CN100478784C - 全透明无铬移相掩模实现100纳米图形加工的方法 - Google Patents
全透明无铬移相掩模实现100纳米图形加工的方法 Download PDFInfo
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- CN100478784C CN100478784C CNB2005100562809A CN200510056280A CN100478784C CN 100478784 C CN100478784 C CN 100478784C CN B2005100562809 A CNB2005100562809 A CN B2005100562809A CN 200510056280 A CN200510056280 A CN 200510056280A CN 100478784 C CN100478784 C CN 100478784C
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- phase shift
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- 230000010363 phase shift Effects 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000012545 processing Methods 0.000 title claims abstract description 19
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 31
- 239000011651 chromium Substances 0.000 claims abstract description 31
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 34
- 238000010894 electron beam technology Methods 0.000 claims description 15
- 238000011161 development Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 13
- 239000003292 glue Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 4
- 229910002651 NO3 Inorganic materials 0.000 claims description 4
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000012544 monitoring process Methods 0.000 claims description 4
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 abstract description 9
- 238000011160 research Methods 0.000 abstract description 5
- 238000001312 dry etching Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 7
- 238000005457 optimization Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2005100562809A CN100478784C (zh) | 2005-04-04 | 2005-04-04 | 全透明无铬移相掩模实现100纳米图形加工的方法 |
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CNB2005100562809A CN100478784C (zh) | 2005-04-04 | 2005-04-04 | 全透明无铬移相掩模实现100纳米图形加工的方法 |
Publications (2)
Publication Number | Publication Date |
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CN1847984A CN1847984A (zh) | 2006-10-18 |
CN100478784C true CN100478784C (zh) | 2009-04-15 |
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Application Number | Title | Priority Date | Filing Date |
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CNB2005100562809A Active CN100478784C (zh) | 2005-04-04 | 2005-04-04 | 全透明无铬移相掩模实现100纳米图形加工的方法 |
Country Status (1)
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CN (1) | CN100478784C (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101393386B (zh) * | 2008-10-28 | 2010-12-01 | 清溢精密光电(深圳)有限公司 | FPD掩膜版制作设备制作Reticle掩膜版的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1534382A (zh) * | 2003-01-09 | 2004-10-06 | ASML�عɹɷ�����˾ | 利用磁力的可拆卸模版窗口和支撑框架 |
CN1536445A (zh) * | 2003-04-09 | 2004-10-13 | Asml | 光刻设备、装置制造方法和计算机程序 |
CN1577105A (zh) * | 2003-07-08 | 2005-02-09 | 佳能株式会社 | 曝光装置 |
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2005
- 2005-04-04 CN CNB2005100562809A patent/CN100478784C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1534382A (zh) * | 2003-01-09 | 2004-10-06 | ASML�عɹɷ�����˾ | 利用磁力的可拆卸模版窗口和支撑框架 |
CN1536445A (zh) * | 2003-04-09 | 2004-10-13 | Asml | 光刻设备、装置制造方法和计算机程序 |
CN1577105A (zh) * | 2003-07-08 | 2005-02-09 | 佳能株式会社 | 曝光装置 |
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CN1847984A (zh) | 2006-10-18 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Effective date: 20130326 |
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Effective date of registration: 20130326 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130418 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130418 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130418 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |