CN100428367C - Aluminum alloy wiring material having high resistance to heat and target material - Google Patents

Aluminum alloy wiring material having high resistance to heat and target material Download PDF

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CN100428367C
CN100428367C CNB2005800003386A CN200580000338A CN100428367C CN 100428367 C CN100428367 C CN 100428367C CN B2005800003386 A CNB2005800003386 A CN B2005800003386A CN 200580000338 A CN200580000338 A CN 200580000338A CN 100428367 C CN100428367 C CN 100428367C
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wiring material
heat treatment
cobalt
heat
nickel
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CN1788322A (en
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久保田高史
松浦宜範
松崎健嗣
加藤和照
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Mitsui Mining and Smelting Co Ltd
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Mitsui Mining and Smelting Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/023—Alloys based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53214—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H01L23/53219—Aluminium alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern

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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
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  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Conductive Materials (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

To provide an aluminum alloy wiring material which is excellent both in high heat resistance and low electric resistance characteristics and thus is suitable for a low temperature process poly-Si THT being subjected to a heat treatment at a relatively high temperature of 500 DEG C or higher, and a target material for the wiring material. An aluminum alloy wiring material and a target material which contain nickel, cobalt and carbon, characterized in that it has a chemical composition, wherein the formulae: 0.5 at % <= X <= 3.0 at %, 4.0 at % <= X + Y <= 7.0 at %, and 0.1 at % <= Z <= 0.5 at % are satisfied, where X at % represents a nickel content in an atomic percentage, Y at % represents a cobalt content in an atomic percentage, and Z at % represents a carbon content in an atomic percentage, and the balance is aluminum.

Description

Aluminum alloy wiring material having high resistance to heat
Technical field
The present invention relates to constitute the aluminium alloy wiring material of film distribution, the electrode of LCD, distribution of semiconductor integrated circuit etc., relate in particular to the polycrystalline SiTFT that is applicable to the low temperature process of carrying out the high-temperature heat treatment more than 500 ℃ aluminium alloy wiring material (Polycrystalline-Silicon Thin Film Transistors), that height is heat-resisting and low resistance characteristic is good.
Background technology
In recent years, the LCD display unit of cathode-ray picture tube (CRT) as an alternative is widely used, electronic equipment as notebook computer and mobile phone is comparatively typically arranged, the progress that the big pictureization of LCD, high-definition have highly significant.And, in the field of LCD,, also strict more for the requirement of the characteristic of such LCD to the rush of demand of thin-film transistor (Thin Film Transistor is hereinafter to be referred as TFT) class LCD.Especially, along with big pictureization, the high-definition of LCD, need the low wiring material of resistivity.The requirement of this electrical resistivity property is in order to prevent signal delay when the long linearize of carrying out distribution and the graph thinning.
As one of Drive Structure of such LCD, known have a driven with active matrix element, and this active element has so-called uncrystalline silicon TFT (Amorphous Silicon Thin Film Transistors) and multi-crystal TFT.Uncrystalline silicon TFT is used to adopt so-called TAB mode (the automatic bonding method of belt, the LCD of big relatively picture Tape AutomatedBonding), though, have the advantage that to make at an easy rate aspect the electron mobility of uncrystalline silicon, processing speed, having restriction.In addition, multi-crystal TFT is used to adopt so-called COF (membrane of flip chip, Chip on Film) LCD of the small-sized relatively picture of mode, owing to constitute by polysilicon, so compare with uncrystalline silicon and can have nearly 100 times electron mobility, be applicable to high definition high apertureization, high-quality high image quality, be used to mobile phone and PDA small-sized pictures such as (PersonalDigital (Data) Assistants).
In addition, find that the continuous trend that increases of display area of nearest LCD is obvious, in the electronic equipment as personal information terminals such as mobile phone and PDA, this tendency also clearly.Therefore, need in multi-crystal TFT, tackle the technology of big pictureization.
All the time, in multi-crystal TFT, known use is carried out the high temperature process TFT of nearly 1000 ℃ of heat treated quartz base plates and is used these 2 types of low temperature process TFT carrying out 450 ℃～600 ℃ of heat treated glass substrates.And, in the electronic equipment that requires low price that image drift mobile phone and PDA are such, adopt the low temperature process multi-crystal TFT that uses cheap glass substrate mostly, about this low temperature process multi-crystal TFT, to solve following problem earlier for the wiring material that is used for it.
In the low temperature process multi-crystal TFT, owing to carry out 450 ℃～600 ℃ high temperature heat treatment down, so its wiring material must possess high heat-resistant quality, high-melting-point wiring materials such as therefore main use Mo, Ta, Cr.High-melting-point wiring materials such as this class Mo also can be realized stable heat-resistant quality (non-patent literature 1) for 450 ℃～600 ℃ heat treatment.
Non-patent literature 1: this positive work of pine, " LCD Technology ", industry books Co., Ltd. distribution, June 18 calendar year 2001 the third printing, P.115-118
Yet,, have the bigger character of resistance value that wiring material itself has though the high heat-resistant qualities of high-melting-point wiring material such as Mo, Ta, Cr are good.But in the little small-sized picture of area, distribution is narrow and wiring distance short, so even the high-melting-point wiring material of high resistance, signal delay does not reach the actual degree of using of influence., if display frame increases,,, become the obstacle of the big pictureization of multi-crystal TFT so when using the high wiring material of resistivity, may produce signal delay then because wiring distance is elongated.
The announcement of invention
Invention will solve problem
The present invention finishes under the background based on above-mentioned situation, the wiring material that can adapt to the heat treatment under the such high temperature of multi-crystal TFT and satisfy the low-resistivity characteristic is provided, more specifically, its purpose be to provide the polycrystalline SiTFT that is applicable to the low temperature process of carrying out the high-temperature heat treatment more than 500 ℃, possess the aluminium alloy wiring material of high heat-resisting and low-resistivity characteristic and form its target.
Solve the method for problem
In order to solve above-mentioned problem, after the inventor conscientiously studies the aluminium alloy wiring material (referring to Patent Document 1) that proposes in the past, found that the high-temperature heat-resistance characteristic that possesses more than 500 ℃, the aluminium alloy composition of low-resistivity, expected the present invention.
Patent documentation 1: the Japan Patent spy opens the 2003-089864 communique
It is generally acknowledged that the wiring material that uses aluminium alloy is at the good electrical resistivity property that has under 300 ℃ the heat treatment below the 10 μ Ω cm, but the use under the high-temperature heat treatment more than 400 ℃ is very difficult.Especially, under the situation of the high-temperature heat treatment more than 500 ℃, possibly can't avoid in the aluminium alloy wiring material generation of hillock (strumae that results from the distribution surface that heat treatment causes), exist in the background that does not adopt aluminium alloy in the wiring material of TFT purposes of the high-temperature heat treatment of carrying out more than 500 ℃ as far as possible.But, the inventor further discovers the composition of the aluminium alloy (patent documentation 1) of proposition, if the aluminium alloy that contains nickel, cobalt, carbon is adjusted the content of these 3 kinds of elements, can realize possessing the high-fire resistance more than 500 ℃, in 300 ℃ the heat treatment below the resistivity value 10 μ Ω cm.
The present invention is the aluminium alloy wiring material that contains nickel, cobalt, carbon, it is characterized in that, the atomic percent of supposing nickel content is X at%, the atomic percent of cobalt content is Y at%, the atomic percent of carbon content is Z at%, then satisfy the condition of 0.5at%≤X≤3.0at%, 4.0at%≤X+Y≤7.0at%, 0.1at%≤Z≤0.5at%, all the other are made of aluminium.
Aluminum alloy wiring material having high resistance to heat of the present invention at first by making the carbon that contains trace in the aluminium, makes the crystalline aluminophosphate particle diameter in the aluminium alloy become meticulous on the whole, during the heat treatment that alleviate to produce hillock for the compression stress of wiring material.And then, contain nickel and cobalt by making it, further realize the raising of heat-resistant quality.
Nickel is by separating out Al from aluminium alloy near 200 ℃ 3Ni is alleviated the compression stress as the reason that produces hillock mutually, and the heat-resistant quality of aluminium alloy self is further improved.The precipitated phase that this nickel produces, under higher temperature, for example be warming up to 400 ℃ near the time, Al 3Ni excessively separates out mutually, begins to produce Al 3The aggegation of Ni phase produces the projection identical with hillock because this phenomenon is confirmed aluminium alloy wiring material surface.In order to prevent near the Al such 400 ℃ 3Excessively separating out of Ni phase contained cobalt in the aluminium alloy wiring material of the present invention.If contain cobalt with nickel in advance, then can prevent near the Al that 400 ℃, begins to produce 3Excessively separating out and its aggegation of Ni phase can be further implemented in the heat-resistant quality of high-temperature region.By the acting in conjunction of such nickel and cobalt, aluminium alloy wiring material of the present invention does not produce hillock yet under the high-temperature heat treatment more than 500 ℃.
In the aluminium alloy wiring material of the present invention, the atomic percent of supposing nickel content is X at%, the atomic percent of cobalt content is Y at%, the atomic percent of carbon content is Z at%, then nickel satisfies 0.5at%≤X≤3.0at%, and the total amount of nickel and cobalt satisfies 4.0at%≤X+Y≤7.0at%.If nickel content is less than 0.5at%, then stable on heating raising is not enough; If surpass 3.0at%, then may balance with cobalt content, it is big that resistivity also may become.In addition, if the total amount of nickel and cobalt then can't adapt to 500 ℃, 1 hour high-temperature heat treatment less than 4.0at%, produce hillock probably; If surpass 7.0at%, then resistivity value becomes big, can't satisfy the following electrical resistivity property of 10 μ Ω cm.And if carbon is less than 0.1at%, then the effect that becomes more meticulous of the crystal grain that produces of carbon reduces, and becoming is easy to generate hillock; If surpass 0.5at%, then compare the effect that crystal grain becomes more meticulous, make the big influence of resistivity change stronger with nickel that contains and cobalt.
In addition, research according to the inventor, in the scope of above-mentioned composition, the content of nickel, cobalt, carbon further satisfies under the situation of condition of 1.5at%≤X≤2.5at%, 2.0at%≤Y≤5.0at%, 0.1at%≤Z≤0.3at%, and discovery can obtain possessing 550 ℃, the aluminum alloy wiring material having high resistance to heat of the about 5 μ Ω cm of resistivity behind 1 hour the high-fire resistance, 300 ℃ heat treatment.
Aluminium alloy wiring material of the present invention possesses the high-fire resistance more than 500 ℃ as mentioned above, and resistivity value is low, so be suitable as very much the wiring material of the formation low temperature process multi-crystal TFT that did not adopt in the past.Especially, with the multi-crystal TFT manufacturing during than the LCD of big picture in the past, if aluminium alloy wiring material of the present invention is then because resistivity is little, so also do not have the signal delay of the long distanceization generation of distribution.
In order to obtain above-mentioned aluminium alloy wiring material of the present invention, the atomic percent that better is employing hypothesis nickel content is X at%, the atomic percent of cobalt content is Y at%, the atomic percent of carbon content is Z at%, then satisfy the condition of 0.5at%≤X≤3.0at%, 4.0at%≤X+Y≤7.0at%, 0.1at%≤Z≤0.5at%, the target that all the other are made of aluminium.In addition, if possess 550 ℃, 1 hour high-fire resistance, the aluminum alloy wiring material having high resistance to heat of the about 5 μ Ω cm of resistivity after 300 ℃ the heat treatment, then better be to adopt the content of nickel, cobalt, carbon to satisfy the target of 1.5at%≤X≤2.5at%, 2.0at%≤Y≤5.0at%, 0.1at%≤Z≤0.3at%.If use the target of such composition,, but still can easily form aluminum alloy films with the basic identical composition of target by sputtering method though some that also are subjected to membrance casting condition influence.
The simple declaration of accompanying drawing
The schematic diagram of the total content of [Fig. 1] nickel and cobalt and the relation of resistivity value.
The schematic diagram of the content of [Fig. 2] cobalt and the relation of resistivity value.
The schematic diagram of the relation of heat treatment temperature and resistivity value among [Fig. 3] embodiment 3,5,6.
The SEM of the as-depo state of [Fig. 4] comparative example 6 observes photo.
SEM after 350 ℃ * 1 hour the heat treatment of [Fig. 5] comparative example 6 observes photo.
SEM after 400 ℃ * 1 hour the heat treatment of [Fig. 6] comparative example 6 observes photo.
SEM after 450 ℃ * 1 hour the heat treatment of [Fig. 7] comparative example 6 observes photo.
SEM after 500 ℃ * 1 hour the heat treatment of [Fig. 8] comparative example 6 observes photo.
The SEM of the as-depo state of [Fig. 9] embodiment 8 observes photo.
SEM after 350 ℃ * 1 hour the heat treatment of [Figure 10] embodiment 8 observes photo.
SEM after 400 ℃ * 1 hour the heat treatment of [Figure 11] embodiment 8 observes photo.
SEM after 450 ℃ * 1 hour the heat treatment of [Figure 12] embodiment 8 observes photo.
SEM after 500 ℃ * 1 hour the heat treatment of [Figure 13] embodiment 8 observes photo.
The schematic diagram of the scope of the effective content of [Figure 14] nickel and cobalt.
The best mode that carries out an invention
Describe based on embodiment and comparative example implementing best mode of the present invention.
At first, the manufacture method to aluminium alloy wiring material of the present invention describes.Aluminium alloy wiring material in the present embodiment is estimated based on the aluminum alloy films that the target that obtains with the manufacturing process with following explanation forms.
At first, the aluminium input graphite crucible (purity 99.9%) with purity 99.99% heats fusion aluminium in 1600～2500 ℃ temperature range.The aluminium of this graphite crucible is dissolved in the argon gas atmosphere (atmospheric pressure) and carries out.Kept about 5 minutes with this melting temperature, in graphite crucible, behind the generation aluminum-carbon alloy, this fused solution is dropped in graphite casting mould, cast by placing natural cooling.
The aluminum-carbon alloy ingot bar that taking-up is cast in this graphite casting mould, the nickel and the cobalt of adding specified amount drop into and fuse in the graphite crucible of usefulness again, by fuse stir about 1 minute again 800～900 ℃ of heating.This fuses also again in argon gas atmosphere, atmosphere pressures is to carry out under the atmospheric condition.After the stirring,, obtain the aluminium alloy ingot bar of designated shape by fused solution being injected the water-cooled copper casting mold.Then, this ingot bar is rolled processing, be processed into the shape of appointment, obtain target.The size of final target is 8 inches of φ (about 200mm) * thick 6mm.Make the target of various compositions by above-mentioned manufacture method, form the aluminum alloy films as the aluminium alloy wiring material of each embodiment, comparative example, estimate its characteristic with following sputtering condition.
Film forming sputtering condition is that the コ one ニ Application グ corporate system #1737 glass plate that uses thick 0.8mm is as substrate, 3 watts/cm of power density 2, argon flow amount 100ccm, argon pressure 0.5Pa, by the vane type magnetic control sputtering device,, on this glass plate, form thick pact with about 60 seconds film formation time
Figure C20058000033800071
The film of (about 0.2 μ m).Substrate temperature is 100～200 ℃.
Electrical resistivity property: at first, the investigation result of the electrical resistivity property of aluminium alloy wiring material of the present invention is described.In table 1, gather the film composition of having represented embodiment 1～4 and comparative example 1～4, the measurement result of resistivity value.
[table 1]
Figure C20058000033800072
During each film shown in the table 1 is formed, nickel, cobalt with ICP luminesceence analysis (inductively coupled plasma emission spectroanalysis method), are carried out quantitatively with the carbon analytical equipment carbon.In addition, resistivity value is measured (measuring electric current 100mA) by 4 terminal resistance determinators.(hereinafter to be referred as as-depo, table and accompanying drawing are too) and the glass plate that respectively covers film carried out 300 ℃, the 1 hour value after the heat treatment in a vacuum and measure when this resistivity value had just been finished sputter respectively.Its result is as shown in table 1.
The figure that the resistivity value of expression after with the total content of the cobalt of table 1 and nickel and 300 ℃ of heat treatment done among Fig. 1.In addition, the figure that the resistivity value of expression after with the content of cobalt and as-depo and 300 ℃ of heat treatment done among Fig. 2.In each plot point of Fig. 1 and Fig. 2, for example the result with embodiment 1 remembers work " real 1 " in the drawings.In addition, the plot point of blacking is the resistivity value of as-depo among Fig. 2, and hollow plot point is represented 300 ℃ of resistivity values after the heat treatment.
As shown in Figure 1, along with the increase of the total content of nickel and cobalt, the resistivity value after 300 ℃ of heat treatment also increases on year-on-year basis.From this Fig. 1 as can be known, in order to make 300 ℃ of resistivity values after the heat treatment below 10 μ Ω cm, the total content of nickel and cobalt must be below 7.0at%.
In addition, among the plotting result according to the resistivity value of as-depo among Fig. 2, find the nickel content of each embodiment and irregular, but the resistivity value of as-depo increases along with the increase of cobalt content.This supposition is because the resistance value of cobalt itself causes greatly.On the other hand, in the resistivity value after 300 ℃ of heat treatment, find with the cobalt content of each embodiment irrelevantly, all realized the following electrical resistivity property of 10 μ Ω cm.Can know by inference by this result, cobalt is when nickel and carbon solid solution are in aluminium alloy, though resistivity value has the trend that rises along with the increase of cobalt content, if begin mutually to separate out because of heat treatment aluminium-nickel-cobalt alloy, then alloy substrate becomes the phase of rich aluminium, so resistivity decreased is below 10 μ Ω cm.
Then, the investigation result about the relation of resistivity value and heat treatment temperature (annealing temperature) is described.Among Fig. 3, the result that expression is measured for the resistivity value of embodiment 2～4 after carrying out 1 hour heat treatment under each temperature of 200 ℃～500 ℃ (50 ℃ at interval).By this result as can be known, even embodiment 2～4 carries out heat treatment resistivity value more than 300 ℃ also below 10 μ Ω cm.
Heat-resistant quality: then, the result after the evaluation of carrying out heat-resistant quality is described.
The thermal endurance evaluation is investigated the generation situation of hillock and is carried out by observing with sweep electron microscope (10,000 times of SEM) carrying out 1 hour film surface after the heat treatment at each temperature.Among Fig. 4～Figure 13, the typical SEM photo that hillock is observed is carried out in expression.Fig. 4～Fig. 8 represents to consist of the situation of Al-3.0at%Ni-0.1at%C (table 2 comparative example 6), and Fig. 9～Figure 13 represents to consist of the situation of Al-2.1at%Ni-2.9at%Co-0.21at%C (table 2 embodiment 8).
By Fig. 4～Fig. 8 as can be known, the aluminum alloy films that does not contain cobalt is after carrying out 450 ℃, 500 ℃ heat treatment, and the surface produces the thrust of white.Under the heat treated situation of 350 ℃ (Fig. 5) and 400 ℃ (Fig. 6), the zone of leukasmus point-like is found on the surface, but does not form thrust.Fig. 5 and mottled zone seen in fig. 6 are Al 3The precipitated phase of Ni, Fig. 7 and white thrust seen in fig. 8 are the Al that separates out 3Form on the surface after the aggegation of Ni phase.Can see the depressed part as dimple opposite on the surface of Fig. 8, infer that this is Al with white thrust 3Its peripheral volume reduces to form after the aggegation of Ni phase.On the other hand, among the embodiment 8, do not find any variation in the heat treatment of 350 ℃ (Figure 10), 400 ℃ (Figure 11).In addition, in the heat treatment of 450 ℃ (Figure 12), 500 ℃ (Figure 13), though find the Al of leukasmus point-like 3The Ni phase, but do not form thrust.
Illustrated in the table 2 for the film of each composition carry out each temperature heat treatment, SEM is carried out on its surface observe, investigate and have or not the result who produces hillock.In the table 2, the note work of generation hillock *, the note that does not have hillock to produce fully does zero.In addition, not finding has hillock to produce, but because of Al 3The aggegation of Ni phase is made △ in the note of the depressed part of surface discovery as the dimple.In this was estimated, the hillock of generation was except the projection of aluminium itself, also comprised the Al of Fig. 7 and aggegation shown in Figure 8 3The thrust of Ni phase.
[table 2]
As shown in Table 2, as comparative example 5,6, do not contain the aluminum alloy films of cobalt, find to produce hillock by the heat treatment more than 450 ℃.In addition,,,, find to produce hillock, perhaps Al occurs on the surface to the heat treatment more than 500 ℃ for the composition beyond the compositing range of aluminium alloy wiring material of the present invention as comparative example 7～11 3The depression that the aggegation of Ni phase produces.On the other hand, for embodiment 5～14, even adopt 400～500 ℃ heat treatment also not produce hillock.And each embodiment for do not find to have the hillock generation in 500 ℃ heat treatment implements 550 ℃, 1 hour heat treatment again, carries out the heat-resistant quality evaluation, and the result has not observed hillock fully and produced in the composition of enforcement 7～10.In this heat-resistant quality is estimated, for the composition of total content more than 7.0at% of nickel and cobalt, consider resistivity value more than 10 μ Ω cm by result shown in Figure 1, think not to be practical wiring material, be not included in the evaluation.
Based on the table 1 shown in above and the result of table 2, the research resistivity value is below 10 μ Ω cm and have for the nickel of the heat treated high-fire resistance characteristic more than 500 ℃ and the content range of cobalt, and the result thinks the content range of oblique line part shown in Figure 14.In addition, the zone of grid part is corresponding to the content range that also keeps high-fire resistance in 550 ℃ heat treatment.
Natural potential is measured: last, the measurement result of the natural potential of the described aluminium alloy wiring material of present embodiment is described.On glass substrate, form the film (0.2 μ m) of the composition of embodiment 8, by cutting this glass substrate, with its sample as potential measurement.In addition, in contrast, the film of the composition of comparative example 6 is formed too the sample of potential measurement.Then, add mask, make it expose 1cm at the potential measurement sample surfaces 2Area, form to measure and to use electrode.Natural potential uses 3.5% sodium-chloride water solution (27 ℃ of liquid temperature), and reference electrode uses silver/silver chlorate, measures.In addition, the ITO film of the object that connects as ohm uses In 2O 3-10wt%SnO 2Composition.
Its result, the natural potential of ITO film is-820mV about.And then, confirm that embodiment 8 for pact-960mV, is the natural potential near the ITO film.On the other hand, confirm comparative example 6 be-1080mV about, compare with embodiment 8, differ greatly with the natural potential of ITO film.
The possibility of utilizing on the industry
As mentioned above, adopt the present invention, can obtain having that in the past aluminium alloy wiring material can't realize High heat-resistant quality more than 500 ℃ also realizes the good aluminium alloy wiring material of low-resistivity characteristic. It To form relatively large liquid crystal with the heat treated low temperature process multi-crystal TFT that carries out 400 ℃～650 ℃ When showing device, the aluminium alloy wiring material that especially is suitable for.

Claims (2)

1. aluminum alloy wiring material having high resistance to heat, it is the aluminium alloy wiring material that contains nickel, cobalt, carbon, it is characterized in that,
The atomic percent of nickel content is X at%, and the atomic percent of cobalt content is Y at%, and the atomic percent of carbon content is Z at%, and satisfies
0.5at％≤X≤3.0at％
4.0at％≤X+Y≤7.0at％
0.1at％≤Z≤0.5at％
Relation, all the other are made of aluminium,
Described high-fire resistance is more than 500 ℃.
2. aluminum alloy wiring material having high resistance to heat as claimed in claim 1, its feature also are, are used for the polycrystalline SiTFT of low temperature process.
CNB2005800003386A 2004-02-16 2005-02-15 Aluminum alloy wiring material having high resistance to heat and target material Expired - Fee Related CN100428367C (en)

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JP2004037570A JP4390260B2 (en) 2004-02-16 2004-02-16 High heat resistant aluminum alloy wiring material and target material
JP037570/2004 2004-02-16

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JP2003073810A (en) * 2001-08-31 2003-03-12 Vacuum Metallurgical Co Ltd Thin-film aluminum alloy and sputtering target for forming thin-film aluminum alloy
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JPS5274514A (en) * 1971-06-07 1977-06-22 Southwire Co Conductive alminium alloy
JPS62240739A (en) * 1986-04-11 1987-10-21 Nippon Mining Co Ltd B-, c-, and n-containing aluminum alloy for semiconductor wiring material
JP2003073810A (en) * 2001-08-31 2003-03-12 Vacuum Metallurgical Co Ltd Thin-film aluminum alloy and sputtering target for forming thin-film aluminum alloy
US20040022664A1 (en) * 2001-09-18 2004-02-05 Takashi Kubota Aluminum alloy thin film and wiring circuit having the thin film and target material for forming the tin film

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