CN100446209C - 利用分压调节化学氧化物去除工艺的方法和系统 - Google Patents

利用分压调节化学氧化物去除工艺的方法和系统 Download PDF

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Publication number
CN100446209C
CN100446209C CNB2005800099548A CN200580009954A CN100446209C CN 100446209 C CN100446209 C CN 100446209C CN B2005800099548 A CNB2005800099548 A CN B2005800099548A CN 200580009954 A CN200580009954 A CN 200580009954A CN 100446209 C CN100446209 C CN 100446209C
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China
Prior art keywords
reactant
substrate
amount
gas
partial pressure
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Expired - Fee Related
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CNB2005800099548A
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English (en)
Chinese (zh)
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CN1938840A (zh
Inventor
岳红宇
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN100446209C publication Critical patent/CN100446209C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Treating Waste Gases (AREA)
CNB2005800099548A 2004-03-30 2005-02-08 利用分压调节化学氧化物去除工艺的方法和系统 Expired - Fee Related CN100446209C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/812,355 US20050218113A1 (en) 2004-03-30 2004-03-30 Method and system for adjusting a chemical oxide removal process using partial pressure
US10/812,355 2004-03-30

Publications (2)

Publication Number Publication Date
CN1938840A CN1938840A (zh) 2007-03-28
CN100446209C true CN100446209C (zh) 2008-12-24

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ID=34960594

Family Applications (1)

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CNB2005800099548A Expired - Fee Related CN100446209C (zh) 2004-03-30 2005-02-08 利用分压调节化学氧化物去除工艺的方法和系统

Country Status (6)

Country Link
US (1) US20050218113A1 (enExample)
EP (1) EP1730768A2 (enExample)
JP (1) JP2007531306A (enExample)
KR (1) KR20070003797A (enExample)
CN (1) CN100446209C (enExample)
WO (1) WO2005104215A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7029536B2 (en) * 2003-03-17 2006-04-18 Tokyo Electron Limited Processing system and method for treating a substrate
US20050218114A1 (en) * 2004-03-30 2005-10-06 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
US7631898B2 (en) * 2006-01-25 2009-12-15 Chrysler Group Llc Power release and locking adjustable steering column apparatus and method
US7795148B2 (en) * 2006-03-28 2010-09-14 Tokyo Electron Limited Method for removing damaged dielectric material
US8343280B2 (en) 2006-03-28 2013-01-01 Tokyo Electron Limited Multi-zone substrate temperature control system and method of operating
US7718032B2 (en) * 2006-06-22 2010-05-18 Tokyo Electron Limited Dry non-plasma treatment system and method of using
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
US7977249B1 (en) 2007-03-07 2011-07-12 Novellus Systems, Inc. Methods for removing silicon nitride and other materials during fabrication of contacts
US8187486B1 (en) 2007-12-13 2012-05-29 Novellus Systems, Inc. Modulating etch selectivity and etch rate of silicon nitride thin films
US8323410B2 (en) * 2008-07-31 2012-12-04 Tokyo Electron Limited High throughput chemical treatment system and method of operating
US8287688B2 (en) 2008-07-31 2012-10-16 Tokyo Electron Limited Substrate support for high throughput chemical treatment system
US8303716B2 (en) 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput processing system for chemical treatment and thermal treatment and method of operating
US8303715B2 (en) * 2008-07-31 2012-11-06 Tokyo Electron Limited High throughput thermal treatment system and method of operating
US8115140B2 (en) * 2008-07-31 2012-02-14 Tokyo Electron Limited Heater assembly for high throughput chemical treatment system
US7981763B1 (en) 2008-08-15 2011-07-19 Novellus Systems, Inc. Atomic layer removal for high aspect ratio gapfill
US8058179B1 (en) 2008-12-23 2011-11-15 Novellus Systems, Inc. Atomic layer removal process with higher etch amount
US9431268B2 (en) 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
KR102636427B1 (ko) * 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
WO2019226341A1 (en) 2018-05-25 2019-11-28 Lam Research Corporation Thermal atomic layer etch with rapid temperature cycling
KR102871693B1 (ko) 2018-07-09 2025-10-15 램 리써치 코포레이션 전자 여기 원자 층 에칭
JP7739434B2 (ja) 2021-02-03 2025-09-16 ラム リサーチ コーポレーション 原子層エッチングにおけるエッチング選択性の制御

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US6071815A (en) * 1997-05-29 2000-06-06 International Business Machines Corporation Method of patterning sidewalls of a trench in integrated circuit manufacturing
CN1447387A (zh) * 2002-03-27 2003-10-08 日本电气株式会社 形成抗蚀图的方法
US20030230551A1 (en) * 2002-06-14 2003-12-18 Akira Kagoshima Etching system and etching method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282925A (en) * 1992-11-09 1994-02-01 International Business Machines Corporation Device and method for accurate etching and removal of thin film
US6774000B2 (en) * 2002-11-20 2004-08-10 International Business Machines Corporation Method of manufacture of MOSFET device with in-situ doped, raised source and drain structures
US7494560B2 (en) * 2002-11-27 2009-02-24 International Business Machines Corporation Non-plasma reaction apparatus and method
US6858532B2 (en) * 2002-12-10 2005-02-22 International Business Machines Corporation Low defect pre-emitter and pre-base oxide etch for bipolar transistors and related tooling
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US6905941B2 (en) * 2003-06-02 2005-06-14 International Business Machines Corporation Structure and method to fabricate ultra-thin Si channel devices
US6916694B2 (en) * 2003-08-28 2005-07-12 International Business Machines Corporation Strained silicon-channel MOSFET using a damascene gate process
US7116248B2 (en) * 2003-11-20 2006-10-03 Reno A & E Vehicle detector system with synchronized operation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5926690A (en) * 1997-05-28 1999-07-20 Advanced Micro Devices, Inc. Run-to-run control process for controlling critical dimensions
US6071815A (en) * 1997-05-29 2000-06-06 International Business Machines Corporation Method of patterning sidewalls of a trench in integrated circuit manufacturing
CN1447387A (zh) * 2002-03-27 2003-10-08 日本电气株式会社 形成抗蚀图的方法
US20030230551A1 (en) * 2002-06-14 2003-12-18 Akira Kagoshima Etching system and etching method

Also Published As

Publication number Publication date
WO2005104215A2 (en) 2005-11-03
WO2005104215A3 (en) 2005-12-22
KR20070003797A (ko) 2007-01-05
EP1730768A2 (en) 2006-12-13
CN1938840A (zh) 2007-03-28
US20050218113A1 (en) 2005-10-06
JP2007531306A (ja) 2007-11-01

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Granted publication date: 20081224

Termination date: 20140208