CN100466201C - Heat treatment device, heat treatment system and temperature control method for heat treatment apparatus - Google Patents

Heat treatment device, heat treatment system and temperature control method for heat treatment apparatus Download PDF

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Publication number
CN100466201C
CN100466201C CNB031427863A CN03142786A CN100466201C CN 100466201 C CN100466201 C CN 100466201C CN B031427863 A CNB031427863 A CN B031427863A CN 03142786 A CN03142786 A CN 03142786A CN 100466201 C CN100466201 C CN 100466201C
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temperature
heat treatment
film resistor
silicon chip
semi
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CN1542927A (en
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村上诚志
堀込正弘
河西繁
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Abstract

Provided is a heat treatment apparatus capable of quickly obtaining a temperature and its temperature distribution of a semiconductor wafer for temperature monitoring at the time of heat treatment without opening a processing container to the air. The heat treatment apparatus for applying predetermined heat treatment to an object W to be treated is provided with a treatment container 30 formed so as to be able to discharge air, placing stage 32 for placing the object W, gas supplying means 36 for supplying a gas into the processing container, heating means 34 for heating the object W, temperature control means 35 for controlling the temperature of the heating means on the basis of a predetermined parameter to be controlled, and process condition adjusting means 44 for adjusting the parameter to be controlled on the basis of sheet resistance of the semiconductor wafer Wm for temperature monitoring.

Description

The temperature-controlled process of annealing device, heat treatment system and annealing device
Technical field
The present invention relates to the temperature-measuring method of annealing device, heat treatment system and the annealing device of handled objects such as semi-conductor silicon chip.
Background technology
Generally, in the manufacturing process of semiconductor integrated circuit,, implement various film forming repeatedly, W for example, WSi, Ti, TiN, TiSi, SiO in order to form wiring figure, Holes fill or interlayer dielectric on the surface of semi-conductor silicon chip 2Deng film forming heat treatment.Except that this film forming heat treatment, also to carry out various heat treatments such as etching processing, oxide-diffused processing, polishing.In addition, this heat treatment also comprises heat treated, plasma treatment, non-plasma processing, annealing in process etc.
At this moment, for improving rate of finished products etc., need in silicon chip surface, implement various heat treatments equably, for this reason, must carry out good accuracy control and control to tonnage, the flow of handling gas, processing temperature etc., especially the management of processing temperature is crucial.Promptly adding man-hour, can cause heat treated uniformity to reduce as in silicon chip surface, producing temperature difference, so during heat treatment process, need to keep the uniformity of temperature in the silicon chip surface.
At this moment, the temperature of measuring silicon chip self in heat treatment is very difficult, even utilize thermocouple that the temperature of the mounting table of placement silicon chip or the heater of imbedding are wherein detected, generally also can produce several 10 ℃ temperature differences between the temperature of its temperature and silicon chip self, the temperature that correctly measure silicon chip self is quite difficult.For example heter temperature is about 680 ℃, and the actual temperature of silicon chip also can be hanged down about 80 ℃ than it, such as being 600 ℃, measuring temperature value and does not accurately reflect silicon temperature.
Therefore, as the inhomogeneity additive method of guaranteeing temperature in the silicon chip surface, people are known that the method for following use thermocouple.Promptly for the correct temperature of silicon chip self when understanding heat treatment, to on the surface of temperature measuring, be provided with a plurality of with the supervision silicon chip, thermocouple about 5 for example is set to approximate equality in the surface, be introduced in the container handling, obtain temperature conditions as target (homogeneous condition of temperature in the surface), promptly to the fiducial values such as temperature detection value of the input electrical power of heater or the thermocouple imbedded.And, when reality is heat-treated the product silicon chip, control with maintenance and use said temperature to measure input electrical power of obtaining with monitoring wafer or the temperature detection value of immersioning thermocouple etc., thereby guarantee the temperature homogeneity in the silicon chip surface.
At this moment, when firing equipment is heater, be arranged in the mounting table by for example concentric shape subregion, firing equipment is if a plurality of heating lamp in addition, will be divided into a plurality of districts to main irradiation area, and can drop into the independent control of electrical power each district or each zone.
Yet, many occasions such as in the time of when in to annealing device, keeping in repair, in the clean container or during changing process method, generally all need to use the temperature measuring that above-mentioned a plurality of thermocouples are housed to verify whether to heat and reach target temperature with monitoring wafer, and then whether checking has highly kept the uniformity of the interior temperature in surface of target.
At this moment, because need be set to the temperature measuring of band thermocouple on the mounting table with monitoring wafer, or under again it being removed after the mensuration, so not only will carry out lifting at that time to the pressure in the container handling, to atmosphere opening, monitoring wafer is reduced to about the normal temperature that the people can carry, the result measures sometimes and will expend a lot of time, for example to will cause the low of productivity ratio like this with 2 days.
In addition, because thermocouple is used in temperature measuring, so objectively cause the number of on silicon chip surface, installing to be not easy to understand the detailed temperature distribution in the silicon chip surface too much.
In addition, method of temperature when measuring heat treatment has proposed to use as disclosed methods such as patent documentations 1, promptly form dielectric film on the semi-conductor silicon chip surface, in silicon chip, mix impurity, after it is heat-treated, remove above-mentioned dielectric film, measure the film resistor of silicon chip surface, the temperature when understanding fully above-mentioned heat treatment thus.
But this method is to be to be object than the heat treatment of higher temperature about 1000～1200 ℃ with heat treatment temperature, so need to form and remove the above-mentioned insulating barrier that prevents that impurity from dispersing etc., corresponding working procedures is many, the problem of length consuming time with regard to having produced for these.And this part is the improvement invention of the previous disclosed patent documentation 2 of the applicant.
Patent documentation 1
Te Kaiping-No. 181436 communique
Patent documentation 2
The spy opens communique 2000-No. 208524
Summary of the invention
The present invention is conceived to above problem, and solves these problems effectively.The temperature-controlled process that the purpose of this invention is to provide a kind of annealing device, heat treatment system and annealing device, it can in the container handling or container handling can be communicated with heat treatment system that a plurality of container handlings of formation form to atmosphere opening, and temperature and Temperature Distribution thereof when obtaining temperature monitoring rapidly with the heat treatment of semi-conductor silicon chip.
First aspect present invention relates to a kind of annealing device, it is characterized by in the heat treated annealing device in that handled object is stipulated, comprising: but the container handling of exhaust; Place the mounting table of handled object; The gas supply member of supply gas in above-mentioned container handling; Heat the heater block of above-mentioned handled object; The temperature control unit that parameter is according to the rules controlled the temperature of above-mentioned heater block; And the processing conditions adjustment component of adjusting above-mentioned parameter according to temperature monitoring with the film resistor of semi-conductor silicon chip.
Like this, for example impurity is injected with ionic condition and be injected into semi-conductor silicon chip and the temperature monitoring that forms is destroyed with the semi-conductor silicon chip crystallization, become amorphous state, recrystallize by this temperature monitoring being heat-treated (annealing) with semi-conductor silicon chip with the temperature of regulation, the impurity that injects is dopant atom and for example silicon atom displacement, the activate state be can form,, free electron or hole formed promptly according to the conduction combination of shape and different.The amount in this free electron or hole during according to above-mentioned heat treatment treatment temperature and decide, so the process of treatment temperature is retained.After this temperature monitoring carried out to a certain degree cooling with semi-conductor silicon chip, measure the film resistor of lip-deep desirable most points, and then, with reference to the film resistor of the film resistor of obtaining in advance that determines and the dependency relation of the temperature of the mounting table of placing handled object, can obtain the heat treatment temperature of the premises and the situation of distribution thereof.
Therefore, because it is different with the existing temperature-measuring method that uses band lead-in wire thermocouple, can automatically move into to container handling and take out of the temperature monitoring semi-conductor silicon chip, so needn't in the container handling that for example is connected in the lock chamber of packing into to atmosphere opening, and needn't wait for annealing device and silicon temperature cool to room temperature degree, can obtain the surface film resistance of temperature monitoring at short notice, temperature when understanding its heat treatment and Temperature Distribution thereof with semi-conductor silicon chip.Therefore, utilize the processing conditions adjustment component this result to be fed back to the temperature control unit of heater block, even produce that timeliness changes or more the inside component parts of heat exchange treatment device heat condition is changed, temperature in the time of also often keeping the heat treatment as target is so can often keep the reproducibility of uniformity and treatment temperature in the surface of Temperature Distribution.
At this moment, the regulation of second aspect present invention for example, above-mentioned processing conditions adjustment component has by obtaining the predetermined pattern function of dependency relation of above-mentioned film resistor and mounting table temperature.
In addition, the regulation of third aspect present invention for example, above-mentioned pattern function is the pattern function when forming precoated shet on the surface of above-mentioned mounting table.
In addition, the regulation of fourth aspect present invention for example, the said temperature monitoring is set at the optimum value that inclination angle and torsion angle do not produce channeling effect with semi-conductor silicon chip, and the ion beam that carries out impurity injects.
In addition, the regulation of fifth aspect present invention for example, the said temperature monitoring is that concentration with regulation imports impurity formation to the surface of above-mentioned semi-conductor silicon chip with semi-conductor silicon chip.
In addition, the regulation of sixth aspect present invention for example, above-mentioned semi-conductor silicon chip surface is the P type, above-mentioned impurity is phosphorus.
In addition, the regulation of seventh aspect present invention for example, a plurality of thermals treatment zone that are divided on the corresponding above-mentioned mounting table of above-mentioned heater block and be divided into a plurality ofly, above-mentioned heater block can carry out temperature control individually to above-mentioned each subregion.
In addition, the regulation of eighth aspect present invention for example, above-mentioned heat treatment is any in heat treated, plasma treatment, non-plasma processing, film forming processing, annealing in process, the etching processing.
Ninth aspect present invention relates in a kind of heat treated heat treatment system that handled object is stipulated, it is characterized by, comprising: the parameter that has for the heat treatment that above-mentioned handled object is stipulated is according to the rules carried out a plurality of annealing devices of temperature controlled temperature control unit to being located at inner heater block; Be connected in the common carrying room of above-mentioned annealing device by gate valve to be opened/closed; Be located at carrying mechanism in the above-mentioned common carrying room for carrying above-mentioned handled object; Be connected in the film resistor measuring cell of above-mentioned common carrying room by gate valve to be opened/closed; Be arranged on film resistor determinator in the film resistor measuring cell for measuring the said temperature monitoring with the film resistor on the surface of semi-conductor silicon chip; The film resistor of obtaining according to above-mentioned film resistor determinator is adjusted the processing conditions adjustment component of above-mentioned parameter.
Thus, in heat treatment system, be provided with the film resistor determinator, so needn't be fetched into temperature monitoring with semi-conductor silicon chip and just can measure its surperficial film resistor outside the heat treatment system, and its result is fed back to the temperature control unit side from processing conditions adjustment component side.
Tenth aspect present invention relates to a kind of heat treatment system, it is characterized by, in the heat treated heat treatment system that handled object is stipulated, comprising: the parameter that has for the heat treatment that above-mentioned handled object is stipulated is according to the rules carried out a plurality of annealing devices of temperature controlled temperature control unit to being located at inner heater block; Be connected in the common carrying room of above-mentioned annealing device by gate valve to be opened/closed; Be located at carrying mechanism in the above-mentioned common carrying room for carrying above-mentioned handled object; For measuring the film resistor determinator that the said temperature monitoring is provided with the film resistor on semi-conductor silicon chip surface; The film resistor of obtaining according to above-mentioned film resistor determinator is adjusted the processing conditions adjustment component of above-mentioned parameter.
At this moment, the present invention the tenth regulation on the one hand for example in the above-mentioned annealing device, in the above-mentioned common carrying room, can be pumped into vacuum in the above-mentioned film resistor measuring cell, makes it to become vacuum environment.
In addition, the regulation of the present invention the 12 aspect for example, in the above-mentioned annealing device, can be pumped into vacuum in the above-mentioned common carrying room and become vacuum environment, and above-mentioned film resistor determinator is arranged under the atmospheric pressure environment.
In addition, the regulation of the present invention the 13 aspect for example, above-mentioned processing conditions adjustment component has the predetermined pattern function by the dependency relation of obtaining above-mentioned film resistor and mounting table temperature.
In addition, the regulation of the present invention the 14 aspect for example, above-mentioned pattern function is the pattern function when forming precoated shet on the surface of above-mentioned mounting table.
In addition, the regulation of the present invention the 15 aspect for example, the said temperature monitoring is set at the optimum value that inclination angle and torsion angle do not produce channeling effect with semi-conductor silicon chip, and the ion beam that carries out impurity injects.
In addition, the regulation of the present invention the 16 aspect for example, the said temperature monitoring is to the surperficial implanted dopant formation of above-mentioned semi-conductor silicon chip with the temperature of regulation with semi-conductor silicon chip.
In addition, the regulation of the present invention the 17 aspect for example, the semi-conductor silicon chip surface is the P type, above-mentioned impurity is phosphorus.
In addition, the regulation of the present invention's the tenth eight aspect for example, a plurality of thermals treatment zone that are divided on the corresponding above-mentioned mounting table of above-mentioned heater block are divided into a plurality of, and above-mentioned heater block can carry out temperature control individually to above-mentioned each subregion.
In addition, the regulation of the present invention the 19 aspect for example, above-mentioned heat treatment be heat treated, plasma treatment, non-plasma processing, film forming processing, annealing in process, and etching processing in any.
The present invention the 20 aspect relates to a kind of temperature-controlled process of annealing device, it is characterized by, in the temperature-controlled process of the heat treated annealing device that utilizes heater block that the handled object that is placed on the mounting table in the container handling is stipulated, comprising: the heat treatment step of in above-mentioned container handling, temperature monitoring being heat-treated with semi-conductor silicon chip with the temperature of regulation; The mensuration operation of measuring with the film resistor at a plurality of positions on semi-conductor silicon chip surface is monitored in the said temperature monitoring of taking out in the above-mentioned container handling after the heat treatment with semi-conductor silicon chip, to said temperature; And according to the film resistor that obtains and the film resistor of obtaining in advance and the dependency relation of mounting table temperature, the parameter adjustment operation that the parameter of said temperature control assembly is adjusted.
Report unusual when at this moment, the present invention the 20 regulation on the one hand for example, above-mentioned thin-film electro resistance are outside allowed band.
In addition, the regulation of the present invention the 22 aspect for example, above-mentioned each operation regularly or are as required carried out and each thin-film electro resistance of obtaining can be stored as the timeliness change procedure with showing aperiodically.
In addition, for example the regulation of the present invention the 23 aspect is adjusted in the operation at above-mentioned parameter, by obtaining the dependency relation of above-mentioned film resistor and mounting table temperature, with reference to predetermined pattern function.
In addition, the regulation of the present invention the 24 aspect for example, above-mentioned pattern function is the pattern function when forming precoated shet on the surface of above-mentioned mounting table.
In addition, the regulation of the present invention the 25 aspect for example, the said temperature monitoring is set at the optimum value that inclination angle and torsion angle do not produce channeling effect with semi-conductor silicon chip, and the ion beam that carries out impurity injects.
In addition, the regulation of the present invention the 26 aspect for example, the said temperature monitoring is to the surperficial implanted dopant formation of above-mentioned semi-conductor silicon chip with the temperature of regulation with semi-conductor silicon chip.
In addition, the regulation of the present invention the 27 aspect for example, above-mentioned semi-conductor silicon chip surface is the P type, above-mentioned impurity is phosphorus.
In addition, the regulation of the present invention's the 20 eight aspect for example, a plurality of thermals treatment zone that are divided on the corresponding above-mentioned mounting table of above-mentioned heater block are divided into a plurality of, and above-mentioned heater block can carry out temperature control individually to above-mentioned each subregion.
In addition, the regulation of the present invention the 29 aspect for example, above-mentioned heater block forms multilayer at the thickness direction of above-mentioned mounting table, and a plurality of thermals treatment zone that are divided on the corresponding above-mentioned mounting table of while are divided into a plurality of, and above-mentioned heater block can carry out temperature control individually to each subregion of above-mentioned each layer.
The present invention the 30 aspect relates to a kind of temperature-controlled process of annealing device, it is characterized by, and in the temperature-controlled process of annealing device, comprising: the heat treatment step that temperature monitoring is heat-treated with semi-conductor silicon chip; The mensuration operation that monitoring is measured with the film resistor of semi-conductor silicon chip to said temperature; The operation that the film resistor of the film resistor measured last time and this mensuration is compared; Reach and when above-mentioned comparative result overshoot value is above, send the operation of warning.
In addition, the present invention the 30 regulation on the one hand for example, the mensuration of above-mentioned film resistor regularly or is aperiodically carried out.
In addition, the regulation of the present invention the 32 aspect for example, above-mentioned heat treatment is any in heat treated, plasma treatment, non-plasma processing, film forming processing, annealing in process and the etch processes.
Description of drawings
Fig. 1 is the concise and to the point pie graph of the 1st embodiment that expression comprises the heat treatment system of annealing device.
Fig. 2 is the schematic plan view of an example that expression is located at the heater block of mounting table.
Fig. 3 is the profile of the other example of expression mounting table.
Fig. 4 is the figure of the temperature relation of film resistor when representing that only changing ion concentration heat-treats and heater.
Fig. 5 is the figure that the expression heat-treat condition is set at the experimental result of identical condition, the reproducibility when a plurality of temperature monitorings are implemented heat treatment with semi-conductor silicon chip.
Fig. 6 is the figure of the 2nd example of dependency relation of the temperature of expression film resistor and heater (mounting table).
Fig. 7 is the figure of the 3rd example of dependency relation of the temperature of expression film resistor and heater (mounting table).
Fig. 8 is the figure of the 4th example of dependency relation of the temperature of expression film resistor and heater (mounting table).
Fig. 9 is the figure of the 5th example of dependency relation of the temperature of expression film resistor and heater (mounting table).
Figure 10 is the agent kind of expression when the ion of monitoring wafer is injected and the figure of the applicatory temperature range of ion concentration (dosage) when carrying out various change.
Figure 11 is that expression uses monitoring wafer to carry out the figure of an example of heater adjustment processing.
Figure 12 is the schematic plan view of the 2nd embodiment of expression heat treatment system.
Figure 13 is the concise and to the point pie graph of expression film resistor determinator.
Figure 14 is the schematic plan view of the 3rd embodiment of expression heat treatment system.
Symbol description: 2 heat treatment systems; 4,4A～4C annealing device; 6 lock chamber of packing into; Boxlike chambers 8; 30 container handlings; 32,32A～32C mounting table; 34,34A～34F heater (heater block); 35 temperature control units; 36 shower nozzles (gas supply member); 44 processing conditions adjustment component; 60 common carrying rooms; 62 film resistor measuring cells; 64 film resistor determinators; 66 monitor stations; 684 terminals measurement heads; 76 atmospheric side carrying rooms; The W semi-conductor silicon chip; Wm temperature monitoring semi-conductor silicon chip.
Embodiment
Below, an embodiment to the temperature-measuring method of relevant annealing device of the present invention, heat treatment system and annealing device carries out detailed explanation with reference to the accompanying drawings.
The 1st embodiment
Fig. 1 is the concise and to the point pie graph of the 1st embodiment that expression comprises the heat treatment system of annealing device, and Fig. 2 is the schematic plan view that expression is located at an example of the heater block on the mounting table.
At first, the heat treatment system that comprises the annealing device that enforcement the inventive method is used is carried out brief description.This heat treatment system 2 is mainly by to the handled object heat treated annealing device 4 stipulated of semi-conductor silicon chip W for example; The lock chamber 6 of packing into that can be connected with annealing device 4 or cut off by gate valve G1; And the boxlike chamber 8 that can be connected with the lock chamber 6 of packing into by gate valve G2 constitutes with connecting or cut off.
8 inside, above-mentioned boxlike chamber are provided with the box platform 12 that mounting can be accommodated the box 10 of many pieces of semi-conductor silicon chip W, and this box platform 12 is located at the upper end of the elevating lever 14 of the bottom that connects boxlike chamber 8, can lifting and rotation.On the sidewall of this boxlike chamber 8, be provided with and take out of the gate G3 that moves into box 10, in boxlike chamber 8, be respectively equipped with the gas introduction port 16 of introducing inert gases such as nitrogen and the gas exhaust port 18 of discharging indoor environment gas in addition.And, in illustrated example, in box 10, accommodate for example 1 piece of temperature monitoring semi-conductor silicon chip (following also claim " monitoring wafer ") Wm that the inventive method is used.
On the other hand, between above-mentioned boxlike chamber 8 and annealing device 4, transmit, in the above-mentioned lock chamber 6 of packing into, be provided with the carrying arm 20 of the multi-joint structure that can stretch and rotate for making semi-conductor silicon chip W.In addition, in packing lock chamber 6 into, this is provided with gas introduction port 22 from inert gases such as nitrogen to inside that introduce and the gas exhaust port 24 of discharging inner environmental gas.And the vacuum pump 26 across the centre on this exhaust outlet 24 is connecting vacuum pumping system 28, can be being evacuated in the lock chamber 6 of packing into.
On the other hand, above-mentioned annealing device 4 has with formation container handlings 30 cylindraceous such as for example aluminium, and its inside is provided with the mounting table 32 of placing silicon chip W.Imbed in this mounting table 32 as shown in Figure 2 be divided into for example heater 34 of the heater block in 3 districts of concentric circles, can heat silicon chip W.Here be divided into interior week, middle week, 3 districts of periphery, dispose heater 34A, 34B, 34C respectively in each district.And, this district's number is not particularly limited, and the form in district is not limited to concentric circles, for example also can be the subregion of the aggregate of circle.Above-mentioned each heater 34A～34C can drop into the control of electrical power to each district, controls each district and has also imbedded thermocouple (not shown) for carrying out it.And above-mentioned each heater 34A～34C carries out temperature controlled temperature control unit 35 respectively with controlling object parameter according to the rules and links to each other, and can carry out aforesaid independent temperature control.
In addition, on this mounting table 32, be provided with silicon chip and move into the lift pin (not shown) that carries out its lifting when taking out of.The gas supply member that top in above-mentioned container handling 30 is provided with the required usefulness such as processing gas of in container handling 30 introducing is shower nozzle 36 for example.In addition, be provided with the gas discharge outlet 38 of discharging internal environment gas in the bottom.And, on this gas discharge outlet 38, connecting the vacuum pumping system 42 that is provided with vacuum pump 40 midway, can be being evacuated in the container handling 30.And said temperature control assembly 35 is connected with the processing conditions adjustment component of for example being made up of microcomputer etc. 44, as described later, can adjust the controlling object parameter of said temperature control assembly 35 as required according to the film resistor of monitoring wafer Wm.Here, above-mentioned monitoring wafer Wm utilizes ion beam implantation etc. to inject the 2nd conduction shape impurity with the concentration of regulation on the surface of the silicon chip that mixes the 1st conduction shape impurity to form.
And above-mentioned processing conditions adjustment component 44 has the memory 46 of the usefulness such as data that need when storage is adjusted, and also has the warning portion 48 that the operator is sent warning usefulness in the occasion of regulation simultaneously.Here, above-mentioned film resistor is by directly input of operator's manual operations, or directly automatic input is from the measured value of film resistor determinator described later.And, the film resistor and the mounting table 32 that in above-mentioned memory 46, have monitoring wafer Wm, promptly utilize the predetermined pattern function of dependency relation that obtain in advance and temperature resistance heater 34 here, in this pattern function, mounting table 32 is measured, can be made resistance heater 34 reach specified temp with reference to film resistor.In other words, because produce dependency relation between the Exposure Temperature of monitoring wafer Wm and its film resistor, just can know the Exposure Temperature of monitoring wafer Wm so know its film resistor.In the processing of reality, rely on the pressure in the container handling 30 at that time to produce several ℃～several 10 ℃ temperature difference between silicon chip W (monitoring wafer Wm) and the mounting table 32 (heater block 34), the temperature of mounting table 32 is than silicon temperature height.And the said temperature difference is by container inner pressure at that time and well-determined, so when working out above-mentioned pattern function, work out out the pattern function of having considered the said temperature difference.And the integral body of this heat treatment system 2 utilizes master control part that not shown computer forms that the action of each one of comprising processing conditions is controlled.
Here, heater 34A, the 34B that at grade a plurality of thermals treatment zone is arranged by concentric circles, the example of 34C are illustrated.But each thermal treatment zone also can constitute multi-ply construction in vertical direction, and each layer added thermal control separately.As an example, for example be applicable to also that the world openly numbers disclosed mounting table among the W000/70658, for example shown in the profile of mounting table that is 2 layers of structure as heater among Fig. 3, can be set as the heater on the same plane in above-mentioned 3 districts separately the heater 34A～34C of each 2 floor, the structure of 34D～34F, independently heater 34A～34C, 34D～34F reach evenly heating in the silicon chip surface to utilize 6 of totals.
Secondly, the inventive method that the heat treatment system 2 that utilizes above formation is implemented describes.
At first, generally between boxlike chamber 8 and annealing device 4, transmit, will make carrying arms 20 in the lock chamber 6 of packing into flexible and carry out rotatably semi-conductor silicon chip W.Often remain the atmospheric pressure degree with inert gas in the above-mentioned boxlike chamber 8, in addition, container handling 30 inherences carry out being in vacuum state (reduced pressure atmosphere) during the continuous processing of silicon chip.Therefore, the lock chamber of packing into 6 is interior whenever silicon chip W moves into and takes out of, will be concatenated to form atmospheric pressure state and vacuum state for carrying out the pressure adjustment between lock chamber of packing into 6 and the container handling 30, the result needn't destroy vacuum states in the container handling 30 and carry out moving into of silicon chip W and take out of.
But, about the heater 34A～34C in the mounting table 32, be to pre-determine the input electrical power, so that the silicon chip W that is placed on the mounting table 32 keeps the higher uniformity state of temperature in the surface and the processing temperature of maintenance target, but, when for example carrying out the cleaning in the container handling 30, during changing process method, and the parts etc. of changing internal tank when carrying out various maintenance, various characteristics can change, cause the processing temperature that can not make above-mentioned silicon chip keep target, or keep the interior uniformity in surface of heating-up temperature than the highland.
For this reason, need the serviceability temperature monitoring to check whether kept Temperature Distribution in the suitable surface in the past, and whether can heat the processing temperature that keeps target with semi-conductor silicon chip Wm.And, need when not keeping, adjust, increase and decrease drops into electrical power on the whole, and perhaps indivedual increases and decreases are to the input electrical power of each heater 34A～34C.
This temperature monitoring can be housed in the box 10 in advance with semi-conductor silicon chip Wm, and the gate G3 that also can pass through boxlike chamber 8 where necessary introduces in the boxlike chamber 8.This temperature monitoring uses for example substrate of the silicon single crystal of P shape of the 1st conduction shape with semi-conductor silicon chip Wm, and mixing the 2nd conduction shape thereon is the impurity of N shape, mixes for example phosphonium ion with the concentration of regulation here.
At this moment, ion implanting conditions is that for example with the energy injection phosphonium ion of 80KeV, concentration (dosage) is the above value of threshold dose, for example is 5 * 10 14Atms/cm 2About, and then for do not produce channeling effect when injecting ion, the inclination angle is set at 7 degree, torsion angle is set at about 35 degree.
Like this, mix the process of mixing of impurity to silicon chip and finish, then move on to heat treatment step.At first, make to return in the lock chamber 6 of packing into and boxlike chamber 8 interior roughly the same atmospheric pressure degree, open gate valve G2.And, make the carrying arms 20 in this lock chamber 6 of packing into flexible, take out temperature monitoring in the box 10 with semi-conductor silicon chip Wm and put it in the lock chamber 6 of packing into by open gate valve G2.Then, close above-mentioned gate valve G2 after, being evacuated in this lock chamber 6 of packing into, make it with container handling 30 in pressure roughly the same.
Like this, the pressure in pressure in the lock chamber of packing into 6 and the container handling 30 is roughly the same, opens gate valve G1 and makes connection in pack into lock chamber 6 and the container handling 30, and temperature monitoring is moved in the container handling 30 with semi-conductor silicon chip Wm, places it on the mounting table 32.And, closing gate valve G1, the heat treatment that monitoring is stipulated with semi-conductor silicon chip Wm to said temperature.Here, use for example 8 inches silicon chip, the heat-treat condition of this moment is, flow with 200sccm is supplied with for example nitrogen from showerhead 36, tonnage is 0.3Torr (40Pa), and then processing temperature is set at and does not produce the processing temperature that impurity disperses, and for example is set at 680 ℃ (heter temperatures).And, be decided to be for example 180 seconds process time.Like this, by temperature monitoring is heat-treated (annealing) with semi-conductor silicon chip Wm, ion formerly injects the ruined part of crystallization that causes, and the silicon atom displacement on dopant atom and the lattice produces free electron at this, becomes activated state.The amount of the free electron that produce this moment depends on the actual heat treatment temperature of this part on monitoring wafer surface, promptly depend on the temperature that exposed at that time, so measure by film resistor, just can understand the temperature of the reality of its part to the each several part on as described later monitoring wafer surface.Specific embodiment is, each film resistor on the monitoring wafer surface corresponding with each thermal treatment zone of heater 34A, the 34B of 3 concentric circles shown in Figure 2,34C is measured, and just can obtain purpose is to be used for mutual temperature data relatively.
Like this, heat treatment step is finished, and then transfers to the mensuration operation.Here, at first make carried out on the mounting table 32 heat treated temperature monitoring with semi-conductor silicon chip Wm be cooled to can conveyance temperature for example about 100 ℃, and open gate valve G1, with keep in the lock chamber 6 of packing into of vacuum state of uniform pressure and be communicated with in advance with in the container handling 30, get in the lock chamber 6 of packing into semi-conductor silicon chip Wm having carried out heat treated temperature monitoring.And, close this gate valve G1 after, in the lock chamber 6 of packing into, introduce N 2Gas reverts to atmospheric pressure, and then, open gate valve G2, be communicated with the boxlike chamber of keeping atmospheric pressure state, this has been carried out heat treated temperature monitoring moved in the box 10 with semi-conductor silicon chip Wm., this has been carried out heat treated temperature monitoring has taken out of the outside with semi-conductor silicon chip Wm thereafter, by the operator to the multiple spot on monitoring wafer surface for example the film resistor at 49 positions measure and obtain.Like this, measure operation and finish, then transfer to the temperature studies operation.Here, under heat-treat condition (gaseous species, gas flow, tonnage, processing temperature, processing time etc.) as hereinbefore, monitoring wafer is carried out heat treatment in advance, the form of the relation of the film resistor obtained in advance of expression and heat treatment temperature (temperature of heater or mounting table) or figure as pattern function, be prepared in advance, and store in advance in the memory 46 of processing conditions adjustment component 44.Work out this pattern function, use existing temperature-measuring method at a plurality of thermocouples of monitoring wafer surface attachment.Thus, the dependency relation of the film resistor actual temperature process local with it is determined by unique.At this moment, as mentioned above, produce the temperature difference of the tonnage when depending on this heat treatment between monitoring wafer and the mounting table 32 (heater block 34), so work out out the pattern function of this temperature difference of at first determining of having considered tonnage and having formed (several years～several 10 degree).With reference to this pattern function, utilize the film resistor at 49 positions that the said determination operation obtains, the temperature when obtaining the heat treatment of counterpart separately.It is weaved into chart just can draw the surperficial interior uniformity of temperature monitoring with temperature, Temperature Distribution or the temperature of semi-conductor silicon chip Wm.
Obtain the surperficial interior inhomogeneity operation of temperature monitoring from this film resistor with temperature, Temperature Distribution or the temperature of semi-conductor silicon chip Wm, be to carry out automatically by for example the film resistor of measuring being input to above-mentioned processing conditions adjustment component 44 by the operator, temperature control unit 35 is adjusted the controlling object parameters so that for example mounting table 32 (heater 34A～34C) keeps the temperature of target and keeps uniformity in the surface of temperature.In addition, as setup parameter, to these processing conditions adjustment component 44 input processing temperatures.
Like this, by above-mentioned monitoring wafer Wm is heat-treated aperiodically as required termly or after clean and when changing component parts in the container etc., obtain its film resistor, the controlling object parameter is adjusted, processing temperature in the time of can making the treatment product silicon chip is thus often kept the processing temperature of target, and, can be than uniformity in the surface of highland holding temperature.The mensuration of the film resistor of such monitoring wafer Wm except that above-mentioned, can be carried out when device is gone into operation, in the needs such as when breaking down at any time.
In addition, according to the inventive method, can be without thermocouple and temperature, its Temperature Distribution and surface thereof when not destroying vacuum states in the container handling 30 and can understand temperature monitoring with the heat treatment of semi-conductor silicon chip Wm in uniformity, so it is all very short that the pressure in the container handling 30 is adjusted the cooling time of time, silicon temperature, can promptly carry out the inhomogeneity evaluation of temperature in the surface.
In addition, objectively do not establish thermocouple, only measure film resistor and just can understand heat treatment temperature, so can obtain detailed Temperature Distribution by the film resistor of measuring a plurality of positions.
And then, open and prevent the disperse dielectric film of usefulness of impurity shown in flat 1-No. 181436 communiques because form the spy, need not remove, so can more promptly obtain Temperature Distribution.
In addition, the film resistor of monitoring wafer Wm termly above-mentioned or that measure aperiodically is the information of expression timeliness, so be stored in the memory 46 as ag(e)ing process, can be presented at ag(e)ing process on the not shown display unit as required, confirm for the operator.
In addition, when measuring the film resistor of monitoring wafer Wm, surpass tolerance when measuring last time in this value, under the occasion of generation great changes, the situation that can be used as unusual generation for example starts warning portion 48, with its context notification operator.
Here, for obtaining best impurity concentration, only the temperature monitoring that uses in the foregoing description is carried out various changes with the ion concentration of semi-conductor silicon chip Wm, other conditionally completes have been undertaken and above-mentioned same temperature measuring by same settings.The relation of the film resistor of this moment and the temperature of heater is shown in Fig. 4.
Here, the ion concentration of foreign matter of phosphor uses 5 * 10 14Atms/cm 2(embodiment that illustrates previously), 1 * 10 15Atms/cm 2, and 3 * 10 15Atms/cm 23 kinds.In addition, the film resistor of the longitudinal axis scale of taking the logarithm, figure mark the mean value of measuring 49 at position.Can distinguish from figure shown in Figure 4, irrelevant with the ion concentration of foreign matter of phosphor, each curve is along with the temperature of heater (mounting table) rises to 720 ℃ (part is from 600 ℃) since 530 ℃, and film resistor progressively descends, and exists clear and definite dependency relation between the two.And distinguish that particularly the ion concentration of impurity is 5 * 10 14Atms/cm 2The time, the changing condition of film resistor has linearity very much, and the temperature when film resistor is asked heat treatment is very convenient, is very gratifying.The characteristic curve of the film resistor that obtains here is stored in the memory 46 of above-mentioned processing conditions adjustment component 44 in advance as pattern function.
Secondly, fixedly being set at 5 * 10 with the ion implantation concentration of the impurity of semi-conductor silicon chip for temperature monitoring 14Atms/cm 2, the heat-treat condition in gaseous species, gas flow, tonnage, processing time etc. is set at identical with above-mentioned heat-treat condition, the experiment of the reproducibility when having carried out implementing heat treatment with semi-conductor silicon chip for many pieces of temperature monitorings.This reproducibility result of experiment is shown in Fig. 5.Here, the date is the 1st day～the 3rd day, changed in 3 days, and then the multiple spot (6 point) in heter temperature is 530 ℃～720 ℃ scope has carried out heat treatment at that time.
From this figure shown in Figure 5 as can be known, scale at the film resistor of the longitudinal axis is in the figure of logarithmic scale, in the temperature of heater is 530 ℃～720 ℃ scope, roughly being in line property decline of rising film resistor along with temperature, so show clear and definite dependency relation, and then, when implementing on the change date, almost do not have mutual deviation, reproducibility is very good.Can confirm thus to obtain high-precision temperature and Temperature Distribution.
And the heat-treat condition of using in the present embodiment only is the simple example of enumerating, and is not limited to above-mentioned condition certainly.For other heat-treat condition, obtain above-mentioned pattern function in advance, and this pattern function is stored in the memory 46 in advance.This point will be narrated in the back.
Here, the action to above-mentioned processing conditions adjustment component 44 describes.The formation of this processing conditions adjustment component 44 can be diverted from one use to another the technology that the applicant had for example before announced in the spy opens 2002-No. 343726 communiques.
Setup parameter to above-mentioned processing conditions adjustment component 44 inputs is meant that to the influential parameter of above-mentioned controlling object parameter this setup parameter is the computer (not shown) that utilizes all actions of this heat treatment system 2 of control, according to the processing temperature of method output.In addition, be target temperature to the controlling object parameter of above-mentioned temperature control unit 35 outputs corresponding to temperature from this processing conditions adjustment component 44 as the realistic objective of heater.
Above-mentioned setup parameter is that processing temperature utilizes predefined method to be supplied with by master computer, and in addition, the controlling object parameter is the desired value temperature r of heater here tUtilize above-mentioned processing conditions adjustment component 44 to obtain.
In this processing conditions adjustment component 44, store the pattern function of determining with the dependency relation of Fig. 4 and heter temperature (mounting table temperature) shown in Figure 5 and film resistor in advance, calculate the set point D of input setup parameter wherein simultaneously t, promptly calculate the target temperature r of controlling object parameter here according to the set point of processing temperature tThis is because the processing temperature of silicon chip is 500 when spending, originally if can realize said temperature to heater heats to 520 degree, but thereafter sometimes because of timeliness like heter temperature not being heated to 550 degree, then can not realize above-mentioned processing temperature.And as mentioned above, above-mentioned Fig. 4 and figure shown in Figure 5 will consider that the temperature of heater is pre-rendered with the temperature difference of the temperature of the silicon chip of reality.
Above this point is specifically described.As previously mentioned, the dependency relation pattern function of the film resistor in the time of obtaining monitoring wafer Wm in advance and it is carried out heat treated is stored in this pattern function in the memory 46 of above-mentioned processing conditions adjustment component 44.
Here, in the present embodiment, can use ARMA model (ARMA:autoregressive moving-average model), autoregression model (AR:autoregressive model), interative least square method, Kalman filter, method of maximum likelihood etc. as pattern function.
But, in general film forming is handled, before actual film forming on the product silicon chip, the internal face of the surface of mounting table 32 and container handling 30 first-class be pre-formed with silicon chip on the identical very thin skim of kind of film of film forming, pre-coating film is set, makes the heat condition of internal tank keep stable.But when obtaining Fig. 4 and figure shown in Figure 5, wish after forming pre-coating film, monitoring wafer Wm to be carried out the data that heat treated (annealing) obtains film resistor.But, also can before forming pre-coating film, carry out the data that heat treated (annealing) obtains film resistor to monitoring wafer Wm, this kind occasion, these data for example can uses when the adjustment of the heater 34 that carries out mounting table 32 etc.In other words, with pre-coating film have or not that it doesn't matter, can measure film resistor with monitoring wafer Wm simply at any time as required.
In addition, as being suitable for heat treatment of the present invention, all that comprise that plasma treatment, non-plasma handle can both be suitable for the heat treatment that silicon chip W carries out heat treated, for example can be applicable to all heat treatments such as pre-clean processes of processings of hot CVD film forming, oxide-diffused processing, annealing in process, upgrading processing, polishing, the processing of plasma CVD film forming, etch processes, the processing of removal natural oxide film.
In addition, the kind (agent kind) of the impurity that ion injects is not defined as phosphorus, many elements, and for example H, Li, Be, B, C, N, O, F, Ne, Na, Mg, Al etc. can both use.In this case, the light more element of atomic weight can be realized activate with few heat energy more easily, so when being applicable to pattern function when making the heat treatment of carrying out low temperature more.In addition, opposite in above-mentioned element during with heavier element, when being applicable to the pattern function the when heat treatment of high temperature is more carried out in making.In addition, the ion concentration of injection can be 5 * 10 13～5 * 10 15Atoms/cm 2Scope in, the big more heat treatment that can adapt to low temperature more of ion concentration, the more little heat treatment that can adapt to high temperature more of the concentration of ion.
As mentioned above, by agent kind and ion temperature that suitable selection ion injects, monitoring wafer Wm of the present invention can adapt to 200～1200 ℃ vast scope.
In addition, the acceleration when ion is injected can be not particularly limited, and for example its size is just can obtain the monitoring wafer Wm that film resistor and heating-up temperature have sufficient dependency relation about 10KeV～400KeV.
And in processing conditions adjustment component 44, the treatment conditions of processing temperature of the method for carrying out corresponding to this annealing device etc. will pre-deposit the pattern function of the monitoring wafer Wm that has heat-treated certainly.
Below, other object lesson of the pattern function of reality is described.
Fig. 8 is the figure of the 2nd example of dependency relation of the temperature of expression film resistor and heater (mounting table).As shown in Figure 6, in 500～680 ℃ scope, fully display here as can be known with the dependency relation of film resistor.The ion implanting conditions of the relevant monitoring wafer Wm here is that the injection element is a phosphorus, and ion concentration is 1.5 * 10 14Atms/cm 2The heat-treat condition of monitoring wafer Wm is that the flow of nitrogen is that 3600sccm, pressure are 5Torr (665Pa), processing time 180 seconds.And this pattern function is used for the annealing device that the film forming of TiN film is for example used.
Fig. 7 is the figure of the 3rd example of dependency relation of the temperature of expression film resistor and heater (mounting table).As shown in Figure 7, in 450～550 ℃ scope, fully display with the state that is bordering on straight line here as can be known with the dependency relation of film resistor.The ion implanting conditions of the relevant monitoring wafer Wm here is that the injection element is a phosphorus, and ion concentration is 5.0 * 10 14Atoms/cm 2The heat-treat condition of monitoring wafer Wm is, the flow of argon gas be 500sccm, pressure be 93.3Pa, processing time are 3 minutes, 5 minutes, 10 minutes 3 kinds.And this pattern function is used for the annealing device that the film forming of WSi (tungsten silicide) film is for example used.
Fig. 8 is the figure of the 4th example of dependency relation of the temperature of expression film resistor and heater (mounting table).As shown in Figure 8, in 500～600 ℃ scope, fully display here as can be known with the dependency relation of film resistor.And, in temperature below 500 ℃, because of film resistor is roughly saturated, so that this zone is used for temperature measuring is very difficult.The ion implanting conditions of the relevant monitoring wafer Wm here is that the injection element is an arsenic, and ion concentration is 1.0 * 10 15Atoms/cm 2The heat-treat condition of monitoring wafer Wm is that the flow of nitrogen is that 1000sccm, pressure are that 1Torr (133Pa), processing time are 180 seconds.And this pattern function is used for the annealing device that the film forming of the CVD of metal film is for example used.
Fig. 9 is the figure of the 5th example of dependency relation of the temperature of expression film resistor and heater (mounting table).As shown in Figure 9, in the scope of 200～500 ℃ ratio lower temperature, fully display here as can be known with the dependency relation of film resistor.The ion implanting conditions of the relevant monitoring wafer Wm here is that the injection element is a boron, and ion concentration is 1.0 * 10 15Atoms/cm 2The heat-treat condition of monitoring wafer Wm is that the flow of nitrogen is that 1000sccm, pressure are that 51Torr (6783Pa), processing time are 30 minutes.And this pattern function is used for the annealing device that the CVD film forming of metal film is for example used.
And then, the agent kind the when ion of monitoring wafer Wm is injected, and the temperature range applicatory of the monitoring wafer Wm of ion concentration (dosage) when carrying out various change study, existing its evaluation result is described.Figure 10 is the figure of the above-mentioned evaluation result of expression.From this figure as can be known, the element low weight with B, H, He, Li, Be etc. uses as the agent kind, then also can obtain the dependency relation of film resistor and heating-up temperature in 100～500 ℃ lower low-temperature space scope of temperature.
In addition, discovery is used P (phosphorus) and its dosage is suited to change, and then its Applicable temperature scope also can be applicable to 350～720 ℃ middle temperature area, and then can be applicable to the high-temperature area of 700～1200 ℃ of scopes.Particularly use the occasion of B and As etc., can be applicable to the high-temperature area of 700～1200 ℃ of scopes.At this moment, dosage can be 5.0 * 10 13～5.0 * 10 15Atoms/cm 2Scope in carry out various changes.Accelerating voltage when in addition, ion injects also can suitably be selected in the scope of 10KeV～400KeV.
And the inclination angle when ion injects is 7 degree, and torsion angle is in the scope of 22～45 degree, and the crystal orientation face of the silicon chip of monitoring wafer Wm is [100].Here, when on 1 annealing device, carrying out the different a plurality of heat treatment of processing temperature, a plurality of pattern functions corresponding to each processing temperature are stored in advance in the memory 46 (with reference to Fig. 1) of processing adjustment component 44.
Here, use above-mentioned monitoring wafer Wm carry out heater adjustment processing one to be illustrated in Figure 11 for reference.As shown in figure 11, carrying out pre-clean processes, the processing of Ti film forming, the processing of TiN film forming, the processing of W (tungsten) film forming, WSi 2Film forming is handled, the TaO film forming is handled, use O 3Upgrading handle, in each annealing device of handling such as film forming processing of metal film, can use monitoring wafer Wm to carry out the temperature adjustment of heater.And, in Figure 11, put down in writing the scope of the temperature range that respectively adds man-hour, pressure limit, the scope in processing time, each gas flow, for your guidance.In addition, as previously mentioned, carry out other heat treated annealing devices in addition shown in Figure 11 and also can use above-mentioned monitoring wafer Wm.
And then, can use the heat treatment of the annealing device of monitoring wafer Wm to be not limited to reduced pressure treatment (vacuum), carry out the heat treatment under the atmospheric pressure, the heat-treating apparatus every pressure condition under higher than atmospheric pressure also can use.
That represents in heat treatment system shown in Figure 1 is to use 1 annealing device, is being located at system's example of measuring film resistor on the film resistor determinator of treatment system outside by the operator, but be not limited to this, the heat treatment system that treatment system itself is provided with the film resistor determinator and is provided with a plurality of annealing devices also can use the present invention.
Figure 12 is the schematic plan view of the 2nd embodiment of the above-mentioned heat treatment system of expression, and Figure 13 is the concise and to the point pie graph of expression film resistor determinator.
As shown in figure 12, this heat treatment system is the heat treatment system of so-called set of toolsization.Specifically, being exactly this heat treatment system has a plurality of that the heat treatment of stipulating uses in vacuum environment, be 3 annealing device 4A, 4B, 4C in the illustrated example, in each annealing device 4A～4C, be provided with mounting table 32A, the 32B, the 32C that utilize heater block (not shown) heating, place silicon chip W on it simultaneously.And temperature control unit 35A, 35B, 35C that the temperature utilization of each mounting table 32A～32C connects respectively control separately.
Above-mentioned each annealing device 4A, 4B, 4C, but be connected in the common carrying room 60 of for example 6 angular shapes of vacuum exhaust by gate valve G11, G12, the G13 that can open and close respectively.And, on this common carrying room 60, connecting the film resistor measuring cell 62 of vacuum-pumping by gate valve G14, in this film resistor measuring cell 62, accommodate the film resistor determinator 64 that the film resistor of setting monitoring wafer Wm is used simultaneously.This film resistor determinator 64 for example can use, and the spy opens flat 7-No. 106388 disclosed devices of communique, concrete is as shown in figure 13, this film resistor determinator 64 is by placing the also monitor station 66 of stationary monitoring silicon chip Wm, with 4 terminals measurement, 68 composition of relative configuration with it.And this 4 terminals measurement 68 can be moved arbitrarily to in-plane and above-below direction by driving mechanism 70, and the multiple spot on above-mentioned monitoring wafer Wm is measured this film resistor.
The formation of this film resistor determinator 64 only is an example of enumerating merely, is not limited to this formation certainly.And this film resistor determinator 64 is connected in the processing conditions adjustment component 44 and the memory 46 of the same formation that illustrates with Fig. 1.And the record of warning portion 48 is omitted in Figure 12.In addition, this 1 processing conditions adjustment component 44 is connected in above-mentioned all temperature control unit 35A～35C, can adjust the controlling object parameter separately respectively independently.Therefore, in this memory 64, there are other a plurality of pattern functions in advance, as required for suitably selecting for use corresponding to the method for on each annealing device 4A～4C, carrying out different heat treatment.
In addition, in above-mentioned common carrying room 60, be provided with the vacuum transport mechanism 72 of the multi-joint arm composition of the both hands that are used for the scalable of conveyance silicon chip W and rotation.But this common carrying room 60 connects 2 pack into lock chamber 74A, 74B of vacuum exhaust respectively by gate valve G15, G16.In addition, the opposition side of these pack into lock chamber 74A, 74B is connected in the atmospheric side carrying room 76 of growing crosswise by gate valve G17, G18.Often keep atmospheric pressure in this atmospheric side carrying room 76 with nitrogen or washed air.
And, above-mentioned common carrying room 60 sides often are in the vacuum environment when heat-treating, and atmospheric side carrying room 76 between during conveyance silicon chip W, form vacuum state and atmospheric condition in above-mentioned pack into lock chamber 74A, the 74B by making repeatedly, do not destroy the vacuum of common carrying room 60 sides and carry out the conveyance of silicon chip W.
In addition, in above-mentioned atmospheric side carrying room 76, be provided with the atmospheric side transport mechanism 78 of 2 arms of and the rotation removable and scalable that conveyance silicon chip W uses at its length direction.And, be provided with the detent mechanism 80 that carries out silicon chip W location in an end of this atmospheric side carrying room 76, simultaneously the side of growing crosswise of this atmospheric side carrying room 76 be provided with can holder 10 a plurality of, be 3 loading ports 82 in the illustrated example.
In the heat treatment system that constitutes like this, the silicon chip W and the monitoring wafer Wm that are housed in the box 10 are taken into internal system by atmospheric side transport mechanism 78, and pack into lock chamber 74A or 74B by either party behind detent mechanism 80 aligned positions are taken in the common carrying room 60.And the silicon chip W carry out predetermined processing in part or all annealing device 35A～35C after returns the path opposite with above-mentioned path and is taken out of.
With respect to this, the heat treated monitoring wafer Wm that has carried out heater adjustment usefulness on arbitrary annealing device is moved in the film resistor measuring cell 62 by vacuum transport mechanism 72, keep therein utilizing under the vacuum state film resistor determinator 64 its surface illustrated in fig. 1 for example measure film resistor automatically on 49 positions, the data of its measured value are delivered to processing conditions adjustment component 44 sides.And, the monitoring wafer Wm after film resistor is measured with handled after silicon chip W same, the opposite path of path that returns when moving into is taken out of.
And the processing adjustment component 44 of data of accepting above-mentioned film resistor is carried out temperature adjustment (adjustment of controlling object parameter) previous and the same heater that illustrates with reference to Fig. 1 for the temperature control unit of this annealing device.
According to this heat treatment system, can carry out the adjustment of controlling object parameter respectively separately as required for a plurality of annealing device 4A～4C, also can carry out the temperature adjustment of each mounting table 32A～32C so produce timeliness, keep target temperature, in addition, can improve heat treated reproducibility than uniformity in the surface of the temperature of high maintenance mounting table 32A～32C.
In addition, in occasion shown in Figure 12, be that film resistor determinator 64 is connected in common carrying room 60 sides, in vacuum environment, carry out the film resistor measurement operation, but be not limited to this, shown in the 3rd embodiment of Figure 14, also can be located at film resistor determinator 64 the other end side of the atmospheric side carrying room 76 of growing crosswise, in atmospheric environment, carry out the film resistor measurement operation automatically.And concrete example only is to enumerate an example merely in above-mentioned heat treatment system, is not limited to the example that illustrates certainly here.
In addition, inclination angle and torsion angle when the ion of impurity injects are not limited to aforesaid angle, can not cause channeling effect as long as ion injects, and can be set at any value.
In addition, in the above-described embodiments, mensuration be the temperature of silicon chip, do not measure the temperature of silicon chip, by the thin-film electro resistance of last time and this thin-film electro resistance are compared, also can detect the situation that the condition in the container handling changes.Thus, when detecting timeliness, a C.T monitoring just can detect the variation that waits in the container handling with the variation of the thin-film electro resistance of semi-conductor silicon chip, if the variation of this thin-film electro resistance reaches more than the setting, also can pass through interlock alarm.
In addition, heater block is so that to be heated by resistive the situation of device be that example is illustrated here, but is applicable to place of resistive heaters too, uses the situation of heating lamp.In addition, the handled object of heat treatment object also is not limited to semi-conductor silicon chip, and the present invention also can be applicable to the annealing device that LCD substrate, glass substrate etc. are heat-treated.
The effect of invention
In sum, according to the temperature-measuring method of annealing device of the present invention, heat treatment system and annealing device, can bring into play following good action effect.
Impurity is injected and injected the temperature monitoring semi-conductor silicon chip that forms on the semi-conductor silicon chip with ionic condition, crystallization is destroyed, become amorphous state, temperature with regulation is heat-treated (annealing) to this temperature monitoring with semi-conductor silicon chip, recrystallize thus, the impurity that injects is dopant atom and for example silicon atom displacement, forms the activate state and promptly is combined into free electron or hole according to conduction shape.The quantity in this free electron or hole during according to above-mentioned heat treatment treatment temperature and decide, so the process of treatment temperature residues in the said temperature monitoring usefulness semi-conductor silicon chip.After this temperature monitoring cooled off to a certain degree with semi-conductor silicon chip, or behind the wait natural cooling, measure the film resistor of lip-deep desirable single point or multiple spot, and then, with reference to the temperature of the film resistor of the film resistor of obtaining mensuration in advance and handled object self or with the dependency relation of the temperature of the mounting table of placing handled object, can obtain the heat treatment temperature of the premises and the situation of distribution thereof.
Therefore, different with the existing temperature-measuring method of the thermocouple that uses the band lead-in wire, for container handling, temperature monitoring can automatically be moved into semi-conductor silicon chip and take out of, needn't be in the container handling that is connected in the lock chamber of packing in the system of above-mentioned container handling so for example can connect to atmosphere opening, and needn't wait for annealing device and silicon temperature cool to room temperature degree, can obtain the film resistor of temperature monitoring at short notice, temperature when understanding its heat treatment and Temperature Distribution thereof with the surface of semi-conductor silicon chip.Therefore, utilize the set parts of processing conditions or the temperature control unit that adjustment component feeds back to this result heater block, even various conditions for example produce timeliness or more the inside component parts of heat exchange treatment device heat condition is changed, temperature in the time of also always keeping the heat treatment of target, or the change of the temperature when new desirable heat treatment, so can keep the reproducibility of interior uniformity in the surface of Temperature Distribution or treatment temperature, carry out the processing of the silicon chip under the new Temperature Distribution.
In addition, do not obtain temperature, by film resistor relatively can handle assembly in to atmosphere opening, understand the unusual of heater block.

Claims (34)

1. one kind handled object stipulated heat treated annealing device, it is characterized by, comprising: but the container handling of exhaust;
Place the mounting table of handled object;
The gas supply member of supply gas in described container handling;
Heat the heater block of described handled object;
The temperature control unit that parameter is according to the rules controlled the temperature of described heater block; And
Adjust the processing conditions adjustment component of described parameter with the film resistor of semi-conductor silicon chip according to temperature monitoring.
2. annealing device as claimed in claim 1 is characterized by, and described processing conditions adjustment component has by obtaining the predetermined pattern function of dependency relation of described film resistor and mounting table temperature.
3. annealing device as claimed in claim 2 is characterized by, and described pattern function is the pattern function when forming precoated shet on the surface of described mounting table.
4. as each described annealing device of claim 1～3, it is characterized by, described temperature monitoring is set at the optimum value that inclination angle and torsion angle do not produce channeling effect with semi-conductor silicon chip, and the ion beam that carries out impurity injects.
5. annealing device as claimed in claim 1 is characterized by, and described temperature monitoring semi-conductor silicon chip is to form to the surperficial implanted dopant of described semi-conductor silicon chip with the temperature of stipulating.
6. annealing device as claimed in claim 5 is characterized by, and described semi-conductor silicon chip surface is the P type, and described impurity is phosphorus.
7. annealing device as claimed in claim 1 is characterized by, and a plurality of thermals treatment zone that are divided on the corresponding described mounting table of described heater block are divided into a plurality of, and described heater block carries out temperature control individually to described each subregion.
8. annealing device as claimed in claim 1 is characterized by, and described heat treatment is any in heat treated, plasma treatment, non-plasma processing, film forming processing, annealing in process and the etch processes.
9. one kind handled object stipulated heat treated heat treatment system, it is characterized by, comprising: the parameter that has for the heat treatment that described handled object is stipulated is according to the rules carried out a plurality of annealing devices of temperature controlled temperature control unit to being located at inner heater block;
Be connected in the common carrying room of described annealing device by gate valve to be opened/closed;
Be located at carrying mechanism in the described common carrying room for carrying described handled object;
Be connected in the film resistor measuring cell of described common carrying room by gate valve to be opened/closed;
Be located at film resistor determinator in the film resistor measuring cell for measuring temperature monitoring with the film resistor on semi-conductor silicon chip surface;
The film resistor of obtaining according to described film resistor determinator is adjusted the processing conditions adjustment component of described parameter.
10. one kind handled object stipulated heat treated heat treatment system, it is characterized by, comprising: the parameter that has for the heat treatment that described handled object is stipulated is according to the rules carried out a plurality of annealing devices of temperature controlled temperature control unit to being located at inner heater block;
Be connected in the common carrying room of described annealing device by gate valve to be opened/closed;
Be located at carrying mechanism in the described common carrying room for carrying described handled object;
For measuring the film resistor determinator that temperature monitoring is provided with the film resistor on semi-conductor silicon chip surface;
The film resistor of obtaining according to described film resistor determinator is adjusted the processing conditions adjustment component of described parameter.
11. heat treatment system as claimed in claim 9 is characterized by, and in the described annealing device, in the described common carrying room, be pumped into vacuum in the described film resistor measuring cell, makes it to become vacuum environment.
12. heat treatment system as claimed in claim 10 is characterized by, in the described annealing device, be pumped into vacuum in the described common carrying room, become vacuum environment, and described film resistor determinator is arranged under the atmospheric pressure environment.
13. as each described heat treatment system of claim 9～12, it is characterized by, described processing conditions adjustment component has the predetermined pattern function by the dependency relation of obtaining described film resistor and mounting table temperature.
14. heat treatment system as claimed in claim 13 is characterized by, described pattern function is the pattern function when forming precoated shet on the surface of described mounting table.
15. heat treatment system as claimed in claim 9 is characterized by, described temperature monitoring is set at the optimum value that inclination angle and torsion angle do not produce channeling effect with semi-conductor silicon chip, and the ion beam that carries out impurity injects.
16. heat treatment system as claimed in claim 9 is characterized by, described temperature monitoring semi-conductor silicon chip is to form with the temperature of the regulation surperficial implanted dopant to described semi-conductor silicon chip.
17. heat treatment system as claimed in claim 16 is characterized by, the semi-conductor silicon chip surface is the P type, and described impurity is phosphorus.
18. heat treatment system as claimed in claim 9, it is characterized by, described heat treatment system also comprises the mounting table that puts described handled object, the a plurality of thermals treatment zone that are divided on the corresponding described mounting table of described heater block are divided into a plurality of, and described heater block carries out temperature control individually to described each subregion.
19. heat treatment system as claimed in claim 9 is characterized by, described heat treatment is each in heat treated, plasma treatment, non-plasma processing, film forming processing, annealing in process and the etching processing.
20. one kind is utilized heater block to stipulate the temperature-controlled process of heat treated annealing device to being placed on handled object on the mounting table in the container handling, it is characterized by, comprising: the heat treatment step of in described container handling, temperature monitoring being heat-treated with semi-conductor silicon chip with the temperature of regulation;
Take out the mensuration operation that the described temperature monitoring after the heat treatment is measured with the film resistor at a plurality of positions on semi-conductor silicon chip surface with semi-conductor silicon chip, to described temperature monitoring in the described container handling; And according to the film resistor that obtains and the film resistor of obtaining in advance and the dependency relation of mounting table temperature, the parameter adjustment operation that the parameter of described temperature control unit is adjusted.
21. the temperature-controlled process of annealing device as claimed in claim 20 is characterized by, and reports unusual when described thin-film electro resistance reaches outer big or small of allowed band.
22. the temperature-controlled process as claim 20 or 21 described annealing devices is characterized by, described each operation regularly or is as required carried out aperiodically and each thin-film electro resistance of obtaining can be stored as the timeliness change procedure with showing.
23. the temperature-controlled process of annealing device as claimed in claim 20 is characterized by, in described parameter adjustment operation, by obtaining the dependency relation of described film resistor and mounting table temperature, with reference to predetermined pattern function.
24. the temperature-controlled process of annealing device as claimed in claim 23 is characterized by, described pattern function is the pattern function when forming precoated shet on the surface of described mounting table.
25. the temperature-controlled process of annealing device as claimed in claim 20 is characterized by, described temperature monitoring is set at the optimum value that inclination angle and torsion angle do not produce channeling effect with semi-conductor silicon chip, and the ion beam that carries out impurity injects.
26. the temperature-controlled process of annealing device as claimed in claim 20 is characterized by, described temperature monitoring semi-conductor silicon chip is to form to the surperficial implanted dopant of described semi-conductor silicon chip with the temperature of stipulating.
27. the temperature-controlled process of annealing device as claimed in claim 26 is characterized by, described semi-conductor silicon chip surface is the P type, and described impurity is phosphorus.
28. the temperature-controlled process of annealing device as claimed in claim 20 is characterized by, a plurality of thermals treatment zone that are divided on the corresponding described mounting table of described heater block are divided into a plurality of, and described heater block carries out temperature control individually to described each subregion.
29. the temperature-controlled process of annealing device as claimed in claim 20, it is characterized by, described heater block forms multilayer at the thickness direction of described mounting table, the a plurality of thermals treatment zone that are divided on the corresponding described mounting table of while are divided into a plurality of, and described heater block carries out temperature control individually to each subregion of described each layer.
30. the temperature-controlled process of annealing device as claimed in claim 20 is characterized by, the mensuration of described film resistor regularly or is aperiodically carried out.
31. the temperature-controlled process of annealing device as claimed in claim 20 is characterized by, described heat treatment is any in heat treated, plasma treatment, non-plasma processing, film forming processing, annealing in process and the etch processes.
32. the temperature-controlled process of an annealing device is characterized by, and comprising: the heat treatment step that temperature monitoring is heat-treated with semi-conductor silicon chip;
The mensuration operation that described temperature monitoring is measured with the film resistor of semi-conductor silicon chip;
The operation that the film resistor of the film resistor measured last time and this mensuration is compared; And
When described comparative result overshoot value is above, send the operation of warning.
33. the temperature-controlled process of annealing device as claimed in claim 32 is characterized by, the mensuration of described film resistor regularly or is aperiodically carried out.
34. the temperature-controlled process of annealing device as claimed in claim 32 is characterized by, described heat treatment is any in heat treated, plasma treatment, non-plasma processing, film forming processing, annealing in process and the etch processes.
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