CN100474486C - Manufacturing method for front substrate of plasma display screen - Google Patents
Manufacturing method for front substrate of plasma display screen Download PDFInfo
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- CN100474486C CN100474486C CNB2006100430575A CN200610043057A CN100474486C CN 100474486 C CN100474486 C CN 100474486C CN B2006100430575 A CNB2006100430575 A CN B2006100430575A CN 200610043057 A CN200610043057 A CN 200610043057A CN 100474486 C CN100474486 C CN 100474486C
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- motherboard
- electrode pattern
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Abstract
A method for preparing front base plate of plasma display screen includes photoetching electrode pattern of collecting electrode with hole or T form collecting electrode on front glass base plate, applying a photoetching method to prepare black bar on front glass base plate set with electrode pattern, coating dielectric layer and evaporating protective layer on collecting electrode pattern prepared with black bar.
Description
Technical field
The invention belongs to the plasma panel technical field of flat panel display, be specifically related to the manufacture method of prebasal plate in a kind of plasma panel.
Background technology
In recent years, the surface discharge type AC type plasma displaying panel (being called PDP) as big and thin color image display device has become the popular consumer goods of family expenses gradually.
Owing to will guarantee pixel aperture ratio and make the discharge firing voltage minimum, the chromatic alternating-current plasma panel of this three-electrode surface discharge relies on to some extent to transparency electrode ito thin film layer when discharge, but this transmitance of sputter transparency electrode ito thin film is good and the thin layer cost of conduction is higher.
In order not influence pixel aperture ratio and to guarantee that the discharge firing voltage is minimum, will make the bus electrode that confluxes satisfy certain width, also to make simultaneously the x electrode and the y electrode of the bus electrode that confluxes reach best distance, but at present because photonasty is confluxed the material limits of bus electrode to have caused the limitation of technology be the difficult problem of current maximum.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of front substrate of plasma display screen, this method is guaranteeing under the minimum condition of pixel aperture ratio and discharge firing voltage, is solving in the prior art owing to use the transparency electrode ito thin film to cause the cost problem of higher.
The technical solution adopted in the present invention is, the manufacture method of front substrate of plasma display screen is carried out according to the following steps:
At first with the electrode pattern photoetching of porose bus electrode or T shape bus electrode on front glass substrate;
On the front glass substrate of existing electrode pattern, make secret note with photoetching process again;
At last making coating media layer and evaporation protective layer on the bus electrode figure of secret note;
Described electrode pattern photoetching with porose bus electrode or T shape bus electrode may further comprise the steps on front glass substrate:
When adopting porose bus electrode
Printing photosensitive paste after at first will cleaning through the front glass substrate of annealing in process, drying with the motherboard A exposure that is loaded with the hole bus electrode figure after being decomposed, is developed then, is burnt till;
To after above-mentioned processing, there be the front glass substrate of part bus electrode figure to clean once more, the printing photosensitive paste, drying with the motherboard B exposure that is loaded with the hole bus electrode figure after being decomposed, is developed then, is burnt till, and promptly finishes complete bus electrode and makes;
Or when adopting T shape bus electrode
Printing photosensitive paste after at first will cleaning through the front glass substrate of annealing in process, drying with the motherboard C exposure that is loaded with the T shape bus electrode figure after being decomposed, is developed then, is burnt till;
To after above-mentioned processing, there be the front glass substrate of part bus electrode figure to clean once more, the printing photosensitive paste, drying with the motherboard D exposure that is loaded with the T shape bus electrode figure after being decomposed, is developed then, is burnt till, and promptly finishes complete bus electrode and makes.
Characteristics of the present invention also are:
The electrode pattern of motherboard A consists of the porose x of the confluxing electrode pattern and the porose y of the confluxing electrode pattern of zigzag of rectangle, the spacing of the porose x of confluxing electrode and the porose y of confluxing electrode is ha, the electrode pattern of described motherboard B consists of the porose y of the confluxing electrode pattern and the porose x of the confluxing electrode pattern of zigzag of rectangle, the spacing of the porose y of confluxing electrode and the porose x of confluxing electrode is hb, ha equates that with hb value is 80 μ m～160 μ m.
The electrode pattern of motherboard C consists of the x electrode pattern and the T shape y electrode pattern of rectangle, the spacing of the x electrode of rectangle and T shape y electrode is ha, the electrode pattern of described motherboard D consists of the y electrode pattern and the T shape x electrode pattern of rectangle, the spacing of the y electrode of rectangle and T shape x electrode is hb, ha equates that with hb value is 80 μ m～160 μ m.
Method of the present invention does not change the discharge principle of three-electrode surface discharge color AC plasma displays screen, do not influence under the minimum situation of pixel aperture ratio and assurance discharge firing voltage, omit transparent ITO electrode, adopt porose bus electrode or the T shape electrode of confluxing, porose bus electrode or the T shape electrode method with the photoetching of two motherboards substeps is formed, making electrode pattern is the stack of figure that Twi-lithography forms, width between may command x electrode and the y electrode also can be controlled the pore size of x electrode and y electrode.Avoid the process limitations that material limits caused, guaranteed aperture ratio of pixels, reduced firing voltage, reduced cost.
Description of drawings
Fig. 1 is the partial cross section figure that prebasal plate of the present invention adopts porose bus electrode;
Fig. 2 is that prebasal plate of the present invention adopts the x electrode of porose bus electrode and the partial plan of y electrode;
Fig. 3 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard A of the x electrode of porose bus electrode and y electrode;
Fig. 4 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard B of the x electrode of porose bus electrode and y electrode;
Fig. 5 is that prebasal plate of the present invention adopts the x electrode of T shape bus electrode and the partial plan of y electrode;
Fig. 6 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard C of the x electrode of T shape bus electrode and y electrode;
Fig. 7 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard D of the x electrode of T shape bus electrode and y electrode;
Fig. 8 is that the present invention adopts in the porose bus electrode manufacturing process substrate and motherboard to the method for position schematic diagram, wherein, a is the motherboard A after the x electrode of porose bus electrode and y electrode are decomposed, b is the x electrode of porose bus electrode and y electrode be decomposed back motherboard A exposure, the figure after developing, c is the motherboard B after the x electrode of porose bus electrode and y electrode are decomposed, and d is the x electrode of porose bus electrode and the y electrode is decomposed after the figure behind the Twi-lithography.
Among the figure; 01. pixel; 30. front glass substrate; 32. the porose x electrode that confluxes, the 33. porose y electrodes that conflux, 34. secret notes; 35. dielectric layer; 36. diaphragm, 42.T shape x electrode, 43.T shape y electrode; 321A.A the part x electrode pattern of motherboard; 331A.A the part y electrode pattern of motherboard, the part x electrode pattern of 322B.B motherboard, the part y electrode pattern of 332B.B motherboard; 421C.C the part x electrode pattern of motherboard; 431C.C the part y electrode pattern of motherboard, the part x electrode pattern of 422D.D motherboard, the part y electrode pattern of 432D.D motherboard.
Embodiment
The present invention is described in detail below in conjunction with the drawings and specific embodiments.
The manufacture method of front substrate of plasma display screen of the present invention, carry out according to the following steps:
At first, omit transparency electrode, adopt porose bus electrode or T shape bus electrode, with the electrode pattern photoetching of porose bus electrode or T shape bus electrode on front glass substrate 30;
When adopting porose bus electrode
Printing photosensitive paste after at first will cleaning through the front glass substrate 30 of annealing in process, dry, with the motherboard A exposure that is loaded with the bus electrode figure after being decomposed, develop then, burn till, the electrode pattern of motherboard A consists of the porose x of the confluxing electrode 321A figure and the porose y of the confluxing electrode of the zigzag 331A figure of rectangle, and the spacing of the porose x of confluxing electrode 321A and the porose y of confluxing electrode 331A is ha;
To after above-mentioned processing, there be the front glass substrate 30 of part bus electrode figure to clean once more, the printing photosensitive paste, dry, with the motherboard B exposure that is loaded with the bus electrode figure after being decomposed, develop then, burn till, the electrode pattern of motherboard B consists of the porose y of the confluxing electrode 332B figure and the porose x of the confluxing electrode of the zigzag 322B figure of rectangle, the spacing of the porose y of confluxing electrode 332B and the porose x of confluxing electrode 322B is hb, control ha equates with hb, value is 80 μ m～160 μ m, promptly finishes complete bus electrode and makes;
Or when adopting T shape bus electrode
Printing photosensitive paste after at first will cleaning through the front glass substrate 30 of annealing in process, dry, with the motherboard C exposure that is loaded with the bus electrode figure after being decomposed, develop then, burn till, the electrode pattern of motherboard C consists of the x electrode 421C figure and the T shape y electrode 431C figure of rectangle, and the spacing of the x electrode 421C of rectangle and T shape y electrode 431C is ha;
To after above-mentioned processing, there be the front glass substrate 30 of part bus electrode figure to clean once more, the printing photosensitive paste, dry, with the motherboard D exposure that is loaded with the bus electrode figure after being decomposed, develop then, burn till, the electrode pattern of motherboard D consists of the y electrode 432D figure and the T shape x electrode 422D figure of rectangle, the spacing of the y electrode 432D of rectangle and T shape x electrode 422D is hb, promptly finish complete bus electrode and make, control ha equates that with hb value is 80 μ m～160 μ m;
On the front glass substrate 30 of existing electrode pattern, make secret note 34 with photoetching process again;
Last making coating media layer 35 and evaporation protective layer 36 on the bus electrode figure of secret note 34, promptly finish the making of prebasal plate.
The prebasal plate of the present invention that Fig. 1 shows adopts the partial cross section figure of porose bus electrode.Front glass substrate 30 is provided with many to the porose x of confluxing electrode 32 and y electrode 33 and secret note 34, the porose x of confluxing electrode 32 is by the part x electrode pattern 321A that utilizes the photoetching of A motherboard and utilize the part x electrode pattern 322B of B motherboard photoetching to be formed by stacking, and the porose y of confluxing electrode 33 is by the part x electrode pattern 331A that utilizes the photoetching of A motherboard and utilize the part x electrode pattern 332B of B motherboard photoetching to be formed by stacking.
Fig. 2 is that prebasal plate of the present invention adopts the x electrode of porose bus electrode and the partial plan of y electrode.A pixel 01 comprises the porose x of confluxing electrode 32 and the porose y of confluxing electrode 33, and the spacing of the porose x of confluxing electrode 32 and the porose y of confluxing electrode 33 is h.
Fig. 3 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard A of the x electrode of porose bus electrode and y electrode.A motherboard figure comprises part y electrode pattern and part x electrode pattern, and the 321A of mark and 331A are the exposure part, and the spacing between the part y electrode pattern 331A of the part x electrode pattern 321A of A motherboard and A motherboard is ha.
Fig. 4 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard B of the x electrode of porose bus electrode and y electrode.B motherboard figure comprises part y electrode pattern and part x electrode pattern, and the spacing between the part y electrode pattern 332B of the part x electrode pattern 322B of B motherboard and B motherboard is hb.
The present invention adopts Twi-lithography to form the method for stack figure the porose bus of confluxing electrode pattern, its objective is the x electrode 32 that to control the bus electrode that confluxes and the width between the y electrode 33, also can control the pore size of the porose x of confluxing electrode 32 and the porose y of confluxing electrode 33.By changing the width h of the porose x of confluxing electrode 32 and the porose y of confluxing electrode 33, just control the width of ha and hb, ha is the spacing between the part y electrode pattern 331A of the part x electrode pattern 321A of A motherboard and A motherboard, hb is the spacing between the part y electrode pattern 332B of the part x electrode pattern 322B of B motherboard and B motherboard, ha and hb different and equidistant variation according to the resolution of do screen, ha and hb keep equating, if increase the width h of x electrode 32 and y electrode 33, will increase the distance h a of the part y electrode pattern 331A of the part x electrode pattern 321A of A motherboard and A motherboard, increase the distance h b of the part y electrode pattern 332B of the part x electrode pattern 322B of B motherboard and B motherboard simultaneously; If increase the pore size of x electrode 32 and y electrode 33 and guarantee that h is constant, also to increase the distance h a of the part y electrode pattern 331A of the part x electrode pattern 321A of A motherboard and A motherboard, increase the distance h b of the part y electrode pattern 332B of the part x electrode pattern 322B of B motherboard and B motherboard simultaneously.Ha and hb also are subjected to the restriction of h simultaneously, and h obtains optimum value by Paschen's law, and the value that just with XGA is example experiment conclusion ha and hb is 80 μ m～160 μ m.
This method has been avoided the process limitations that material limits caused, and that is to say to utilize the method for substep photoetching can make the width h of the pore size of the porose x of confluxing electrode 32 and the porose y of confluxing electrode 33, the porose x of confluxing electrode 32 and the porose y of confluxing electrode 33 reach any number in 20 μ m～80 μ m intervals.Guarantee aperture ratio of pixels, reduced firing voltage, reduced cost.
Fig. 5 is that prebasal plate of the present invention adopts the x electrode of T shape bus electrode and the partial plan of y electrode.Comprise T shape x electrode 42 and T shape y electrode 43.
Fig. 6 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard C of the x electrode of T shape bus electrode and y electrode.Motherboard C figure comprises the part x electrode pattern 421C of C motherboard and the part y electrode pattern 431C of C motherboard.
Fig. 7 is that prebasal plate of the present invention adopts the be decomposed partial plan of back motherboard D of the x electrode of T shape bus electrode and y electrode.Motherboard D figure comprises the part x electrode pattern 422D of D motherboard and the part y electrode pattern 432D of D motherboard.
T shape bus electrode is identical with porose bus electrode manufacture method, and just motherboard A and motherboard B are porose bus electrode figure, and motherboard C and motherboard D are T shape bus electrode figure.
Fig. 8 is that the present invention adopts in the porose bus electrode manufacturing process substrate and motherboard to the method for position schematic diagram.A is the motherboard A after the x electrode of a pair of porose bus electrode and y electrode are decomposed, hollow cross is the alignment mark on the motherboard, visuals as shown in Figure 3, hollow cross partly is exposure, just can from then on pass through in the exposure time, be radiated at the conflux silver paste surface of BUS electrode of photonasty on the front glass substrate 30, make its curing.After the substrate development after this exposure, form the conflux BUS figure corresponding with motherboard A, on four jiaos of substrate, form the solid cross alignment mark shown in Fig. 8 b simultaneously, pass through firing process again, contraposition is prepared when exposing with motherboard B for the second time.
B is be decomposed a part of figure of a pair of imperfect bus electrode after back motherboard A exposure, the photoetching first time after developing of the x electrode of porose bus electrode and y electrode, and wherein four jiaos solid cross is the alignment mark on the substrate.
C is the motherboard B after the x electrode of porose bus electrode and y electrode are decomposed, Fig. 8 b substrate surface is republished the photosensitive silver paste of one deck, the cross alignment mark that guarantees four jiaos of substrate Fig. 8 b is exposed, behind drying substrates, c graph exposure with motherboard B, this moment, the CCD alignment system of exposure machine can be through the solid cross register guide on the hollow cross alignment mark searching substrate of motherboard B, automatically compensation after searching is finished, accurately begin exposure after the contraposition, light is through as shown in Figure 4 exposure position 322B, 332B is radiated on the photosensitive silver paste of one deck of Fig. 8 b substrate surface printing, develop, after burning till, the figure that Twi-lithography forms overlaps accurately according to technological parameter, form the desired BUS figure that confluxes, shown in Fig. 8 d.
D is that the x electrode of porose bus electrode and y electrode are decomposed after the figure of a pair of complete bus electrode behind the Twi-lithography.The BUS electrode pattern that confluxes just shown in Figure 4.
If the motherboard of making is a centrosymmetric image, then motherboard A and motherboard B get final product with one, for example use the A motherboard, the photoetching first time, and when the second time photoetching motherboard A clockwise Rotate 180 degree angle being exposed so gets final product.
Claims (3)
1. the manufacture method of front substrate of plasma display screen is characterized in that, this method is carried out according to the following steps:
At first with the electrode pattern photoetching of porose bus electrode or T shape bus electrode on front glass substrate; On the front glass substrate of existing electrode pattern, make secret note with photoetching process again;
At last making coating media layer and evaporation protective layer on the bus electrode figure of secret note;
Described electrode pattern photoetching with porose bus electrode or T shape bus electrode may further comprise the steps on front glass substrate:
When adopting porose bus electrode
Printing photosensitive paste after at first will cleaning through the front glass substrate of annealing in process, drying with the motherboard A exposure that is loaded with the hole bus electrode figure after being decomposed, is developed then, is burnt till;
To after above-mentioned processing, there be the front glass substrate of part bus electrode figure to clean once more, the printing photosensitive paste, drying with the motherboard B exposure that is loaded with the hole bus electrode figure after being decomposed, is developed then, is burnt till, and promptly finishes complete bus electrode and makes;
Or when adopting T shape bus electrode
Printing photosensitive paste after at first will cleaning through the front glass substrate of annealing in process, drying with the motherboard C exposure that is loaded with the T shape bus electrode figure after being decomposed, is developed then, is burnt till;
To after above-mentioned processing, there be the front glass substrate of part bus electrode figure to clean once more, the printing photosensitive paste, drying with the motherboard D exposure that is loaded with the T shape bus electrode figure after being decomposed, is developed then, is burnt till, and promptly finishes complete bus electrode and makes.
2. according to the described manufacture method of claim 1, it is characterized in that, the electrode pattern of described motherboard A is made up of the porose x of the confluxing electrode pattern and the porose y of the confluxing electrode pattern of zigzag of rectangle, the spacing of the porose x of confluxing electrode and the porose y of confluxing electrode is ha, the electrode pattern of described motherboard B consists of the porose y of the confluxing electrode pattern and the porose x of the confluxing electrode pattern of zigzag of rectangle, the spacing of the porose y of confluxing electrode and the porose x of confluxing electrode is hb, and ha equates that with hb value is 80 μ m～160 μ m.
3. according to the described manufacture method of claim 1, it is characterized in that, the electrode pattern of described motherboard C is made up of the x electrode pattern and the T shape y electrode pattern of rectangle, the spacing of the x electrode of rectangle and T shape y electrode is ha, the electrode pattern of described motherboard D consists of the y electrode pattern and the T shape x electrode pattern of rectangle, the spacing of the y electrode of rectangle and T shape x electrode is hb, and ha equates that with hb value is 80 μ m～160 μ m.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100430575A CN100474486C (en) | 2006-06-29 | 2006-06-29 | Manufacturing method for front substrate of plasma display screen |
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| CNB2006100430575A CN100474486C (en) | 2006-06-29 | 2006-06-29 | Manufacturing method for front substrate of plasma display screen |
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| CN1870205A CN1870205A (en) | 2006-11-29 |
| CN100474486C true CN100474486C (en) | 2009-04-01 |
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| KR20120070774A (en) * | 2010-12-22 | 2012-07-02 | 주식회사 오리온 | Pdp panel for multi screen display apparatus and fabrication method thereof |
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Owner name: SICHUAN SHIJI SHUANGHONG DISPLAY DEVICES CO., LTD Free format text: FORMER OWNER: IRICO GROUP ELECTRONICS CO., LTD. Effective date: 20070622 |
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Effective date of registration: 20070622 Address after: 621000, Zhou Yonghong, No. 35 Tung Hing East Road, hi tech Zone, Sichuan, Mianyang Applicant after: Sichuan Sterope Orion Display Co., Ltd. Address before: 712021 No. 1 Rainbow Road, Shaanxi, Xianyang Applicant before: IRICO Group Electronics Co., Ltd. |
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