CN100477312C - Thermal switching element and method for manufacturing the same - Google Patents
Thermal switching element and method for manufacturing the same Download PDFInfo
- Publication number
- CN100477312C CN100477312C CNB2004800033512A CN200480003351A CN100477312C CN 100477312 C CN100477312 C CN 100477312C CN B2004800033512 A CNB2004800033512 A CN B2004800033512A CN 200480003351 A CN200480003351 A CN 200480003351A CN 100477312 C CN100477312 C CN 100477312C
- Authority
- CN
- China
- Prior art keywords
- electrode
- switching element
- thermal switching
- energy
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title description 113
- 238000004519 manufacturing process Methods 0.000 title description 30
- 239000000463 material Substances 0.000 claims abstract description 96
- 230000007704 transition Effects 0.000 claims abstract description 10
- 230000009466 transformation Effects 0.000 claims description 135
- 239000012212 insulator Substances 0.000 claims description 113
- 239000002784 hot electron Substances 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 7
- 230000005012 migration Effects 0.000 claims description 4
- 238000013508 migration Methods 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 13
- 230000008859 change Effects 0.000 description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
- 230000005540 biological transmission Effects 0.000 description 35
- 229910002367 SrTiO Inorganic materials 0.000 description 27
- 239000010410 layer Substances 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 26
- 239000000499 gel Substances 0.000 description 25
- 239000000377 silicon dioxide Substances 0.000 description 24
- 230000004907 flux Effects 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 238000006073 displacement reaction Methods 0.000 description 18
- 239000011159 matrix material Substances 0.000 description 18
- 238000001035 drying Methods 0.000 description 17
- 239000002904 solvent Substances 0.000 description 17
- 229920002521 macromolecule Polymers 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 15
- 238000003475 lamination Methods 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 15
- 239000012298 atmosphere Substances 0.000 description 14
- 229910052746 lanthanum Inorganic materials 0.000 description 14
- 238000009413 insulation Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910052712 strontium Inorganic materials 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 12
- 239000012071 phase Substances 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 11
- 238000011835 investigation Methods 0.000 description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 10
- 229910052779 Neodymium Inorganic materials 0.000 description 10
- 229910052791 calcium Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910052742 iron Inorganic materials 0.000 description 10
- 229910052772 Samarium Inorganic materials 0.000 description 9
- 229910004121 SrRuO Inorganic materials 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 9
- 238000001816 cooling Methods 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000000352 supercritical drying Methods 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 229910052692 Dysprosium Inorganic materials 0.000 description 7
- 229910052691 Erbium Inorganic materials 0.000 description 7
- 229910052693 Europium Inorganic materials 0.000 description 7
- 229910052688 Gadolinium Inorganic materials 0.000 description 7
- 229910052689 Holmium Inorganic materials 0.000 description 7
- 229910052777 Praseodymium Inorganic materials 0.000 description 7
- -1 SrMnO 3 Inorganic materials 0.000 description 7
- 229910052771 Terbium Inorganic materials 0.000 description 7
- 229910052788 barium Inorganic materials 0.000 description 7
- 210000000988 bone and bone Anatomy 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000008602 contraction Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052748 manganese Inorganic materials 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 210000002706 plastid Anatomy 0.000 description 6
- 239000007790 solid phase Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052775 Thulium Inorganic materials 0.000 description 5
- 229910052769 Ytterbium Inorganic materials 0.000 description 5
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052720 vanadium Inorganic materials 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 4
- 235000011613 Pinus brutia Nutrition 0.000 description 4
- 241000018646 Pinus brutia Species 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004378 air conditioning Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 239000002274 desiccant Substances 0.000 description 3
- 238000005485 electric heating Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000012782 phase change material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910018279 LaSrMnO Inorganic materials 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 229910017976 MgO 4 Inorganic materials 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000011194 food seasoning agent Nutrition 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- PSFDQSOCUJVVGF-UHFFFAOYSA-N harman Chemical compound C12=CC=CC=C2NC2=C1C=CN=C2C PSFDQSOCUJVVGF-UHFFFAOYSA-N 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000004034 viscosity adjusting agent Substances 0.000 description 2
- MHPUGCYGQWGLJL-UHFFFAOYSA-N 5-methyl-hexanoic acid Chemical compound CC(C)CCCC(O)=O MHPUGCYGQWGLJL-UHFFFAOYSA-N 0.000 description 1
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- 229910016455 AlBN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910018921 CoO 3 Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910005793 GeO 2 Inorganic materials 0.000 description 1
- 229910005872 GeSb Inorganic materials 0.000 description 1
- 229910005866 GeSe Inorganic materials 0.000 description 1
- 229910005868 GeSeTe Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 239000001828 Gelatine Substances 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910006913 SnSb Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 229910004284 Te81Ge15Sb2S2 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910009580 YMnO Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- PWKWDCOTNGQLID-UHFFFAOYSA-N [N].[Ar] Chemical compound [N].[Ar] PWKWDCOTNGQLID-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000002772 conduction electron Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052949 galena Inorganic materials 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004845 hydriding Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000004665 trialkylsilyl group Chemical group 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
Landscapes
- Semiconductor Memories (AREA)
Abstract
A heat switching device which has a completely different structure from those of conventional heat switching devices and is capable of controlling heat transfer through application of energy is disclosed. The heat switching device comprises a first electrode (2a), a second electrode (2b), and a transition body (3) arranged between the first electrode (2a) and the second electrode (2b). The transition body (3) contains a material which undergoes an electron phase transition when energy is applied. Consequently, the heat conductivity between the first electrode (2a) and the second electrode (2b) is changed by applying energy to the transition body (3).
Description
Technical field
The present invention relates to control the thermal switching element and the manufacture method thereof of hot transmission.
Background technology
If have the thermal switching element of the transmission that can control heat, then said elements can be applied to various fields.For example, also thermal switching element can be applied to field, at this moment, also said elements can be called cooling element as the cooling technology of technology from heat to specific direction that transmit.
Existing cooling technology roughly is divided into the technology of the compression that utilizes cold-producing medium and expansion cycles and utilizes technology two classes of pyroelectric phenomena.In the situation of utilizing the compression of cold-producing medium, expansion cycles, mainly compressor is used for the compression of cold-producing medium.This technology is because have remarkable efficient through the improvement of for many years Compressor Technology etc., so also be widely used in the civil equipment of refrigerator, refrigerator, air-conditioning etc.But cold-producing medium much uses fluorine Lyons, is scolded having problems aspect environmental characteristics at it.Now, discussing substitute beyond fluorine Lyons, but also do not developing cold-producing medium material now by compression, expansion cycles is expressed or heat transfer characteristic more than it equal with fluorine Lyons as cold-producing medium.
On the other hand, the element (thermoelectric element) that utilizes pyroelectric phenomena is the element of realizing cooling without cold-producing medium, and is not only very superior to the environmental characteristics aspect, so and because do not need the structure of machinery to have can to realize to exempt the characteristic of the brilliance of maintenance etc.As this thermoelectric element, pal card (peltier) element is representational.But efficient is low in present technology, except part exception, can not be applied in refrigerator and the air-conditioning etc.For example, when using cold-producing medium, the Carnot efficiency in the serviceability temperature of refrigerator etc. (for example ,-25 ℃～25 ℃ scope) is greatly in 30%～50% scope, but the efficient of peltier-element is but less than 10%.In addition, the electric heating element likely beyond the peltier-element does not also develop.
Therefore, people are seeking and can carry out heat transfer and the thermal switching element different with existing thermoelectric element without cold-producing mediums such as fluorine Lyons.
In addition, also can be by thermal switching element and heat conductor, heat guard, heater etc. are combined, realize having with circuit element similarly construct, the hot solids circuit element of function etc.In order to control the transmission of heat, need carry out active control to the electronics that transmits heat.But in existing thermoelectric element, active Electronic Control is difficult.For example, pyroelectric phenomena can be thought of as and in material, be accompanied by the phenomenon that heat that the drift conduction electron produces moves.For the characteristic (pyroelecthc properties) of thermoelectric element, generally use thermoelectric index ZT to represent, the efficient of the big more element of ZT is high more.Thermoelectric index ZT is by formula S
2(S: thermoelectric power, T: absolute temperature, κ: pyroconductivity, ρ: resistivity) represented value, the transmission characteristic of the electronics in the expression element has very big contribution to pyroelecthc properties to T/ κ ρ.Thereby we will consider the influence that the electron density etc. in the element gives the pyroelecthc properties of element, but the transmission characteristic that will actively control electronics in existing electric heating elements such as peltier-element is difficult.
Summary of the invention
The present invention is in view of this situation proposes, and the object of the present invention is to provide a kind ofly by having and existing diverse formation, can control the thermal switching element and the manufacture method thereof of the transmission of heat.
Thermal switching element of the present invention be comprise first electrode, second electrode and be configured in above-mentioned first electrode and above-mentioned second electrode between the transformation body, above-mentioned transformation body comprises by applying energy and carries out the material that electronics changes mutually, by above-mentioned energy is applied on the above-mentioned transformation body, the element that the pyroconductivity between above-mentioned first electrode and above-mentioned second electrode is changed.
Below, the manufacture method of thermal switching element of the present invention be this thermal switching element comprise first electrode, second electrode, be configured in the transformation body between above-mentioned first electrode and above-mentioned second electrode and be configured in above-mentioned transformation body and above-mentioned second electrode between insulator, above-mentioned transformation body comprises by applying energy and carries out the material that electronics changes mutually, above-mentioned insulator is a vacuum, by above-mentioned energy being applied on the above-mentioned transformation body, make the manufacture method of the thermal switching element that the pyroconductivity between above-mentioned first electrode and above-mentioned second electrode changes, comprise
(I) be configured on the predetermined interval by comprising the laminate and second electrode that change the body and first electrode in mode in the face of above-mentioned second electrode and above-mentioned transformation body, between above-mentioned second electrode and above-mentioned transformation body, form the space step and
(II) by making above-mentioned space keep vacuum, between above-mentioned second electrode and above-mentioned transformation body, form the step of insulator.
The manufacture method of thermal switching element of the present invention also can be described as the manufacture method of such thermal switching element, wherein, in the thermal switching element of the invention described above, also comprise insulator, above-mentioned insulator is configured between above-mentioned transformation body and above-mentioned second electrode, and above-mentioned insulator is a vacuum.
In addition, the manufacture method of thermal switching element of the present invention is the manufacture method of such thermal switching element, wherein, described thermal switching element comprises first electrode, second electrode, be configured in the transformation body between above-mentioned first electrode and above-mentioned second electrode, and be configured in insulator between above-mentioned transformation body and above-mentioned second electrode, above-mentioned transformation body comprises by applying energy and carries out the material that electronics changes mutually, above-mentioned insulator is a vacuum, by above-mentioned energy being applied on the above-mentioned transformation body, pyroconductivity between above-mentioned first electrode and above-mentioned second electrode is changed, and the manufacture method of described thermal switching element can also comprise
(i) by will changing body in mode and second electrode is configured on the predetermined interval in the face of above-mentioned second electrode and above-mentioned transformation body, and between above-mentioned second electrode and above-mentioned transformation body the step in formation space,
(ii) by making above-mentioned space keep vacuum, and between above-mentioned second electrode and above-mentioned transformation body, form insulator step and
(iii), dispose the step of above-mentioned first electrode above-mentioned transformation body is configured in the mode between above-mentioned second electrode and first electrode.
In addition, the manufacture method of thermal switching element of the present invention is a kind of like this manufacture method of thermal switching element, wherein, this thermal switching element comprises first electrode, second electrode, be configured in the transformation body between above-mentioned first electrode and above-mentioned second electrode, and be configured in insulator between above-mentioned transformation body and above-mentioned second electrode, above-mentioned transformation body comprises by applying energy and carries out the material that electronics changes mutually, above-mentioned insulator is a vacuum, by above-mentioned energy being applied on the above-mentioned transformation body, pyroconductivity between above-mentioned first electrode and above-mentioned second electrode is changed, the manufacture method of above-mentioned thermal switching element, comprise
(A) with first electrode, change body, comprise the intermediate of the material that destroys than the easier mechanics of above-mentioned transformation body ground and the order of second electrode, formation comprise their laminate step,
(B) destroy above-mentioned intermediate by extending above-mentioned laminate in the lamination direction of above-mentioned laminate, by removing above-mentioned ruinate intermediate, and between above-mentioned transformation body and above-mentioned second electrode, form the space step and
(C) pass through above-mentioned space is kept vacuum, and between above-mentioned second electrode and above-mentioned transformation body, form the step of insulator.
Description of drawings
Figure 1A and Figure 1B are the ideographs of an example of expression thermal switching element of the present invention.
Fig. 2 is the pattern sectional view of another example of expression thermal switching element of the present invention.
Fig. 3 is the ideograph of an example of the structure of the expression insulator that can be used in thermal switching element of the present invention.
Fig. 4 is the ideograph of another other example of expression thermal switching element of the present invention.
Fig. 5 is the ideograph that is illustrated in an example of the method that applies energy on the thermal switching element of the present invention.
Fig. 6 is the ideograph of another other example of expression thermal switching element of the present invention.
Fig. 7 A and 7B are the ideographs that is illustrated in another example of the method that applies energy on the thermal switching element of the present invention.
Fig. 8 A and Fig. 8 B are the ideographs of an example that expression can be used in the magnetic flux miter guide of thermal switching element of the present invention.
Fig. 9 is the ideograph that is illustrated in another other example of the method that applies energy on the thermal switching element of the present invention.
Figure 10 A and 10B are the ideographs that is illustrated in another other example of the method that applies energy on the thermal switching element of the present invention.
Figure 11 is the ideograph of another example that expression can be used in the magnetic flux miter guide of thermal switching element of the present invention.
Figure 12 A and 12B are the ideographs that is illustrated in another other example of the method that applies energy on the thermal switching element of the present invention.
Figure 13 is the ideograph that is illustrated in another other example of the method that applies energy on the thermal switching element of the present invention.
Figure 14 A and 14B are the ideographs that is illustrated in another other example of the method that applies energy on the thermal switching element of the present invention.
Figure 15 is the ideograph that is illustrated in another other example of the method that applies energy on the thermal switching element of the present invention.
Figure 16 is the ideograph that is illustrated in another other example of the method that applies energy on the thermal switching element of the present invention.
Figure 17 is the ideograph of an example of the manufacture method of expression thermal switching element of the present invention.
Figure 18 A～18D is the pattern process chart of another example of the manufacture method of expression thermal switching element of the present invention.
Figure 19 is the ideograph of another other example of expression thermal switching element of the present invention.
Figure 20 A～20E is the pattern process chart of an example of the manufacture method of expression thermal switching element shown in Figure 19.
Figure 21 is the ideograph of another other example of expression thermal switching element of the present invention.
Figure 22 is the ideograph of another other example of expression thermal switching element of the present invention.
Figure 23 is the ideograph of an example of the applying method of expression another other example of thermal switching element of the present invention and the energy in an above-mentioned example.
Figure 24 is the ideograph of another other example of expression thermal switching element of the present invention.
Embodiment
Below, in the reference accompanying drawing, embodiments of the present invention are described.Wherein, in the execution mode below, the identical label of mark on identical part, and omission is to their repeat specification.
Figure 1A and Figure 1B represent an example of thermal switching element of the present invention.Thermal switching element 1 shown in Figure 1A and Figure 1B comprise electrode 2a, electrode 2b and be configured in electrode 2a and electrode 2b between transformation body 3.Change body 3 and comprise by applying energy and carry out the material that electronics changes mutually (below, be called " phase change materials " simply), change on the body 3, the pyroconductivity between electrode 2a and the electrode 2b is changed by energy is applied to.Changing body 3 is media of conduction heat, and the effect of taking on the control volume of controlling heat transfer.According to this formation, can form the thermal switching element 1 that to control heat transfer by applying energy.In addition, in thermal switching element 1 of the present invention, can be without the cold-producing medium control heat transfer in fluorine Lyons etc.And, compare with situation as the peltier-element of existing electric heating element, can raise the efficiency, also can reduce energy consumption as the thermal device integral body of forming thermal switching element of the present invention.Wherein, Figure 1A is the pattern sectional view that is cut off the thermal switching element 1 shown in Figure 1B by the plane A shown in Figure 1B.
In thermal switching element 1 of the present invention, energy is applied to the not special qualification of the change shape that changes the pyroconductivity on the body 3 to being accompanied by.For example, both can form by energy is applied to and changed on the body 3, and make ratio of specific heat apply easier state before the above-mentioned energy, also can form the state that makes heat be difficult to move through moving between pair of electrodes 2a and the electrode 2b.In other words, when the state that heat is moved between relatively easily through electrode 2a in the thermal switching element 1 and electrode 2b (promptly, the hot mobile phase that changes body 3 inside is to being easy to state) as ON (connection) state, heat relatively is difficult to through state mobile between electrode 2a and the electrode 2b (promptly, change the state of the hot mobile phase of body 3 inside to difficulty) during as OFF (disconnection) state, by being applied to, energy changes on the body 3, then both can make thermal switching element 1 become the ON state, and also can make thermal switching element 1 become the OFF state.Wherein, in above-mentioned OFF state, preferably make above-mentioned pyroconductivity as much as possible little.In addition, it both can be linear following energy is applied to the electrode 2a and the variation of the pyroconductivity between the electrode 2b that change on the body 3, also can be non-linear.For example, both can there be the threshold value that applies energy of the variation that makes pyroconductivity, also can be for changing the energy that applies on the body 3, the variation of pyroconductivity has hysteresis.The form of the variation of these pyroconductivities for example, can be regulated by the phase change materials of selecting transformation body 3 to comprise.Wherein, in this manual, to being easy to state as the ON state in the thermal switching element, above-mentioned hot mobile phase is to the state of the difficulty OFF state as thermal switching element with above-mentioned hot mobile phase.
Here, so-called electronics changes mutually to refer to having or not structure and changes the transformation mutually that the electronic state in (for example, the material structures such as variation from the solid to liquid change transformation mutually) no related substance itself changes mutually.Therefore, transformation body 3 also be we can say and is comprised by applying the material that energy changes electronic state.In thermal switching element 1 of the present invention, can control the transmission of heat by the variation that changes the electronic state in the body 3.
Generally, the heat conduction of solid matter is represented by the composition of phonon contribution and the composition sum of electrical conductivity contribution.For the composition of phonon contribution, be to be called the hot composition that causes conduction by the lattice vibration of material, also the easiness of this conduction can be called the lattice pyroconductivity.For the composition of electrical conductivity contribution, be to be called by the electronics that comprises in the material to move and cause and the hot composition of conduction also the easiness of this conduction can be called the electronics pyroconductivity.Because it is the transformation mutually that is accompanied by the variation of the electronic state in the material that electronics changes mutually, be to make at least by applying energy to change the element that the electronics pyroconductivity in the body 3 changes so thermal switching element of the present invention 1 can be called.Be accompanied by the variation of the electronics pyroconductivity of the transformation body 3 that applies energy by these, and can control electrode 2a and electrode 2b between heat transfer.
As the example that this electronics changes mutually, can enumerate insulator-metallic transition.That is, in thermal switching element 1 of the present invention, also can make transformation body 3 carry out insulator-metallic transition by applying energy.It all is the metal phase that the transformation body 3 that is converted to metallic state not necessarily needs its integral body, changes body 3 and can partly comprise the metal phase.From viewpoint, when carrying out this transformation, preferably make the pyroconductivity when changing body 3 and being in insulator state as much as possible little as the characteristic of thermal switching element.In other words, preferably make the lattice pyroconductivity that changes body 3 as much as possible little.Wherein, even if carry out preferably making the lattice pyroconductivity that changes body 3 as much as possible little similarly in the situation that insulator-metallic transition changes changing body 3.
Like this, in thermal switching element 1 of the present invention, by applying energy changing on the body 3, and can control heat transfer through electronics.At this moment, consider that control is through thermionic heat transfer.In other words, make the state (state that heat is relatively easily moved through transformation body 3: the ON state), we can say that transformation body 3 is in the state that hot electron relatively easily moves that moves between hot relatively easily process electrode 2a and the electrode 2b.Make the hot state that relatively is difficult to move between process electrode 2a and the electrode 2b (make heat relatively be difficult to the state that moves through transformation body 3: the OFF state), to we can say that transformation body 3 is in the state of hot electron mobile phase to difficulty.We think in thermal switching element 1 of the present invention, and the variation of this hot electron mobile status is applied to the electronics that changes on the body 3 with energy and changes mutually and cause by being accompanied by.
Here, so-called hot electron refers to " being accompanied by the electronics that heat moves ".The electronics that flies out from its surface when generally, in a lot of situations, being called hot electron when heating of metal and semiconductor.Being not limited to above-mentioned general so-called hot electron by changing body 3 electrons transmitted in thermal switching element 1 of the present invention, can be to be accompanied by the electronics that heat moves.Thermal switching element of the present invention is to be configured between electrode by the transformation body that will apply energy control heat transfer first and to be used to change the element that the formation, configuration etc. of combination, each layer of material of each layer of body etc. can realize.
Thereby for example, we consider that the formation of the sort of superconducting switch shown in JP-01 (1989)-216582A and thermal switching element of the present invention is different fully.The state of the superconduction shown in JP-01 (1989)-216582A physically with the superflow state class seemingly, have desirable thermal insulation properties.Therefore, we think in the superconducting switch that discloses that it is difficult will carrying out heat transfer control possible in thermal switching element of the present invention in the above-mentioned example of quoting.In contrast, the transformation body 3 in thermal switching element 1 of the present invention is in the electronics mobile phase to being easy in the state, can be common conduction, promptly is not the state of superconduction.
In thermal switching element 1 of the present invention, there is no particular limitation to being applied to the energy that changes on the body 3.For example, can apply at least a energy of selecting from electric energy, luminous energy, mechanical energy, magnetic energy and heat energy.Can correspondingly suitably select to use which kind of energy with the kind that changes the phase change materials that comprises in the body 3.Wherein, both can on transformation body 3, apply multiple energy, also can apply above-mentioned multiple energy in this case simultaneously, and also can be provided with when needing and sequentially apply each energy.For example, also can after electric energy being applied on the transformation body 3, apply the energy of luminous energy, mechanical energy etc. again.There is no particular limitation to the method that applies each energy.
Apply electric energy changing on the body 3, for example, also can be undertaken by electronics or hole (hole) are injected into transformation body 3.In addition, also can be by in changing body 3, inducing electronics or the hole is carried out.In changing body 3, inject or induce electronics or hole, for example, can be undertaken, more particularly, for example, can be undertaken by between electrode 2a and electrode 2b, applying voltage by formation voltage difference between electrode 2a and electrode 2b.About other apply electric energy the time configuration example more specifically, the configuration example when applying other energy etc. will be stated in the back.
There is no particular limitation to the shape of thermal switching element 1, size etc., can correspondingly set arbitrarily with the characteristic that needs as thermal switching element 1.For example, shown in Figure 1A and Figure 1B, also can have the structure of electrode 2a, transformation body 3 and the electrode 2b of lamination stratiform.In situation with this lamination structure, the element area of thermal switching element 1, for example, 1 * 10
2Nm
2～1 * 10
2Cm
2Scope in.Wherein, the element area is the area of lamination direction (for example, the direction of the arrow B shown in Figure 1B) when watching element from each layer.
Now, transformation body 3 in the thermal switching element 1 is described.Change body 3, for example, the material shown in below can comprising as the material that changes mutually.
Change body 3, for example, also can comprise and have by formula A
xD
yO
zThe oxide of represented composition.Here, A is at least a element of selecting from alkali metal (Ia family), alkaline-earth metal (IIa family), Sc, Y and rare earth element (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er), and D is that (family of the element the specification of the present invention represents to carry out according to IUPAC (1970) at least a migration element of selecting from IIIa family, IVa family, Va family, VIa family, VIIa family, VIII family and Ib family.Represent that if carry out family then above-mentioned migration element becomes at least a migration element of selecting from 3 families, 4 families, 5 families, 6 families, 7 families, 8 families, 9 families, 10 families and 11 families) according to IUPAC (1970).O is an oxygen.Above-mentioned oxide generally has crystal structure, has element D basically and enters center among the born of the same parents of unit of corresponding crystal lattice, and a plurality of oxygen atoms are trapped among the structure around the atom that is in the center.
X, y, z so long as positive number just there is no particular limitation.Wherein, the numerical value of the combination shown in preferably having below satisfying can be divided into a plurality of classifications with above-mentioned oxide by this combination.Change body 3 also can comprise belong to below shown in oxide of all categories.X, y in belonging to oxide of all categories and the value of z not necessarily need be satisfy fully below institute's indicating value (comprising illustration), for example, also can be damaged a part of oxygen oxide, the also element beyond doped chemical A and the element D (for example, IIa～Vb family element etc.) on a small quantity.In addition, below shown in classification in technical field of the present invention, do not fix as technology general knowledge, be in order to understand easily the explanation of oxide, for convenience and the classification of setting.
-classification 1-
X, y and z are the numerical value that satisfies x=n+2, y=n+1 and z=3n+4.Here, n is 0,1,2 or 3.
In belonging to such other oxide, can enumerate, for example, Sr
2RuO
4(La, Sr)
2CoO
4Deng the xyz index be oxide, the Sr of (214)
3Ru
2O
7(La, Sr)
3Mn
2O
7Deng the xyz index be the oxide of (327).These oxides are oxides of the so-called Ruddlesden-Popper structure of expression.
In addition, when n=0, in the oxide of this classification, also can comprise element D is configured on the position of elements A, and/or, elements A is configured in the locational oxide of element D.For example, also can comprise and have by formula D
xA
yO
zThe expression composition oxide and have by formula D
xD
yO
zThe oxide of the composition of expression etc.More particularly, for example, also can comprise and have Mg
2TiO
4, Cr
2MgO
4, Al
2MgO
4Oxide, the Fe of the spinel-type structure of (the xyz index is (214)) etc.
2CoO
4, Fe
2FeO
4(that is Fe,
3O
4) oxide (the xyz index is (214)) etc. of the not containing element A that waits.
-classification 2-
X, y and z are the numerical value that satisfies x=n+1, y=n+1 and z=3n+5.Here, n is 1,2,3 or 4.In belonging to such other oxide, can enumerate, for example, partly have embedding (intercalation) oxide of oxygen.
-classification 3-
X, y and z are the numerical value that satisfies x=n, y=n and z=3n.Here, n is 1,2 or 3.In belonging to such other oxide, when n=1, can enumerate, for example, have SrTiO
3, BaTiO
3, KNbO
3, LiNbO
3, SrMnO
3, SrRuO
3Deng the oxide of perovskite (perovskite) type structure.In addition, when n=2, can enumerate, for example, Sr
2FeMoO
6, SmBaMn
2O
6Deng the xyz index be the oxide of (226).
-classification 4-
X, y and z are the numerical value that satisfies x=n+1, y=n and z=4n+1.Here, n is 1 or 2.In belonging to such other oxide, when n=1, can enumerate, for example, Al
2TiO
5, Y
2MoO
5Deng the xyz index be the oxide of (215).In addition, when n=2, can enumerate, for example, SrBi
2Ta
2O
9Deng oxide.
-classification 5-
X, y and z are the numerical value that satisfies x=0 or 1, y=0 or 1, z=1.Here, a certain side who selects from x and y is 0.In belonging to such other oxide, can enumerate, for example, BeO, MgO, BaO, CaO, NiO, MnO, CoO, CuO, ZnO etc.
-classification 6-
X and y satisfy x=0,1 or 2, y=0,1 or 2 numerical value.Here, a certain side who selects from x and y is 0, and z adds 1 value for when x is 0 on the value of y, when y is 0, add 1 value on the value of x.In belonging to such other oxide, can enumerate, for example, TiO
2, VO
2, MnO
2, GeO
2, CeO
2, PrO
2, SnO
2, Al
2O
3, V
2O
3, Ce
2O
3, Nd
2O
3, Ti
2O
3, Sc
2O
3, La
2O
3Deng.
-other classification-
For example, when x=0 or 2, y=0 or 2 and during z=5, can enumerate Nb
2O
5, V
2O
5, Ta
2O
5Deng oxide.But a certain side who selects from x and y is 0.
In addition, change body 3 and also can comprise strong correlation Department of Electronics material.For example, also can comprise the pattern insulator.
In addition, change body 3 and also can comprise magnetic semiconductor.In the semiconductor of the mother metal that constitutes magnetic semiconductor, for example, can use compound semiconductor.Specifically, for example, can be with GaAs, GaSe, AlAs, InAs, AlP, AlSb, GaP, GaSb, InP, InSb, In
2Te
3, ZnO, ZnS, ZnSe, ZnTe, CdSe, CdTe, CdSb, HgS, HgSe, HgTe, SiC, GeSe, PbS, Bi
2Te
3, Sb
2Se
3, Mg
2Si, Mn
2Sn, Mg
3Sb
2, TiO
2, CuInSe
2, CuHgIn
4, ZnIn
2Se
4, CdSnAs
2, AgInTe
2, AgSbSe
2, GaN, AlN, GaAlN, BN, AlBN, GaInNAs etc. I-V family, I-VI family, II-IV family, II-V family, II-VI family, III-V family, III-VI family, IV-IV family, I-III-VI family, I-V-VI family, II-III-VI family, II-IV-V compound semiconductor as mother metal, in these compound semiconductors, add the magnetic semiconductor of at least a element of selecting from Iva family～VIII family and IVb family.
Perhaps, also can be with having by formula Q
1Q
2Q
3The magnetic semiconductor of the composition of expression.Here, Q
1Be at least a element of selecting from Sc, Y and rare earth element (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er), Ti, Zr, Hf, V, Nb, Ta, Cr, Ni and Zn, Q
2It is at least a element of selecting from V, Cr, Mn, Fe, Co and Ni.Q
3It is at least a element of selecting from C, N, O, F and S.Element Q
1, element Q
2With element Q
3Ratio of components there is no particular limitation.
Perhaps, also can be with having by formula R
1R
2R
3The magnetic semiconductor of the composition of expression.Here, R
1Be at least a element of selecting from B, Al, Ga and In, R
2It is at least a element of selecting from N and P.R
3It is at least a element of selecting from IVa family～VIII family and IVb family.Element R
1, element R
2With element R
3Ratio of components there is no particular limitation.
Perhaps, also can be with having by formula ZnOR
3The magnetic semiconductor of the composition of expression.Here, R
3Be above-mentioned element R
3, Zn is a zinc, O is an oxygen.Zn, O and element R
3Ratio of components there is no particular limitation.
Perhaps, also can be with having by formula TOR
3The magnetic semiconductor of the composition of expression.Here, T is at least a element of selecting from Ti, Zr, V, Nb, Fe, Ni, Al, In and Sn, R
3Be above-mentioned element R
3, O is an oxygen.Element T, O and element R
3Ratio of components there is no particular limitation.
In addition, change body 3 and also can comprise the material that carries out magnetic-ferromagnetism transformation by the electric field that gives from the outside.For example, can use La (Fe, Si) and FeRh etc.At this moment, can be by applying electric energy on the body 3 and carry out electronics and change mutually changing.
In addition, when applying heat energy on the body 3 and carry out electronics when changing mutually, for example, also can comprise GaSb, InSb, InSe, Sb by changing
2Te
3, GeTe, Ge
2Sb
2Te
5, InSbTe, GeSeTe, SnSb
2Te
4, InSbGe, AgInSbTe, (Ge, Sn) SbTe, GeSb (Se, Te), Te
81Ge
15Sb
2S
2Deng.
There is no particular limitation to the shape that changes body, size etc., can correspondingly set arbitrarily with the characteristic that needs as thermal switching element 1.In the situation of the transformation body 3 that is depicted as stratiform as Figure 1A and Figure 1B, change the thickness of body 3.For example, in the scope of 0.3nm～100 μ m.Preferably in the scope of 0.3nm～1 μ m.The area (for example, the area of seeing from the direction of the arrow B shown in Figure 1B) that changes body 3 can correspondingly be set arbitrarily with the element area that needs as thermal switching element 1.In addition, change body 3, also can a plurality of layers of lamination, the thickness of each layer, contained material etc. can with correspondingly set arbitrarily as the characteristic that changes body 3 and need.
Then there is no particular limitation if having the material of conductivity to be used for the material of electrode 2a and 2b.For example, can specifically for example, can use Cu, Al, Ag, Au, Pt, TiN etc. with the material of line resistance rate below 100 μ Ω cm.Also can use semi-conducting material when needing in addition.When using semi-conducting material, the material that work function is little is gratifying.In addition, also there is no particular limitation for the shape of electrode 2a and 2b, size etc., can correspondingly set arbitrarily with the characteristic that needs as thermal switching element 1.
Below, the configuration example of thermal switching element of the present invention is described.
Fig. 2 is the pattern sectional view of another example of expression thermal switching element of the present invention.
The heat conduction of the transformation body 3 in the thermal conductivity ratio OFF state of insulator 4 (if carry out the transformation body 3 of insulator-metallic transition, then being the transformation body 3 in the insulator state for example) is forthright to be gratifying for a short time.Can form the higher thermal switching element of efficient 1.
In the thermal switching element 1 that has disposed insulator 4, the gap current potential of responding to through the electronics (hot electron) that conducts between electrode 2a and the electrode 2b is accompanied by the situation that the electronics that changes body 3 changes the big variation of generation mutually as shown in Figure 2 in consideration.For example, to being easy in the ON state (for example, if carry out the transformation body 3 of insulator-metallic transition, then being in the state that comprises the metal phase), hot electron is from being transmitted to electrode 2b in the face of the end that changes the insulator 4 the body 3 through insulator 4 in hot mobile phase.From guaranteeing the viewpoint of hot electron conduction at this moment, the thickness of insulator 4, for example, can the scope below 50nm in, further, be preferably in the following scope of 15nm from the viewpoint of the efficiency of transmission of heat.Wherein, there is no particular limitation to the lower limit of the thickness of insulator 4, for example, can get final product more than 0.3nm.Wherein, there is no particular limitation to the shape of insulator 4, can correspondingly with the shape that changes body 3 and electrode 2b etc. at random set.
In the thermal switching element 1 that has disposed insulator 4, hot electron is crossed insulator 4 and is transferred to electrode 2b from electrode 2a (perhaps from changing body 3).At this moment, we think hot electron by tunnel transmission and ballistic transport, and so-called thermionic (thermionic) transmission waits through insulator 4, and is transferred to electrode 2b.The method of transmission is with to be used for the material of insulator 4, the thickness of insulator 4 (that is, above-mentioned gap current potential) etc. relevant and different.In other words, for example, be used for the material of insulator 4 and the thickness of insulator 4, method that also can control transmission by control.
As insulator 4, for example, also can use vacuum.When using vacuum, the formation of element is oversimplified as insulator 4.We will narrate the creating method that uses the thermal switching element of vacuum as insulator 4 in the back.In addition, so-called vacuum can be that for example, about 1Pa is with the atmosphere of downforce.In addition, when using vacuum, can think thermionic basically transmission hot electron as insulator 4.Relevant with the thickness of insulator 4, also can consider to exist the hot electron of tunnel transmission.
In addition, as insulator 4, for example, also can be with the general solid, shaped insulating material of the pottery of oxide etc. and resin etc.At this moment, as insulator 4, it is gratifying using the insulator that is in amorphous or microcrystalline state.Wherein, the microcrystalline state in this specification refers to the crystal grain of average crystal diameter below 10nm and is dispersed in state in the amorphous matrix.When using the insulator of solid, shaped, forming insulator 4 is gratifying as tunnel insulator.When insulator 4 was tunnel insulator, the hot electron tunnel transmission that makes transmission heat was through insulator 4.In order to form tunnel insulator, for example, generally can be with material with tunnel insulating properties.More particularly, for example, can use oxide, nitride, oxynitride of Al, Mg etc. etc.The thickness of the insulator 4 during as tunnel insulator, for example, in the scope of 0.5nm～50nm, preferably in the scope of 1nm～20nm.
In addition, as insulator 4, for example, also can use inorganic macromolecule material.As inorganic macromolecule material, for example, also can use silicate material and aluminosilicate material etc.An example in Fig. 3, having represented the structure of inorganic macromolecule material.As shown in Figure 3, the structure that the inorganic macromolecule material of silicate material and aluminosilicate material etc. has porous matter, one side is a solid, one side is that portion has countless hollow region 5 within it.Because the average diameter of hollow region 5 is littler than the distance of the average free engineering of air, the mobility of the gas in the inside of hollow region 5 is in fact very little, so inorganic macromolecule material is difficult to transmission heat.Therefore, also insulator 4 can be intactly be used as, but for example, by the filling pyroconductivity is little in hollow region 5 gas or make hollow region 5 form vacuum, the littler insulator of pyroconductivity 4 can be formed.
Now, illustrate in greater detail inorganic macromolecule material shown in Figure 3.Inorganic macromolecule material shown in Figure 3 comprises the mother metal 6 that forms whole bone lattice.Mother metal 6 is particles that average grain diameter is about several nm, by forming the bone lattice that three-dimensional grid forms porous matter structure.Inorganic macromolecule material, one side use the bone lattice that formed by mother metal 6 and keep shape as solid, simultaneously comprise the continuous hollow region 5 that countless average diameters is about several nm～tens of nm.Dispose the insulator 4 that constitutes by this porous matter as shown in Figure 2, when transformation body 3 is in the ON state, (also can make transformation body 3 be in the ON state by apply voltage between electrode 2a and electrode 2b) when applying voltage between electrode 2a and electrode 2b, electric field concentrates on the bone lattice part that is formed by mother metal 6.By concentrating of this electric field, and can be expeditiously from electrode or change body hot electron is supplied to the inside of insulator 4, the thermionic emission of supplying with is transmitted to the inside of insulator 4.Think that hot electron conduction at this moment mainly is to be undertaken by the transmission of trajectory.The effect that this electric field is concentrated is to construct the significant effect that becomes by making insulator 4 form how empty matter shown in Figure 3, the situation that does not have a how empty matter structure shown in Figure 3 with insulator 4 relatively can reduce the voltage that is applied in order to transmit hot electron between electrode 2a and the electrode 2b.
Wherein, in inorganic macromolecule material shown in Figure 3, consider that a part of hot electron of supplying with is formed the solid phase zone institute scattering of mother metal 6 grades of porous matter structure, degradedness.But, because the average of solid phase area size is about nm, so think the transmission that most hot electrons of supplying with can be used for heat.
In addition, inorganic macromolecule material shown in Figure 3 further comprises and has and the average diameter of hollow region 5 electronic emission material 7 with degree or the average grain diameter below it, with mother metal 6 ways of connecting with electronic emission material 7 decentralized configuration in inorganic macromolecule material.In the inorganic macromolecule material that comprises electronic emission material 7 like this, even if a part of hot electron is transferred to electronic emission material 7 by the hot electron with scattering and launches by the scattering of above-mentioned solid phase zone institute, and the transmission of the heat of can bearing the responsibility once more.About heat of emission electronics again by the solid phase zone once more the situation of scattering also be same.Therefore, can form the higher thermal switching element of efficient.Electronic emission material 7 is the little material of work function preferably, specifically, for example, the most handy material with carbon element, Cs compound, alkali earth metallic compound etc., its average grain diameter is in the scope of approximate number nm～tens of nm.In addition, " the e shown in Fig. 3
-" represent again the state of emitting electrons.
As insulator 4, be not limited to above-mentioned inorganic macromolecule material, also can be with having same hollow region, for example, the continuous emptying aperture or the insulating material of emptying aperture independently.Can access with the same effect of the situation of above-mentioned inorganic macromolecule material.The method shape that this insulating material can be used in the method for carrying out powder sintering behind the powder that becomes mother metal and chemical blowing, physical blowing, sol-gal process etc. forms.But, preferably have the emptying aperture of countless average grain diameters at approximate number nm～tens of nm.In addition, same with inorganic macromolecule material, also can comprise electronic emission material.Can access the effect same with the situation of inorganic macromolecule material.
Specifically, for example, the also desiccant gel that can make with sol-gal process.Above-mentioned desiccant gel is to have the bone lattice part that is made of at the particle of approximate number nm～tens of nm scopes average grain diameter and millimicron porous plastid of the continuous hollow region of average diameter below about 100nm.As the material of gel, for example, from concentrating the viewpoint of above-mentioned electric field expeditiously, semi-conducting material or insulating material are gratifying, wherein, and the most handy silica (silica).About stating in the back as manufacture method with the porous matter silica gel of the desiccant gel of silica.
Fig. 4 represents another other example of thermal switching element of the present invention.Thermal switching element 1 shown in Figure 4 further comprises electrode 8 for thermal switching element shown in Figure 2, and electrode 8 is configured between transformation body 3 and the insulator 4.By this formation, and can form the higher thermal switching element of efficient 1.
The material that is used for Fig. 8 can be same with the material that is used for above-mentioned electrode 2a and electrode 2b.Wherein, the material of the work function to vacuum level little (for example, 2eV is following) is gratifying.Specifically, for example, can use Cs compound and alkali earth metallic compound etc.When with this material, can supply with hot electron to insulator 4 more expeditiously.
There is no particular limitation for the shape of electrode 8, size etc., can correspondingly set arbitrarily with the characteristic that needs as thermal switching element 1.For example, in the situation of electrode 8 that is stratiform shown in Figure 4, its thickness, for example, from inferior millimicron magnitude in the scope of number μ m.
In addition, between each layer in Fig. 1, Fig. 2 and the thermal switching element 1 shown in Figure 4, also can further dispose other material when needing.
Below, the method that energy is applied to the transformation body in the thermal switching element of the present invention is described.
Fig. 5 is the ideograph that explanation is applied to electric energy an example of the method that changes body 3.As shown in Figure 5, further comprise the electrode 10 and the insulator 9 that energy are applied to transformation body 3, change between body 3 and the electrode 10, change on the body 3 and electric energy can be applied to by insulator 9 is configured in.Specifically, for example, can and change between the body 3 applying voltage Vg at electrode 10.By applying voltage Vg, for example, can in changing body 3, inject or induce electronics or hole, can on transformation body 3, apply energy.Intactly the to bear the responsibility transmission of heat of the electronics that injects or induce as hot electron.
Fig. 6 represents to comprise one example of the thermal switching element of structure shown in Figure 5.Thermal switching element 1 shown in Figure 6 for thermal switching element shown in Figure 41, further comprises insulator 9 and electrode 10.To dispose insulator 9 and electrode 10 by the mode that changes body 3 and electrode 10 clamping insulators 9.In addition, in the mode that current potential of electrode 2a and electrode 2b is not influenced, specifically so that with the direction that applies voltage Vg roughly with dispose insulator 9 and electrode 10 changing the vertical mode of the thermionic direction of body 3 conducted inside.In thermal switching element shown in Figure 61,, change mutually and can make transformation body 3 carry out electronics by between transformation body 3 and electrode 10, applying voltage Vg.In addition, in example shown in Figure 6, also can between electrode 10 and electrode 2a, apply voltage Vg.Wherein, in thermal switching element of the present invention, do not limit the method that applies voltage Vg is special.For example, the voltage applying unit and the thermal switching element of the present invention of difference configuration can be electrically connected.When in the circuit that thermal switching element of the present invention is packed into, voltage applying unit for example, also can comprise foregoing circuit.Other, as long as (for example potential difference can be given in thermal switching element of the present invention, will to apply between the zone of voltage, if example shown in Figure 6, then changing between body 3 and the electrode 10), just can at random set the method that applies voltage Vg, formation etc.
The material that is used for electrode 10 can be identical with the material that is used for above-mentioned electrode 2a and electrode 2b.In addition, be used for the material of insulator 9, if insulating material, then there is no particular limitation for semi-conducting material.For example, can be with from the element of IIa family～VIa family of comprising Mg, Ti, Zr, Hf, V, Nb, Ta and Cr with comprise at least a element that the element of IIb family～IVb family of group of the lanthanides (comprising La, Ce), Zn, B, Al, Ga and Si selects and the compound of at least a element selected from F, O, C, N and B.Specifically, for example, can use SiO
2, Al
2O
3, MgO etc., as semiconductor, can use ZnO, SrTiO
3, LaAlO
3, AlN, SiC etc.
There is no particular limitation to the shape of insulator 9, size etc., and for example, in being illustrated in figure 6 as the situation of stratiform, its thickness for example is in magnitude from inferior millimicron in the scope of number μ m.
Fig. 7 A and 7B are used to illustrate the ideograph that magnetic energy is applied to an example of the method that changes body 3.Fig. 7 A is identical with structure shown in Figure 5 with the structure shown in the 7B, but replacement applies voltage Vg, can produce magnetic fields 12 by flow through electric current 11 in electrode 10, the magnetic field 12 that produces is imported to change in the body 3 energy is applied on the transformation body 3.Wherein, the structure shown in Fig. 7 A and the 7B is the pattern sectional view that blocks equally with Figure 1A.
The thermal switching element that comprises the structure shown in Fig. 7 A and the 7B for example, can be the thermal switching element 1 with structure shown in Figure 6, replaces applying voltage Vg, can flow through electric current in electrode 10, the magnetic field that produces is imported to change in the body 3.By in electrode 10, flowing through electric current, change body 3 electronics and change mutually and can make.In addition, also can simultaneously or set sequentially to apply voltage Vg and in electrode 10, flow through electric current and produce magnetic field and import to and change in the body 3.Electric energy and magnetic energy can be applied on the transformation body 3.Wherein, in the time of on magnetic energy being applied to transformation body 3, the thickness of insulator 9 (also can be described as the distance of electrode 10 and transformation body 3) is in the scope of for example counting nm～number μ m.In addition, only otherwise make electrode 10 and change body 3 electrical shorts, also can not necessarily dispose insulator 9.For example, also can and changing body 3 with electrode 10, to be configured in the distance of leaving approximate number nm～number μ m last.
When magnetic energy being applied to when changing on the body 3, also can be that the magnetic flux miter guide and the electrode 10 that are focused at the magnetic field that produces on the electrode 10 are joined, perhaps, be configured in electrode 10 near.By configuration magnetic flux miter guide, can expeditiously magnetic field 12 be imported in the transformation body 3, form more high efficiency thermal switching element.
The shape of the magnetic flux miter guide of configuration, as long as can be focused at the magnetic field that produces on the electrode 10, just there is no particular limitation.Can with the characteristic that needs as thermal switching element, the requirement on the manufacture process etc. correspondingly, at random set.For example, shown in Fig. 8 A, the cross section when magnetic flux miter guide 13 and electrode 10 are combined both can be a rectangle, also can be to be platform shape shown in Fig. 8 B.Example shown in Fig. 8 B when being platform shape, because can flow through many more electric currents in the near more position of leaving as the object that imports magnetic field of transformation body 3, changes in the body 3 so can more expeditiously magnetic field be imported to like that.Wherein, in the example shown in Fig. 8 A and Fig. 8 B, form the shape that electrode 10 and magnetic flux miter guide 13 are closely contacted, but not necessarily need both are closely contacted.But, when both are closely contacted, can expeditiously magnetic field be imported in the transformation body 3.In addition, in Fig. 8 A and Fig. 8 B,, omitted the diagram of electrode 2a, electrode 2b etc. in order to understand explanation easily.Among the figure afterwards, also exist the same illustrated situation of omitting electrode 2a, electrode 2b etc.When reality is used as thermal switching element, electrode 2a and electrode 2b in addition, can be configured in electrode 8, insulator 4 etc. on the optional position when needed.
The material that is used for magnetic flux miter guide 13, as long as can be focused at the magnetic field that produces on the electrode 10, just there is no particular limitation, for example can use strong magnetic material.More specifically say, for example, can be with the non-retentive alloy film that comprises at least a element of selecting from Ni, Co and Fe.
In addition, not have excessive coercive force be gratifying to the strong magnetic material that is used for magnetic flux miter guide 13.When with the strong magnetic material with excessive coercive force during as the magnetic flux miter guide, exist because the magnetization of magnetic flux miter guide 13 self keeps having reduced and is applied to the controlled of the magnetic field that changes on the body 3, perhaps need unnecessary energy, and make possibility as the decrease in efficiency of thermal switching element because the direction of magnetization of magnetic flux miter guide 13 self is changed.
Fig. 9 represents magnetic energy is applied to another example of the method that changes body 3.Change on the body 3 for magnetic energy is applied to, also can form structure shown in Figure 9.In example shown in Figure 9,, can in the electrode 10 of facing the two sides (side C shown in Figure 9 and side D) that change body 3, flow through the opposite electric current of phase place with around the mode configured electrodes 10 that changes body 3.Therefore, can strengthen importing to the magnetic field that changes body 3, form more high efficiency thermal switching element.
Figure 10 A and 10B represent magnetic energy is applied to another other example of the method that changes body 3.In the example shown in Figure 10 A and the 10B,, further dispose magnetic flux miter guide 13 for example shown in Figure 9.In addition, only magnetic flux miter guide 13 is configured in as near the transformation body 3 of the object in importing magnetic field.At this moment, the coercive force that magnetic flux miter guide 13 is had does not unnecessarily increase, and can more expeditiously magnetic field be imported to change in the body 3.Wherein, Figure 10 B is the sectional view that blocks Figure 10 A in the C-D direction shown in Figure 10 A.
In addition, for magnetic flux miter guide 13 is configured in change body 3 near, as shown in figure 11, also can cut apart magnetic flux miter guide 13 and be configured.At this moment, can further suppress the increase of the coercive force that magnetic flux miter guide 13 has, and can more expeditiously magnetic field be imported to and change in the body 3.Wherein, example shown in Figure 11 is identical with the example shown in Figure 10 A and the 10B except magnetic flux miter guide 13.
Figure 12 A and 12B represent magnetic energy is applied to another other example of the method that changes body 3.In the example shown in Figure 12 A and the 12B, can more expeditiously magnetic field be imported transformation body 3.Wherein, it is gratifying changing the situation that body 3 reacts according to the magnetic field of vertical direction.
Figure 13 is the ideograph that expression is applied to luminous energy an example of the method that changes body 3.As shown in figure 13, change body 3, light 14 can be incided transformation body 3 for luminous energy is applied to.When light 14 being incided transformation body 3, shown in Figure 14 A, both light 14 can be directly incident on transformation body 3, also can through electrode 2a and/or electrode 2b light 14 be incided transformation body 3 as shown in Figure 14B.
Figure 15 is the ideograph that expression is applied to heat energy an example of the method that changes body 3.In example shown in Figure 15, heater 15 is configured in changes between body 3 and the electrode 10, in heater 15, flow through electric current and make heater 15 heatings by in electrode 10, flowing through electric current.By doing like this, heat energy can be applied to transformation body 3.Can be with by flowing through the material that electric current generates heat, for example resistive element etc. is used for heater 15.In addition, also can be when needing with other layer, for example, insulator is configured in heater 15 and changes between the body 3.
In addition, be not limited to example shown in Figure 15, there is no particular limitation to heat energy being applied to the method that changes body 3.For example, also can make its heating on the heater shown in Figure 10, heat energy is applied to changes on the body 3 by light or electric wave are radiated at.In addition, also can heat energy be applied on the transformation body 3 by make electrode 10 self-heatings by the electric current that flows through electrode 10.
Figure 16 is the ideograph that expression is applied to mechanical energy an example of the method that changes body 3.In example shown in Figure 16, displacement body 16 is configured between transformation body 3 and the electrode 10, make 16 distortion of displacement body by in electrode 10, flowing through electric current.That is,, a kind of pressure as mechanical energy can be applied to transformation body 3 by configuration displacement body 16.
For example, piezoelectric and magnetostrictive material can be used for displacement body 16.When displacement body 16 comprises piezoelectric, for example, the electric current that flows through electrode 10 can be imported to displacement body 16.When displacement body 16 comprises magnetostrictive material, for example, the magnetic field that is produced by the electric current that flows through electrode 10 can be imported to displacement body 16.
More than, illustrated energy is applied to the method that changes body 3, but as can see from above-mentioned explanation, in thermal switching element of the present invention, can be simultaneously or setting sequentially multiple different energy is applied on the transformation body 3.For example, electrode 10 can be used for applying of different types of energy.Also can be between each layer of Fig. 5～shown in Figure 17 when needing in addition, further other material of configuration.
In addition, as shown in Figure 2, in the thermal switching element 1 that has disposed insulator 4, by the material, thickness etc. of control insulator 4, and can make on the direction from electrode 2a to electrode 2b and the thermionic conductivity on the direction from electrode 2b to electrode 2a asymmetric.Therefore, can be formed in the element of certain orientation conduction heat, i.e. cooling element.In addition, in order to realize the heat conduction of certain orientation, need make transformation body 3 be in the ON state.
Below, we illustrate the manufacture method of thermal switching element of the present invention.
In order to form each layer that constitutes thermal switching element, can form technology with general film, the various sputtering methods of for example, pulse laser coating by vaporization (PLD), ion beam coating by vaporization (IBD), ion bunch and RF, DC, electron cyclotron resonance (ECR), helium inductively coupled plasma (ICP), opposed target etc., molecular line epitaxial growth method (MBE), ion plating etc.In addition, except these PVD methods, also can use CVD method, galvanoplastic or sol-gal process.When needs carry out microfabrication, the general gimmick of using in semiconductor technology and magnetic head manufacture craft etc. can be combined.Specifically, for example, can will combine with the photoetching technique of the physics of ion milling, reactive ion etching (RIE), FIB (Focused Ion Beam (focused ion beam)) etc. or the etching method of chemistry, the staging that is used to form fine pattern, electron beam (EB) method etc. etc.In order to make the flattening surface of each layers such as electrode, for example, can use CMP (Chemo-Mechanical Polishing (chemical-mechanical polishing)) and ion bunch etching etc.In addition, when forming each layer, also can be formed on the matrix.There is no particular limitation to the material that is used for matrix, for example, can use Si and SiO
2Or GaAs and SrTiO
3Deng oxide monocrystal etc.
As shown in Figure 2, represented further between transformation body 3 and electrode 2b, to comprise insulator 4, and insulator 4 is manufacture methods of the thermal switching element 1 of vacuum.In the manufacture method of this thermal switching element 1, to there is no particular limitation in the method that changes the insulator 4 that forms between body 3 and the electrode 2b as vacuum (below, be also referred to as the vacuum insulation unit).For example, also can be configured on the predetermined interval at electrode 2b and change between the body 3 and form the space, keep vacuum and at electrode 2b with change and form insulator 4 between the body 3 by the space that makes formation by changing body 3 and electrode 2b.Figure 17 represents an example of this manufacture method.
In example shown in Figure 17, by making electrode 2b and changing the mode that body 3 faces and the laminate and the electrode 2b that will comprise electrode 2a and change body 3 are configured on the predetermined space, at electrode 2b with change between the body 3 and form space (step (I)).Here, keep vacuum, form vacuum insulation body unit (step (II)) between the body 3 and can and change at electrode 2a by the space that makes formation.
Predetermined space in the step (I) for example, can have as forming the needed thickness of vacuum insulation body unit, particularly as mentioned above, for example, can the scope below 50nm in, wherein be preferably in the following scope of 15nm.There is no particular limitation to the lower limit at above-mentioned interval, but for example, can be more than 0.3nm.
In step (I), to laminate and electrode 2b are configured on the predetermined space, there is no particular limitation for the method in formation space between electrode 2b and transformation body 3.For example, can simultaneously control laminate and/or both intervals of electrode 2b, mobile laminate of one side and/or electrode 2b, there is no particular limitation to this method.More particularly, for example, can be as shown in Figure 17, dispose piezoelectrics 17 (step (I-a)) in the mode of traveling electrode 2b and/or above-mentioned laminate, make piezoelectrics 17 distortion (step (I-b)) of configuration.Because be accompanied by piezoelectrics 17 distortion (expand and/or shrink) electrode 2b and/or laminate are moved, so can be with laminate and electrode 2b with predetermined arranged spaced.In addition,, piezoelectrics 17 are expanded or contraction, also expansion and contraction can be combined for laminate and electrode 2b are configured on the predetermined space.
In step (I-a), as long as the collocation method of piezoelectrics 17 can traveling electrode 2b and/or above-mentioned laminate, just there is no particular limitation.For example, as shown in figure 17, can dispose piezoelectrics 17 with the mode that electrode 2b and/or above-mentioned laminate join.In Figure 17, because dispose piezoelectrics 17, so can traveling electrode 2b and above-mentioned laminate both sides in the mode of joining with electrode 2b and above-mentioned laminate both sides.The mode of also can be only joining with a certain side disposes piezoelectrics 17.General piezoelectric can be used for piezoelectrics 17.Also can between piezoelectrics 17 and electrode 2a and/or electrode 2b, dispose other layer when wherein, needing.
In step (II), there is no particular limitation to making the method that keeps vacuum in the space that step (I) forms.For example, also can be after step (I), the interval of keeping laminate and electrode 2b is constant, makes above-mentioned space become vacuum and carries out airtight.In order to make above-mentioned space become vacuum, for example, the integral body that comprises laminate and electrode 2b is in the atmosphere of vacuum.In addition, also can carry out step (I) and step (II) simultaneously.For example, in the atmosphere of vacuum, carry out step (I), can intactly be enclosed in the space that forms between laminate and the electrode 2b.Other when step (I) when comprising a plurality of step, also can be in the atmosphere of vacuum the integral body of laminate and electrode 2b in step (I) midway.In addition, so-called vacuum as mentioned above, for example, can be the following state of about 1Pa.
In example shown in Figure 17, form thermal switching element with the laminate that comprises electrode 2b, electrode 2a and change body 3, but also can with form differently configured electrodes 2a of vacuum insulation unit.Specifically, for example, can followingly carry out.At first, by so that the mode that electrode 2b and transformation body 3 are faced will change body 3 and electrode 2b is configured on the predetermined space, between electrode 2b and transformation body 3, form space (step (i)).In Figure 17, be the state that saves electrode 2a.Secondly, keep in a vacuum, between electrode 2b and transformation body 3, form vacuum insulation unit (step (ii)) by space with above-mentioned formation.Then, can be configured in mode between electrode 2b and the electrode 2a, configured electrodes 2a (step (iii)) will change body 3.
The formation method of the space formation method in step (i) and the step vacuum insulation unit in (ii) can be identical with the method in the step (II) with the method in the above-mentioned steps (I).For example, step (i) also can comprise (i-a) and dispose the step of piezoelectrics 17 and (i-b) piezoelectrics 17 distortion by making configuration at least one the mode that moves from electrode 2b and change that body 3 selects, electrode 2b and transformation body 3 are configured in predetermined space, between electrode 2b and transformation body 3, form the step in space.
To step (iii) in the method for configured electrodes 2a there is no particular limitation, for example, can be with above-mentioned film formation method.In addition, step (iii) not necessarily need be carried out after (ii) in step.For example, also can carry out in step any time (ii) from step (i).
Figure 18 A～18D represents further to comprise insulator 4 between transformation body 3 and electrode 2b, and insulator 4 is as another example of the manufacture method of the thermal switch unit 1 of vacuum insulation unit.
At first, shown in Figure 18 A, comprise electrode 2a, change body 3 and electrode 2b, replace the vacuum insulation unit to form the multilayer film (step (A)) of configuration intermediate 18.Because replace vacuum insulation configuration of cells intermediate 18, so the lamination in the above-mentioned multilayer film is electrode 2a, transformation body 3, intermediate 18 and electrode 2b in proper order.Here, can will be used for intermediate 18 than changing the material that destroys on body 3 easier mechanics ground.The material that so-called mechanics ground easily destroys for example, can be worked as when applying compression stress and expansionary force than the material that changes the easier destruction of body.That is, for example, can change the little material of body 3 with strength ratio.More particularly, for example, can use Bi, Pb, Ag etc.The thickness of intermediate 18 for example, can be the thickness that needs as the vacuum insulation unit, particularly as mentioned above.
Secondly, shown in Figure 18 B, stretch multilayer film by lamination direction and destroy intermediate 18 at above-mentioned multilayer film.After this, shown in Figure 18 C, remove intermediate 18, between transformation body 3 and electrode 2b, form space (step (B)) by gas 19 is blown to remaining intermediate 18.
Secondly, shown in Figure 18 D, keep vacuum by the space that makes formation, and can access the thermal switching element (step (D)) that between electrode 2b and transformation body 3, forms the insulator 4 that is vacuum.With method shown in Figure 17 relatively, this method now, the thickness by control vacuum insulation unit (electrode 2b and change the distance of body 3) can make the thickness of vacuum insulation unit become the thickness of intermediate 18 easilier.
In step (A), there is no particular limitation to the method that forms multilayer film, for example, and can be with above-mentioned film build method.
In step (B), there is no particular limitation along method that its lamination direction stretches to making multilayer film.For example, shown in Figure 18 B, can use piezoelectrics 17.Specifically, step (B) also can comprise mode that (B-a) join with the interarea with at least one side of multilayer film and dispose the step of piezoelectrics 17 and (B-b) piezoelectrics 17 distortion by making configuration (expand and/or shrink), multilayer film is stretched along the lamination direction of multilayer film, destroy the step of intermediate 18.
In step (B-a), the collocation method of piezoelectrics 17, just there is no particular limitation as long as can stretch multilayer film.For example, shown in Figure 18 B, can with multilayer film in the electrode 2b that the comprises mode of joining dispose piezoelectrics 17.Also piezoelectrics 17 can be configured in electrode 2a side, also piezoelectrics 17 can be configured in electrode 2a side and electrode 2b side both sides.General piezoelectric can be used for piezoelectrics 17.Also can between piezoelectrics 17 and electrode 2a and/or electrode 2b, dispose other layer when needing in addition.
In step (B-b), in order to stretch multilayer film, piezoelectrics 17 are expanded or contraction, also expansion and contraction can be combined.For example,, will expand and contraction combines, and then can form the space that has with the thickness identical distance (changing the interval of body 3 and electrode 2b) of intermediate 18 if so that the amount of contraction of piezoelectrics 17 mode identical with swell increment.
In step (B), there is no particular limitation to removing the method for destroying the remaining intermediate 18 in back.For example, shown in Figure 18 C, can remove by being blown into gas 19.Be not only gas, also can remove by being blown into liquid.When using gas, there is no particular limitation to gases used kind, for example, and can be with having and intermediate 18 reactive gases.
At step (C), there is no particular limitation to making the method that keeps vacuum in the space that step (B) forms.For example, also can be after step (B), the interval of keeping transformation body 3 and electrode 2b is constant, makes above-mentioned space become vacuum and carries out airtight.In order to make above-mentioned space become vacuum, for example, the integral body that comprises transformation body 3, electrode 2b, electrode 2a is in the atmosphere of vacuum.In addition, also can carry out step (A) and/or step (B) and step (C) simultaneously.For example, also can in the atmosphere of vacuum, carry out step (A) and step (B), intactly be enclosed in the space that forms between transformation body 3 and the electrode 2b.Other, makes to comprise the integral body that changes body 3, electrode 2a and electrode 2b and be in the atmosphere of vacuum any time also can be from step (A) to step (B).Wherein, so-called vacuum as mentioned above, for example, can be the following state of about 1Pa.
Below, expression is used for the example of manufacture method of the millimicron porous plastid of insulator 4.Expression is as the manufacture method of the porous matter silica of an example of millimicron porous plastid.
The method that obtains porous matter silica roughly can be divided into step of making moistening gel and the step (drying steps) that makes moistening gel drying.
At first, we illustrate the step of making moistening gel.For example, can synthesize by making the raw material that in solvent, mixes silica carry out solgel reaction.Also can use catalyst when at this moment, needing.In the forming process of moistening gel, in solvent, one side reacts above-mentioned raw materials, and one side forms particulate, and formatting by the three-dimensional earth mat of the particulate that makes formation forms cancellous bone lattice.By selecting the composition of raw material and solvent, perhaps, add catalyst, viscosity modifier etc. when needing, and can control the shape (for example, the average diameter of the emptying aperture in the porous matter silica of formation etc.) of above-mentioned bone lattice.In the making step of reality, also the raw material that is blended in the silica in the solvent can be coated on the substrate, by in the state of coating, making its gelation, make the moistening gel of silica through certain hour.
There is no particular limitation for the on-chip coating method of subtend, for example, can correspondingly select spin-coating method, infusion process, mesh printing etc. with the thickness of needs, shape etc.
There is no particular limitation for temperature when making moistening gel, for example, and can be about room temperature.When needing, also can be heated to the following temperature of boiling point of solvent for use.
Raw material about silica, for example, can use the alkoxysilane compound containing trialkylsilyl group in molecular structure of tetramethoxy-silicane, tetraethoxysilane, trimethoxymethylsila,e, dimethoxy dimethylsilane etc. and their oligomer compounds separately, perhaps, the waterglass compound of sodium metasilicate (silicic acid soda), potassium silicate etc., perhaps, colloid silica also can mix use with them.
For solvent, if can dissolve that raw material forms silica etc. then there is no particular limitation, for example, can be separately or mixing make general inorganic, organic solvents such as water, methyl alcohol, ethanol, propyl alcohol, acetone, toluene, hexane.
About catalyst, for example, can water, or the acid of hydrochloric acid, sulfuric acid, acetic acid etc., the perhaps alkali of ammonia, pyridine, NaOH, potassium hydroxide etc.
Just there is no particular limitation if can adjust the viscosity of solvent of mixed material for viscosity modifier, for example, and can spent glycol, glycerol, polyvinyl alcohol, silicone wet goods.
Wherein, when wanting to be dispersed in above-mentioned electronic emission material in the porous matter silica, for example, electronic emission material and above-mentioned raw materials can be mixed together, carry out gelation after being dispersed in the solvent.
Below, the drying steps that makes moistening gel drying is described.There is no particular limitation to the method that makes moistening gel drying, for example, can use the common seasoning of air dry, heat drying, drying under reduced pressure etc., perhaps supercritical drying, freeze-dried method etc.At this moment, from suppressing to be accompanied by the viewpoint that dry gel shrinks, be gratifying with supercritical drying.In addition,, handle, also can suppress to be accompanied by dry gel and shrink by drying is carried out on the solid phase composition surface of the moistening gel made even if in situation with common seasoning.
When using supercritical drying, about being used for the solvent of supercritical drying, also can be intactly with making the solvent that uses in the moistening gel.Perhaps, also can be in advance the solvent exchange that comprises in the moistening gel be become in supercritical drying more easy to handle solvent.About the solvent of displacement, can use as the general solvent that uses of supercritical fluid, for example, the ethanol class of methyl alcohol, ethanol, isopropyl alcohol etc., carbon dioxide, water etc.In addition, also can be in advance the solvent exchange that comprises in the moistening gel be become in these supercritical fluids the acetone of stripping, isopentyl acetic acid, hexane etc. easily.
Supercritical drying, for example, can in the pressure vessel of pressure cooker etc., carry out, when using methyl alcohol as the supercritical drying fluid, pressure cooker is inner to keep pressure 8.09MPa, temperature as the critical condition of methyl alcohol more than 239.4 ℃ by making, the relieving pressure that blows slowly in the certain state of temperature can make moistening gel drying.When using carbon dioxide, same, more than 31.1 ℃, in the certain state of temperature, decontrol pressure inchmeal by the 7.38MPa that keep-ups pressure, temperature, can carry out drying.When water, same, more than 374.2 ℃, the relieving pressure that blows slowly in the certain state of temperature can carry out drying by the 22.04MPa that keep-ups pressure, temperature.The dry time that needs, for example, can in moistening gel, once add more than the time of solvent by supercritical fluid abovely.
After moistening gel being carried out the drying processing, carry out after carrying out chemical reaction on the solid phase composition surface of moistening gel, to be used in the surface conditioning agent drying that drying is handled in the dry method.Because handle by drying and can reduce the surface tension that takes place in the emptying aperture of moistening gel, so the gel can suppress drying the time shrinks.
About surface conditioning agent, for example, can be that the amine of the silicone-based silane finish, hexamethyldisiloxane etc. of the alcoxyl base system silane finish, HMDO, dimethyl siloxane oligomer etc. of silane finish, trimethyl methoxy silane, trimethylethoxysilane etc. is that the ethanol of silane finish, propyl group ethanol, butyl alcohol etc. is inorganic agent etc. with the halogen of trim,ethylchlorosilane, dimethyldichlorosilane etc.Other if can access material with above-mentioned surface conditioning agent effect same, then can be not particularly limited to be used.
In addition, even if also can access same millimicron porous plastid with inorganic material beyond the silica and high-molecular organic material etc.For example, also can be used in the pottery that forms aluminium oxide etc. the general material that uses etc.In addition, by form the millimicron porous plastid with said method after,, also can disperse, form electronic emission material in the inside of porous plastid with the method for gas phase synthesis method etc.
(embodiment)
Below, use embodiment to be described more specifically the present invention.In addition, the embodiment shown in below the present invention is not limited to.
(embodiment 1)
In embodiment 1, as changing body and function SrTiO
3, make thermal switching element 1 as shown in figure 19.Electrode 2a and electrode 2b Al, insulator 9 is used Al
2O
3, electrode 10 is used Au.The manufacture method of the thermal switching element 1 that uses among the embodiment 1 is shown in Figure 20 A～20E.
At first, at SrTiO as transformation body 3
3Crystal on pile up resist 20 (Figure 20 A).Use positive type anticorrosive additive material about resist, with general resist coating method.Secondly, pile up Al layer 21 (Figure 20 B) on the whole with sputtering method.Then,, remove resist 20 and be located at part on the resist 20 in the Al layer 21, form electrode 2a and electrode 2b (Figure 20 C) by peeling off.Then, form by Al with sputtering method
2O
3The insulator 9 (Figure 20 D) that constitutes.At last, form the electrode 10 (Figure 20 E) that constitutes by Au, make thermal switching element shown in Figure 19 1 with sputtering method.Make being about 5 μ m apart from d (body 3 length on one side is suitable with changing) between electrode 2a and the electrode 2b, the thickness of insulator 9 is about 100nm, and the thickness of electrode 10 is about 2 μ m.In addition, the transformation body of seeing from arrow E shown in Figure 19 3 is of a size of 10 μ m * 0.5 μ m.
For the thermal switching element 1 of such making, by between electrode 10 and transformation body 3, applying voltage, on transformation body 3, add electric energy, investigation adds the electrode 2a of energy front and back and the variation of the pyroconductivity between the electrode 2b.With the pyroconductivity between Hull graceful (Harman) method mensuration electrode 2a and the electrode 2b.So-called Herman process is from estimate the method for heat conduction state by the temperature difference that applies the sample two ends that electric current generates sample.More particularly, can try to achieve pyroconductivity by enough formula S TI/ Δ T.S is thermoelectric power (V/K), and T is the mean temperature (K) of sample, and I is current value (A), and Δ T (K) is the temperature difference of sample.In addition, short of special record, the mensuration of pyroconductivity is all carried out at room temperature.Also be same among the embodiment afterwards.
As a result, do not apply in the state of voltage between electrode 10 and transformation body 3, the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, at electrode 10 with change between the body 3 and apply voltage, heat conductivity occurs, confirmed as controlling the thermal switching element of hot transmission and implementing function by applying voltage in the stage of the voltage that applies tens of approximately V.
Secondly, make thermal switching element 1 shown in Figure 21, same, investigation applies the electrode 2a of energy front and back and the variation of the pyroconductivity between the electrode 2b.The thermal switching element 1 that following making is shown in Figure 21.Use the SrTiO of doping Nb in the scope of 0.1 atom %～10 atom % as electrode 2a
3Crystal (Nb:SrTiO
3), on it, form by SrTiO with sputtering method
3The transformation body 3 that constitutes.Under about 450 ℃～700 ℃ heating atmosphere, form and change body 3.Similarly form the electrode 2b that constitutes by Al with thermal switching element 1 shown in Figure 19, by Al
2O
3The insulator 9 that constitutes, the electrode 10 that constitutes by Au.The thickness (suitable with the distance between electrode 2a and the electrode 2b) that order changes body 3 is about 1 μ m, is about 100nm through the electrode 10 of insulator 9 and the distance that changes between the body 3.
For the thermal switching element 1 of such making, investigation adds electric energy by apply voltage between electrode 10 and transformation body 3 on transformation body 3, in the electrode 2a that adds the energy front and back and the variation of the pyroconductivity between the electrode 2b.
As a result, do not apply in the state of voltage between electrode 10 and transformation body 3, the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when increase is applied to electrode 10 and change voltage between the body 3, heat conductivity occurs, confirmed as controlling the thermal switching element of the transmission of heat and implementing function by applying voltage in the stage of the voltage that adds 2.5V.
In addition, in embodiment 1, as changing body and function SrTiO
3But other uses LaTiO in changing body 3
3, (La, Sr) Ti O
3, YTi O
3, (Sm, Ca) TiO
3, (Nd, Ca) Ti O
3, (Pr, Ca) TiO
3, SrTiO
3-d(0＜d≤0.1), (Pr
1-xCa
x) MnO
3(0＜x≤0.5), etc. situation in also can access same result.In addition, using GdBaMn
2O
6Deng by formula X
1BaX
2 2O
6(X
1Be at least a element of selecting from La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, X
2Be Mn and/or Co) expression oxide and by formula (V
1-yX
3 y) O
x(0≤y≤0.5,1.5≤x≤2.5, X
3Be at least a element of selecting from Cr, Mn, Fe, Co and Ni) also can access same result the situation of oxide of expression.
(embodiment 2)
In embodiment 2, as changing the SrTiO that body 3 uses doping Cr in the scope of 0.1 atom %～10 atom %
3(Cr:SrTiO
3), make thermal switching element shown in Figure 22 1.
At first, use SrTiO
3As matrix 22, on matrix 22, form by SrRuO with sputtering method
3The electrode 2a that constitutes.Secondly, on electrode 2a, form by Cr:SiTiO
3The transformation body 3 that constitutes further forms the electrode 2b that is made of Pt on it.When forming transformation body 3 and electrode 2b, also use sputtering method.Under about 450 ℃～700 ℃ heating atmosphere, form and change body 3 and electrode 2a.Wherein, the thickness of electrode 2a, transformation body 3 and electrode 2b is about 200nm respectively, 300nm and 2 μ m.
For the thermal switching element 1 of such making, investigation applies electric energy by apply voltage between electrode 2a and electrode 2b on transformation body 3, in the electrode 2a that applies the energy front and back and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.
Its result does not apply in the state of voltage between electrode 2a and electrode 2b, and the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when increase is applied to voltage between electrode 2a and the electrode 2b, heat conductivity occurs, confirmed as by adding that voltage can control the thermal switching element of the transmission of heat and implement function in the stage of the voltage that adds about 0.5V.In addition, can see hysteresis quality in the heat conductivity of thermal switching element 1, be that the heat conductivity between electrode 2a and the electrode 2b also remains unchanged in 0 the situation even if add voltage between electrode 2a and electrode 2b after heat conductivity occurring.After this, by the voltage of the voltage reversal that adds between electrode and apply at first, the heat conductivity between electrode 2a and the electrode 2b just disappears.Thereby we see by selecting to be used to change the material of body 3, can realize having non-volatile thermal switching element.If use non-volatile thermal switching element, then can construct the thermal switching element of further reduction consumption of electric power.
Wherein, in embodiment 2, as changing body and function Cr:SrTiO
3But other uses SrZrO in changing body 3
3, (La, Sr) TiO
3, Y (Ti, V) O
3, SrTiO
3-d(0＜d≤0.1), (Pr
1-xCa
x) MnO
3Also can access same result in the situation of (0＜x≤0.5) etc.In addition, using NdBaMn
2O
6Deng by formula X
1BaX
2 2O
6(X
1Be at least a element of selecting from La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, X
2Be Mn and/or Co) expression oxide and by formula (V
1-yX
3 y) O
x(0≤y≤0.5,1.5≤x≤2.5, X
3Be at least a element of selecting from Cr, Mn, Fe, Co and Ni) also can access same result the situation of oxide of expression.
(embodiment 3)
In embodiment 3, use SrTiO as changing body 3
3And LaSrMnO
3Laminate, make thermal switching element shown in Figure 23 1.
Use Nb:SrTiO
3As matrix 22, the film shown in the accumulation of use laser ablation method is following.Accumulation is to pine for 450 ℃～700 ℃ add, and carries out under the oxygen atmosphere of 10mmTorr～500mmTorr.At first, on matrix 22, dispose SrTiO
3(thickness 50nm) further disposes LaSrMnO on it
3(thickness 100nm) is as changing body 3.Secondly, on transformation body 3, dispose SrRuO
3(thickness 10nm).Then, use sputtering method at SrRuO
3Last configuration Pt (thickness 240nm).Temperature during sputter is 400 ℃.Then, as shown in Figure 23 to SrRuO
3Carry out microfabrication with the laminate of Pt, form electrode 2a and electrode 2b.After this, be that the mode of 80nm disposes Al as insulator 9 with the thickness of counting from the surface of electrode 2a and electrode 2b
2O
3, last, as electrode 10 configuration Au (thickness 900nm).In addition, be applied to the efficient that changes the magnetic field on the body 3, electrode 10 be divided into a plurality of electrodes (amount to 15, only recorded and narrated a part wherein in Figure 23) be configured in order to improve.
For the thermal switching element 1 of such making, investigation applies magnetic field by flow through electric current 11 in electrode 10 on transformation body 3, in the electrode 2a that applies the magnetic energy front and back and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.In addition, in a plurality of electrodes 10 all at the equidirectional electric current that flows through.
Its result does not flow through in electrode 10 in the state of electric current, and the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when the electric current that flows through in making electrode 10 increases, in each root electrode 10, flow through the stage that is about the 2.5mA electric current and heat conductivity occurs, confirmed as controlling the thermal switching element of the transmission of heat and implementing function by applying magnetic field.
In addition, in embodiment 3, use (La, Sr) MnO as changing body
3But, other, in changing body 3, use (La, Sr)
3Mn
2O
7, X
4 2FeReO
6, X
4 2FeMoO
6, (La, X
4)
2CuO
4, (Nd, Ce)
2CuO
4, (La, X
4)
2NiO
4, LaMnO
3, YMnO
3, (Sm, Ca) MnO
3, (Nd, Ca) MnO
3, (Pr, Ca) MnO
3, (La, X
4) FeO
3, YFeO
3, (Sm, X
4) FeO
3, (Nd, X
4) FeO
3, (Pr, X
4) FeO
3, (La, X
4) CoO
3, (Y, X
4) VO
3, (Bi, X
4) MnO
3, SrTiO
3-dAlso can access same result in the situation of (0＜d≤0.1) etc.But, X
4It is at least a element of selecting from Sr, Ca and Ba.In addition, at SmBa Mn
2O
6Deng by formula X
1BaX
2 2O
6(X
1Be at least a element of selecting from La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, X
2Be Mn and/or Co) expression oxide and by formula (V
1-yX
3 y) O
x(0≤y≤0.5,1.5≤x≤2.5, X
3Be at least a element of from Cr, Mn, Fe, Co and Ni, selecting) also can access same result in the situation of oxide of expression.
(embodiment 4)
In embodiment 4, make the thermal switching element that comprises the formation shown in Figure 14 B.
With MgO as matrix, with the laser ablation method film shown in below the lamination on matrix.Lamination is to pine for 450 ℃～700 ℃ add, and carries out under the oxygen atmosphere of 10mmTorr～500mmTorr.At first, lamination ITO (Sn-doped (doping Sn's) In on matrix
2O
3: thickness 50nm), further lamination (Pr, Ca) MnO on it
3(thickness 100nm) is as changing body 3.Secondly, use sputtering method at SrRuO
3Last lamination Pt (thickness 240nm).Temperature during sputter is 400 ℃.Then, to SrRuO
3Carry out microfabrication with the laminate of Pt, form electrode 2a and electrode 2b, make thermal switching element.
For the thermal switching element of such making, by inject pulse laser (wavelength 532nm) from the matrix side luminous energy is applied on the transformation body 3, investigation is in the electrode 2a that applies the luminous energy front and back and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.
Its result does not inject in the state of light on changing body 3, and the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when light being injected into when changing on the body 3, heat conductivity occurs, confirmed implementing function as the thermal switching element that can control hot transmission by light incident in the stage of the extremely short pulse of 100 femtoseconds of the about 0.5W of irradiation.In addition, even if in the situation that the wavelength that makes pulse laser changes, also can access same result from the near infrared region to the visible region.
(embodiment 5)
In embodiment 5, make the thermal switching element that comprises formation shown in Figure 15.
Use LiTaO
3As matrix, use magnetic hole pipe sputtering method film shown in below the lamination on matrix.Film forming is to pine for 450 ℃～700 ℃ add, and (voltage ratio is Ar: O under oxygen one argon-mixed atmosphere of 10mmTorr～500mmTorr
2=1: 1) carry out.At first, on matrix, form V
2O
3The film of (thickness 50nm) is as changing body 3.Secondly, under 400 ℃,,, form electrode 2a and electrode 2b by microfabrication changing the film that forms Pt (thickness 50nm) on the body 3.Then, the film of using electron beam vaporation method formation Ni-Cr alloy (thickness 100nm) further forms the film of Au (thickness 300nm) as resistive element 15, forms electrode 10.
For the thermal switching element of such making, make resistive element 15 heatings by in electrode 10, flowing through electric current, the heat that produces is applied on the transformation body 3.Investigation is in the electrode 2a that applies the heat energy front and back and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.
As a result, do not flow through the state of electric current in electrode 10, promptly in the resistive element 15 athermic states, the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when the electric current of electrode 10 is flow through in increase, heat conductivity occurs, confirmed implementing function as the thermal switching element of the transmission that can control heat by applying heat energy in the stage of flowing through about 4mA electric current.
In addition, in embodiment 5, as changing body and function V
2O
3But other uses VO in changing body 3
x(1.5≤x≤2.5), Ni (S, Se)
2, EuNiO
3, SmNiO
3, (Y, X
4) VO
3, SrTiO
3-d(0＜d≤0.1), (Pr
1-xCa
x) MnO
3Also can access same result in the situation of (0＜x≤0.5) etc.But, X
4It is at least a element of selecting from Sr, Ca and Ba.In addition, by formula X
1BaX
2 2O
6(X
1Be at least a element of from La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, selecting, X
2Be Mn and/or Co) expression oxide and by formula (V
1-yX
3 y) O
x(0≤y≤0.5,1.5≤x≤2.5, X
3Be at least a element of selecting from Cr, Mn, Fe, Co and Ni) also can access same result the situation of oxide of expression.
(embodiment 6)
In embodiment 6, make thermal switching element 1 as shown in figure 24.
Use is as a kind of LiTaO of piezoelectric
3(thickness 0.8 μ m) as displacement body 16, the film shown in below disposing on displacement body 16 with sputtering method.The configuration of each layer is to pine for 200 ℃～500 ℃ add, and (voltage ratio is Ar: N under argon-nitrogen mixed gas atmosphere of 0.1mmTorr～100mmTorr
2=3: 2) carry out.At first, on displacement body 16, dispose LaVO
3(thickness 100nm) is as changing body 3.Secondly, on transformation body 3, dispose Al (thickness 1000nm) as electrode 2a and electrode 2b.Further, with displacement body 16 in the face of opposition side of the face that joins of transformation body 3 on, configuration Al (thickness 1000nm) is as electrode 10.Make electrode 10 become as shown in figure 24 comb shape with photoetching process.Be spaced apart 2 μ m between the comb poles 10.
For the thermal switching element 1 of such making, by on displacement body 16, adding voltage, make in the displacement body 16 and distort with electrode 10, according to the distortion that takes place pressure is applied on the transformation body 3.Investigation is in the electrode 2a that adds the mechanical energy front and back in this wise and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.
As a result, do not add that on displacement body 16 in the state of voltage, the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when increase is added in voltage on the displacement body 16, heat conductivity occurs, confirmed as implementing function by applying the thermal switching element that to control the transmission of heat as a kind of pressure of mechanical energy in the stage that adds about 0.5V voltage.
In addition, in embodiment 6, use LaVO as changing body
3But other uses (Y, X in changing body 3
4) MnO
3, (La, X
4) MnO
3, (Bi, X
4) MnO
3, (Bi, X
4) TiO
3, (Bi, X
4)
3TiO
7, (Pb, X
4) TiO
3, SrTiO
3-d(0＜d≤0.1), (Pr
1-xCa
x) MnO
3Also can access same result in the situation of (0＜x≤0.5) etc.But, X
4It is at least a element of from Sr, Ca and Ba, selecting.In addition, at SmBaMn
2O
6Deng by formula X
1BaX
2 2O
6(X
1Be at least a element of from La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb, selecting, X
2Be Mn and/or Co) expression oxide and by formula (V
1-yX
3 y) O
x(0≤y≤0.5,1.5≤x≤2.5, X
3Be at least a element of selecting from Cr, Mn, Fe, Co and Ni) also can access same result the situation of oxide of expression.In addition, in embodiment 6, use LiTaO as displacement body 16
3But other is using LiNbO
3(Ba, Sr) TiO
3, Pb (Zr, Ti) O
3Deng situation in also can access same result.
(embodiment 7)
In embodiment 7, make the thermal switching element 1 that comprises insulator shown in Figure 24.
At first, by SrTiO
3On the matrix that constitutes, configuration SrRuO
3(thickness 200nm) forms electrode 2a.Secondly, by on electrode 2a, disposing the SrTiO of doping Cr in the scope that is used in 0.1 atom %～10 atom %
3(Cr:SrTiO
3, thickness 300nm) and formation transformation body 3.Form electrode 2a and change body 3 with laser ablation method (substrate temperature is in 450 ℃～700 ℃ scope).
Secondly, on transformation body 3, dispose porous matter silica layer (the about 0.1 μ m of thickness) as insulator 4 with above-mentioned sol-gal process.The concrete manufacture method of representing porous matter silica layer below.
At first, as the solution that comprises silica raw material, modulation is with the solution of mole ratio 1: 3: 4 mixed tetramethoxy-silicane, ethanol and ammonia spirit (regulation 0.1).Diamond particles as the about 10nm of electronic emission material average grain diameter is dispersed in the solution.After above-mentioned solution is carried out stir process, form the viscosity that is suitable for applying, spin coated thickness on transformation body 3 is about 0.1 μ m.After this, by drying the silica sol of above-mentioned coating is integrated gelation.By high resolution scanning type electron microscope the silica gel that forms is estimated, can be confirmed to have formed the moistening gelatine structure that the three-dimensional grid by Si-O-Si combination shown in Figure 3 constitutes.In addition, also can confirm to be scattered here and there equably diamond particles as electronic emission material.
Secondly, cleaning above-mentioned such moistening gel made from ethanol, and after carrying out solvent exchange,, making porous matter silica layer by using the supercritical drying of carbon dioxide.Under the condition of 50 ℃ of pressure 12MPa, temperature through 4 hours supercritical drying after, decontroling pressure inchmeal becomes atmospheric pressure, reduces the temperature to room temperature then.Then,, in 400 ℃, the test portion through super-dry is carried out annealing in process, remove the adsorbent that goes to porous matter silica layer by under blanket of nitrogen.
In addition, the void content of the porous matter silica layer made is estimated, be about 92% with Brunauer-Emmett-Teller (cloth Long Naoer-Ai Meite-Teller) method (BET method).In addition, same, the average emptying aperture footpath that uses the same method and estimate porous matter silica layer is about 20nm.
By under nitrogen atmosphere, electrode 2a, transformation body 3 and insulator 4 to such making in 400 ℃ carry out annealing in process.By this annealing in process, make the surface hydriding of the diamond particles that comprises in the porous matter silica layer, can make diamond particles activate more as electronic emission material.
At last, use sputtering method, on insulator 4, dispose Pt (thickness 200nm), form electrode 2b.
For the thermal switching element 1 of such making, investigation applies electric energy by apply voltage between electrode 2a and electrode 2b on transformation body 3, in the electrode 2a that adds the energy front and back and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.
As a result, do not add in the state of voltage between electrode 2a and electrode 2b that the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when increase is applied to voltage between electrode 2a and the electrode 2b, heat conductivity occurs, confirmed as by adding that voltage can control the thermal switching element of the transmission of heat and implement function in the stage of the voltage that is applied with about 5V.
In addition, two interelectrode emissioies when the mensuration heat conductivity occurs obtain number 10mA/cm
2Value.Further, the heat conductivity of maintaining heat switch element 1 is constant, electrode 2a is contacted with the Au that remains on 30 ℃, measure the variations in temperature of electrode 2a, the temperature of observing electrode 2a reduces about 30 degree, promptly become about 0 ℃ phenomenon, confirmed as the thermal switching element of process insulator 4 and the function of cooling element.
Further in embodiment 7, make the thermal switching element 1 that comprises insulator shown in Figure 44 and electrode 8, carry out same evaluation.
At first, by SrTiO
3On the matrix that constitutes, configuration SrRuO
3(thickness 200nm) forms electrode 2a.Secondly, by on electrode 2a, disposing the SrTiO of doping Cr in the scope that is used in 0.1 atom %～10 atom %
3(Cr:SrTiO
3, thickness 300nm) and formation transformation body 3.Then, changing configuration (Sr, Ca, Ba) CO on the body 3
3(thickness 50nm) forms electrode 8, further forms insulator 4 with the above-mentioned porous matter silica layer (thickness 0.1 μ m) that similarly disposes on it.Form electrode 2a, change body 3 and electrode 8 with laser ablation method (substrate temperature is in 450 ℃～700 ℃ scope).At last, on insulator 4, dispose Pt (thickness 2000nm) as electrode 2b, make thermal switching element 1 as shown in Figure 4 with sputtering method.
For the thermal switching element 1 of such making, investigation applies electric energy by apply voltage between electrode 2a and electrode 2b on transformation body 3, in the electrode 2a that is applied with the energy front and back and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.
As a result, do not apply in the state of voltage between electrode 2a and electrode 2b, the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when increase is applied to voltage between electrode 2a and the electrode 2b, heat conductivity occurs, confirmed as by adding that voltage can control the thermal switching element of the transmission of heat and implement function in the stage of the voltage that is applied with about 1.8V.When the voltage that needs to add about 5V from the situation that is not having configured electrodes 8 was considered, we saw by configured electrodes 8, efficient are brought up to more than the twice.
In addition, the heat conductivity of maintaining heat switch element 1 is constant, and electrode 2a is contacted with the Au that remains on 30 ℃, measures the variations in temperature of electrode 2a, observe the phenomenon of the temperature reduction of electrode 2a, confirmed as the thermal switching element of process insulator 4 and the function of cooling element.
In addition, the porous matter silica layer that forms the about 0.1 μ m of thickness in embodiment 7 is as insulator 4, even if but also can access same result at the thickness of insulator 4 in the scope of about 0.05 μ m～10 μ m.But, change according to the structure of element, used material etc. because consider optimal thickness, so the thickness of insulator 4 is not limited to above-mentioned scope as insulator 4.
In addition, in embodiment 7 as electrode 8 usefulness (Sr, Ca, Ba) CO
3But, other, with (Sr, Ca, Ba)-also can access same result in the situation of O, Cs-O, Cs-Sb, Cs-Te, Cs-F, Rb-O, Rb-Cs-O, Ag-Cs-O etc.
(embodiment 8)
In embodiment 8, use Ca as changing body 3
3Co
4O
9, make thermal switching element 1 as shown in figure 22.
At first, with (Al
2O
3) as matrix 22, form by NaCo on matrix 22 with sputtering method
2O
6The electrode 2a that constitutes.Secondly, on electrode 2a, form Ca
3Co
4O
9The transformation body 3 that constitutes further forms by NaCo thereon
2O
6The electrode 2b that constitutes.Also form and change body 3 and electrode 2b with sputtering method.Under about 450 ℃～850 ℃ heating atmosphere, form and change body 3 and electrode 2a.In addition, the thickness of electrode 2a, transformation body 3 and electrode 2b is about 200nm respectively, 300nm and 2 μ m.
For the thermal switching element 1 of such making, investigation is by applying voltage between electrode 2a and electrode 2b, and applies electric energy on the body 3 changing, and is being applied with the electrode 2a before and after the energy and the variation of the pyroconductivity between the electrode 2b.Carry out the mensuration of pyroconductivity similarly to Example 1.
As a result, do not apply in the state of voltage between electrode 2a and electrode 2b, the pyroconductivity between electrode 2a and the electrode 2b is very little, reaches the degree that can not measure.After this, when increase is applied to voltage between electrode 2a and the electrode 2b, heat conductivity occurs, confirmed implementing function as the thermal switching element of the transmission that can control heat by applying voltage in the stage of the voltage that adds about 0.5V.In addition, in the heat conductivity of thermal switching element 1, can see hysteresis quality, even if after heat conductivity occurring between electrode 2a and electrode 2b the voltage that applies be 0 o'clock, the heat conductivity between electrode 2a and the electrode 2b also remains unchanged.After this, by the voltage of the voltage reversal that applies between electrode and apply at first, the heat conductivity between electrode 2a and the electrode 2b just disappears.Thereby we see by selecting to be used to change the material of body 3, can realize having non-volatile thermal switching element.If use non-volatile thermal switching element, then can construct the thermal switching element of further reduction consumption of electric power.
In addition, in embodiment 8, use Ca as changing body 3
3Co
4O
9, but using by CuX
5O
2(X
5Be at least a element of from Al, In, Ga and Fe, selecting) also can access same result in the situation of the delafossite etc. of expression.
Only otherwise break away from the feature of the intent of the present invention and essence, just can apply the present invention to other execution mode.The execution mode of Jie Shiing all is illustrated in all respects in this manual, but is not limited to this.Scope of the present invention is represented by in the above description additional claims not, is included in claims with the meaning of claims equalization and all changes in the scope.
As described above,, then can provide to have and existing diverse formation, can control the thermal switching element and the manufacture method thereof of the transmission of heat by applying energy if according to the present invention.
If be used for information terminal etc. CPU etc. semiconductor chip heat-sink unit and as the heat delivery unit of the refrigerator of hot machine-operated representative article, freezer, air-conditioning etc., hot-fluid control unit of hot distribution etc., carry out the part of heat transfer, then can enough thermal switching elements of the present invention, and there is no particular limitation.At this moment, not only can be used for the part of needs control heat transfer, also can be used in the part that does not need the merely transmission heat controlled.
Claims (21)
1. thermal switching element is characterized in that:
Described thermal switching element comprise first electrode, second electrode and be configured in described first electrode and described second electrode between the transformation body;
Described transformation body comprises by applying energy and carries out the material that electronics changes mutually;
By described energy is applied on the described transformation body, and the pyroconductivity between described first electrode and described second electrode is changed,
Also comprise first insulator;
Described first insulator is configured between described transformation body and described second electrode,
Also comprise third electrode;
Described third electrode is configured between described transformation body and described first insulator.
2. thermal switching element according to claim 1 is characterized in that:
By applying described energy, form and make ratio of specific heat apply the easier state that between described first electrode and described second electrode, moves before the described energy.
3. thermal switching element according to claim 1 is characterized in that:
By applying described energy, the electronics pyroconductivity of described transformation body is changed.
4. thermal switching element according to claim 1 is characterized in that:
By applying described energy, make described transformation body generation insulator-metallic transition.
5. thermal switching element according to claim 1 is characterized in that:
By applying described energy, form and make hot electron than the easier state that in described transformation body, moves before applying described energy.
6. thermal switching element according to claim 1 is characterized in that:
The described energy that applies is at least a energy of selecting from electric energy, luminous energy, mechanical energy, magnetic energy and heat energy.
7. thermal switching element according to claim 6 is characterized in that:
Applying of described energy is by electronics or hole are injected into described transformation body, induces in described transformation body perhaps that electronics or hole carry out.
8. thermal switching element according to claim 6 is characterized in that:
Applying by apply voltage between described first electrode and described second electrode of described energy undertaken.
9. thermal switching element according to claim 1 is characterized in that:
The material that described electronics changes mutually comprises and has by formula A
xD
yO
zThe oxide of represented composition;
Wherein, in described formula, A is at least a element of selecting from alkali metal, alkaline-earth metal, Sc, Y and rare earth element, D is at least a migration element of selecting from IIIa family, IVa family, Va family, VIa family, VIIa family, VIII family and Ib family, O is an oxygen, and x, y, z are positive numbers.
10. thermal switching element according to claim 9 is characterized in that:
At described formula A
xD
yO
zIn x, y, z be the numerical value that satisfies following relationship:
x＝n+2
y＝n+1
z＝3n+4
Wherein, n is 0,1,2 or 3.
11., it is characterized in that according to the described thermal switching element of claim 9:
At described formula A
xD
yO
zIn x, y, z be the numerical value that satisfies following relationship:
x＝n+1
y＝n+1
z＝3n+5
Wherein, n is 1,2,3 or 4.
12., it is characterized in that according to the described thermal switching element of claim 9:
At described formula A
xD
yO
zIn x, y, z be the numerical value that satisfies following relationship:
x＝n
y＝n
z＝3n
Wherein, n is 1,2 or 3.
13., it is characterized in that according to the described thermal switching element of claim 9:
At described formula A
xD
yO
zIn x, y, z be the numerical value that satisfies following relationship:
x＝n+1
y＝n
z＝4n+1
Wherein, n is 1 or 2.
14., it is characterized in that according to the described thermal switching element of claim 9:
At described formula A
xD
yO
zIn x, y, z be the numerical value that satisfies following relationship:
X=0 or 1
Y=0 or 1
z＝1
Wherein, a certain side who selects from x and y is 0.
15., it is characterized in that according to the described thermal switching element of claim 9:
At described formula A
xD
yO
zIn x, y, z be the numerical value that satisfies following relationship:
X=0,1 or 2
Y=0,1 or 2
Wherein, a certain side who selects from x and y is 0;
Z is,
When x is 0, on the value of y, add 1 value,
When y is 0, on the value of x, add 1 value.
16., it is characterized in that according to the described thermal switching element of claim 9:
At described formula A
xD
yO
zIn x, y, z be the numerical value that satisfies following relationship:
X=0 or 2
Y=0 or 2
z＝5
Wherein, a certain side who selects from x and y is 0.
17. thermal switching element according to claim 1 is characterized in that:
The material that described electronics changes mutually comprises select at least a from not special type insulator and magnetic semiconductor.
18. thermal switching element according to claim 1 is characterized in that:
Described first insulator is a vacuum.
19. thermal switching element according to claim 1 is characterized in that:
Described first insulator is a tunnel insulator.
20. thermal switching element according to claim 1 is characterized in that:
Described first insulator is made of the insulating material with porous matter structure.
21. thermal switching element according to claim 20 is characterized in that: described insulating material comprises electronic emission material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP021841/2003 | 2003-01-30 | ||
| JP2003021841 | 2003-01-30 | ||
| JP324404/2003 | 2003-09-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1745485A CN1745485A (en) | 2006-03-08 |
| CN100477312C true CN100477312C (en) | 2009-04-08 |
Family
ID=36140042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800033512A Expired - Fee Related CN100477312C (en) | 2003-01-30 | 2004-01-29 | Thermal switching element and method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100477312C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2827977A4 (en) | 2012-03-23 | 2015-11-25 | Intelligent Energy Ltd | Hydrogen producing fuel cartridge and methods for producing hydrogen |
| US9933316B2 (en) * | 2014-06-18 | 2018-04-03 | Kidde Technologies, Inc. | Thermal sensor |
| CN106091470A (en) * | 2016-06-21 | 2016-11-09 | 上海工程技术大学 | A kind of refrigeration plant and refrigerating method thereof |
| US10216013B2 (en) * | 2017-03-07 | 2019-02-26 | Wisconsin Alumni Research Foundation | Vanadium dioxide-based optical and radiofrequency switches |
| ES2863357T3 (en) * | 2017-06-16 | 2021-10-11 | Carrier Corp | Electrocaloric element, a heat transfer system comprising an electrocaloric element and a method of making them |
| EP3540335A4 (en) * | 2017-10-23 | 2020-02-12 | Guangdong Oppo Mobile Telecommunications Corp., Ltd. | Heat dissipation apparatus, terminal, and control method for heat dissipation apparatus |
| CN114005875B (en) * | 2021-11-01 | 2024-05-28 | 南京大学 | Method for regulating and controlling thermal conductivity of metal/insulator interface |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376184A (en) * | 1992-06-17 | 1994-12-27 | Aspden; Harold | Thermoelectric heat transfer apparatus |
-
2004
- 2004-01-29 CN CNB2004800033512A patent/CN100477312C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376184A (en) * | 1992-06-17 | 1994-12-27 | Aspden; Harold | Thermoelectric heat transfer apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1745485A (en) | 2006-03-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3701302B2 (en) | Thermal switch element and manufacturing method thereof | |
| JP3874365B2 (en) | Thermoelectric conversion device, cooling method and power generation method using the same | |
| JP5139073B2 (en) | Nanostructured bulk thermoelectric materials | |
| JP3922652B2 (en) | Thermoelectric conversion device, cooling method and power generation method using the same | |
| CN101904025B (en) | Thermo-electric device, thermo-electric materials and method for forming block thermo-electric materials | |
| Kundu | Magnetic perovskites | |
| KR102138527B1 (en) | Thermoelectric material with phase separation, thermoelectric device and method for manufacturing the same | |
| JP2005506693A (en) | Phonon blocking electron transfer low dimensional structure | |
| JP2007180406A (en) | Non-volatile switching element, its manufacturing method and integrated circuit having the same | |
| CN100477312C (en) | Thermal switching element and method for manufacturing the same | |
| CN101969095A (en) | Quasi one-dimensional nano structural thermoelectric material, device and preparation method thereof | |
| JP2006237304A (en) | Ferromagnetic conductor material, its manufacturing method, magnetoresistive element and field effect transistor | |
| JP6466564B2 (en) | Initialization method of multiferroic element | |
| Reimann et al. | Fabrication of a transversal multilayer thermoelectric generator with substituted calcium manganite | |
| Tominaga | Topological memory using phase-change materials | |
| KR20200095861A (en) | Thermoelectric composite, and thermoelectric element and device including the same | |
| JPWO2014167697A1 (en) | Thermoelectric conversion element | |
| US20140373891A1 (en) | Thermoelectric structure, and thermoelectric device and thermoelectric apparatus including the same | |
| JP2009117430A (en) | Thermoelectric element | |
| JP2018006546A (en) | Thermoelectric conversion element, manufacturing method thereof and thermoelectric conversion device | |
| US20070084495A1 (en) | Method for producing practical thermoelectric devices using quantum confinement in nanostructures | |
| US20070084499A1 (en) | Thermoelectric device produced by quantum confinement in nanostructures | |
| US20140305478A1 (en) | Method for Producting a Thermoelectric Material | |
| JP2004288841A (en) | Oxychalcogenide and thermoelectric material | |
| KR102195495B1 (en) | Channel of electronic device for controlling heat transport and electronic device for controlling heat transport including the channel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090408 |