CN100435011C - Multiple domain vertical alignment pixel and its producing method - Google Patents
Multiple domain vertical alignment pixel and its producing method Download PDFInfo
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- CN100435011C CN100435011C CNB200610143119XA CN200610143119A CN100435011C CN 100435011 C CN100435011 C CN 100435011C CN B200610143119X A CNB200610143119X A CN B200610143119XA CN 200610143119 A CN200610143119 A CN 200610143119A CN 100435011 C CN100435011 C CN 100435011C
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Abstract
The invention provides a multi-domain vertical-allocation pixel structure, including an active component, a protective layer, a first pixel electrode, a second pixel electrode, a capacitor coupled electrode and a semiconductor layer. Among them, the active component on the substrate has an insulating layer. In addition, the protective layer coats the active component and some parts of insulation layer. The first and second pixel electrodes are all installed on the protective layer, and insulated. In addition, the capacitor coupled electrode is allocated between the second pixel electrode and the substrate. The semiconductor layer is set between the insulation layer and protective layer, and the insulation and protective layers have a trench and a lateral erosion groove on the wall of the trench that exposes the lateral margin of semiconductor layer.
Description
Technical field
The invention relates to a kind of dot structure and manufacture method thereof, and particularly relevant for a kind of multi-domain perpendicular alignment-type pixel structure (multi-domain vertical alignment pixel structure) and manufacture method thereof.
Background technology
Social now multimedia technology is quite flourishing, is indebted to the progress of semiconductor element and display device mostly.With regard to display, have that high image quality, space utilization efficient are good, the LCD of low consumpting power, advantageous characteristic such as radiationless becomes the main flow in market gradually.In order to allow LCD that better display quality is arranged, developed at present the LCD that various wide viewing angles on the market, common for example have a copline switch type (in-plane switching, IPS) LCD, limit switch type (fringefield switching) LCD and multi-domain perpendicular alignment-type (multi-domain verticallyalignment, MVA) LCD etc.
Figure 1A is the synoptic diagram of existing multi-domain perpendicular alignment-type pixel structure.Please refer to Figure 1A, existing multi-domain perpendicular alignment-type pixel structure 100 is disposed on the substrate 102.Multi-domain perpendicular alignment-type pixel structure 100 mainly is to share 140 formations of distribution (common line) by an active member 110, one first pixel electrode 120, one second pixel electrode 122, a plurality of capacitive coupling electrode (capacitor-coupling electrode) 130, one irrigation canals and ditches T1, a protective seam 110i, an insulation course 110p and one.Particularly, active member 110 is suitable for electrically connecting with an one scan line 104 and a data line 106.In addition, active member 110 can electrically connect with first pixel electrode 120 by contact hole C1.On the practice, switching signal can be opened active member 110 by the transmission of sweep trace 104, and opening the back shows signal at active member 110 can be passed in first pixel electrode 120 by active member 110.On the other hand, active member 110 can electrically connect with capacitive coupling electrode 130, and shared wiring 140 can be connected to a reference voltage source.
Ideally, first pixel electrode 120 can be electrically insulated with second pixel electrode 122, and second pixel electrode 122 can with capacitive coupling electrode 130 couplings (coupling) of its below.In other words, after active member 110 is opened, first pixel electrode 120 can have different voltage respectively with second pixel electrode 122, and makes corresponding first pixel electrode 120 can present different tilt states respectively with the liquid crystal (not illustrating) of second pixel electrode 122.
It should be noted that in the manufacture process of multi-domain perpendicular alignment-type pixel structure 100 residual first pixel electrode 120 and second pixel electrode 122 of making because of material electrically connects probably.Shown in Figure 1B, it is the diagrammatic cross-section along the profile line I-I ' shown in Figure 1A.Particularly, when making first pixel electrode 120 and second pixel electrode 122, because of the particulate factors such as (particle) of environment or board, unnecessary residue R is arranged probably and make between first pixel electrode 120 and second pixel electrode 122.In other words, first pixel electrode 120 and second pixel electrode 122 can electrically connect mutually by residue R, and then the usefulness of multi-domain perpendicular alignment-type pixel structure 100 is caused harmful effect, and improved necessity is arranged in fact.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of manufacture method of multi-domain perpendicular alignment-type pixel structure, with effective lifting process yield.
Another object of the present invention provides a kind of multi-domain perpendicular alignment-type pixel structure, and it has better reliability degree.
For reaching above-mentioned or other purpose, the present invention proposes a kind of multi-domain perpendicular alignment-type pixel structure, and it comprises an active member, a protective seam, one first pixel electrode, one second pixel electrode, a capacitive coupling electrode and semi-conductor layer.Wherein, active member is disposed on the substrate, and active member has an insulation course that extends to the outer and covered substrate of active member.In addition, protective seam covers active member and partial insulating layer.Above-mentioned first pixel electrode and second pixel electrode all are disposed on the protective seam.Wherein, first pixel electrode and active member electrically connect, and second pixel electrode and first pixel electrode are electrically insulated.In addition, capacitive coupling electrode is disposed between second pixel electrode and the substrate, and capacitive coupling electrode and active member electric connection.Above-mentioned semiconductor layer is disposed between insulation course and the protective seam, and wherein insulation course and protective seam have irrigation canals and ditches and and be positioned at lateral erosion groove on the sidewall of irrigation canals and ditches, and the lateral erosion groove exposes the lateral margin of semiconductor layer.
In one embodiment of this invention, above-mentioned lateral erosion groove can be positioned on the sidewall of the irrigation canals and ditches that are close to first pixel electrode.
In one embodiment of this invention, above-mentioned lateral erosion groove can be positioned on the sidewall of irrigation canals and ditches of contiguous first pixel electrode and be positioned on the sidewall of irrigation canals and ditches of contiguous second pixel electrode.
In one embodiment of this invention, above-mentioned lateral erosion groove can be positioned on the sidewall of the irrigation canals and ditches that are close to second pixel electrode.
In one embodiment of this invention, above-mentioned semiconductor layer can comprise amorphous silicon layer.
In one embodiment of this invention, above-mentioned multi-domain perpendicular alignment-type pixel structure also comprises a reservior capacitor, and it is disposed on the substrate, and reservior capacitor and active member electric connection.
In one embodiment of this invention, above-mentioned reservior capacitor can comprise one first capacitance electrode and one second capacitance electrode.Wherein, first capacitance electrode is disposed on the substrate, and insulation course covers first capacitance electrode.Second capacitance electrode is disposed on the insulation course of first capacitance electrode top, and electrically connects with active member.
In one embodiment of this invention, above-mentioned capacitive coupling electrode electrically connects with active member by second capacitance electrode.
In one embodiment of this invention, above-mentioned capacitive coupling electrode is between insulation course and protective seam.
In one embodiment of this invention, above-mentioned active member also comprises a grid, a channel layer, one source pole and a drain electrode.Wherein, gate configuration is on substrate, and the insulation course cover grid.In addition, channel layer is disposed on the insulation course of grid top.Above-mentioned source electrode and drain configuration are on channel layer, and source electrode and drain electrode are positioned at the both sides of grid.
In one embodiment of this invention, above-mentioned active member also comprises an ohmic contact layer, and it is disposed between channel layer and source electrode and channel layer and the drain electrode.
The present invention proposes a kind of manufacture method of multi-domain perpendicular alignment-type pixel structure, and it comprises the following steps: at first, and a substrate is provided, and forms a grid on substrate.Then, on substrate, form an insulation course, with cover grid.Then, form a channel layer and semi-conductor layer on insulation course, wherein channel layer is positioned at the grid top.Afterwards, form one source pole, a drain electrode and a capacitive coupling electrode, wherein source electrode and drain electrode are positioned on the channel layer, and lay respectively at the both sides of grid.Then, on substrate, form a protective seam, to cover the channel layer and the semiconductor layer of source electrode, drain electrode, part.Then, in protective seam, form a contact window exposing drain electrode, and formation one irrigation canals and ditches and are positioned at lateral erosion groove on the sidewall of irrigation canals and ditches in protective seam and insulation course, so that the lateral erosion groove exposes the lateral margin of semiconductor layer.Afterwards; on the protective seam of irrigation canals and ditches both sides, form one first pixel electrode and one second pixel electrode respectively; wherein first pixel electrode electrically connects by contact window and drain electrode, and second pixel electrode is positioned at the capacitive coupling electrode top, and is electrically insulated with first pixel electrode.
In one embodiment of this invention; the formation method of above-mentioned irrigation canals and ditches can comprise the protective seam that uses an etching technics to remove part, the semiconductor layer and the partial insulating layer of part, and etching technics is higher than the etching rate of etching technics for protective seam and insulation course for the etching rate of semiconductor layer.
In one embodiment of this invention, the manufacture method of above-mentioned multi-domain perpendicular alignment-type pixel structure also is included in and forms a reservior capacitor on the substrate, and reservior capacitor and drain electrode electric connection.
In one embodiment of this invention, the formation method of above-mentioned reservior capacitor comprises the following steps: at first, forms one first capacitance electrode.Afterwards, form one second capacitance electrode in first capacitance electrode top, wherein drain electrode electrically connects with second capacitance electrode.
In one embodiment of this invention, above-mentioned first capacitance electrode can form in the lump with grid, and second capacitance electrode can form in the lump with source electrode and drain electrode.
In one embodiment of this invention, above-mentioned capacitive coupling electrode can be to form in the lump with source electrode and drain electrode.
In one embodiment of this invention, the manufacture method of above-mentioned multi-domain perpendicular alignment-type pixel structure also is included in and forms an ohmic contact layer between channel layer and source electrode and channel layer and the drain electrode.
The invention provides a kind of multi-domain perpendicular alignment-type pixel structure, it comprises an active member, a dielectric layer, one first pixel electrode, one second pixel electrode, a capacitive coupling electrode and a lateral erosion material layer.Wherein, active member and dielectric layer are disposed on the substrate.In addition, first pixel electrode and second pixel electrode all are disposed on the dielectric layer.In addition, first pixel electrode and active member electrically connect, and second pixel electrode and first pixel electrode are electrically insulated.Above-mentioned capacitive coupling electrode is disposed between second pixel electrode and the substrate, and capacitive coupling electrode and active member electric connection.Above-mentioned lateral erosion material layer is disposed in the dielectric layer, and dielectric layer has irrigation canals and ditches and and is positioned at lateral erosion groove on the sidewall of irrigation canals and ditches.Wherein, the lateral erosion groove exposes the lateral margin of lateral erosion material layer.
The invention provides a kind of manufacture method of multi-domain perpendicular alignment-type pixel structure, it comprises the following steps: at first, and a substrate is provided.Then, on substrate, form an active member, a dielectric layer, a capacitive coupling electrode and a lateral erosion material layer.Wherein, capacitive coupling electrode and lateral erosion material layer are positioned at dielectric layer.Then, in dielectric layer, form lateral erosion groove on the sidewall that a contact window, irrigation canals and ditches and be positioned at irrigation canals and ditches, so that the lateral erosion groove exposes the lateral margin of semiconductor layer.Afterwards, on the dielectric layer of irrigation canals and ditches both sides, form one first pixel electrode and one second pixel electrode respectively.Wherein, first pixel electrode electrically connects by contact window and active member, and second pixel electrode and first pixel electrode are electrically insulated, and is positioned at the capacitive coupling electrode top.
Because the manufacture method of multi-domain perpendicular alignment-type pixel structure of the present invention forms the lateral erosion groove on trench sidewall, therefore first pixel electrode and second pixel electrode can be guaranteed to be electrically insulated each other by the obstruct of lateral erosion groove, with effective raising process yield.Therefore, just good quality can be arranged by the formed multi-domain perpendicular alignment-type pixel structure of manufacture method of the present invention.
Description of drawings
Figure 1A is the synoptic diagram of existing multi-domain perpendicular alignment-type pixel structure.
Figure 1B is the diagrammatic cross-section along the profile line I-I ' shown in Figure 1A.
Fig. 2 A to Fig. 2 E is the manufacturing process diagrammatic cross-section of the multi-domain perpendicular alignment-type pixel structure of first embodiment of the invention.
Fig. 3 A to Fig. 3 D is the local top view of manufacturing process of the multi-domain perpendicular alignment-type pixel structure of first embodiment of the invention.
Fig. 4 A to Fig. 4 B is the manufacturing process diagrammatic cross-section of the multi-domain perpendicular alignment-type pixel structure of second embodiment of the invention.
Fig. 5 A to Fig. 5 B is the manufacturing process diagrammatic cross-section of the multi-domain perpendicular alignment-type pixel structure of third embodiment of the invention.
The main element symbol description:
100,200,300,400: multi-domain perpendicular alignment-type pixel structure
102,202: substrate 104,203a: sweep trace
106: data line 110,210: active member
110i: protective seam 110p: insulation course
120,230a: first pixel electrode
122,230b: second pixel electrode
130,208a: capacitive coupling electrode
140,203c: shared wiring
203b: the first capacitance electrode 203g: grid
204: insulation course 205a: semiconductor layer
205c: channel layer 206a: ohmic contact layer
206b:N type doped amorphous silicon layer 208: data line
208b: the second capacitance electrode 208d: drain electrode
208s: source electrode 220: protective seam
Cst: reservior capacitor C1: contact hole
C2, contact window R: residue
T1, T2: irrigation canals and ditches S: lateral erosion groove
Embodiment
The present invention is described in detail below in conjunction with accompanying drawing.
First embodiment
Fig. 2 A to Fig. 2 E is the manufacturing process diagrammatic cross-section of the multi-domain perpendicular alignment-type pixel structure (multi-domain verticala lignment pixel structure) of first embodiment of the invention, and Fig. 3 A to Fig. 3 D is the local top view of manufacturing process of the multi-domain perpendicular alignment-type pixel structure of first embodiment of the invention.Please, at first, provide a substrate 202, and on substrate 202, form a grid 203g earlier with reference to Fig. 2 A and Fig. 3 A.Generally speaking, when forming grid 203g, can share distribution (common line) 203c by form one scan line 203a, one first capacitance electrode (capacitor electrode) 203b and one in the lump with masking process.Wherein, sweep trace 203a and grid 203g electrically connect, and the first capacitance electrode 203b and shared wiring 203c electrically connect.
On the practice, grid 203g, sweep trace 203a, the first capacitance electrode 203b and shared wiring 203c can select for use physical vaporous deposition (PVD, Physical Vapor Deposition) deposit metallic material on substrate 202.Metal material can be selected low resistance material such as copper, aluminium, molybdenum, chromium, titanium, gold, aluminium alloy or molybdenum alloy for use.Then, this metal material is carried out patterning, can finish the making of grid 203g, sweep trace 203a, the first capacitance electrode 203b and shared wiring 203c by one masking process.Then, on substrate 202, form an insulation course (insulation layer) 204, with cover grid 203g, sweep trace 203a, the first capacitance electrode 203b and shared wiring 203c.The material of above-mentioned insulation course 204 can be selected silicon nitride (SiN) for use or be the monox (SiO) that reacting gas source forms with tetraethoxysilane (TEOS).In Fig. 3 A, omitted illustrating of insulation course 204 for convenience of description.
Then please refer to Fig. 2 B and Fig. 3 B, form a channel layer 205c and semi-conductor layer 205a on insulation course 204, wherein channel layer 205c is positioned on the insulation course 204 of grid 203g top.Generally speaking, the material of channel layer 205c and semiconductor layer 205a can be selected amorphous silicon for use.
On the other hand, descend, more can on channel layer 205c surface, form ohmic contact layer 206a in order to make the contact impedance between channel layer 205c and the metal material.In detail, can be prior to the amorphous silicon layer in this way of comprehensive landform precedent on the insulation course 204.Then, a comprehensive landform precedent N type doped amorphous silicon layer in this way on amorphous silicon layer.Afterwards, simultaneously amorphous silicon layer and N type doped amorphous silicon layer are carried out patterning by one masking process, can form channel layer 205c, ohmic contact layer 206a, semiconductor layer 205a in the lump and be positioned at N type doped amorphous silicon layer 206b on the semiconductor layer 205a.Here be noted that the visual arts demand of shape and position that semiconductor layer 205a shown in Fig. 2 B and N type doped amorphous silicon layer 206b present and suitably adjust in Fig. 3 B, at this only for explanation and be not intended to limitation.
Please refer to Fig. 2 C and Fig. 3 C afterwards, form one source pole 208s, drain electrode 208d, a capacitive coupling electrode (capacitor-coupling electrode) 208a and one second a capacitance electrode 208b.Wherein, source electrode 208s and drain electrode 208d are positioned on the channel layer 205c, and lay respectively at the both sides of grid 203g.Shown in Fig. 2 C, the second capacitance electrode 208b is formed on the insulation course 204 of first capacitance electrode 203b top, to constitute a reservior capacitor (storage capacitor) Cst with the first capacitance electrode 203b.By Fig. 3 C as can be known, capacitive coupling electrode 208a electrically connects with the second capacitance electrode 208b and is identical rete, and the second capacitance electrode 208b can electrically connect with drain electrode 208d.
Generally speaking, when forming source electrode 208s, drain electrode 208d, capacitive coupling electrode 208a and the second capacitance electrode 208b, can form a data line 208 in the lump.Wherein, data line 208 electrically connects with source electrode 208s and is identical rete.Above-mentioned grid 203g, channel layer 205c, ohmic contact layer 206a, source electrode 208s just can constitute an active member 210 with drain electrode 208d.
In detail, data line 208, source electrode 208s, drain electrode 208d, capacitive coupling electrode 208a and the second capacitance electrode 208b can select for use physical vaporous deposition blanket-deposited metal material on insulation course 204.Then, this metal material is carried out patterning, can finish the making of source electrode 208s, drain electrode 208d, data line 208, capacitive coupling electrode 208a and the second capacitance electrode 208b by one masking process.When forming source electrode 208s with drain electrode 208d, the ohmic contact layer 206a of part and the channel layer 205c of part can be removed.In addition, the N type doped amorphous silicon layer 206b (shown in Fig. 2 B) that is positioned on the semiconductor layer 205a also can remove in the lump.Please continue C, on substrate 202, form a protective seam 220, to cover the channel layer 205c and the semiconductor layer 205a of source electrode 208s, drain electrode 208d, part with reference to Fig. 2.Generally speaking, the material of protective seam 220 can be selected monox (SiO), silicon nitride (SiN), silicon oxynitride (SiON) or polyimide (polyimide) for use.
Then please refer to Fig. 2 D, in protective seam 220, form a contact window C2 exposing drain electrode 208d, and in protective seam 220 and insulation course 204, form an irrigation canals and ditches T2 and and be positioned at lateral erosion groove S on the irrigation canals and ditches T2 sidewall.Specifically, lateral erosion groove S exposes the lateral margin of semiconductor layer 205a.The formation method of above-mentioned irrigation canals and ditches T2 and lateral erosion groove S can comprise the protective seam 220 that uses an etching technics to remove part, the semiconductor layer 205a and the partial insulating layer 204 of part.Here be noted that etching technics is higher than etching technics for the etching rate of protective seam 220 with insulation course 204 for the etching rate of semiconductor layer 205a.Therefore, most semiconductor layer 205a can remove effectively, and then forms lateral erosion groove S.
Please refer to Fig. 2 E and Fig. 3 D afterwards, on the protective seam 220 of irrigation canals and ditches T2 both sides, form one first pixel electrode 230a and one second pixel electrode 230b respectively.Wherein, the first pixel electrode 230a electrically connects with drain electrode 208d by contact window C2, and the second pixel electrode 230b is positioned at capacitive coupling electrode 208a top.Here be stressed that the second pixel electrode 230b can be electrically insulated with the first pixel electrode 230a effectively.So far above-mentioned, multi-domain perpendicular alignment-type pixel structure 200 of the present invention roughly completes.
Owing to be formed with a lateral erosion groove S on the sidewall of irrigation canals and ditches T2, even be used for forming on the sidewall that the material of the first pixel electrode 230a and the second pixel electrode 230b residues in irrigation canals and ditches T2 and bottom (shown in 2E figure), the first pixel electrode 230a and the second pixel electrode 230b can guarantee to be electrically insulated each other by the obstruct of lateral erosion groove S.Therefore, the manufacture method of multi-domain perpendicular alignment-type pixel structure of the present invention can effectively promote process yield.
With the formed multi-domain perpendicular alignment-type pixel structure 200 of said method shown in Fig. 2 E and Fig. 3 D.Multi-domain perpendicular alignment-type pixel structure 200 of the present invention is made of active member 210, protective seam 220, the first pixel electrode 230a, the second pixel electrode 230b, semiconductor layer 205a and capacitive coupling electrode 208a.Wherein, active member 210 is disposed on the substrate 202, and electrically connects with sweep trace 203a and data line 208.Certainly, have in the affiliated technical field and know that usually the knowledgeable should know that the layout (lay out) of the active member 210 shown in Fig. 3 D also can be other type, also be not intended to limitation at this.
In detail, active member 210 can be the structure of bottom-gate (bottom gate), and it has one and extends to the active member 210 outer also insulation courses 204 of covered substrate 202, and protective seam 220 covers active members 210 and partial insulating layer 204.Active member 210 of the present invention more comprises an ohmic contact layer 206a, and it is disposed between channel layer 205c and source electrode 208s and channel layer 205c and the drain electrode 208d.
In addition, the first pixel electrode 230a and the second pixel electrode 230b all are disposed on the protective seam 220.Wherein, the first pixel electrode 230a electrically connects by contact window C2 and active member 210, and the second pixel electrode 230b and the first pixel electrode 230a are electrically insulated.On the practice, switching signal can be opened active member 210 by the transmission of sweep trace 203a, and after active member 210 was opened, shows signal can be transmitted among the first pixel electrode 230a by data line 208 and active member 210.In addition, capacitive coupling electrode 208a is disposed between the second pixel electrode 230b and the substrate 202, and capacitive coupling electrode 208a and active member 210 electric connections.
Shown in Fig. 2 E; above-mentioned semiconductor layer 205a is disposed between insulation course 204 and the protective seam 220; wherein insulation course 204 and protective seam 220 have an irrigation canals and ditches T2 and and are positioned at lateral erosion groove S on the irrigation canals and ditches T2 sidewall, and lateral erosion groove S exposes the lateral margin of semiconductor layer 205a.What will specify here is that the semiconductor layer 205a that is positioned at lateral erosion groove S also can be the lateral erosion material layer of other kind.Using under the situation of identical etching agent,, painstakingly do not limiting to one at this and be decided to be semiconductor material as long as this lateral erosion material layer has the etching rate more higher than insulation course 204 and protective seam 220.
Multi-domain perpendicular alignment-type pixel structure 200 of the present invention also can comprise the reservior capacitor Cst that is disposed on the substrate 202.In detail, reservior capacitor Cst can comprise one first capacitance electrode 203b and one second capacitance electrode 208b.Wherein, the first capacitance electrode 203b is disposed on the substrate 202, and the second capacitance electrode 208b is disposed on the insulation course 204 of first capacitance electrode 203b top.In addition, reservior capacitor Cs t can electrically connect with active member 210 by the second capacitance electrode 208b.On the other hand, the capacitive coupling electrode 208a between insulation course 204 and protective seam 220 can pass through the second capacitance electrode 208b, and electrically connects with active member 210.
Second embodiment
Second embodiment and first embodiment are similar, both are the main difference part: present embodiment is by adjusting the relative position of formation irrigation canals and ditches T2 of institute and semiconductor layer 205a, so that lateral erosion groove S only is formed on the sidewall of the irrigation canals and ditches T2 that is close to the first pixel electrode 230a, shown in Fig. 4 A.
Please refer to Fig. 4 B then, on the protective seam 220 of irrigation canals and ditches T2 both sides, form the first pixel electrode 230a and the second pixel electrode 230b respectively, and then can finish multi-domain perpendicular alignment-type pixel structure 300 of the present invention.The first pixel electrode 230a and the second pixel electrode 230b can more can guarantee to be electrically insulated each other equally by the obstruct of lateral erosion groove S in the multi-domain perpendicular alignment-type pixel structure 300 of the present invention.Even be used for forming on the sidewall that the material of the first pixel electrode 230a and the second pixel electrode 230b residues in irrigation canals and ditches T2 and bottom (shown in Fig. 4 B), the first pixel electrode 230a and the second pixel electrode 230b still can guarantee to be electrically insulated each other by the obstruct of lateral erosion groove S.
The 3rd embodiment
The 3rd embodiment and first embodiment are similar, both are the main difference part: present embodiment is by adjusting the relative position of formation irrigation canals and ditches T2 of institute and semiconductor layer 205a, so that lateral erosion groove S only is formed on the sidewall of the irrigation canals and ditches T2 that is close to the second pixel electrode 203a, shown in Fig. 5 A.
Please refer to Fig. 5 B then, on the protective seam 220 of irrigation canals and ditches T2 both sides, form the first pixel electrode 230a and the second pixel electrode 230b respectively, and then can finish multi-domain perpendicular alignment-type pixel structure 400 of the present invention.The first pixel electrode 230a and the second pixel electrode 230b can guarantee to be electrically insulated each other equally by the obstruct of lateral erosion groove S in the multi-domain perpendicular alignment-type pixel structure 400 of the present invention.
In sum, because the manufacture method of multi-domain perpendicular alignment-type pixel structure of the present invention forms the lateral erosion groove on the sidewall of irrigation canals and ditches.Therefore, when making first pixel electrode and second pixel electrode, can guarantee that effectively first pixel electrode and second pixel electrode are electrically insulated mutually, and then improve process yield by the obstruct of lateral erosion groove.Therefore, by the formed multi-domain perpendicular alignment-type pixel structure of manufacture method of the present invention good fiduciary level can be arranged.
Above embodiment only is used to illustrate the present invention, but not is used to limit the present invention.
Claims (20)
1. a multi-domain perpendicular alignment-type pixel structure is suitable for being disposed on the substrate, it is characterized in that, described multi-domain perpendicular alignment-type pixel structure comprises:
One active member is disposed on the described substrate, and wherein said active member has an insulation course, and it is outer and cover described substrate that described insulation course extends to described active member;
One protective seam covers described active member and described insulation course partly;
One first pixel electrode is disposed on the described protective seam, and electrically connects with described active member;
One second pixel electrode is disposed on the described protective seam, and is electrically insulated with described first pixel electrode;
One capacitive coupling electrode is disposed between described second pixel electrode and the substrate, and wherein said capacitive coupling electrode and active member electrically connect; And
Semi-conductor layer is disposed between described insulation course and the protective seam, and wherein said insulation course and protective seam have irrigation canals and ditches and and be positioned at lateral erosion groove on the sidewall of described irrigation canals and ditches, and described lateral erosion groove exposes the lateral margin of described semiconductor layer.
2. multi-domain perpendicular alignment-type pixel structure according to claim 1 is characterized in that, described lateral erosion groove is positioned on the sidewall of the irrigation canals and ditches that are close to described first pixel electrode.
3. multi-domain perpendicular alignment-type pixel structure according to claim 2 is characterized in that, described lateral erosion groove also is positioned on the sidewall of the irrigation canals and ditches that are close to described second pixel electrode.
4. multi-domain perpendicular alignment-type pixel structure according to claim 1 is characterized in that, described lateral erosion groove is positioned on the sidewall of the irrigation canals and ditches that are close to described second pixel electrode.
5. multi-domain perpendicular alignment-type pixel structure according to claim 1 is characterized in that described semiconductor layer comprises amorphous silicon layer.
6. multi-domain perpendicular alignment-type pixel structure according to claim 1 is characterized in that, also comprises a reservior capacitor, is disposed on the described substrate, and wherein said reservior capacitor and described active member electrically connect.
7. multi-domain perpendicular alignment-type pixel structure according to claim 6 is characterized in that, described reservior capacitor comprises:
One first capacitance electrode is disposed on the described substrate, and described insulation course covers first capacitance electrode; And
One second capacitance electrode is disposed on the described insulation course of described first capacitance electrode top, and electrically connects with described active member.
8. multi-domain perpendicular alignment-type pixel structure according to claim 7 is characterized in that, described capacitive coupling electrode electrically connects by described second capacitance electrode and described active member.
9. multi-domain perpendicular alignment-type pixel structure according to claim 1 is characterized in that described capacitive coupling electrode is between described insulation course and protective seam.
10. multi-domain perpendicular alignment-type pixel structure according to claim 1 is characterized in that, described active member also comprises:
One grid is disposed on the described substrate, and wherein said insulation course covers described grid;
One channel layer is disposed on the described insulation course of described grid top; And
One source pole and drain electrode are disposed on the described channel layer, and wherein said source electrode and drain electrode are positioned at the both sides of grid.
11. multi-domain perpendicular alignment-type pixel structure according to claim 10 is characterized in that, described active member also comprises an ohmic contact layer, is disposed between described channel layer and described source electrode and the drain electrode.
12. the manufacture method of a multi-domain perpendicular alignment-type pixel structure is characterized in that, comprising:
One substrate is provided;
On described substrate, form a grid;
On described substrate, form an insulation course, to cover described grid;
Form a channel layer and semi-conductor layer on described insulation course, wherein said channel layer is positioned at described grid top;
Form one source pole and a drain electrode and a capacitive coupling electrode, wherein said source electrode and drain electrode are positioned on the described channel layer, and lay respectively at the both sides of described grid;
On described substrate, form a protective seam, to cover the described channel layer and the described semiconductor layer of described source electrode and drain electrode, part;
In described protective seam, form a contact window exposing described drain electrode, and formation one irrigation canals and ditches and are positioned at lateral erosion groove on the sidewall of described irrigation canals and ditches in described protective seam and insulation course, so that described lateral erosion groove exposes the lateral margin of described semiconductor layer; And
On the described protective seam of described irrigation canals and ditches both sides, form one first pixel electrode and one second pixel electrode respectively; wherein said first pixel electrode electrically connects by described contact window and described drain electrode; and described second pixel electrode is positioned at described capacitive coupling electrode top, and is electrically insulated with described first pixel electrode.
13. the manufacture method of multi-domain perpendicular alignment-type pixel structure according to claim 12; it is characterized in that; the formation method of described irrigation canals and ditches comprises the described protective seam that uses an etching agent to remove part, the described semiconductor layer of part and the described insulation course of part, and described etching agent is higher than the etching rate of described etching agent for described protective seam and insulation course for the etching rate of described semiconductor layer.
14. the manufacture method of multi-domain perpendicular alignment-type pixel structure according to claim 12 is characterized in that, also is included in to form a reservior capacitor on the described substrate, and described reservior capacitor and described drain electrode electric connection.
15. the manufacture method of multi-domain perpendicular alignment-type pixel structure according to claim 14 is characterized in that, the formation method of described reservior capacitor comprises:
Form one first capacitance electrode; And
Form one second capacitance electrode in described first capacitance electrode top, wherein said drain electrode and described second capacitance electrode electrically connect.
16. the manufacture method of multi-domain perpendicular alignment-type pixel structure according to claim 15 is characterized in that, described first capacitance electrode and described grid are to form simultaneously, and described second capacitance electrode and described source electrode and drain electrode are to form simultaneously.
17. the manufacture method of multi-domain perpendicular alignment-type pixel structure according to claim 12 is characterized in that, described capacitive coupling electrode and described source electrode and drain electrode are to form simultaneously.
18. the manufacture method of multi-domain perpendicular alignment-type pixel structure according to claim 12 is characterized in that, also is included between described channel layer and described source electrode and the drain electrode and forms an ohmic contact layer.
19. a multi-domain perpendicular alignment-type pixel structure is suitable for being disposed on the substrate, it is characterized in that, described multi-domain perpendicular alignment-type pixel structure comprises:
One active member is disposed on the described substrate;
One dielectric layer is disposed on the described substrate;
One first pixel electrode is disposed on the described dielectric layer, and electrically connects with described active member;
One second pixel electrode is disposed on the described dielectric layer, and is electrically insulated with described first pixel electrode;
One capacitive coupling electrode is disposed between described second pixel electrode and the described substrate, and wherein said capacitive coupling electrode and described active member electrically connect; And
One lateral erosion material layer is disposed in the described dielectric layer, and wherein said dielectric layer has irrigation canals and ditches and and is positioned at lateral erosion groove on the sidewall of described irrigation canals and ditches, and described lateral erosion groove exposes the lateral margin of described lateral erosion material layer.
20. the manufacture method of a multi-domain perpendicular alignment-type pixel structure is characterized in that, comprising:
One substrate is provided;
Form an active member, a dielectric layer, a capacitive coupling electrode and a lateral erosion material layer on described substrate, wherein said capacitive coupling electrode and described lateral erosion material layer are positioned at described dielectric layer;
In described dielectric layer, form lateral erosion groove on the sidewall that a contact window, irrigation canals and ditches and be positioned at described irrigation canals and ditches, so that described lateral erosion groove exposes the lateral margin of described lateral erosion material layer; And
On the described dielectric layer of described irrigation canals and ditches both sides, form one first pixel electrode and one second pixel electrode respectively, wherein said first pixel electrode electrically connects by described contact window and described active member, and described second pixel electrode and described first pixel electrode are electrically insulated, and are positioned at described capacitive coupling electrode top.
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| CNB200610143119XA CN100435011C (en) | 2006-11-01 | 2006-11-01 | Multiple domain vertical alignment pixel and its producing method |
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| CNB200610143119XA CN100435011C (en) | 2006-11-01 | 2006-11-01 | Multiple domain vertical alignment pixel and its producing method |
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| CN100435011C true CN100435011C (en) | 2008-11-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1544986A (en) * | 2003-11-24 | 2004-11-10 | 友达光电股份有限公司 | Contrast and reaction speed promoted multi-domain perpendicular direction matching transistor liquid crystal display |
| CN1544985A (en) * | 2003-11-25 | 2004-11-10 | 友达光电股份有限公司 | Uniform multi-domain perpendicular direction matching half penetrative half reflex thin film transistor liquid crystal display |
| US20060066795A1 (en) * | 2004-09-30 | 2006-03-30 | Che-Ming Hsu | Display having structures to regulate orientation of liquid crystal molecules |
| CN1766721A (en) * | 2004-10-27 | 2006-05-03 | 鸿富锦精密工业（深圳）有限公司 | Multidomain vertical orientation formula liquid crystal indicator |
| JP2006293189A (en) * | 2005-04-14 | 2006-10-26 | Dainippon Printing Co Ltd | Method for manufacturing color filter, and liquid crystal display apparatus |
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- 2006-11-01 CN CNB200610143119XA patent/CN100435011C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1544986A (en) * | 2003-11-24 | 2004-11-10 | 友达光电股份有限公司 | Contrast and reaction speed promoted multi-domain perpendicular direction matching transistor liquid crystal display |
| CN1544985A (en) * | 2003-11-25 | 2004-11-10 | 友达光电股份有限公司 | Uniform multi-domain perpendicular direction matching half penetrative half reflex thin film transistor liquid crystal display |
| US20060066795A1 (en) * | 2004-09-30 | 2006-03-30 | Che-Ming Hsu | Display having structures to regulate orientation of liquid crystal molecules |
| CN1766721A (en) * | 2004-10-27 | 2006-05-03 | 鸿富锦精密工业（深圳）有限公司 | Multidomain vertical orientation formula liquid crystal indicator |
| JP2006293189A (en) * | 2005-04-14 | 2006-10-26 | Dainippon Printing Co Ltd | Method for manufacturing color filter, and liquid crystal display apparatus |
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Effective date of registration: 20240117 Address after: 825 Waterscreek Avenue, Unit 250, Allen, Texas 75013, USA Patentee after: Optoelectronic Science Co.,Ltd. Address before: Hsinchu City, Taiwan, China Patentee before: AU OPTRONICS Corp. |