工大学 | A kind of modification processing of optical element high precision plane |
| CN107243826B (en) * | 2017-07-06 | 2019-06-07 | 天津华海清科机电科技有限公司 | The method of wafer film thickness uniformity after adjustment CMP |
| CN108406575B (en) * | 2018-02-05 | 2020-04-14 | 上海华虹宏力半导体制造有限公司 | CMP polishing method |
| CN110270924B (en) * | 2019-07-31 | 2021-07-02 | 上海华虹宏力半导体制造有限公司 | CMP polishing method |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER NAME: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI |
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Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Hua Hong NEC Electronics Co.,Ltd. |
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Granted publication date: 20090617 |