JPH11246967A - Target for irmn series alloy film formation, its production and antiferromagnetic film using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a target for IrMn sereis alloy film formation excellent in discharge stability at the time of sputtering, furthermore free from the generation of target cracking even by thermal stress generated at the time of sputtering and moreover large in the exchange combination magnetic field of an antiferromagnetic film formed by sputtering. SOLUTION: Ir phases are dispersedly present in the structure of an IrMn series antiferromagnetic alloy target, and furthermore, the content of oxygen in the target is regulated to <=3000 ppm. As for the producing method, Ir powder, Mn powder and Mn-X allay powder or X powder (X denotes at least one kind among Fe, Ni, Cu, Ta, Hf, Pd, Ti, Nb, Cr, W, Zr, Mo or the like) are formulated by desired quantity, and pressure sintering is executed at a temp. lower than the liq. phase exhibiting temp. of the powdery mixture.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has an antiferromagnetism
IrMn-based alloy film formation target and its manufacturing method
The present invention relates to an antiferromagnetic film using the same, and more particularly to an antiferromagnetic film applied to a magnetic domain control of a detection unit of a magnetoresistive magnetic head applied to a magnetic recording device or the like.

[0002]

2. Description of the Related Art In the field of magnetic recording represented by a hard disk drive used in an external storage device such as a personal computer, a large capacity and a high recording density are increasing at a rate of 20 to 30% or more per year. For a magnetic head that writes / reads information to / from a magnetic disk, the method,
The composition is changing rapidly, and the change is progressing. Currently, the information density written on the magnetic disk is 2-3Gbit
/ In2, making it difficult to write / read data using the electromagnetic induction method as a magnetic head. Therefore, a magnetoresistive head using the magnetoresistive effect has been devised as a read-only head, and has become the mainstream. Came.

The detecting portion of the magnetoresistive head utilizes the magnetoresistance effect of a magnetic thin film made of a ferromagnetic material such as permalloy. However, a magnetic domain or domain wall unique to a ferromagnetic material is formed in the thin film. , Barkhausen noise was generated, which was a major obstacle in practical use.
For this reason, a practical method for forming a magnetic thin film into a single magnetic domain has been studied from various aspects, and many countermeasures have been actively conducted. Among them, a method for controlling the magnetic domain of the magnetoresistive film in a specific direction by utilizing the exchange coupling phenomenon between the magnetoresistive film and the antiferromagnetic film using a ferromagnetic thin film has been proposed as a useful solution. ing. Such a multilayer film in which two or more ferromagnetic and antiferromagnetic thin films are stacked is called an exchange coupling film. As the antiferromagnetic film laminated on the ferromagnetic film, there is an alloy system such as γ-FeMn or NiO, but the IrMn-based alloy disclosed in Patent No. 2,672,802 has an exchange coupling magnetic field strength, blocking. It is described that it is suitable in terms of temperature, corrosion resistance and the like, and has been receiving attention.

Since the IrMn-based alloy film has antiferromagnetism,
If a film is formed adjacent to the ferromagnetic alloy film, magnetic coupling occurs due to the interaction between atoms, and a peculiar phenomenon of controlling the magnetization direction of the ferromagnetic alloy film occurs. By utilizing this property phenomenon, it is expected that Barkhausen noise of the magnetoresistive effect film forming the detecting portion of the magnetoresistive head can be suppressed, and the performance of the magnetoresistive head can be remarkably improved. In fact, permalloy or Co-Fe is used as the ferromagnetic film, and γ-FeM
n or NiO is known. On the other hand, if an IrMn-based alloy film is formed by applying a magnetic field in a specific direction during film formation, after the film formation,
Attention has been paid to the fact that a high exchange coupling magnetic field can be obtained without performing heat treatment in a magnetic field, and good magnetization direction control of the ferromagnetic film can be performed. The antiferromagnetic film of the IrMn-based alloy is formed by a film forming method such as sputtering, and the target material used for the film is prepared by a vacuum melting method or a powder metallurgy method in which IrMn alloy powder of a desired composition is sintered under pressure. Is done. Next, the target material is machined to have a desired shape and size, and is incorporated as a target into a sputtering apparatus. Such a target is mainly applied to a sputtering process in an atmosphere of an inert gas ion such as Ar to form a detection portion of a magnetic head.

[0005] It is known that the above-mentioned IrMn-based alloy film-forming target is produced by a vacuum melting method or a powder metallurgy method, and its production method will be described below. First, in the vacuum melting method, Ir and Mn as raw materials and other necessary alloy components are blended into a desired composition, and the raw materials are charged into a crucible made of zirconia or alumina refractories installed in a vacuum furnace. After that, the vacuum furnace was set to 10 ^-2
After reducing the pressure to about 10 ⁻³ Torr, a high-frequency current is applied to a coil placed on the outer periphery of the refractory crucible to generate an eddy current in the raw material by electromagnetic induction, and to generate a Joule heat by the eddy current to perform heating and melting. The vacuum-melted IrMn-based alloy is poured into a mold that is also placed in a vacuum furnace, and vacuum casting is performed to produce a processed material. Further, through a mechanical or polishing processing step, it is processed into an appropriate shape and size to obtain a sputtering target.

On the other hand, in a manufacturing method to which powder metallurgy is applied,
After producing an IrMn alloy powder having a desired composition by a gas atomizing method or the like, a target material is produced by using a pressure sintering method such as a hot isostatic pressing method (HIP). The processing material thus manufactured is machined by a lathe, a grinding machine, or the like, and is used after finishing into a desired target shape.

[0007]

It is a widely used manufacturing method to produce an alloy target for sputtering using a vacuum melting method or a powder sintering method, but the IrMn-based alloy material is mechanically fragile. It is composed of an intermetallic compound phase. The target made of such a brittle material is heated during sputtering discharge and rapidly rises in temperature or locally heated, so that there is a problem that thermal stress increases due to uneven temperature distribution and the target is cracked.
If a crack occurs in the target during the sputter discharge, the plasma concentrates at the cracked portion, and as a result, a brazing material such as Ir as a metal bonding material of the sputtering target is exposed. Therefore, the formed antiferromagnetic film is contaminated, and an antiferromagnetic film having necessary characteristics cannot be obtained.

On the other hand, when an IrMn-based alloy is produced by a powder method, Mn has a high affinity for oxygen, so that the surface of the powder is oxidized during the production of the powder, forming a thick oxide film layer. When using a raw material powder in which this oxide layer is formed thickly, the sinterability deteriorates because the oxide layer intervenes in the middle during pressure sintering and hinders the mutual diffusion of atoms between the raw material powders, As a result, it was difficult to obtain a relative density of 90% or more required as a target material. The relative density of the sintered body is 90%
In the following cases, the voids inside the sintered body are continuously formed, and are connected to the outside of the sintered body, so that fine voids are generated on the surface or inside. When such a sintered body is machined, the working fluid penetrates into the sintered body,
Or it may cause a residue. Further, the contamination of the material by the working fluid is promoted, and the working fluid causes oxidation of the sintered body to progress.

When sputtering is performed using a target having a high oxygen content, an oxide, particularly an oxide of Mn, remains on the target surface and, because it is an insulator, charges are trapped and stay on the surface. For this reason, the potential distribution of the target becomes non-uniform, resulting in a non-uniform distribution that rapidly changes in some places. A uniform electric potential distribution, that is, an electric field distribution cannot be obtained near the target during sputtering, and abnormal discharge occurs during sputtering discharge, and stable discharge cannot be continued. That is, a stable plasma state cannot be obtained in the film forming apparatus. In addition, when a material having a high oxygen content is formed by sputtering, oxygen is taken in during the film formation, which hinders the antiferromagnetic film from growing epitaxially on the ferromagnetic film. When the epitaxy growth of the antiferromagnetic film is hindered, the exchange coupling magnetic field with the ferromagnetic film decreases, and it becomes difficult to control the magnetization direction, and the intended characteristics cannot be obtained. Furthermore, since the film formation composition and the target composition do not match, it is difficult to obtain the intended characteristics and it is difficult to control the characteristics.

[0010]

Having described the problems of the prior art, the means for solving the problems will now be described in detail. The essence of the present invention is Ir which is a constituent element of the target material.
And Mn form an intermetallic compound, and Mn is an element that is very easily oxidized. The present invention has been conceived in consideration of such problems of the conventional technology and the specificity of the conditions.

The present invention is characterized in that the target structure is defined as a composite structure in which an Ir phase and an IrMn alloy phase or an IrMn multi-element alloy phase are bonded to the outer peripheral side thereof. This reduces the ratio of the Mn phase and the Mn alloy phase, which is the main cause of lowering the mechanical strength of the sintered body, so that even if a crack occurs in the mechanically low strength Mn phase or the Mn alloy phase, the Ir phase is reduced. Cracking can be stopped. This can greatly improve brittleness and bending strength. At the same time, it is possible to prevent the target from cracking due to thermal stress during sputter discharge. Comparing the bending strength, which is the mechanical strength of the target of the present invention, with the mechanical strength of the perfect alloy type target by vacuum melting, which is the conventional method, the perfect alloy type target had a bending strength of 5 to 10 kg / cm ² . On the other hand, the target of the present invention is 15 kg / cm
It was found to have a bending strength of ² or more. It is the essence of the present invention that the Ir phase is present in the structure of the IrMn-based alloy target, and that the outside of the Ir phase is joined with the IrMn alloy phase, but Ir is present in the structure through the IrMn alloy. It can be said that the dispersed form more expresses the present invention. As described above, the production of the target by dividing the structure into the Ir phase and the IrMn alloy phase cannot be expected to achieve the functions and effects as in the present invention because the structure is a single phase in the conventional target. It is easy to understand from.

Although it is the ultimate object of the present invention to produce an antiferromagnetic film using the above-described target according to the present invention, its composition will be described. When forming the exchange coupling film that constitutes the detection unit of the magnetoresistive head,
Its composition can be represented by Ir _Y Mn _1-Y , 0.02 ≦ Y ≦ 0.8 at
%, The exchange coupling magnetic field can be increased. In addition, 0.05
When ≦ Y ≦ 0.4 at%, the exchange coupling force in a high temperature range can be secured, which is a more preferable range. Although there is a relationship with the ferromagnetic film forming the exchange coupling film, the antiferromagnetic film thickness is suitably 15 nm or less, and preferably 3 to 10 nm.

Next, Fe, Ni, Cu, Ta, Hf, P are added to the IrMn alloy.
d, Ti, Nb, Cr, W, Zr, Mo, Re, Co, Ru, at least one selected from the group of the Pt-containing IrMn-based multi-alloy containing at least one Ir phase in the structure, IrMn outside Ir phase
Joining with an alloy or IrMn multiple alloy phase. Ir
The addition of the above-mentioned additional element of Fe or less to the Mn alloy is intended to further improve the corrosion resistance, and is within the range in which the present invention can be implemented. However, the addition of 0.5 at% or more causes a decrease in the exchange coupling force. Therefore, the upper limit is 0.5 at%.

A third point relating to the present invention is that the above-mentioned IrMn-based alloy film-forming target has a transverse rupture strength of 15 kg / cm ² or more, and is hardly cracked even by thermal stress during sputter discharge. It is characterized by the following. Such properties demonstrate their usefulness during machining of the target material.
That is, since the conventional material was a brittle material, accurate finishing could not be performed at the time of machining, the surface condition was poor, and it was difficult to form a thin film having good characteristics. However, such problems can be solved by the present invention.

The present invention is characterized in that the oxygen content of the IrMn-based alloy film forming target is 3000 ppm or less and the relative density is 90% or more. The reason that the amount of oxygen in the target material is specified to be 3000 ppm or less is that the contained oxygen mainly exists as an oxide of Mn. Since the oxide of Mn is an insulator having no electric conductivity, charges are accumulated during sputter discharge. When the accumulated charge reaches a certain limit, the charge is rapidly discharged from the oxide, so that an abnormal discharge occurs during sputtering. When the oxygen content in the target reaches a value exceeding 3000 ppm, it is no longer possible to maintain stable sputter discharge, and it is no longer possible to precisely control the sputter film thickness. The limit of 3000 ppm was calculated from experiments and rules of thumb.

Further, when an abnormal discharge occurs, a spitting phenomenon occurs at the same time, and the molten target metal element adheres to the film surface and solidifies, so that the film has a very large amount of foreign substances. Such foreign matter on the surface of the film significantly reduces the yield of the element, and is a serious problem in the manufacture of a magnetic recording head. However, the present inventors have set the oxygen content of the IrMn-based alloy film-forming target to 3,000 ppm, more preferably 2500 ppm or less, even if it is not possible to completely suppress abnormal discharge during sputtering, even if stable sputtering discharge. It has been found that it is possible to maintain the film thickness stably and to control the film thickness stably, and at the same time, it is possible to suppress the occurrence of surface foreign matter to a practically acceptable level.

It is natural that the higher the relative density of the target is, the better it is.
% Or more is the branch point of characteristics and economy. In the method according to the present invention, voids are more likely to be generated in the target than in the vacuum melting method. For this reason, when the parameters affecting the relative density were appropriately selected and tested, if the relative density was 90% or more, the voids in the target became isolated, and the penetration of the machining fluid into the material during machining Can be suppressed, and as a result, oxidation of the target material can be suppressed, and contamination of the material by the processing liquid can be prevented.

Further, according to the present invention, an oxygen content of 3000
It includes an exchange-coupled film in which an antiferromagnetic film is formed using a low-oxygen IrMn-based alloy film-forming target controlled to be less than ppm. The present inventors compared using an IrMn alloy deposition target having an oxygen content of 3000 ppm or less and a relative density of 90% or more with an IrMn-based alloy deposition target having an oxygen content of 5000 ppm and a relative density of 85%. Was done. As a result of evaluating the characteristics of the film formation, it was found that the exchange coupling magnetic field with the ferromagnetic film was smaller in the exchange coupling film using the target having a high oxygen content than in the case using the target having a low oxygen content. Furthermore, when the formed film was subjected to micro-analysis using a transmission electron microscope, the film formed with the target having a smaller oxygen content had a good epitaxy growth on the ferromagnetic film. It was observed that the epitaxy growth was partially inhibited in the film formed with the target containing a large amount of oxygen. Oxygen contained in the IrMn-based alloy target is considered to exist in the atomic state as sputtered particles on the target side.
And form oxides. This Mn oxide prevents the IrMn-based alloy film from growing epitaxially on the ferromagnetic film, and as a result, the exchange coupling magnetic field between the ferromagnetic film and the antiferromagnetic film is reduced.

Next, the manufacturing method will be described. Good Ir
As a manufacturing method for realizing the Mn-based alloy film-forming target, there are Ir powder, Mn powder, Mn-X alloy powder or X powder, (X is Fe, Ni, Cu, Ta, Hf, Pd, Ti, Nb , Cr, W, Z
at least one selected from the group consisting of r, Mo, Re, Co, Ru, and Pt
After the desired amount of the seed is blended, pressure sintering is performed at a temperature lower than the liquid phase onset temperature of the mixed powder through a mixing step.

In the production method of the present invention, Ir powder, Mn powder, Mn-X alloy powder or X powder is blended and mixed. The greatest reason for producing the target material by subjecting this mixed powder to pressure sintering at a temperature lower than the liquid phase onset temperature is as follows. In order to combine the outside of the Ir phase with the IrMn phase, which is the basic structure of the present invention, the Ir powder must be blended alone, and the remaining elements must be blended alone or in the form of an alloy powder. is there. If a liquid phase is generated during pressure sintering by performing pressure sintering at a temperature below the liquid phase onset temperature of the raw material mixed powder, the liquid phase reacts with a mold for holding the powder or a metal can. However, it is difficult to obtain a good sintered body. Specific sintering conditions for obtaining a high-density sintered body with a relative density of 90% or more include a liquidus temperature of 10 ° C. to 200 ° C., more specifically, a temperature of 1235 ° C. Pressure sintering is desirably performed at a pressure of 100 kg / cm ² or more within the range of 1045 ° C.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail. (Example 1) Table 1 shows manufacturing conditions of the sputtering targets of the present invention and a comparative example. In Table 1, with respect to Samples 1 to 8, Ir powder and Mn powder having an average particle size of 50 μm were weighed and blended to a desired composition, mixed uniformly using a mixing mill, and then subjected to hot pressing or HIP. And pressure-sintered.

[0022]

[Table 1]

When a hot press is used as the pressure sintering method, the mixed powder is filled in a carbon mold, and then the inside of the hot press is evacuated to a temperature of 40 ° C.
After heating to 0 ° C., vacuum heating was performed for 5 hours to deaerate oxygen adsorbed on the raw material powder. After the degassing treatment, the sample 1 of the present invention was prepared by pressing the raw material powder at a pressure of 150 kg.
Pressure sintering was performed at f / cm ² and a temperature of 1230 ° C. Sample 7 of the comparative example had a pressure of 50 Kg / cm ² at the time of sintering.
Sintering was performed at a temperature of 900 ° C., and in Comparative Example 8, pressure sintering was performed at a sintering temperature of 1300 ° C. The heating temperature of Sample 8 was 1300 ° C., and the liquid phase onset temperature of the mixed powder IrMn alloy was 1
Exceeding 253 ° C., a liquid phase was developed during pressure sintering and caused a reaction with the mold.

When the HIP method is used as the pressure sintering method, the raw material powder is filled in a mild steel container, the inside of the mild steel container is evacuated, heated to 400 ° C., and left for 5 hours. The powder was degassed. After the degassing process is completed,
The container made of mild steel is sealed, and the container is placed in a HIP device, at a pressure of 1000 to 1300 Kgf / cm ² and a temperature of 1050 to 1
Pressure sintering was performed at 230 ° C.

In sample 9 of the comparative example, an ingot having the indicated composition was prepared by vacuum melting and casting, crushed into an appropriate size with a hammer, and crushed to an average particle size of 50 μm using a disk mill. Was. During the pulverization, in order to prevent the powder from being oxidized, the inside of the disk mill container was evacuated, and then the inside was replaced with Ar gas to make an inert gas atmosphere. The IrMn alloy powder obtained as described above was subjected to pressure sintering using the HIP method. Pressure sintering conditions are pressure 1300K
g / cm ² , temperature 1200 ° C. In Comparative Example 10,
IrMn alloy was prepared by vacuum casting. The material prepared as described above, while measuring the relative density, oxygen content, bending strength, sputter discharge stability, thin film composition,
In order to evaluate the magnetic properties and the state of occurrence of cracks during sputtering, a sputtering target was machined and created. The prepared target was mounted on a sputtering apparatus, and subjected to DC sputtering under the conditions of an Ar gas pressure of 5 × 10 ⁻³ Torr and a DC application power of 15 W / cm ² to obtain a thin film composition analysis sample having a film thickness of 1000 mm. The prepared thin film composition was analyzed using EPMA.

For the evaluation of the magnetic characteristics, a pure Co film was formed on a silicon substrate in the same sputtering chamber.
After the film formation, a NiMn-based antiferromagnetic alloy film was formed under the above-mentioned sputtering conditions for 200 mm, and then a Ta film was formed at a thickness of 50 mm to prevent oxidation of the IrMn alloy film. Was prepared. The prepared sample was subjected to exchange coupling measurement using a vibrating sample magnetometer. The evaluation of the discharge stability at the time of sputtering and the occurrence of cracks in the target were performed under the conditions of an Ar gas pressure of 5 × 10 ⁻³ Torr and a DC applied power of 20 to the target.
Sputter discharge was performed continuously for 5 hours under the condition of W / cm ^{2, and} the number of abnormal discharges generated during the sputter discharge was counted by an arcing monitor. At the same time, after the test, the target surface was examined for cracks.

Table 2 summarizes the evaluation results. In the present invention, each sample has a good relative density of 90% or more and an oxygen content of 25%.
Samples 7 and 9 which are comparative examples have a bending strength of not more than 00 ppm and not less than 16 kg / cm ² ,
% And the relative density is low, and the oxygen content is 4500pp
It can be seen that the number is as large as m or more. The bending strength is 6kg
/ Cm ² or less, which was very brittle.
Although the relative density and the oxygen content were good for the sample 10 prepared by the vacuum casting method, the transverse rupture strength was 9 kg / cm.
^It showed a low value of ² . Note that Sample 8 could not be evaluated because a liquid phase was generated during sintering.

[0027]

[Table 2]

With respect to the result of the exchange coupling magnetic field, when the result of Sample 2 of the present invention having a similar thin film composition and the result of Comparative Example 9 are compared,
Despite having almost the same thin film composition, 400 Oe
On the other hand, it is as low as 130 Oe, which indicates that the thin film formed with the target of the present invention has a good exchange coupling magnetic field.

With respect to the evaluation of the number of abnormal discharges and the state of occurrence of cracks after sputtering, the number of abnormal discharges of the target of the present invention is a very low value of 1 or less per minute, and the target after the test has cracks. Although no generation occurred, Sample 9 of Comparative Example having a low relative density and a high oxygen content contained 1
The number of abnormal discharges is also high at 5 times per minute.
After the passage of time, the target cracked. In Comparative Example 10, stable sputter discharge continued until the middle of the stable test, but cracks occurred in the target 2 hours after the start of continuous discharge.

(Example 2) Table 3 shows Example 2. In Example 2, a pure metal powder or an alloy powder thereof was used as a raw material powder to add a third element and a fourth element in addition to the Ir powder and the Mn powder. Hot press, HIP
Pressure sintering and machining of the target in Example 1
We go according to. In Sample 19, a liquid phase was formed during pressure sintering, and a good sintered body could not be obtained.

[0031]

[Table 3]

Table 4 shows the evaluation results of Example 2. The target of the present invention has a relative density of 90% or more for each sample, and has a transverse rupture strength, thin film composition, sputter discharge stability,
It can be seen that the sample of the comparative example has a problem in some respects, while having good characteristics in all respects such as cracking of the target. Furthermore, looking at the exchange coupling magnetic field of the sample 12 and the comparative example 24 having substantially the same thin film composition, the sample 12 of the present invention shows a value of 400 Oe, while the comparative example 24 has a value of 190 Oe, which is less than half. No value is shown, indicating that good magnetic properties can be obtained when the target of the present invention is used for forming an IrMn-based alloy antiferromagnetic film. A current supply terminal was provided on the manufactured sample to form a magnetic field detecting element. If a sufficiently large signal can be obtained with a signal of a low magnetic field and the present invention is implemented, a highly sensitive magnetic field detection sensor which has not been available in the past can be provided. It is clear from the above examination results that this can constitute a detecting section of a magnetoresistive magnetic head having a recording density of ^{2 to 3} Gbit / in ² or more.

[0033]

[Table 4]

[0034]

According to the present invention, when manufacturing an IrMn alloy or IrMnFe alloy target, by forming the structure as a composite structure, the workability is excellent, and when used as a target, the discharge stability is good and the thermal stress at the time of discharge is high. Thus, it is possible to obtain an antiferromagnetic alloy film-forming target that hardly causes cracks. Further, a magnetoresistive film having a high exchange coupling force can be manufactured, and a detection element such as a magnetic head with good sensitivity can be provided.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁶ Identification symbol FI // G11B 5/39 G11B 5/39 H01L 43/12 H01L 43/12

Claims (18)

[Claims] 1. An IrMn-based alloy film-forming target, characterized in that Ir exists in the structure, and the Ir is dispersed via an IrMn alloy. 2. The method according to claim 1, wherein the Ir and IrMn alloys have an Ir phase and an IrMn alloy phase, respectively.
An IrMn-based alloy film forming target, wherein the Ir phase is joined by an IrMn alloy phase. 3. An IrMn-based alloy film-forming target in which Ir is present in a structure and dispersed through an IrMn alloy,
Fe, Ni, Cu, Ta, Hf, Pd, Ti, Nb, Cr, W, Zr, Mo, R
e, Co, Ru, at least one selected from the group consisting of Pt
An IrMn-based alloy film forming target, which is contained in an rMn alloy or an IrMn alloy phase. 4. The method according to claim 3, wherein at least
An IrMn-based alloy film forming target, wherein at least one of Fe phase, FeMn phase and Ir phase is present. 5. The Ir according to claim 1, wherein the transverse rupture strength is 15 kg / cm 2 or more.
Mn-based alloy deposition target. 6. The IrMn according to claim 5, wherein cracks due to thermal stress or the like during sputter discharge do not occur or do not substantially affect the film forming composition.
System alloy film formation target. 7. The IrMn-based alloy film-forming target according to claim 1, wherein the oxygen content is 3000 ppm or less. 8. The method according to claim 1, wherein 90%
An IrMn-based alloy film formation target having the above relative density. 9. The method according to claim 7, wherein insulating residues mainly due to oxides such as Mn existing on the surface of the target during film formation by sputtering or the like trap space charges and do not significantly affect plasma formation. An IrMn-based alloy film formation target characterized in that it is suppressed. 10. The IrMn-based alloy film forming target according to claim 7, wherein the oxide is controlled so as to suppress the frequency of occurrence of abnormal discharge during film formation. 11. A method for producing an IrMn film-forming target, comprising a step of pressure-sintering IrMn alloy powder mixed in a desired amount at a temperature lower than a liquid phase onset temperature. 12. Ir powder, Mn powder, Mn-X alloy powder or X powder, wherein X is Fe, Ni, Cu, Ta, Hf, Pd, Ti, Nb,
At least one selected from the group consisting of Cr, W, Zr, Mo, Re, Co, Ru, and Pt), and after blending one or more of them, a step of mixing is performed to lower the liquid phase onset temperature of the mixed powder. A method for producing an IrMn film-forming target, comprising a step of performing pressure sintering at a temperature. 13. The pressure sintering temperature according to claim 11, wherein the pressure sintering temperature is 10 to 200 of a liquid phase onset temperature.
A method for manufacturing an IrMn film-forming target, characterized in that the temperature is lower by ℃. 14. An antiferromagnetic film formed by using an IrMn-based alloy film-forming target that has an Ir phase in its structure and is joined by an IrMn alloy. 15. An IrMn alloy containing Fe, Ni, Cu, Ta, Hf, Pd,
Ti, Nb, Cr, W, Zr, Mo, Re, Co, Ru, at least one selected from the group of Pt in an IrMn-based multi-component alloy contained in the IrMn alloy, an Ir phase is present in the structure, This Ir phase is
Ir joined by IrMn alloy phase or IrMn multi-component alloy phase
An antiferromagnetic film formed using a Mn-based alloy film forming target. 16. An antiferromagnetic film according to claim 14, wherein an exchange coupling force is generated by laminating with the ferromagnetic film. 17. The antiferromagnetic film according to claim 16, wherein the exchange coupling force is 10 kA / m or more. 18. An antiferromagnetic film according to claim 14, wherein a current supply terminal is provided on said antiferromagnetic film to provide a function of a magnetic field detecting element.