CN100456416C - 用来统调离子注入机的方法和装置 - Google Patents

用来统调离子注入机的方法和装置 Download PDF

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Publication number
CN100456416C
CN100456416C CNB028185714A CN02818571A CN100456416C CN 100456416 C CN100456416 C CN 100456416C CN B028185714 A CNB028185714 A CN B028185714A CN 02818571 A CN02818571 A CN 02818571A CN 100456416 C CN100456416 C CN 100456416C
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CN
China
Prior art keywords
target
beam current
parameter
control
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB028185714A
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English (en)
Chinese (zh)
Other versions
CN1557012A (zh
Inventor
特伦斯·肖恩·萨利文
戴维·S·霍布鲁克
克里福德·A·拉丁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
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Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN1557012A publication Critical patent/CN1557012A/zh
Application granted granted Critical
Publication of CN100456416C publication Critical patent/CN100456416C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

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  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electron Sources, Ion Sources (AREA)
CNB028185714A 2001-08-30 2002-07-10 用来统调离子注入机的方法和装置 Expired - Fee Related CN100456416C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/943,625 2001-08-30
US09/943,625 US7282721B2 (en) 2001-08-30 2001-08-30 Method and apparatus for tuning ion implanters

Publications (2)

Publication Number Publication Date
CN1557012A CN1557012A (zh) 2004-12-22
CN100456416C true CN100456416C (zh) 2009-01-28

Family

ID=25479965

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028185714A Expired - Fee Related CN100456416C (zh) 2001-08-30 2002-07-10 用来统调离子注入机的方法和装置

Country Status (7)

Country Link
US (1) US7282721B2 (enExample)
EP (1) EP1421598A1 (enExample)
JP (1) JP2005502174A (enExample)
KR (1) KR20040029140A (enExample)
CN (1) CN100456416C (enExample)
TW (1) TW571351B (enExample)
WO (1) WO2003021630A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6960774B2 (en) * 2003-11-03 2005-11-01 Advanced Micro Devices, Inc. Fault detection and control methodologies for ion implantation processes, and system for performing same
GB2432039B (en) * 2004-01-09 2009-03-11 Applied Materials Inc Improvements relating to ion implantation
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US6992311B1 (en) * 2005-01-18 2006-01-31 Axcelis Technologies, Inc. In-situ cleaning of beam defining apertures in an ion implanter
US7397047B2 (en) * 2005-05-06 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Technique for tuning an ion implanter system
KR100755069B1 (ko) * 2006-04-28 2007-09-06 주식회사 하이닉스반도체 불균일한 이온주입에너지를 갖도록 하는 이온주입장치 및방법
GB2438893B (en) * 2006-06-09 2010-10-27 Applied Materials Inc Ion beams in an ion implanter
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US20080245957A1 (en) * 2007-04-03 2008-10-09 Atul Gupta Tuning an ion implanter for optimal performance
CN102347193B (zh) * 2010-08-02 2015-09-30 北京中科信电子装备有限公司 一种大角度离子注入机快速调束的优化算法
US9234932B2 (en) * 2013-03-13 2016-01-12 Thermo Finnigan Llc Method and apparatus for monitoring ion lens connections
US9006692B2 (en) * 2013-05-03 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for controlling ion implantation uniformity
US9870896B2 (en) * 2013-12-06 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for controlling ion implanter
US9423635B1 (en) * 2014-01-31 2016-08-23 The University Of Toledo Integrated magneto-optic modulator/compensator system, methods of making, and methods of using the same
JP6588323B2 (ja) * 2015-12-10 2019-10-09 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
JP6644596B2 (ja) 2016-03-18 2020-02-12 住友重機械イオンテクノロジー株式会社 イオン注入方法およびイオン注入装置
US10515780B1 (en) * 2018-12-19 2019-12-24 Axcelis Technologies, Inc. System and method of arc detection using dynamic threshold
CN111175569B (zh) * 2020-02-20 2021-11-05 中国科学院上海应用物理研究所 一种基于宽带串行化的极窄束流信号峰值幅度提取方法
JP7548839B2 (ja) * 2021-02-09 2024-09-10 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入方法
US12340967B2 (en) 2021-07-14 2025-06-24 Applied Materials, Inc. Methods, mediums, and systems for identifying tunable domains for ion beam shape matching
CN113571401B (zh) * 2021-07-19 2024-06-28 粤芯半导体技术股份有限公司 狭缝组件及离子注入机台

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595837A (en) * 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
CN1155152A (zh) * 1995-12-11 1997-07-23 株式会社日立制作所 带电粒子束装置及其操作方法
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
JPH10134745A (ja) * 1996-10-29 1998-05-22 Jeol Ltd 電子ビームの電流密度制御方法および装置
US5861632A (en) * 1997-08-05 1999-01-19 Advanced Micro Devices, Inc. Method for monitoring the performance of an ion implanter using reusable wafers
EP0986091A2 (en) * 1998-09-10 2000-03-15 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
WO2000038486A1 (fr) * 1998-12-21 2000-06-29 Ion Beam Applications Dispositif de variation de l'energie d'un faisceau de particules extraites d'un accelerateur

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7309997B1 (en) 2000-09-15 2007-12-18 Varian Semiconductor Equipment Associates, Inc. Monitor system and method for semiconductor processes
US6774378B1 (en) * 2003-10-08 2004-08-10 Axcelis Technologies, Inc. Method of tuning electrostatic quadrupole electrodes of an ion beam implanter

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595837A (en) * 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
CN1155152A (zh) * 1995-12-11 1997-07-23 株式会社日立制作所 带电粒子束装置及其操作方法
JPH10134745A (ja) * 1996-10-29 1998-05-22 Jeol Ltd 電子ビームの電流密度制御方法および装置
US5861632A (en) * 1997-08-05 1999-01-19 Advanced Micro Devices, Inc. Method for monitoring the performance of an ion implanter using reusable wafers
EP0986091A2 (en) * 1998-09-10 2000-03-15 Eaton Corporation Time of flight energy measurement apparatus for an ion beam implanter
WO2000038486A1 (fr) * 1998-12-21 2000-06-29 Ion Beam Applications Dispositif de variation de l'energie d'un faisceau de particules extraites d'un accelerateur

Also Published As

Publication number Publication date
EP1421598A1 (en) 2004-05-26
WO2003021630A1 (en) 2003-03-13
KR20040029140A (ko) 2004-04-03
JP2005502174A (ja) 2005-01-20
US7282721B2 (en) 2007-10-16
CN1557012A (zh) 2004-12-22
US20030042427A1 (en) 2003-03-06
TW571351B (en) 2004-01-11

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Number: 51

Volume: 20

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