CN100420133C - Nondestructive buffering zero-voltage soft switch full-bridged PWM DC-DC converter - Google Patents
Nondestructive buffering zero-voltage soft switch full-bridged PWM DC-DC converter Download PDFInfo
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- CN100420133C CN100420133C CNB2006100103906A CN200610010390A CN100420133C CN 100420133 C CN100420133 C CN 100420133C CN B2006100103906 A CNB2006100103906 A CN B2006100103906A CN 200610010390 A CN200610010390 A CN 200610010390A CN 100420133 C CN100420133 C CN 100420133C
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
This invention relates to part voltage flexible switch bridge PWM DC-DC exchanger without buffer and relates to zero voltage flexile switch PWM DC-DC exchange technique. This invention comprises first isolation grating field tubes source ends connected to the leakage end of third isolation grating field with ninth capacitor between. This invention adds one lossless buffer circuit on side of transducer to reduce diode reverse voltage impacting.
Description
Technical field
The present invention relates to Zero-voltage soft switch (ZVS) full bridge PWM DC-DC converter technique field.
Background technology
The full-bridge converter topology is one of circuit topology the most frequently used in the domestic and international DC-DC converter circuit, in the first-selected especially topology of middle high-power applications occasion, has obtained extensive studies.This mainly is that to consider that it has a device for power switching electric current and voltage rated value less, the more high obvious advantage of power transformer utilance.For reducing the converter volume, should improve switching frequency, but bring higher switching loss simultaneously, can adopt the no-voltage technology to solve.The efficient of tradition hard-switching converter is 70%～75%, and transducer effciency can reach more than 90% after the employing no-voltage technology.It is on the basis that does not change topological structure, realized the zero voltage switch of full-bridge converter switching device by control method, but it exists also that lagging leg zero voltage switch narrow range, duty-cycle loss are serious, the output rectifier diode is in weak points such as reverse voltage overshoot.If can under the prerequisite of zero voltage switch, solve some weakness of self and don't make circuit structure too complicated, will make the full-bridge phase shifting converter obtain aborning to use widely.Be a kind of improved topological structure of full-bridge ZVS PWMDC-DC converter as shown in Figure 1, this circuit topology has been widened converter lagging leg no-voltage scope, but secondary rectifier diode reverse voltage overshoot problem does not solve.
Summary of the invention
In order to solve the problem that there is reverse voltage overshoot in existing full-bridge ZVS PWM DC-DC converter secondary rectifier diode, the invention provides a kind of zero-voltage soft switch full-bridged PWM DC-DC converter of nondestructive buffering, described converter comprises the first insulating gate type field effect tube Q
1, the second insulating gate type field effect tube Q
2, the 3rd insulating gate type field effect tube Q
3, the 4th insulating gate type field effect tube Q
4, the first diode D
1, first capacitor C
1, the second diode D
2, second capacitor C
2, the 3rd diode D
3, the 3rd capacitor C
3, the 4th diode D
4, the 4th capacitor C
4, the 5th diode D
5, the 5th capacitor C
5, the 6th diode D
6, the 6th capacitor C
6, high frequency transformer T, the 7th diode D
7, the 8th diode D
8, first inductance L
a, second inductance L
f, the 3rd inductance L
Ik, filter capacitor C
fWith load resistance R; The first insulating gate type field effect tube Q
1, the second insulating gate type field effect tube Q
2, the 3rd insulating gate type field effect tube Q
3With the 4th insulating gate type field effect tube Q
4Constitute full-bridge DC-DC translation circuit, the first diode D
1Two ends be attempted by the first insulating gate type field effect tube Q respectively
1Drain electrode end and source terminal between, first capacitor C
1Be connected in parallel on the first diode D
1Two ends, the second diode D
2Two ends respectively and meet the second insulating gate type field effect tube Q
2Drain electrode end and source terminal between, second capacitor C
2Be connected in parallel on the second diode D
2Two ends, the 3rd diode D
3Two ends respectively and meet the 3rd insulating gate type field effect tube Q
3Drain electrode end and source terminal between, the 3rd capacitor C
3Be connected in parallel on the 3rd diode D
3Two ends, the 4th diode D
4Two ends respectively and meet the 4th insulating gate type field effect tube Q
4Drain electrode end and source terminal between, the 4th capacitor C
4Be connected in parallel on the 4th diode D
4Two ends; The second insulating gate type field effect tube Q
2Source terminal and the 4th insulating gate type field effect tube Q
4Drain electrode end link to each other and this end B that links to each other by first inductance L
aConnect the 5th diode D
5Positive terminal and the 6th diode D
6Negative pole end, the 5th diode D
5Negative pole end connect the second insulating gate type field effect tube Q
2Drain electrode end, the 6th diode D
6Positive terminal connect the 4th insulating gate type field effect tube Q
4Source terminal, the 5th capacitor C
5Be connected in parallel on the 5th diode D
5Two ends, the 6th capacitor C
6Be connected in parallel on the 6th diode D
6Two ends; The second insulating gate type field effect tube Q
2Source terminal connect the end of the same name of the former limit of high frequency transformer T winding, the 3rd inductance L
IkAn end connect the non-same polarity of the former limit of high frequency transformer T winding, the end of the same name of the secondary winding of high frequency transformer T connects the 7th diode D
7Positive terminal, the 7th diode D
7Negative pole end connect second inductance L
fAn end and the 8th diode D
8Negative pole end, the 8th diode D
8Positive terminal connect the non-same polarity of the secondary winding of high frequency transformer T, second inductance L
fThe other end and the centre tap of the secondary winding of high frequency transformer T between and meet filter capacitor C
f, filter capacitor C
fTwo ends and be connected to load resistance R; Described converter also comprises the 7th capacitor C
7, the 8th capacitor C
8, the 9th capacitor C
g, the 9th diode D
9, the tenth diode D
10, the 11 diode D
11, the 12 diode D
12With the 4th inductance L
g, the first insulating gate type field effect tube Q
1Source terminal and the 3rd insulating gate type field effect tube Q
3Drain electrode end link to each other and this link to each other end A and the 3rd inductance L
IkThe other end between be in series with the 9th capacitor C
g, the 7th diode D
7Positive terminal connect the 7th capacitor C
7An end, the 7th capacitor C
7The other end connect the 9th diode D
9Negative pole end and the 11 diode D
11Positive terminal, the 9th diode D
9Positive terminal connect the 7th diode D
7Negative pole end, the 8th diode D
8Negative pole end and the tenth diode D
10Positive terminal, the tenth diode D
10Negative pole end connect the 12 diode D
12Positive terminal and the 8th capacitor C
8An end, the 8th capacitor C
8The other end connect the 8th diode D
8Positive terminal, the 11 diode D
11Negative pole end connect the 4th inductance L
gAn end and the 12 diode D
12Negative pole end, the 4th inductance L
gThe other end connect the 7th diode D
7Negative pole end.
As shown in Figure 2, the first insulating gate type field effect tube Q of the present invention
1, the second insulating gate type field effect tube Q
2, the 3rd insulating gate type field effect tube Q
3, the 4th insulating gate type field effect tube Q
4Can adopt N channel enhancement MOSFET pipe; What wherein all diodes all used is fast recovery diode.In this circuit, on the lagging leg in parallel one by diode (i.e. the 5th diode D
5, the 6th diode D
6), electric capacity (i.e. the 5th capacitor C
5, the 6th capacitor C
6) and inductance (i.e. first inductance L
a) auxiliary circuit formed, make lagging leg realize zero voltage switch easily.Because switching frequency is very high, high frequency transformer T can produce bias phenomenon, so the present invention is in capacitance of former limit series connection (i.e. the 9th capacitor C
g), so just can avoid the generation of magnetic bias, improve the performance of Power Conversion.The present invention has also increased a lossless buffer circuit at the secondary of high frequency transformer T, reduces the reverse voltage overshoot of rectifier diode, and described lossless buffer circuit is by the 7th capacitor C
7, the 8th capacitor C
8, the 9th diode D
9, the tenth diode D
10, the 11 diode D
11, the 12 diode D
12With the 4th inductance L
gConstitute.
Following surface analysis operation principle of the present invention, as shown in Figure 2, the initial end of present converter of the present invention increases DC power supply voltage V
InConverter of the present invention is divided into ten mode in half period.
At t
0Constantly, D
3And Q
4Conducting, V
AB(V as shown in Figure 2,
ABVoltage between expression A, the B point) voltage is zero, and high frequency transformer T primary current is in afterflow state, inductance L
aCurrent i
aAlso be in the afterflow state, it flows through Q
4And D
6
(1) switch mode 1[t
0, t
1].At t
0Constantly, Q
4Turn-off i
a, i
pGive C simultaneously
4C is given in charging
2Discharge is because C
2And C
4Existence, Q
4Be that no-voltage is turn-offed.This moment V
AB=-V
C4(be C
4The voltage at two ends), V
ABPolarity become negatively by zero, just going up negatively under the high frequency transformer T secondary winding electromotive force, rectification is with the 8th diode D
8Conducting.Rectification is with the 7th diode D
7And D
8Conducting simultaneously, with high frequency transformer T secondary winding short circuit, high frequency transformer T secondary winding voltage is zero like this, former limit winding voltage also is zero.At t
1Constantly, work as C
4Voltage rise to V
mThe time, D
2The nature conducting finishes this switch mode.
(2) switch mode 2[t
1, t
2].At t
1Constantly, D
2The nature conducting is with Q
2Voltage clamp in zero-bit, this moment just can open Q
2, Q
2Be that no-voltage is open-minded.Because supply voltage V
mBe added in high frequency transformer T leakage inductance two ends, primary current i
pDescend.To t
2Constantly, primary current i
pDrop to zero, diode D
2And D
3Naturally turn-off Q
2And Q
3To flow through electric current.
(3) switch mode 3[t
2, t
3].At t
2Constantly, primary current i
pBy on the occasion of zero passage, and increase to negative direction, this moment Q
2And Q
3Be primary current i
pProvide passage, V
AB=-V
In, main loop of power circuit powering load, auxiliary induction current i
aContinue linear decline, up to dropping to zero, end switch mode 3.
(4) switch mode 4[t
3, t
4].From t
3Beginning, L
aWith auxiliary capacitor C
5And C
6Resonance work, i
aOppositely increase, give C
5Discharge, C
6Charging.At t
4Constantly, D
7Turn-off D
8Flow through whole load currents, C
6Voltage rise to input supply voltage V
In, C
5Voltage drop to zero, at this moment, D
5Conducting, switch mode 4 finishes.
(5) switch mode 5[t
4, t
5].At t
4Constantly, D
8Flow through whole load currents, at this moment, C
7With high frequency transformer T secondary leakage inductance generation resonance.At t
5Constantly, C
7Voltage rise to 4V
In/ n (n is a natural number, and it represents the no-load voltage ratio of high frequency transformer T), L
gIt is the pressure drop of two diodes.D
7Voltage and C
7Voltage equal substantially, thereby D
7Reverse voltage be limited in 0～4V
InBetween/the n.
(6) switch mode 6[t
5, t
6].At t
5Constantly, C
7Voltage rise to 4V
In/ n.At this moment, C
7Pass through D
11And L
gGive load discharge, L
gVoltage reversal become-2V
In/ n, linear then decline.At t
6Constantly, C
7Between voltage drop to 2V
In/ n, and L
gVoltage be the pressure drop of two diodes.
(7) switch mode 7[t
6, t
7].Under this mode, C
7Between the voltage perseverance be 2V
In/ n.And inductance L
gVoltage also perseverance be the pressure drop of two diodes, V
InProvide energy to load.At t
7Constantly, Q
3Turn-off.
(8) switch mode 8[t
7, t
8].At t
7Constantly, Q
3Turn-off current i
pWill be to C
3Charging, C
1Discharge.In this stage, the transformer original edge voltage is linear to descend.At t
8Constantly, C
3On voltage be upgraded to V
In, the transformer original edge voltage reduces to zero.Because C is arranged
1And C
3Effect, Q
3Be that no-voltage is turn-offed.
(9) switch mode 9[t
8, t
9].In the meantime, primary current flows through Q
2And D
1, electric current is linear to descend.At this moment, open Q
1, Q so
1Be that no-voltage is open-minded.C
7Pass through D
11And L
gGive load discharge, at t
9Constantly, C
7Voltage drop to zero.
(10) switch mode 10[t
9, t
10].In the meantime, inductance L
gThe voltage perseverance be the pressure drop of two diodes.At t
10Moment Q
2Turn-off.
The working condition in second cycle and the working condition of preceding half cycle are in full accord.
The invention effect: transducer effciency can reach more than 90% after the present invention adopted the no-voltage technology.The present invention is guaranteeing that circuit structure does not have on the complicated basis, has solved simultaneously that lagging leg zero voltage switch narrow range, duty-cycle loss are serious, the output rectifier diode is in problems of the prior art such as reverse voltage overshoot.
Description of drawings
Fig. 1 is a kind of improved full-bridge ZVS PWM DC-DC converter topology structural representation in the prior art.Fig. 2 is a topological structure schematic diagram of the present invention, i among the figure
pBe the primary current of high frequency transformer T, i
aFor flowing through first inductance L
aElectric current.Fig. 3 is lagging leg switching tube (the second insulating gate type field effect tube Q when converter is operated in nominal load in the embodiment
2) driving and drain-source voltage waveform.Fig. 4 be in the embodiment rectification with the 7th diode D
7Voltage waveform.
Embodiment
Referring to Fig. 2 this embodiment is described.
The converter of this embodiment is by the first insulating gate type field effect tube Q
1, the second insulating gate type field effect tube Q
2, the 3rd insulating gate type field effect tube Q
3, the 4th insulating gate type field effect tube Q
4, the first diode D
1, first capacitor C
1, the second diode D
2, second capacitor C
2, the 3rd diode D
3, the 3rd capacitor C
3, the 4th diode D
4, the 4th capacitor C
4, the 5th diode D
5, the 5th capacitor C
5, the 6th diode D
6, the 6th capacitor C
6, high frequency transformer T, the 7th diode D
7, the 8th diode D
8, first inductance L
a, second inductance L
f, the 3rd inductance L
Ik, filter capacitor C
f, load resistance R, the 7th capacitor C
7, the 8th capacitor C
8, the 9th capacitor C
g, the 9th diode D
9, the tenth diode D
10, the 11 diode D
11, the 12 diode D
12With the 4th inductance L
gForm; The first insulating gate type field effect tube Q
1, the second insulating gate type field effect tube Q
2, the 3rd insulating gate type field effect tube Q
3With the 4th insulating gate type field effect tube Q
4Constitute full-bridge DC-DC translation circuit, the first diode D
1Two ends be attempted by the first insulating gate type field effect tube Q respectively
1Drain electrode end and source terminal between, first capacitor C
1Be connected in parallel on the first diode D
1Two ends, the second diode D
2Two ends respectively and meet the second insulating gate type field effect tube Q
2Drain electrode end and source terminal between, second capacitor C
2Be connected in parallel on the second diode D
2Two ends, the 3rd diode D
3Two ends respectively and meet the 3rd insulating gate type field effect tube Q
3Drain electrode end and source terminal between, the 3rd capacitor C
3Be connected in parallel on the 3rd diode D
3Two ends, the 4th diode D
4Two ends respectively and meet the 4th insulating gate type field effect tube Q
4Drain electrode end and source terminal between, the 4th capacitor C
4Be connected in parallel on the 4th diode D
4Two ends; The second insulating gate type field effect tube Q
2Source terminal and the 4th insulating gate type field effect tube Q
4Drain electrode end link to each other and this end B that links to each other by first inductance L
aConnect the 5th diode D
5Positive terminal and the 6th diode D
6Negative pole end, the 5th diode D
5Negative pole end connect the second insulating gate type field effect tube Q
2Drain electrode end, the 6th diode D
6Positive terminal connect the 4th insulating gate type field effect tube Q
4Source terminal, the 5th capacitor C
5Be connected in parallel on the 5th diode D
5Two ends, the 6th capacitor C
6Be connected in parallel on the 6th diode D
6Two ends; The second insulating gate type field effect tube Q
2Source terminal connect the end of the same name of the former limit of high frequency transformer T winding, the 3rd inductance L
IkAn end connect the non-same polarity of the former limit of high frequency transformer T winding, the end of the same name of the secondary winding of high frequency transformer T connects the 7th diode D
7Positive terminal, the 7th diode D
7Negative pole end connect second inductance L
fAn end and the 8th diode D
8Negative pole end, the 8th diode D
8Positive terminal connect the non-same polarity of the secondary winding of high frequency transformer T, second inductance L
fThe other end and the centre tap of the secondary winding of high frequency transformer T between and meet filter capacitor C
f, filter capacitor C
fTwo ends and be connected to load resistance R; The first insulating gate type field effect tube Q
1Source terminal and the 3rd insulating gate type field effect tube Q
3Drain electrode end link to each other and this link to each other end A and the 3rd inductance L
IkThe other end between be in series with the 9th capacitor C
g, the 7th diode D
7Positive terminal connect the 7th capacitor C
7An end, the 7th capacitor C
7The other end connect the 9th diode D
9Negative pole end and the 11 diode D
11Positive terminal, the 9th diode D
9Positive terminal connect the 7th diode D
7Negative pole end, the 8th diode D
8Negative pole end and the tenth diode D
10Positive terminal, the tenth diode D
10Negative pole end connect the 12 diode D
12Positive terminal and the 8th capacitor C
8An end, the 8th capacitor C
8The other end connect the 8th diode D
8Positive terminal, the 11 diode D
11Negative pole end connect the 4th inductance L
gAn end and the 12 diode D
12Negative pole end, the 4th inductance L
gThe other end connect the 7th diode D
7Negative pole end; At the first insulating gate type field effect tube Q
1Drain electrode end and the 3rd insulating gate type field effect tube Q
3Source terminal between connect DC power supply V
In, on load resistance R, can obtain required direct voltage V so
Out
High frequency transformer T is the core component of Switching Power Supply, is the main devices that realizes energy (power) conversion transmission, and simultaneously, this device is again the main holder and the pyrotoxin of Switching Power Supply volume and weight.Therefore, realize the miniaturization and of Switching Power Supply, the target of plane intellectuality and high reliability, key is the design of high frequency transformer T.Being chosen in the Design of High Frequency Transformer of magnetic material occupies an important position.The magnetic material that the present invention chooses is a manganese-zinc ferrite, because its magnetic permeability height can alleviate core volume, magnetic flux density is medium, and the resistivity height loses for a short time, and the low suitable high frequency of price uses.The parameter of AP method calculating transformer is adopted in high frequency transformer T design.The chip for driving that adopts among the present invention is the IR2110 that American I R company produces.IR2110 is the one chip integrated drive that a kind of binary channels high pressure, high-speed power device grids drive.This driver can convert input logic signal to homophase Low ESR output drive signal, and frequency can reach 500kHz, can be used for driving N channel power field effect transistor or the igbt (IGBT) that operating voltage reaches 500V.
In order to verify the correctness of structure of the present invention, the present invention utilizes the model machine of 100kHz, 24V/2A that it is tested.Lagging leg switching tube when as shown in Figure 3, being operated in nominal load (the second insulating gate type field effect tube Q for converter
2) driving and drain-source voltage waveform, waveform 1 is Q
2Drive waveforms, waveform 2 is Q
2The drain-source voltage waveform.As can be seen from the figure, because the effect of former limit auxiliary network makes Q
2Be operated under the zero-voltage state well.As shown in Figure 4, for rectification with the 7th diode D
7Voltage waveform.As can be seen from the figure, by adding lossless buffer circuit at high frequency transformer T secondary, the reverse voltage of rectifier diode is limited in 4V
InIn/the n.As a result, the maximum of rectifier diode reverse voltage is by input voltage V
InWith no-load voltage ratio n decision, consistent with theoretical analysis.The voltage regulation of this embodiment is less than 1%, and load regulation is less than 1%, and ripple coefficient is less than 0.5%, and the efficient of converter is greater than 90%.
Claims (1)
1. the zero-voltage soft switch full PWM DC-DC converter of nondestructive buffering, described converter comprises the first insulating gate type field effect tube (Q
1), the second insulating gate type field effect tube (Q
2), the 3rd insulating gate type field effect tube (Q
3), the 4th insulating gate type field effect tube (Q
4), the first diode (D
1), the first electric capacity (C
1), the second diode (D
2), the second electric capacity (C
2), the 3rd diode (D
3), the 3rd electric capacity (C
3), the 4th diode (D
4), the 4th electric capacity (C
4), the 5th diode (D
5), the 5th electric capacity (C
5), the 6th diode (D
6), the 6th electric capacity (C
6), high frequency transformer (T), the 7th diode (D
7), the 8th diode (D
8), the first inductance (L
a), the second inductance (L
f), the 3rd inductance (L
Ik), filter capacitor (C
f) and load resistance (R); First insulating gate type field effect tube (the Q
1), the second insulating gate type field effect tube (Q
2), the 3rd insulating gate type field effect tube (Q
3) and the 4th insulating gate type field effect tube (Q
4) formation full-bridge DC-DC translation circuit, the first diode (D
1) be attempted by the first insulating gate type field effect tube (Q
1) drain electrode end and source terminal between, the first electric capacity (C
1) be connected in parallel on the first diode (D
1) two ends, the second diode (D
2) be attempted by the second insulating gate type field effect tube (Q
2) drain electrode end and source terminal between, the second electric capacity (C
2) be connected in parallel on the second diode (D
2) two ends, the 3rd diode (D
3) be attempted by the 3rd insulating gate type field effect tube (Q
3) drain electrode end and source terminal between, the 3rd electric capacity (C
3) be connected in parallel on the 3rd diode (D
3) two ends, the 4th diode (D
4) be attempted by the 4th insulating gate type field effect tube (Q
4) drain electrode end and source terminal between, the 4th electric capacity (C
4) be connected in parallel on the 4th diode (D
4) two ends; Second insulating gate type field effect tube (the Q
2) source terminal and the 4th insulating gate type field effect tube (Q
4) drain electrode end link to each other and this end (B) that links to each other by the first inductance (L
a) connection the 5th diode (D
5) positive terminal and the 6th diode (D
6) negative pole end, the 5th diode (D
5) negative pole end connect the second insulating gate type field effect tube (Q
2) drain electrode end, the 6th diode (D
6) positive terminal connect the 4th insulating gate type field effect tube (Q
4) source terminal, the 5th electric capacity (C
5) be connected in parallel on the 5th diode (D
5) two ends, the 6th electric capacity (C
6) be connected in parallel on the 6th diode (D
6) two ends; Second insulating gate type field effect tube (the Q
2) source terminal connect the end of the same name of the former limit of high frequency transformer (T) winding, the 3rd inductance (L
Ik) an end connect the non-same polarity of the former limit of high frequency transformer (T) winding, the end of the same name of the secondary winding of high frequency transformer (T) connects the 7th diode (D
7) positive terminal, the 7th diode (D
7) negative pole end connect the second inductance (L
f) an end and the 8th diode (D
8) negative pole end, the 8th diode (D
8) positive terminal connect the non-same polarity of the secondary winding of high frequency transformer (T), the second inductance (L
f) the other end and the centre tap of the secondary winding of high frequency transformer (T) between and meet filter capacitor (C
f), filter capacitor (C
f) two ends and be connected to load resistance (R); It is characterized in that described converter also comprises the 7th electric capacity (C
7), the 8th electric capacity (C
8), the 9th electric capacity (C
g), the 9th diode (D
9), the tenth diode (D
10), the 11 diode (D
11), the 12 diode (D
12) and the 4th inductance (L
g), the first insulating gate type field effect tube (Q
1) source terminal and the 3rd insulating gate type field effect tube (Q
3) drain electrode end link to each other and this link to each other end (A) and the 3rd inductance (L
Ik) the other end between be in series with the 9th electric capacity (C
g), the 7th diode (D
7) positive terminal connect the 7th electric capacity (C
7) an end, the 7th electric capacity (C
7) the other end connect the 9th diode (D
9) negative pole end and the 11 diode (D
11) positive terminal, the 9th diode (D
9) positive terminal connect the 7th diode (D
7) negative pole end, the 8th diode (D
8) negative pole end and the tenth diode (D
10) positive terminal, the tenth diode (D
10) negative pole end connect the 12 diode (D
12) positive terminal and the 8th electric capacity (C
8) an end, the 8th electric capacity (C
8) the other end connect the 8th diode (D
8) positive terminal, the 11 diode (D
11) negative pole end connect the 4th inductance (L
g) an end and the 12 diode (D
12) negative pole end, the 4th inductance (L
g) the other end connect the 7th diode (D
7) negative pole end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100103906A CN100420133C (en) | 2006-08-09 | 2006-08-09 | Nondestructive buffering zero-voltage soft switch full-bridged PWM DC-DC converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100103906A CN100420133C (en) | 2006-08-09 | 2006-08-09 | Nondestructive buffering zero-voltage soft switch full-bridged PWM DC-DC converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1929272A CN1929272A (en) | 2007-03-14 |
| CN100420133C true CN100420133C (en) | 2008-09-17 |
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|---|---|---|---|
| CNB2006100103906A Expired - Fee Related CN100420133C (en) | 2006-08-09 | 2006-08-09 | Nondestructive buffering zero-voltage soft switch full-bridged PWM DC-DC converter |
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|---|---|---|---|---|
| CN101860217A (en) * | 2010-06-11 | 2010-10-13 | 哈尔滨工业大学 | ZVS full-bridge three-level converter with bilateral buffer network |
| CN102983747A (en) * | 2012-12-04 | 2013-03-20 | 大连海事大学 | Full-bridge combined soft switching DC (direct-current) converter |
| CN107565603B (en) * | 2017-10-24 | 2024-04-09 | 国网辽宁省电力有限公司 | Overvoltage protection device and method suitable for grid connection of wind power hydrogen production energy storage system |
| CN111418139A (en) * | 2019-08-19 | 2020-07-14 | 深圳欣锐科技股份有限公司 | Pulse width modulation control circuit, switching power supply and equipment |
| CN110932557B (en) * | 2019-11-29 | 2021-01-12 | 山东科技大学 | High-gain quasi-resonant DC-DC converter based on voltage doubling rectifying circuit |
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| CN1540851A (en) * | 2003-10-31 | 2004-10-27 | 哈尔滨工业大学 | Switch PWM convertor working at zero voltage and zero current of full bridge |
| CN1560990A (en) * | 2004-03-11 | 2005-01-05 | 哈尔滨工业大学 | Single-level power factor correction all-bridge changer |
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- 2006-08-09 CN CNB2006100103906A patent/CN100420133C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1540851A (en) * | 2003-10-31 | 2004-10-27 | 哈尔滨工业大学 | Switch PWM convertor working at zero voltage and zero current of full bridge |
| CN1560990A (en) * | 2004-03-11 | 2005-01-05 | 哈尔滨工业大学 | Single-level power factor correction all-bridge changer |
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| Title |
|---|
| 具有无损缓冲电路的ZVS DC-DC变换器研究. 刘鸿鹏.哈尔滨工业大学工学硕士学位论文. 2006 |
| 具有无损缓冲电路的ZVS DC-DC变换器研究. 刘鸿鹏.哈尔滨工业大学工学硕士学位论文. 2006 * |
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| CN1929272A (en) | 2007-03-14 |
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