CN100487889C - 芯片封装构造、芯片构造及芯片形成方法 - Google Patents

芯片封装构造、芯片构造及芯片形成方法 Download PDF

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CN100487889C
CN100487889C CNB2007101092087A CN200710109208A CN100487889C CN 100487889 C CN100487889 C CN 100487889C CN B2007101092087 A CNB2007101092087 A CN B2007101092087A CN 200710109208 A CN200710109208 A CN 200710109208A CN 100487889 C CN100487889 C CN 100487889C
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林家旭
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Advanced Semiconductor Engineering Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175Flow barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015Shape
    • H01L2924/10155Shape being other than a cuboid

Abstract

本发明公开一种防止爬胶的芯片封装构造,其主要包括一承载器、一芯片及一底胶。芯片设置于承载器上,芯片包括有一芯片本体及一挡胶部,芯片本体具有至少一侧面,挡胶部形成于该侧面,挡胶部具有一顶面与一底面,挡胶部的底面与顶面之间构成有一夹角,该夹角为锐角。底胶形成于承载器与芯片之间且能够被挡胶部的底面阻挡,以防止底胶向上爬胶而污染芯片。

Description

芯片封装构造、芯片构造及芯片形成方法
技术领域
本发明是有关于一种芯片封装构造、芯片构造及芯片形成方法,且特别是有关于一种可防止底胶爬胶的芯片封装构造、芯片构造及芯片形成方法。
背景技术
为了降低芯片与承载器间的电子信号传输距离并可缩小封装后的芯片封装构造尺寸,将芯片以倒装封装的方式结合于承载器,如图1所示,现有芯片封装构造100包括一承载器110、一芯片120及一底胶130。该承载器110的一表面111上形成有若干个连接垫112,该芯片120以倒装封装的方式结合于该承载器110的该表面111,该芯片120具有一有源表面121与一背面122,该芯片120的该有源表面121具有若干个焊垫123,若干个凸块140连接该承载器110上的这些连接垫112与该芯片120上的这些焊垫123,该底胶130形成于该承载器110与该芯片120之间以保护这些凸块140,然而,在烘烤步骤中,该底胶130的黏度会降低而沿着该芯片120的侧面流动并延伸至该芯片120的该背面122(此现象又称爬胶),从而造成芯片120被污染。
发明内容
本发明的主要目的在于提供一种芯片封装结构,其可以防止底胶爬胶,从而保护芯片免受污染,以确保芯片的信号传输效果。
本发明的另一目的在于提供一种芯片构造及芯片形成方法,其设置有挡胶部,采用该芯片可以防止底胶爬胶,从而保护芯片免受污染,以确保芯片的信号传输效果。
为达成上述目的或是其它目的,本发明采用如下技术方案:一种芯片封装构造,其包括有:一承载器、一芯片及一底胶,其中所述承载器具有一表面;所述芯片设置于所述承载器上,所述芯片包括有一芯片本体及一挡胶部,其中所述芯片本体具有一有源表面、一背面及位于所述有源表面和所述背面之间的侧面,所述挡胶部形成于所述芯片本体的侧面,所述挡胶部具有一顶面及一底面,所述挡胶部的顶面与所述挡胶部的底面构成一夹角,该夹角为锐角;以及所述底胶形成于所述承载器与所述芯片之间,且所述底胶被所述挡胶部的底面所挡止。
为达成上述目的或是其它目的,本发明还采用如下技术方案:一种芯片构造,其包括有一芯片本体,所述芯片本体具有一有源表面、一背面及位于所述有源表面和所述背面之间的侧面;其特征在于:所述芯片构造还包括有一挡胶部,所述挡胶部形成于所述芯片本体的侧面,所述挡胶部具有一顶面及一底面,所述挡胶部的顶面与所述挡胶部的底面形成一夹角,所述夹角为锐角。
为达成上述目的或是其它目的,本发明还采用如下技术方案:一种芯片形成方法,其步骤为:提供一晶圆,所述晶圆具有若干个芯片及若干个位于这些芯片之间的切割区域,每一芯片均包括有一芯片本体与一挡胶部,所述芯片本体具有一有源表面、一背面及位于所述有源表面和所述背面之间的侧面;以及沿着这些切割区域切割所述晶圆以分离这些芯片,并使所述挡胶部形成有一顶面及一底面,所述挡胶部的顶面与所述挡胶部的底面构成一夹角,所述夹角为锐角。
相较于现有技术,本发明是通过在芯片上形成一挡胶部,从而能够防止底胶爬胶,而且本发明芯片封装构造、芯片构造及芯片形成方法均为简单,有利于控制其质量及成本。
附图说明
图1为现有芯片封装构造的截面示意图。
图2为依据本发明的第一具体实施例而绘制的一种具有防止爬胶芯片的芯片封装构造的截面示意图。
图3为依据本发明的第一具体实施例而绘制的该晶圆进行切割前的局部上视图。
图4A至图4C为依据本发明的第一具体实施例而绘制的一种防止爬胶的晶圆切割制程的截面示意图。
图5A至图5D为依据本发明的第一具体实施例而绘制的另一种防止爬胶的晶圆切割制程的截面示意图。
具体实施方式
请参阅图2所示,本发明的一具体实施例揭示一种芯片封装构造200,其包括一承载器210、一芯片220及一底胶230。该承载器210具有一表面211,该表面211上形成有若干个连接垫212,该芯片220设置于该承载器210的该表面211上并电性连接该承载器210,该芯片220包括有一芯片本体221与一挡胶部222,该芯片本体221具有一有源表面223、一背面224及位于该有源表面223与该背面224之间的侧面225,该有源表面223上形成有若干个焊垫226,此外,该芯片220还包括有若干个凸块240,这些凸块240设置于该有源表面223的这些焊垫226上,该芯片本体221的该有源表面223朝向该承载器210的该表面211,且通过这些凸块240接合于该承载器210的这些连接垫212上,该挡胶部222可以一体形成于该芯片本体221的该侧面225,在本实施例中,该挡胶部222具有一顶面227、一底面228及一在该顶面227与该底面228之间的侧壁229,该顶面227与该底面228延伸交错形成一夹角A,该夹角A为锐角,其中该挡胶部222的该顶面227可与该芯片本体221的该背面224相平齐,或者是在另一实施例中,该挡胶部222的该顶面227平行于该芯片本体221的该背面224。该挡胶部222的该底面228可以是斜面或是弧面,在本实施例中,该底面228为斜面。该挡胶部222的该侧壁229的高度H不大于该芯片本体221的厚度h的一半,该顶面227的宽度L不小于5微米(μm)。该底胶230形成于该承载器210与该芯片220之间且该底胶230被阻挡(或称挡止)于该挡胶部222的该底面228下方,该芯片220的该挡胶部222可防止该底胶230爬胶而污染该芯片220。
请参阅图3、图4A至图4C,其为一种防止爬胶的芯片的形成方法,首先,请参阅图3及图4A,提供一晶圆300,该晶圆300具有若干个芯片310及若干个位于这些芯片310之间的切割区域320,其中每一芯片310均包括有一芯片本体311与一挡胶部312,该芯片本体311具有一有源表面313、一背面314及一侧面315(如图4B中所示),该有源表面313上形成有若干个焊垫313a,这些焊垫313a上设置有若干个凸块330。接着,请参阅图4B,沿着这些切割区域320切割该晶圆300以分离这些芯片310,在本实施例中,这些芯片310由一切割刀具10一次切割完成,之后,请参阅图4C,切割完成后的该挡胶部312形成有一顶面316、一底面317及一位于该顶面316与该底面317之间的侧壁318,该顶面316与该底面317可以延伸交错构成一夹角A,该夹角A为锐角,在本实施例中,该挡胶部312的该底面317为一斜面,且该挡胶部312的该顶面316与该芯片本体311的该背面314相平齐,此外,该挡胶部312的该侧壁318的高度H不大于该芯片本体311的厚度h的一半,该顶面316的宽度L不小于5微米(μm)。
在其它实施例中,通过采用不同的切割刀具10,这些芯片310可以二次切割完成,请参阅图5A至图5C,其为另一种防止爬胶的芯片的形成方法,首先,请参阅图5A,提供一晶圆300,该晶圆300具有若干个芯片310及若干个位于这些芯片310之间的切割区域320,其中每一芯片310均包括有一芯片本体311与一挡胶部312,该芯片本体311具有一有源表面313、一背面314及一侧面315,在该有源表面313上形成有若干个焊垫313a,在这些焊垫313a上设置有若干个凸块330。接着,请参阅图5B,在本实施例中,这些芯片310是经过二次切割所完成,第一次切割时,该切割刀具10沿着这些切割区域320进行切割,使该晶圆300的这些切割区域320形成有若干个弧状凹槽321,接着,请参阅图5C,沿着这些弧状凹槽321进行第二次切割以分离这些芯片310,之后,请参阅图5D,切割完成后该芯片310的该挡胶部312形成有一顶面316及一底面317,该顶面316与该底面317之间构成一夹角A,该夹角A为锐角,该挡胶部312的该顶面316与该芯片本体311的该背面314相平齐,在本实施例中,该底面316为弧面。

Claims (10)

1.一种芯片封装构造,其包括有:一承载器、一芯片及一底胶,其中所述承载器具有一表面;所述芯片设置于所述承载器上,所述芯片包括有一芯片本体,所述芯片本体具有一有源表面、一背面及位于所述有源表面和所述背面之间的侧面;以及所述底胶形成于所述承载器与所述芯片之间,其特征在于:所述芯片还包括有一形成于所述芯片本体的侧面上的挡胶部,所述挡胶部具有一顶面及一底面,所述挡胶部的顶面与所述挡胶部的底面构成一夹角,该夹角为锐角;所述底胶被所述挡胶部的底面所挡止。
2.如权利要求1所述的芯片封装构造,其特征在于:所述芯片还包括有若干个凸块,这些凸块设置于有源表面上,所述芯片本体的有源表面朝向所述承载器的表面,且利用这些凸块接合于所述承载器。
3.如权利要求1所述的芯片封装构造,其特征在于:所述挡胶部的顶面与所述芯片本体的背面相平齐,所述挡胶部的底面为斜面或弧面。
4.如权利要求1所述的芯片封装构造,其特征在于:所述挡胶部具有一位于其顶面与底面之间的侧壁,所述挡胶部的侧壁的高度不大于所述芯片本体厚度的一半,所述挡胶部的顶面的宽度不小于5微米。
5.一种芯片构造,其包括有一芯片本体,所述芯片本体具有一有源表面、一背面及位于所述有源表面和所述背面之间的侧面;其特征在于:所述芯片构造还包括有一挡胶部,所述挡胶部形成于所述芯片本体的侧面,所述挡胶部具有一顶面及一底面,所述挡胶部的顶面与所述挡胶部的底面形成一夹角,所述夹角为锐角。
6.如权利要求5所述的芯片构造,其特征在于:所述挡胶部的顶面平齐于所述芯片本体的背面,所述挡胶部的底面为斜面或弧面,所述挡胶部具有一位于其顶面与底面之间的侧壁,所述挡胶部的侧壁的高度不大于所述芯片本体厚度的一半,所述挡胶部的顶面的宽度不小于5微米。
7.一种芯片形成方法,其特征在于:其包括有如下步骤:
提供一晶圆,所述晶圆具有若干个芯片及若干个位于这些芯片之间的切割区域,每一芯片均包括有一芯片本体与一挡胶部,所述芯片本体具有一有源表面、一背面及位于所述有源表面和所述背面之间的侧面;以及
沿着这些切割区域切割所述晶圆以分离这些芯片,并使所述挡胶部形成有一顶面及一底面,所述挡胶部的顶面与所述挡胶部的底面构成一夹角,所述夹角为锐角。
8.如权利要求7所述的芯片形成方法,其特征在于:所述挡胶部的顶面平齐于所述芯片本体的背面,所述挡胶部的底面为斜面或弧面。
9.如权利要求7所述的芯片形成方法,其特征在于:所述挡胶部形成有一位于其顶面与底面之间的侧壁,所述挡胶部的侧壁的高度不大于所述芯片本体厚度的一半,所述挡胶部的顶面的宽度不小于5微米。
10.如权利要求7所述的芯片形成方法,其特征在于:这些芯片是经过一次或二次切割完成的。
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