CN100440653C - Design and placement method for diode laser array outer-cavity phase-locking amplitude compensating element - Google Patents
Design and placement method for diode laser array outer-cavity phase-locking amplitude compensating element Download PDFInfo
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- CN100440653C CN100440653C CNB2006100812298A CN200610081229A CN100440653C CN 100440653 C CN100440653 C CN 100440653C CN B2006100812298 A CNB2006100812298 A CN B2006100812298A CN 200610081229 A CN200610081229 A CN 200610081229A CN 100440653 C CN100440653 C CN 100440653C
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Abstract
The present invention relates to a design and placement method for a diode laser array outer-cavity phase-locking amplitude compensating element, which belongs to the technical field of the phase locking of a semiconductor laser. The present invention makes a design according to that inphase modes are distributed on a quarter or a half of a Talbot plane when a diode laser array outer cavity is in a phase-locking mode, a designed amplitude compensation element is an object with periodic slits, the number of the slits is larger than or equal to that of the inphase modes on the plane, the width of the slits is equal to that of a half of the height of the inphase modes, and the period of the slits is equal to the period that the inphase modes on the plane are distributed; the present invention also provides a method for placing the amplitude compensation element in the cavity, and the method can be used to obtain the output of the high power inphase modes. Under the condition of a large current (I is larger than 20A), a high power diode laser array selects inphase modes and reinforces the output power of the inphase modes in an outer-cavity locking phase.
Description
Technical field
The present invention relates to a kind of diode laser array outer-cavity phase-locking amplitude compensating element and preparation method thereof, belong to the Phase Lock Technique field of semiconductor laser.
Background technology
The high-power diode laser array has purposes very widely in fields such as information processing, laser pumping, medical treatment, materials processing and national defence.But the beam quality factor of diode laser array is up to several thousand under the free working order, has limited its high efficiency and has used.Talbot exocoel Phase Lock Technique is the effective technology that improves high-power diode laser array beam quality, widens its application.
At present, the phase-locked model selection problem that exists of high-power diode laser array Talbot exocoel, not too high (under the situation of I＜20A) at electric current, rely on the deflection external cavity mirror can obtain the output of homophase mould, but, (I＞20A) when not adding any compensating element, in the chamber, often can not get the output of homophase mould under big current conditions.Therefore, diode laser array is difficult to obtain powerful single-lobe light output when exocoel is phase-locked.Trace it to its cause, under the situation of big electric current, injection current is far above the threshold current of each super model, and therefore the super model number of starting of oscillation simultaneously is more than the super model number of starting of oscillation under the little current conditions, and several super models vibrate simultaneously, and to cause the light distribution of output beam in the far field be many lobes.In the Talbot chamber, add the separating capacity that phase compensator can increase pattern, it is reported, adopt the 1/4Talbot exocoel, chamber interpolation applying aspect compensator can obtain the power output of 10W, this is the phase-locked peak power output of present exocoel, but its far field image is the bivalve mould, is actually the out-phase mode oscillation, and this is inapplicable in many occasions.In order to obtain powerful single-lobe light output, the cavity loss that also needs to strengthen the high-order super model forces the starting of oscillation of homophase mould, therefore need compensate amplitude.At present, the method for locking in EC phase time amplitude compensation yet there are no report.
Summary of the invention
The objective of the invention is to overcome the defective of existing exocoel Phase Lock Technique model selection difficulty under big electric current, a kind of diode laser array outer-cavity phase-locking amplitude compensating element and preparation method thereof is provided, this amplitude compensating element is positioned in the exocoel, obtains powerful homophase basic mode output in the time of can making diode laser array outer-cavity phase-locked.
To achieve these goals, the present invention has taked following technical scheme.Diode laser array outer-cavity phase-locking amplitude compensating element be placed on 1/4 or the 1/2Talbot plane on, this amplitude compensating element is the object with periodic slit, the number of slit be greater than or equal to 1/4 or the 1/2Talbot plane on the number of homophase mould, the width of slit with 1/4 or the 1/2Talbot plane on the halfwidth degree of homophase mould identical, the cycle of slit with 1/4 or the 1/2Talbot plane on cycle of distributing of homophase mould identical.
The preparation method of described diode laser array outer-cavity phase-locking amplitude compensating element, this method is carried out according to the following steps:
1) select for use ductility, thermal diffusivity is good and thickness less than the material of 0.1mm;
2) number, width and the cycle of slit are utilized AutoCAD software input laser, with laser cutting step 1) in selected material, prepare amplitude compensating element 2.
Amplitude compensating element among the present invention be according to diode laser array outer-cavity when phase-locked 1/4 or the 1/2Talbot plane on the distribution of homophase mould design, to certain diode laser array, the distribution of homophase mould is certain on this plane.Arrive for making the homophase mould can see through this plane that external cavity mirror high-rder mode is blocked on this plane or part stops, so design this amplitude compensating element is the object with periodic slit, the number of slit is greater than or equal to the number of homophase mould on this plane, the halfwidth degree of homophase mould is identical on the width of slit and this plane, and the cycle that the homophase mould distributes on the cycle of slit and this plane is identical.
Diode laser array obtains two conditions of powerful homophase mould output dependence when exocoel is phase-locked, at first, it is big that the power output of array itself is wanted, and this just means the array power output of current work raising self greatly; Secondly, have only the homophase mode oscillation in exocoel, other pattern just might obtain powerful homophase mould output not by starting of oscillation.When increasing injection current, the high-rder mode number of starting of oscillation also increases thereupon, therefore blocks high-rder mode in exocoel, and it is necessary increasing its loss.According to mark Talbot effect, can determine the distribution of given diode laser array homophase mould and out-phase mould on 1/4Talbot and 1/2Talbot plane.Place corresponding amplitude compensating element on one of these two planes, make the homophase mould can pass through this plane, and the out-phase mould is blocked, other high-rder mode quilt is complete or partly stopped.Like this, the loss increase of high-rder mode, threshold current raise, and cause can't starting of oscillation, has only the homophase mould in the chamber in vibration, and the power output that phase-locked array is listed in far field single-lobe light will be improved.
The present invention is used for that (under the situation of I＞20A), powerful diode laser array is selected the power output of homophase mould, enhancing homophase mould in the Talbot exocoel is phase-locked at big electric current.
Description of drawings
The distribution map of homophase mould on the 1/4Talbot plane of Figure 13 luminescence unit
The distribution map of the transmittance function of the amplitude compensating element of Figure 26 slit;
The parameter designing of Fig. 3 amplitude compensating element;
The position of Fig. 4 amplitude compensating element in exocoel;
The distribution match map of the distribution of homophase mould and amplitude compensating element transmitance on Figure 51/4Talbot plane;
Phase-locked far-field intensity distribution figure when Fig. 6 does not add amplitude compensating element
Phase-locked far-field intensity distribution figure when Fig. 7 adds amplitude compensating element
Among the figure: 1, diode laser array, 2, amplitude compensating element, 3, external cavity mirror, 4, convex lens, 5, the beam quality analyzer.
Embodiment
Present embodiment is referring to Fig. 1～Fig. 7, to the C1-60 laser array that nLIGHT company produces, and the amplitude compensation when adopting 1/4Talbot locking in EC phase system to realize that this array is phase-locked.
1, preparation amplitude compensating element, step is as follows:
1) structure of design amplitude compensating element, the design of the optical field distribution on 1/4Talbot plane when phase-locked according to diode laser array outer-cavity.Fig. 1 has provided the distribution of homophase mould on the 1/4Talbot plane of 3 luminescence units of array, and the halfwidth degree of homophase mould is 50 μ m, and the cycle is 100 μ m.The seam of amplitude compensating element is wide identical with the halfwidth degree and cycle of homophase mould on cycle and this plane, and She Ji amplitude compensating element is 50 μ m for seam is wide thus, and the cycle is the slit array of 100 μ m.Fig. 2 has provided the transmittance function of 6 slits of this amplitude compensating element.Other parameter of this element is seen Fig. 3.
2) the material selection thickness of this amplitude compensating element is the Copper Foil of 0.05mm.
3) this amplitude compensating element utilizes frequency double laser to cut according to design drawing 3.
2, the placement of amplitude compensating element in the chamber, as shown in Figure 4, step is as follows:
1) regulate the 1/4Talbot locking in EC phase system of diode laser array, realize the phase-locked of array, the output beam by beam quality analyzer 5 observing systems gets final product when light intensity becomes periodic distribution by even distribution in the distribution of slow axis.
2) in exocoel, insert amplitude compensating element 2, regulate its position, make it be close to external cavity mirror 3.
3) lateral attitude of amplitude of accommodation compensating element, 2 (along slow axis) is complementary the transmittance function of amplitude compensating element and the distribution of the homophase mould on this face, as Fig. 5.This process utilizes the output beam of beam quality analyzer 5 observing systems can determine in the distribution in far field, and when amplitude compensating element and homophase mould mated fully, the far field style of output intensity was a single-lobe.
Phase-locked (Fig. 7) when phase-locked (Fig. 6) when relatively diode laser array does not carry out the amplitude compensation at 25A, 12 ℃ time the and the amplitude of carrying out compensation shows: the present invention relies on that to suppress that coherent light that high-rder mode obtains the homophase mould exports be effective in the exocoel of heavy-duty diode laser array is phase-locked.
Claims (2)
1, diode laser array outer-cavity phase-locking amplitude compensating element, it is characterized in that: this amplitude compensating element be placed on 1/4 or the 1/2Talbot plane on, this amplitude compensating element is the object with periodic slit, the number of slit be greater than or equal to 1/4 or the 1/2Talbot plane on the number of homophase mould, the width of slit with 1/4 or the 1/2Talbot plane on the halfwidth degree of homophase mould identical, the cycle of slit with 1/4 or the 1/2Talbot plane on cycle of distributing of homophase mould identical.
2, the preparation method of diode laser array outer-cavity phase-locking amplitude compensating element as claimed in claim 1 is characterized in that: this method is carried out according to the following steps:
1) select for use ductility, thermal diffusivity is good and thickness less than the material of 0.1mm;
2) number, width and the cycle of slit are utilized AutoCAD software input laser, with laser cutting step 1) in selected material, prepare amplitude compensating element (2).
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006100812298A CN100440653C (en) | 2006-05-26 | 2006-05-26 | Design and placement method for diode laser array outer-cavity phase-locking amplitude compensating element |
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| CNB2006100812298A CN100440653C (en) | 2006-05-26 | 2006-05-26 | Design and placement method for diode laser array outer-cavity phase-locking amplitude compensating element |
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| CN1877932A CN1877932A (en) | 2006-12-13 |
| CN100440653C true CN100440653C (en) | 2008-12-03 |
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| CN100588058C (en) * | 2007-04-03 | 2010-02-03 | 蔡然 | Ultra large power two-dimensional semiconductor lock phase array stable oscillation mode technique |
| WO2023226610A1 (en) * | 2022-05-25 | 2023-11-30 | 北京工业大学 | Coherent array laser structure and preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4813762A (en) * | 1988-02-11 | 1989-03-21 | Massachusetts Institute Of Technology | Coherent beam combining of lasers using microlenses and diffractive coupling |
| US4972427A (en) * | 1989-09-14 | 1990-11-20 | Spectra Diode Laboratories, Inc. | Talbot cavity diode laser with uniform single-mode output |
| CN1391117A (en) * | 2002-07-26 | 2003-01-15 | 中国科学院上海光学精密机械研究所 | Taber effect wave-splitting beam splitter |
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- 2006-05-26 CN CNB2006100812298A patent/CN100440653C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4813762A (en) * | 1988-02-11 | 1989-03-21 | Massachusetts Institute Of Technology | Coherent beam combining of lasers using microlenses and diffractive coupling |
| US4972427A (en) * | 1989-09-14 | 1990-11-20 | Spectra Diode Laboratories, Inc. | Talbot cavity diode laser with uniform single-mode output |
| CN1391117A (en) * | 2002-07-26 | 2003-01-15 | 中国科学院上海光学精密机械研究所 | Taber effect wave-splitting beam splitter |
Non-Patent Citations (2)
| Title |
|---|
| 激光二极管阵列在Talbot外腔锁相中的超模分析. 王克俊等.激光杂志，第26卷第3期. 2005 |
| 激光二极管阵列在Talbot外腔锁相中的超模分析. 王克俊等.激光杂志，第26卷第3期. 2005 * |
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