CN100477120C - Control method of polishing technology - Google Patents
Control method of polishing technology Download PDFInfo
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- CN100477120C CN100477120C CNB2005101375532A CN200510137553A CN100477120C CN 100477120 C CN100477120 C CN 100477120C CN B2005101375532 A CNB2005101375532 A CN B2005101375532A CN 200510137553 A CN200510137553 A CN 200510137553A CN 100477120 C CN100477120 C CN 100477120C
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Abstract
It is a polishing process control method. First, provide a chip, and the chip has been covered with a thin film layer. Measuring thin film thickness on the chip's several regions, in order to obtain the average film thickness distribution. Thereafter, according to the average film thickness distribution, it sets a polishing rate formula. Then, based on this polishing rate formula, it processes the polishing technique to the chip. This method can improve the film thickness uniformity after polishing, and furthermore improve the efficiency of polishing technique and yield of the chip.
Description
Technical field
The present invention relates to a kind of control method of semiconductor technology, relate in particular to a kind of control method of glossing.
Background technology
Chemical Mechanical Polishing Technique has been widely used in the planarization of the isostructural making of top electrode of dual-metal inserting, metal plug, ditching type capacitor (Trench Capacitor) and dielectric layer, is to make the indispensable technology of integrated circuit.
Main technological parameter in the CMP (Chemical Mechanical Polishing) process has the relative linear velocity of material, wafer and polishing pad of composition, polishing pad of pressure, polishing fluid and polishing particles that rubbing head executes and temperature etc.Yet the result of chemico-mechanical polishing can be subjected to the influence of many non-technological parameters, and influences yield and reliability (Reliability).
For example; in dual-metal inserting technology; the copper film of being electroplated is thicker usually at the thickness of wafer perimeter; therefore after chemico-mechanical polishing; regular meeting causes crystal edge copper residual; or cause central area excessive polishing (Over Polish) and the recessed problems such as (Dishing) of dish, and cause the problem of the electrical inequality of each regional double-metal inlaid structure in the wafer.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of control method of glossing, in order to promote the evenness of membranous layer after polishing.
Another object of the present invention provides a kind of dual-metal inserting technology, and each regional formed double-metal inlaid structure is had uniformly electrically.
The invention provides a kind of control method of glossing, comprise wafer is provided.Covered thin film on this wafer.Then, measure film several regional thickness on wafer, to obtain the distribution of average film thickness.Afterwards, set a polishing speed (Removal Rate) prescription (Recipe) according to the distribution of this average film thickness.Then, according to this polishing speed prescription this wafer is carried out glossing.
In an embodiment, the control method of this glossing is with reference to a database, sets the polishing speed prescription with the distribution of foundation average film thickness.The preferable polishing speed of the distribution of these several average film thickness of database storage and the distribution of corresponding these average film thickness distributes.
In an embodiment, above-mentioned setting polishing speed Formulation Example is set several zones of corresponding wafer in this way and is put on the pressure of polishing pad, also can be the relative linear velocity of setting wafer and polishing pad.
In an embodiment, the control method of above-mentioned glossing also comprises carries out glossing control to another wafer.This glossing control example is utilized into rank technology controlling and process (Advanced ProcessControl, APC) method in this way.
In an embodiment, the material of above-mentioned film for example is a copper.
In an embodiment, the formation method of above-mentioned film for example is galvanoplastic (Electroplating) or chemical vapour deposition technique.
In an embodiment, above-mentioned glossing for example be chemico-mechanical polishing (ChemicalMechanical Polish, CMP) or electrochemical polish (Electrochemical Polish, ECP).
The present invention distributes according to the film thickness that deposits and controls the speed of glossing, therefore can avoid polishing the uneven problem of (Within Wafer) rete in the wafer of back.
The present invention provides a kind of dual-metal inserting technology again, and this technology is to form several dual-metal inserting openings in the dielectric layer of substrate.Then, cover thin film on substrate, this film fills up each dual-metal inserting opening.Afterwards, measure the thickness of several regional films on the substrate, obtaining the distribution of average film thickness, and set the polishing speed prescription according to the distribution of average film thickness.Then, substrate is carried out glossing, up to exposing this dielectric layer according to this polishing speed prescription.
In an embodiment, this dual-metal inserting technology is with reference to a database, sets the polishing speed prescription with the distribution of foundation average film thickness.The preferable polishing speed of the distribution of these several average film thickness of database storage and the distribution of corresponding these average film thickness distributes.
In an embodiment, above-mentioned setting polishing speed Formulation Example is set several zones of corresponding substrate in this way and is put on the pressure of polishing pad, also can be the relative linear velocity of setting substrate and polishing pad.
In an embodiment, above-mentioned dual-metal inserting technology also comprises utilizes the rank process control method, and another substrate is carried out another dual-metal inserting technology.
In an embodiment, the material of above-mentioned film for example is a copper.
In an embodiment, the formation method of film for example is galvanoplastic or chemical vapour deposition technique.
In an embodiment, above-mentioned glossing for example is chemico-mechanical polishing or electrochemical polish.
The present invention controls the parameter of glossing according to the distribution of average film thickness of the film of deposition, and problem such as can avoid that crystal edge copper is residual, excessive polishing and dish are recessed makes the double-metal inlaid structure in wafer Nei Ge district, polishing back have uniform electrical.In addition, the distribution of the average film thickness of a former wafer and polishing speed prescription estimate the distribution and the polishing speed prescription of the average film thickness of follow-up wafer, can make double-metal inlaid structure between wafer have more uniform electrically.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the top view of the wafer 100 that illustrates according to one embodiment of the invention and along the generalized section of hatching I-I ';
Fig. 2 is the control method flow chart of the glossing that illustrates according to one embodiment of the invention;
Fig. 3 illustrates the distribution 104 of the average film thickness of film 102;
Fig. 4 illustrates the content of a part of database 106;
Fig. 5 A to 5B illustrates the manufacturing process generalized section of the dual-metal inserting technology of another embodiment of the present invention.
The main element symbol description
0: initial point
1,2,3,4,5,6: step
100,200: wafer
108,110,112, p1, p2, p3: zone
102,208: film
104, d1, d2, d3: the distribution of average film thickness
106: database
204: dielectric layer
206,206a, 206b: opening
208a: double-metal inlaid structure
R1, r2, r3: preferable polishing speed distributes
Embodiment
Fig. 1 is the top view of the wafer 100 that illustrates according to one embodiment of the invention and along the generalized section of hatching I-I '.Fig. 2 is the control method flow chart of the glossing that illustrates according to one embodiment of the invention.
Please at first carry out step 301: provide wafer 100 simultaneously with reference to Fig. 1 and Fig. 2.Wafer 100 for example is 12 cun wafers.Carry out step 302 then: on wafer 100, cover thin film 102.The material of film 102 for example is a copper.The formation method of film 102 for example is galvanoplastic or chemical vapour deposition technique.
Then, carry out step 303: measure film 102 several regional thickness, with the distribution 104 of the average film thickness that obtains being illustrated in Fig. 3 at wafer 100." distribution of average film thickness " for example is the function of wafer radius length and average film thickness.The distribution 104 of average film thickness for example is that central point, the distance center point 130 millimeters (mm) of wafer 100 located and the average film thickness at 140 millimeters places of distance center point." average film thickness " for example is the mean value of multiple spot thickness in certain distance, also can be the mean value of the repeatedly thickness measurement of single-point thickness.For ease of explanation, the schematic diagram of the distribution of average film thickness all illustrates in the same way, and is two-dimensional pattern.In Fig. 3, transverse axis is represented the radius length of wafer 100, and wherein initial point 0 is represented the position of wafer 100 central points; The longitudinal axis is represented average film thickness.
Then, carry out step 304: comparable data storehouse 106, set polishing speed (Removal Rate) prescription according to the distribution 104 of this average film thickness.Wafer 100 for example is divided into zone 108,110 and 112.Set the polishing speed Formulation Example and set the pressure that puts on polishing pad with respect to the zone on the wafer 100 108,110 with 112 in this way, or set the relative linear velocity of wafer 100 and polishing pad.The preferable polishing speed that has stored the distribution of the distribution of a plurality of average film thickness and corresponding those average film thickness in the database 106 distributes, as shown in Figure 4.Please refer to Fig. 4, it shows a part of database 106 contents, as distribution d1, d2 and d3 and its corresponding preferable polishing speed distribution r1, r2 and the r3 of average film thickness.Certainly, distribute can be more for its corresponding preferable polishing speed of distribution of the stored average film thickness of database 106." polishing speed distribution " for example is the function of polishing speed and wafer radius length.For convenience of description, polishing speed distribution r1, r2 and r3 represent that with two-dimensional pattern wherein transverse axis is represented the wafer radius length of wafer, for example can be divided into regional p1, p2 and p3; The longitudinal axis is represented polishing speed.Step 304 for example is that distribution d1, d2 and the d3 with the average film thickness in the distribution 104 of the average film thickness of actual measurement gained and the database compares, and the distribution 104 of the average film thickness of distribution d1, the d2 of the average film thickness in the storehouse of fetching data and d3 and actual measurement gained is than near the person.For example, be that the average film thickness at the average film thickness at the average film thickness of getting center wafer point, distance center point 130mm place and distance center point 140mm place is near the distribution of average film thickness.Then, adopt corresponding preferable polishing speed to distribute and set the polishing speed prescription.In Fig. 4, the distribution d2 of the average film thickness in the database 106 and the distribution 104 of average film thickness are the most approaching at above-mentioned trizonal average film thickness, therefore adopt corresponding preferable polishing speed distribution r2 to set the polishing speed prescription.The polishing speed of wherein regional p1, p2 and p3 corresponds respectively in the wafer shown in Figure 1 100 zone 108,110 and 112 in the polishing speed of follow-up glossing.
Then, carry out step 305: wafer 100 is carried out glossing according to this polishing speed prescription.This glossing for example be chemico-mechanical polishing (Chemical Mechanical Polish, CMP) or electrochemical polish (Electrochemical Polish, ECP).
In addition, above-mentioned control method comprises that also another wafer is carried out glossing to be controlled.For example a collection of (Lot) wafer is taken a sample (Sample), carry out above-mentioned control method, and then other wafers in this batch wafer are carried out glossing with the polishing speed prescription that sets with sampling to this batch wafer.
In addition, in order to promote production capacity, should manage to reduce above-mentioned sampling frequency.Yet owing to various process conditions can change along with the time, the distribution of the average film thickness of film also can change along with the time, therefore when managing to reduce sampling frequency, must take the variation situation of the distribution of average film thickness into account.In this case, can utilize the distribution of the average film thickness of previous sampling, estimate the distribution of present average film thickness, and set the polishing speed prescription with the distribution of this average film thickness.Perhaps, utilize the polishing speed prescription of previous sampling, estimate the polishing speed prescription that is suitable at present.This type of technology for example is to utilize the rank technology controlling and process (Advanced Process Control, APC) method is reached.
The present invention distributes according to the film thickness that deposits and sets the prescription of polishing, can avoid polishing the uneven problem of (Within Wafer) rete in the wafer of back.In addition, as mentioned above, utilize the distribution or the polishing speed prescription of the average film thickness of previous sampling, estimate the distribution of average film thickness of subsequent wafer or suitable polishing speed prescription, can make that (Wafer to Wafer) has average polishing quality between wafer.
In another embodiment, the control method of above-mentioned glossing can be applied to dual-metal inserting (Dual Damascene) technology.This dual-metal inserting technology below is described.The manufacturing process generalized section of this dual-metal inserting technology is illustrated in Fig. 5 A to 5B.
Please refer to Fig. 2 and Fig. 5 A, at first carry out step 301: provide a wafer 200 with substrate as dual-metal inserting technology.For example be formed with semiconductor element 202 in the wafer 200, and the superiors of wafer 200 have covered one dielectric layer 204.
Then, carry out step 306: in the dielectric layer 204 of wafer 200, form dual-metal inserting opening 206.This dual-metal inserting opening 206 is arranged in dielectric layer 204, and dual-metal inserting opening 206 comprises the predetermined opening 206a of metal plug and the opening 206b of lead of forming, and its manufacture process is well known to those skilled in the art, so locate to repeat no more.
Then, carry out step 302: on this wafer, cover thin film 208.This film 208 fills up these dual-metal inserting openings 206, with the material as metal plug and lead.The material of film 208 for example is a copper.The formation method of film 208 for example is galvanoplastic.
Afterwards, carry out step 303: measure film several regional thickness on wafer, to obtain the distribution of average film thickness.The detailed content of step 303 is in last embodiment explanation.
Then, carry out step 304: the polishing speed prescription is set in the distribution according to this average film thickness.The detailed content of step 304 is also in last embodiment explanation.
Then, please refer to Fig. 5 B, carry out step 305: according to this polishing speed prescription this wafer is carried out glossing up to exposed dielectric layer 204, to form a pair of heavy metal mosaic texture 208a.This glossing for example is chemico-mechanical polishing or electrochemical polish.
According to the explanation of last embodiment, the dual-metal inserting technology of present embodiment also comprises the polishing speed prescription that had got with both, and another substrate is carried out another dual-metal inserting technology.In addition, for example utilize the rank process control method, can utilize the distribution of the average film thickness of previous sampling, estimate the distribution of follow-up average film thickness, and then set another polishing speed prescription, to be applied to dual-metal inserting technology.Perhaps, utilize the employed polishing speed prescription of previous sampling, estimate the follow-up polishing speed prescription that is suitable for.
The present invention controls the parameter of glossing according to the distribution of average film thickness of the film of deposition, and problem such as can avoid that crystal edge copper is residual, excessive polishing and dish are recessed makes the double-metal inlaid structure in wafer Nei Ge district, polishing back have uniform electrical.In addition,, estimate the distribution and the polishing speed prescription of the average film thickness of follow-up wafer with the distribution and the polishing speed prescription of the average film thickness of previous wafer, can make double-metal inlaid structure between wafer have average electrically.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (15)
1. the control method of a glossing comprises:
One wafer is provided, and this wafer has covered a film;
Measure the thickness of this film on several zones of this wafer, to obtain the distribution of an average film thickness;
Set a polishing speed prescription according to the distribution of this average film thickness, wherein setting this polishing speed prescription according to the distribution of this average film thickness is with reference to a database, and the preferable polishing speed of the distribution of a plurality of average film thickness of this database storage and the distribution of corresponding those average film thickness distributes; And
According to this polishing speed prescription this wafer is carried out a glossing.
2. the control method of glossing as claimed in claim 1 is wherein set this polishing speed prescription and is comprised that a plurality of zones of setting this wafer put on the pressure of polishing pad.
3. the control method of glossing as claimed in claim 1 is wherein set this polishing speed prescription and is comprised the relative linear velocity of setting this wafer and polishing pad.
4. the control method of glossing as claimed in claim 1 also comprises and utilizes the rank process control method that another wafer is carried out glossing control.
5. the control method of glossing as claimed in claim 1, wherein this glossing comprises chemico-mechanical polishing or electrochemical polish.
6. the control method of glossing as claimed in claim 1, wherein the material of this film comprises copper.
7. the control method of glossing as claimed in claim 1, wherein the formation method of this film comprises galvanoplastic or chemical vapour deposition technique.
8. dual-metal inserting technology comprises:
One substrate is provided, has covered a dielectric layer on this substrate;
In this dielectric layer, form a plurality of dual-metal inserting openings;
Cover a film on this substrate, this film fills up those dual-metal inserting openings;
Measure the thickness of this film in several zones on the substrate, to obtain the distribution of an average film thickness;
Set a polishing speed prescription according to the distribution of this average film thickness, wherein setting this polishing speed prescription according to the distribution of this average film thickness is with reference to a database, and the preferable polishing speed of the distribution of a plurality of average film thickness of this database storage and the distribution of corresponding those average film thickness distributes; And
According to this polishing speed prescription this substrate is carried out a glossing, up to exposing this dielectric layer.
9. dual-metal inserting technology as claimed in claim 8 is wherein set this polishing speed prescription and is comprised that a plurality of zones of setting this substrate put on the pressure of polishing pad.
10. dual-metal inserting technology as claimed in claim 8 is wherein set this polishing speed prescription and is comprised the relative linear velocity of setting this substrate and polishing pad.
11. dual-metal inserting technology as claimed in claim 8 also comprises another substrate is carried out another dual-metal inserting technology.
12. dual-metal inserting technology as claimed in claim 11 is wherein carried out this another dual-metal inserting technology to this another substrate and is comprised and utilize the rank process control method.
13. dual-metal inserting technology as claimed in claim 8, wherein the material of this film comprises copper.
14. dual-metal inserting technology as claimed in claim 8, wherein the formation method of this film comprises galvanoplastic or chemical vapour deposition technique.
15. dual-metal inserting technology as claimed in claim 8, wherein this glossing comprises chemico-mechanical polishing or electrochemical polish.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2005101375532A CN100477120C (en) | 2005-12-30 | 2005-12-30 | Control method of polishing technology |
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|---|---|---|---|
| CNB2005101375532A CN100477120C (en) | 2005-12-30 | 2005-12-30 | Control method of polishing technology |
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| CN1992178A CN1992178A (en) | 2007-07-04 |
| CN100477120C true CN100477120C (en) | 2009-04-08 |
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| CN101450449B (en) * | 2007-11-30 | 2010-09-29 | 上海华虹Nec电子有限公司 | CMP technique condition adjustment control method |
| US20140015107A1 (en) * | 2012-07-12 | 2014-01-16 | Macronix International Co., Ltd. | Method to improve within wafer uniformity of cmp process |
| CN104952787B (en) * | 2014-03-26 | 2020-03-27 | 盛美半导体设备(上海)股份有限公司 | Automatic radial thickness trimming method |
| CN104846427A (en) * | 2015-05-29 | 2015-08-19 | 南京南车浦镇城轨车辆有限责任公司 | Electrochemical polishing system for enhancing fatigue strength of aluminum alloy welded joint |
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