TWI681067B - Sputtering target, magnetic film and manufacturing method of magnetic film - Google Patents

Abstract

The sputtering target of the present invention contains 1 at.% or more of Zn in terms of atomic ratio, and a part or all of them form a composite oxide of Zn-Ti-O and/or Zn-Si-O, and the Pt is 45 at.% or less. The amount contains Co and inevitable impurities.

Description

Sputtering target, magnetic film and manufacturing method of magnetic film

The present invention mainly relates to a sputtering target, a magnetic film, and a method for manufacturing a magnetic film having a structure in which oxide particles are dispersed in a metal phase containing Co, and used to form a magnetic film such as a magnetic recording layer constituting a magnetic recording medium In particular, techniques have been proposed that can help improve the magnetic properties of magnetic films.

For example, in a hard disk device, a perpendicular magnetic recording method in which a recording surface performs magnetic recording in a vertical direction has been put into practical use, and it can achieve high-density recording compared to the conventional horizontal magnetic recording method, and thus is widely used.

The magnetic recording medium of the perpendicular magnetic recording method is generally formed by sequentially laminating a soft magnetic layer, a non-magnetic intermediate layer, a magnetic recording layer, and a protective layer on a substrate such as aluminum or glass. Among them, the magnetic recording layer is mainly composed of Co. In the Co-Cr-Pt-based alloy and the like, a magnetic film with a granular structure in which oxides such as SiO ₂ are added. Thus, in the magnetic recording layer, the above-mentioned oxide as a non-magnetic material precipitates at the grain boundaries of magnetic particles such as Co alloys oriented in the vertical direction, and the magnetic interaction between the magnetic particles is reduced, resulting in noise. The characteristics are improved and a high recording density is achieved.

The magnetic recording layer of such a magnetic recording medium is usually a sputtering target formed by dispersing predetermined oxide particles in a metal phase containing Co as a main component, and sputtering is performed on a predetermined layer by a magnetron sputtering device And formed. In addition, as related technologies of such sputtering, there are conventionally the technologies described in Patent Documents 1 to 7, and the like. Prior Art Literature Patent Literature

Patent Document 1: Japanese Patent Laid-Open No. 2011-208169; Patent Document 2: Japanese Patent Laid-Open No. 2011-174174; Patent Document 3: Japanese Patent Laid-Open No. 2011-175725; Patent Document 4: Japanese Patent Laid-Open No. 2012-117147 Gazette; Patent Literature 5: Japanese Patent No. 4885333; Patent Literature 6: International Publication No. 2012/086388; Patent Literature 7: International Publication No. 2015/064761.

Technical Problem However, in the sputtering target for forming the magnetic recording layer of the perpendicular magnetic recording method described above, metal oxides such as SiO ₂ or TiO ₂ are generally used as magnetic separation of magnetic particles oriented in the vertical direction from each other Of oxides. However, only by adding such an oxide of Si or Ti, the separation between the magnetic particles is insufficient, and it can be seen that there is a problem from the viewpoint of reducing noise caused by the recording layer.

On the other hand, if the amount of added oxide is to be increased in order to improve the separation, the magnetic particles will become smaller or the oxide will be distributed in the magnetic particles. As a result, the high coercive force cannot be maintained.

The present invention solves the aforementioned problems of the prior art, and aims to provide a sputtering target, a magnetic film, and a magnetic film that can form a magnetic film having good magnetic separation between magnetic particles and high coercivity method. Solutions to problems

The inventor found that when manufacturing a sputtering target, in addition to adding metal powders such as Co and oxide powders of Si and/or Ti, ZnO powders are added, for example, using a hot pressing method in a vacuum environment or an inert gas environment, at 700 to Powder sintering is performed in the temperature range of 1500°C, thereby forming a composite oxide of Zn-Ti-O and/or Zn-Si-O, which brings good magnetic separation and high coercivity.

It is believed that this is because the composite oxide of Zn-Ti-O or Zn-Si-O is approximately uniformly distributed around the magnetic particles, thereby reducing the strong magnetic exchange bonding between the particles without reducing the size of the magnetic particles and Magnetic anisotropy, but the invention is not limited to this theory.

Based on this knowledge, the sputtering target of the present invention is composed of an oxide containing 1 at.% or more of Zn in atomic ratio conversion, and part or all of the Zn forms Zn-Ti-O and/or Zn- The Si-O composite oxide has a Pt of 45 at.% or less, and the balance contains Co and inevitable impurities.

In the sputtering target of the present invention, preferred oxides include Zn ₂ TiO ₄ and/or Zn ₂ SiO ₄ . In addition, the sputtering target of the present invention preferably contains 1 to 15 at.% of Zn.

The sputtering target of the present invention can also be a sputtering target that forms an oxide of at least one element selected from Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti. In addition, the sputtering target of the present invention may be selected from Au, Ag, B, Cu, Cr, Ga, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh A sputtering target of at least one of Ru, Si, Sn, Ti, Ta, W, V, and Zn.

The magnetic film of the present invention contains 1 at.% or more of Zn and Ti and/or Zn and Si. Part or all of the Zn and Ti and/or Zn and Si exist in the form of oxides, and Pt is 45 at.% or less. The amount contains Co and inevitable impurities.

In the magnetic film of the present invention, it is preferable to contain Zn at 1 at.% or more and 15 at.% or less.

The magnetic film of the present invention may also be a magnetic film forming an oxide of at least one element selected from Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti. In addition, the magnetic film of the present invention may be selected from Au, Ag, B, Cu, Cr, Ga, Ge, Ir, Mn, Mo, Nb, Ni, Pd, Re, Rh, Ru, each containing 60 at.% or less , Si, Sn, Ti, Ta, W, V, and Zn.

The method of manufacturing a magnetic film of the present invention is to form a magnetic film by sputtering using any one of the above sputtering targets. Invention effect

According to the present invention, the composite oxide containing Zn-Ti-O and/or Zn-Si-O can have both good magnetic separation between magnetic particles and high coercivity. As a result, the magnetic characteristics of the magnetic film can be improved.

Hereinafter, the embodiments of the present invention will be described in detail. The sputtering target according to an embodiment of the present invention is, for example, a metal film that can constitute magnetic particles in a magnetic film such as a recording magnetic layer of a perpendicular magnetic recording method is a metal or alloy containing Pt of 45 at.% or less and the balance containing Co The sputtering target of the sintered body has a structure in which oxide particles are dispersed, and the oxide particles contain 1 at.% or more of Zn, and part or all of them are contained in the oxide phase in the form of oxide, and part or All form Zn-Ti-O and/or Zn-Si-O composite oxides. Due to the presence of such composite oxides, the composite oxides are uniformly distributed around the magnetic particles oriented in the vertical direction in the magnetic film, and serve to effectively separate the magnetic particles.

(Composition) The metal phase is mainly composed of Co, and contains Pt as necessary. More specifically, the metal phase is a metal composed only of Co, or an alloy containing Pt and the balance composed of Co. When Pt is contained, the content of Pt can be set to 0.1 at.% or more and 45 at.% or less. In addition, it sometimes contains impurities inevitably mixed (so-called inevitable impurities).

In addition, the metal phase may contain, for example, 60 at.% or less, typically 0.5 to 60 at.%, selected from Au, Ag, B, Cu, Cr, Ga, Ge, Ir, Mn, Mo, Nb , Ni, Pd, Re, Rh, Ru, Si, Sn, Ti, Ta, W, V, and Zn. By including such elements, it is expected that the magnetic properties of the magnetic film will be further improved. In addition, although these elements are mainly contained in the metal phase, they are oxidized during the sintering at the time of manufacture described later, so some of them may still exist in the form of oxides.

The metal phase described above constitutes a magnetic phase, but the sputtering target for forming a magnetic film such as a magnetic recording layer of a perpendicular magnetic recording system includes an oxide phase as a non-magnetic phase. Here, in the present invention, an oxide containing Zn is contained as the oxide contained in the oxide phase, and at least a part of the oxide containing Zn forms a composite of Zn-Ti-O and/or Zn-Si-O Oxide. Such oxides form grain boundaries of the oxide phase in the magnetic film to surround the magnetic particles. As a result, the magnetic interaction between the magnetic particles is reduced, resulting in improved noise characteristics. In particular, since there is a composite oxide of Zn-Ti-O or Zn-Si-O, good magnetic separation between magnetic particles can be achieved.

Containing 1 at.% or more of Zn, part or all of which is contained in the oxide. That is, when Zn is less than 1 at.%, Zn-Ti-O and/or Zn-Si-O cannot be formed in an amount sufficient to separate magnetic particles. On the other hand, if the amount of Zn is too large, Zn may be localized in the magnetic particles. Therefore, the content of Zn is preferably 20 at.% or less. In particular, the content of Zn is more preferably 1 at.% or more and 15 at.% or less. In addition, it is preferable to contain Zn at 1 to 15 at.%.

Regarding the composite oxide of Zn-Ti-O and/or Zn-Si-O, specifically, Zn-Ti-O is Zn ₂ TiO ₄ and Zn-Si-O is Zn ₂ SiO ₄ . When at least one of Zn ₂ TiO ₄ and Zn ₂ SiO ₄ is present, a magnetic film having excellent magnetic characteristics can be formed. The reason is considered to be that the melting point is lower than that of TiO ₂ or SiO ₂ , and therefore oxides are easily rearranged on the substrate during sputtering. The presence or absence of Zn ₂ TiO ₄ or Zn ₂ SiO ₄ can be confirmed by observing the peak of the diffraction intensity of X-ray diffraction (XRD).

In addition, an oxide of at least one element selected from Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti may also be included. In general, the magnetic recording layer of the perpendicular magnetic recording method contains the oxide of Co, the oxide of Cr, the oxide of Si, the oxide of B, and W in addition to the oxide of Zn and the composite oxide described above Oxides, Nb oxides, Mn oxides, Mo oxides and Ti oxides. At least one of these oxides such as Si will also form the grain boundaries of the oxide phase to surround the magnetic particles, so that The separation between magnetic particles becomes better. When oxides of Cr, Si, B, W, Nb, Mn, Mo, and Ti exist in the atomic ratio of 0 to 40 at.% relative to the entire sputtering target, the crystal orientation and magnetic properties of the metal Co can be stably maintained. In particular, when it is set to 0.5 at.% to 20 at.%, DC sputtering can be stably performed.

(Magnetic film) Using the sputtering target as described above, a film is formed on the substrate by a magnetron sputtering device or the like, so that a predetermined magnetic film can be formed. Such a magnetic film contains Zn and Ti and/or Zn and Si, Pt is 45 at.% or less, and the remainder contains Co and inevitable impurities. Among them, some or all of Zn, Ti, and Si exist in the form of oxides. That is, the magnetic film contains at least one oxide of Zn, Ti, and O, and Zn, Si, and O. The Zn content in the magnetic film is 1 at.% or more, preferably 1 at.% or more and 15 at.% or less.

In addition, as to whether the above-mentioned Zn, Ti, and Si are included in the magnetic film in the form of a composite oxide, it is distributed in the gap (grain boundary) between magnetic particles with a width of about 1 nm in a film of only about 10 nm. Structural analysis using ordinary X-rays makes it difficult to confirm which way to compound.

Furthermore, the magnetic film may further contain an oxide of at least one element selected from Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti. In addition, the magnetic film sometimes contains 60 at.% or less, typically 0.5 to 60 at.%, selected from Au, Ag, Cr, Cu, Ga, Ge, Ir, Mn, Mo, Nb, Ni , Pd, Re, Rh, Ru, Sn, Ta, W, V, and Zn.

(Manufacturing method of sputtering target) The sputtering target mentioned above can be manufactured by the powder sintering method, and the specific example is as follows.

Initially, as the metal powder, at least Co powder, and Pt powder and/or Cr powder are prepared as necessary, and metal powders such as Au powder, Ag powder, B powder, Cu powder, etc. are prepared according to circumstances. The metal powder is not only a single element powder but also an alloy powder. In terms of being capable of being uniformly mixed to prevent segregation and coarse crystallization, a powder having a particle size in the range of 1 μm to 10 μm is preferred. When the particle size of the metal powder is greater than 10 μm , the oxide particles may not be uniformly dispersed, and when it is less than 1 μm , the sputtering target may deviate from the desired composition due to the influence of the oxidation of the metal powder.

In addition, as the oxide powder, ZnO powder, SiO ₂ powder, and/or TiO ₂ powder are prepared, and Co ₃ O ₄ , B ₂ O _3, and the like are prepared as necessary. The oxide powder preferably has a particle size in the range of 1 μm to 30 μm . Thus, when mixed with the above-mentioned metal powder and subjected to pressure sintering, the oxide particles can be more uniformly dispersed in the metal phase. When the particle size of the oxide powder is greater than 30 μm , coarse oxide particles may be generated after pressure sintering. On the other hand, when the particle size is less than 1 μm , aggregation of the oxide powder may occur.

Then, the raw material powder containing the above-mentioned metal powder and oxide powder is weighed to achieve a desired composition, and is mixed and mixed by a known method such as a ball mill, and then pulverized. At this time, the inside of the container for mixing and pulverization is filled with an inert gas, and it is desired to suppress the oxidation of the raw material powder as much as possible. Thereby, a mixed powder in which predetermined metal powder and oxide powder are uniformly mixed can be obtained.

After that, the mixed powder obtained in this way is pressurized and sintered in a vacuum environment or an inert gas environment, and molded into a predetermined shape such as a disc shape. Here, various pressure sintering methods such as a hot press sintering method, a hot isostatic pressing sintering method, and a plasma discharge sintering method can be used. Among them, the hot isostatic pressing sintering method is effective from the viewpoint of increasing the density of the sintered body.

The holding temperature during sintering is set to a temperature range of 700 to 1500°C, and particularly preferably 800°C to 1400°C. In addition, the time for maintaining the temperature in this range is preferably 1 hour or more. In addition, the pressure during sintering is preferably 10 MPa to 40 MPa, and more preferably 25 MPa to 35 MPa. Thus, the oxide particles can be more uniformly dispersed in the metal phase.

For the sintered body obtained by the above-mentioned pressure sintering, machining processing such as cutting is performed using a lathe or the like to form a desired shape, so that a sputtering target can be manufactured.

(Manufacturing method of magnetic film) The sputtering target manufactured as described above can be used to manufacture the above-mentioned magnetic film. Specifically, the sputtering target involved may be used, and usually a magnetron sputtering device is used for sputtering to form a film on a predetermined substrate or other film, and a magnetic film is formed there. Examples

Next, the sputtering target of the present invention was trial-produced, and its performance was confirmed, so it will be described below. However, the description here is for illustration only and is not intended to be limited thereto.

(Test Example 1) Weigh Co powder, Pt powder, TiO ₂ powder, SiO ₂ powder, and ZnO powder so that the composition ratio reaches 64:22:5:3:6 in terms of number of molecules, and oxidize the powder and the crushing medium The zirconium balls were sealed together in a 10-liter ball mill tank, and rotated for 24 hours to mix. Then, the mixed powder taken out of the ball mill was filled in a carbon mold having a diameter of 190 mm, and sintered by hot pressing. The hot-pressing conditions are as follows: vacuum environment, heating rate of 300°C/hour, holding temperature of 950°C, holding time of 2 hours, and pressurization at 30 MPa from the start of temperature increase to the end of holding. After the maintenance is finished, it is cooled naturally in the chamber directly. The sintered body obtained in this way was cut using a lathe to form a disc shape having a diameter of 180.0 mm and a thickness of 5.0 mm, and the sputtering target of Example 1 was produced.

Regarding the sputtering target of Example 2, except that Co powder, Pt powder, TiO ₂ powder, and ZnO powder were used as raw material powders, and the composition ratio was set to 63:21:7:9, the sputtering target of Example 1 was used. The target is made in the same way. Regarding the sputtering target of Example 3, except that Co powder, Pt powder, SiO ₂ powder, and ZnO powder were used as raw material powders, and the composition ratio was set to 64:22:5:9, the sputtering target of Example 1 was used. The target is made in the same way.

Regarding the sputtering target of Example 4, except that Co powder, Pt powder, TiO ₂ powder, ZnO powder, and Co ₃ O ₄ powder were used as raw material powders, and the composition ratio was 65:22:5:6:2, It was produced in the same manner as the sputtering target of Example 1. Regarding the sputtering target of Example 5, except that Co powder, Pt powder, TiO ₂ powder, ZnO powder, and B ₂ O ₃ powder were used as raw material powders, and the composition ratio was 65:22:5:6:2, It was produced in the same manner as the sputtering target of Example 1.

Regarding the sputtering target of Comparative Example 1, except that Co powder, Pt powder, TiO ₂ powder, and SiO ₂ powder were used as raw material powders, and the composition ratio was set to 66:22:7:5, the sputtering target of Example 1 was used. The target is produced in the same way. The sputtering target of Comparative Example 2 was carried out in the same manner as the sputtering target of Example 1, except that Co powder, Pt powder, and TiO ₂ powder were used as raw material powders, and the composition ratio was set to 64:22:14. Make. The sputtering target of Comparative Example 3 was carried out in the same manner as the sputtering target of Example 1, except that Co powder, Pt powder, and SiO ₂ powder were used as raw material powders, and the composition ratio was set to 67:23:10. Make.

For each of the sputtering targets of Examples 1 to 5 above, Smartlab. manufactured by Rigaku Corporation was used to measure the X-ray diffraction intensity on the target surface. The measurement conditions at this time are θ-2θ measurement and 2θ=10-90°. It can be seen that Zn exists in the form of Zn ₂ TiO ₄ and Zn ₂ SiO ₄ in the sputtering target of Example 1, and Zn exists in the form of Zn ₂ TiO ₄ in the sputtering targets of Examples 2, 4 and 5. In the sputtering target of Example 3, Zn exists in the form of Zn ₂ SiO ₄ . In addition, it was found that in the sputtering targets of Comparative Examples 1 to 3, since ZnO was not added, no oxide of Zn was formed.

In addition, the sputtering targets of Examples 1 to 5 and Comparative Examples 1 to 3 were placed on a magnetron sputtering device (C-3010 sputtering system manufactured by CANON ANELVA), and Ta (2.8 nm) was sequentially formed on the glass substrate ), Ni-W (5nm) and Ru (16nm) films, the resulting substrate was sputtered at 300W under Ar 5.0Pa environment to form magnetic films with thicknesses of 7nm, 11nm, 14nm and 18nm. Then, when the coercive force Hc, the magnetic anisotropy Ku, the magnetization Ms, and the slope α of the magnetization curve were measured for the magnetic films of the above-mentioned film thicknesses, the results shown in the graphs in FIGS. 1 to 5 were obtained.

In addition, here, the coercive force Hc, the magnetization Ms, and the slope α of the magnetization curve were measured using a sample vibration type magnetometer (VSM) manufactured by Tamagawa Manufacturing Co., Ltd., and the magnetic anisotropy Ku was measured using a magnetic torque meter (TRQ) manufactured by Tamagawa Manufacturing Co., Ltd.

It can be seen from FIG. 1 that by adding ZnO to TiO ₂ —SiO ₂ , the coercive force Hc increases, and the slope α of the magnetization curve decreases. In addition, from FIGS. 2 and 3, it is known that by adding ZnO to TiO ₂ and SiO ₂ respectively, the magnetization Ms and the magnetic anisotropy Ku increase, and the slope α of the magnetization curve decreases. Therefore, according to Examples 1 to 3, it is known that by adding ZnO, the separation of the magnetic particles is improved. It is also known that when Zn is added to TiO ₂ and SiO ₂ , the magnetic properties of the magnetic particles become better. In addition, it can be seen from FIG. 4 that even Examples 4 and 5 containing Co ₃ O ₄ or B ₂ O _{3 have} the same effect as that of Example 2 not containing these substances by adding ZnO. .

In addition, as described above, for each magnetic film formed using the sputtering targets of Comparative Example 1 and Examples 1 to 3, the sample was cut from the glass substrate side by Ar ion milling, and the processing was performed so that only the magnetic film remained. Then, using a transmission electron microscope (TEM) manufactured by JEOL, the magnetic film was linearly scanned by energy dispersive X-ray spectroscopy (EDX). The results are shown in Figures 5 to 8. In addition, FIGS. 5 to 8 are graphs with the vertical axis as the relative intensity and the horizontal axis as the distance (nm). FIG. 5 corresponds to the results of Comparative Example 1, and FIG. 6 corresponds to the results of Example 1. As a result, FIG. 7 corresponds to the result of Example 2, and FIG. 8 corresponds to the result of Example 3.

As shown in FIGS. 5 to 8, in Examples 1 to 3 to which ZnO is added, the increase in the element distribution curve is steep compared to Comparative Example 1, so the boundary between the oxide phase and the magnetic particle phase is clear Therefore, in Examples 1 to 3, the magnetic particles due to oxides are excellent in mutual separation.

(Test Example 2) Using sputtering targets made of Co powder, Pt powder, TiO ₂ powder, and ZnO powder, and sputtering targets made of Co powder, Pt powder, SiO ₂ powder, and ZnO powder, a number of Prototype with changed ZnO content. The manufacturing conditions are substantially the same as the conditions described in Test Example 1 above. Using each of the above test products, a magnetic film was formed by the same method as in Test Example 1, and the magnetization Ms of each magnetic film was measured. The results are shown in Figure 9.

It can be seen from Fig. 9 that the magnetized Ms increases sharply due to the small amount of Zn, and decreases slightly when the amount of Zn exceeds 15 at.%. Therefore, from the viewpoint of increasing the magnetization Ms, it can be said that the preferable amount of Zn is 1 to 15 at.%.

In addition, the compositions of the sputtering targets of Examples 1 to 5 and Comparative Examples 1 to 3 and the sputtering targets shown in FIG. 9 are shown in Table 1 as a reference. In addition, since sputtering targets of Examples 6 to 10 were also prepared, the composition of each sputtering target of Examples 6 to 10 described above is also shown in Table 1 as a reference.

Table 1

From the above, it can be seen that according to the present invention, it is possible to form a magnetic film having both good magnetic separation between magnetic particles and high coercive force and improved magnetic characteristics.

FIG. 1 shows the magnetization Ms, coercive force Hc, slope α of the magnetization curve, and magnetic anisotropy Ku of each of the magnetic films formed using the sputtering target of Example 1 and Comparative Example 1 of Test Example 1 with respect to the film thickness Graph of changes. FIG. 2 is a graph showing the magnetization Ms, coercive force Hc, slope α of the magnetization curve, and magnetic anisotropy Ku of each of the magnetic films formed using the sputtering targets of Example 2 and Comparative Example 2 of Test Example 1 with respect to the film thickness Graph of changes. FIG. 3 is a graph showing the magnetization Ms, coercive force Hc, slope α of the magnetization curve, and magnetic anisotropy Ku of each of the magnetic films formed using the sputtering targets of Example 3 and Comparative Example 3 of Test Example 1 with respect to the film thickness Graph of changes. Fig. 4 shows the magnetization Ms, coercive force Hc, slope α of the magnetization curve, and magnetic anisotropy Ku of the magnetic films formed using the sputtering targets of Examples 2, 4, 5 and Comparative Example 2 of Test Example 1. Graph with respect to changes in film thickness. FIG. 5 is a graph and a TEM image showing the results of EDX mapping of the magnetic film formed using the sputtering target of Comparative Example 1 of Test Example 1. FIG. FIG. 6 is a graph and a TEM image showing the results of EDX mapping of the magnetic film formed using the sputtering target of Example 1 of Test Example 1. FIG. FIG. 7 is a graph and a TEM image showing the results of EDX mapping of the magnetic film formed using the sputtering target of Example 2 of Test Example 1. FIG. FIG. 8 is a graph and a TEM image showing the results of EDX mapping of the magnetic film formed using the sputtering target of Example 3 of Test Example 1. FIG. FIG. 9 is a graph showing the change of the magnetized Ms of Test Example 2 with respect to the amount of Zn.

no.

Claims (10)

A sputtering target containing more than 1 at.% of Zn in atomic ratio conversion, part or all of the Zn forms a composite oxide of Zn-Ti-O and/or Zn-Si-O, with a Pt of 45 at.% or less, The balance contains Co and inevitable impurities. The sputtering target according to item 1 of the patent application scope, wherein the oxide contains Zn ₂ TiO ₄ and/or Zn ₂ SiO ₄ . The sputtering target as described in item 1 or item 2 of the patent application scope contains 1at.%~15at.% of Zn. The sputtering target according to item 1 or item 2 of the patent application scope, wherein an oxide of at least one element selected from Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti is also formed . The sputtering target according to item 1 or item 2 of the patent application scope, which also contains 60at.% or less of Au, Ag, B, Cu, Cr, Ga, Ge, Ir, Mn, Mo, At least one of Nb, Ni, Pd, Re, Rh, Ru, Si, Sn, Ti, Ta, W, V, and Zn. A magnetic film containing more than 1 at.% of Zn and Ti and/or Zn and Si. Part or all of the Zn and Ti and/or Zn and Si exist in the form of oxides, Pt is 45 at.% or less, the balance Contains Co and inevitable impurities. The magnetic film as described in item 6 of the patent application range contains Zn of 1 at.% or more and 15 at.% or less. The magnetic film according to Item 6 or Item 7 of the patent application scope, wherein an oxide of at least one element selected from Co, Cr, Si, B, W, Nb, Mn, Mo, and Ti is also formed. The magnetic film according to Item 6 or Item 7 of the patent application scope, which further contains 60 at.% or less selected from Au, Ag, B, Cu, Cr, Ga, Ge, Ir, Mn, Mo, Nb , Ni, Pd, Re, Rh, Ru, Si, Sn, Ti, Ta, W, V, and Zn. A method of manufacturing a magnetic film by forming a magnetic film by sputtering using the sputtering target according to any one of claims 1 to 5.

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