CN100478179C - Actuator device, method for producing same, liquid-jet head and liquid-jet apparatus - Google Patents
Actuator device, method for producing same, liquid-jet head and liquid-jet apparatus Download PDFInfo
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- CN100478179C CN100478179C CNB2006101097300A CN200610109730A CN100478179C CN 100478179 C CN100478179 C CN 100478179C CN B2006101097300 A CNB2006101097300 A CN B2006101097300A CN 200610109730 A CN200610109730 A CN 200610109730A CN 100478179 C CN100478179 C CN 100478179C
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Abstract
The inveniton provides a manufacturing method of actuator equipment and the actuator equipment which can excellently keep a piezo-electric property of piezo-electric material, and can prevent an upper electrode from lifting, and provides a liquid injection head and liquid injection equipment. The manufacturing method comprises a process of forming a diaphragm in a substrate; and process of forming a piezo-electric element consisting of lower electrode, piezo-electric material layer, and the upper electrode in the diaphragm. In the process of forming the piezo-electric element, the upper electrode 30-100(nm) in thickness, 0.3-2.0(GPa) in stress, and 2.0(*10<-7> Omega.m) or less in specific resistivity in the condition that temperature is 25-250 DEG C, and that pressure is 0.4-1.5(Pa), is formed by a spattering method on the piezo-electric material layer.
Description
Technical field
The present invention relates on oscillating plate, have the actuator devices and the manufacture method thereof of piezoelectric element, the jet head liquid that uses this actuator devices and liquid injection apparatus, wherein said piezoelectric element is made of bottom electrode, piezoelectric body layer and top electrode, and described piezoelectric body layer is formed by piezoelectric.
Background technology
As the piezoelectric element that is used for actuator devices, have with bottom electrode and top electrode two electrode clampings piezoelectric body layer and the piezoelectric element that constitutes, described piezoelectric body layer is formed by piezoelectric ceramics of the piezoelectric that is dynamo-electric translation function, for example crystallization etc.This actuator devices is commonly called the actuator devices of bending vibration pattern, for example is installed in jet head liquid etc. to use.In addition, representative example as jet head liquid, ink jet recording head etc. is for example arranged, in this ink jet recording head, the part of the pressure generating chamber that is communicated with the nozzle opening of ejection ink droplet is made of oscillating plate, make the distortion of this oscillating plate by piezoelectric element, the ink of pressure generating chamber is pressurizeed, thereby from nozzle opening ejection ink droplet.In addition, as the actuator devices that is installed in the ink jet recording head, for example have: on the whole surface of oscillating plate, form uniform piezoelectric material layer by film technique, by lithographic plate printing method this piezoelectric material layer is cut into the corresponding shape with pressure generating chamber, thereby form each pressure generating chamber piezoelectric element (for example, with reference to patent documentation 1) independently separately.
In having the actuator devices of this piezoelectric element, by this precision of lithographic plate printing method, simple method, not only can be to high-density fixing piezoelectric element, but also can make the very thin thickness of piezoelectric element, thus can high-speed driving.But the piezoelectric element of Xing Chenging exists the problem that film that membranous or membrane stress by each film that constitutes piezoelectric element etc. caused is peeled off like this.Especially the superiors of piezoelectric element, be that top electrode is peeled off from piezoelectric body layer easily.
In addition, in order to adjust the stress of the film that constitutes piezoelectric element, for example stress relaxation layer (for example, with reference to patent documentation 2) can be set between piezoelectric layer (piezoelectric body layer).By making this structure, can prevent to a certain extent that perhaps the film that constitutes piezoelectric element from peeling off.But, thereby the piezoelectric property that but exists piezoelectric body layer reduces the danger that causes the displacement that can't obtain to want when driving piezoelectric element.
Certainly, there is this problem in the actuator devices that not only is installed in the jet head liquid such as ink jet recording head, and all there is same problem in the actuator devices that are installed on other all devices.
Patent documentation 1: the Japanese documentation spy opens flat 5-286131 communique (Fig. 3, the 0013rd section etc.);
Patent documentation 2: the Japanese documentation spy opens 2004-128492 communique (claim etc.).
Summary of the invention
The present invention finishes in view of above problem, and its purpose is to provide a kind of and can keeps the piezoelectric property of good piezoelectric body layer and can prevent the actuator devices that top electrode peels off, manufacture method, jet head liquid and the liquid injection apparatus of this actuator devices.
In order to address the above problem, the manufacture method of the actuator devices of the present invention's first mode is characterised in that, have and forming the step of oscillating plate on the substrate and on this oscillating plate, forming by bottom electrode, piezoelectric body layer, and the step of the piezoelectric element of top electrode formation, in the step that forms described piezoelectric element, on described piezoelectric body layer, form described top electrode by sputtering method, temperature when making sputter be 25～250 (℃), pressure is 0.4～1.5 (Pa), and forming thickness thus is 30～100 (nm), stress is 0.3～2.0 (Gpa), and resistivity is 2.0 (* 10
-7Ω m) Yi Xia described top electrode.
By this first mode, owing to guaranteed the cohesive of top electrode and piezoelectric body layer, so can keep the piezoelectric property of good piezoelectric body layer and can improve the membranous of top electrode.Therefore, can realize the actuator devices that placement property and durability are all good.
Second mode of the present invention is as the manufacture method of actuator devices as described in first mode, it is characterized in that, making the power density when forming described top electrode is 3～30 * 10
3W/m
2
By this second mode, can form top electrode more reliably with expectation stress.
Third Way of the present invention is as the manufacture method of actuator devices as described in first or second mode, it is characterized in that, uses iridium (Ir) to be used as the material of described top electrode.
In this Third Way, be used as top electrode by using predetermined material, improved the membranous of top electrode more reliably.
Cubic formula of the present invention is a kind of actuator devices, it is characterized in that, described actuator devices be by first to the Third Way the manufacture method of any mode make.
In described cubic formula, realized the actuator devices that placement property and durability are significantly increased.
The 5th mode of the present invention is a kind of jet head liquid, it is characterized in that described jet head liquid has the actuator devices of cubic formula.
In described the 5th mode, realized the jet head liquid that the ejection characteristic is good and durability significantly improves.
The 6th mode of the present invention is a kind of liquid injection apparatus, it is characterized in that, has the jet head liquid of the 5th mode.
By the 6th mode,, therefore can realize the liquid injection apparatus that reliability significantly improves owing to improved ejection characteristic and durability.
Description of drawings
Fig. 1 is the exploded perspective view of general structure that the record head of first embodiment of the invention is shown;
Fig. 2 is the plane and the sectional view of the record head of first embodiment of the invention;
Fig. 3 is the sectional view of manufacture method of the record head of expression first embodiment of the invention;
Fig. 4 is the sectional view of manufacture method of the record head of expression first embodiment of the invention;
Fig. 5 is the sectional view of manufacture method of the record head of expression first embodiment of the invention;
Fig. 6 is the sectional view of manufacture method of the record head of expression first embodiment of the invention;
Fig. 7 is the B-H loop of the pzt thin film of embodiment and comparative example;
Fig. 8 is the sketch of the tape deck of an embodiment of the invention.
The specific embodiment
Below, explain the present invention according to embodiment.
(first embodiment)
Fig. 1 is the exploded perspective view of brief configuration that the ink jet recording head of first embodiment of the invention is shown, (a) among Fig. 2 and (b) be the plane of Fig. 1 and along sectional view that A-A ' got.As shown in the figure, in the present embodiment, stream formation substrate 10 is formed by the monocrystalline silicon substrate of planar orientation (110), and being formed with thickness on one surface is the elastic membrane 50 of 0.5～2 μ m, and this elastic membrane 50 is made of the silica that forms by the preheating oxidation.On stream forms substrate 10, on its width, be set up in parallel a plurality of pressure generating chamber 12 that goes out by next door 11 zonings.In addition, be formed with interconnecting part 13 in stream forms the zone in the length direction outside of pressure generating chamber 12 of substrate 10, interconnecting part 13 is connected by the ink feed path 14 that is provided with respectively by each pressure generating chamber 12 with each pressure generating chamber 12.In addition, interconnecting part 13 is communicated with the reservoir of protective substrate described later, and constitutes the part as the reservoir of shared ink chamber of each pressure generating chamber 12.The width specific pressure generating chamber 12 of ink feed path 14 is narrow, keeps constant thereby make from the flow path resistance of the ink of interconnecting part 13 feed pressure generating chamber 12.
In addition, opening surface one side that forms substrate 10 at stream is mask 52 and apply film etc. by bonding agent or hot melt and be fixed with nozzle plate 20 at interval, penetrates with near the nozzle opening 21 that is communicated with the end of the side opposite with ink feed path 14 of each pressure generating chamber 12 to be arranged on this nozzle plate 20.In addition, nozzle plate 20 is for example formed by glass ceramics, monocrystalline silicon substrate or stainless steel.
On the other hand, form at stream and be formed with aforesaid formed by silica, elastic membrane 50 that thickness for example is approximately 1.0 μ m on the side opposite with opening surface of substrate 10, lamination is formed with for example by zirconium dioxide (ZrO on this elastic membrane 50
2) wait formation, thickness for example is approximately the insulator film 55 of 0.4 μ m.In addition, be formed with piezoelectric element 300 on insulator film 55, described piezoelectric element 300 for example is approximately the upper electrode film 80 that the lower electrode film 60 of 0.1～0.2 μ m, piezoelectric body layer 70 that thickness for example is approximately 0.5～5 μ m and thickness for example is approximately 0.05 μ m by thickness and constitutes.That is, in the present invention, oscillating plate has oxide-film, is formed with piezoelectric element 300 on this oxide-film.In addition, usually with some electrodes of piezoelectric element 300 as common electrode, and another electrode and piezoelectric body layer 70 are carried out patterning by each pressure generating chamber 12.In the present embodiment, with the common electrode of lower electrode film 60 as piezoelectric element 300, with the electrode special of upper electrode film 80 as piezoelectric element 300, but also can be according to the situation of drive circuit or wiring with its exchange.In addition, here, the oscillating plate that piezoelectric element 300 and the driving by this piezoelectric element 300 is changed the position is collectively referred to as actuator devices.
In addition, for example on the upper electrode film 80 of this each piezoelectric element 300, be connected with the lead electrode 90 that forms by gold (Au) etc. respectively, optionally apply voltage to each piezoelectric element 300 by this lead electrode 90.
In addition, in the present embodiment, except the zone relative with the connecting portion 90a of the connecting portion 60a of lower electrode film 60 and lead electrode 90, the dielectric film 95 that the cloth graph region of each layer of piezoelectric element 300 and lead electrode 90 is all formed by insulating materials covers.That is, except this connecting portion 60a, 90a, the surface of lower electrode film 60, piezoelectric body layer 70, upper electrode film 80 and lead electrode 90 is insulated film 95 and covers.Thus, the moisture (moisture) that can prevent piezoelectric body layer 70 causes damage.In addition, there is no particular limitation for the material of dielectric film 95, so long as inorganic insulating material gets final product, for example, can list alundum (Al (Al
2O
3), tantalum pentoxide (Ta
2O
5) etc., especially preferably use alundum (Al (Al
2O
3).
Form on the substrate 10 at the stream that is being formed with this piezoelectric element 300, by joints such as bonding agents the protective substrate 30 with piezoelectric element maintaining part 31 is arranged in the zone relative with piezoelectric element 300, this piezoelectric element maintaining part 31 is used to protect piezoelectric element 300.In addition, the space that piezoelectric element maintaining part 31 is guaranteed only otherwise the motion that can hinder piezoelectric element 300 gets final product both can seal this space, also can not seal.In addition, on protective substrate 30, be provided with reservoir 32 in the zone relative with interconnecting part 13, this reservoir 32 is communicated with interconnecting part 13 that stream forms substrate 10 as mentioned above and constitutes reservoir 100 as shared ink chamber of each pressure generating chamber 12.In addition; in the piezoelectric element maintaining part 31 of protective substrate 30 and the zone between the reservoir 32, be provided with the through hole 33 that on thickness direction, runs through protective substrate 30; the head portion of the part of lower electrode film 60 and lead electrode 90 is exposed in this through hole 33; although not shown, on this lower electrode film 60 and lead electrode 90, be connected with an end that extends the connecting wiring that is provided with from drive IC.
As protective substrate 30, preferably use coefficient of thermal expansion and stream to form the roughly the same material of substrate 10, for example glass, ceramic material etc.In the present embodiment, use the identical monocrystalline silicon substrate of material and stream formation substrate 10.
On protective substrate 30, engage the flexible base, board 40 that is made of diaphragm seal 41 and fixed head 42 is arranged.Here, diaphragm seal 41 is low and have flexual material (for example, thickness is polyphenylene sulfide (PPS) film of 6 μ m) and form by rigidity, seals a surface of reservoir 32 by sealing film 41.In addition, fixed head 42 is formed by hard materials such as metal (for example, thickness is the stainless steel (SUS) of 30 μ m etc.).The zone relative with reservoir 100 of this fixed head 42 forms the peristome of being removed fully 43 on thickness direction, therefore only come a surface of sealing storage 100 to have flexual diaphragm seal 41.
In this ink jet recording head of present embodiment, obtain ink from not shown external ink feeding unit, after 21 inside is full of by ink from reservoir 100 to nozzle opening, according to tracer signal from drive circuit IC, between each lower electrode film 60 corresponding and upper electrode film 80, apply voltage with pressure generating chamber 12, make elastic membrane 50, lower electrode film 60 and piezoelectric body layer 70 flexural deformations, pressure in each pressure generating chamber 12 raises thus, thereby from nozzle opening 21 ejection ink droplets.
Below, the manufacture method of ink jet recording head is described with reference to Fig. 3～Fig. 6.In addition, Fig. 3～Fig. 6 is the sectional view of the length direction of pressure generating chamber 12.At first, shown in (a) among Fig. 3, form substrate with about 1100 ℃ diffusion furnace flow path and carry out thermal oxide and form the silicon dioxide film 51 that constitutes elastic membrane 50 in its surface with wafer 110, this substrate is a silicon wafer with wafer 110.In addition, in the present embodiment, the silicon wafer thicker, high rigidity that uses thickness to be approximately 625 μ m forms substrate wafer 110 as stream.
Then, shown in (b) among Fig. 3, go up the insulator film 55 that formation is made of zirconia in elastic membrane 50 (silicon dioxide film 51).Specifically, after for example forming zirconium (Zr) layer by sputter (sputtering) method on the elastic membrane 50 (silicon dioxide film 51), for example this zirconium layer is carried out thermal oxide, form thus by zirconium dioxide (ZrO with the diffusion furnace under 500～1200 ℃
2) insulator film 55 that constitutes.
Then, shown in (c) among Fig. 3, after having formed the lower electrode film 60 that constitutes by platinum (Pt), iridium (Ir) etc. on the whole surface of insulator film 55, it is patterned as predetermined shape.For example, in the present embodiment, film that constitutes by iridium by the sputtering method lamination and the film that constitutes by platinum, and be reservation shape with a plurality of film patternings of lamination, form lower electrode film 60 thus.
Then, shown in (d) among Fig. 3, for example on bottom electrode 60 and dielectric film 55, apply titanium (Ti), form the titanium crystal seed layer 65 of predetermined thickness thus by sputtering method etc.Then, on this titanium crystal seed layer 65, form by piezoelectric, be the piezoelectric body layer 70 that lead zirconate titanate (PZT) constitutes in the present embodiment.In addition, in the present embodiment, metallorganic is dissolved, is dispersed in the so-called colloidal sol of acquisition in the catalyst, dry this colloidal sol of coating also makes its gelation, bake with high temperature again, obtain the piezoelectric body layer 70 that constitutes by metal oxide thus, promptly use sol-gel process to form piezoelectric body layer 70.In addition, the manufacture method of piezoelectric body layer 70 is not limited to sol-gel process, for example also can use MOD (Metal-Organic Decomposition, organic metal cracking) method etc.
As an example of the formation order of piezoelectric body layer 70, at first shown in (a) among Fig. 4, film forming forms the piezoelectrics precursor film 71 as the PZT precursor film on titanium crystal seed layer 65.That is, forming substrate at stream applies on wafer 110 and contains metal-organic colloidal sol (solution).Then, piezoelectrics precursor film 71 is heated to predetermined temperature, and is dried certain hour, make the solvent evaporation of colloidal sol, make piezoelectrics precursor film 71 dryings thus.And, in air atmosphere, make the 71 degreasing regular hours of piezoelectrics precursor film at a certain temperature.In addition, said here degreasing is to instigate the organic principle of dissolved glue film to become for example NO
2, CO
2, H
2O etc. and breaking away from.
Then, this coating, operation dry, degreasing are repeated predetermined times, for example twice, then shown in (b) among Fig. 4, form the piezoelectrics precursor film 71 of predetermined thickness, with diffusion furnace etc. this piezoelectrics precursor film 71 is carried out heat treated, make it crystallization thus, thereby form piezoelectric body film 72.That is, to make crystallization be nucleus growth with titanium crystal seed layer 65 by baking piezoelectrics precursor film 71, thereby form piezoelectric body film 72.In addition, bake temperature and be preferably about 650～850 ℃, for example, in the present embodiment, under about 700 ℃, piezoelectrics precursor film 71 was baked 30 minutes, thereby form piezoelectric body film 72.The crystallization of the piezoelectric body film 72 that forms under this condition in addition, is preferential along (100) planar orientation.
Again by operation such as repeatedly repeat above-mentioned coating, drying, degreasing, bake, shown in (c) among Fig. 4, for example form the piezoelectric body layer 70 of the predetermined thickness that constitutes by five layers of piezoelectric body film 72.
In addition, as the material of piezoelectric body layer 70, for example also can use relaxation ferroelectric that in ferroelectric piezoelectrics such as lead zirconate titanate (PZT), has added metals such as niobium, nickel, magnesium, bismuth, yttrium etc.Characteristic, the purposes of consideration piezoelectric element wait selects its component to get final product aptly, for example can list: PbTiO
3(PT), PbZrO
3(PZ), Pb (Zr
xTi
1-x) O
3(PZT), Pb (Mg
1/3Nb
2/3) O
3-PbTiO
3(PMN-PT), Pb (Zn
1/3Nb
2/3) O
3-PbTiO
3(PZN-PT), Pb (Zi
1/3Nb
2/3) O
3-PbTiO
3(PNN-PT), Pb (In
1/2Nb
1/2) O
3-PbTiO
3(PIN-PT), Pb (Sc
1/3Ta
2/3) O
3-PbTiO
3(PST-PT), Pb (Sc
1/3Nb
2/3) O
3-PbTiO
3(PSN-PT), BiScO
3-PbTiO
3(BS-PT), BiYbO
3-PbTiO
3(BY-PT) etc.
After having formed piezoelectric body layer 70 like this, shown in (a) among Fig. 5, form with forming the upper electrode film 80 that for example constitutes on the whole surface of wafer 110 by iridium (Ir) at stream.At this moment, in the present invention, forming thickness by sputtering method, for example DC or RF sputtering method is that 30～100 (nm), stress are that 0.3～2.0 (GPa) and resistivity are 2.0 (* 10
-7Ω m) Yi Xia upper electrode film 80.In addition,,, represent the stress of compression direction with negative value here with stress on the occasion of the expression draw direction.
For the stress and the resistivity that make upper electrode film 80 is above-mentioned value, sputtering pressure when making film forming upper electrode film 80 is 0.4～1.5 (Pa), and the temperature when making film forming upper electrode film 80, stream form substrate and be in the scope of 25 ℃ of (normal temperature)～250 ℃ with the heating-up temperature of wafer 110.Thus, be the upper electrode film 80 of 30～100 (nm) by forming thickness, can make the stress of upper electrode film 80 and the value that resistivity is expectation.In addition, the temperature when making film forming upper electrode film 80 is in the scope of 25 ℃ of (normal temperature)～250 ℃, and the heat in the time of can preventing to form upper electrode film 80 causes damage to piezoelectric body layer 70, thereby can make piezoelectric body layer 70 keep good piezoelectric property.
In addition, there is no particular limitation to the power density (power density) when the sputtering film-forming upper electrode film, preferably makes it be in 3～30 (* 10
3W/m
2) scope in.Thus, can form the upper electrode film 80 that stress and resistivity are above-mentioned value more reliably.
In addition, by coming film forming upper electrode film 80 with above-mentioned condition, the resistivity that can make upper electrode film 80 is 2.0 (* 10
-7Ω m) below, and the pressure of the argon gases such as (Ar) that for example imports when changing with sputtering film-forming upper electrode film 80, the resistivity that also can regulate upper electrode film 80.
After having formed upper electrode film 80 like this, shown in (b) among Fig. 5, in the zone relative, piezoelectric body layer 70 and upper electrode film 80 are carried out patterning, thereby form piezoelectric element 300 with each pressure generating chamber 12.In addition, after having formed piezoelectric element 300, shown in (c) among Fig. 5, form substrate with forming the metal level 91 that for example waits formation on the whole surface of wafer 110 at stream by gold (Au), then, for example the mask pattern (not shown) by being made of resist etc. is carried out patterning by 300 pairs of metal levels of each piezoelectric element 91, forms lead electrode 90 thus.
Then, shown in (d) among Fig. 5, form for example by aluminium dioxide (Al
2O
3) dielectric film 95 that constitutes.That is, form at stream on the whole surface of substrate 10 and form dielectric film 95, by dry ecthings such as ion grindings this dielectric film 95 is carried out patterning then, the zone etc. of the connecting portion 90a that becomes the linking part of lower electrode film 60 60a and lead electrode 90 is exposed.
Then, shown in (a) among Fig. 6, forming substrate at stream has the protective substrate that will become a plurality of protective substrates 30 with wafer 130 with piezoelectric element 300 1 side engagement of wafer 110, and this protective substrate usefulness wafer 130 is a silicon wafer.In addition, because this protective substrate has for example thickness about 400 μ m with wafer 130, so, can improve stream significantly and form the rigidity of substrate with wafer 110 by splice protection substrate wafer 130.
Then, shown in (b) among Fig. 6, stream is formed substrate be ground to after to a certain degree the thickness, carry out wet etching by fluorine nitric acid again, make stream form substrate thus and have preset thickness with wafer 110 with wafer 110.For example, in the present embodiment, flow path forms substrate and carries out etching and processing with wafer 110, and making its thickness is about about 70 μ m.Then, shown in (c) among Fig. 6, on stream formation substrate usefulness wafer 110, form the mask 52 that for example constitutes again, and it is patterned as predetermined shape by silicon nitride (SiN).Then, form substrate by these mask 52 flow path and carry out anisotropic etching, shown in (d) among Fig. 6, form substrate with forming pressure generating chamber 12, interconnecting part 13 and ink feed path 14 etc. on the wafer 110 thus at stream with wafer 110.
Then, for example with cut-out such as cutting machine and remove stream form substrate with wafer 110 and protective substrate with the unwanted part on the peripheral edge portion of wafer 130.Then; form substrate at stream and penetrate the nozzle plate 20 that is provided with nozzle opening 21 with joint on wafer 110 and surface protective substrate opposite side with wafer 130; and at protective substrate connecting flexible substrate 40 on the wafer 130; stream is formed substrate form substrate 10 etc., make the ink jet recording head of present embodiment thus with the stream that wafer 110 grades are divided into a die size as shown in Figure 1.
As mentioned above, in the present invention, forming thickness is that 30～100 (nm), stress are that 0.3～2.0 (GPa) and resistivity are 2.0 (* 10
-7Ω m) upper electrode film 80 of Yi Xia formation piezoelectric element 300.Thus, can improve upper electrode film 80 and piezoelectric body layer 70 cohesive, prevent that upper electrode film 80 from peeling off and the electrical characteristics of piezoelectric body layer 70 can not reduce.That is, upper electrode film 80 is peeled off when the stress of compression direction is strong easily, and is difficult to peel off when the stress of draw direction is strong, but this moment piezoelectric body layer 70 polarization characteristic the trend of reduction is arranged.By forming upper electrode film 80, can obtain the electrical characteristics of piezoelectric body layer 70 and all good piezoelectric element 300 of cohesive of upper electrode film 80 with above-mentioned condition.In addition, as long as resistivity is 2.0 (* 10
-7Ω m) following getting final product has no particular limits its lower limit.Be preferably 1.59 (* 10
-7Ω m) more than.
And this upper electrode film 80 membranous is improved and its surface becomes and do not have concavo-convex level and smooth surface in fact, therefore can form the uniform dielectric film 95 of thickness well on this upper electrode film 80, consequently prevented peeling off of dielectric film 95.Therefore, can obtain all good actuator devices of placement property and durability, and can realize can the good printing quality of long term maintenance ink jet recording head.
Here, having made with the membrance casting condition shown in the following table 1 comes film forming as the embodiment 1～8 of the Ir film of upper electrode film and the actuator devices of comparative example 1～15, the upper electrode film of actuator devices of measuring this each embodiment and comparative example is at the stress of maximum warp direction, and estimates the displacement of actuator devices and the bonding force between upper electrode film (TE) and the piezoelectric body layer.Following table 1 shows its result simultaneously.
In addition, if the displacement of actuator devices is about below 210 (nm), in the structure of aforesaid liquid injector head, will influence the ejection characteristic of ink.Therefore, above if the displacement of actuator is 210 (nm), be evaluated as " well "; When than 210 (nm) hours, be evaluated as " reduction " (bad).In addition, making the state of observing upper electrode film in the stage of actuator devices, according to upper electrode film have or not peel off and piezoelectric body layer and upper electrode film between have or not the space to estimate the power that is adjacent to of upper electrode film (TE) and piezoelectric body layer.That is,, be evaluated as " reduction " (bad) if there be above-mentioned peeling off and the space; If there is no, be evaluated as " well ".
[table 1]
| The Ir membrance casting condition | Ir resistivity (* 10 -7 Ω·m) | Maximum warp direction stress (GPa) | Displacement | The TE | |
| Embodiment | |||||
| 1 | 25℃、0.4Pa、30×10 3W/m 2 | 2.0 | 1.997 | Well | Well |
| |
100℃、0.4Pa、30×10 3W/m 2 | 2.0 | 1.828 | Well | Well |
| |
250℃、0.4Pa、30×10 3W/m 2 | 1.8 | 1.435 | Well | Well |
| |
250℃、0.4Pa、3×10 3W/m 2 | 1.6 | 0.396 | Well | Well |
| |
250℃、0.4Pa、7.5×10 3W/m 2 | 1.7 | 0.911 | Well | Well |
| |
250℃、0.4Pa、15×10 3W/m 2 | 1.7 | 1.349 | Well | Well |
| |
250℃、0.8Pa、30×10 3W/m 2 | 1.8 | 1.504 | Well | Well |
| |
250℃、1.5Pa、30×10 3W/m 2 | 1.8 | 1.483 | Well | Well |
| Comparative example 1 | 350℃、0.4Pa、3×10 3W/m 2 | 1.3 | -0.100 | Reduce | Well |
| Comparative example 2 | 350℃、0.4Pa、7.5×10 3W/m 2 | 1.4 | 0.156 | Reduce | Well |
| Comparative example 3 | 350℃、0.4Pa、15×10 3W/m 2 | 1.6 | 0.233 | Reduce | Well |
| Comparative example 4 | 350℃、0.4Pa、30×10 3W/m 2 | 1.6 | 0.631 | Reduce | Well |
| Comparative example 5 | 350℃、0.4Pa、60×10 3W/m 2 | 1.7 | 0.732 | Reduce | Well |
| Comparative example 6 | 250℃、3.0Pa、30×10 3W/m 2 | 1.9 | 1.362 | Well | Reduce |
| Comparative example 7 | 25℃、4.0Pa、3×10 3W/m 2 | 3.9 | -0.105 | Well | Reduce |
| Comparative example 8 | 100℃、4.0Pa、3×10 3W/m 2 | 2.8 | -0.549 | Well | Reduce |
| Comparative example 9 | 150℃、4.0Pa、3×10 3W/m 2 | 2.7 | -0.526 | Well | Reduce |
| Comparative example 10 | 250℃、4.0Pa、3×10 3W/m 2 | 1.3 | -0.738 | Well | Reduce |
| Comparative example 11 | 350℃、4.0Pa、3×10 3W/m 2 | 1.1 | -0.208 | Reduce | Reduce |
| Comparative example 12 | 25℃、4.0Pa、30×10 3W/m 2 | 2.1 | 2.232 | Well | Reduce |
| Comparative example 13 | 150℃、4.0Pa、30×10 3W/m 2 | 1.9 | 1.689 | Well | Reduce |
| Comparative example 14 | 250℃、4.0Pa、30×10 3W/m 2 | 1.8 | 1.277 | Well | Reduce |
| Comparative example 15 | 350℃、4.0Pa、30×10 3W/m 2 | 1.6 | 0.662 | Reduce | Reduce |
As above shown in the table 1, in the actuator devices of embodiment 1～8, the evaluation of displacement and TE bonding force is " well ", in the actuator devices of comparative example 1～15, at least one be evaluated as " reduction " in displacement or the TE bonding force.Can know clearly from this result,, can improve the cohesive between upper electrode film 80 and the piezoelectric body layer 70, thereby can prevent that upper electrode film 80 from peeling off, and can make piezoelectric body layer 70 keep excellent electric characteristics according to the present invention.
In addition, in following table 2, illustrated in the optional actuator devices from the actuator of above-mentioned each embodiment and comparative example (actuator devices of embodiment 4 and comparative example 2), as the investigation result of the residual polarization (2Pr) of the pzt thin film of piezoelectric body layer.In addition, in following table 2, show the displacement of Ir membrance casting condition, Ir stress, Ir resistivity and actuator devices simultaneously.In addition, Fig. 7 shows the B-H loop of the pzt thin film (piezoelectric body layer) of the actuator devices of embodiment and comparative example.
[table 2]
| The Ir membrance casting condition | Ir stress (Gpa) | Ir resistivity | The 2Pr of PZT film (μ C/cm 2) | Displacement | |
| Embodiment | 250℃、0.4Pa、 3×10 3W/m 2 | 0.396 | 1.592×10 -7 | 30 | Well (221nm) |
| Comparative example | 350℃、0.4Pa、 7.5×10 3W/m 2 | 0.156 | 1.449×10 -7 | 7 | Reduce (200nm) |
As above shown in the table 2, in the actuator devices of embodiment, the displacement of residual polarization of pzt thin film (2Pr) and actuator all demonstrates good value, but in the actuator devices of comparative example, this value is compared equal step-down with the actuator devices of embodiment.In addition, from the B-H loop of pzt thin film shown in Figure 7 also as can be known, compare with comparative example, the polarization intensity of the actuator devices of embodiment is bigger.
The sputtering pressure of embodiment shown in the above-mentioned table 2 (Pa) is 0.4 (Pa), can certainly make sputtering pressure in the scope of 0.4～1.5 (Pa).In addition, temperature is 250 ℃, as long as but be 25～250 ℃.Thus, can guarantee to make the height of numeric ratio comparative example of the residual polarization (2Pr) of pzt thin film.
In addition, the material of upper electrode film 80 can use iridium (Ir).As the concrete mode of upper electrode film 80, be not limited to mode by individual layer iridium (Ir) formation, also can be the mode that constitutes by the alloy-layer that with iridium (Ir) main component.In addition, also can be at iridium (Ir) layer or with iridium (Ir) on the surface of an opposite side on surface alloy-layer, that contact with piezoelectric body layer 70 of main component lamination other layer form upper electrode film 80.
(other embodiments)
Embodiments of the present invention more than have been described, but have the invention is not restricted to above-mentioned embodiment.
In addition, the ink jet recording head of this each embodiment constitutes the part of the head unit with the ink flow path that is communicated with print cartridge etc. and is installed in the inkjet recording device.Fig. 8 is the sketch that an example of this inkjet recording device is shown.As shown in Figure 8, head unit 1A and 1B with ink jet recording head releasably are arranged on the print cartridge 2A and 2B that constitutes the ink feed unit, the carriage 3 that is mounted with this head unit 1A and 1B can be arranged on the bracket axle 5 with moving freely vertically, and this bracket axle 5 is installed on the apparatus main body 4.This head unit 1A and 1B for example spray black ink constituent and color inks constituent respectively.
And the driving force of CD-ROM drive motor 6 is by not shown a plurality of gears and be with 7 to reach carriage 3 synchronously, and the carriage 3 that is mounted with head unit 1A and 1B thus moves along bracket axle 5.On the other hand, be provided with platen 8, on platen 8, transmit the record sheet S as recording medium such as the paper carried by not shown intake roller etc. at apparatus main body 4 upper edge bracket axles 5.
In the above-described first embodiment, the ink jet recording head as an example of jet head liquid has been described, but the present invention is an object with all jet head liquids widely, certainly also applicable to the jet head liquid that sprays ink droplet liquid in addition.As other jet head liquid, for example can list: be used for the various record heads of image recording structure such as printer, the pigment injector head that is used to make the colour filter of LCD etc., the electrode material injector head that is used to form the electrode of OLED display and FED (face active display) etc., the biological organic matter that is used to make biochip and spray first-class.Beyond any doubt, the invention is not restricted to be used for the actuator devices of jet head liquid, for example, also applicable to the actuator devices that is loaded on other any devices such as sensor.
Claims (6)
1. the manufacture method of an actuator devices,
Have: the step that on substrate, forms oscillating plate; And the step that on this oscillating plate, forms the piezoelectric element that constitutes by bottom electrode, piezoelectric body layer and top electrode; It is characterized in that,
In the step that forms described piezoelectric element, on described piezoelectric body layer, form described top electrode by sputtering method, making temperature when carrying out sputter is that 25～250 ℃, pressure are 0.4～1.5Pa, and thus, formation thickness is that 30～100nm, stress are that 0.3～2.0GPa and resistivity are 2.0 * 10
-7The described top electrode that Ω m is following.
2. the manufacture method of actuator devices as claimed in claim 1 is characterized in that, making the power density when forming described top electrode is 3～30 * 10
3W/m
2
3. the manufacture method of actuator devices as claimed in claim 1 is characterized in that, uses iridium Ir to be used as the material of described top electrode.
4. an actuator devices is characterized in that, described actuator devices is made by the described manufacture method of claim 1.
5. a jet head liquid is characterized in that, described jet head liquid has the described actuator devices of claim 4.
6. a liquid injection apparatus is characterized in that, described liquid injection apparatus has the described jet head liquid of claim 5.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005230792 | 2005-08-09 | ||
| JP2005230792 | 2005-08-09 | ||
| JP2006192068 | 2006-07-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1911665A CN1911665A (en) | 2007-02-14 |
| CN100478179C true CN100478179C (en) | 2009-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101097300A Expired - Fee Related CN100478179C (en) | 2005-08-09 | 2006-08-09 | Actuator device, method for producing same, liquid-jet head and liquid-jet apparatus |
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| CN (1) | CN100478179C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5585768B2 (en) * | 2010-04-14 | 2014-09-10 | セイコーエプソン株式会社 | Liquid ejecting head, liquid ejecting apparatus, and piezoelectric element |
| JP6333586B2 (en) * | 2014-03-12 | 2018-05-30 | エスアイアイ・プリンテック株式会社 | Liquid ejecting head and liquid ejecting apparatus |
| JP6776554B2 (en) * | 2016-03-02 | 2020-10-28 | セイコーエプソン株式会社 | Piezoelectric devices, MEMS devices, liquid injection heads and liquid injection devices |
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| CN1911665A (en) | 2007-02-14 |
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