CN100458903C - Light-emitting diode display and its pixel driving method - Google Patents
Light-emitting diode display and its pixel driving method Download PDFInfo
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- CN100458903C CN100458903C CNB2006100803706A CN200610080370A CN100458903C CN 100458903 C CN100458903 C CN 100458903C CN B2006100803706 A CNB2006100803706 A CN B2006100803706A CN 200610080370 A CN200610080370 A CN 200610080370A CN 100458903 C CN100458903 C CN 100458903C
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Abstract
The light-emitting diode display and the driving method for its picture elements include that: discharging the memory capacitor when they pass through the drive thin film transistor and the light-emitting diode until the break-over current of the said light-emitting diode almost vanishes to register the sum of critical break-over voltage of the drive thin film transistor and the profiled voltage of the light-emitting diode, accordingly in the subsequent rutilant course of the drive light-emitting diode, by the sum of critical break-over voltage of the drive thin film transistor and the profiled voltage of the light-emitting diode, the brightness descension problem caused by the critical voltage displacement of the light-emitting diode and the absorption of the light-emitting diode can be improved.
Description
Technical field
The present invention relates to a kind of light emitting diode indicator, and be particularly related to a kind of method of driven for emitting lights diode pixel.
Background technology
The pixel of organic light emitting diode display (Organic Light Emitting Display) generally is with thin film transistor (TFT) (Thin Film Transistor, TFT) the collocation memory capacitance is come stored charge, with control Organic Light Emitting Diode (Organic Light Emitting Diode, brightness performance OLED).Please refer to Fig. 1, it is the synoptic diagram of conventional pixel circuit.Image element circuit 100 is to comprise that N type thin film transistor (TFT) 102, memory capacitance 104 are that example is done explanation with Organic Light Emitting Diode 106.The two ends cross-over connection of memory capacitance 104 is between the grid G and source S of thin film transistor (TFT) 102, and its electric capacity cross-pressure is to be denoted as Vgs.The anode of Organic Light Emitting Diode 106 couples the source S of thin film transistor (TFT) 102, and its current potential is denoted as V
OLEDSaid structure is the size of current that flows through thin film transistor (TFT) 102 by electric capacity cross-pressure Vgs control, promptly flows through the electric current I of Organic Light Emitting Diode 106
OLED=K* (Vgs-V
TH)
2And electric capacity cross-pressure Vgs is the current potential V of pixel voltage Vdata and Organic Light Emitting Diode anode tap
OLEDBetween voltage difference.So, by the different just brightness performances of may command light emitting diode 106 of pixel voltage Vdata is provided.
Yet above-mentioned thin film transistor (TFT) 102 can produce critical voltage V when practical operation
THSkew (shift).This side-play amount is relevant with processing procedure, the running time of thin film transistor (TFT) and the size of current that is flow through or the like.So to all pixels on the whole display panel, because of the difference of each thin film transistor (TFT) 102 on ON time, conducting electric current and processing procedure, can cause this a little thin film transistor (TFT)s 102 that drive usefulness, critical voltage side-play amount to each other is all inequality, and then makes the luminosity of each pixel not keep identical corresponding relation with received pixel voltage.So just, can make the uneven phenomenon of picture brightness.
In addition, Organic Light Emitting Diode 106 can produce the phenomenon that cross-pressure rises, i.e. V along with increasing service time
OLEDCurrent potential can rise.Please refer to Fig. 2, it is the performance diagram of Organic Light Emitting Diode.Can find out that from Fig. 2 Organic Light Emitting Diode 106 can produce V under long-time the use
OLEDThe phenomenon that current potential rises.Use just so, for a long time and can cause the conducting electric current I
OLEDDescend, because of Vgs=Vdata-V
OLEDThis kind phenomenon makes pixel voltage Vdata can't make Organic Light Emitting Diode 106 produce predetermined luminosity, that is to say that the whole display brightness of display frame just can descend.
In sum, even solved, still can make picture brightness because of each Organic Light Emitting Diode properties of materials and descend or the uneven phenomenon of picture brightness because of the inconsistent problem of the drive current that skew causes of critical voltage.So, how to solve the attenuation problem of problem and the material of Organic Light Emitting Diode of the critical voltage skew of thin film transistor (TFT) simultaneously, be that related industry is worth the problem thought deeply.
Summary of the invention
In view of this, purpose of the present invention is exactly at the driving method that a kind of light emitting diode indicator and pixel thereof are provided, and is to solve the problem of critical voltage skew and the material attenuation problem of light emitting diode simultaneously, so that the display frame of high image quality to be provided.
According to purpose of the present invention, a kind of driving method of pixel is proposed, this pixel has a light emitting diode, a memory capacitance and a thin film transistor (TFT).This thin film transistor (TFT) has one first end, one second end and a grid.First end is an end that electrically connects light emitting diode.The other end of light emitting diode is to receive one first voltage.This of this thin film transistor (TFT) second end is to receive one second voltage.This grid of thin film transistor (TFT) is an end that electrically connects this memory capacitance.This thin film transistor (TFT) is shinny in order to drive this light emitting diode.This driving method is described below: second voltage this end to memory capacitance is provided, and provide the other end of a pixel voltage to memory capacitance, then make first end and second end and the light-emitting diodes tube discharge of memory capacitance nationality by thin film transistor (TFT), this moment, this memory capacitance had a quantity of electric charge, afterwards, it is shinny to make thin film transistor (TFT) produce a pixel current driven for emitting lights diode according to the quantity of electric charge of memory capacitance.
The present invention also provides a kind of image element circuit of light emitting diode, comprising: a memory capacitance; One light emitting diode has a light emitting diode first end and a light emitting diode second end, and this light emitting diode second end is to be coupled to one first voltage; One the first film transistor, be shinny and have three ends in order to drive this light emitting diode, the transistorized grid of this first film is an end that electrically connects this memory capacitance, and transistorized first end of this first film is this light emitting diode first end that electrically connects this light emitting diode; One second thin film transistor (TFT), be to have three ends, the grid of this second thin film transistor (TFT) is to receive one first sweep signal, and first end of this second thin film transistor (TFT) is to receive one second voltage, and second end of this second thin film transistor (TFT) is to electrically connect transistorized second end of this first film; One the 3rd thin film transistor (TFT), be to use so that this memory capacitance can be passed through this light-emitting diodes tube discharge of this first film transistor AND gate, the 3rd thin film transistor (TFT) has three ends, the grid of the 3rd thin film transistor (TFT) is to receive one second sweep signal, and first end of the 3rd thin film transistor (TFT) and second end are to bridge at transistorized second end of this first film and gate terminal; One the 4th thin film transistor (TFT), be to have three ends, the grid of the 4th thin film transistor (TFT) is to receive this second sweep signal, and first end of the 4th thin film transistor (TFT) is the other end that electrically connects this memory capacitance, and second end of the 4th thin film transistor (TFT) is to receive a pixel voltage; And one the 5th thin film transistor (TFT), be to have three ends, the grid of the 5th thin film transistor (TFT) is to receive this first sweep signal, first end of the 5th thin film transistor (TFT) is to be electrically connected at transistorized first end of this first film, and second end of the 5th thin film transistor (TFT) is this end in addition that electrically connects this memory capacitance; Wherein, the voltage level of this first voltage is the voltage level less than this second voltage.
The present invention also provides a kind of light emitting diode indicator, comprising: one drive circuit is in order to export a pixel voltage, one first sweep signal and one second sweep signal; At least one image element circuit comprises: a light emitting diode, have a light emitting diode first end and a light emitting diode second end, and this light emitting diode second end is to be coupled to one first voltage; One memory capacitance; One the first film transistor, shinny and have three ends in order to drive this light emitting diode, this memory capacitance of electric connection of the transistorized grid of this first film is sent out an end, and transistorized first end of this first film is this light emitting diode first end that electrically connects this light emitting diode; One second thin film transistor (TFT), be to have three ends, the grid of this second thin film transistor (TFT) is to receive this first sweep signal, and first end of this second thin film transistor (TFT) is to receive one second voltage, and second end of this second thin film transistor (TFT) is to electrically connect transistorized second end of this first film; One the 3rd thin film transistor (TFT), be to use so that this memory capacitance can be passed through this light-emitting diodes tube discharge of this first film transistor AND gate, the 3rd thin film transistor (TFT) has three ends, the grid of the 3rd thin film transistor (TFT) is to receive this second sweep signal, and first end of the 3rd thin film transistor (TFT) and second end are to bridge at transistorized second end of this first film and gate terminal; One the 4th thin film transistor (TFT), be to have three ends, the grid of the 4th thin film transistor (TFT) is to receive this second sweep signal, and first end of the 4th thin film transistor (TFT) is the other end that electrically connects this memory capacitance, and second end of the 4th thin film transistor (TFT) is to receive a pixel voltage; And one the 5th thin film transistor (TFT), be to have three ends, the grid of the 5th thin film transistor (TFT) is to receive this first sweep signal, first end of the 5th thin film transistor (TFT) is to be electrically connected at transistorized first end of this first film, and second end of the 5th thin film transistor (TFT) is this other end that electrically connects this memory capacitance.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the synoptic diagram of conventional pixel circuit.
Fig. 2 is the performance diagram of Organic Light Emitting Diode.
Fig. 3 is the process flow diagram of driven for emitting lights diode pixel of the present invention.
Fig. 4 is the synoptic diagram of the light emitting diode indicator of preferred embodiment of the present invention.
Fig. 5 is the sequential chart of image element driving method of the present invention.
The reference numeral explanation
100: image element circuit
102: thin film transistor (TFT)
104: memory capacitance
106: Organic Light Emitting Diode
200: light emitting diode indicator
202: driving circuit
204: image element circuit
206: data drive circuit
208: scan drive circuit
210: light emitting diode
C: memory capacitance
T1, T2, T3, T4, T5: thin film transistor (TFT)
Embodiment
The invention provides a kind of driving method of light-emitting diode pixel, is to solve the problem of critical voltage skew of thin film transistor (TFT) and the material attenuation problem of light emitting diode simultaneously.Please refer to Fig. 3, it is for the process flow diagram of driven for emitting lights diode pixel of the present invention.At first in step 300, the replacement memory capacitance.Then, in step 302, make memory capacitance by driving usefulness thin film transistor (TFT) and light emitting diode discharge the conducting electric current of light emitting diode so far almost nil till, with the critical conduction voltage of the thin film transistor (TFT) of noting down this driving usefulness and the cross-pressure sum of the light emitting diode under the particular state, and then in the shinny process of subsequent drive light emitting diode, reach the problem of improvement because of critical voltage skew with the material decay institute brightness that the causes decline of light emitting diode of the thin film transistor (TFT) that drives usefulness by the cross-pressure sum of utilizing this critical conduction voltage and light emitting diode.In step 304, make the quantity of electric charge (be electric capacity cross-pressure) the driven for emitting lights diode of the thin film transistor (TFT) of driving usefulness afterwards according to memory capacitance.
Furthermore, please refer to Fig. 4, it is the synoptic diagram of the light emitting diode indicator of preferred embodiment of the present invention.Light emitting diode indicator 200 comprises one drive circuit 202 and a plurality of image element circuits at least.Fig. 4 is painted by example with an image element circuit 204.Image element circuit 204 comprises that a light emitting diode 210, a memory capacitance C, drive the first film transistor (Thin Film Transistor) T1 and four switches of usefulness.Four switches for example realize that with thin film transistor (TFT) promptly first switch, second switch, the 3rd switch and the 4th switch are second to the 5th thin film transistor (TFT) T2-T5 in regular turn.In the present embodiment, five thin film transistor (TFT) T1-T5 are to be that example explains with the NMOS with three ends all, so have the knack of this skill person can also PMOS or partly NMOS partly PMOS reach the present invention.
The grid G 4 of the 4th thin film transistor (TFT) T4 is to receive second to scan signal SCAN2, and the first end S4 of the 4th thin film transistor (TFT) T4 is the other end (B end) that electrically connects this memory capacitance, and the second end D4 of the 4th thin film transistor (TFT) T4 is reception pixel voltage V
DATAThe grid G 5 of the 5th thin film transistor (TFT) T5 is to receive first to scan signal SCAN1, the first end S5 of the 5th thin film transistor (TFT) T5 is the first end S1 that is electrically connected at the first film transistor T 1, and the second end D5 of the 5th thin film transistor (TFT) T5 is the B end that electrically connects memory capacitance C.
Then please refer to Fig. 5, it is the sequential chart of image element driving method of the present invention.In the process that drives pixel,, can in the process that drives, add a replacement process, phase one stage1 promptly shown in Figure 5 for (reset) the memory capacitance C that resets.At phase one stage1, first voltage level that scans the signal SCAN1 and the second sweep signal SCAN2 is to change the voltage level H that makes thin film transistor (TFT) T2-T5 conducting into, and data drive circuit 206 can provide a pixel voltage V
DATAThus, the second voltage VDD just voltage of the second and the 3rd thin film transistor (TFT) T2 by conducting, A end that T3 makes memory capacitance C is VDD, and pixel voltage V
DATAIt is V that the 4th thin film transistor (TFT) T4 by conducting makes the voltage of the B end of memory capacitance C
DATA
Then at subordinate phase stage2, the voltage level of the first sweep signal SCAN1 changes the voltage level L that thin film transistor (TFT) T2 and T5 are ended into, and voltage level H and data drive circuit 206 that the second sweep signal SCAN2 keeps on last stage also continue to provide pixel voltage V
DATASo, memory capacitance C just discharges by the formed discharge path CA of the 3rd thin film transistor (TFT) T3 (being indicated on Fig. 4) of conducting, promptly by the drawing of the first film transistor T 1-source electrode D1-S1 and 210 pairs first voltage VSS discharges of light emitting diode, till the conducting electric current of light emitting diode 210 was almost nil, this moment, the anode tap of light emitting diode 210 had a voltage level V
OLEO_0This voltage level V
OLED_0Can change along with the material attenuation characteristic of light emitting diode 210, promptly 210 running times of light emitting diode of a specified duration more, its voltage level V
OLED_0Can be high more.Return on the circuit, the voltage level of the A of memory capacitance C end can be considered as voltage level V at this moment
OLED_0Add the critical voltage V of the first film transistor T 1
TH, i.e. V
OLED_0+ V
TH, and the voltage level of B end is still kept V
DATA
Afterwards, in order to ensure the consistance of all pixel operation, for example the memory capacitance C in all pixels all is discharged to stable state, has the of short duration time by all thin film transistor (TFT) T2-T5, phase III stage3 as shown in Figure 5.Then at quadravalence section stage4 (demonstration stage), the first sweep signal SCAN1 changes voltage level H into so that thin film transistor (TFT) T2 and T5 conducting and the second sweep signal SCAN2 keeps voltage level L (thin film transistor (TFT) T3 and T4 remain off) on last stage, and the first film transistor T 1 can (be electric capacity cross-pressure V according to the quantity of electric charge of memory capacitance C this moment just thus
G1S1) the corresponding brightness of driven for emitting lights diode 210 generations.The voltage level V of the anode tap when at this moment, the voltage level of the B of memory capacitance C end can be changed into light emitting diode 210 conductings because of the conducting of the 5th thin film transistor (TFT) T5
OLED_in, and because of the continuous characteristic of electric capacity both end voltage, the voltage level of the A of memory capacitance C end also increases voltage Δ V thereupon.This voltage Δ V equals the voltage level of B end from V
DATAChange to V
OLED_inVariable quantity, i.e. Δ V=V
OLED_in-VDATA.So the voltage level of the A end of memory capacitance C finally can be changed into V
OLED_0+ V
TH+ Δ V, i.e. V
OLED_0+ V
TH+ V
OLED_in-VDATA.
The drive current I of the first film transistor T 1 is K* (V
G1S1-V
TH)
2, the voltage level of grid G 1 is the voltage level of A end, and the voltage level of source S 1 is the voltage level of B end, so drive current
I＝K*[(V
OLED_0+V
TH+V
OLED_in-V
DATA-V
OLED_in)-V
TH]
2
＝K*[(V
OLED_0-V
DATA]
2。So far can find that in showing stage stage4, the size of drive current I only and V
OLED_0With V
DATARelevant, with critical voltage V
THIrrelevant.And voltage level V when light emitting diode 210
OLED_0Because of 210 running times of light emitting diode increase when rising, can improve drive current I with the brightness reduction situation of compensation when light emitting diode 210.Can improve the problem of making picture brightness decline because of the characteristic of light LED material thus, and in the driving process, also compensated the problem of the transistorized critical voltage skew of the first film simultaneously, and then made long-time the use down of display device can keep best image quality.
The driving method of disclosed light emitting diode indicator of the above embodiment of the present invention and pixel thereof, no matter the difference of the transistorized critical voltage side-play amount of the first film of each pixel why with the difference of the attenuation degree of the light emitting diode of each pixel why, under long-time the use, still can keep best image quality.
In sum; though the present invention discloses as above with a preferred embodiment; right its is not in order to limit the present invention; anyly have the knack of this skill person; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (7)
1. the driving method of a pixel, this pixel has a light emitting diode, a memory capacitance and a thin film transistor (TFT), this thin film transistor (TFT) has one first end, one second end and a grid, this first end is an end that electrically connects this light emitting diode, the other end of this light emitting diode is to receive one first voltage, this second end is to receive one second voltage, this grid of this thin film transistor (TFT) is an end that electrically connects this memory capacitance, this thin film transistor (TFT) is shinny in order to drive this light emitting diode, and this driving method comprises:
This second voltage this end to this memory capacitance is provided, and the other end of a pixel voltage to this memory capacitance is provided;
Make this first end and this second end and this light-emitting diodes tube discharge of this memory capacitance nationality by this thin film transistor (TFT), this moment, this memory capacitance had a quantity of electric charge; And
Making this thin film transistor (TFT) produce a pixel current according to the quantity of electric charge of this memory capacitance, to drive this light emitting diode shinny,
Wherein, this pixel more comprises one first switch, a second switch and one the 3rd switch, this first switch bridges between this second end of this second voltage and this thin film transistor (TFT), this second switch bridges between this second end and this grid of this thin film transistor (TFT), the 3rd switch bridges between the other end of this pixel voltage and this memory capacitance, and this memory capacitance is more comprised by the step of this thin film transistor (TFT) and this light-emitting diodes tube discharge:
By this first switch and this second switch of conducting and the 3rd switch, so that this memory capacitance is by this thin film transistor (TFT) and this light-emitting diodes tube discharge;
And wherein, pixel more comprises one the 4th switch, and the 4th switch bridges between this grid and this first end of this thin film transistor (TFT), and this thin film transistor (TFT) drives the shinny step of this light emitting diode according to this quantity of electric charge of this memory capacitance and more comprises:
This first switch of conducting and the 4th switch and by this second switch and the 3rd switch are so that this thin film transistor (TFT) drives this light emitting diode according to this quantity of electric charge of this memory capacitance.
2. driving method as claimed in claim 1 wherein, provides this second voltage and this pixel voltage to the step of this memory capacitance more to comprise:
This first switch of conducting, this second switch and the 3rd switch are this pixel voltage so that the terminal voltage of this of this memory capacitance end is the terminal voltage of this other end of this second voltage and this memory capacitance.
3. driving method as claimed in claim 2, wherein, this driving method more comprises:
After this memory capacitance is by this thin film transistor (TFT) and this light-emitting diodes tube discharge, by this first switch, second switch and the 3rd switch.
4. the image element circuit of a light emitting diode comprises:
One memory capacitance;
One light emitting diode has a light emitting diode first end and a light emitting diode second end, and this light emitting diode second end is to be coupled to one first voltage;
One the first film transistor, be shinny and have three ends in order to drive this light emitting diode, the transistorized grid of this first film is an end that electrically connects this memory capacitance, and transistorized first end of this first film is this light emitting diode first end that electrically connects this light emitting diode;
One second thin film transistor (TFT), be to have three ends, the grid of this second thin film transistor (TFT) is to receive one first sweep signal, and first end of this second thin film transistor (TFT) is to receive one second voltage, and second end of this second thin film transistor (TFT) is to electrically connect transistorized second end of this first film;
One the 3rd thin film transistor (TFT), be to use so that this memory capacitance can be passed through this light-emitting diodes tube discharge of this first film transistor AND gate, the 3rd thin film transistor (TFT) has three ends, the grid of the 3rd thin film transistor (TFT) is to receive one second sweep signal, and first end of the 3rd thin film transistor (TFT) and second end are to bridge at transistorized second end of this first film and gate terminal respectively;
One the 4th thin film transistor (TFT), be to have three ends, the grid of the 4th thin film transistor (TFT) is to receive this second sweep signal, and first end of the 4th thin film transistor (TFT) is the other end that electrically connects this memory capacitance, and second end of the 4th thin film transistor (TFT) is to receive a pixel voltage; And
One the 5th thin film transistor (TFT), be to have three ends, the grid of the 5th thin film transistor (TFT) is to receive this first sweep signal, first end of the 5th thin film transistor (TFT) is to be electrically connected at transistorized first end of this first film, and second end of the 5th thin film transistor (TFT) is this other end that electrically connects this memory capacitance;
Wherein, the voltage level of this first voltage is the voltage level less than this second voltage.
5. image element circuit as claimed in claim 4, wherein, this pixel is used for a display, and this display more comprises:
One drive circuit, in order to export this first sweep signal, this second sweep signal and this pixel voltage are to drive this pixel, when this driving circuit drives this pixel, be earlier by this first sweep signal and this second sweep signal conducting this second, three, four, five thin film transistor (TFT)s also provide this pixel voltage, so that the terminal voltage of this of this memory capacitance end is the terminal voltage of this other end of this second voltage and this memory capacitance is this pixel voltage, then also by this first sweep signal and this second sweep signal by this second with the 5th thin film transistor (TFT) and continue conducting the 3rd and the 4th thin film transistor (TFT), so that this memory capacitance is by this light-emitting diodes tube discharge of this first film transistor AND gate, afterwards, by this first sweep signal and this second sweep signal conducting this second with the 5th thin film transistor (TFT) and by the 3rd with the 4th thin film transistor (TFT) to drive this light emitting diode shinny so that this first film transistor produces a pixel current according to the quantity of electric charge of this memory capacitance.
6. light emitting diode indicator comprises:
One drive circuit is in order to export a pixel voltage, one first sweep signal and one second sweep signal;
At least one image element circuit comprises:
One light emitting diode has a light emitting diode first end and a light emitting diode second end, and this light emitting diode second end is to be coupled to one first voltage;
One memory capacitance;
One the first film transistor, shinny and have three ends in order to drive this light emitting diode, one end of this memory capacitance of electric connection of the transistorized grid of this first film, transistorized first end of this first film are this light emitting diode first ends that electrically connects this light emitting diode;
One second thin film transistor (TFT), be to have three ends, the grid of this second thin film transistor (TFT) is to receive this first sweep signal, and first end of this second thin film transistor (TFT) is to receive one second voltage, and second end of this second thin film transistor (TFT) is to electrically connect transistorized second end of this first film;
One the 3rd thin film transistor (TFT), be to use so that this memory capacitance can be passed through this light-emitting diodes tube discharge of this first film transistor AND gate, the 3rd thin film transistor (TFT) has three ends, the grid of the 3rd thin film transistor (TFT) is to receive this second sweep signal, and first end of the 3rd thin film transistor (TFT) and second end are respectively to bridge at transistorized second end of this first film and gate terminal;
One the 4th thin film transistor (TFT), be to have three ends, the grid of the 4th thin film transistor (TFT) is to receive this second sweep signal, and first end of the 4th thin film transistor (TFT) is the other end that electrically connects this memory capacitance, and second end of the 4th thin film transistor (TFT) is to receive a pixel voltage; And
One the 5th thin film transistor (TFT), be to have three ends, the grid of the 5th thin film transistor (TFT) is to receive this first sweep signal, first end of the 5th thin film transistor (TFT) is to be electrically connected at transistorized first end of this first film, and second end of the 5th thin film transistor (TFT) is this other end that electrically connects this memory capacitance.
7. light emitting diode indicator as claimed in claim 6, wherein, when this driving circuit drives this pixel, be earlier by this first sweep signal and this second sweep signal conducting this second, three, four, five thin film transistor (TFT)s also provide this pixel voltage, so that the terminal voltage of this of this memory capacitance end is the terminal voltage of this other end of this second voltage and this memory capacitance is this pixel voltage, then also by this first sweep signal and this second sweep signal by this second with the 5th thin film transistor (TFT) and continue conducting the 3rd and the 4th thin film transistor (TFT), so that this memory capacitance is by this light-emitting diodes tube discharge of this first film transistor AND gate, afterwards, by this first sweep signal and this second sweep signal conducting this second with the 5th thin film transistor (TFT) and by the 3rd with the 4th thin film transistor (TFT) to drive this light emitting diode shinny so that this first film transistor produces a pixel current according to the quantity of electric charge of this memory capacitance.
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|---|---|---|---|
| CNB2006100803706A CN100458903C (en) | 2006-05-16 | 2006-05-16 | Light-emitting diode display and its pixel driving method |
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|---|---|---|---|
| CNB2006100803706A CN100458903C (en) | 2006-05-16 | 2006-05-16 | Light-emitting diode display and its pixel driving method |
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| CN100458903C true CN100458903C (en) | 2009-02-04 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102820001A (en) * | 2011-06-07 | 2012-12-12 | 东莞万士达液晶显示器有限公司 | Organic light emitting diode (OLED) pixel circuit |
| JP6128738B2 (en) | 2012-02-28 | 2017-05-17 | キヤノン株式会社 | Pixel circuit and driving method thereof |
| TWI449016B (en) * | 2012-06-07 | 2014-08-11 | Au Optronics Corp | Pixel driving circuit, driving method thereof and display panel |
| CN112397037B (en) * | 2019-08-16 | 2022-12-30 | 京东方科技集团股份有限公司 | Pixel driving circuit, driving method thereof and display panel |
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| US6919886B2 (en) * | 2001-03-28 | 2005-07-19 | Hitachi, Ltd. | Display module |
| CN1705001A (en) * | 2004-06-02 | 2005-12-07 | 索尼株式会社 | Pixel circuit, active matrix apparatus and display apparatus |
| CN1728219A (en) * | 2004-07-28 | 2006-02-01 | 三星Sdi株式会社 | Pixel circuit and organic light emitting display using the same |
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| US6919886B2 (en) * | 2001-03-28 | 2005-07-19 | Hitachi, Ltd. | Display module |
| CN1534578A (en) * | 2003-04-01 | 2004-10-06 | ����Sdi��ʽ���� | Luminous display device, display screen and its driving method |
| CN1705001A (en) * | 2004-06-02 | 2005-12-07 | 索尼株式会社 | Pixel circuit, active matrix apparatus and display apparatus |
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