CN100460970C - Half-penetrating half-reflecting display - Google Patents
Half-penetrating half-reflecting display Download PDFInfo
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- CN100460970C CN100460970C CNB2006101385399A CN200610138539A CN100460970C CN 100460970 C CN100460970 C CN 100460970C CN B2006101385399 A CNB2006101385399 A CN B2006101385399A CN 200610138539 A CN200610138539 A CN 200610138539A CN 100460970 C CN100460970 C CN 100460970C
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Abstract
The invention discloses half-penetrated half-reflected display. It includes scanning line and data line set on base plate and formed many pixel areas has many secondary pixel areas in which color secondary pixel area is at least three; the forth pixel area is at least one, many switching elements are set to respectively control them.
Description
Technical field
The present invention relates to a kind of half-penetrating half-reflecting display, relate in particular to the half-penetrating half-reflecting display that at least three color sub-pixel zones and at least one the 4th subpixel area are arranged in a kind of pixel region.
Background technology
Thin film transistor (TFT) (thin film transistor, TFT) LCD (liquidcrystal display, LCD) generally can be divided into the reflective Thin Film Transistor-LCD of ambient light as light source, and utilize penetration Thin Film Transistor-LCD and another kind of marginal semi-penetration semi-reflective (trans-reflective) Thin Film Transistor-LCD of backlight module as light source.
Generally speaking, in the penetration Thin Film Transistor-LCD, the light that backlight produced only has small part really to be used on the display panel, and remaining luminous energy is all passed through in the transport process that penetrates optical film and display panels at light and is absorbed.In addition, the penetration Thin Film Transistor-LCD in the sun or the contrast of high-brightness environment low excessively, the demonstration situation that often causes the user to know seeing panel.In order to address the above problem, LCD now adopts the design of half-penetrating half-reflecting display more.
But, raising along with LCD resolution (resolution), pixel (pixel) is done littler and littler, but, because the thin film transistor (TFT) in the pixel still can't reduced volume because of process technology limit, so thin film transistor (TFT) accounts for the ratio of pixel region and uprises relatively, this makes the aperture opening ratio (open ratio) of LCD descend relatively.Therefore how designing the half-penetrating half-reflecting display that can increase aperture opening ratio seems quite important concerning association area.
Summary of the invention
The object of the present invention is to provide a kind of half-penetrating half-reflecting display to address the above problem.
A kind of half-penetrating half-reflecting display disclosed by the invention comprises many sweep traces (scan line) that are provided with along first direction that are positioned on the substrate, be positioned on the substrate many data lines (datalinc) that are provided with along second direction, and sweep trace and data line form a plurality of pixel regions.These a plurality of pixel regions have a plurality of sub-pixels (sub-pixel) zone, have three color sub-pixel zones in these a plurality of subpixel area at least and have one the 4th subpixel area at least, and a plurality of switch module is in order to control color sub-pixel zone and the 4th subpixel area respectively.
Another disclosed half-penetrating half-reflecting display of the present invention comprises many of being positioned on the substrate along the sweep traces that first direction is provided with, and is positioned at many data lines that are provided with along second direction on the substrate, and sweep trace and data line form a plurality of pixel regions.These a plurality of pixel regions have a plurality of subpixel area, have three color sub-pixel zones in these a plurality of subpixel area at least, and correspond in the subpixel area in color sub-pixel zone and have one the 4th subpixel area at least, wherein the color sub-pixel zone is a penetration region, it has-through electrode, and a plurality of switch module is used for controlling respectively the penetration region and the 4th subpixel area in color sub-pixel zone.
Thin film transistor (TFT) colored, colourless subpixel area all will be arranged in the colourless subpixel area of reflector space because the present invention will control, and therefore the aperture opening ratio in the color sub-pixel zone of penetration region be effectively improved.
For purpose of the present invention, feature and advantage can be become apparent, below will enumerate preferred embodiment, and be elaborated in conjunction with the accompanying drawings.
Description of drawings
Figure 1 shows that the half-penetrating half-reflecting display structural representation of one embodiment of the present invention;
The structural representation of Fig. 2 change type of protrusion, slit and light sensitive spacer to the half-penetrating half-reflecting display that Figure 6 shows that Fig. 1;
Figure 7 shows that the half-penetrating half-reflecting display structural representation of another preferred embodiment of the present invention;
Figure 8 shows that the half-penetrating half-reflecting display structural representation of another preferred embodiment of the present invention;
Fig. 9 to Figure 10 is the half-penetrating half-reflecting display structural representation of another preferred embodiment of the present invention;
Figure 11 to Figure 13 is the change type synoptic diagram of the half-penetrating half-reflecting display structure of Figure 10;
Figure 14 to Figure 17 is the structural representation of light sensitive spacer of the present invention;
Figure 18 to Figure 19 is the structural representation of colored filter of the present invention;
Figure 20 shows that colourless, voltage and penetrance graph of a relation that color sub-pixel is regional of the present invention;
Shown in Figure 21 is colourless, GTG and driving voltage graph of a relation that color sub-pixel is regional of the present invention.
Wherein, Reference numeral:
100,200,300,500,600,900,1000 half-penetrating half-reflecting displays
102,202,902,1002 sweep traces
104,204,904,1004 data lines
106,206,906,1006 pixel regions
108,110,112,114,208,210,212,214,302,304,306,308,908,910,912,914,1008,1010,1012,1014 subpixel area
116,118,120,216,218,220,916,918,920,1016,1018,1020 through electrodes
122,222,922,1022 reflecting electrodes
108a, 110a, 112a, 114a, 208a, 210a, 212a, 908a, 910a, 912a, 914a, 1008a, 1010a, 1012a, 1014a thin film transistor (TFT)
108b, 110b, 112b, 114b, 908b, 910b, 912b, 914b contact hole
124,224,924,1024 common electrodes
126,226 protrusions
130,232 slits
132,310 light sensitive spacers
230 penetration region
502,602 first substrates
504,610 color filter layers
506,604 public electrodes
508,606 layer of liquid crystal molecule
510,608 pixel electrodes
512,612 dielectric layers
514 thin film transistor (TFT)s
516,614 second substrates
518,616 reflection horizon
520 reflecting electrodes
702,802 color sub-pixel
704,804 no sub-pixels
A, C reflector space
B, D penetration region
Embodiment
With reference to Fig. 1, Figure 1 shows that the structural representation of half-penetrating half-reflecting display of the present invention.Half-penetrating half-reflecting display 100 comprises: be arranged on multi-strip scanning line 102 on the substrate along first direction, be arranged on many data lines 104 on the substrate along second direction, sweep trace 102 and data line 104 form a plurality of pixel regions 106, pixel region 106 includes subpixel area 108,110,112,114, wherein subpixel area 108,110,112 comprise redness, green, blueness or other color (as: yellow, brown, different colors such as purple are arranged in pairs or groups), subpixel area 114 comprises colourless pixel region, be same as this a plurality of subpixel area 108,110, the color of one of them of 112 or be different from this a plurality of subpixel area 108,110,112 color, for example: redness, green, outside the blueness, also can utilize yellow, brown, different colors such as purple are arranged in pairs or groups.Embodiments of the invention are that red sub-pixel zone, green subpixel areas, blue subpixels zone and subpixel area 114 are example for colourless pixel region with subpixel area 108,110,112.And subpixel area 108,110,112 all is a penetration region, and it has through electrode 116,118,120 respectively, and 114 of subpixel area are reflector space, and it has reflecting electrode 122.Subpixel area 108,110,112,114 utilize thin film transistor (TFT) 108a respectively, 110a, 112a, 114a is as switch module, and thin film transistor (TFT) 108a, 110a, 112a, 114a is arranged in the below of subpixel area 114 partial reflection electrodes 122, and thin film transistor (TFT) 108a, 110a, 112a, the structure of 114a comprises bottom gate polar form (as: back of the body channel-etch type, etch-stop type or other type) or the top grid type, and thin film transistor (TFT) 108a, 110a, 112a, the dopant profile of 114a comprises the N type, P type or its combination, in addition, thin film transistor (TFT) 108a, 110a, 112a, the manufacture method of 114a comprises the amorphous silicon technology method, the polysilicon process method, the monocrystalline silicon process, microcrystal silicon process or its combination.
With subpixel area 108 is example, and the through electrode 116 in the subpixel area 108 is crossed over data line 104 to subpixel area 114, and through electrode 116 electrically connects by contact hole 108b with thin film transistor (TFT) 108a.And the through electrode 118,120 of subpixel area 110,112 is also crossed over sweep trace 102 and data line 104 respectively, is electrically connected at thin film transistor (TFT) 110a, 112a in the subpixel area 114 by contact hole 110b, 112b in the subpixel area 114 respectively.Pixel region 106 has the common electrode 124 that forms electric capacity in addition, common electrode 124 is parallel with sweep trace 102, and be arranged on sweep trace 102 between any two, common electrode 124 passed through subpixel area 108 and subpixel area 114, and was positioned at reflecting electrode 122 belows of subpixel area 114.In this embodiment, switch module, as thin film transistor (TFT) etc., be arranged in the colourless subpixel area 114 of reflector space, make the aperture opening ratio in color sub-pixel zone 108,110,112 of penetration region to be improved, and, at the switch module of colourless subpixel area 114 and the common electrode 124 of electric capacity etc., all be arranged on reflecting electrode 122 belows, so also can not waste reflector space efficient.And in this embodiment, each subpixel area all has at least one orientation Control Component (alignment control device) (not label), for example: protrusion (protrusion) 126 (also can be described as the first orientation Control Component) and slit (slit) 130 (also can be described as the second orientation Control Component, with reference to Fig. 2) both one of, to form a wide area visual angle type (Multi-domain view angle, MVA) LCD or level are switched (in-plane switch, IPS) display.
With reference to Fig. 2 to Fig. 6, Fig. 2 to Fig. 6 is the structural representation of the change type of orientation Control Component and light sensitive spacer in the half-penetrating half-reflecting display of Fig. 1.Be that the protrusion 126 of Fig. 1 is by both the variation kenel of part or all replacement of slit 130 and light sensitive spacer 132 in Fig. 2 to Fig. 6.With reference to figure 2, protrusion 126 all changes slit 130 in Fig. 2, please pay special attention at this, slit 126 shapes also can comprise X-shaped, strip, W shape, fishbone, pectination, L shaped, Hili dart shape, V-arrangement, star, radial or other shape or combinations thereof, are not limited to the shape of the slit 130 shown in Fig. 2.In Fig. 3, be to replace protrusion 126 in the colourless subpixel area 114, so not only have the function that light sensitive spacer 132 is kept the liquid crystal layer height, and light sensitive spacer 132 also can have the function of protrusion 126 with light sensitive spacer 132, can improve aperture opening ratio, and save the space.In Fig. 4, color sub-pixel zone 108,112 has protrusion 126, and color sub-pixel zone 110 then has slit 130, and colourless subpixel area 114 then has light sensitive spacer 132.In addition, in Fig. 5, then be the variation kenel of Fig. 4, have protrusion 126 and slit 130 in its color sub-pixel zone 110 simultaneously.Not only have only a subpixel area can have protrusion and slit simultaneously in the present invention, also can be more than one or whole subpixel area all have protrusion and slit simultaneously.
In Fig. 6, color sub-pixel zone 110,112 and colourless subpixel area 114 all have protrusion 126, color sub-pixel zone 108 then has slit 130, in addition, also have a light sensitive spacer 132 and be positioned between colourless subpixel area 114 and adjacent another subpixel area (not shown), and that the color of adjacent another subpixel area (not shown) comprises is colourless, be same as these a plurality of subpixel area 108,110,112 one of them color or be different from the color of these a plurality of subpixel area 108,110,112.That is to say, can all have protrusion 126 in color sub-pixel zone 108,110,112 and the colourless subpixel area 114 in the present invention, or all has a slit 130, also can be part for protrusion 126, part for slit 130, also or add light sensitive spacer 132 in colourless subpixel area 114 or be positioned between colourless subpixel area 114 and adjacent another subpixel area (not shown) and wait the variation kenel.
With reference to Fig. 7, Fig. 7 is the structural representation of half-penetrating half-reflecting display in the preferred embodiment of the present invention.Fig. 7 and Fig. 1 difference are that the 7th figure does not have protrusion.Half-penetrating half-reflecting display 900 comprises: be arranged at multi-strip scanning line 902 on the substrate along first direction, be arranged at many data lines 904 on the substrate along second direction, sweep trace 902 and data line 904 form a plurality of pixel regions 906, pixel region 906 includes subpixel area 908,910,912,914, wherein subpixel area 908,910,912 comprise redness for the color sub-pixel zone, green, blueness or other color (as: yellow, brown, different colors such as purple are arranged in pairs or groups), subpixel area 914 comprises colourless pixel region, be same as this a plurality of subpixel area 908,910, the color of one of them of 912 or be different from this a plurality of subpixel area 908,910,912 color, for example: redness, green, outside the blueness, also can utilize yellow, brown, different colors such as purple are arranged in pairs or groups.Embodiments of the invention are that red sub-pixel zone, green subpixel areas, blue subpixels zone and subpixel area 914 are example for colourless pixel region with subpixel area 908,910,912.And subpixel area 908,910,912 all is a penetration region, has through electrode 916,918,920 respectively, and 914 of subpixel area are reflector space, have reflecting electrode 922.In addition, subpixel area 908,910,912,914 utilize thin film transistor (TFT) 908a respectively, 910a, 912a, 914a is as switch module, and thin film transistor (TFT) 908a, 910a, 912a, 914a is arranged in the below of subpixel area 914 reflecting electrodes 922, and thin film transistor (TFT) 908a, 910a, 912a, the structure of 914a comprises bottom gate polar form (as: back of the body channel-etch type, etch-stop type or other type) or the top grid type, and thin film transistor (TFT) 908a, 910a, 912a, the dopant profile of 914a comprises the N type, P type or above-mentioned combination, in addition, thin film transistor (TFT) 908a, 910a, 912a, the process of 914a comprises the amorphous silicon technology method, the polysilicon process method, the monocrystalline silicon process, microcrystal silicon process or above-mentioned combination.
With subpixel area 908 is example, and the through electrode 916 in the subpixel area 908 is crossed over data line 904 to subpixel area 914, and through electrode 916 electrically connects by contact hole 908b with thin film transistor (TFT) 908a.And the through electrode 918,920 of subpixel area 910,912 is also crossed over sweep trace 902 and data line 914 respectively, is electrically connected at thin film transistor (TFT) 910a, 912a in the subpixel area 914 by contact hole 910b, 912b in the subpixel area 914 respectively.And pixel region 906 has the common electrode 924 that forms electric capacity, common electrode 924 is parallel with sweep trace 902, and be arranged on sweep trace 902 between the two, common electrode 924 passed through subpixel area 908 and subpixel area 914, and was positioned at reflecting electrode 922 belows of subpixel area 914.In this embodiment, switch module, as thin film transistor (TFT) etc., be arranged in the colourless subpixel area 914 of reflector space, make the aperture opening ratio in color sub-pixel zone 908,910,912 of penetration region can obtain to improve, and, at the switch module of colourless subpixel area 914 and the common electrode 924 of electric capacity etc., all be arranged on partial reflection electrode 922 belows, so also can not waste reflector space efficient.
With reference to Fig. 8, Fig. 8 is the half-penetrating half-reflecting display structural representation of another embodiment of the present invention.To utilize top grid (top-gate) structure of low temperature polycrystalline silicon (Low Temperature Poly Silicon) be example to thin film transistor (TFT) in the present embodiment.Half-penetrating half-reflecting display 1000 is arranged at multi-strip scanning line 1002 on the substrate along first direction, be arranged at many data lines 1004 on the substrate along second direction, sweep trace 1002 and data line 1004 form a plurality of pixel regions 1006, pixel region 1006 includes subpixel area 1008,1010,1012,1014, wherein subpixel area 1008,1010,1012 comprise redness for the color sub-pixel zone, green, blueness or other color (as: yellow, brown, different colors such as purple are arranged in pairs or groups), subpixel area 1014 comprises colourless pixel region, be same as this a plurality of subpixel area 1008,1010, the color of one of them of 1012 or be different from this a plurality of subpixel area 1008,1010,1012 color, for example: redness, green, outside the blueness, also can utilize yellow, brown, different colors such as purple are arranged in pairs or groups.Embodiments of the invention are that red sub-pixel zone, green subpixel areas, blue subpixels zone and subpixel area 1014 are example for colourless pixel region with subpixel area 1008,1010,1012.And subpixel area 1008,1010,1012 all is a penetration region, has through electrode 1016,1018,1020 respectively, and 1014 of subpixel area are reflector space, have reflecting electrode 1022.In addition, subpixel area 1008,1010,1012,1014 utilizes thin film transistor (TFT) 1008a, 1010a, 1012a, 1014a as switch module respectively, and thin film transistor (TFT) 1008a, 1010a, 1012a, 1014a are arranged in subpixel area 1008,1014.In other words, in the present embodiment, thin film transistor (TFT) 1008a, 1010a, 1012a, 1014a can partly be arranged in colourless subpixel area 1014, and another part is positioned at one of them of color sub-pixel zone 1008,1010,1012 in nearby subpixels zone 1014.And pixel region 1006 has the common electrode 1024 that forms electric capacity, and common electrode 1024 is parallel with sweep trace 1002, and is arranged on sweep trace 1002 between any two, and common electrode 1024 passed through subpixel area 1012 and subpixel area 1014.
With reference to Fig. 9 to Figure 10, Fig. 9 to Figure 10 is the half-penetrating half-reflecting display structural representation of another preferred embodiment of the present invention.Half-penetrating half-reflecting display 200 comprises: be arranged at sweep trace 202 on the substrate along first direction, be arranged at data line 204 on the substrate along second direction, sweep trace 202 and data line 204 form pixel region 206, pixel region 206 includes subpixel area 208,210,212,214, wherein subpixel area 208,210,212 comprise redness for the color sub-pixel zone, green, blueness or other color (as: yellow, brown, different colors such as purple are arranged in pairs or groups), subpixel area 214 comprises colourless pixel region, be same as this a plurality of subpixel area 208,210, the color of one of them of 212 or be different from this a plurality of subpixel area 208,210,212 color, for example: redness, green, outside the blueness, also can utilize yellow, brown, different colors such as purple are arranged in pairs or groups.Embodiments of the invention are that red sub-pixel zone, green subpixel areas, blue subpixels zone and subpixel area 214 are example for colourless pixel region with subpixel area 208,210,212.And subpixel area 208,210,212 all is a penetration region, has through electrode 216,218,220 respectively, and 214 of subpixel area are reflector space, have reflecting electrode 222.In addition, subpixel area 208,210,212 respectively by thin film transistor (TFT) 208a, 210a, 212a is as switch module, and thin film transistor (TFT) 208a, 210a, 212a is arranged in the below of subpixel area 214 partial reflection electrodes 222, and the thin film transistor (TFT) (not shown) of control subpixel area 214, also be positioned at the below of reflecting electrode 222, and thin film transistor (TFT) 208a, 210a, the structure of 212a comprises bottom gate polar form (as: back of the body channel-etch type, etch-stop type or other type) or the top grid type, and thin film transistor (TFT) 208a, 210a, the dopant profile of 212a comprises the N type, P type or above-mentioned combination, in addition, thin film transistor (TFT) 208a, 210a, the process of 212a comprises the amorphous silicon technology method, the polysilicon process method, the monocrystalline silicon process, microcrystal silicon process or above-mentioned combination.In addition, common electrode 224 is parallel with sweep trace 202, and common electrode 224 is arranged between subpixel area 208,210,212 and the colourless subpixel area 214, and is positioned at reflecting electrode 222 belows.Wherein, the position of the colourless subpixel area 214 that is not all Fig. 9 that Fig. 9 and Fig. 1 are main corresponds to color sub-pixel zone 208,210,212, and as shown in Figure 9, colourless subpixel area 214 is positioned at the below in color sub-pixel zone 208,210,212.In addition, Figure 10 then is the variation kenel of Fig. 9, has protrusion 226 in its color sub-pixel zone 208,212, then has protrusion 226 and slit 232 in the color sub-pixel zone 210 simultaneously.Not only a subpixel area can have protrusion and slit simultaneously in this preferred embodiment, also can be more than one or whole subpixel area all have protrusion and slit simultaneously.
It should be noted that except that the mode of forming pixel regions with four subpixel area of the present invention as the example, also can utilize six or eight subpixel area to form a pixel region, but and be limited to this.And the area of each subpixel area does not need all identical yet, and is can part identical, and perhaps part is different.And; in the colourless subpixel area except the mode of whole covering reflecting electrodes as reflector space; also can adopt part to have reflecting electrode in addition and have the mode of through electrode as penetration region as reflector space, remainder; this variation does not deviate from spirit of the present invention, all is the scope of protection of the invention.
With reference to Figure 11 to Figure 13, Figure 11 to Figure 13 is the change type synoptic diagram of the half-penetrating half-reflecting display structure of Figure 10.With reference to Figure 11, a penetration region 230 is arranged in reflecting electrode 222, and penetration region 230 positions are the human eye relatively poor part of color degree of saturation (as: blue, red or other color) of checking colors.And in Figure 12, a plurality of penetration region 230 are arranged in reflecting electrode 222, and lay respectively at the below of through electrode 216,218,220, in general, the area of the penetration region 230 below different color sub-pixel zones can be identical, but also can have at least penetration region 230 areas to be different from other penetration region 230.In Figure 13, penetration region 230 is positioned at reflecting electrode 222 middle positions, and bigger than 230 areas of the penetration region among Figure 11, Figure 12, and is across to adjacent data line.Please pay special attention at this, the shape of the penetration region 230 of above-mentioned figure not only can be rectangle, also can be circle, triangle, ellipse, semicircle, Hili dart shape, rhombus, trapezoidal, star, quadrilateral, perhaps shape such as other polygon.
With reference to Figure 14 to Figure 17, Figure 14 to Figure 17 is the structural representation of light sensitive spacer of the present invention.As shown in figure 14, half-penetrating half-reflecting display 300 includes a plurality of subpixel area 302,304,306,308, wherein subpixel area 302,304,306 is the color sub-pixel zone of penetration region, and subpixel area 308 then is the colourless subpixel area of reflector space.In the present invention, light sensitive spacer 310 can be positioned at subpixel area 308 as shown in Figure 5, the present invention can utilize single light sensitive spacer 310 to be arranged at the center of this subpixel area 308, perhaps light sensitive spacer 310 is arranged between the subpixel area 306 and subpixel area 308 as shown in figure 15, perhaps light sensitive spacer 310 is arranged in the subpixel area 308 as shown in figure 14 and is adjacent to the position of subpixel area 306.In addition, also can between subpixel area 308 and subpixel area that each is adjacent, light sensitive spacer 310 be set all, to increase the effect of light sensitive spacer 310.In addition, the shape of light sensitive spacer 310 can be changed to column, cylindric, trapezoidal, coniform or other shape arbitrarily, not only is confined to Figure 14, kenel illustrated in fig. 15.With reference to Figure 16, Figure 17, for the embodiment of Fig. 6 of the present invention and the top view of using light sensitive spacer 310 is arranged.In Figure 16, light sensitive spacer 310 is positioned at the center of colourless subpixel area 914.And in Figure 17,310 of a plurality of light sensitive spacers are between colourless subpixel area 914 and its adjacent sub-pixel regions.
What deserves to be mentioned is, because light sensitive spacer 310 of the present invention is positioned at colourless subpixel area 308, perhaps between Cai Se subpixel area 306 and the colourless subpixel area 308, so can not have influence on the display effect and the aperture opening ratio of colored subpixel area.Because in general technology, light sensitive spacer is positioned at arbitrary color sub-pixel zone, if light sensitive spacer is positioned at red subpixel area, when panel will show white, all must cover the transmission region that a part is equal to the light sensitive spacer size in green, the blue sub-pixel area, could make the transmittance of R:G:B reach 1:1:1, and then show white, but such mode but can make the aperture opening ratio of display descend.Yet light sensitive spacer is in colourless subpixel area or between colourless subpixel area and the color sub-pixel zone, so can not influence colored subpixel area display effect and aperture opening ratio among the present invention.
In addition, the present invention also can have different variation kenels according to the position of colored filter (color filter).With reference to Figure 18 to Figure 19, Figure 18 to Figure 19 is the embodiment of Figure 10 of the present invention and the structural representation of using colored filter is arranged.As shown in figure 18, half-penetrating half-reflecting display 500, one of them subpixel area with pixel region 206 is an example, comprise first substrate 502, color filter layers 504, public electrode (common electrode) 506, layer of liquid crystal molecule 508, pixel electrode (pixelclcctrodc) 510, dielectric layer 512, second substrate 516, wherein one of them subpixel area of pixel region 206 is divided into reflector space A, penetration region B, reflector space A includes a colourless subpixel area, and penetration region B includes a color sub-pixel zone.Reflector space A has reflecting electrode 520, and reflecting electrode 520 includes the reflection horizon 518 of metal material and transparent pixel electrode 510, and thin film transistor (TFT) 514 then is positioned at the below of reflecting electrode 520.In addition, the present invention also can be applicable in the substrate of color filter sheet integrated thin film transistor (TFT) array, is arranged at as: colored filter to be called COA (color on array) structure or thin film transistor (TFT) array on the thin film transistor (TFT) array and to be arranged at and to be called AOC (array on color) structure etc. on the colored filter.Figure 19 is the embodiment of Figure 10 of the present invention and is applied in structural representation among the COA, half-penetrating half-reflecting display 600, one of them subpixel area with pixel region 206 is an example, comprise first substrate 602, public electrode 604, layer of liquid crystal molecule 606, a plurality of pixel electrodes 608, color filter layers 610, dielectric layer 612, second substrate 614, wherein one of them subpixel area of pixel region 206 is divided into reflector space C, penetration region D, reflector space C includes a colourless subpixel area, and penetration region D includes a color sub-pixel zone.In addition, reflector space C has the part of the reflection horizon 616 of metal material as reflecting electrode, thin film transistor (TFT) 618 then is positioned at the below in reflection horizon 616, and wherein, the material of first substrate 502,602 and second substrate 516,614 comprises transparent, translucent or opaque material.
With reference to Figure 20, Figure 20 is colourless, voltage and penetrance (VT) graph of a relation that color sub-pixel is regional of the present invention.Half-penetrating half-reflecting display of the present invention colourless, color sub-pixel is regional can be driven by different voltages, and the VT curve of colourless subpixel area also is different from the VT curve in color sub-pixel zone.As shown in figure 20, color sub-pixel 702 of the present invention can reach best penetrance when voltage 4.2V, and not having sub-pixels 704 then is when voltage is 2.9V, can reach best penetrance.Refer again to Figure 21, Figure 21 is colourless, GTG and a driving voltage graph of a relation that color sub-pixel is regional of the present invention.Because the VT curve difference colourless, that color sub-pixel is regional, when GTG was big more, the driving voltage difference of color sub-pixel zone 802 and colourless subpixel area 804 just differed big more.Since of the present invention colourless, color sub-pixel is regional can drive via different voltages, so can control respectively colourless, color sub-pixel is regional to improve display effect.
If half-penetrating half-reflecting display is applied in the LCD, then the light because of penetration region only passes through layer of liquid crystal molecule once, but, the light that passes reflector space but is by twice, so will reach the optimal penetration rate of penetration region and reflector space simultaneously, just must give penetration region the driving voltage different with reflector space.Known technology utilizes penetration region and reflector space to have the liquid crystal molecule gap (dual gap) of differing heights, drive penetration region and reflector space with identical voltage, reaching preferable display effect, this practice complex process, cost is higher, yield rate is also low.Otherwise, the present invention utilizes different driven to have the penetration region and the reflector space of identical liquid crystal molecule gap (single gap) height, thereby can effectively revise reflector space and the unmatched problem of penetration region gamma curve in the known technology, make the both reach best penetrance, it is simple to present good display effect and technology, but also is not limited thereto.
In addition, it should be noted that, the design of half-penetrating half-reflecting display of the present invention is except being applied in the LCD, also can be applied in electroluminescent display and comprise organic light emitting display (OrganicLight Emitting Display, OLED), (Polymer Light EmittingDiode is PLED) in the technology such as display or inorganic light-emitting display for polymer LED.And both difference, just having or not layer of liquid crystal molecule and backlight (not shown), when being applied in electroluminescent display, the design of semi-penetration semi-reflective of the present invention does not need big change, as long as the luminescent layer (not shown) is arranged on this a plurality of pixel regions.
In addition, the light sensitive spacer and the orientation Control Component (comprising slit, protrusion or above-mentioned combination) that must it should be noted that the embodiment of the invention described above can be positioned at one of them on first substrate or second substrate.In other words, if when the orientation Control Component is protrusion, can be positioned at one of them on first substrate or second substrate, and light sensitive spacer also can be positioned on first substrate or second substrate one of them.When if the orientation Control Component comprises protrusion and slit simultaneously, this protrusion and slit lay respectively at first substrate or second substrate, and light sensitive spacer is positioned at first substrate or second substrate one of them.When if the orientation Control Component is slit, can be positioned at one of them on first substrate or second substrate, and light sensitive spacer also can be positioned on first substrate or second substrate one of them.
The present invention will control, and thin film transistor (TFT) colored, colourless subpixel area is arranged on the colourless subpixel area of reflector space, makes the aperture opening ratio in color sub-pixel zone of penetration region can obtain to improve.The present invention also can be placed on light sensitive spacer in the colourless subpixel area in addition, to improve aperture opening ratio.And penetration region of the present invention is to utilize different driven with reflector space, so the both can reach best penetrance.Therefore, the present invention can effectively improve the aperture opening ratio of display, and presents good display effect.
The preferred embodiment that the present invention describes can not be thought limitation of the invention.Obviously under the situation that does not break away from the spirit and scope of the present invention, those of ordinary skill in the art can make various improvement and variation to the present invention.Therefore, the invention is intended to cover improvement and variation within all scopes that fall into claims and equivalent thereof.
Claims (32)
1. a half-penetrating half-reflecting display is characterized in that, comprises:
The multi-strip scanning line is arranged on the substrate along a first direction;
Many data lines are arranged on this substrate along a second direction, and this multi-strip scanning line and these many data lines, form a plurality of pixel regions;
Each this pixel region has four subpixel area, and wherein three is the 4th subpixel area for color sub-pixel zone and one, and wherein, this color sub-pixel zone is a penetration region, and it has a through electrode; And
Each this pixel region, have four switch modules, three switch modules in these four switch modules, in order to control this three color sub-pixel zones respectively, an and switch module in these four switch modules, in order to controlling the 4th subpixel area, and these four switch modules, be arranged in the 4th subpixel area.
2. half-penetrating half-reflecting display according to claim 1 is characterized in that, the 4th subpixel area is a reflector space, and this reflector space has a reflecting electrode.
3. half-penetrating half-reflecting display according to claim 1 is characterized in that, the 4th subpixel area is a part of reflector space and a part of penetration region, and wherein, this reflector space has a reflecting electrode, and this penetration region has a through electrode.
4. half-penetrating half-reflecting display according to claim 1 is characterized in that, also comprises:
Many public electrodes are arranged on this substrate along this first direction, and are parallel to this multi-strip scanning line.
5. half-penetrating half-reflecting display according to claim 4, it is characterized in that, at least one public electrode in these many public electrodes is arranged in this multi-strip scanning line between any two, and through these three color sub-pixel one of them and the 4th sub-pixel.
6. half-penetrating half-reflecting display according to claim 1 is characterized in that, also comprises:
At least one light sensitive spacer is arranged in the 4th subpixel area.
7. half-penetrating half-reflecting display according to claim 6 is characterized in that, this light sensitive spacer is arranged at the center of the 4th subpixel area.
8. half-penetrating half-reflecting display according to claim 1 is characterized in that, also comprises:
At least one light sensitive spacer is arranged between one of them of the 4th subpixel area and these three color sub-pixel.
9. half-penetrating half-reflecting display according to claim 1 is characterized in that, also comprises: at least one first orientation Control Component is arranged at one of them of this three color sub-pixel zones.
10. half-penetrating half-reflecting display according to claim 9 is characterized in that, also comprises: at least one second orientation Control Component is arranged at one of them of this three color sub-pixel zones.
11. half-penetrating half-reflecting display according to claim 1 is characterized in that, also comprises: at least one second orientation Control Component is arranged at one of them of this three color sub-pixel zones.
12. half-penetrating half-reflecting display according to claim 1 is characterized in that, also comprises:
One colored filter, correspond to this substrate setting, it has a plurality of zones, respectively this zone has four sub regions, three in this four sub regions is colored subregion, correspond to these three the color sub-pixel zones on this substrate, and in this four sub regions one is that the 4th subregion corresponds to the 4th subpixel area on this substrate.
13. half-penetrating half-reflecting display according to claim 1 is characterized in that, also comprises:
One colored filter, be arranged on this substrate, it has a plurality of zones, respectively these a plurality of zones have four sub regions, three in this four sub regions is colored subregion, correspond to these three the color sub-pixel zones on this substrate, and in this four sub regions one is that the 4th subregion corresponds to the 4th subpixel area on this substrate.
14. half-penetrating half-reflecting display according to claim 1 is characterized in that, when voltage was applied to these four subpixel area, the voltage of the 4th subpixel area was different from the voltage in these three color sub-pixel zones.
15. half-penetrating half-reflecting display according to claim 1, it is characterized in that this many data lines is transmitted to the voltage of the 4th subpixel area and voltage and the penetrance relation curve that the penetrance relation curve is different from these three color sub-pixel zones.
16. half-penetrating half-reflecting display according to claim 1, it is characterized in that, respectively this through electrode in these three color sub-pixel zones is crossed over one of them of this multi-strip scanning line or one of them of these many data lines respectively, and electrically connects corresponding respectively this switch module.
17. a half-penetrating half-reflecting display is characterized in that, comprises:
The multi-strip scanning line is arranged on the substrate along a first direction;
Many data lines are arranged on this substrate along a second direction, and this multi-strip scanning line and these many data lines, form a plurality of pixel regions;
Each this pixel region, have four subpixel area, wherein three is the color sub-pixel zone, and this subpixel area that corresponds to this color sub-pixel zone is the 4th subpixel area, from the direction perpendicular to this half-penetrating half-reflecting display, the 4th subpixel area is positioned at the below in this color sub-pixel zone, wherein, this color sub-pixel zone is a penetration region, and it has a through electrode; And
Each this pixel region, have four switch modules, three switch modules in these four switch modules, in order to control this penetration region in these three color sub-pixel zones respectively, an and switch module in these four switch modules, in order to controlling the 4th subpixel area, and these four switch modules, be arranged in the 4th subpixel area.
18. half-penetrating half-reflecting display according to claim 17 is characterized in that, the 4th subpixel area is a reflector space, and this reflector space has a reflecting electrode.
19. half-penetrating half-reflecting display according to claim 17 is characterized in that, the 4th subpixel area is a part of reflector space and a part of penetration region, and wherein, this reflector space has a reflecting electrode, and this penetration region has a through electrode.
20. half-penetrating half-reflecting display according to claim 17 is characterized in that, also comprises:
Many public electrodes are arranged on this substrate along this first direction, and are parallel to this multi-strip scanning line.
21. half-penetrating half-reflecting display according to claim 20 is characterized in that, at least one public electrode in these many public electrodes is arranged in this multi-strip scanning line between any two, and through the 4th subpixel area.
22. half-penetrating half-reflecting display according to claim 17 is characterized in that, also comprises:
At least one light sensitive spacer is arranged within the 4th subpixel area.
23. half-penetrating half-reflecting display according to claim 22 is characterized in that, this light sensitive spacer is arranged at the center of the 4th subpixel area.
24. half-penetrating half-reflecting display according to claim 17 is characterized in that, also comprises:
At least one light sensitive spacer is arranged between one of them of this penetration region and the 4th subpixel area.
25. half-penetrating half-reflecting display according to claim 17 is characterized in that, also comprises: at least one first orientation Control Component is arranged at one of them of this three color sub-pixel zones.
26. half-penetrating half-reflecting display according to claim 25 is characterized in that, also comprises: at least one second orientation Control Component is arranged at one of them of this three color sub-pixel zones.
27. half-penetrating half-reflecting display according to claim 17 is characterized in that, also comprises: at least one second orientation Control Component is arranged at one of them of this three color sub-pixel zones.
28. half-penetrating half-reflecting display according to claim 17 is characterized in that, also comprises:
One colored filter, correspond to this substrate setting, it has a plurality of zones, respectively these a plurality of zones have four sub regions, in this four sub regions three is the 4th subregion for colored subregion and one, corresponds to this three color sub-pixel zones and the 4th subpixel area on this substrate respectively.
29. half-penetrating half-reflecting display according to claim 17 is characterized in that, also comprises:
One colored filter, be arranged on this substrate, it has a plurality of zones, respectively these a plurality of zones have four sub regions, in this four sub regions three is the 4th subregion for colored subregion and one, corresponds to this three color sub-pixel zones and the 4th subpixel area on this substrate respectively.
30. half-penetrating half-reflecting display according to claim 17 is characterized in that, when voltage was applied to these four subpixel area, the voltage of the 4th subpixel area was different from the voltage of the penetration region in these three color sub-pixel zones.
31. half-penetrating half-reflecting display according to claim 17, it is characterized in that these many data lines are delivered in the voltage of the 4th subpixel area and the voltage and the penetrance relation curve of this penetration region that the penetrance relation curve is different from these three color sub-pixel zones.
32. half-penetrating half-reflecting display according to claim 17, it is characterized in that, respectively this through electrode in these three color sub-pixel zones is crossed over one of them of multi-strip scanning line or one of them of many data lines respectively, and electrically connects corresponding respectively this switch module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101385399A CN100460970C (en) | 2006-11-07 | 2006-11-07 | Half-penetrating half-reflecting display |
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101385399A CN100460970C (en) | 2006-11-07 | 2006-11-07 | Half-penetrating half-reflecting display |
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| CN100460970C true CN100460970C (en) | 2009-02-11 |
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| US8455160B2 (en) * | 2010-12-09 | 2013-06-04 | Himax Technologies Limited | Color filter of liquid crystal on silicon display device |
| TWI522704B (en) * | 2014-02-26 | 2016-02-21 | 友達光電股份有限公司 | Display panel |
| CN106324923B (en) * | 2016-10-18 | 2020-02-14 | 上海中航光电子有限公司 | Array substrate and display panel |
| CN106371254A (en) * | 2016-10-28 | 2017-02-01 | 上海中航光电子有限公司 | Array substrate and display panel |
| JP6813342B2 (en) * | 2016-11-30 | 2021-01-13 | 京セラ株式会社 | Liquid crystal display device |
| CN108445681B (en) * | 2018-01-30 | 2021-05-14 | 厦门天马微电子有限公司 | Display panel and display device |
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