CN100423193C - Semiconductor producing method for preventing crystal border film layer from stripping and interconnection wire producing method - Google Patents
Semiconductor producing method for preventing crystal border film layer from stripping and interconnection wire producing method Download PDFInfo
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- CN100423193C CN100423193C CNB2005101039211A CN200510103921A CN100423193C CN 100423193 C CN100423193 C CN 100423193C CN B2005101039211 A CNB2005101039211 A CN B2005101039211A CN 200510103921 A CN200510103921 A CN 200510103921A CN 100423193 C CN100423193 C CN 100423193C
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Abstract
The invention is concerned with the semiconductor manufacture method for preventing crystal-edge area-film flake, it is: forms a dielectric layer on the front of the base; forms a photoetch-resist layer covering on the front and part rear of the base; processes only the wash edge step for the rear of the base in order to remove the photoetch-resist layer on the rear of the base, and reserves the photoetch-resist layer located at the crystal-edge area.
Description
Technical field
The present invention relates to a kind of semiconductor technology, particularly relate to a kind of manufacture method that prevents the semiconductor making method and the intraconnections of crystal border film layer from stripping.
Background technology
In general, when making integrated circuit, use the structure that various technology form the multilayer storehouse, so that different effects to be provided, such as conductive layer, dielectric layer, insulating barrier or be used to increase the adhesion layer of two interlayer adhesive force, also adopt different materials simultaneously so that element reaches best usefulness.
For instance, in prior integrated circuit process, in substrate after the dielectric layer, can on dielectric layer, form one deck photoresist layer earlier, then the side washing step is carried out at the front and the back side of chip respectively, with the photoresist layer of removal crystal edge area, and then with dielectric layer patternization.Afterwards, on dielectric layer, form other rete or carry out follow-up other technology again.
Yet because the photoresist layer on the crystal edge area of substrate front surface is removed, so carry out after the etch process, the dielectric layer that is positioned at crystal edge area also can be removed and expose substrate.The substrate of crystal edge area when carrying out other technology, easily produces defective follow-up, make in the subsequent technique the organic impurities deposition in its surface.When follow-up rete is formed in the substrate, the organic impurities of the crystal edge area generation bubble that easily is heated, and then make rete produce the phenomenon of peeling off (peeling), cause the product damage and can influence machine, make follow-up substrate by the gross impaired, so that the finished product rate significantly reduces.
Summary of the invention
Purpose of the present invention is exactly that a kind of semiconductor making method that prevents crystal border film layer from stripping is being provided, and the substrate of avoiding being arranged in crystal edge area comes out and damaged in technology.
A further object of the present invention is exactly that a kind of manufacture method of intraconnections is being provided, and the rete generation that can avoid being positioned at crystal edge area is peeled off, to keep the rate of finished products of product.
The present invention proposes a kind of semiconductor making method that prevents crystal border film layer from stripping, at first, one substrate is provided, this substrate has the front and the back side, the wherein positive upper surface and the side first half that comprises substrate, and the back side comprises the lower surface and the side Lower Half of substrate, and upper surface has a crystal edge area and a center, and this crystal edge area is around the upper surface outer rim.Then, on the front of substrate, form one dielectric layer.Then, form one deck photoresist layer, this photoresist layer covers front, side Lower Half and the part lower surface of substrate.Afterwards, only the side washing step is carried out at the back side of substrate,, and keep the photoresist layer that is positioned at crystal edge area with the photoresist layer on the back side of removing substrate.
According to the described semiconductor making method that prevents crystal border film layer from stripping of the embodiment of the invention, the width of above-mentioned crystal edge area for example is 5mm.
According to the described semiconductor making method that prevents crystal border film layer from stripping of the embodiment of the invention, the method of above-mentioned formation dielectric layer for example be the high density plasma CVD method (high densityplasma chemical vapor deposition, HDPCVD).
According to the described semiconductor making method that prevents crystal border film layer from stripping of the embodiment of the invention, the material of above-mentioned dielectric layer for example is a silica.
According to the described semiconductor making method that prevents crystal border film layer from stripping of the embodiment of the invention, above-mentioned side washing step for example be edge droplet ablution (edge bead rinse, EBR).
According to the described semiconductor making method that prevents crystal border film layer from stripping of the embodiment of the invention, the method for above-mentioned formation photoresist layer for example is a rotary coating.
The present invention reintroduces a kind of manufacture method of intraconnections, at first, forms one dielectric layer on the front of substrate.Then, form one deck photoresist layer in substrate, this photoresist layer covers front, side Lower Half and the part lower surface of substrate.Next, only the lower surface and the side Lower Half of substrate are carried out the side washing step, with the photoresist layer on the back side of removing substrate.Then,, and carry out etch process,, keep the dielectric layer of the crystal edge area of substrate with dielectric layer patternization with the center of substrate front surface with the photoresist layer patternization.On dielectric layer, form patterning conductor layer afterwards.
The present invention is because of when carrying out side washing (edge rinse) step, only utilize edge droplet ablution (EBR) that the back side of substrate is cleaned, remove the photoresist layer of backside of substrate, and the crystal edge area of substrate front surface is not carried out the side washing step, thus, dielectric layer just can be retained in the substrate of crystal edge area in follow-up technology, make substrate in follow-up technology, can not expose, be deposited on suprabasil phenomenon and produce organic impurities, and then avoid the follow-up rete (as dielectric layer) that produces in crystal edge area to produce and peel off, to keep the rate of finished products of product.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A is the flow chart of steps according to the semiconductor making method that prevents crystal border film layer from stripping that the embodiment of the invention illustrated.
Figure 1B illustrates the top view into wafer.
Fig. 2 A to Fig. 2 C is the flow process profile according to the manufacture method of the intraconnections that the embodiment of the invention illustrated.
The simple symbol explanation
100～106: step
200: substrate
202: upper surface
204: the side first half
206: lower surface
208: the side Lower Half
210: crystal edge area
212: the center
214: grid
216: gate dielectric layer
217: clearance wall
218: source/drain regions
220: dielectric layer
222: the photoresist layer
223: opening
224: conductor layer
Embodiment
Figure 1A is the flow chart of steps according to the semiconductor making method that prevents crystal border film layer from stripping that the embodiment of the invention illustrated.Please refer to Figure 1A, at first, in step 100, provide a substrate, this substrate has the front and the back side, and wherein substrate front surface comprises the upper surface and the side first half of substrate, and backside of substrate comprises the lower surface and the side Lower Half of substrate.In addition, the upper surface of substrate has a crystal edge area, and this crystal edge area is around the outer rim of upper surface of substrate.The width of crystal edge area for example is 5mm.Then, in step 102, on the front of substrate, form one dielectric layer, and cover crystal edge area.The material of dielectric layer for example is a silica, and the formation method for example is the high density plasma CVD method.Then, in step 104, for example to be that the mode of rotary coating forms one deck photoresist layer, this photoresist layer covers front, side Lower Half and the part lower surface of substrate in substrate.Afterwards, in step 106, only the side washing step is carried out at the back side of substrate, with the photoresist layer on the back side of removing substrate, wherein side washing step for example is an edge droplet ablution.In this step, photoresist layer for substrate front surface does not then carry out the side washing step, its purpose is to keep the photoresist layer that is positioned on the crystal edge area, and with the photoresist layer pattern time, the photoresist layer of crystal edge area is not also removed, therefore, when carrying out etch process with pattern dielectric layer, the dielectric layer that is positioned on the crystal edge area just can not be removed, and do not cause the substrate of crystal edge area to come out, thus the accessory substance that the subsequent technique reaction produces can be prevented, as organic impurity, be deposited in the substrate, avoid the follow-up rete that produces in crystal edge area to produce and peel off.
To be example with the internal connection-wire structure below, the semiconductor making method of crystal border film layer from stripping that prevents of the present invention will be explained.
Figure 1B illustrates the top view into wafer.Fig. 2 A to Fig. 2 C is the flow process profile according to the manufacture method of the intraconnections that the embodiment of the invention illustrated.Please refer to Fig. 2 A, at first, substrate 200 is provided, centre line L is divided into the front and the back side with substrate 200, the wherein positive upper surface 202 and the side first half 204 that comprises substrate 200, and the back side comprises the lower surface 206 and side Lower Half 208 of substrate, and upper surface 202 has crystal edge area 210 and center 212, crystal edge area 210 is around upper surface 202 outer rims (shown in Figure 1B), and its width is 5mm for example, and center 212 has been formed with semiconductor element.Semiconductor element for example comprises grid 214, gate dielectric layer 216, clearance wall 217, source/drain regions 218, and certainly, semiconductor element can also be other any element.
Then, please refer to Fig. 2 B, on the front of substrate 200, form one dielectric layer 220.The material of dielectric layer 220 for example is a silica, and the formation method for example is the high density plasma CVD method, or dielectric layer 220 also can be a composite dielectric layer.Then, in substrate 200, form one deck photoresist layer 222.The formation method of photoresist layer 222 for example is to use the rotary coating mode, therefore photoresist layer 222 is except the upper surface 202 that covers substrate 200, also can be attached to the side first half 204 and side Lower Half 208, even be attached on the part lower surface 206.
Next, please refer to Fig. 2 C, the side washing step is carried out in substrate 200.Different with the side washing step of generally knowing, in the present embodiment, only to the back side of substrate 200 (being side Lower Half 208 and lower surface 206) for example being that edge droplet ablution carries out side washing, with the photoresist layer 222 on the back side of removing substrate 200, and side washing is not carried out in the front of substrate 200, be positioned at photoresist layer 222 on the crystal edge area 210 with reservation.Then, with photoresist layer 222 patterning.It should be noted that in this step, still keep the photoresist layer 222 that is positioned on the crystal edge area 210.Then, carry out etch process, in dielectric layer 220, to form opening 223.Because in previous step, not the photoresist layer 222 that is positioned at crystal edge area is carried out side washing, and when the photoresist layer pattern, do not remove the photoresist layer of crystal edge, therefore dielectric layer 220 still is covered on the crystal edge area 210, avoids substrate 200 to come out.Afterwards, form earlier one deck conductor material layer (not illustrating) on dielectric layer 220, the material of this conductor material layer for example be a metal, and then with conductor material layer patterning formation conductor layer 224, with as the usefulness that connects window connector and lead.
In sum, the present invention is because of when carrying out the side washing step to the photoresist layer, only utilize edge droplet ablution that side washing is carried out at the back side of substrate, remove the photoresist layer of backside of substrate, and side washing is not carried out in the front of substrate, be positioned at photoresist layer on the crystal edge area with reservation, and when the photoresist layer pattern, the photoresist layer of crystal edge area still remains, therefore, dielectric layer still is covered on the crystal edge area in follow-up technology, avoids substrate to come out, make substrate in follow-up technology, can not come out, so can prevent the accessory substance that the subsequent technique reaction produces,, be deposited in the substrate as organic impurity, and then avoid the follow-up rete that produces in crystal edge area to produce and peel off, to keep the rate of finished products of product.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (12)
1. semiconductor making method that prevents crystal border film layer from stripping comprises:
One substrate is provided, this substrate has a positive and back side, wherein this front comprises a upper surface of this substrate and a side first half of this substrate, and this back side comprises an a lower surface of this substrate and a side Lower Half of this substrate, and this upper surface has a crystal edge area and a center, and this crystal edge area is around this upper surface outer rim;
On this front of this substrate, form a dielectric layer;
Form a photoresist layer, this photoresist layer covers this front, this side Lower Half and this lower surface of part of this substrate; And
Only a side washing step is carried out at this back side of this substrate,, keep this photoresist layer that is positioned at this crystal edge area with this photoresist layer on this back side of removing this substrate.
2. the semiconductor making method that prevents crystal border film layer from stripping as claimed in claim 1, wherein the width of this crystal edge area is 5mm.
3. the semiconductor making method that prevents crystal border film layer from stripping as claimed in claim 1, wherein the material of this dielectric layer is a silica.
4. the semiconductor making method that prevents crystal border film layer from stripping as claimed in claim 1, wherein the formation method of this dielectric layer is the high density plasma CVD method.
5. the semiconductor making method that prevents crystal border film layer from stripping as claimed in claim 1, wherein this side washing step is an edge droplet ablution.
6. the semiconductor making method that prevents crystal border film layer from stripping as claimed in claim 1, the method that wherein forms this photoresist layer is a rotary coating.
7. the manufacture method of an intraconnections comprises:
One substrate is provided, this substrate has a positive and back side, wherein this front comprises a upper surface of this substrate and a side first half of this substrate, and this back side comprises an a lower surface of this substrate and a side Lower Half of this substrate, and this upper surface has a crystal edge area and a center, this crystal edge area is around this upper surface outer rim, and this center has been formed with semiconductor element;
On this front of this substrate, form a dielectric layer;
Form a photoresist layer in this substrate, this photoresist layer covers this front, this side Lower Half and this lower surface of part of this substrate;
Only a side washing step is carried out at this back side of this substrate, with this photoresist layer on this back side of removing this substrate;
With this photoresist layer patternization of center, keep this photoresist layer of crystal edge area;
With this photoresist layer is mask, this dielectric layer of patterning; And
On this dielectric layer, form patterning conductor layer.
8. the manufacture method of intraconnections as claimed in claim 7, wherein the width of this crystal edge area is 5mm.
9. the manufacture method of intraconnections as claimed in claim 7, wherein the material of this dielectric layer is a silica.
10. the manufacture method of intraconnections as claimed in claim 9, wherein the formation method of this dielectric layer is the high density plasma CVD method.
11. the manufacture method of intraconnections as claimed in claim 7, wherein this side washing step is an edge droplet ablution.
12. the manufacture method of intraconnections as claimed in claim 7, the method that wherein forms this photoresist layer is a rotary coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2005101039211A CN100423193C (en) | 2005-09-15 | 2005-09-15 | Semiconductor producing method for preventing crystal border film layer from stripping and interconnection wire producing method |
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| CNB2005101039211A CN100423193C (en) | 2005-09-15 | 2005-09-15 | Semiconductor producing method for preventing crystal border film layer from stripping and interconnection wire producing method |
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| CN1933103A CN1933103A (en) | 2007-03-21 |
| CN100423193C true CN100423193C (en) | 2008-10-01 |
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| CNB2005101039211A Expired - Fee Related CN100423193C (en) | 2005-09-15 | 2005-09-15 | Semiconductor producing method for preventing crystal border film layer from stripping and interconnection wire producing method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897205A (en) * | 1994-09-21 | 1996-04-12 | Mitsubishi Electric Corp | Coating method of sog film |
| JPH1064904A (en) * | 1996-08-16 | 1998-03-06 | Sony Corp | Manufacturing method of semiconductor device |
| US20030073320A1 (en) * | 2001-10-16 | 2003-04-17 | Applied Materials, Inc. | Method for preventing surface corrosion in an edge bead removal process |
| CN1610078A (en) * | 2003-10-22 | 2005-04-27 | 联华电子股份有限公司 | Method for removing stripping of wafer edge |
-
2005
- 2005-09-15 CN CNB2005101039211A patent/CN100423193C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0897205A (en) * | 1994-09-21 | 1996-04-12 | Mitsubishi Electric Corp | Coating method of sog film |
| JPH1064904A (en) * | 1996-08-16 | 1998-03-06 | Sony Corp | Manufacturing method of semiconductor device |
| US20030073320A1 (en) * | 2001-10-16 | 2003-04-17 | Applied Materials, Inc. | Method for preventing surface corrosion in an edge bead removal process |
| CN1610078A (en) * | 2003-10-22 | 2005-04-27 | 联华电子股份有限公司 | Method for removing stripping of wafer edge |
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| CN1933103A (en) | 2007-03-21 |
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Granted publication date: 20081001 Termination date: 20100915 |