CN100490129C - Metal-base circuit board and its manufacturing method - Google Patents

Metal-base circuit board and its manufacturing method Download PDF

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Publication number
CN100490129C
CN100490129C CNB200480009856XA CN200480009856A CN100490129C CN 100490129 C CN100490129 C CN 100490129C CN B200480009856X A CNB200480009856X A CN B200480009856XA CN 200480009856 A CN200480009856 A CN 200480009856A CN 100490129 C CN100490129 C CN 100490129C
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China
Prior art keywords
metal
circuit board
metallic plate
base circuit
semiconductor element
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CN1774800A (en
Inventor
米村直己
八島克憲
辻村好彦
石倉秀则
齊木高志
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Electric Chemical Industry Co ltd
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Electric Chemical Industry Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

A metal-base circuit board enables significant reduction of failures of a semiconductor device occurring in high-frequency operation of a hybrid integrated circuit and has an excellent heat dissipation capability. A metal base circuit board used for hybrid integrated circuits comprises a circuit provided over a metal sheet with insulating layers (A, B) interposed therebetween, an output semiconductor device mounted on the circuit, and a control semiconductor device used for controlling the output semiconductor device and mounted on the circuit. The metal-base circuit board is characterized in that a small-capacitance portion is buried under the circuit portion (pad portion) on which the control semiconductor device is mounted, and preferably the small-capacitance portion is made of a resin containing an inorganic filler and has a dielectric constant of 2 to 9.

Description

Metal-base circuit board and manufacture method thereof
Technical field
The present invention relates to be applicable to the metal-base circuit board and the manufacture method thereof of high-frequency work.Further, the present invention is specifically related to, and for example is applicable to metal-base circuit board and the manufacture method thereof that output is used semiconductor element and controlled the hybrid integrated circuit that constitutes with semiconductor element is installed simultaneously.
Background technology
The insulating barrier that is made of the epoxy resin of filling inorganic filler etc. is set, and the metal-base circuit board of laying circuit thereon is used as the circuit substrate that high febrifacient electronic component is installed because thermal diffusivity is good on metallic plate.
Fig. 1-1 has represented an example of the hybrid integrated circuit of semiconductor element mounted thereon on metal-base circuit board in the past.In its structure, output is equipped on by scolding tin with semiconductor element 2 (power semiconductor) and signal processing semiconductor element (following also claim to control to use semiconductor element) 1 on the circuit 3 of formation such as copper.In addition, described hybrid integrated circuit has between the semiconductor element by copper circuit, the perhaps structure that is electrically connected by closing line 5.When carrying output with semiconductor element 2 on circuit 3, aggravated heat radiation, output is risen with the temperature of semiconductor element, for misoperation does not take place, radiator 6 often is set.(referring to No. 3156798 communique of Japanese Patent Laid)
Have in the hybrid integrated circuit of described structure, each semiconductor element electrically with statically is connected with the Metal Substrate substrate, so if improve operating frequency (more than hundreds of kHz), then from signal (digital signal) distortion of control with semiconductor element 1, output semiconductor element 2 misoperations, meeting generation device itself can't be according to the problem of design work.As the countermeasure of foregoing problems,, also use aerial wiring (opening), but have a lot of problems in cost and the device assembling from (lift off) in order to eliminate the harmful effect of the electrostatic capacitance that metal substrate produces.
In addition, Fig. 1-the 2nd, the example of known other hybrid integrated circuits in the past.Compare with the structure of Fig. 1-1, attempted passing through to increase the thickness of insulating layer of control, reduce the harmful effect of the electrostatic capacitance of metal substrate generation with the lift-launch part of semiconductor element.But, when making such hybrid integrated circuit or being used for its metal-base circuit board, must make the different part of thickness of insulating layer partly, it is complicated that technology becomes, and has problems such as the hybrid integrated circuit that obtains expands upward.Also have to attempt metallic plate (also claiming the Metal Substrate substrate) that resin substrate etc. by will being provided with circuit in advance is laminated to metallic plate or is provided with insulating barrier and go up and realize that described structure substitutes the method (referring to No. 2608980 communique of Japanese Patent Laid) that adds thick dielectric layer, do not solve but stayed described problem.
About carrying the circuit substrate of hybrid integrated circuit, the method for main flow is that the Highgrade integration by semiconductor element makes the semiconductor element miniaturization, also carries resistor disc etc. except various semiconductor elements simultaneously on same substrate.Because each semiconductor element is different with the desired substrate properties of electronic component, so need have the circuit substrate of the characteristic of each part corresponding different semiconductor element of difference and electronic component.
Therefore, proposed combination that 6-No. 90071 communiques of Japanese patent laid-open are for example the disclosed circuit substrate of different insulative floor.But such compound inslation substrate owing to make its complex process, causes cost to rise, and make up different technical being not easy of insulating barrier in less area, and existence can't realize the problem of the significantly miniaturization of circuit substrate.
In addition, in the hybrid integrated circuit that uses metal-base circuit board, output is installed on the metal-base circuit board with semiconductor element together with semiconductor element and the control of the described output of control with the work of semiconductor element usually.To the desired characteristic of metal-base circuit board be, the former requires electrostatic capacitance big slightly, the characteristic of heat conductivity excellence, even the latter require pyroconductivity to make to sacrifice electrostatic capacitance slightly also will extremely low characteristic.
Yet known will control with semiconductor element is loaded into when making on the extremely low circuit of electrostatic capacitance as possible, and be insufficient with the auxiliary heat dissipation of semiconductor element from control in some cases, can't guarantee enough operating times.
The announcement of invention
The present invention finishes in view of the problem in the relevant prior art, and purpose provides the misoperation of significantly lowering the semiconductor element that takes place when the high-frequency work of hybrid integrated circuit, and the metal-base circuit board of the good economy of thermal diffusivity.
In addition, the purpose of this invention is to provide by making as possible on same circuit substrate and can change the circuit substrate characteristic partly, can carry the metal-base circuit board of a greater variety of semiconductor elements, electronic component, electric component etc.
Promptly, the inventor studies repeatedly in order to solve described problem, when the bottom that found that the circuit part that is at least and controls that semiconductor element directly is electrically connected is provided with the part of low-k, can obtain making heat fully to dispel the heat from the control semiconductor element, and noise characteristic excellence, enough can tackle the hybrid integrated circuit of high-frequency work, thereby finish the present invention.
Therefore, the present invention has following main points.
1-1. metal-base circuit boards, described metal-base circuit board be used for by the circuit that is provided with across insulating barrier (A, B) on the metallic plate, be installed on output on the described circuit with semiconductor element, be located at the described output of control on the described circuit with the control of semiconductor element metal-base circuit board with the hybrid integrated circuit of semiconductor element formation, it is characterized in that, bury low electrostatic capacitance part underground with the bottom of the circuit part (terminal pad (pad) part) of semiconductor element in the described control of lift-launch.
1-2. as above-mentioned 1-1 described metal-base circuit board, and its feature is that also low electrostatic capacitance part is made of the resin that contains inorganic filler, and dielectric constant is 2～9.
1-3. as above-mentioned 1-1 or 1-2 described metal-base circuit boards, and its feature is that also the thickness of low electrostatic capacitance part is 100～1000 μ m.
Each described metal-base circuit board in 1-4. as above-mentioned 1-1～1-3, its feature also is, carry control with the circuit part (terminal pad part) of semiconductor element across insulating barrier (B) be arranged at be embedded in metallic plate low electrostatic capacitance partly above.
The manufacture method of 1-5. metal-base circuit boards, it is characterized in that, possess following steps: fill the material that constitutes low electrostatic capacitance part in the space of the described depressed part of (1) metallic plate by on an interarea, having depressed part, until with the same apparent height of insulating barrier (A), make the step of low electrostatic capacitance body buck plate; (2) on the surface of the surface of the low electrostatic capacitance part of described low electrostatic capacitance body buck plate and insulating barrier (A), the insulating barrier (B) that is made of the resin that contains inorganic filler is set, makes the step that low electrostatic capacitance body is being adorned substrate; (3) on described low electrostatic capacitance body is being adorned the surface of insulating barrier (B) of substrate, metal forming is set, makes the step of metal bonded body; (4) comprise at least forming and carry control with the operation of the circuit part (terminal pad part) of semiconductor element, the step of processing the metal-foil circuit of described metal bonded body by the metal forming that is positioned at described low electrostatic capacitance part surface.
1-6. manufacture methods as above-mentioned 1-5 described metal-base circuit boards, its feature also is, makes the metallic plate that has depressed part on the described interarea by following steps:
(a) desired position is provided with the step of the insulating barrier (A) that the resin contain inorganic filler constitutes on an interarea of metallic plate;
(b) described insulating barrier (A) is formed the step of depressed part at metal sheet surface as the mask etching metallic plate.
2-1. metal-base circuit boards, described metal-base circuit board is the metal-base circuit board that circuit is set across insulating barrier on metallic plate, it is characterized in that, single face on metallic plate, pit part part around is to be set up under the non-opened state, on the metal covering at the gap of described pit part and described pit part place the insulating barrier that is made of same material is set all.
2-2. as above-mentioned 2-1 described metal-base circuit board, its feature also is, the depth capacity of pit part is 10～50% of a plate thickness, and vertically overlook its size of pit part and account for more than 50% of metallic plate area, and in the shape of pit part when vertically overlooking, the radius of curvature of corner is more than the 2.5mm.
2-3. as above-mentioned 2-1 or 2-2 described metal-base circuit boards, and its feature is that also insulating barrier is made of the resin that contains inorganic filler, and the young's modulus in compression after the resin combination curing is below the 15000MPa when 300K.
3-1. metal-base circuit boards, described metal-base circuit board is the metal-base circuit board that is used for by metallic plate, at the insulating barrier that is provided with on the described metallic plate, at the circuit that is provided with on the described insulating barrier, is installed on the hybrid integrated circuit that a plurality of semiconductor elements on the described circuit constitute, it is characterized in that, for the part of the non-semiconductor element mounting of described circuit, on the metallic plate of the bottom of this circuit part, the low-k part is set.
3-2. as above-mentioned 3-1 described metal-base circuit board, and its feature is that also described low-k part is provided with pit part by the surface at described metallic plate, fills the resin that contains inorganic filler to described pit part and obtains.
3-3. as above-mentioned 3-2 described metal-base circuit boards, and its feature is that also the sidewall of pit part has 35～65 ° inclination angle.
3-4. as above-mentioned 3-2 or 3-3 described metal-base circuit boards, its feature also is, inorganic filler is made of fused silica (silica), and described fused silica contains the particle of average grain diameter 6～30 μ m of particle, 18.0～80.0 volume % of average grain diameter 0.3～5.0 μ m of 3.5～45.0 volume %.
4-1. metal-base circuit boards, described metal-base circuit board is to be used for by metallic plate, the insulating barrier that on described metallic plate, is provided with, the circuit that on described insulating barrier, is provided with, be installed on the metal-base circuit board of the hybrid integrated circuit of a plurality of semiconductor elements formations on the described circuit, it is characterized in that, part for the non-semiconductor element mounting portion of described circuit, surface at the metallic plate of the bottom of this circuit part is provided with pit part, fill the resin that contains inorganic filler to this pit part, and pit part corner when vertically overlooking has the radius of curvature more than the 0.4mm.
4-2. as above-mentioned 4-1 described metal-base circuit board, its feature also is, inorganic filler is made of fused silica (silica), and described fused silica contains the particle of average grain diameter 6～30 μ m of particle, 18.0～80.0 volume % of average grain diameter 0.3～5.0 μ m of 3.5～45.0 volume %.
The manufacture method of 5-1. metal-base circuit boards, described method be used for by metallic plate, the insulating barrier that is provided with on the described metallic plate, the circuit that is provided with on the described insulating barrier, be installed on output on the described circuit with semiconductor element, be arranged on the manufacture method of the metal-base circuit board of the hybrid integrated circuit that the described as can be known output on the described multiple row constitutes with semiconductor element with the control of semiconductor element, it is characterized in that possessing following steps: (1) forms the step of depressed part on the interarea that insulating barrier one side is set of metallic plate; (2) on the metallic plate beyond described depressed part and the described depressed part, be coated with the step of insulating binder to same apparent height; (3) on the surface of described insulating binder, metal forming is set, makes described insulating binder solidify the step of making metal bonded body; (4) step of the metal-foil circuit of the described metal bonded body of processing.
5-2. metal-base circuit boards, it is characterized in that, described metal-base circuit board is that the manufacture method by above-mentioned 5-1 described metal-base circuit board obtains, and insulating binder is made of the resin that contains inorganic filler, and the pyroconductivity after solidifying is more than 1.3W/mK.
5-3. as above-mentioned 5-2 described metal-base circuit boards, its feature also is, the electrostatic capacitance of having filled circuit on the depressed part of insulating binder and the unit are between the metallic plate is at 50pF/cm 2Below, and beyond the described part circuit of part and the electrostatic capacitance of the unit are between the metallic plate at 50pF/cm 2More than, 160pF/cm 2Below.
The effect of invention
1. in the metal-base circuit board of the present invention, lift-launch is controlled and is buried low electrostatic capacitance part under the circuit that conducts with the circuit part of semiconductor element and high-frequency signal underground, from controlling with semiconductor element to the distortion attenuating of exporting the signal of using semiconductor element.Also have, carry and export with the described low electrostatic capacitance part that common poor radiation is not set under the circuit part of semiconductor element, have only the good insulating barrier of thermal diffusivity, therefore use this substrate can easily obtain in high-frequency work, also being difficult for the hybrid integrated circuit of misoperation.
2. metal-base circuit board of the present invention has aforesaid structure, so have the feature that can on same circuit substrate, change the characteristic of circuit substrate partly, can carry the semiconductor element of multiple class etc., for example go for having semiconductor element is used in output with semiconductor element and control hybrid integrated circuit simultaneously.Also have, because the location-appropriate ground that can in circuit substrate, expect configuration heat generation electronic component and radio-frequency generator, can solve originally in order to make it have insulating barrier that low stress can absorb stress and design thicklyer but cause the big prior art problems of thermal resistance phase strain simultaneously.Its result can also obtain to improve the effects such as heat-resisting cyclicity of the electronic components such as sheet resistor of lift-launch.
3. metal-base circuit board of the present invention is to be used to have comprise the metal-base circuit board of the big control of caloric value with the hybrid integrated circuit of a plurality of semiconductor elements of semiconductor element, by adopting described structure, promptly by the low-k part is being set under the direct-connected circuit with semiconductor element with control, guarantee the operating characteristic of control with semiconductor element, the heat that sends with semiconductor element in control passes through circuit simultaneously, insulating barrier then is directly to the metallic plate heat release.For example, the hybrid integrated circuits such as digital amplifier that high frequency filter, high frequency electric source, the audio frequency of the microstripline (マ Network ロ ス ト リ Star プ ラ イ Application) that the metal-base circuit board that goes for passing by can't be suitable for etc. used can be expanded new purposes on industry.
In addition, in the metal-base circuit board of the present invention, except aforesaid structure, low-k partly has specific shape, also use specific fused silica (silica) as inorganic filler, so have more excellent dielectric property, semiconductor element can be worked very reliably, thereby can improve the functional reliability of hybrid integrated circuit.
4. in addition, corner has the structure of the above radius of curvature (fillet) of 0.4mm when adopting pit part vertically to overlook, so can in low-k part, avoid concentrating of stress, improve the bonding force of low-k part and metallic plate and insulating barrier, further promote heat radiation.
5. can obtain efficiently having concurrently by manufacture method of the present invention because the little part that is suitable for carrying control usefulness semiconductor element of electrostatic capacitance, with because the big slightly metal-base circuit board that is suitable for carrying the part of output usefulness semiconductor element but heat conductivity is good of electrostatic capacitance, so the present invention can be provided for by metallic plate, the insulating barrier that on described metallic plate, is provided with, the circuit that on described insulating barrier, is provided with, be installed on output on the described circuit with semiconductor element and the described output of control with the metal-base circuit board of the control on the described circuit of being located at of semiconductor element with the hybrid integrated circuit of semiconductor element formation.
Metal-base circuit board of the present invention uses the insulating binder of pyroconductivity more than 1.3W/mK after solidifying, can guarantee excellent thermal diffusivity so have, semiconductor element is worked very reliably, thereby can improve the effect of the functional reliability of hybrid integrated circuit.
Also have, metal-base circuit board of the present invention has the electrostatic capacitance of unit are simultaneously at 50pF/cm 2Following part and 50pF/cm 2More than, 160pF/cm 2Following part so use semiconductor element by optionally carry control in the former, can further improve the reliability of hybrid integrated circuit.
The simple declaration of accompanying drawing
Fig. 1-1: use the schematic diagram of an example of the hybrid integrated circuit of known metal-base circuit board in the past.
Fig. 1-2: use the schematic diagram of the another one example of the hybrid integrated circuit of known metal-base circuit board in the past.
Fig. 1-3: the schematic diagram of an example that uses the hybrid integrated circuit of metal-base circuit board of the present invention.
Fig. 1-4: use other the schematic diagram of an example of hybrid integrated circuit of metal-base circuit board of the present invention.
Fig. 1-5: the schematic diagram of an example of the manufacture method of metal-base circuit board of the present invention.
Fig. 2-1: the schematic diagram of an example of metal-base circuit board of the present invention and manufacture method thereof.
Fig. 2-2: the key diagram of " vertically overlooking " among the present invention.
Fig. 2-3: the sectional view of comparative example 1 described metal-base circuit board.
Fig. 2-4: the sectional view of comparative example 2 described metal-base circuit boards.
Fig. 3-1: the schematic diagram of an example of the hybrid integrated circuit of the metal-base circuit board of use the present patent application.
Fig. 3-2: the schematic diagram of pit part of being located at the hybrid integrated circuit of Fig. 3-1.
Fig. 3-3: the plane graph of pit part of being located at the hybrid integrated circuit of Fig. 3-1.
Fig. 4-1: the key diagram of the manufacture method of the described metal-base circuit board of the present patent application.
Fig. 4-2: the schematic diagram of an example of the hybrid integrated circuit of the metal-base circuit board of use the present patent application.
The explanation of symbol
1 control is exported with semiconductor element 2 and is used semiconductor elements
3 circuit, 4 insulating barriers (A)
5 closing lines, 6 radiators
7 metallic plates, 8 insulating barriers (B) or resin substrate
9 low electrostatic capacitance part 10 insulating barriers (A)
11 depressed parts, 12 low electrostatic capacitance parts
13 insulating barriers (B), 14 metal formings
15 circuit (terminal pad part)
21 metallic plates, 22 pit parts
23 insulating barriers, 24 metal formings
25 etchant resists, 26 circuit (metal forming)
31 metallic plates, 32 insulating barriers
33 low-k parts, 34 closing lines
35 circuit, 36 radiators
37 outputs are controlled with semiconductor element 38 and are used semiconductor elements
41 metallic plates, 42 depressed parts (gap)
43 insulating binders (insulating barrier), 44 metal formings
45 circuit, 46 radiators
47 outputs are controlled with semiconductor element 48 and are used semiconductor elements
49 closing lines
The best mode that carries out an invention
Below, the present invention will be described to use accompanying drawing.
Fig. 1-3 is to use the key diagram of the hybrid integrated circuit of metal-base circuit board of the present invention.Metal-base circuit board of the present invention be used for by the circuit that is provided with across insulating barrier (A, B) on the metallic plate, be installed on output on the described circuit with semiconductor element, be located at the described output of control on the described circuit with the control of semiconductor element metal-base circuit board with the hybrid integrated circuit of semiconductor element formation, it is characterized in that, bury low electrostatic capacitance part underground with the bottom of the circuit part (terminal pad part) of semiconductor element in the described control of lift-launch.Promptly, metal-base circuit board of the present invention is because shown in Fig. 1-3, have and carrying control with the bottom of the circuit of the circuit part (also claiming the terminal pad part) of semiconductor element 1 and transmitting high-frequency signal and nearby bury the structure of hanging down electrostatic capacitance part 9 underground, the electrostatic capacitance of the circuit substrate at this place is descended, so have following feature, promptly, can lower from the distortion of control with the signal of semiconductor element 1, reduce, prevent to export and use semiconductor element, and then the misoperation of hybrid integrated circuit.
In addition, Fig. 1-4 is to use other the key diagram of hybrid integrated circuit of metal-base circuit board of the present invention.The structure that this hybrid integrated circuit has is that part required on metallic plate 7 forms depressed part, buries low electrostatic capacitance part 9 underground at this depressed part, across insulating barrier (A) 4 and insulating barrier (B) 8 circuit is set thereon.
In the present invention, the material of low electrostatic capacitance part 9 suitably selects the material of low-k to get final product according to the required electrostatic capacitance characteristic of hybrid integrated circuit, better be the resin of filling inorganic powder because with the adhesiveness excellence of metallic plate that joins and insulating barrier.In addition, the dielectric constant of the resin of described filling inorganic powder, according to the inventor's research, target of the present invention realized easily in 2～9 o'clock, so be preferred.It is good that described inorganic powder uses aluminium oxide, boron nitride, magnesium oxide, silicon dioxide, silicon nitride, aluminium nitride etc.It is good that resin uses epoxy resin, phenolic resins, polyimide resin, various engineering plastics.In addition, the material of dielectric constant 2～9 can obtain by kind and the addition of selecting described inorganic powder and resin.
About the shape of low electrostatic capacitance part 9, its size gets final product greatly with the circuit of semiconductor element and the circuit of transmitting high-frequency signal than carrying control, and its thickness must be according to the decisions such as material of operating frequency and low electrostatic capacitance part.That is, according to the inventor's research, its thickness is operating characteristic excellence when 1000 μ m are following more than the 100 μ m, can actually make practical hybrid integrated circuit.Do not have technical problem even described thickness surpasses under the situation of 1000 μ m yet, but can produce the problem that cost rises.
In addition, in metal-base circuit board of the present invention, about the circuit part that does not contain low electrostatic capacitance part, the bottom that semiconductor element is used in output, shown in Fig. 1-3, owing to require high-cooling property, so better be that insulating barrier (A) is thinner than the insulating barrier with low electrostatic capacitance part 9 (B), and constitute by the material of high thermal conductivity.
In addition, among the present invention, insulating barrier (A), insulating barrier (B) all are made of the resin of filling inorganic powder.It is good that inorganic powder uses aluminium oxide, boron nitride, magnesium oxide, silicon dioxide, silicon nitride, aluminium nitride etc.It is good that resin uses epoxy resin, phenolic resins, polyimide resin, various engineering plastics.It is different material, compositions that insulating barrier (A), insulating barrier (B) not necessarily need, and as mentioned above, both materials, composition are according to exporting with the mounting semiconductor element part and controlling with the partly balance selection of the two characteristic of mounting semiconductor element.
In addition, among the present invention, better be to be provided with across insulating barrier (B) above carrying the low electrostatic capacitance part of circuit part (also claiming the terminal pad part) in being embedded in metallic plate of control with semiconductor element.When adopting such structure, insulating barrier (B) covers whole of circuit side, so can obtain the metal-base circuit board of electric good reliability.And embodiment is described as described later, and the present invention does not need complicated technology, therefore has the feature that can obtain metal-base circuit board of the present invention economically.
Circuit 3 is made of any of the covering paper tinsel of copper, aluminium or copper and aluminium, is preferably the electroplating processes that suits and makes the soldering of the element class of closing line weldering, semiconductor element and radiator etc. become easy.The material that it is good that metallic plate 7 is heat conductivity gets final product, and aluminium, aluminium alloy, copper and copper alloy are high heat conducting, so therefrom be chosen as good.In addition, the thickness of metallic plate 7 is not particularly limited, and generally uses 0.5mm～3.0mm.
Fig. 2-1 (h) is the schematic diagram of an example of metal-base circuit board of the present invention, and Fig. 2-1 (a)～(g) has represented an example of its manufacture method.
At first, Fig. 2-1 (a) is the used metallic plate of metal-base circuit board, so long as the metallic plate of the good material of heat conductivity gets final product, general, aluminium, aluminium alloy, copper and copper alloy are high heat conducting, so therefrom be chosen as good.In addition, the thickness of metallic plate is not particularly limited, and generally uses 0.5mm～3.0mm.
In order to obtain metal-base circuit board of the present invention, shown in Fig. 2-1 (b), form pit part.This processing method can adopt any method, but in the present invention, described pit part must be that the single face on the metallic plate, pit part part around is to be provided with under the non-opened state.Because by adopting such structure, can play and suppress because the effect that the stress that causes because of expanding with heat and contract with cold of metal substrate makes insulating barrier peel off from the substrate-side surface portion.
In addition, in the present invention, shape and size about described pit part, research according to the inventor, as described later, the depth capacity of pit part is 10～50% of a plate thickness, and vertically overlooks its size of pit part and account for more than 50% of metallic plate area, and in the shape of pit part when vertically overlooking, the radius of curvature of corner is that 2.5mm is above for good.Here, described vertically overlooking is meant direction shown in Fig. 2-2.
The depth capacity of pit part is less than 10% o'clock with respect to plate thickness, effect of the present invention is not obvious sometimes, under 50% the situation of surpassing, be easy to generate the intensity decreases of metallic plate itself, the problem of easy deformation, vertically overlook under 50% the situation of its size of pit part less than the metallic plate area, the effect of invention can't be brought into play probably fully, sometimes control can't be finished on same circuit substrate with the circuit of circuit, and in the figure of pit part when vertically overlooking, become complicated in this corner high frequency characteristics and thermal diffusivity when having radius of curvature, be easy to generate the problems such as effect expected of to obtain less than the corner of 2.5mm.
Then, shown in Fig. 2-1 (d), in the space of described pit part with exist on the metal covering of described pit part the insulating barrier that same material constitutes is set.Have under the easy inotropic situation at the material that forms insulating barrier, shown in Fig. 2-1 (c), also can adopt earlier the space of pit part is filled with the material that forms insulating barrier, after shrink finishing, in the method for the insulating barrier of described surface of insulating layer and whole setting of metal sheet surface and the same material of described insulating barrier.
In the present invention, insulating barrier wishes that also it is a high thermal conductivity when having enough electrical insulating properties, and perhaps low-k also has highly with the bonding force of metal, generally is made of the resin that contains inorganic filler described later.Particularly, the resin that contains inorganic filler of the present invention by (1) epoxy resin be resin, (2) of main component have a polyether skeleton have the curing agent of primary amine groups and curable resin compound that (3) inorganic filler combines constitutes at the main chain end, use described hardening resin composition that the solidfied material of stress buffer, electrical insulating property, thermal diffusivity, thermal endurance, excellent moisture resistance can be provided.
Epoxy resin can use the epoxy resin of extensive uses such as bisphenol f type epoxy resin and bisphenol A type epoxy resin, if contain epoxy resin, the epoxy resin with naphthalene skeleton that being selected from more than the 10 quality % have the dicyclopentadiene skeleton in total epoxy, have the epoxy resin of biphenyl backbone and have more than one resin of the epoxy resin of novolaks skeleton, then the balance of stress buffer and moisture-proof further improves.Have in the representational epoxy resin of novolaks skeleton phenol novolak type epoxy resin and cresols phenolic resin varnish type epoxy resin are arranged, also can use the epoxy resin that has the dicyclopentadiene skeleton simultaneously, has naphthalene skeleton or biphenyl backbone and novolaks skeleton.Epoxy resin can also use the epoxy resin with above-mentioned skeleton separately.
In addition, with epoxy resin is main component, can add other heat-curing resin such as novolac resin, polyimide resin and high molecular weight resin such as phenoxy resin, acrylic rubber, acrylonitrile-butadiene rubber, if consider the balance of stress buffer, electrical insulating property, thermal endurance, moisture-proof, then the addition of above-mentioned high molecular weight resin total amount relative and epoxy resin is good below 30 quality %.
For the young's modulus in compression that makes the resin combination after the curing descends, curing agent uses the curing agent that has primary amine groups at the main chain end with polyether skeleton, can use together with other curing agent.If use together with the aromatic amine curing agent, then can obtain the balance of better stress buffer, electrical insulating property, moisture-proof.The aromatic amine curing agent can use diaminodiphenyl-methane, diamino-diphenyl sulphonyl, m-phenylenediamine etc.Also can add curing agent such as phenol novolac resin again uses together.
Inorganic filler uses electrical insulating property good and high thermoconductivity.Such inorganic filler can exemplify aluminium oxide, aluminium nitride, silicon nitride, boron nitride, silicon dioxide etc., can be used alone, but also also mix together.Wherein,, can fully fill because the shape of alumina particle is spherical, and can be easily, obtain economically, so be preferred.
Described hardening resin composition as under the situation of insulating barrier, by add silane couplers such as epoxy silane, amino silane in described resin combination, can further be improved the adhesiveness with conductor circuit.In addition, consider decisions such as stress buffer, thermal diffusivity, insulating reliability, productivity as its thickness under the situation of insulating barrier, usually about 50～150 μ m.
In the present invention, the described resin that contains inorganic filler, the young's modulus in compression after the curing are good below 15000MPa when 300K.If surpass 15000MPa, then stress buffer or deficiency.On the other hand, there is no need to set for lower limit, but still might be out of shape when applying huge external force, insulating reliability descends, and is good more than 100MPa when 300K.
Then, by whole configuration metal forming at the insulating barrier of the structure shown in Fig. 2-1 (d), heating is also integrated, obtains the structure shown in Fig. 2-1 (e).Here the metal forming of Shi Yonging is owing to will be formed to circuit, so can use the metal forming of excellent electric conductivity, for example in copper, aluminium, nickel, iron, tin, silver, the titanium any, contain the alloy of 2 kinds of the above metals or use covering paper tinsel of described metal or alloy etc.The manufacture method of described paper tinsel can be made of electrolysis or rolling process, on paper tinsel, can carry out metal platings such as Ni plating, Ni-Au plating, scolding tin plating, from with the fusible aspect of dielectric adhesive layer, it is better that roughening treatment is carried out in advance by etching and plating etc. in the surface that contacts a side with the dielectric adhesive layer of conductor circuit.
On the appointed positions of the described metal forming of the structure of Fig. 2-1 (e), be coated with etchant resist (referring to Fig. 2-1 (f)), use the etching solution of appointment to carry out etching metal forming, by described metal-foil circuit (referring to Fig. 2-1 (g)), by peeling off etchant resist, can obtain the metal-base circuit board of the present invention shown in Fig. 2-1 (h) then.
Metal-base circuit board of the present invention utilizes described structural feature, when for example described circuit forms, on the circuit of the darker part in gap, make and carry the part of control, on the circuit of the more shallow part of the gap degree of depth, make and carry the part of output with semiconductor element with semiconductor element.Thus, the present invention have can on same circuit substrate, form have simultaneously control with semiconductor element and output with the feature of the hybrid integrated circuit of semiconductor element, be suitable for the circuit substrate of using as the hybrid integrated circuit of various uses.
Fig. 3-1 is to use an example of the hybrid integrated circuit of metal-base circuit board of the present invention.In this hybrid integrated circuit, carried a plurality of semiconductor elements on the described circuit 35 of the metal-base circuit board that is made of metallic plate 31, insulating barrier 32 and circuit 35, i.e. output is used semiconductor element 38 with semiconductor element 37 with controlling.Output, is connected with circuit 35 across radiator 36 in order to help heat radiation usually with semiconductor element 37, and the situation of not using radiator 36 is also arranged.In addition, control is not followed a large amount of heatings usually with semiconductor element 38, so be not connected with circuit 35 across radiator, can certainly connect across radiator.And in Fig. 3-1, the signal of using semiconductor element 38 from control is by circuit 35 and closing line and output semiconductor element 37 conductings.
The present invention with at least with the circuit that directly is electrically connected with semiconductor element 38 of control under low-k part 33 is set is feature, by the feature that adopts such structure the present invention to have be, the metal-base circuit board that goes for passing by can't be suitable for, use the auxiliary heat dissipation of semiconductor element insufficient from control, can't guarantee the hybrid integrated circuit of enough operating times.
Among the present invention, can replace metallic plate 31, change its part into the material lower than this metallic plate dielectric constant, this material is not particularly limited.The manufacture method of known metal-base circuit board is not in the past done a large amount of technologic changes and just can obtain, for example pit part is set, fill the substrate of the resin that contains inorganic filler at this pit part on metallic plate 31 surfaces.And, because select to increase the fusible material of insulating barrier 2 and metallic plate 31 easily, so be particularly preferred.
In addition, about described pit part, according to the inventor's research, shown in Fig. 3-2, it is good that its sidewall and bottom surface angulation: θ have 35～65 ° inclination angle.Under less than 35 ° situation, it is big that the area of sidewall sections becomes, enough big in order to guarantee that electrostatic capacitance must be added to pit part, under the situation of inclination above 65 °, when there is angle the sidewall and the bottom surface of pit part, this angle part leaves space, the easy variation of the electrical characteristic of the metal-base circuit board that obtains under the both of these case easily.In addition, bottom shape about pit part, there is no need special qualification, but make metallic plate form the method for pit part from conduct, can be suitable for mechanical means such as punch process, cut or help the angle of the manufacture method of production, be plane for good by chemical methodes such as chemical reagent etching etc.
In addition, the shape of pit part, the size of pit portion is compared bigger getting final product with the circuit that signals such as carrying the circuit of control with semiconductor element, high-frequency electric wave when the hybrid integrated circuit transmits when overlooking metal-base circuit board.Thickness (degree of depth) is according to the material of the insulating binder that forms insulating barrier and difference, but gets final product at 50～800 μ m usually.In addition, each pit part of the degree of depth of pit part can be different, but can process simultaneously when adopting all same degree of depth, so be preferred.
In addition, among the present invention, about the resin that contains inorganic filler of filling to described pit part, so long as low-k can, be preferably high thermal conductivity.
Described inorganic filler can exemplify aluminium oxide, silica, aluminium nitride, boron nitride etc., and wherein aluminium oxide, silica, boron nitride can obtain the good low-k part of balance of low-k and high thermoconductivity, so be preferred.The shape of the constituent particle of inorganic filler is not particularly limited, but can improve mobile spherical for good, in addition, if be suitable for inorganic filler then the dielectric constant of low-k part further descends, so better with hole.Especially, according to the inventor's result of study, fused silica (silica) fillibility that the particle that the particle of average grain diameter 0.3～5.0 μ m accounts for 3.5～45.0 volume %, average grain diameter 6～30 μ m accounts for 18.0～80.0 volume % is good.Therefore, can obtain the good low-k part of balance of low-k and high thermoconductivity stably, practically, so be better.
About described resin, can use heat-curing resins such as epoxy resin, novolac resin, polyimide resin, various engineering plastics, perhaps thermoplastic resins such as polyethylene, polypropylene, vinylidene chloride, PETG, ABS resin, AS resin also have acrylic resin, silicone resin, polyurethane resin etc.Wherein, be preferably and use the resin identical with insulating barrier, because good with the adhesiveness of metallic plate, it is preferred using epoxy resin in addition.
Among the present invention, metallic plate so long as the metallic plate of the good material of heat conductivity can, aluminium, aluminium alloy, copper and copper alloy are high thermal conductivities, so be preferred.In addition, the thickness of metallic plate is not particularly limited, but generally uses 0.3mm～4.0mm.
Among the present invention, the composition of insulating barrier, characteristic are very important.Insulating barrier is made of the resin that contains inorganic filler.Described inorganic filler can be used the inorganic compound of electrical insulating properties such as aluminium oxide, boron nitride, magnesium oxide, barium sulfate, zinc oxide, silicon dioxide (silica), silicon nitride, aluminium nitride, aluminium oxide, boron nitride, aluminium nitride, silicon dioxide economy and obtain easily are so be preferred.Wherein, because the shape of aluminium oxide and aluminum nitride particle is spherical, can fully fills, and can easily obtain the insulating barrier of high heat conductivity, so be preferred.
Resin can use heat-curing resins such as epoxy resin, novolac resin, polyimide resin, various engineering plastics, perhaps thermoplastic resins such as polyethylene, polypropylene, vinylidene chloride, PETG, ABS resin, AS resin, also have acrylic resin, silicone resin, polyurethane resin, fluorine resin etc., especially, because good with the adhesiveness of metallic plate, epoxy resin is preferred.
Promptly, among the present invention, combination about inorganic filler and resin, contain in aluminium oxide, boron nitride, aluminium nitride, the silicon dioxide more than one epoxy resin and metallic plate and form the bonding force height of the metal forming of circuit, and can easily obtain high insulating barrier of pyroconductivity and the little insulating barrier of electrostatic capacitance after solidifying, so be preferred combination.In addition, also be same for the resin that contains inorganic filler that constitutes described low-k part.
The resin that contains inorganic filler of its uncured state (the following insulating binder that also is called for short) generally can use rolling method, gravure rubbing method, subsides to be coated with method, silk screen print method etc. to the coating process of specified portions.In addition, insulating binder can adopt single or multiple lift.Under the situation of multilayer, because the elongated cost of technology also rises, still anti-insulation breakdown characteristic can improve, and the precision of the thickness of insulating barrier is improved.
In the present invention, circuit and be used to form the material of the metal forming of circuit can use in copper, aluminium, nickel, iron, tin, silver, the titanium any, contains the alloy of 2 kinds of the above metals or use the covering paper tinsel etc. of described metal or alloy.In addition, the manufacture method of described paper tinsel can be made of electrolysis or rolling process, can carry out metal platings such as Ni plating, Ni-Au plating, scolding tin plating on paper tinsel.From with the fusible aspect of insulating binder, it is better that roughening treatment is carried out in advance by etching and plating etc. in the surface that contacts a side with the dielectric adhesive layer of conductor circuit.
Have in the metal-base circuit board of the present invention across the part of insulating barrier and metallic plate adjacency with across insulating barrier and low-k part part with the metallic plate adjacency.When using metal-base circuit board of the present invention to make hybrid integrated circuit, by on the latter's circuit, carrying controls such as resistor disc and capacitor electronic component, can lower from the distortion of control with the signal of semiconductor element, in addition, by on the former circuit, carry output with semiconductor element and control with semiconductor element etc., can prevent the excessive intensification and the consequent misoperation of semiconductor element.Its result can obtain the effect that hybrid integrated circuit is guaranteed the work of high reliability as a whole.
In the embodiments of the present invention, about pit part, shown in Fig. 3-3, corner has the above radius of curvature (fillet) of 0.4mm when vertically overlooking.About the shape of pit part, general, the heat conductivity of low-k part is lower than metallic plate, so partly go up the shape formation of the circuit of wiring according to low-k.General square and the rectangles of adopting of its shape, perhaps rectangle also can adopt polygon and round shapes such as circle, ellipse such as triangle, pentagon, hexagon sometimes more.
The inventor has carried out experimental study with regard to the shape of this pit part, when finding that corner has the above radius of curvature of 0.4mm, the corner part of pit does not have residual clearance, can stably obtain having the metal-base circuit board of specified characteristic, thereby finish the present invention.In the present invention, no matter be characterised in that the shape that pit part is overlooked is polygon or circle, the radius of curvature of the corner that it is minimum (fillet) has the above size of 0.4mm.
In addition, about the shape of pit part, the size of sunk part is compared bigger getting final product with the circuit that signals such as carrying the circuit of control with semiconductor element, high-frequency electric wave transmits when overlooking metal-base circuit board.About thickness (degree of depth), according to the material of the insulating binder that forms insulating barrier and difference, but get final product at 50～800 μ m usually.
In addition, concavo-convex about pit part, there is no need its special qualification, but make metallic plate form the method for pit part from conduct, can be suitable for mechanical means such as punch process, cut or help the angle of the manufacture method of production, be plane for good by chemical methodes such as chemical reagent etching etc.
Fig. 4-the 1st, the key diagram of the manufacture method of metal-base circuit board of the present invention.At first, form depressed part (referring to Fig. 4-1 (1)) in the metal sheet surface desired position.Here, the method that forms depressed part can exemplify punch process, cut or by known method in the past such as chemical reagent etching.The metallic plate that uses so long as the metallic plate of the good material of heat conductivity can, aluminium, aluminium alloy, copper and copper alloy are high thermal conductivities, so be preferred.In addition, the thickness of metallic plate is not particularly limited, but generally uses 0.3mm～4.0mm.
The shape of the depressed part of metallic plate, the size of sunk part is compared bigger getting final product with the circuit that signals such as carrying the circuit of control with semiconductor element, high-frequency electric wave when the hybrid integrated circuit transmits when overlooking metal-base circuit board.Thickness (degree of depth) is according to the material of the insulating binder that forms insulating barrier and difference, but gets final product at 50～500 μ m usually.In addition, each depressed part of the degree of depth of depressed part can be different, but can process simultaneously when adopting all same degree of depth, so be preferred.
Then, on the metallic plate beyond described depressed part and the depressed part, be coated with insulating binder to same apparent height (referring to Fig. 4-1 (2)).The coating process of insulating binder generally can use rolling method, gravure rubbing method, subsides to be coated with method, silk screen print method etc.In addition, insulating binder can adopt single or multiple lift.Under the situation of multilayer, because the elongated cost of technology also rises, still having anti-insulation breakdown characteristic can improve, the feature that the thickness and precision of while insulating barrier is improved.
Then, metal forming is set on the surface of described insulating binder, make metal bonded body (referring to Fig. 4-1 (3)) after, process the metal-foil circuit (referring to Fig. 4-1 (4)) of described metal bonded body.The metal forming of using among the present invention, and the material of the circuit that is formed by described metal forming can be used in copper, aluminium, nickel, iron, tin, silver, the titanium any, contain the alloy of 2 kinds of the above metals or use covering paper tinsel of described metal or alloy etc.In addition, the manufacture method of described metal forming can be made of electrolysis or rolling process.On metal forming, can carry out metal platings such as Ni plating, Ni-Au plating, scolding tin plating, from with the fusible aspect of insulating binder, to carry out roughening treatment in abutting connection with the surface of a side in advance by etching and plating etc. better with the dielectric adhesive layer of metal forming (circuit).
Fig. 4-2 is to use the schematic diagram of an example of the hybrid integrated circuit of the metal-base circuit board that the manufacture method by metal-base circuit board of the present invention obtains.Shown in Fig. 4-2, in metal-base circuit board of the present invention, be provided with at least in the thicker part in insulating barrier part (being equivalent to be located at the depressed part on the metallic plate) and go up set circuit and go up set these 2 kinds of circuit of circuit in the local thin part of insulating barrier (being equivalent to the depressed part part in addition on the metallic plate).By on the former circuit, carrying controls such as resistor disc and capacitor electronic component, can reduce the distortion of example control with the signal of semiconductor element, in addition, by on the latter's circuit, carry output with semiconductor element and control with semiconductor element etc., can prevent the excessive intensification and the consequent misoperation of semiconductor element.Its result can obtain the effect that hybrid integrated circuit is guaranteed the work of high reliability as a whole.
In the present invention, the composition of insulating binder, characteristic are very important.Among the present invention, insulating binder is made of the resin that contains inorganic filler.Described inorganic filler can be used the inorganic compound of electrical insulating properties such as aluminium oxide, boron nitride, magnesium oxide, barium sulfate, zinc oxide, silicon dioxide (silica), silicon nitride, aluminium nitride.Resin can preferably use heat-curing resins such as epoxy resin, novolac resin, polyimide resin, various engineering plastics, perhaps thermoplastic resins such as polyethylene, polypropylene, vinylidene chloride, poly terephthalic acid ethanedioic acid ester, ABS resin, AS resin also have acrylic resin, silicone resin, polyurethane resin etc.
Among the present invention, combination about inorganic filler and resin, contain more than one resin and the bonding force height of metallic plate and metal forming in aluminium oxide, boron nitride, aluminium nitride, the silicon dioxide, and can easily obtain high insulating barrier of pyroconductivity and the little insulating barrier of electrostatic capacitance after solidifying, so be preferred.
Among the present invention, the pyroconductivity after insulating binder solidifies is good more than 1.3W/mK.When use has the insulating binder of described high thermoconductivity, can obtain the higher hybrid integrated circuit of reliability, can be as for example vehicle-mounted hybrid integrated circuit of automobile, railway etc.
In addition, among the present invention, the electrostatic capacitance of having filled circuit on the depressed part of insulating binder and the unit are between the metallic plate is at 50pF/cm 2Below, and the electrostatic capacitance of the circuit of the part beyond the described depressed part and the unit are between the metallic plate is at 50pF/cm 2More than, 160pF/cm 2Below be good.By adopting described structure, effect of the present invention becomes more remarkable, can be as for example hybrid integrated circuit of the vehicle-mounted practicality of automobile, railway etc.
Below, based on embodiment, metal-base circuit board of the present invention and manufacture method thereof are elaborated.
Embodiment 1-1
Shown in Fig. 1-5 (1), desired position on the aluminium sheet of 50mm * 50mm * (thickness mm) is provided with the insulating barrier (A) 10 of the thickness 20 μ m that are made of the epoxy resin that contains 60 volume % aluminium oxide, this insulating barrier (A) as mask etching metallic plate 7, is formed the depressed part 11 (Fig. 1-5 (2)) of dark 300 μ m at metal sheet surface.
Fill at the depressed part 11 of metallic plate 7 epoxy resin that contains 60 volume % silicon dioxide until and insulating barrier (A) 10 same apparent heights, form low electrostatic capacitance part 12 (Fig. 1-5 (3)).
Then, form the insulating barrier (B) 13 (Fig. 1-5 (4)) that the epoxy resin by containing 60 volume % aluminium oxide of thick 30 μ m constitutes, laminated metal foil 14 forms Metal Substrate substrates (Fig. 1-5 (5)) again.
Use described Metal Substrate substrate, can be used to comprise output semiconductor element and the described output of the control metal-base circuit board of the control of semiconductor element by being positioned at the metal forming formation lift-launch control of hanging down the electrostatic capacitance part circuit (terminal pad part) and other required circuit 3 of semiconductor element, making with the hybrid integrated circuit of semiconductor element.
Use described metal-base circuit board, trial-production is carried digital signal IC as the control semiconductor element on this circuit, carry MOS-FET as the digital amplifier (hybrid integrated circuit) of output, allow its operating frequency work, confirm its operate as normal with 600kHz with semiconductor element.
Embodiment 1-2
In embodiment 1-1, be produced on the metallic plate that has depressed part on the interarea with etching method in advance, by being set at metal sheet surface, insulating barrier (A) prepares the metallic plate of structure shown in Fig. 1-5 (2), then with the program making metal-base circuit board same with embodiment 1-1, make digital amplifier again and make its work, confirm to continue operate as normal more than 1 hour with the operating frequency of 600kHz.
Comparative example 1-1
Contain the epoxy resin of 60 volume % aluminium oxide on aluminium sheet with the thickness coating of 50 μ m, the lamination Copper Foil is made the Metal Substrate substrate thereon.Use described Metal Substrate substrate,, make digital amplifier again, carry out work and confirm, misoperation takes place by obtaining metal-base circuit board with the same operation of embodiment 1-1.Operating frequency and embodiment 1-1 same 600kHz that adopts.
Comparative example 1-2
Contain the epoxy resin of 60 volume % silicon dioxide on aluminium sheet with the thickness coating of 300 μ m, the lamination Copper Foil is made the Metal Substrate substrate thereon.Use described Metal Substrate substrate,, make digital amplifier again, carry out work and confirm by obtaining metal-base circuit board with the same operation of embodiment 1-1.Its result makes its operating frequency work with 600kHz, and operate as normal during beginning is because power transistor heating work quit work after 5 seconds.
Embodiment 2-1～2-4, comparative example 2-1～2-4
Desired position coated heat curing type China ink against corrosion (resistink) on the aluminium sheet of 50mm * 50mm * 2mm, form the pit part of all size shown in table 2-1, the degree of depth by alkaline etching after, remove China ink against corrosion.
Then, with 100 mass parts Japanese ユ ニ カ-Co., Ltd.'s system), 500 mass parts are as the aluminium oxide (AS-50: Showa Denko K. K's system) mix with omnipotent mixing and blending machine of the average grain diameter 5 μ m of inorganic filler as the bisphenol f type epoxy resin (エ ピ コ-ト 807: epoxide equivalent=173, oiling シ ェ Le エ Port キ シ Co., Ltd. system) of epoxy resin, 5 mass parts silane coupler γ-glycidoxy propyl group methyldiethoxysilane (AZ-6165:.
To in said mixture, add 25 mass parts polyoxypropylene amine as curing agent (ジ ェ Off ァ one ミ Application T-403: テ キ サ コ ケ ミ カ Le corporate system), 20 mass parts polyoxypropylene amine (ジ ェ Off ァ one ミ Application D2000: テ キ サ コ ケ ミ カ Le corporate system) and the filling insulating material of mixing the thick 20 μ m that the resin that obtains constitutes to described pit part, the thickness with 30 μ m forms insulating barrier simultaneously.The lamination Copper Foil obtains the Metal Substrate substrate again.Then, the circuit to described Metal Substrate substrate has the terminal pad part that can carry resistor disc by using ferric chloride solution etching Copper Foil to form obtains metal-base circuit board.
Described metal-base circuit board is carried out thermal cycling test described later (heat cycle test), and its result is shown in table 2-1.
＜thermal cycling test method 〉
The resistor disc of soldering size 2.0mm * 1.25mm between terminal pad, with-40 ℃ 7 minutes～+ 125 ℃ 7 minutes be after a circulation is tested, partly to have or not the crack with microscopic examination scolding tin.In addition, the crack occurrence rate of scolding tin part is reached period more than 50% as heat-resisting circulative index.
Table 2-1
Figure C200480009856D00211
Embodiment 3-1
Desired position coated heat curing type China ink against corrosion on the aluminium sheet of 150mm * 150mm * 1.5mm, form the pit part of 43 ° of dark 300 μ m, sidewall slope by etching after, remove China ink against corrosion.
Then, to the bisphenol A-type liquid epoxy resin (the japan epoxy resin corporate system, EP828) by contain the aluminium oxide that 45 volume % add average grain diameter 2 μ m (the Japanese light metal corporate system, LS-20), mixed insulating binder A.
In addition, to bisphenol A-type liquid epoxy resin (japan epoxy resin corporate system, EP828) by containing fusion spherical silicon dioxide (Denki Kagaku Kogyo kabushiki's system that 37 volume % and 40 volume % add average grain diameter 1.7 μ m respectively respectively, FB-1SDX) and fusion spherical silicon dioxide (Denki Kagaku Kogyo kabushiki's system of average grain diameter 11.3, FB-550), the mixed insulating binder B that gets.
After being applied to insulating binder B on the aluminium sheet with described pit part, being coated with described insulating binder A and making that partial insulating layer thickness reaches 50 μ m beyond the pit part.Then, copper foil layer is pressed onto on the described insulating binder A and obtains the Metal Substrate substrate.
To described Metal Substrate substrate by with etchant resist after desired location is made the mask etching Copper Foil, remove the etchant resist cleaning-drying, form circuit, make metal-base circuit board.When circuit forms, be formed on the position with described pit part and carry the resistor disc that directly is electrically connected with semiconductor element with control and the circuit of capacitor, in addition, be formed on lift-launch output semiconductor element and the control circuit of semiconductor element on the position with described pit part.
The metal-base circuit board that obtains with aforesaid operations is measured the electrostatic capacitance of breakdown voltage and unit are.The mensuration of breakdown voltage is measured based on JIS C2110.In addition, when measuring the electrostatic capacitance of described unit are, the electrostatic capacitance when deciding frequency 1MHz with the LCR instrumentation is measured and this area of measuring the insulating binder joining part of circuit partly simultaneously, and described electrostatic capacitance obtains divided by described circuit area.The main manufacturing conditions of metal-base circuit board and measurement result are shown in table 3-1.
Table 3-1
Figure C200480009856D00221
Then, use described metal-base circuit board to make hybrid integrated circuit shown in Fig. 3-1.This hybrid integrated circuit carries MOS-FET as the digital amplifier of output with semiconductor element for carrying digital signal IC as the control semiconductor element.Allow this hybrid integrated circuit with the operating frequency work of 1.2MHz, confirm its operate as normal.
Comparative example 3-1
In embodiment 3-1, except use does not have pit, smooth aluminium sheet, beyond the thickness coating insulating binder A with 50 μ m on this aluminium sheet, with the program making Metal Substrate substrate identical with embodiment 3-1, and metal-base circuit board.The measurement result of this metal-base circuit board is shown in table 3-1 in the lump.In addition, make the digital amplifier identical, carry out work and confirm, the generation misoperation with embodiment 3-1.
Embodiment 4-1
Desired position coated heat curing type China ink against corrosion on the aluminium sheet of 150mm * 150mm * 1.5mm, by etching form when overlooking be the pit part of fillet (R) for the above dark 300 μ m of 0.6R of rectangle and corner after, remove China ink against corrosion.
Then, to the bisphenol A-type liquid epoxy resin (the japan epoxy resin corporate system, EP828) by contain the aluminium oxide that 45 volume % add average grain diameter 2 μ m (the Japanese light metal corporate system, LS-20), mixed insulating binder A.
In addition, to bisphenol A-type liquid epoxy resin (japan epoxy resin corporate system, EP828) by containing fusion spherical silicon dioxide (Denki Kagaku Kogyo kabushiki's system that 37 volume % and 40 volume % add average grain diameter 1.7 μ m respectively, FB-1SDX) and fusion spherical silicon dioxide (Denki Kagaku Kogyo kabushiki's system of average grain diameter 11.3, FB-550), the mixed insulating binder B that gets.
After being applied to insulating binder B on the aluminium sheet with described pit part, being coated with described insulating binder A and making that partial insulating layer thickness reaches 50 μ m beyond the pit part.Then, copper foil layer is pressed onto on the described insulating binder A and obtains the Metal Substrate substrate.
To described Metal Substrate substrate by with etchant resist after desired location is made the mask etching Copper Foil, remove the etchant resist cleaning-drying, form circuit, make metal-base circuit board.When circuit forms, be formed on the position with described pit part and carry the resistor disc that directly is electrically connected with semiconductor element with control and the circuit of capacitor, in addition, be formed on lift-launch output semiconductor element and the control circuit of semiconductor element on the position with described pit part.The metal-base circuit board that obtains with aforesaid operations is measured the electrostatic capacitance of breakdown voltage and unit are.The mensuration of breakdown voltage is measured based on JIS C2110.In addition, when measuring the electrostatic capacitance of described unit are, the electrostatic capacitance when deciding frequency 1MHz with the LCR instrumentation is measured and this area of measuring the insulating binder joining part of circuit partly simultaneously, and described electrostatic capacitance obtains divided by described circuit area.Obtain metal-base circuit board in the present embodiment and show the characteristic same with embodiment 3-1.
In addition, use described metal-base circuit board to make hybrid integrated circuit shown in Fig. 3-1.This hybrid integrated circuit carries MOS-FET as the digital amplifier of output with semiconductor element for carrying digital signal IC as the control semiconductor element.Allow this hybrid integrated circuit with the operating frequency work of 1.2MHz, confirm its operate as normal.
Embodiment 5-1
Desired position coated heat curing type China ink against corrosion on the aluminium sheet of 150mm * 150mm * 1.5mm, form the depressed part of dark 200 μ m by etching after, remove China ink against corrosion.
Then, to the bisphenol A-type liquid epoxy resin (the japan epoxy resin corporate system, EP828) by contain the aluminium oxide that 45 volume % add average grain diameter 2 μ m (the Japanese light metal corporate system, LS-20), mixed insulating binder.
By insulating binder being applied on the aluminium sheet with described depressed part, fill insulating adhesive material to described depressed part, make described depressed part simultaneously beyond partial insulating layer thickness reach 60 μ m.Then, metal foil layer is pressed onto obtains the Metal Substrate substrate on the described insulating binder.At this moment the insulating binder that uses is solidified into the shape of diameter 10mm, thick 2mm, makes the test piece that pyroconductivity is measured usefulness, measurement result is 1.5W/mK.
In addition, having filled the circuit on the depressed part of insulating binder and the electrostatic capacitance of the unit are between the metallic plate is 35pF/cm 2, the circuit on the part beyond the described depressed part and the electrostatic capacitance of the unit are between the metallic plate are 120pF/cm 2When measuring the electrostatic capacitance of described unit are, the electrostatic capacitance when deciding frequency 1MHz with the LCR instrumentation is measured and this area of measuring the insulating binder joining part of circuit partly simultaneously, and described electrostatic capacitance obtains divided by described circuit area.
Then, form in the part of the described depressed part of described Metal Substrate substrate and to contain control output with the control of semiconductor element hybrid integrated circuit with semiconductor element, in addition, part beyond described depressed part forms output with semiconductor element and the circuit of control with semiconductor element, obtains metal-base circuit board.
Then, use described metal-base circuit board to make hybrid integrated circuit shown in Fig. 4-2.This hybrid integrated circuit carries MOS-FET as the digital amplifier of output with semiconductor element for carrying digital signal IC as the control semiconductor element.Allow this hybrid integrated circuit with the operating frequency work of 600kHz, confirm its operate as normal.
Embodiment 5-2
In embodiment 5-1, except the epoxy resin of the alumina packing that will contain 60 volume % as the insulating binder, with curing test piece, the Metal Substrate substrate of the program making insulating binder identical, and metal-base circuit board with embodiment 3-1.At this moment, the pyroconductivity of insulating binder is 2.8W/mK, and the circuit on the depressed part of filling insulating binder and the electrostatic capacitance of the unit are between the metallic plate are 45pF/cm 2, the circuit on the part beyond the described depressed part and the electrostatic capacitance of the unit are between the metallic plate are 140pF/cm 2
Make the digital amplifier identical and make its work, confirm with the lasting operate as normal of the operating frequency of 600kHz more than 1 hour with embodiment 5-1.
Comparative example 5-1
In embodiment 5-1, not have to cave in except using, smooth aluminium sheet, on this aluminium sheet with the thickness of 60 μ m coating insulating binder beyond, with curing test piece, the Metal Substrate substrate of the program making insulating binder identical, and metal-base circuit board with embodiment 5-1.The pyroconductivity of the firming body of insulating binder is 1.5W/mK, and the electrostatic capacitance of the unit are between circuit and the metallic plate is 123pF/cm 2
In addition, similarly make digital amplifier, carry out work and confirm with embodiment 5-1.Its result makes its operating frequency work with 600kHz, and misoperation takes place.
Comparative example 5-2
In embodiment 5-1, not have to cave in except using, smooth aluminium sheet, on this aluminium sheet with the thickness of 260 μ m coating insulating binder beyond, with curing test piece, the Metal Substrate substrate of the program making insulating binder identical, and metal-base circuit board with embodiment 5-1.The pyroconductivity of the firming body of insulating binder is 1.5W/mK, and the electrostatic capacitance of the unit are between circuit and the metallic plate is 32pF/cm 2
In addition, similarly make digital amplifier, carry out work and confirm with embodiment 5-1.Its result makes its operating frequency work with 600kHz, and operate as normal during beginning is because power transistor heating work quit work after 5 seconds.
The possibility of utilizing on the industry
The feature of the manufacture method of metal-base circuit board of the present invention is that the metal-base circuit board with described feature can be provided stably, reliably.
The feature of metal-base circuit board of the present invention is the characteristic that changes partly circuit substrate on same circuit substrate, can carry the semiconductor element of multiple types etc., such as go for having simultaneously output with semiconductor element and control with the hydrid integrated circuit of semiconductor element etc., and owing to can in circuit substrate, suitably dispose heat generation electronic component and radio-frequency generator in the desired position, therefore, has the feature that can obtain to improve the heat-resisting cyclicity texts that carries the electronic components such as resistor disc, so can be used as the circuit substrate that various hydrid integrated circuits are used.
Metal-base circuit board of the present invention can provide to have concurrently and be suitable for carrying control output because electrostatic capacitance is little with the circuit part of the electronic components such as the resistor disc of semiconductor element and capacitor, with be suitable for carrying the output that needs heat radiation uses semiconductor element with semiconductor element and control circuit part but heat conductivity is good because electrostatic capacitance is slightly big, the hydrid integrated circuit that functional reliability is high is very useful on the industry.
Adopt manufacture method of the present invention, be suitable for carrying control output with the circuit part of the electronic components such as the resistor disc of semiconductor element and capacitor owing to obtaining efficiently to have concurrently because electrostatic capacitance is little, with be suitable for carrying the circuit part of semiconductor element is used in the output that needs heat radiation with semiconductor element and control metal-base circuit board but heat conductivity is good because electrostatic capacitance is slightly big, therefore can be provided for economically the metal-base circuit board of hydrid integrated circuit, be very useful on the industry.
Specification all the elements of the patent documentation on the following basis that requires priority as the present invention are quoted in the announcement of specification of the present invention: Japan Patent is special is willing to (on April 15th, 2003 filed an application to the Japan special permission Room) 2003-No. 110377, No. 2003-275979, the special hope of Japan Patent (on July 17th, 2003 filed an application to the Japan special permission Room), No. 2003-326256, the special hope of Japan Patent (on September 18th, 2003 filed an application to the Japan special permission Room), No. 2004-042993, the special hope of Japan Patent (on February 19th, 2004 filed an application to the Japan special permission Room), No. 2004-055890, the special hope of Japan Patent (on March 1st, 2004 filed an application to the Japan special permission Room).

Claims (14)

1. metal-base circuit board, described metal-base circuit board be used for by on the metallic plate across the circuit of insulating barrier setting, be installed on output on the described circuit with semiconductor element, be located at the metal-base circuit board of the hybrid integrated circuit that the described output of control on the described circuit constitutes with semiconductor element with the control of semiconductor element, it is characterized in that, bury low electrostatic capacitance part underground with the bottom of the circuit part of semiconductor element in the described control of lift-launch; In addition, low electrostatic capacitance part is made of the resin that contains inorganic filler, and dielectric constant is 2～9; Single face on metallic plate, pit part part around is to be set up under the non-opened state, on the metal covering at the gap of described pit part and described pit part place the insulating barrier that is made of same material is set all; Should low electrostatic capacitance partly have 50pF/cm 2Following electrostatic capacitance.
2. metal-base circuit board as claimed in claim 1, its feature are that also the thickness of low electrostatic capacitance part is 100～1000 μ m.
3. as each the described metal-base circuit board in the claim 1～2, its feature also is, carry control with the circuit part of semiconductor element across insulating barrier B be arranged on be embedded in metallic plate low electrostatic capacitance partly above.
4. metal-base circuit board as claimed in claim 1, its feature also is, the depth capacity of pit part is 10～50% of a plate thickness, and when vertically overlooking pit part, its size accounts for more than 50% of metallic plate area, and in the shape of pit part when vertically overlooking, the radius of curvature of corner is more than the 2.5mm.
5. metal-base circuit board as claimed in claim 1, its feature are that also insulating barrier is made of the resin that contains inorganic filler, and the young's modulus in compression after the resin combination curing is below the 15000MPa when 300K.
6. the manufacture method of metal-base circuit board, described method be used for by metallic plate, the insulating barrier that is provided with on the described metallic plate, the circuit that is provided with on the described insulating barrier, be installed on output on the described circuit with semiconductor element, be arranged on the manufacture method of the metal-base circuit board of the hybrid integrated circuit that the described output of control on the described circuit constitutes with semiconductor element with the control of semiconductor element, it is characterized in that possessing following steps: (1) forms the step of depressed part on the interarea that insulating barrier one side is set of metallic plate; (2) on the metallic plate beyond described depressed part and the described depressed part, be coated with the step of insulating binder to same apparent height; (3) on the surface of described insulating binder, metal forming is set, makes described insulating binder solidify the step of making metal bonded body; (4) step of the metal-foil circuit of the described metal bonded body of processing.
7. the manufacture method of metal-base circuit board as claimed in claim 6, its feature also is, makes the metallic plate that has depressed part on the described interarea by following steps:
(a) desired position is provided with the step of the insulating barrier A that the resin contain inorganic filler constitutes on an interarea of metallic plate;
(b) with described insulating barrier A as mask, etching metal plate forms the step of depressed part at metal sheet surface.
8. metal-base circuit board, described metal-base circuit board is the metal-base circuit board that is used for by metallic plate, at the insulating barrier that is provided with on the described metallic plate, at the circuit that is provided with on the described insulating barrier, is installed on the hybrid integrated circuit that a plurality of semiconductor elements on the described circuit constitute, it is characterized in that, for the part of the part of the non-semiconductor element mounting portion of described circuit, dielectric constant be set be 2～9 low-k part on the metallic plate of the bottom of this circuit part; Described low-k part is provided with pit part by the surface at described metallic plate, fills the resin that contains inorganic filler to described pit part and forms.
9. metal-base circuit board as claimed in claim 8, its feature are that also the sidewall of pit part has 35～65 ° inclination angle.
10. metal-base circuit board as claimed in claim 8, its feature also is, inorganic filler is made of fused silica, and described fused silica contains the particle of average grain diameter 6～30 μ m of particle, 18.0～80.0 volume % of average grain diameter 0.3～5.0 μ m of 3.5～45.0 volume %.
11. metal-base circuit board, described metal-base circuit board is to be used for by metallic plate, the insulating barrier that on described metallic plate, is provided with, the circuit that on described insulating barrier, is provided with, be installed on the metal-base circuit board of the hybrid integrated circuit of a plurality of semiconductor elements formations on the described circuit, it is characterized in that, part for the part of the non-semiconductor element mounting portion of described circuit, surface at the metallic plate of the bottom of this circuit part is provided with pit part, fill the resin that contains inorganic filler to described pit part, and pit part corner when vertically overlooking has the radius of curvature more than the 0.4mm.
12. metal-base circuit board as claimed in claim 11, its feature also is, inorganic filler is made of fused silica, and described fused silica contains the particle of average grain diameter 6～30 μ m of particle, 18.0～80.0 volume % of average grain diameter 0.3～5.0 μ m of 3.5～45.0 volume %.
13. metal-base circuit board, it is characterized in that, described metal-base circuit board is that the manufacture method by the described metal-base circuit board of claim 6 obtains, and insulating binder is made of the resin that contains inorganic filler, and the pyroconductivity after solidifying is more than 1.3W/mK.
14. metal-base circuit board as claimed in claim 13, its feature also be, the electrostatic capacitance of having filled circuit on the depressed part of insulating binder and the unit are between the metallic plate is at 50pF/cm 2Below, and beyond the described depressed part circuit of part and the electrostatic capacitance of the unit are between the metallic plate at 50pF/cm 2More than, 160pF/cm 2Below.
CNB200480009856XA 2003-04-15 2004-04-15 Metal-base circuit board and its manufacturing method Expired - Fee Related CN100490129C (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP110377/2003 2003-04-15
JP2003110377A JP3992640B2 (en) 2003-04-15 2003-04-15 Method for manufacturing metal-based circuit board
JP275979/2003 2003-07-17
JP326256/2003 2003-09-18
JP042993/2004 2004-02-19
JP055890/2004 2004-03-01

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JP5189576B2 (en) * 2009-10-05 2013-04-24 日本電波工業株式会社 Voltage controlled oscillator
CN104011718B (en) 2011-12-19 2018-01-23 国际商业机器公司 For method, computer-readable medium and the computer of the message groups for selecting identification

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000151050A (en) * 1998-11-12 2000-05-30 Nippon Rika Kogyosho:Kk Composite insulation metal board
US6299053B1 (en) * 1998-08-19 2001-10-09 Kulicke & Soffa Holdings, Inc. Isolated flip chip or BGA to minimize interconnect stress due to thermal mismatch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6299053B1 (en) * 1998-08-19 2001-10-09 Kulicke & Soffa Holdings, Inc. Isolated flip chip or BGA to minimize interconnect stress due to thermal mismatch
JP2000151050A (en) * 1998-11-12 2000-05-30 Nippon Rika Kogyosho:Kk Composite insulation metal board

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