CN100445417C - Production method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom - Google Patents
Production method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom Download PDFInfo
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- CN100445417C CN100445417C CNB2006101369485A CN200610136948A CN100445417C CN 100445417 C CN100445417 C CN 100445417C CN B2006101369485 A CNB2006101369485 A CN B2006101369485A CN 200610136948 A CN200610136948 A CN 200610136948A CN 100445417 C CN100445417 C CN 100445417C
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Abstract
The invention discloses a making method of target material of cobalt-base alloy, which comprises the following steps: placing weighed raw material of Co, Ta and Zr in the copple; fusing in the vacuum; casting into ingot; proceeding heat isostatic pressing; rolling; deforming; manufacturing the ingot into needed shaped target.
Description
Technical field
The invention discloses the manufacture method of a kind of vertical magnetic recording medium soft magnetization bottom, be meant a kind of manufacture method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom especially with alloy target material.
Background technology
Hard disc of computer is a kind of magnetic recording medium commonly used.It is made up of magnetic head and disk two parts.A hard disk comprises a magnetic head and a disk at least.Disk generally is made up of four parts, i.e. basal disc (aluminum magnesium alloy or glass), bottom, magnetic recording layer and carbon protective layer.The effect of bottom is to increase magnetic head to rewrite, and it is to be splashed on the basal disc of polishing by the bottom target being carried out argon ion bombardment.So target material is very important to hard disk manufacturing.Since first hard disk drive of nineteen sixty-five invention, people always on rotating compact disc the usage level mode write down byte.In order to strengthen storage power, the technician has reduced the volume of the magnetic particle that record data use.But some hard-disc storage amounts have surpassed 500GB now, attempt volume by reducing the magnetic particle that record data use to enlarge existing hard-disc storage amount, technically near the limit.And littler magnetic particle may clash with adjacent particles, can cause the disaster of data storing like this.Along with the recording density of the longitudinal magnetic recording system that has disk unit now is approached the limit, the perpendicular magnetic recording system that has than the high record density feature receives much attention.Perpendicular magnetic recording medium is made up of multilayer films such as order coating soft magnetism lining, middle layer, magnetic recording layer in the substrate.Wherein soft magnetic underlayer is used to increase magnetic head rewriting field, helps increasing the strength of signal and the stability of disk storage.
Perpendicular recording soft magnetic underlayer material has been defined as cobalt tantalum zirconium alloy substantially through hard disk manufacturing merchant and scientific circles groping for many years.Therefore the good cobalt tantalum zirconium alloy target technology of processability becomes the gordian technique that realizes perpendicular magnetic recording.The technical requirements of hard disk industry bound pair cobalt tantalum zirconium alloy target at present is: (magnetic susceptibility is meant the ability of magnetic field penetration magneticsubstance 1, to have higher magnetic susceptibility, generally detect according to U.S. ASTM standard F1761-96), the general requirement magnetic susceptibility reaches more than 50%; 2, require sputtering target material that certain purity must be arranged.General requirement purity reaches more than 99.9%; 3, require the alloying constituent (being tantalum and zirconium) of sputtering target material evenly necessary in the distribution of target different sites, the general requirement composition fluctuates less than 1%.At present, domesticly do not see about the scientific research of the production method of cobalt tantalum zirconium alloy target and the relevant report of industrial application, after the external general employing vacuum melting strand is carried out conventional hot isostatic pressing, this processing method can guarantee the purity of cobalt tantalum zirconium alloy target, but the homogeneity for its magnetic susceptibility and alloying constituent can not guarantee, therefore, be necessary it is improved, with the suitability for industrialized production of the cobalt tantalum zirconium alloy target of realizing excellent property.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art and provide a kind of manufacturing process simple, the purity height, alloying constituent homogeneity, magnetic susceptibility all meet or exceed the manufacture method of the cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom of standard-required.
The manufacture method of a kind of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom of the present invention: comprise the steps: (1), calculate required Co, Ta, the weight of three kinds of elements of Zr by the constituent content of designed cobalt base alloy target; (2), according to required Co, Ta of (1) step, the weight of three kinds of elements of Zr, get purity all at the Co more than 99.9%, Ta, three kinds of element raw materials of Zr; (3), three kinds of element raw materials being got of (2) step are put into crucible, carry out vacuum melting and be cast into ingot casting, wherein, smelting temperature is 1400~1600 ℃, and vacuum tightness is 10 during melting
-1More than the Pa; (4), (3) step gained ingot casting is carried out hot isostatic pressing, temperature is 1000~1250 ℃, and pressure is 100~200MPa; (5), (4) step gained ingot casting is carried out at least low temperature hot rolling deformation and high temperature hot rolling deformation, the low temperature hot-rolled temperature is at 200~500 ℃, and the high temperature hot-rolled temperature is in 800~1200 ℃ of scopes; (6) (5) step gained hot rolling ingot is carried out the target that machining makes desired shape.
When making cobalt base alloy target, at first calculate the weight of required Co, Ta, three kinds of element raw materials of Zr according to the constituent content of designed cobalt base alloy target, select purity all to weigh respectively, then three kinds of element raw materials are put into crucible and carry out vacuum melting and be cast into ingot casting at the Co more than 99.9%, Ta, three kinds of element raw materials of Zr; Above-mentioned ingot casting is carried out carrying out multi-step low-temperature and high temperature hot rolling deformation again behind the hot isostatic pressing, at last the hot rolling ingot is carried out the target that machining makes desired shape.
Principle of work of the present invention and advantage are sketched in following:
1, the present invention--the preparation method of cobalt tantalum zirconium alloy target adopts conventional vacuum melting casting, hot isostatic pressing and hot rolling deformation technology, thereby technology is simple, and cost is low, the good and steady quality of material property.
2, the present invention selects the high purity raw material for use and adopts vacuum melting technology, can guarantee effectively that the cobalt tantalum zirconium alloy target composition that makes is even, and purity height, table 1 show the result of cobalt tantalum zirconium alloy target at the different sites sampling analysis.From analytical results, different sites sampling component difference is all in ± 0.5%.Table 2 shows the foreign matter content with international state-of-the-art glow discharge mass spectrometry instrument test; Cobalt tantalum zirconium alloy target purity of the present invention has reached more than 99.95%.
3, processing method of the present invention adopts and carry out multi-step low-temperature and high temperature hot rolling deformation again after ingot casting carries out hot isostatic pressing, when hanging down warm bundle, the cobalt-base alloy crystal orientation is changed, the crystal orientation that makes easy magnetization axis is perpendicular to target material surface, when the high temperature hot rolling, the tiny crack that produces when low temperature heat is pricked is eliminated, and rolling by repeatedly makes cobalt tantalum zirconium alloy target reach the effect of high magnetic susceptibility.The cobalt tantalum zirconium alloy target magnetic susceptibility that adopts the inventive method to produce has reached more than 59%, and table 3 shows the magnetic susceptibility measuring result of cobalt tantalum zirconium alloy target at different sites.In sum: processing method of the present invention is simple, cost is low, good and the steady quality of material property, cobalt tantalum zirconium alloy target purity height, uniform ingredients, the magnetic spectroscopy susceptibility height produced, be suitable for suitability for industrialized production, the production method of alternative existing cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom.
Table 1 cobalt tantalum zirconium alloy target is in the alloying constituent result of different sites sampling analysis.
Co(wt%) | Ta(wt%) | Zr(wt%) | |
Nominal composition | 79.58177 | 13.57484 | 6.84339 |
Sample number | The actual measurement composition | The actual measurement composition | The actual measurement composition |
1# | 79.60 | 13.38 | 7.02 |
2# | 79.66 | 13.38 | 6.96 |
3# | 79.48 | 13.48 | 7.04 |
4# | 79.28 | 13.68 | 7.04 |
5# | 79.15 | 13.80 | 7.05 |
The foreign matter content of the tantalum zirconium alloy target of table 2 glow discharge mass spectrometry instrument test
Analytical element | As a result, ppm | Analytical element | As a result, ppm | Analytical element | As a result, ppm |
Li | <0.02 | Br | 0.21 | Sm | <0.03 |
Be | <0.01 | Sc | <0.2 | Eu | <0.01 |
B | 0.12 | Rb | <0.007 | Gd | <0.02 |
F | ≤2.3 | Sr | 0.03 | Tb | <0.005 |
Na | 0.44 | Y | 0.02 | Dy | <0.01 |
Mg | 0.17 | Zr | 70390 | Ho | <0.007 |
Al | 20 | Nb | ≤71 | Er | <0.02 |
Si | 7.0 | Mo | 2.8 | Tm | <0.008 |
P | 0.14 | Ru | ≤0.49 | Yb | <0.04 |
S | 1.6 | Rh | 0.09 | Lu | <0.01 |
Cl | ≤3.5 | Pd | ≤2.5 | Hf | 51 |
K | 0.24 | Cd | ≤7.9 | Ta | 74450 |
Ca | <0.2 | Sn | <0.5 | W | 1.5 |
Ti | 2.6 | Sb | <0.08 | Re | <0.02 |
V | 0.05 | In | 0.20 | Os | <0.03 |
Cr | 6.4 | I | 0.01 | Ir | <0.02 |
Mn | 1.0 | Te | <0.4 | Hg | <0.2 |
Fe | 16 | Cs | <0.01 | Tl | <0.005 |
Co | 855200 | Ba | 0.03 | Pt | 0.09 |
Ni | ≤16 | La | <0.1 | Pb | <0.04 |
Cu | 14 | Ce | <0.008 | Bi | <0.04 |
Zn | 0.17 | Pr | <0.008 | Th | <0.005 |
Ga | ≤2.7 | Nd | <0.03 | U | 0.01 |
Ge | <0.4 |
Table 3 cobalt tantalum zirconium alloy target is in the magnetic susceptibility result of different sites sampling analysis.
Embodiment
Below the present invention is further illustrated with embodiment, will help preparation method of the present invention and advantage thereof are done further to understand, and protection scope of the present invention is not subjected to the qualification of these embodiment, and protection scope of the present invention is limited by claims.
Embodiment 1
The cobalt base alloy target of present embodiment, the content of Co, Ta, three kinds of elements of Zr is respectively 80%, 13.5%, 6.5%.
Its method for making is for to be respectively 80%, 13.5%, 6.5% according to Co, Ta, three kinds of constituent contents of Zr in the designed cobalt base alloy, taking by weighing purity respectively all joins at the Co more than 99.9%, Ta, Zr raw material 8Kg, 1.35Kg, 0.65Kg and carries out vacuum melting in the crucible, smelting temperature is 1400 ℃, and vacuum tightness is 5 * 10 during melting
-2Pa is cast into ingot casting after melting finishes; Above-mentioned ingot casting is carried out hot isostatic pressing, and temperature is 1000 ℃, and pressure is 100MPa; Ingot casting behind the above-mentioned hot isostatic pressing is carried out at least low temperature hot rolling deformation and a high temperature hot rolling deformation, and the low temperature hot-rolled temperature is 200 ℃, and the high temperature hot-rolled temperature is 800 ℃; At last the hot rolling ingot is carried out the target that machining makes desired shape.
Embodiment 2
The cobalt base alloy target of present embodiment, the content of Co, Ta, three kinds of elements of Zr is respectively 81%, 10%, 9%.
Its method for making is for to be respectively 81%, 10%, 9% according to Co, Ta, three kinds of constituent contents of Zr in the designed cobalt base alloy, taking by weighing purity respectively all joins at the Co more than 99.9%, Ta, Zr raw material 8.1Kg, 1Kg, 0.9Kg and carries out vacuum melting in the crucible, smelting temperature is 1500 ℃, and vacuum tightness is 5 * 10 during melting
-2Pa is cast into ingot casting after melting finishes; Above-mentioned ingot casting is carried out hot isostatic pressing, and temperature is 1150 ℃, and pressure is 150MPa; Ingot casting behind the above-mentioned hot isostatic pressing is carried out at least low temperature hot rolling deformation and a high temperature hot rolling deformation, and the low temperature hot-rolled temperature is 350 ℃, and the high temperature hot-rolled temperature is 1000 ℃; At last the hot rolling ingot is carried out the target that machining makes desired shape.
Embodiment 3
The cobalt base alloy target of present embodiment, the content of Co, Ta, three kinds of elements of Zr is respectively 89%, 6%, 5%.
Its method for making is for to be respectively 89%, 6%, 5% according to Co, Ta, three kinds of constituent contents of Zr in the designed cobalt base alloy, taking by weighing purity respectively all joins at the Co more than 99.9%, Ta, Zr raw material 8.9Kg, 0.6Kg, 0.5Kg and carries out vacuum melting in the crucible, smelting temperature is 1600 ℃, and vacuum tightness is 5 * 10 during melting
-2Pa is cast into ingot casting after melting finishes; Above-mentioned ingot casting is carried out hot isostatic pressing, and temperature is 1250 ℃, and pressure is 200MPa; Ingot casting behind the above-mentioned hot isostatic pressing is carried out at least low temperature hot rolling deformation and a high temperature hot rolling deformation, and the warm temperature of rolling is 500 ℃, and the high temperature hot-rolled temperature is 1200 ℃; At last the hot rolling ingot is carried out the target that machining makes desired shape.
Claims (7)
1, the manufacture method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom is characterized in that, this method comprises the steps,
(1), the constituent content by designed cobalt base alloy target calculates required Co, Ta, the weight of three kinds of elements of Zr;
(2), according to required Co, Ta of (1) step, the weight of three kinds of elements of Zr, get purity all at the Co more than 99.9%, Ta, three kinds of element raw materials of Zr;
(3), three kinds of element raw materials being got of (2) step are put into crucible, carry out vacuum melting and be cast into ingot casting, wherein, smelting temperature is 1400~1600 ℃, and vacuum tightness is 10 during melting
-1More than the Pa;
(4), (3) step gained ingot casting is carried out hot isostatic pressing, temperature is 1000~1250 ℃, and pressure is 100~200MPa;
(5), (4) step gained ingot casting is carried out at least low temperature hot rolling deformation and high temperature hot rolling deformation, the low temperature hot-rolled temperature is at 200~500 ℃, and the high temperature hot-rolled temperature is in 800~1200 ℃ of scopes;
(6) (5) step gained hot rolling ingot is carried out the target that machining makes desired shape.
2, the manufacture method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom according to claim 1 is characterized in that: smelting temperature is 1450~1550 ℃.
3, the manufacture method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom according to claim 1 is characterized in that: smelting temperature is 1500 ℃.
4, the manufacture method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom according to claim 1 is characterized in that: hip temperature is 1080~1200 ℃, and pressure is 130~160MPa.
5, the vertical magnetic recording medium soft magnetization bottom according to claim 1 manufacture method of cobalt-base alloy target, it is characterized in that: hip temperature is 1150 ℃, pressure is 150MPa.
6, the manufacture method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom according to claim 1 is characterized in that: the low temperature hot-rolled temperature is at 300~400 ℃, and the high temperature hot-rolled temperature is in 900~1100 ℃ of scopes.
7, the manufacture method of cobalt base alloy target for vertical magnetic recording medium soft magnetization bottom according to claim 1 is characterized in that: the low temperature hot-rolled temperature is at 350 ℃, and the high temperature hot-rolled temperature is at 1000 ℃.
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EP4079879A1 (en) * | 2021-04-20 | 2022-10-26 | Materion Advanced Materials Germany GmbH | Cozrta(x) sputtering target with improved magnetic properties |
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CN102296272B (en) * | 2011-08-17 | 2013-09-04 | 宁波江丰电子材料有限公司 | Manufacturing method of tantalum target material |
CN102517497A (en) * | 2011-12-26 | 2012-06-27 | 江阴品源新材料科技有限公司 | Alloy target material in vertical magnetic recording medium and preparation method for alloy target material |
CN102560219A (en) * | 2012-02-27 | 2012-07-11 | 湖南中精伦金属材料有限公司 | Preparation method for alloy target material FeCoTaZr for soft magnetic bottom layer of novel perpendicular magnetic recording medium |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0598433A (en) * | 1991-08-30 | 1993-04-20 | Mitsubishi Materials Corp | Manufacture of target for sputtering |
JPH05148631A (en) * | 1991-10-31 | 1993-06-15 | Mitsubishi Materials Corp | Target for sputtering |
US5468305A (en) * | 1993-10-25 | 1995-11-21 | Kabushiki Kaisha Kobe Seiko Sho | Method of lowering permeability of difficult-to-work Co alloy |
CN1234580A (en) * | 1998-05-06 | 1999-11-10 | 西南交通大学 | Method for producing target material of magnetic CD. recording medium |
JP2001115258A (en) * | 1999-08-19 | 2001-04-24 | Praxair St Technol Inc | Non-planar, ferromagnetic sputtering target with low magnetic permeability |
US6514358B1 (en) * | 2000-04-05 | 2003-02-04 | Heraeus, Inc. | Stretching of magnetic materials to increase pass-through-flux (PTF) |
-
2006
- 2006-12-27 CN CNB2006101369485A patent/CN100445417C/en not_active Expired - Fee Related
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0598433A (en) * | 1991-08-30 | 1993-04-20 | Mitsubishi Materials Corp | Manufacture of target for sputtering |
JPH05148631A (en) * | 1991-10-31 | 1993-06-15 | Mitsubishi Materials Corp | Target for sputtering |
US5468305A (en) * | 1993-10-25 | 1995-11-21 | Kabushiki Kaisha Kobe Seiko Sho | Method of lowering permeability of difficult-to-work Co alloy |
CN1234580A (en) * | 1998-05-06 | 1999-11-10 | 西南交通大学 | Method for producing target material of magnetic CD. recording medium |
JP2001115258A (en) * | 1999-08-19 | 2001-04-24 | Praxair St Technol Inc | Non-planar, ferromagnetic sputtering target with low magnetic permeability |
US6514358B1 (en) * | 2000-04-05 | 2003-02-04 | Heraeus, Inc. | Stretching of magnetic materials to increase pass-through-flux (PTF) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4079879A1 (en) * | 2021-04-20 | 2022-10-26 | Materion Advanced Materials Germany GmbH | Cozrta(x) sputtering target with improved magnetic properties |
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