1354383 九、發明說明： 【發明所屬之技術領域】 本案係為一種光二極體封裝結構，尤指一種僅具有一 種散熱路徑的光二極體封裝結構。 【先前技術】 凊翏閱第一圖(a)、（b)，該第—圖⑷係為習用發光二 =體封装結構1G之剖面示意圖，該第—圖⑼係為該習用 •fx光一極體封裝結構1〇之俯視示意圖。豆中該發光二極 體晶粒構裝於-基座搬上，該基座搬係與一導熱 ==利用一焊料12進行兩者之接合，該導熱柱ι〇3並 習用^層1〇5 (通常為紹材質或銅材質）連接。其中該 以及極體封裝結構1G更包含有數個導電接點106 乂及連接至-導電層綱的一導電架1〇7， 提供該發光二極體晶粒101發光時所需之略。、、、7 Ζ導電層_該導熱層105均為金屬以，°^^ θ提供有-絕緣層⑽’以避免兩者之間接: 生短路的情形，最後以-_11G及—透/接，觸而產 用封裝二極體封裝結構10的封裝。1 111完成該習 由於該發光一極體晶粒101發光時，會 ^ 能，因此該發光二極體封裝結構10便且 大里的熱 /、有必要的散熱路 6 徑，以免該發光二極體晶粒1〇1因溫度過高而導致週遭元 件的損壞而降低使用壽命。在上述習用發光二極體封裝結 構10中，便具有以下兩種散熱路徑。第一散熱路徑是利 用§亥導熱柱103在該發光二極體晶粒1〇1發光時將熱能傳 導至導熱層105散出。第二散熱路徑則是在該等導電接點 106與導電架1〇7供應電流時，同時將熱能透過該等導電 接”占與$電架107從該導電層1〇4散出（因為該等導 電接106點、導電架1〇7與該導電層1〇4皆為金屬材質， 故仍可傳導少許熱能，並將之散出）。 、 但是在上述該第一散熱路徑中，由於該基座1(^2與該 T熱柱103之間係透過焊料12進行接合，而在焊接作業 時，則可能會因為作業的疏失，導致空氣滲入而在焊料 12中產生若干的氣泡，使導熱不完全，造成該習用發光 二極體封裝結構10使用壽命減少的現象。此時就必須仰 賴另外的該苐一散熱路徑，但在該第二散熱路徑中，因該 導電架之斷面面積小，熱阻相對的較大，傳熱的能力有 限，而且如果因為打線作業的疏失而造成該等導電接點 106與導電架1〇7之間接觸不良的現象，也會影響該發光 一極體晶粒1〇1進行散熱的效率’而導致該發光二極體晶 粒封裝結構1〇使用壽命減少的問題。 因為該發光二極體晶粒封裝結構1〇必須是其在焊接 作業或是打線作業沒有任何疏失的情況下，才能確保能夠 順利且有效率地將熱能散出，所以建立在上述該發光二極 體封裝結構1〇下之發光二極體產品，若散熱不完全，我 們便無法切確地在第—時 成後進行品管檢_，ϋ物’在該產品製造完 (如亮⑽，我們便能夠知道 有疏失，其第二散熱路獲二疋在打線作業上 品。但是，如果是在焊接作；^ 散豸’屬瑕疯 熱路徑無讨效地進行散失料致其第一散 發現，因域算該產品在:：=讀測時立即 時，也不能销在焊接 失而罐_光 卜接^有發生作業上的疏失。 封裝ί ^述發光二極體晶粒 口二成後接:'σ述兩種散熱途徑’在—發光二極體產 心成後知品线啊，縣法在第—時 品的瑕疵，是故，如付鲈釣π斗山没士 兄0袭座 #-糾_ 僅有—種散熱路徑的發 先一極心構’而能夠在第一時間掌握其產品可靠性，進 而改善該習上述_光二極體晶粒封裝結構10之缺失， 便是本案最主要之目的。 、 【發明内容】 本案係為一種光二極體封裝結構，主要包含有：一光 二極體晶粒’用以發出—光線；—散熱基板，用以將該光 二極體晶粒所產生之熱能散出；一第一導電層，係形成於 忒散熱基板上，一第—絕緣層，覆蓋於該第一導電屑之^ ;一封裝基座，設置於該第一絕緣層之上方，該封^基座 係以一承載空間來承载該光二極體晶粒；以及一導電釺二 及 導電層 貫t該第—絕緣層與該封裝基座，而以-第一端以 f ―立而來分別電性連接至該光二極體晶粒與該第- 根據上述構想，本 該光二椏體晶粒係可為 案所述之光二極體封裝結構，其中 一發光二極體晶粒。 根據上述構想，本案所述之光二極體封裝結構，更包 :::導雜著材料，其係塗布於該封裝基座之底面與該 =導電層之頂面上，使得該封裝基座能夠固定於該第一 導电層上’該導電接著材料可以是銀膠或鲜錫。 j根據上述構想，本案所述之光二極體封裝結構，其中 該散熱基板包含：—導熱層，其係以-姉質所完成’用 以將該光二極體所產生之熱能散出；以及—第二絕緣層， 八係以水5物材質所完成並形成於該導熱層上，用以絕 緣該第一導電層與該導熱層。 根據上述構想，本案所述之光二極體封裝結構，其中 該散熱基板係為一矩形構造。 根據上述構想，本案所述之光二極體封裝結構，其中 該封裝基座係以一矽材質所完成之封裝基座。 根據上述構想，本案所述之光二極體封裝結構，其中 該第一導電層係可以一 TiW/Cu/Ni/Au、一 Ti/eu/Ni/Au、 —Ti/AWNi/Αιι、一 AlCu/Ni/Au 或一AuSn 合金所完成。 根據上述構想，本案所述之光二極體封裝結構，其中 該第一導電層係包含有一正極部以及一負極部，且該正極 部與該負極部係部分露出該第一絕緣層。 根據上述構想，本案所迷之光二極體封裝結構，盆中 =第—絕緣層覆蓋於第-導電層上並形成於該正極ς盘 5亥負極部之間，用以絕緣該正極部與該負極部。 、 …曾根據上述構想，本案所迷之光二極體封裝結構，其中 =電結構細—貫穿孔結構所完成，該貫穿孔結構之侧 壁係形成有-第二導電層’而鱗電結構之該第—端係位 於該承載空間之底部’該第二端係位於該第一導電層之表 面上。 …根據上述構想，本案所述之光二極體封裝結構，其中 該光-極體晶粒係以―打線或—覆晶之方式與該導電結 構完成電性連接。 ° 【實施方式】 d睛參閱第二圖⑷、（b)，其中第二圖⑷係為本案為改 善習用缺失所發展出之一光二極體封裝結構20之較佳實 施例剖面示意圖，而第二圖(b)係為本案為改善習用缺失 所發展出之一光二極體封裝結構2 0之第一實施例俯視示 意圖。如第二圖(a)所示，該光二極體封裝結構20主要包 含有一光二極體晶粒201、一散熱基板202、一第一導電 層203、一第一絕緣層2〇4、一封裝基座2〇5以及—導電 結構206’其中該封裝基座2〇5係以一矽材質所完成之封 裝基座，其係設置於該第一絕緣層204上，並具有一承裁 空間2051 ’用以承载該光二極體晶粒2〇1，而該光二極體 1354383 . 晶粒201係為一發光二極體晶粒（Light Emitting Diode， 簡稱LED)，該第一絕緣層204係覆蓋於該第一導電層 203上’並形成於該弟一導電層203所具有之一正極部 2031與一負極部2032之間，用以絕緣該正極部2〇31與 該負極部2032，另外’該第一導電層203係可以一 TiW/Cu/Ni/Au 合金、一 Ti/Cu/Ni/Au 合金、一 Ti/Au/Ni/Au、一 AlCu/Ni/Au 或一 AuSn 合金所完成，並 形成於該散熱基板202上，且該正極部2031與該負極部 2032分別部分露出該弟一絕緣層204。該導電结構206 具有一第一端2061以及一第二端2062，係貫穿該第一絕 緣層204，§亥弟一端2061係位於該承載空間之底 — 部，該第二端2062則位於該第一導電層2〇3之表面上， ' 使得該光二極體晶粒201可以一覆晶或以一打線（例如利 用圖式中的導線207)的方式與該第一端2〇6ι連接，進 而使该光二極體晶粒201與該第一導電層203完成電性連 • 接。除此之外’我們也可以在該封裝基座205之底面與該 第一導電層206之頂面塗布導熱性良好之一導電接著材 料A，使得該封裝基座205能夠更穩定的固定在該第一導 電層203上’而通常該導電接著材料A塗布在該封裝基 座205底面的面積以及在該第一導電層2〇3頂面的面積要 大於導電結構206之斷面面積，如此可以增加該封裝基座 205與該第一導電層2〇3間的接觸面積以降低接觸熱ς。 • 以下再就本案之技術特徵做進一步的說明。 承上所述’其中該散熱基板2〇2係包含有—導熱層 11 丄354383 =1 Γ及一第二絕緣層2022 ’該導熱層2。21係可以-導 兮#-权胁曰上 銅）所完成，並用以將 產生的熱能加以導出，而該第二絕緣 i成良好導熱能力的聚合物材f (ρ。—)所 凡亚用以絶緣同樣為金屬材質的該第一導電声篇 以及該導教層2021，另 士工 曰 ，、盾202!另一方面，其中該導電結構施係 電芦toi孔t構’料通孔結構之側壁則形成有一第二導 203曰H 該光二極體晶粒2G1與該第一導電声 ^元連接。而上述部分露岭第―絕緣層綱: 可形成可利用-打線方式(如圖中Ϊ 性連接tf!板(在本圖中未示出)完成電 出，本案所述之該光圖中我們可以清楚看 電路經係為同樣的之散熱路徑與導 體封裝結構的導電盘導敎It 技術中之該發光二極 可利用該導電社構疋兩種不同的散熱路徑，本案係 問題進而達到改善習用發光二極體靴结構散熱不二 術特清楚的知道，本案最主要的* 導電結構206的^:之献—極體封裝結構20中讀 光後，同時將^傳導/^t^體晶粒2G1在通電發 忐道 導至°亥散熱基板202加以導散屮 成導電同時導熱的功效，如此 二f出’宅 用發光二極體鮮έ士娃 采便月—技術中f 體封衣、，構2〇1中的兩種不同的散熱 1354383 ’進而改善該習用發光二極體封裝結構 政…不之的十月形，另一方面，當對應用於本案之光 體發光結構2G的產品進行品f檢測時，如 — 極體晶粒2〇1在發出光線時有亮度不足的現㈣it ㈣先-極體封裝結構2〇的該導電結構2〇6 中發生瑕广此，導致導電的不完全，相較於先前技術中的該 習用光二極體封裝結構201，更能夠在第一時間内發現產 品的瑕疫，進而改善該習用光二極體封裳結構1〇因為具 有兩種散熱路徑而無法精確掌握產品可靠性的問題。 請參閲第三圖，其料將多個本案所述之該光二極體 封裝結構20進行組合應用示意圖。在先前技術中，由於 该習用發光二極體封裝結構具有兩種散熱路徑，且如先前 技術所述’該第二散熱路徑之散熱效率並不理想，因此灸 須將該習用發光二極體封裝結構的散熱裝置設計成極易 散熱的輻射狀，但因為現今光二極體廣泛應用於車燈、紅 綠燈或各式指示燈上，如此之設計便會造成多個光二極體 組合應用時，產生無法相互密合的現象，進而造成了空間 的浪費，由於如上所述，本案之光二極體封裝結構2〇將 该習用發光二極體封裝結構1〇之兩種散熱路徑整合為 一 ’便不會發生該第二散熱路徑散熱不理想的現象，如此 一來，輻射狀之設計便成為'•非必要，是故，在第二圖中的 該光二極體封裝結構20之該散熱基板202便可設計為矩 形之構造’因為矩形具有相互連接時不會產生死角的特 性，因此本案所述之該光二極體封裝結構20便能利用此 13 一特性，而可以在不產生面積浪費的情況下達成多個光二 ，體封裝結構20完成組合而不產生空間浪費的功效，而 夕個光二極體封裝結構20在組合完成後，如第三圖所示。 請參閱第四圖(a)、（b)，其中第四圖⑷係為本案為改 善習用缺失所發展出之光二極體封裝結構3〇另一實施例 之剖面示意圖，而第四圖(b)係為本案為改善習用缺失所 發展出之光二極體封裝結構3〇另一實施例之俯視示意 圖。如第四圖(a)(b)所示，我們可以清楚的看出在本實施 例中，遠光二極體結構3〇係為將複數個如同上述的承载 有先一極體晶粒301的封裝基座3〇5裝設在同一散熱基板 ^)2上，如此一來，在將多個光二極體封裝結構加以 、、、5應用日守，就不需要在個別完成後再加以組合，而能夠 在4光一極體封裝結構進行封裝時—次製作完成，因此， X本貫施例的裝設方式也可以降低在製程上的繁複程 度。而在本實施例中，其餘部分技術手段皆與上述實施例 相同，故在此不予贅述之。 综合上述說明我們可以清楚的知道，本案最主要的技 =特徵即在於該導電結構能夠在該光二極體晶粒通 p發光時’將其所產生之熱能傳導至該散熱基板观加以 散出，以完成導電同時達成導熱的最主要目的，如此一 來，便能將先前技術中該習用發光二極體封裝結構1〇中 的兩種散熱路徑整合成一種散熱路徑，進而改善該習用發 先一極體封裝結構10散熱不穩定的情形，除此之外，由 ;本水之該政熱基板202係為一矩形之構造設計，便能夠 13543831354383 Nine, the invention description: [Technical field of the invention] The present invention is a photodiode package structure, especially an optical diode package structure having only one heat dissipation path. [Prior Art] Referring to the first figures (a) and (b), the first figure (4) is a schematic cross-sectional view of a conventional light-emitting two-body package structure 1G, and the first figure (9) is the conventional one. A schematic view of the body package structure 1 。. In the bean, the light-emitting diode is mounted on the susceptor, and the susceptor is bonded to a heat-conducting== by a solder 12, and the heat-conducting column ι〇3 is used. 5 (usually made of material or copper). The pole package structure 1G further includes a plurality of conductive contacts 106 乂 and a conductive frame 1 〇 7 connected to the conductive layer, which is required for the light-emitting diode die 101 to emit light. , , , 7 Ζ conductive layer _ the thermal conductive layer 105 is a metal, ° ^ ^ θ provided with an insulating layer (10) 'to avoid the connection between the two: the case of a short circuit, and finally -_11G and - through /, The package of the packaged diode package 10 is produced. 1 111. When the light-emitting diode 101 is illuminated, the light-emitting diode package 10 has a large heat and a necessary heat dissipation path 6 to avoid the light-emitting diode. The bulk crystal grain 1〇1 causes damage to surrounding components due to excessive temperature and reduces service life. In the conventional light-emitting diode package structure 10 described above, the following two heat dissipation paths are provided. The first heat dissipation path is conducted by using the heat conduction column 103 to conduct heat energy to the heat conduction layer 105 when the light emitting diode die 1 发光 emits light. The second heat dissipation path is when the conductive contacts 106 and the conductive frame 1〇7 supply current, and the thermal energy is transmitted through the conductive contacts to occupy the electrical frame 107 from the conductive layer 1〇4 (because the The conductive connection 106 points, the conductive frame 1〇7 and the conductive layer 1〇4 are all made of metal, so that a little heat energy can still be transmitted and dissipated. However, in the first heat dissipation path described above, The susceptor 1 (^2 and the T-hot column 103 are joined by the solder 12, and during the soldering operation, air may be infiltrated due to the loss of work, and some bubbles are generated in the solder 12 to conduct heat conduction. Incomplete, resulting in a reduced service life of the conventional LED package structure 10. At this time, it is necessary to rely on the other heat dissipation path, but in the second heat dissipation path, the cross-sectional area of the conductive frame is small. The thermal resistance is relatively large, the heat transfer capability is limited, and if the contact between the conductive contacts 106 and the conductive frame 1〇7 is poor due to the negligence of the wire bonding operation, the light-emitting body may also be affected. Efficiency of heat dissipation of the die 1〇1 As a result, the lifetime of the LED package structure is reduced. Because the LED package structure must be in the absence of any negligence in soldering or wire bonding operations, it can be ensured. Since the heat energy can be dissipated smoothly and efficiently, the light-emitting diode product built under the above-mentioned light-emitting diode package structure can not be accurately performed after the first time. Quality control _, ϋ ' ' After the product is manufactured (such as bright (10), we can know that there is a loss, the second heat dissipation road is the second line in the line work. However, if it is in the welding; ^ 豸 豸' It is a mad thermal path that does not effectively dissipate the material and causes its first scattered discovery. Because the product is calculated at the time::= immediately when reading, it can not be sold in the welding tank. The loss of the package. ί ^ The light-emitting diode die mouth is two after the connection: ' σ describes two kinds of heat dissipation path' in the light-emitting diode production after the product line, the county law in the first - time product The hustle and bustle is the reason, such as Fu Yu fishing π Doosan 0 座座#-correction _ only the first generation of the heat dissipation path's first core structure' can grasp the reliability of the product in the first time, and thus improve the lack of the above-mentioned _photodiode die package structure 10, This is the main purpose of this case. [Inventive content] This case is a photodiode package structure, which mainly includes: a photodiode die 'for emitting light--a heat-dissipating substrate for the photodiode The heat generated by the body grains is dissipated; a first conductive layer is formed on the heat dissipation substrate, and a first insulating layer covers the first conductive chip; a package base is disposed on the first Above the insulating layer, the sealing base carries a photodiode die with a bearing space; and a conductive conductive layer and a conductive layer intersect the first insulating layer and the package base, and the first The terminal is electrically connected to the photodiode die and the first electrode according to f - respectively. According to the above concept, the photodiode die structure can be the photodiode package structure described in the case, wherein one of the light emitting diodes Polar body grain. According to the above concept, the photodiode package structure described in the present invention further comprises: a conductive material coated on the bottom surface of the package base and the top surface of the = conductive layer, so that the package base can Fixed on the first conductive layer 'The conductive adhesive material may be silver glue or fresh tin. According to the above concept, the photodiode package structure of the present invention, wherein the heat dissipating substrate comprises: a heat conducting layer, which is completed by using - enamel to dissipate heat energy generated by the photodiode; and The second insulating layer is formed by the water material and formed on the heat conducting layer for insulating the first conductive layer and the heat conductive layer. According to the above concept, the photodiode package structure of the present invention, wherein the heat dissipation substrate is a rectangular structure. According to the above concept, the photodiode package structure described in the present invention, wherein the package base is a package base completed by a material. According to the above concept, the photodiode package structure of the present invention, wherein the first conductive layer can be a TiW/Cu/Ni/Au, a Ti/eu/Ni/Au, a Ti/AWNi/Αι, an AlCu/ Finished with Ni/Au or an AuSn alloy. According to the above concept, the photodiode package structure of the present invention, wherein the first conductive layer comprises a positive electrode portion and a negative electrode portion, and the positive electrode portion and the negative electrode portion portion expose the first insulating layer. According to the above concept, in the photodiode package structure of the present invention, the basin-first insulating layer covers the first conductive layer and is formed between the negative electrode portion of the positive electrode pad 5 for insulating the positive electrode portion and the Negative part. According to the above concept, the light diode package structure disclosed in the present invention, wherein the electric structure is fine-through-hole structure, the sidewall of the through-hole structure is formed with a second conductive layer and the scale structure The first end is located at the bottom of the carrying space. The second end is located on the surface of the first conductive layer. According to the above concept, the photodiode package structure of the present invention, wherein the photo-polar body die is electrically connected to the conductive structure in a "wire-bonding" or flip-chip manner. [Embodiment] d-eye refers to the second figure (4), (b), wherein the second figure (4) is a cross-sectional view of a preferred embodiment of the photodiode package structure 20 developed to improve the conventional use of the present invention, and Figure 2 (b) is a top plan view of the first embodiment of the photodiode package structure 20 developed to improve the conventional use. As shown in the second figure (a), the photodiode package structure 20 mainly includes a photodiode die 201, a heat dissipation substrate 202, a first conductive layer 203, a first insulating layer 2〇4, and a package. The base 2〇5 and the conductive structure 206', wherein the package base 2〇5 is a package base made of a material, which is disposed on the first insulation layer 204 and has a receiving space 2051. 'For carrying the photodiode die 2〇1, and the photodiode 1354438. The die 201 is a Light Emitting Diode (LED), and the first insulating layer 204 is covered. The first conductive layer 203 is formed between the positive electrode portion 2031 and the negative electrode portion 2032 of the first conductive layer 203 for insulating the positive electrode portion 21 and the negative electrode portion 2032. The first conductive layer 203 can be completed by a TiW/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, a Ti/Au/Ni/Au, an AlCu/Ni/Au or an AuSn alloy. And formed on the heat dissipation substrate 202, and the positive electrode portion 2031 and the negative electrode portion 2032 partially expose the first insulating layer 204. The conductive structure 206 has a first end 2061 and a second end 2062 extending through the first insulating layer 204. The first end 2061 is located at the bottom of the carrying space, and the second end 2062 is located at the bottom. On the surface of a conductive layer 2〇3, 'the photodiode die 201 can be flipped or connected to the first end 2〇6 by a wire (for example, by using the wire 207 in the drawing). The photodiode die 201 is electrically connected to the first conductive layer 203. In addition, we can also apply a conductive conductive material A on the bottom surface of the package base 205 and the top surface of the first conductive layer 206 to make the package base 205 more stable. The area of the first conductive layer 203 on the first conductive layer 203 is generally larger than the area of the top surface of the first conductive layer 2 〇 3 and the cross-sectional area of the conductive structure 206. The contact area between the package base 205 and the first conductive layer 2〇3 is increased to reduce the contact enthalpy. • The technical features of this case are further explained below. According to the above description, the heat dissipating substrate 2〇2 includes a heat conducting layer 11 丄 354383 =1 Γ and a second insulating layer 2022 ′. The heat conducting layer 2. The 21 system can be guided by #兮权曰曰上铜Finished, and used to derive the generated thermal energy, and the second insulating material i is a good thermal conductivity polymer material f (ρ.-). The first conductive sound is also insulated from the same metal material. And the teaching layer 2021, the sergeant, the shield 202! On the other hand, the conductive structure is applied to the side wall of the electric through hole to form a second guide 203 曰 H The polar body 2G1 is connected to the first conductive acoustic element. The above part of the Luling first-insulation layer: can be formed into a usable-wire type (as shown in the figure, the tf! plate (not shown in this figure) is completed, and in the light diagram described in this case, we It can be clearly seen that the circuit is the same heat conduction path and the conductive disk of the conductor package structure. The light-emitting diode can utilize the conductive structure to construct two different heat dissipation paths, and the problem in this case is improved. The structure of the light-emitting diode shoe is not clear. The most important * of the conductive structure 206 of the case is the one of the conductive structure 206. After reading the light in the polar package structure 20, the conductive film is transferred at the same time. 2G1 is electrically connected to the heat-dissipating substrate 202 to conduct the conduction and conduction into the conductive and heat-conducting effect, so that the two-family light-emitting diodes are used for the decoration of the moon. , the two different heat dissipations in the 2〇1 1543438', thereby improving the October shape of the conventional light-emitting diode package structure, on the other hand, when corresponding to the light-emitting structure 2G used in the present case When the product f is detected, for example, the polar body grain 2〇1 is When the light is out, there is insufficient brightness (4) it (4) The first-pole package structure 2〇 The conductive structure 2〇6 occurs widely, resulting in incomplete conduction, compared to the conventional photodiode package in the prior art. Structure 201 is more capable of discovering the plague of the product in the first time, thereby improving the conventional light diode sealing structure. The problem is that the reliability of the product cannot be accurately grasped because of the two heat dissipation paths. In the prior art, the conventional light-emitting diode package structure has two heat dissipation paths, and as described in the prior art, The heat dissipation efficiency of the second heat dissipation path is not ideal. Therefore, the moxibustion device of the conventional light-emitting diode package structure is designed to be extremely heat-dissipating, but since the light diodes are widely used in the lights, traffic lights or On the indicator light, such a design will cause a combination of multiple photodiodes, which will not be able to closely adhere to each other, resulting in waste of space due to As described above, the optical diode package structure of the present invention integrates the two heat dissipation paths of the conventional light-emitting diode package structure into one, so that the heat dissipation of the second heat dissipation path does not occur, so that Therefore, the radial design becomes '• unnecessary, so the heat-dissipating substrate 202 of the photodiode package structure 20 in the second figure can be designed as a rectangular structure' because the rectangles are not connected to each other. The characteristics of the dead angle are generated, so that the photodiode package structure 20 described in the present invention can utilize the 13-characteristics, and a plurality of light can be achieved without generating area waste. The package structure 20 is combined without generating space. The waste of efficacy, and the evening light diode package structure 20 after the combination is completed, as shown in the third figure. Please refer to the fourth figure (a), (b), where the fourth picture (4) is the case for the improvement of the abuse The developed photodiode package structure 3 is a schematic cross-sectional view of another embodiment, and the fourth diagram (b) is a photodiode package structure developed in the present invention to improve the conventional use. A schematic view of FIG. As shown in the fourth figure (a) (b), it can be clearly seen that in the present embodiment, the high-beam diode structure 3 is a plurality of dies 301 carrying the first-pole crystal grains 301 as described above. The package base 3〇5 is mounted on the same heat dissipation substrate ^2, so that when a plurality of photodiode package structures are applied, and 5 is applied, it is not necessary to combine them after individual completion. The package can be completed in the case of the 4-light one-pole package structure. Therefore, the installation method of the X embodiment can also reduce the complexity of the process. In the present embodiment, the rest of the technical means are the same as those of the above embodiment, and therefore will not be described herein. Based on the above description, we can clearly know that the most important feature of the present invention is that the conductive structure can transmit the thermal energy generated by the photodiode to the heat dissipating substrate when the photodiode is lit by p. In order to achieve the main purpose of achieving conduction and achieving thermal conduction, the two heat dissipation paths in the prior art LED package structure can be integrated into a heat dissipation path, thereby improving the conventional application. In the case where the heat dissipation of the polar package structure 10 is unstable, in addition, the political substrate 202 of the water is a rectangular structure design, which can be 135483
生面積浪費的條件下將多個光二極 s，進而應用在各種發光二極體產品上，另構紐Under the condition of wasted area, multiple photodiodes will be applied to various light-emitting diode products.
基板上㈣裝設複數個承载有光 之封裝基座，崎低製作步_繁複程度，本 :::利地改善先前技術中所產生之問題，但以上所:僅 為本發明案之難#關而已，並科侷限杨之申請 利範圍，本發明得由熟f此技藝之人士任㈣思而為^般 修飾，然皆不脫如附申請專利範圍所欲保護者。 又 圖式簡單說明】 本案得藉由下列圖式及說明，俾得一更深入之了解·· 第一圖（a)，其係為習用發光二極體封裝結構之剖面示意 圖。 第一圖(b)，其係為習用發光二極體封裝結構之俯視示意 圖。 第二圖(a) ’其係為本案之光二極體封裝結構之較佳實施 例剖面示意圖。 第二圖(b)’其係為本案之光二極體封裝結構之較佳實施 例俯視示意圖。 第三圖，其係為將多個本案所述之該光二極體封裝結構進 行組合應用示意圖。 第四圖（a) ’其係為本案為改善習用缺失所發展出之光二 15 之光二 ，體封裝結構另—實施例之剖面示意圖， 第四圖(b) ’其係為本案為改善習用缺失所 極體封裝結構另—實施例之俯視示意圖。x 【主要元件符號說明】 本案圖式中所包含之各元件列示如下： 習用發光二極體封裝結構10 封裝基座102 導電層104 導電接點106 絕緣層108 封膠110 光二極體封裝結構2〇 發光二極體晶粒101 導熱柱103 導熱層105 導電架107 導線109 透鏡111 光二極體晶粒201 導熱層2021 散熱基板202 第二絕緣層2022 第一導電層203 負極部2032 正極部2031 第一絕緣層204 封裝基座205 導電結構206 第一端2061 第二端2062 第二導電層2063 導線208 光二極體封裝結構3〇 導線207 16 1354383On the substrate (4), a plurality of packaged bases carrying light are installed, and the production steps are simplistic, and the problem is: the::: advantageously improves the problems generated in the prior art, but the above is only the difficulty of the present invention# Regardless of the scope of the application, and the scope of the application is limited to Yang's application, the invention may be modified by the person skilled in the art, and it is not intended to be protected by the scope of the patent application. A brief description of the figure] This case can be obtained through a more detailed understanding of the following drawings and descriptions. The first figure (a) is a schematic cross-sectional view of a conventional light-emitting diode package structure. The first figure (b) is a top plan view of a conventional light emitting diode package structure. Fig. 2(a) is a schematic cross-sectional view showing a preferred embodiment of the photodiode package structure of the present invention. The second figure (b)' is a top plan view of a preferred embodiment of the photodiode package structure of the present invention. The third figure is a schematic diagram of a plurality of combinations of the photodiode package structures described in the present application. Figure 4 (a) 'This is a cross-sectional view of the light developed in the case of improving the use of the lack of light, the body package structure is another example, the fourth figure (b) 'this is the case for the improvement of the lack of practice A schematic top view of another embodiment of the polar package structure. x [Main component symbol description] The components included in the diagram of the present invention are listed as follows: Conventional light-emitting diode package structure 10 Package base 102 Conductive layer 104 Conductive contact 106 Insulation layer 108 Sealant 110 Photodiode package structure 2 〇 LED dies 101 Thermally conductive column 103 Thermally conductive layer 105 Conductive frame 107 Conductor 109 Lens 111 Photodiode die 201 Thermally conductive layer 2021 Heat sink substrate 202 Second insulating layer 2022 First conductive layer 203 Negative portion 2032 Positive portion 2031 First insulating layer 204 package base 205 conductive structure 206 first end 2061 second end 2062 second conductive layer 2063 wire 208 light diode package structure 3 wire 207 16 1354383
光二極體晶粒301 導熱層3021 第一導電層303 負極部3032 封裝基座305 第一端3061 第二導電層3063 導線308 散熱基板302 第二絕緣層3022 正極部3031 第一絕緣層304 導電結構306 第二端3062 導線307 導電接著材料APhotodiode die 301 Thermally conductive layer 3021 First conductive layer 303 Negative portion 3032 Package base 305 First end 3061 Second conductive layer 3063 Conductor 308 Heat sink substrate 302 Second insulating layer 3022 Positive portion 3031 First insulating layer 304 Conductive structure 306 second end 3062 wire 307 conductive material A
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