CN100470859C - Large power light-emitting diode - Google Patents
Large power light-emitting diode Download PDFInfo
- Publication number
- CN100470859C CN100470859C CNB2006100335956A CN200610033595A CN100470859C CN 100470859 C CN100470859 C CN 100470859C CN B2006100335956 A CNB2006100335956 A CN B2006100335956A CN 200610033595 A CN200610033595 A CN 200610033595A CN 100470859 C CN100470859 C CN 100470859C
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- China
- Prior art keywords
- light
- emitting diode
- layer
- backlight unit
- diode chip
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Led Devices (AREA)
Abstract
This invention provides a large power LED including at least a LED chip and a metal base, in which, the top surface of the base is plated with an alumina layer and a metal conduction layer covers the top surface of it, and a high heat-conductive agglutinating laye or an eutectic layer is set between the chip and the alumina layer or the metal layer, which replaces traditional PCB with a non-conductive alumina layer and a metal layer covering it to reduce heat resistance and length of radiation channel.
Description
[technical field]
The present invention relates to a kind of luminescent device, relate in particular to a kind of large-power light-emitting diodes.
[background technology]
The chip of large-power light-emitting diodes can produce a large amount of heat when work, chip temperature is raise rapidly, straight line descends because the luminous efficiency of light-emitting diode and reliability are with the rising of chip temperature, the heat that how to reduce thermal resistance to greatest extent, chip is produced distributes effectively, making light-emitting diode be operated in lower temperature, is the key of making large-power light-emitting diodes at present.
Traditional SMD (surface mounted device) LED package mode, be directly to be fixedly arranged in light-emitting diode on the printed substrate, because the printed substrate heat dissipation is not good, the heat that produces when making the work of light-emitting diode can't in time distribute, and therefore the operating current of traditional SMD light-emitting diode is generally below 20 milliamperes.
For solving because of the not good problem that causes the light-emitting diode operating current to be difficult to promote of printed substrate heat dissipation, as shown in Figure 1, some manufacturer has adopted the technical scheme of offering perforation and fill high-thermal conductive metal conductor 1 on printed circuit board (PCB) 4, light-emitting diode chip for backlight unit 2 is mounted on the described high-thermal conductive metal conductor 1 by elargol 3, and electrode of light emitting diode is electrically connected with printed circuit board (PCB) 4 by gold thread 5.Though the high-thermal conductive metal conductor has strengthened the thermal diffusivity of light-emitting diode, still unfavorable because the thermal resistance of printed circuit board (PCB) is bigger to the heat radiation of light-emitting diode, be difficult to make the power of light-emitting diode and luminous efficiency to be significantly improved.
[summary of the invention]
Technical problem to be solved by this invention is: a kind of large-power light-emitting diodes is provided, replaces traditional printed circuit board (PCB), have characteristics such as thermal resistance is little, radiating efficiency height.
For solving the problems of the technologies described above, the present invention adopts following technical scheme: a kind of large-power light-emitting diodes, comprise at least one light-emitting diode chip for backlight unit and metab, this metab upper surface is provided with an alumina layer, this alumina layer upper surface is covered with metal conducting layer, described light-emitting diode chip for backlight unit and alumina layer or metal interlevel are provided with high thermal conductance adhesive layer or eutectic layer, this high-melting-point eutectic is scolding tin and silver or golden eutectic, this scolding tin is coated on described alumina layer or metal level upper surface, and this gold or silver are located at the face that mounts of light-emitting diode chip for backlight unit.
Further improvement in the technical proposal is: when this light-emitting diode chip for backlight unit adopts the formal dress mode, described light-emitting diode chip for backlight unit is loaded on alumina layer or metal level by described high thermal conductance adhesive layer or eutectic laminating, and described light-emitting diode chip for backlight unit electrode is electrically connected with the institute metal level by gold thread.
Further improvement in the technical proposal is: when this light-emitting diode chip for backlight unit adopted the upside-down mounting mode, described electrode of light emitting diode was affixed by described high thermal conductance adhesive layer and metal level.
Further improvement in the technical proposal is: this high thermal conductance adhesive layer is an elargol.
Further improvement in the technical proposal is: be mixed with gold goal in this scolding tin.
The invention has the beneficial effects as follows: large-power light-emitting diodes of the present invention, replace traditional printed circuit board (PCB) with nonconducting alumina layer and the metal level that overlays on the described alumina layer, reduced thermal resistance, reduced the length of heat dissipation channel, heat energy is distributed faster, thereby make the present invention have characteristics such as thermal resistance is little, radiating efficiency height.
Simultaneously, when mounting, light-emitting diode normally allow the electrode place of chip towards last, and the reverse side of electrode place face is fixed on metal base or the lead frame, it can't realize that the reason of upside-down mounting is because metal base or lead frame are conductors, if upside-down mounting then can cause short circuit, because alumina layer is non-conductive, thereby can realize upside-down mounting on metal level of the present invention, not only can promote the light efficiency of LED, also be good improvement for heat radiation simultaneously.
In addition, under the uniform temperature condition, this is coated on the scolding tin of affiliated alumina layer or metal level upper surface and is located at gold or the silver-colored eutectic that light-emitting diode mounts face, make light-emitting diode chip for backlight unit and alumina layer or metal level affixed, compare with gluing the connecing of conventional silver, can increase the constant intensity of light-emitting diode chip for backlight unit, temperature does not raise in the time of on the one hand can be owing to work, stress increases, thereby cause light-emitting diode chip for backlight unit to come off; On the other hand, be welded on the printed substrate because light-emitting diode chip for backlight unit can directly be fixed on the alumina layer, so its radiating effect is also good than traditional, after tested, the heat conductivility of traditional light-emitting diode is lower by about 70% than the technical program.
[description of drawings]
Fig. 1 is the structural representation of existing large-power light-emitting diodes.
Fig. 2 is the structural representation of large-power light-emitting diodes first embodiment of the present invention.
Fig. 3 is the structural representation of large-power light-emitting diodes second embodiment of the present invention.
Fig. 4 is the structural representation of large-power light-emitting diodes the 3rd embodiment of the present invention.
[embodiment]
The invention will be further described below in conjunction with accompanying drawing.
As shown in Figure 2, large-power light-emitting diodes of the present invention comprises at least one light-emitting diode chip for backlight unit 2 and metab 1,1 surface is provided with an alumina layer 6 on this metab, these alumina layer 6 upper surfaces are covered with metal conducting layer 7, and described light-emitting diode chip for backlight unit 2 is provided with high thermal conductance adhesive layer or eutectic layer 8 with alumina layer 6.Usually this alumina layer plating is provided with on described metab.
Light-emitting diode chip for backlight unit described in the present embodiment 2 adopts the formal dress mode, described light-emitting diode chip for backlight unit 2 is mounted on alumina layer 6 by described high thermal conductance adhesive layer 8 (being generally elargol), and described light-emitting diode chip for backlight unit 2 electrodes are electrically connected with institute metal level 7 by gold thread 5.
Also can be provided with protective circuit or drive circuit (scheming not shown) on this metal level 7, this metal level 7 is the copper layer.
As shown in Figure 3, light-emitting diode chip for backlight unit 2 adopts the formal dress mode, and 7 of described light-emitting diode chip for backlight unit 2 metal levels are provided with high-melting-point eutectic layer 8, and this high-melting-point eutectic layer 8 is scolding tin and silver or golden eutectic.This scolding tin (scheming not shown) is coated on described metal level 7 upper surfaces, and this gold or silver (scheming not shown) are located at the face that mounts of light-emitting diode chip for backlight unit 2.
Wherein, be mixed with gold goal in this scolding tin, the described scolding tin that is mixed with gold goal is adsorbed by gold goal when fusing and can stream hold and cause short circuit, promptly need not dielectric layer and can be from localization at weld, is mixed with the scolding tin of gold goal and the scolding tin that is not mixed with gold goal simultaneously and can increases contact area with chip.
As shown in Figure 4, this light-emitting diode chip for backlight unit 2 adopts the upside-down mounting mode, the electrode of described light-emitting diode chip for backlight unit 2 is affixed with metal level 7 by described high thermal conductance adhesive layer (being generally elargol) or eutectic layer 8, in the present embodiment, this scolding tin (scheming not shown) that is mixed with gold goal 9 is coated on described metal level 7 upper surfaces, and this gold or silver (scheming not shown) are located at the face that mounts of light-emitting diode chip for backlight unit 2 electrodes.
Large-power light-emitting diodes of the present invention, replace traditional printed circuit board (PCB) with nonconducting alumina layer and the metal level that overlays on the described alumina layer, reduced thermal resistance, reduced the length of heat dissipation channel, heat energy is distributed faster, thereby make the present invention have characteristics such as thermal resistance is little, radiating efficiency height.
Simultaneously, when mounting, light-emitting diode normally allow the electrode place of chip towards last, and the reverse side of electrode place face is fixed on metal base or the lead frame, it can't realize that the reason of upside-down mounting is because metal base or lead frame are conductors, if upside-down mounting then can cause short circuit, because alumina layer is non-conductive, thereby can realize upside-down mounting on metal level of the present invention, not only can promote the light efficiency of LED, also be good improvement for heat radiation simultaneously.
In addition, under the uniform temperature condition, this is coated on the scolding tin of affiliated alumina layer or metal level upper surface and is located at gold or the silver-colored eutectic that light-emitting diode mounts face, make light-emitting diode chip for backlight unit and alumina layer or metal level affixed, compare with gluing the connecing of conventional silver, can increase the constant intensity of light-emitting diode chip for backlight unit, temperature does not raise in the time of on the one hand can be owing to work, stress increases, thereby cause light-emitting diode chip for backlight unit to come off; On the other hand, be welded on the printed substrate because light-emitting diode chip for backlight unit can directly be fixed on the alumina layer, so its radiating effect is also good than traditional, after tested, the heat conductivility of traditional light-emitting diode is lower by about 70% than the technical program.
Claims (7)
1, a kind of large-power light-emitting diodes, comprise at least one light-emitting diode chip for backlight unit and metab, this metab upper surface is provided with an alumina layer, this alumina layer upper surface is covered with metal conducting layer, described light-emitting diode chip for backlight unit and alumina layer or metal interlevel are provided with high thermal conductance adhesive layer or eutectic layer, this high-melting-point eutectic is scolding tin and silver or golden eutectic, it is characterized in that: this scolding tin is coated on described alumina layer or metal level upper surface, and this gold or silver are located at the face that mounts of light-emitting diode chip for backlight unit.
2, large-power light-emitting diodes as claimed in claim 1, it is characterized in that: when this light-emitting diode chip for backlight unit adopts the formal dress mode, described light-emitting diode chip for backlight unit is loaded on alumina layer or metal level by described high thermal conductance adhesive layer or eutectic laminating, and described light-emitting diode chip for backlight unit electrode is electrically connected with the institute metal level by gold thread.
3, large-power light-emitting diodes as claimed in claim 1 is characterized in that: when this light-emitting diode chip for backlight unit adopted upside-down mounting mode, described electrode of light emitting diode was affixed by described high thermal conductance adhesive layer or eutectic layer and metal level.
4, large-power light-emitting diodes as claimed in claim 1 is characterized in that: this high thermal conductance adhesive layer is an elargol.
5, large-power light-emitting diodes as claimed in claim 1 is characterized in that: be mixed with gold goal in this scolding tin.
6, large-power light-emitting diodes as claimed in claim 1 is characterized in that: this metal level is provided with protective circuit or drive circuit.
7, large-power light-emitting diodes as claimed in claim 1 is characterized in that: this metal level is the copper layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100335956A CN100470859C (en) | 2006-02-15 | 2006-02-15 | Large power light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100335956A CN100470859C (en) | 2006-02-15 | 2006-02-15 | Large power light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101022144A CN101022144A (en) | 2007-08-22 |
| CN100470859C true CN100470859C (en) | 2009-03-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100335956A Expired - Fee Related CN100470859C (en) | 2006-02-15 | 2006-02-15 | Large power light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100470859C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102339944A (en) * | 2010-07-29 | 2012-02-01 | 富士迈半导体精密工业（上海）有限公司 | Encapsulating structure of light-emitting diode |
| CN102738371A (en) * | 2011-04-12 | 2012-10-17 | 东莞怡和佳电子有限公司 | White light led and manufacturing method thereof |
| CN102738375A (en) * | 2011-04-12 | 2012-10-17 | 东莞怡和佳电子有限公司 | Led light source module |
| CN103378220A (en) * | 2012-04-23 | 2013-10-30 | 比亚迪股份有限公司 | High-voltage light-emitting diode chip and method for manufacturing same |
| CN104183683A (en) * | 2013-05-24 | 2014-12-03 | 上海航天测控通信研究所 | Multi-chip LED packaging method based on aluminum matrix composite substrate |
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2006
- 2006-02-15 CN CNB2006100335956A patent/CN100470859C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101022144A (en) | 2007-08-22 |
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Granted publication date: 20090318 Termination date: 20160215 |