CN100470267C - Excess optical carrier grating - Google Patents
Excess optical carrier grating Download PDFInfo
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- CN100470267C CN100470267C CNB2007100495413A CN200710049541A CN100470267C CN 100470267 C CN100470267 C CN 100470267C CN B2007100495413 A CNB2007100495413 A CN B2007100495413A CN 200710049541 A CN200710049541 A CN 200710049541A CN 100470267 C CN100470267 C CN 100470267C
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- grating
- exciting light
- light sources
- galvanometer
- optical carrier
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Abstract
The invention discloses an excess light carrier grating which comprises a silicon wafer, a scanning driver, a vibratory mirror and an excited light source. The excited light source is refracted to the silicon wafer through a reflex of the vibratory mirror. The scanning driver is connected with the vibratory mirror to drive the vibratory mirror to rotate periodically and a radio frequency signal is added on a bias voltage to regulate the excited light source. The invention has the advantages that: 1) a constant is adjustable and flexible; therefore the invention can be applied to such systems as a correlator and a spectrum analyzer. 2) the constant can be very small, that means that the grating splitter ability is very strong and a frequency resolution is very good.
Description
Technical field
The present invention relates to the optical information technical field, be specifically related to a kind of excess optical carrier grating.
Background technology
Grating is mainly used in the optical information processing field.Grating is divided into two classes according to its working method, and a class is a transmission grating, and another kind of is reflection grating.If classify by its modulating action, can be divided into amplitude grating and phase grating again to incident light.General transmission grating is to depict wide, the equally spaced indentation of a lot of on sheet glass now, and the indentation place is light tight, and no indentation place is the slit of distance light.The shortcoming of transmission grating is: because the effect of the single slit diffraction factor, dispersionless zero level main pole conversion has a big chunk of total luminous energy in the diffraction pattern, and remaining luminous energy also will be distributed in the spectrum at different levels, so that the light intensity of every grade of spectrum is all smaller, and level is inferior high more, and light intensity is weak more.Reflective gratings is to depict a lot of indentation on the metallic reflection minute surface, and diffuse reflection takes place at the indentation place, and indentation is not in diffraction takes place on the reflection direction.Reflective gratings is divided into two kinds again: plane reflection grating and concave reflection grating.The plane reflection grating can stagger interfering 0 grade between 0 grade of single slit diffraction and seam, thereby luminous energy is transferred on certain required one-level spectral line (allow zero level become and lack level), its shortcoming is: low optical efficiency and chromatic dispersion are to the serious unevenness of wavelength, second order spectrum must be eliminated, and needs two horizontal rasters to be operated in different-waveband respectively usually and obtains suitable horizontal chromatic dispersion.Concave reflection grating can play chromatic dispersion element and two effects of collimating mirror, makes the light beam after the chromatic dispersion focus on exit slit, obtains sharp line spectra, and its shortcoming is: difficulty is taken into account flat field and high-resolution requirement, causes aberration bigger than normal, is not generally adopted.Above-mentioned grating is only modulated the amplitude of incident light, has changed the distribution of the amplitude transmission coefficient or the reflection coefficient of incident light, so be amplitude grating.The indentation of a grating is very close usually, and the grating indentation density that adopts in the optical spectra district is 0.2-2400/mm, and that use always in laboratory study work at present is 600/mm and 1200/mm.After above-mentioned preparing grating was good, parameters such as pitch were just decided.Acousto-optic Bragg device is the adjustable diffraction grating of parameter, thereby it is to utilize ultrasound wave to cause that corresponding variation also takes place along with the elastic strain at this place the refractive index of the interior each point of density alternate medium of medium.
Summary of the invention
Technical matters to be solved by this invention is how a kind of excess optical carrier grating is provided, thereby this grating changes the semiconductor material refractive index by excess optical carrier to be realized the incident diffraction of light, it is compared with acousto-optic Bragg device, and pitch can be accomplished littler, and changeable parameters.
Technical matters proposed by the invention is to solve like this: a kind of excess optical carrier grating is provided, it is characterized in that: comprise silicon chip, scanner driver, galvanometer and exciting light sources, described exciting light sources incides on the described silicon chip through the reflected light of galvanometer, described scanner driver is connected with galvanometer and drives the galvanometer periodic rotary, and rf signal is added to and modulates described exciting light sources on the bias voltage; The photon energy of described exciting light sources is greater than the energy gap of semiconductor material.
According to excess optical carrier grating provided by the present invention, it is characterized in that described exciting light sources is that optical wavelength is the laser instrument of 830nm.
The ultimate principle of the present invention's utilization: exciting light incides semiconductor material surface excitation electron hole to being excess optical carrier, because this light beam goes into to have caused the material change of refractive, and be the signal of semiconductor material variations in refractive index by the conversion of signals that the rotation of galvanometer will be modulated exciting light sources, and this variations in refractive index signal is loaded with the amplitude phase information of modulated light source signal, reach the effect of periodic disturbance medium refraction index in this way, when transmission work light (photon energy is less than the material energy gap) passes the semiconductor that this refractive index generating period sexually revises, diffraction will take place.
Beneficial effect of the present invention: 1) pitch is adjustable, and dirigibility is good, can be applicable to correlator, in the systems such as spectrum analyzer; 2) pitch can be accomplished very for a short time, and promptly the grating beam splitting ability is strong, and frequency resolution is good.This excess optical carrier grating is a kind of diffraction grating, and it both can be used for the applied field of common diffraction grating, also can be used for correlator, in the systems such as spectrum analyzer.
Description of drawings
Fig. 1 is an excess optical carrier grating synoptic diagram of the present invention;
Fig. 2 goes into the back semiconductor for light beam and contains the sub-concentration of stream CONCENTRATION DISTRIBUTION synoptic diagram when reaching balance;
Fig. 3 injects behind the semiconductor material material section to the optical characteristics synoptic diagram of transmission work light for exciting light
Wherein, 1, silicon chip, 2, scanner driver, 3, galvanometer, 4, exciting light sources.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing.
As shown in Figure 1, comprise from top to bottom from left to right: silicon chip 1, scanner driver 2, galvanometer 3, exciting light sources 4, scanner driver 2 drives galvanometer 3 periodic rotary, and exciting light sources 4 is incident on the silicon chip 1 rf signal s through the reflected light of galvanometer 3
1(t) be added to bias voltage v
1On, and be used for modulating exciting light sources.Exciting light sources is that optical wavelength is the laser instrument of 830nm, selects the heavy doping silicon chip for use.
Excess optical carrier grating forms mechanism: exciting light has injected charge carrier after being incident to silicon chip, CONCENTRATION DISTRIBUTION as shown in Figure 2 when carrier concentration reached balance.
After injecting charge carrier, refractive index reduces, according to the notion of light path, and from this cross section, when light positive incident, the light path minimum of incident central point is big more away from incident central point light path more.So the point-like light beam is fashionable, the material of this moment is equivalent to concavees lens.A branch of flat light beam is gone into material surface and is equivalent to have groove one.Exciting light injects material section behind the semiconductor material to the optical characteristics of transmission work light as shown in Figure 3.
When modulated exciting light scan-type is passed through silicon chip, just form a lot of grating on the silicon chip, when transmitting work light diffraction will take place by this grating.
Claims (2)
1, a kind of excess optical carrier grating, it is characterized in that: comprise silicon chip, scanner driver, galvanometer and exciting light sources, described exciting light sources incides on the described silicon chip through the reflected light of galvanometer, described scanner driver is connected with galvanometer and drives the galvanometer periodic rotary, and rf signal is added to the described exciting light sources of modulation on the bias voltage; The photon energy of described exciting light sources is greater than the energy gap of silicon.
2, excess optical carrier grating according to claim 1 is characterized in that, described exciting light sources is that optical wavelength is the laser instrument of 830nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100495413A CN100470267C (en) | 2007-07-18 | 2007-07-18 | Excess optical carrier grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100495413A CN100470267C (en) | 2007-07-18 | 2007-07-18 | Excess optical carrier grating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101114029A CN101114029A (en) | 2008-01-30 |
| CN100470267C true CN100470267C (en) | 2009-03-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007100495413A Expired - Fee Related CN100470267C (en) | 2007-07-18 | 2007-07-18 | Excess optical carrier grating |
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| CN (1) | CN100470267C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101694531B (en) * | 2009-10-15 | 2011-01-05 | 电子科技大学 | Fresnel zone plate of excess optical carrier |
| CN102354062A (en) * | 2011-11-01 | 2012-02-15 | 电子科技大学 | One-dimensional excess photo-carrier photon crystal |
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2007
- 2007-07-18 CN CNB2007100495413A patent/CN100470267C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN101114029A (en) | 2008-01-30 |
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Granted publication date: 20090318 Termination date: 20130718 |