CN100475446C - Chemical-mechanical polishing equipment and process - Google Patents
Chemical-mechanical polishing equipment and process Download PDFInfo
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- CN100475446C CN100475446C CNB2005101361898A CN200510136189A CN100475446C CN 100475446 C CN100475446 C CN 100475446C CN B2005101361898 A CNB2005101361898 A CN B2005101361898A CN 200510136189 A CN200510136189 A CN 200510136189A CN 100475446 C CN100475446 C CN 100475446C
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Abstract
The chemico-mechanical polishing equipment consists of polishing machine, the first thickness measurer and the second thickness measurer connected to the polishing machine. Both the first thickness measurer and the second thickness measurer are used to complete the in-situ measurement of the thicknesses of the first material and the second material after polishing, and this can decrease the difference of chips in film thickness.
Description
Technical field
The present invention relates to a kind of semiconductor equipment and technology, relate in particular to a kind of chemical-mechanical polisher and CMP process (Chemical Mechanical Polishing, CMP).
Background technology
CMP process is the technology that is usually used in flattening film layer (Planarization) at present, it is by the polishing fluid (Slurry) with suspension polishing particles (Abrasive Particle) and has suitable elasticity (Elasticity) and the polishing pad of hardness (Hardness), carries out relative motion each other to reach the purpose of planarization in wafer surface.
The application category of CMP process is quite extensive, and for instance, metal interconnecting technology is wherein a kind of.In metal interconnecting technology, can in dielectric layer, etch earlier opening earlier, form lining in opening and dielectric layer surface afterwards.Then, on lining, cover the metal level that fills up opening.Then, utilize CMP process to remove opening metal level and lining in addition in regular turn again, in opening, to form intraconnections.
In order effectively to control the resistance of intraconnections, therefore after the wafer of a batch (Lot) is finished above-mentioned glossing, can utilize thickness to measure instrument to the metal level that remained on the wafer or the thickness of dielectric layer measures, and this measurement fed back to the wafer of next batch, with reference as the CMP process of next batch wafer.Yet, because metal level or the measurement of dielectric layer need carry out, must treat that promptly a collection of wafer finish after the polishing on another board, just can measure.Therefore, above-mentioned thickness measures the thickness difference that only limits between effectively control batch and batch (the Lot To Lot), yet wafer for same batch, thickness difference between each wafer there is no method and measures effectively control of acquisition by this, so will cause the not good problem of its resistance stability of metal level on each wafer.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of chemical-mechanical polisher, with the inconsistent problem of thickness between each wafer of effective solution.
Another object of the present invention provides a kind of CMP process, with the inconsistent problem of thickness between each wafer of effective solution.
Another purpose of the present invention provides a kind of CMP process, with the inconsistent problem of thickness between each wafer of effective solution.
A further object of the present invention provides a kind of CMP process, with the inconsistent problem of thickness between each wafer of effective solution.
The present invention proposes a kind of chemical-mechanical polisher, this chemical-mechanical polisher is to measure instrument by polishing machine platform, first thickness measurement instrument and second thickness at least to be constituted, wherein first thickness measurement instrument is to be connected with polishing machine platform, and second thickness measurement instrument is to be connected with polishing machine platform.And it is mode with original position that this first thickness measures instrument, in order to measure the thickness of one first material layer that a wafer remained behind glossing; It is mode with original position that this second thickness measures instrument, in order to measure the thickness of one second material layer that same wafer remained behind glossing.This first thickness measures instrument and this second thickness measurement instrument is that the thickness of this first material layer on the same wafer and the thickness of this second material layer are noted respectively, and will be fed back to next wafer use by the burnishing parameters of this two thickness gained.
First thickness measures instrument and second thickness measures instrument because chemical-mechanical polisher of the present invention except including polishing machine platform, also includes.Therefore, wafer after the polishing can utilize this first thickness to measure instrument and second thickness measurement instrument and measure in original position, and measurement is fed back (Feedback) give next wafer or another polishing step of same wafer, so can adjust burnishing parameters by instant (Real-Time), reduce the thickness difference between each wafer.
The present invention proposes a kind of CMP process, this technology is that wafer is provided earlier, and be formed with first material layer on the wafer, and be formed with lining, and on lining, be coated with second material layer that fills up opening at the opening and first material surface with at least one opening.Then, carry out first polishing step, remove opening second material layer in addition, expose out up to lining, and carry out first measurement step, measure the thickness of second material layer that remains in the mode of original position.Afterwards, carry out second polishing step, remove the opening lining and second material layer in addition, expose out up to first material layer, and carry out second measurement step, measure the thickness of first material layer that remains in the mode of original position.The thickness of this first material layer and the pairing burnishing parameters of thickness of this second material layer are fed back to next wafer use.
The present invention proposes another CMP process, this technology is that the multi-disc wafer is provided earlier, and be formed with first material layer on each wafer, and be formed with lining, and on lining, be coated with second material layer that fills up opening at the opening and first material surface with at least one opening.Then, carry out first polishing step of i wafer, remove opening second material layer in addition, expose out up to lining, and carry out first measurement step, measure the thickness of second material layer that remains, to obtain first burnishing parameters in the mode of original position.Afterwards, carry out second polishing step of i wafer, remove the opening lining and second material layer in addition, expose out up to first material layer, and carry out second measurement step in the mode of original position, measure the thickness of first material layer that remains, to obtain second burnishing parameters.Then, carry out first polishing step and second polishing step of i+1 wafer, and first burnishing parameters and second burnishing parameters that polish i wafer gained can feed back respectively in first polishing step and second polishing step of i+1 wafer.
The present invention proposes another kind of CMP process, this technology is that the multi-disc wafer is provided earlier, and be formed with first material layer on each wafer, and be formed with lining, and on lining, be coated with second material layer that fills up opening at the opening and first material surface with at least one opening.Then, carry out first polishing step of i wafer, remove opening second material layer in addition, expose out up to lining, and carry out first measurement step, measure the thickness of second material layer that remains, to obtain first burnishing parameters.Afterwards, carry out second polishing step of i wafer, remove the opening lining and second material layer in addition, expose out up to first material layer, and carry out one second measurement step in the mode of original position, measure the thickness of this first material layer that remains, and obtain one second burnishing parameters, wherein when carrying out second polishing step, first burnishing parameters can feed back in wherein.Carry out this first polishing step and this second polishing step of i+1 wafer, and this first burnishing parameters and this second burnishing parameters that polish i wafer gained can feed back respectively in this first polishing step and this second polishing step of i+1 wafer.
Because glossing of the present invention can feed back to the burnishing parameters of measurement step gained next wafer or feed back to another polishing step of same wafer, therefore can adjust burnishing parameters immediately, thereby reduce the thickness difference between each wafer.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the flow chart according to the CMP process in a kind of metal interconnecting technology of one embodiment of the present invention;
Fig. 2 A to Fig. 2 C is the wafer cross schematic diagram of gained when carrying out the CMP process of Fig. 1;
Fig. 3 is the flow chart according to another CMP process in a kind of metal interconnecting technology of one embodiment of the present invention.
The main element symbol description
100,102,104,106,300,302,304: step numbers
200: wafer 202: opening
204,204a: dielectric layer 206: contact window
208: irrigation canals and ditches 210,210a: lining
212,212a, 212b: metal level T1, T2: thickness
The specific embodiment
Chemical-mechanical polisher of the present invention is to measure instrument by polishing machine platform, first thickness measurement instrument and second thickness at least to be constituted, and wherein first thickness measurement instrument is to be connected with polishing machine platform, and second thickness measurement instrument is to be connected with polishing machine platform.
In a preferred embodiment, it for example is that metal thickness measures instrument that first thickness measures instrument, and it for example is that dielectric material thickness measures instrument that second thickness measures instrument.Wherein, it for example is to utilize the laser can be in the difference back wave of (for example: metal level and dielectric interface place) generation at the interface that metal thickness measures instrument, carry out thickness and measure, and dielectric material thickness measurement instrument for example is to utilize optical principles such as refraction, reflection to carry out thickness to measure.
Particularly, above-mentioned first thickness measurement instrument and second thickness measurement instrument can measure the thickness of first material layer that is remained behind the glossing and the thickness of second material layer respectively in the mode of original position.More specifically, first thickness measures instrument and second thickness measurement instrument can be noted first material layer after the polishing and the thickness of second material layer respectively, and the burnishing parameters of two thickness gained feeds back to next wafer thus, or feeds back to another polishing step of same wafer.In a preferred embodiment, the first above-mentioned material layer for example is a metal level, and second material layer for example is a dielectric layer.
First thickness measures instrument and second thickness measures instrument because chemical-mechanical polisher of the present invention except including polishing machine platform, also includes.Therefore, wafer after the polishing can utilize this first thickness to measure instrument and second thickness measurement instrument and measure in original position, and measurement is fed back to another polishing step of next wafer or same wafer, so can reduce the thickness difference between each wafer by the instant burnishing parameters of adjusting.
It below is the CMP process that explanation utilizes above-mentioned chemical-mechanical polisher to carry out.In the following embodiments, be the application that chemical-mechanical polisher of the present invention and CMP process are described with metal interconnecting technology, so it is not in order to limiting application category of the present invention, and the present invention also can be applicable to other technology of filling out mouthful.In metal interconnecting technology, first material layer is meant metal level, and second material layer is meant dielectric layer.
Fig. 1 is the flow chart that illustrates according to the CMP process in a kind of metal interconnecting technology of one embodiment of the present invention.Fig. 2 A to Fig. 2 C illustrates when carrying out the CMP process of Fig. 1, the wafer cross schematic diagram of gained.
Please multi-disc wafer 200 be provided, and be formed with dielectric layer 204 (step 100) on each wafer 200 simultaneously with reference to Fig. 1 and Fig. 2 A with at least one opening 202.In a preferred embodiment, be formed with a plurality of component structures (not illustrating) on the wafer 200, and opening 202 to expose part be a conductive region, this conductive region for example is source/drain regions, grid, internal connection-wire structure etc.In a preferred embodiment, opening 202 is made of contact window 206 that is positioned at the below and the irrigation canals and ditches 208 that are positioned at the top.
Then, please continue A, form lining 210 in opening 202 and dielectric layer 204 surfaces, and on lining 210, cover the metal level 212 that fills up opening 202 with reference to Fig. 2.Wherein, the material of lining 210 for example is titanium nitride or other suitable materials, and the material of metal level 212 for example is tungsten or other suitable conductive material, and the formation method of metal level 212 for example is to carry out chemical vapor deposition method.
Then, please carry out first polishing step of i wafer 200, remove opening 202 metal level 212 in addition, expose out up to lining 210, and form metal level 212a simultaneously with reference to Fig. 1 and Fig. 2 B.And, after the metal level 212 beyond removing opening 202, be to carry out first measurement step in the mode of original position, measure the thickness T 1 of the metal level 212a that remains, to obtain first burnishing parameters (step 102).Wherein, step 102 for example is to carry out in chemical-mechanical polisher of the present invention, promptly utilizes polishing machine platform wherein to carry out metal level 212 polishings, and utilizes metal thickness wherein to measure the thickness measurement that instrument carries out metal level 212a.In addition, in another preferred embodiment, step 102 also can measure instrument in only having polishing machine platform and metal thickness, does not carry out and have in the chemical-mechanical polisher that dielectric material thickness measures instrument.
Particularly, in step 102, by the first measurement step measurement to thickness T 1 can derive the metal layer thickness that first polishing step is removed, and the time that polishing is spent in the cooperation, and then derive the parameters such as polishing speed of first polishing step, perhaps utilize the thickness T 1 that is measured to derive the resistance of metal level 212a.
Afterwards, please carry out second polishing step of i wafer 200, remove opening 202 metal level 212a and lining 210 in addition, expose out up to dielectric layer 204, and form metal level 212b and lining 210a simultaneously with reference to Fig. 1 and Fig. 2 C.Because when carrying out second polishing step, the dielectric layer 204 of part also can be removed, and therefore can form dielectric layer 204a.And, after the metal level 212a and lining 210 beyond removing opening 202, be to carry out second measurement step in the mode of original position, measure the thickness T 2 of the dielectric layer 204a that remains, to obtain second burnishing parameters (step 104).Wherein, step 104 for example is to carry out in chemical-mechanical polisher of the present invention, promptly utilize polishing machine platform wherein, polishing fluids different with step 102 in the cooperation carry out the polishing of metal level 212a and lining 210, and utilize dielectric material thickness wherein to measure the thickness measurement that instrument carries out dielectric layer 204a.In addition, in another preferred embodiment, step 104 also can measure instrument in only having polishing machine platform and dielectric material thickness, does not carry out and have in the chemical-mechanical polisher that metal thickness measures instrument.
Particularly, in step 104, by the second measurement step measurement to thickness T 2 can derive the parameters such as polishing speed of second polishing step equally, and utilize the thickness T 2 that is measured also can derive metal layer thickness, thereby learn the resistance of metal level.
In a preferred embodiment, after the i wafer is finished first polishing step and second polishing step, also can be with resultant burnishing parameters, feed back to the i+1 wafer, with by the instant burnishing parameters of adjusting, reduce the thickness difference between the wafer of front and back, it is described in detail as follows.
Please continue with reference to Fig. 1, after the i wafer is finished first polishing step (step 102) and second polishing step (step 104), carry out first polishing step and second polishing step (step 106) of i+1 wafer.Particularly, when first polishing step that carries out the i+1 wafer and second polishing step (step 106), the polishing time that is determined by first burnishing parameters of polishing i wafer gained and second burnishing parameters can feed back in wherein.Thus, carry out the metal level on the step 106 i+1 wafer afterwards, its thickness can be similar to the metal level on the i wafer, therefore can promote the resistance stability between the wafer.
In addition, when first polishing step that carries out the i+1 wafer and second polishing step (step 106), can carry out the 3rd measurement step and the 4th measurement step in the mode of original position too, metal level that measurement remains and medium thickness, and first polishing step and second polishing step that the burnishing parameters of gained feeds back to the i+2 wafer used.In other words, each wafer can immediate feedback use for next wafer through the burnishing parameters of polishing step gained, or after collecting the burnishing parameters of multi-disc wafer, analyzes by statistics, feeds back to follow-up wafer and uses.Therefore, utilize method of the present invention can effectively reduce thickness difference between the wafer, thereby improve the resistance stability between its sheet of metal level and the sheet.
In another preferred embodiment of the present invention, after carrying out above-mentioned steps 100, polishing that it is follow-up and thickness measurement step are as described below.
Please refer to Fig. 2 B and Fig. 3, after carrying out above-mentioned steps 100, carry out first polishing step of i wafer 200, remove opening 202 metal level 212 in addition, expose out up to lining 210, and form metal level 212a.And, after the metal level 212 beyond removing opening 202, carry out first measurement step, measure the thickness T 1 of the metal level 212a that remains, to obtain first burnishing parameters (step 300).Wherein, step 300 for example is to carry out in chemical-mechanical polisher of the present invention, promptly utilizes polishing machine platform wherein to carry out the polishing of metal level 212, and utilizes metal thickness wherein to measure the thickness measurement that instrument carries out metal level 212a.In addition, in another preferred embodiment, step 300 also can measure instrument in only having polishing machine platform and metal thickness, does not carry out and have in the chemical-mechanical polisher that dielectric material thickness measures instrument.In addition, in another preferred embodiment, step 300 for example is respectively at the polishing of carrying out metal level 212 in the chemical-mechanical polisher that only has polishing machine platform, and carries out thickness T 1 measurement of metal level 212a in another measuring instrument.
Afterwards, please refer to Fig. 2 C and Fig. 3, carry out second polishing step of i wafer 200, remove opening 202 metal level 212a and lining 210 in addition, expose out up to dielectric layer 204, and form metal level 212b and lining 210a.Because when carrying out second polishing step, the dielectric layer 204 of part also can be removed, and therefore can form dielectric layer 204a.And, after the metal level 212a and lining 210 beyond removing opening 202, be to carry out second measurement step in the mode of original position, measure the thickness T 2 of the dielectric layer 204a that remains, to obtain second burnishing parameters (step 302).Particularly, in this step 302, the time of the polishing of second polishing step is that first burnishing parameters by gained in step 300 determines out.Thus, its thickness of metal level 212b that is remained can obtain to control effectively.
Please continue with reference to Fig. 3, in a preferred embodiment, after the i wafer is finished first polishing step (step 300) and second polishing step (step 302), can also carry out first polishing step and second polishing step (step 304) of i+1 wafer.Particularly, when carrying out second polishing step (step 304) of i+1 wafer, by second burnishing parameters of polishing i wafer gained and first burnishing parameters of polishing i+1 wafer gained, and the polishing time that determines jointly, can feed back in wherein.Thus, carry out the metal level on the step 304 i+1 wafer afterwards, its thickness can be similar to the metal layer thickness on the i wafer, therefore can promote the resistance stability between the wafer.
In addition, in this embodiment, when carrying out second polishing step (step 304) of i+1 wafer, can carry out the 3rd measurement step in the mode of original position too, the medium thickness that measurement remains, and second polishing step that the burnishing parameters of gained feeds back to the i+2 wafer used.In other words, each wafer can immediate feedback use for next wafer through the burnishing parameters of polishing step gained, or after collecting the burnishing parameters of multi-disc wafer, analyzes by statistics, feeds back to follow-up wafer and uses.Therefore, utilize method of the present invention can effectively reduce thickness difference between the wafer, thereby improve the resistance stability between its sheet of metal level and the sheet.
In sum, the present invention has following advantage at least:
1. first thickness measures instrument and second thickness measures instrument because chemical-mechanical polisher of the present invention except including polishing machine platform, also includes.Therefore, wafer after the polishing can utilize this first thickness to measure instrument and second thickness measurement instrument and measure in original position, and measurement is fed back to another polishing step of next wafer or same wafer, so can reduce the thickness difference between each wafer by the instant burnishing parameters of adjusting.
2. because glossing of the present invention can feed back to the burnishing parameters of measurement step gained next wafer or feed back to another polishing step of same wafer, therefore can adjust burnishing parameters immediately, thereby reduce the thickness difference between each wafer.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.
Claims (17)
1. chemical-mechanical polisher comprises at least:
One polishing machine platform;
One first thickness measures instrument, is connected with this polishing machine platform; And
One second thickness measures instrument, is connected with this polishing machine platform,
Wherein to measure instrument be mode with original position for this first thickness, in order to measure the thickness of one first material layer that a wafer remained behind glossing; This second thickness measurement instrument is the mode with original position, in order to measure the thickness of one second material layer that same wafer remained behind glossing, this first thickness measures instrument and this second thickness measurement instrument is that the thickness of this first material layer on the same wafer and the thickness of this second material layer are noted respectively, and will be fed back to next wafer use by the burnishing parameters of this two thickness gained.
2. polissoir as claimed in claim 1, wherein one of them of this first thickness measurement instrument and this second thickness measurement instrument is that metal thickness measures instrument, and another is that dielectric material thickness measures instrument.
3. polissoir as claimed in claim 1, wherein this first thickness measures instrument and will measure another polishing step that instrument will feed back to same wafer by the burnishing parameters of the thickness gained of this second material layer by the burnishing parameters of the thickness gained of this first material layer or this second thickness and use.
4. CMP process comprises:
One wafer is provided, has been formed with one first material layer on this wafer, and be formed with a lining, and on this lining, be coated with one second material layer that fills up this opening at this opening and this first material surface with at least one opening;
Carry out one first polishing step, remove this opening this second material layer in addition, expose out up to this lining, and carry out one first measurement step, measure the thickness of this second material layer that remains in the mode of original position;
Carry out one second polishing step, remove this opening this lining and this second material layer in addition, expose out up to this first material layer, and carry out one second measurement step, measure the thickness of this first material layer that remains in the mode of original position; And
The thickness of this first material layer and the pairing burnishing parameters of thickness of this second material layer are fed back to next wafer use.
5. CMP process as claimed in claim 4, wherein this first material layer comprises dielectric layer, and this second material layer comprises metal level.
6. CMP process as claimed in claim 4, wherein this opening is made of contact window that is positioned at the below and the irrigation canals and ditches that are positioned at the top.
7. CMP process comprises:
The multi-disc wafer is provided, and respectively has been formed with one first material layer on this wafer, and be formed with a lining, and on this lining, be coated with one second material layer that fills up this opening at this opening and this first material surface with at least one opening;
Carry out one first polishing step of i wafer, remove this opening this second material layer in addition, expose out up to this lining, and carry out one first measurement step in the mode of original position, the thickness of this second material layer that measurement remains is to obtain one first burnishing parameters;
Carry out one second polishing step of i wafer, remove this opening this lining and this second material layer in addition, expose out up to this first material layer, and carry out one second measurement step in the mode of original position, the thickness of this first material layer that measurement remains is to obtain one second burnishing parameters; And
Carry out this first polishing step and this second polishing step of i+1 wafer, and this first burnishing parameters and this second burnishing parameters that polish i wafer gained can feed back respectively in this first polishing step and this second polishing step of i+1 wafer.
8. CMP process as claimed in claim 7, wherein when carrying out this first polishing step of i+1 wafer, also comprise in the mode of original position and carry out one the 3rd measurement step, the thickness of this second material layer that measurement remains, to obtain one the 3rd burnishing parameters, and when carrying out this first polishing step of i+2 wafer, the 3rd burnishing parameters can feed back in wherein.
9. CMP process as claimed in claim 7, wherein when carrying out this second polishing step of i+1 wafer, also comprise in the mode of original position and carry out one the 4th measurement step, the thickness of this first material layer that measurement remains, to obtain one the 4th burnishing parameters, and when carrying out this second polishing step of i+2 wafer, the 4th burnishing parameters can feed back in wherein.
10. CMP process as claimed in claim 7, wherein this first material layer comprises dielectric layer, and this second material layer comprises metal level.
11. CMP process as claimed in claim 7, wherein this opening is made of contact window that is positioned at the below and the irrigation canals and ditches that are positioned at the top.
12. a CMP process comprises:
The multi-disc wafer is provided, and respectively has been formed with one first material layer on this wafer, and be formed with a lining, and on this lining, be coated with one second material layer that fills up this opening at this opening and this first material surface with at least one opening;
Carry out one first polishing step of i wafer, remove this opening this second material layer in addition, expose out up to this lining, and carry out one first measurement step, measure the thickness of this second material layer that remains, to obtain one first burnishing parameters;
Carry out one second polishing step of i wafer, remove this opening this lining and this second material layer in addition, expose out up to this first material layer, and carry out one second measurement step in the mode of original position, the thickness of this first material layer that measurement remains, obtaining one second burnishing parameters, and when carrying out this second polishing step, this first burnishing parameters can feed back in wherein; And
Carry out this first polishing step and this second polishing step of i+1 wafer, and this first burnishing parameters and this second burnishing parameters that polish i wafer gained can feed back respectively in this first polishing step and this second polishing step of i+1 wafer.
13. CMP process as claimed in claim 12, wherein when carrying out this second polishing step of i+1 wafer, this second burnishing parameters that polishes i wafer gained and this first burnishing parameters of polishing i+1 wafer gained can feed back jointly in wherein.
14. want 13 described CMP process as right, wherein when carrying out this second polishing step of i+1 wafer, also comprise in the mode of original position and carry out one the 3rd measurement step, the thickness of this first material layer that measurement remains, to obtain one the 3rd burnishing parameters, and when carrying out this second polishing step of i+2 wafer, the 3rd burnishing parameters can feed back in wherein.
15. CMP process as claimed in claim 12, wherein this first measurement step is to carry out in the original position mode.
16. CMP process as claimed in claim 12, wherein this first material layer comprises dielectric layer, and this second material layer comprises metal level.
17. CMP process as claimed in claim 12, wherein this opening is made of contact window that is positioned at the below and the irrigation canals and ditches that are positioned at the top.
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| CNB2005101361898A CN100475446C (en) | 2005-12-20 | 2005-12-20 | Chemical-mechanical polishing equipment and process |
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