CN100435323C - Heat radiator for wafer encapsulation and its making method - Google Patents
Heat radiator for wafer encapsulation and its making method Download PDFInfo
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- CN100435323C CN100435323C CNB200610004641XA CN200610004641A CN100435323C CN 100435323 C CN100435323 C CN 100435323C CN B200610004641X A CNB200610004641X A CN B200610004641XA CN 200610004641 A CN200610004641 A CN 200610004641A CN 100435323 C CN100435323 C CN 100435323C
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Abstract
A cooling fin and its manufacturing method which are used in wafer encapsulation, the cooling fin includes a noumenon made by the copper alloy material, a nickel-plate which is plated on the noumenon, a chromeplate layer which is plated on the nickel-plate, and an oxidizing layer which is below the noumenon. Because the chromium is easy to form passivity film, the effect of anticorrosion excels the nickel metal, plating the chromeplate layer on the surface of nickel-plate can make the cooling fin possesses more anticorrosion capability, so the phenomenon of rust-eaten to decrease the effect of cooling can be avoided, at the same time, because the cooling fin can not be corroded, so the rich-looking can be maintained.
Description
Technical field
The present invention relates to a kind of fin and manufacture method thereof, particularly relate to a kind of fin and manufacture method thereof that is used for wafer package.
Background technology
As shown in Figure 1, existing fin 2 is that substrate 12 surfaces that are connected a wafer 11 with link, this fin 2 comprises one with copper alloy material made body 20, a nickel coating 23, an oxide layer 24, and four glue filling openings 25 (because of visual angle relation, only show among the figure its two).
This body 20 comprises a radiating part 21, and one outwards and to these substrate 12 directions extends and the support portion 22 that can link with this substrate 12 from these radiating part 21 outer peripheral edges.
This radiating part 21 has a lower surface 211 that faces this substrate 12, and a upper surface 212 in contrast to this lower surface 211.This support portion 22 has the lower surface 211 outward extending inner surfaces 221 from this radiating part 21, and the outer surface 222 of the upper surface 212 of this radiating part 21 of connection.
This nickel coating 23 are upper surfaces 212 of being coated on this radiating part 21 with the outer surface 222 of this support portion 22 on.This oxide layer 24 is to be positioned at the lower surface 211 of this radiating part 21 and the inner surface 221 of this support portion 22.This four glue filling opening 25 be positioned at this support portion 22 around and connect this nickel coating 23, support portion 22, and oxide layer 24 can import for the viscose glue of encapsulation usefulness.
As shown in Figure 1, 2, the manufacture of this fin 2 is to get the metallic plate of a copper alloy.Earlier this metallic plate being cleaned, mainly is lip-deep pollutant to be cleaned remove.Then, carry out pickling, the upper surface of this metallic plate is soaked in the acid solution, rusty scale corrosion already oxidised on this upper surface is removed; Then, this upper surface is electroplated (Electroplating) nickel dam, the practice is that this metallic plate is connected with negative electricity, this upper surface 212 is soaked stagnate in the electroplate liquid that contains nickel ion, but energising is afterwards with regard to plating one nickel dam; Then, wash oven dry, the electroplate liquid that previous step residues on the metallic plate is suddenly removed and oven dry towards cleaning with clear water; Then, this metallic plate is carried out punch forming; At last, carry out oxidation processes, the workpiece after the moulding is soaked in oxidizing solution, just finish the making of this fin 2.
Because wafer 11 can produce high heat when carrying out computing, utilize this fin 2 to be attached at this wafer 11 to take away the heat that this wafer 11 is produced, can't operate as normal in case the temperature of this wafer 11 is too high.Be that these fin 2 lids are covered this wafer 11 during packaging operation, and four glue filling openings, 25 importings of this fin 2 encapsulate with viscose glue and make it to solidify certainly, finish packaging operation.This nickel coating 23 produces the oxidations except the body 20 that can prevent this copper alloy and make, and also can promote attractive in appearancely, and the oxide layer 24 of this black is can help encapsulation evenly to distribute with viscose glue and improve heat absorption efficiency.
Yet, when reality is used this fin 2, though this nickel coating 23 has the ability of anti-oxidation corrosion, but, near the inhabitation seashore limit or have for the user that sea wind brushes the region, owing to can contain the seawater salt in the air, still can cause this nickel coating 23 that the situation of oxidation corrosion is arranged, add because this fin 2 normally is under the state of higher temperatures, and the temperature height also can make its antirust ability give a discount, accelerate corrosion rate.Can transfer a dim thing at short notice to from the surface of bright nickel plating layer this air can obtain to confirm.In other words, only with this nickel coating 23 as preventing that oxidation corrosion from being inadequate, moreover, when this fin 2 produces oxidation corrosions, can reduce its radiating effect, also do not allow visual sense good and influence attractive in appearance simultaneously.
Summary of the invention
The objective of the invention is to have preferable antirust ability, to guarantee radiating effect and attractive in appearance for a kind of fin and manufacture method thereof that is used for wafer package is provided.
For achieving the above object, the present invention is used for the fin of wafer package, is that the substrate surface that is connected this wafer with links, and this fin comprises the made body of a copper alloy material, a nickel coating, a chromium coating, and an oxide layer.This body comprises a radiating part, and one outwards and to this orientation substrate extend and the support portion that can link with this substrate from these radiating part outer peripheral edges, this radiating part has a lower surface that faces this substrate, an and upper surface in contrast to this lower surface, this support portion has one from the outward extending inner surface of the lower surface of this radiating part, reaches one from the outward extending outer surface of the upper surface of this radiating part.This nickel coating is that the nickel metal is made and be coated on the outer surface of the upper surface of this radiating part and this support portion.This chromium coating is that the chromium metal is made and be coated on the surface of this nickel coating.This oxide layer is positioned on the inner surface of the lower surface of this radiating part and this support portion.
The present invention is used for the manufacture method of the fin of wafer package, comprise one and prepare step, a pre-treatment step, one first acid pickling step, a nickel plating step, one second acid pickling step, a chromium plating step, a post-processing step, a forming step, and an oxidation step.
This prepares step is to prepare a metallic plate made from the copper alloy material, and this metallic plate has a upper surface, and a lower surface in contrast to this upper surface.This pre-treatment step is a upper and lower lip-deep pollutant of removing this metallic plate.This first acid pickling step carries out pickling to the upper surface of this metallic plate, removes the rusty scale on surface with dissolving.This nickel plating step is that the upper surface to this metallic plate carries out nickel plating, in order to form at least one nickel coating.This second acid pickling step is that pickling is carried out on the nickel coating surface of this metallic plate, removes the rusty scale on surface with dissolving.This chromium plating step is that chromium plating is carried out on the nickel coating surface of this metallic plate, in order to form a chromium coating.This post-processing step is to residue in the electroplate liquid on this metallic plate and dry this metallic plate in order to removing.This forming step is that this metallic plate is carried out the punch forming processing procedure, to mold a plurality of fin.This oxidation step is that described fin is soaked in the oxidizing solution, makes the bottom surface of fin produce oxidation, to form oxide layer.
Effect of the present invention is because chromium metal itself easily forms passive state film as thin as a wafer in atmosphere, can isolate contacting of outside air and chromium metal, so no matter is in atmosphere or contains in the air of seawater salt, and is all difficult by corrosion.Utilize this chromium coating plating on the surface of this nickel coating, form the good protective coating of corrosion resistance, prevent that effectively this fin from producing the phenomenon of corrosion, and can guarantee the radiating effect of this fin and promote attractive in appearance.
Description of drawings
Fig. 1 is a generalized section, illustrates that the existing fin that is used for wafer package is to link together with a substrate;
Fig. 2 is a flow chart, and the manufacture method of existing fin is described;
Fig. 3 is a generalized section, illustrates that the present invention is used for the preferred embodiment of the fin of wafer package, is to be encapsulated on the substrate;
Fig. 4 is the stereogram that the present invention is used for the fin of wafer package;
Fig. 5 is a flow chart, illustrates that the present invention is used for the preferred embodiment of manufacture method of the fin of wafer package;
Fig. 6-1,6-2 are the making schematic flow sheets of Fig. 5.
Embodiment
Below by preferred embodiment and accompanying drawing fin and the manufacture method thereof that the present invention is used for wafer package is elaborated.
Shown in Fig. 3,4, the present invention is used for the preferred embodiment of the fin of wafer package, this fin 5 is that the substrate 42 that is connected a wafer 41 with is done the surface binding, this fin that is used for wafer package comprises a body 50 made from the copper alloy material, stacked nickel coating 53, a chromium coating 54, an oxide layer 55 about in the of two, and four glue filling openings 56.
The body 50 of this fin 5 comprises a rounded tabular radiating part 51, and one outwards and towards these substrate 42 directions extends and the support portion 52 that can link with this substrate 42 from these radiating part 51 outer peripheral edges.This radiating part 51 has a lower surface 511 that faces this substrate 42, an and upper surface 512 in contrast to this lower surface 511, this support portion 52 has the lower surface 511 outward extending inner surfaces 521 from this radiating part 51, and the upper surface 512 outward extending outer surfaces 522 from this radiating part 51.
On the outer surface 522 of this two nickel coating 53 and upper surface 512 of being coated on this radiating part 51 made and this support portion 52 for the nickel metal.In this preferred embodiment, be to be example, but in fact also can have only simple layer nickel coating 53 with duplex nickel plating layer 53, certainly, also can use the nickel coating 53 more than two layers, then can also improve its corrosion protection result.
This chromium coating 54 is made and be coated on the surface of this nickel coating 53 for the chromium metal.This oxide layer 55 are lower surfaces 511 of being positioned at this radiating part 51 with the inner surface 521 of this support portion 52 on.About this two nickel coating 53, chromium coating 54, and the generation type of oxide layer 55, ask for an interview aftermentioned.
This four glue filling opening 56 be positioned at this support portion 52 around and connect this chromium plating 54, two nickel coatings 53, support portion 52, and oxide layer 55.Can import between this fin 5 and the substrate 42 for the viscose glue of encapsulation usefulness, this wafer 41 is fixing with fin 5 encapsulation.
Because chromium metal itself easily forms passive state film as thin as a wafer in atmosphere, can isolate contacting of outside air and chromium metal, adding the chromium metal itself is to belong to high hardness material, no matter allow this fin 5 be in atmosphere or to contain in the air of seawater salt and use, all can keep original surface of good state, to guarantee its radiating effect and attractive in appearance.
As shown in Figure 5, the present invention is used for the preferred embodiment of manufacture method of the fin of wafer package, comprise one and prepare step 61, a pre-treatment step 62, one first acid pickling step 63, a nickel plating step 64, one second acid pickling step 65, a chromium plating step 66, a post-processing step 67, a forming step 68, and an oxidation step 69.It should be noted that above-mentioned step is can be on automation equipment, one transmits to carry out each step with standing for a moment, reaches automated production.
Shown in Fig. 5,6-1, this prepares step 61 is to prepare a metallic plate 7 made from the copper alloy material, and this metallic plate 7 has a upper surface 71, and a lower surface 72 in contrast to this upper surface 71.
This pre-treatment step 62 be remove this metallic plate 7 upper and lower surperficial 71,72 on pollutant, pollutant herein may be impurity such as grease, oxidation scale, or dust, be this metallic plate 7 in make, the processing carrying, or produce between storage life the time.The purpose of pre-treatment is in order can to obtain good coating, to avoid the above-mentioned follow-up electroplating activity of pollutant effect, and the problem that causes coating to peel off easily.
This pre-treatment step 62 comprises the step 621 of deoiling in regular turn, and an electrolytic degreasing step 622.This step 621 of deoiling is that this metallic plate 7 is soaked in the liquid that deoils, for example in alkalescence or the acid solution, with remove this metallic plate 7 upper and lower surperficial 71,72 on oiliness impurity.When actual treatment, can also heat the liquid that deoils, to improve removal effect and speed.
This electrolytic degreasing step 622 is to make this metallic plate 7 be soaked in the electrolyte and pass to electric current, can't remove grease and impurity completely to remove in this deoils step 621.Because upper and lower surperficial 71,72 of this metallic plate 7 can exist small pore, remove totally and be difficult to spend fluid, therefore, adopt the mode of electrolysis, grease in the pore and Impurity removal is clean.When practical operation, can look the demand of product, add that ultrasonic waves generation equipment produces high-frequency vibration and produces the vacuum steam bubble, will be arranged in the Impurity removal of depths or areola.
This first acid pickling step 63 is that the upper surface 71 to this metallic plate 7 carries out pickling, removes the oxidation corrosion part on top layer with dissolving, makes these metallic plate 7 original metals to expose out, presents the state of activation.For the oxidation corrosion part of removing copper alloy, the pickle that can use nitric acid to mix with sulfuric acid directly sprays or is soaked in the surface that desire is electroplated.Finish after the pickling operation, preferably, available neutral solution as water is washed this metallic plate 7, removes the pickle that remains in this upper surface 71 to dash, and avoids influencing next step.
Be noted that,, be considerable for the control of its concentration and soak time, otherwise corrode the excessive rough surface that causes easily because pickle removed scale or oxide in the mode that dissolving is corroded.When practical operation, can in pickle, add suitable inhibitor, cut down its thickness to prevent to corrode excessive, the useful life that can also prolong the descaling bath of splendid attire pickle simultaneously.
This nickel plating step 64 is that the upper surface 71 to this metallic plate 7 carries out nickel plating, in order to form a nickel dam 73, certainly, also can carry out nickel plating repeatedly repeatedly, to form two-layer or two-layer above nickel dam 73.In this preferred embodiment, be to form two layers of nickel dam 73.The actual practice is to allow the upper surface 71 of this metallic plate 7 impregnated in contain nickel metal ion (Ni
+) nickel-plating liquid in (for example inferior nickel of sulfuric acid, protochloride nickel, the inferior nickel of amidosulfonic acid etc., or the mixing of above material), this metallic plate 7 is electrically connected negative poles and passes to electric current, and the nickel metal ion in the nickel-plating liquid can be attached to gradually on the upper surface 71 of this metallic plate 7 and form this nickel dam 73.Can be by the concentration, the electric current and voltage intensity of input of control nickel-plating liquid, or the temperature of nickel-plating liquid, reach the predetermined plating rate and the thickness of nickel dam 73.
When carrying out this nickel plating step 64, bright the polishing material of adding arranged in nickel-plating liquid, can make the surface of this nickel dam 73 be the smoothly form of shape of light.This is because bright polishing material is a kind of organic substance, it is easy to be adsorbed in the projecting point of metal surface, make more metal can be plated on the valley point of depression, therefore, by the effect of bright polishing material, can make the nickel metal ion fill up the trickle concave point of this nickel dam 73, smooth to help the surface, and can obtain the level and smooth surface of light, promote attractive in appearance.Yet, when in this nickel-plating liquid, adding vaporific additive, can cause the surface of this nickel dam 73 to present the form of brightless cloudy surface shape.Preferably, after finishing this nickel plating step 64, can residue in lip-deep nickel-plating liquid as the neutral solution flushing of water and so on.
What deserves to be mentioned is, electrodeless nickel plating (Electroless Plating) is also applicable to nickel plating step 64 of the present invention, it is to utilize chemical reduction reaction and make the nickel metal deposition on base material, usually need add that catalyst could start reduction reaction, this part knows usually that for having the knowledgeable is known, will not describe in detail at this.
This second acid pickling step 65 is that pickling is carried out on nickel dam 73 surfaces on this metallic plate 7, removes the rusty scale on surface with dissolving.This second acid pickling step 65 roughly is identical with first acid pickling step 63, and relevant content repeats no more referring to above-mentioned explanation herein.
Shown in Fig. 5,6-2, this chromium plating step 66 is that chromium plating is carried out on outermost nickel dam 73 surfaces on this metallic plate 7, in order to form a chromium layer 74.Its practice is in containing chromium metal ion (Cr with nickel dam 73 surface impregnations on this metallic plate 7
6+) chromium plating liquid in, make this metallic plate 7 be connected and pass to electric current with negative electricity, the chromium metal ion in the chromium plating liquid is attached on the surface of this nickel dam 73, form this chromium layer 74.In general, because the hardness of chromium metal itself is higher and corrosion protection result is good, the thickness of the chromium layer 74 of institute's plating only needs tens of microns thin usually.Also because of these chromium layer 74 suitable approaching, the surface state of this chromium layer 74 is to change along with accompanying nickel dam 73 configurations of surface, is when presenting wet look as the surface when this nickel dam 73, and then the surface of this chromium layer 74 also is wet look; When this nickel dam 73 is when presenting the cloudy surface shape, then the surface of this chromium layer 74 is to be the cloudy surface shape.
This post-processing step 67 is to residue in chromium plating liquid on the chromium layer 74 of this metallic plate 7 in order to removing.This post-processing step 67 comprises a cleaning step 671 in regular turn, and a baking step 672.This cleaning step 671 is to wash this metallic plate 7 with the neutral cleaning fluid as water, and to dash the chromium plating liquid that removes on this metallic plate 7, this baking step 672 then is that the cleaning fluid on this metallic plate 7 is given hyperthermia drying.
This forming step 68 is that this metallic plate 7 is carried out the punch forming processing procedure, to mold the shape of this fin 5, makes this chromium layer 74 form this chromium coating 54, and this two nickel dam 73 just forms this two nickel coating 53.
This oxidation step 69 is that described fin 5 is soaked in the oxidizing solution, makes the bottom surface of this fin 5 produce oxidation, to form the cupric oxide of black, is this oxide layer 55 just.Above-mentioned oxidizing solution is to contain in the high concentration basic solution of oxidant, can make the metal surface be converted into oxide.Preferably, still need, remove oxidation solution to dash with the neutral solution flushing.
What deserves to be mentioned is, because the adhesion of chromium metal and copper metal is less than the adhesion of chromium metal and metal, preferably, and should the described nickel dam 73 of first plating, this chromium layer 74 of plating again is with must preferable adhesion effect.
As shown in Figure 3, conclude above-mentioned, the present invention is used for the fin and the manufacture method thereof of wafer package, be to utilize chromium coating 54 to be plated on the nickel coating 53 of this fin 5 with preferable corrosion protection result, just on outermost surface, utilize chromium metal itself in atmosphere, easily to form the characteristic of passive state film as thin as a wafer, to isolate contacting of outside air and chromium metal, make this fin 5 at atmosphere, or even when in the air that contains the seawater salt, using, still can possess its original surface state, be unlikely the generation corrosion phenomena, can guarantee its radiating effect and promote attractive in appearance, so can reach purpose of the present invention really.
Claims (9)
1. fin that is used for wafer package, be that the substrate surface that is connected described wafer with links, the described fin that is used for wafer package comprises a body, one nickel coating, an and oxide layer, described body is that the copper alloy material is made, and comprise a radiating part, and one outwards and to this orientation substrate extend and the support portion that can link with this substrate from described radiating part outer peripheral edges, described radiating part has a lower surface that faces described substrate, an and upper surface in contrast to described lower surface, described support portion has one from the outward extending inner surface of the lower surface of described radiating part, reach one from the outward extending outer surface of the upper surface of described radiating part, described nickel coating is that the nickel metal is made and be coated on the outer surface of the upper surface of described radiating part and described support portion, described oxide layer is to be positioned on the inner surface of the lower surface of described radiating part and described support portion, it is characterized in that:
It is one made and be coated on the lip-deep chromium coating of described nickel coating for the chromium metal that the described fin that is used for wafer package also comprises.
2. be used for the fin of wafer package according to claim 1, it is characterized in that:
Described fin comprises the nickel coating that a plurality of upper surfaces that are coated on described body are overlappingly also made for the nickel metal material.
3. manufacturing method of heat sink that is used for wafer package is characterized in that comprising following steps:
One prepares step, prepares a metallic plate made from the copper alloy material, and described metallic plate has a upper surface, and a lower surface in contrast to described upper surface;
One pre-treatment step is attached to the upper and lower lip-deep pollutant of described metallic plate in order to removal;
One first acid pickling step carries out pickling to the upper surface of described metallic plate, removes the rusty scale on surface with dissolving;
One nickel plating step is carried out nickel plating to the upper surface of described metallic plate, in order at least one nickel dam of plating;
One second acid pickling step carries out pickling to the nickel dam surface on the described metallic plate, removes its surperficial rusty scale with dissolving;
One chromium plating step is carried out chromium plating to the nickel coating surface of described metallic plate, in order to plating one chromium layer;
One post-processing step residues in the electroplate liquid on the described metallic plate and dries described metallic plate in order to removing;
One forming step carries out the punch forming processing procedure to described metallic plate, to mold fin; And
One oxidation step is soaked in fin in the oxidizing solution, makes the bottom surface of fin produce oxidation, forms oxide layer.
4. as being used for the manufacturing method of heat sink of wafer package as described in the claim 3, it is characterized in that:
In described nickel plating step, be to allow the upper surface of described metallic plate impregnated in the nickel-plating liquid that contains the nickel metal ion and pass to electric current, described nickel dam is exactly to be attached on the upper surface of described metallic plate formed by the nickel metal ion in the nickel-plating liquid.
5. as being used for the manufacturing method of heat sink of wafer package as described in the claim 4, it is characterized in that:
In described nickel plating step, be to see through in described nickel-plating liquid, to add vaporific additive, make the surface of described nickel dam be the form of cloudy surface shape.
6. as being used for the manufacturing method of heat sink of wafer package as described in the claim 4, it is characterized in that:
In described nickel plating step, be to see through in this nickel-plating liquid, to add bright polishing material, make the surface of described nickel dam be the smoothly form of shape of light.
7. as being used for the manufacturing method of heat sink of wafer package as described in the claim 3, it is characterized in that:
In described chromium plating step, be to allow the surface impregnation of nickel dam of described metallic plate in the chromium plating liquid that contains the chromium metal ion and pass to electric current, described chromium layer be exactly by the chromium metal ion in the chromium plating liquid be attached on the upper surface of described nickel dam form.
8. as being used for the manufacturing method of heat sink of wafer package as described in the claim 3, it is characterized in that:
Described pre-treatment step comprises the step of deoiling, an and electrolytic degreasing step, the described step of deoiling is described metallic plate to be soaked in one deoil in the liquid, to remove the impurity on the described metal sheet surface, described electrolytic degreasing step is to make described metallic plate be soaked in the electrolyte and pass to electric current, can't remove grease completely to remove in the described step of deoiling.
9. as being used for the manufacturing method of heat sink of wafer package as described in the claim 3, it is characterized in that:
Described post-processing step comprises a cleaning step, an and baking step, described cleaning step is that the cleaning fluid with neutrality washes described metallic plate, and to dash the chromium plating liquid that removes on described metallic plate, described baking step is dried the cleaning fluid on the described metallic plate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610004641XA CN100435323C (en) | 2006-01-23 | 2006-01-23 | Heat radiator for wafer encapsulation and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610004641XA CN100435323C (en) | 2006-01-23 | 2006-01-23 | Heat radiator for wafer encapsulation and its making method |
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| CN101009254A CN101009254A (en) | 2007-08-01 |
| CN100435323C true CN100435323C (en) | 2008-11-19 |
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Families Citing this family (2)
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| CN111755400B (en) * | 2019-03-29 | 2023-08-08 | 比亚迪股份有限公司 | Radiating element, manufacturing method thereof and IGBT module |
| CN110957286A (en) * | 2019-12-04 | 2020-04-03 | 矽品科技（苏州）有限公司 | Slice disconnect-type fin subassembly |
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| JP2000150698A (en) * | 1998-11-18 | 2000-05-30 | Kyocera Corp | Package for containing semiconductor element |
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| CN1498521A (en) * | 2001-03-21 | 2004-05-19 | ��ʽ��������;��ѧ | Radiating fin and radiating method using the radiating fin |
| JP2005002470A (en) * | 2003-05-16 | 2005-01-06 | Hitachi Metals Ltd | High thermal conduction and low thermal expansion composite material, heat radiation substrate, and their production method |
| CN1574300A (en) * | 2003-05-22 | 2005-02-02 | 新光电气工业株式会社 | Packaging component and semiconductor package |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH063086A (en) * | 1992-06-18 | 1994-01-11 | Daido Steel Co Ltd | Radiation member and manufacture thereof |
| JPH10118731A (en) * | 1996-10-16 | 1998-05-12 | Nippon Inter Electronics Corp | Manufacture of heat radiating fin |
| JP2000150698A (en) * | 1998-11-18 | 2000-05-30 | Kyocera Corp | Package for containing semiconductor element |
| CN1372316A (en) * | 2001-02-23 | 2002-10-02 | 新光电气工业株式会社 | Cast mould inlaid radiator, semiconductor device using same and making method thereof |
| CN1498521A (en) * | 2001-03-21 | 2004-05-19 | ��ʽ��������;��ѧ | Radiating fin and radiating method using the radiating fin |
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| CN101009254A (en) | 2007-08-01 |
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