CN103904901B - A kind of phase-shifting full-bridge translation circuit and control method - Google Patents
A kind of phase-shifting full-bridge translation circuit and control method Download PDFInfo
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Abstract
The invention discloses a kind of phase-shifting full-bridge translation circuit, including transformer；Leading-bridge, is composed in series by metal-oxide-semiconductor one and metal-oxide-semiconductor two, and the tie point of the two metal-oxide-semiconductors passes sequentially through electric capacity and resonant inductance and is connected with one end of transformer primary side, and the electric capacity and resonant inductance are serially connected；Lagging leg, is composed in series by metal-oxide-semiconductor three and metal-oxide-semiconductor four, and the tie point of the two metal-oxide-semiconductors is connected with the other end of transformer primary side, and the DC voltage of input is added between metal-oxide-semiconductor one and the tie point of metal-oxide-semiconductor three and the tie point of metal-oxide-semiconductor two and metal-oxide-semiconductor four；Output circuit, is made up of four commutation diodes and output capacitance；The two ends of the output capacitance are the DC voltage of output.The present invention discloses phase-shifting full-bridge translation circuit control method.The present invention realizes the full-bridge soft-switching of phase-shifting full-bridge translation circuit, reduces switching loss, improves overall efficiency.
Description
Technical field
The present invention relates to phase-shifting full-bridge converter technique field, it is more particularly to a kind of in high-power phase-shifting full-bridge translation circuit and
Control method.
Background technology
Phase-shifting full-bridge transformation topology is one of the most widely used topology in current high power D C/DC converters, is also
A kind of more circuit structure of research.It utilizes the discharge and recharge resonance manner between inductance and electric capacity so that full-bridge metal-oxide-semiconductor is being opened
Sofe Switch is realized when logical to reduce switching loss, so as to improve switching frequency and complete machine effect on the premise of switching loss is not increased
Rate.But tradition phase-shifting full-bridge circuit has many defects, referring to circuit shown in accompanying drawing 1, subject matter has：
1) energy during underloading stored by resonant inductance L1 is not enough to exhaust the drain source capacitance electricity of back axle metal-oxide-semiconductor (Q3, Q4)
Lotus so that now back axle is operated in hard switching state, causes switching loss to become big heating serious.
2) the commutation diode Reverse recovery of transformer secondary is serious, causes overall efficiency low, tradition phase-shifting full-bridge work
Back axle, which is operated in ZVS states, when making causes secondary commutation diode to be hard shut-off, so there is reverse recovery loss in diode, and
Increase with power output and increase.
3) tradition phase-shifting full-bridge primary side current of transformer is born by being just flushed to down or is flushed on bearing in positive this period, defeated
Going out filter inductance L2 electric current can not be mutated, so transformer primary side is because output diode afterflow is by " short circuit ", so now electric
Source voltage is added on resonant inductance, and adds voltage to be on the transformer 0V, causes duty-cycle loss.
4) with the design of back axle ZVS loading ranges there is conflicting relation in duty-cycle loss size, reduce overall efficiency.
Because if increasing the ZVS scopes of back axle, it is necessary to increase the inductance value L of resonant inductance, by inductance value calculation formula W=1/
2*LI2It can be seen that increase inductance value and L values, show that T=LI/V, wherein V are original edge voltage, T is by formula VT=LI
Time, L is inductance value, and I is transformer T1 primary currents, so time T becomes big after inductance value L increases, i.e., duty cycle time becomes
Greatly.EMI and duty-cycle loss reduce complete machine effect there is also conflicting relation, further caused by main circuit current mutation simultaneously
Rate.Because the EMI of the bigger power supply of curent change slope is more serious, need to reduce the slope of curent change if EMI to be reduced, from
From the point of view of the change of main circuit primary current, the inductance value of resonant inductance must be increased, can be seen that and add after so doing from explanation above
The duty-cycle loss of big power supply.
The content of the invention
Above-mentioned not enough there is provided one kind realize that phase-shifting full-bridge becomes it is an object of the invention to overcome in the presence of prior art
The full-bridge soft-switching of circuit is changed, switching loss is reduced, the one kind for improving overall efficiency realizes phase-shifting full-bridge translation circuit and control
Method.
In order to realize foregoing invention purpose, the technical solution adopted by the present invention is：
A kind of phase-shifting full-bridge translation circuit control method, a work period of phase-shifting full-bridge translation circuit is divided into as follows
Stage：Wherein, G1, G2, G3, G4 are respectively the Applied gate voltages that metal-oxide-semiconductor one arrives metal-oxide-semiconductor four (Q1-Q4), and iL is transformer one
Secondary side resonant inductance L1 electric current, VL is resonant inductance L1 voltage, and VT is the voltage of transformer T1 primary sides, and Vin is defeated
The DC voltage entered, Vo is the DC voltage of output.
The T1 stages：G1 and G4 is simultaneously high level, now Q1 and Q4 ON operations, the voltage VT quilts of transformer T1 primary sides
The voltage clamping of secondary side is now added in the voltage constant at resonant inductance L1 two ends in Vin-nVo in nVo, resonant inductance L1's
Electric current iL linear rises, transformer T1 primary side currents are linearly increasing, while exporting energy to transformer T1 secondary side；T1 ranks
At the end of section, Q1 shut-offs, now because resonant inductance L1 electric current can not change, so continuing to flow by former direction, Q2 drain-source
Electric capacity discharges, Q1 drain source capacitance charging, when Q2 drain source capacitance is discharged to negative pressure, and Q2 conductings realize that Q2 no-voltage is led
Logical, that is, it is the transformer primary secondary turn ratio to realize ZVS, wherein n.
The T2 stages:G2 and G4 is simultaneously high level, Q2 and Q4 conductings, and resonant inductance L1 electric current iL presses former direction flowing；
Now the voltage VL at resonant inductance L1 two ends is just equal with the voltage VT of transformer T1 primary sides, but relative to T1 stage voltages
Reversely, resonant inductance L1 electric current iL is linearly reduced to 0 from maximum, while the voltage VT of transformer T1 primary sides is reduced to 0, change
The commutation diode zero-current switching of depressor T1 secondary sides, eliminates diode reverse recovery problem, draws while reducing Reverse recovery
The EMI risen.
The T3 stages：G2 and G4 remain unchanged while for high level, Q4 and Q2 are simultaneously conducting state, now transformer T1 primary sides
There is no electric current；At the end of the T3 stages, G2 and G4 are changed into Q3 after low level, Q4 zero voltage turn-offs, interval dead time and turned on simultaneously,
Main circuit has inductance L1 to seal in when being turned on because of Q3, and inductive current can not be mutated, from 0 linear rise, so Q3 leads for zero current
It is logical, that is, realize ZCS.
The T4 stages:G2 and G3 is simultaneously high level, and Q2 and Q3 are simultaneously turned on, and the voltage VT of transformer T1 primary sides is secondary
The voltage clamping of side is now added in the voltage constant at resonant inductance L1 two ends in Vin-nVo, resonant inductance L1 electric current in nVo
IL linear rises, transformer primary side current is linearly increasing, while exporting energy to transformer T1 secondary side.
The applicable phase-shifting full-bridge translation circuit of above-mentioned control method must simultaneously meet following condition：
1) primary side of transformer is full bridge structure and is serially connected with electric capacity and resonant inductance, and the full bridge structure is 4 metal-oxide-semiconductors
Composition；
2) the primary side voltage peak value of transformer is the half of busbar voltage；
3) the primary side voltage duty cycle of transformer is less than 50%；
4) secondary side of transformer is diode rectification structure；
5) the storage energy of the resonant inductance is the 1/2 of output energy.
Above-mentioned phase-shifting full-bridge translation circuit, including：
One transformer T1；
One leading-bridge, is composed in series, the tie point a of the two metal-oxide-semiconductors leads to successively by the Q1 of metal-oxide-semiconductor one and the Q2 of metal-oxide-semiconductor two
One end that electric capacity C1 and resonant inductance L1 are crossed with transformer T1 primary sides is connected, and the electric capacity C1 and resonant inductance L1 are serially connected in one
Rise；
One lagging leg, is composed in series, the tie point b and transformation of the two metal-oxide-semiconductors by the Q3 of metal-oxide-semiconductor three and the Q4 of metal-oxide-semiconductor four
The other end connection of device T1 primary sides；
The DC voltage Vin of input is added in the Q1 of the metal-oxide-semiconductor one and Q3 of metal-oxide-semiconductor three tie point and the Q2 of metal-oxide-semiconductor two and metal-oxide-semiconductor four
Between Q4 tie point；
One output circuit, is made up of four commutation diodes (D1, D2, D3, D4) and output capacitance C2；The output capacitance
C2 two ends are the DC voltage Vo of output.
Further, in the output circuit, one end and commutation diode D1 and the rectification of the transformer T1 secondary sides
Diode D2 tie point connection, the other end of the transformer T1 secondary sides is with commutation diode D3's and commutation diode D4
Tie point is connected, and the tie point of the commutation diode D1 and D3 is connected with output capacitance C2 one end, the commutation diode
D2 and D4 tie point is connected with the output capacitance C2 other end.
Compared with prior art, beneficial effects of the present invention：
The ZCS of ZVS and lagging leg in the achievable phase-shifting full-bridge translation circuit leading-bridge full-load range of the present invention,
The full-bridge soft-switching of phase-shifting full-bridge translation circuit is realized, switching loss is reduced；Solve tradition phase-shifting full-bridge circuit transformer
Secondary commutation diode reverse-recovery problems, improve efficiency, reduce complete machine EMI；In large-power occasions, main circuit of the present invention
Work schedule is different from tradition phase-shifting full-bridge circuit, and current break is smaller in main circuit, solves back axle metal-oxide-semiconductor ZVS load models
The design compromise problem between duty-cycle loss is enclosed, overall efficiency is improved.
Brief description of the drawings：
Fig. 1 is existing main circuit topology figure；
Fig. 2 is main circuit topology figure of the present invention；
Fig. 3 is main circuit voltage x current working timing figure of the present invention.
Embodiment
With reference to embodiment, the present invention is described in further detail.But this should not be interpreted as to the present invention
The scope of above-mentioned theme is only limitted to following embodiment, all models that the present invention is belonged to based on the technology that present invention is realized
Enclose.
The phase-shifting full-bridge translation circuit control method of the present invention, referring to Fig. 2 and Fig. 3, by the one of phase-shifting full-bridge translation circuit
The individual work period was divided into such as the next stage：Wherein, G1, G2, G3, G4 are respectively the additional grid that metal-oxide-semiconductor one arrives metal-oxide-semiconductor four (Q1-Q4)
Pole tension, iL is transformer primary side resonant inductance L1 electric current, and VL is resonant inductance L1 voltage, and VT is transformer T1 mono-
The voltage of secondary side, Vin is the DC voltage of input, and Vo is the DC voltage of output, and VD is commutation diode voltage, Vab in Fig. 2
For the voltage between 2 points of a, b in Fig. 2.
The T1 stages：G1 and G4 is simultaneously high level, and G2 and G3 are all low level, now Q1 and Q4 ON operations, Q2 and Q3
Close, the voltage VT of transformer T1 primary sides, in nVo, is now added in the electricity at resonant inductance L1 two ends by the voltage clamping of secondary side
Pressure is constant in Vin-nVo, resonant inductance L1 electric current iL linear rises, and iL=VL*D*T/L, D is dutycycle, and T is the time, and L is
Inductance value, transformer T1 primary side currents are linearly increasing, while exporting energy to transformer T1 secondary side；The T1 stages terminate
When, Q1 shut-offs, now because resonant inductance L1 electric current can not change, so continuing to flow by former direction, Q2 drain source capacitance is put
Electricity, Q1 drain source capacitance charging, when Q2 drain source capacitance is discharged to negative pressure (it is that body diode turns on minimum voltage), Q2 is led
It is logical, Q2 no-voltage conducting is realized, that is, it is the transformer primary secondary turn ratio to realize the ZVS of leading-bridge (calling propons in the following text), wherein n.
The T2 stages:G2 and G4 is simultaneously high level, and G1 and G3 are all low level, Q2 and Q4 conductings, and Q1 and Q3 are closed, resonance
Inductance L1 electric current iL presses former direction flowing；Drawn by Kirchhoff's second law, now the voltage VL at resonant inductance L1 two ends
It is just equal with the voltage VT of transformer T1 primary sides, but relative to T1 stage voltages reversely, resonant inductance L1 electric current iL from
Maximum is linearly reduced to 0, while the voltage VT of transformer T1 primary sides is reduced to 0, the commutation diode of transformer T1 secondary sides
Zero-current switching, eliminates diode reverse recovery problem, while reducing EMI caused by Reverse recovery.
The T3 stages：It is high level simultaneously that G2 and G4, which remain unchanged, and G1 and G3 are all low level, and Q4 and Q2 are simultaneously conducting state,
Q1 and Q3 is closed, and now transformer T1 primary sides do not have electric current；At the end of the T3 stages, G4 is changed into low level, and G3 is changed into high level,
Q3 is turned on after Q4 zero voltage turn-offs, interval dead time, and main circuit has inductance L1 to seal in when being turned on because of Q3, and inductance L1 electric currents are not
It can be mutated, from 0 linear rise, it is possible to which it is zero current passing to think Q3, that is, realizes the ZCS of lagging leg (calling back axle in the following text).
Because front and rear bridge arm dead time is too small, so not drawn specially in Fig. 3.
The T4 stages:G2 and G3 are all high level, and G1 and G4 are all low level, and Q2 and Q3 are simultaneously turned on, and transformer T1 is once
The voltage VT of side, in nVo, is now added in the voltage constant at resonant inductance L1 two ends in Vin-nVo by the voltage clamping of secondary side,
Resonant inductance L1 electric current iL linear rises, transformer primary side current is linearly increasing, while defeated to transformer T1 secondary side
Go out energy.
From Fig. 3 work waves can be seen that the design in propons metal-oxide-semiconductor be operated in ZVS (no-voltage turn-on and turn-off) shape
State, back axle metal-oxide-semiconductor is operated in ZCS (zero current, which is led, can and turn off) state, after power supply can be caused at underloading (including zero load)
Switching loss all is not present for bridge metal-oxide-semiconductor and back axle is operated in Sofe Switch state, so as to realize full-bridge soft-switching, reduction switch is damaged
Consumption.Back axle, which is operated in ZVS states, when tradition phase-shifting full-bridge works causes transformer secondary commutation diode to be hard shut-off, so two
There is reverse recovery loss in pole pipe, and with power output increase face increase, overall efficiency reduction.And back axle is operated in the present invention
ZCS states so that transformer secondary commutation diode is soft switching, so without Reverse recovery, such as Fig. 3, when iL linearly drops to 0
When, VDJust it is changed into 0V, that is, realizes soft switching, overall efficiency is improved.Tradition phase-shifting full-bridge primary side current of transformer is by being just flushed to down
Bear or be flushed on bearing in positive this period, output inductor electric current can not be mutated, so transformer primary side is because of output two
Pole pipe afterflow is by " short circuit ", so now supply voltage is added on resonant inductance, and adds voltage to be on the transformer 0V, causes
Duty-cycle loss.Primary side current of transformer is zero-current switching in the present invention, while output inductor is eliminated, so will not
There is diode continuousing flow phenomenon, there will not be duty-cycle loss problem, overall efficiency is improved.
The present invention also provides above-mentioned control method applicable phase whole-bridging circuit, and it must simultaneously meet following condition：1)
The primary side of transformer is full bridge structure and is serially connected with electric capacity and resonant inductance, and the full bridge structure is 4 metal-oxide-semiconductor compositions；2) become
The primary side voltage peak value of depressor is the half of busbar voltage；3) the primary side voltage duty cycle of transformer is less than 50%；
4) secondary side of transformer is diode rectification structure；5) the storage energy of the resonant inductance is the 1/2 of output energy.
Referring to Fig. 2, the applicable phase whole-bridging circuit of above-mentioned control method includes：One transformer T1；One leading-bridge, by
The Q1 of metal-oxide-semiconductor one and the Q2 of metal-oxide-semiconductor two are composed in series, the tie point a of the two metal-oxide-semiconductors pass sequentially through electric capacity C1 and resonant inductance L1 with
One end connection of transformer T1 primary sides, the electric capacity C1 and resonant inductance L1 are serially connected；One lagging leg, by metal-oxide-semiconductor
Three Q3 and the Q4 of metal-oxide-semiconductor four are composed in series, and the tie point b of the two metal-oxide-semiconductors is connected with the other end of transformer T1 primary sides；Input
DC voltage Vin be added in the Q1 of the metal-oxide-semiconductor one and Q3 of metal-oxide-semiconductor three tie point and the Q2 of the metal-oxide-semiconductor two and Q4 of metal-oxide-semiconductor four tie point it
Between；One output circuit, is made up of four commutation diodes (D1, D2, D3, D4) and output capacitance C2；The output capacitance C2's
Two ends are the DC voltage Vo of output.In the output circuit, one end and the commutation diode D1 of the transformer T1 secondary sides
Connected with commutation diode D2 tie point, the other end and commutation diode D3 and the pole of rectification two of the transformer T1 secondary sides
Pipe D4 tie point connection, the tie point of the commutation diode D1 and D3 is connected with output capacitance C2 one end, the rectification
Diode D2 and D4 tie point are connected with the output capacitance C2 other end.
Compared with tradition phase-shifting full-bridge, the present invention has lacked an output inductor in output circuit, reduces by a device
Part cost, while remove after output inductor so that output capacitance forces side to be joined directly together by commutation diode with transformer,
Because output capacitance voltage is a stationary value, so that ensure primary voltage of transformer operationally in a stable voltage,
Now operationally the rising of charging and discharging currents and descending slope are constant for resonant inductance so that circuit work is more stablized.
Output circuit causes resonant inductance L1 different with transformer T1 design because having lacked output inductor in the present invention
In tradition phase-shifting full-bridge.In the design in order to meet back axle ZCS, full-bridge dutycycle is necessarily less than 0.5.Simultaneously because of resonant inductance storage
The energy of the half of whole power output is deposited, so the magnetic core that resonant inductance is selected under Same Efficieney is than traditional big, sheet
Art personnel know how selection, and I will not elaborate.In order to make the linear rise and the slope declined of resonant inductance exhausted
As far as possible close to value, primary voltage of transformer peak value of the present invention takes the half of supply voltage, that is, the half of the DC voltage inputted.
From figure 3, it can be seen that propons power tube is turned off when resonant inductance electric current reaches maximum, energy in resonant inductance is stored in most
Load end can be delivered to eventually, because the voltage at inductance two ends is the 1/2 of supply voltage, it is possible to which it is output energy to calculate its energy
The 1/2 of amount.In order to allow power supply working stability as far as possible, primary side current of transformer raising and lowering slope must be just allowed to be tried one's best symmetrically,
So original edge voltage takes the 1/2 of power input voltage during design of transformer, so ensure that primary voltage of transformer in resonance
It is 1/2 power input voltage, so as to ensure that the discharge and recharge of resonant inductance when induction charging is with electric discharge as the voltage at two ends
Rise and descending slope is equal, circuit work is more stablized, and overall efficiency is improved.Governor circuit maximum duty cycle is small in the present invention
In 0.5, not so back axle will not be operated in ZCS states.The present invention may finally be realized：ZVS and stagnant in advanced arm full-load range
Postbrachium ZCS, that is, realize full-bridge soft-switching, reduces switching loss；Solve transformer secondary rectification in tradition phase-shifting full-bridge circuit
Diode reverse recovery problem, improves efficiency, reduces complete machine EMI；In large-power occasions, because of the resonant inductance amount in the present invention
It is bigger than tradition phase-shifting full-bridge resonant inductance amount, while main circuit voltage x current work wave (see Fig. 3) is totally different from traditional shifting
Phase full-bridge work wave so that current break is smaller in main circuit, back axle power MOS pipe ZVS loading ranges and duty-cycle loss
Between design compromise, overall efficiency improve.
The embodiment of the present invention is described in detail above in conjunction with accompanying drawing, but the present invention is not restricted to
Embodiment is stated, in the case of the spirit and scope of claims hereof are not departed from, those skilled in the art can make
Go out various modifications or remodeling.
Claims (2)
1. a kind of phase-shifting full-bridge translation circuit control method, it is characterised in that phase-shifting full-bridge translation circuit includes：
One transformer T1；
One leading-bridge, is composed in series, the tie point a of the two metal-oxide-semiconductors passes sequentially through electricity by the Q1 of metal-oxide-semiconductor one and the Q2 of metal-oxide-semiconductor two
Hold C1 and resonant inductance L1 to be connected with one end of transformer T1 primary sides, the electric capacity C1 and resonant inductance L1 are serially connected；
One lagging leg, is composed in series by the Q3 of metal-oxide-semiconductor three and the Q4 of metal-oxide-semiconductor four, the tie point b and transformer T1 of the two metal-oxide-semiconductors
The other end connection of primary side；
The DC voltage Vin of input is added in the Q1 of the metal-oxide-semiconductor one and Q3 of metal-oxide-semiconductor three tie point with the Q2's of the metal-oxide-semiconductor two and Q4 of metal-oxide-semiconductor four
Between tie point；
One output circuit, is made up of four commutation diodes D1, D2, D3, D4 and output capacitance C2；The two of the output capacitance C2
Hold the DC voltage Vo for output；
In the output circuit, one end of the transformer T1 secondary sides and commutation diode D1 and commutation diode D2 connection
Point connection, the other end of the transformer T1 secondary sides is connected with commutation diode D3 and commutation diode D4 tie point, institute
The tie point for stating commutation diode D1 and D3 is connected with output capacitance C2 one end, the tie point of the commutation diode D2 and D4
It is connected with the output capacitance C2 other end；
Also, 1) primary side of transformer is full bridge structure and is serially connected with electric capacity and resonant inductance, the full bridge structure is 4 MOS
Pipe is constituted；2) the primary side voltage peak value of transformer is the half of busbar voltage；3) the primary side voltage duty of transformer
Than less than 50%；4) secondary side of transformer is diode rectification structure；
One work period of the phase-shifting full-bridge translation circuit was divided into such as the next stage：Wherein, G1, G2, G3, G4 are respectively
Metal-oxide-semiconductor one arrives the Q1-Q4 of metal-oxide-semiconductor four Applied gate voltages, and iL is transformer primary side resonant inductance L1 electric current, and VL is humorous for this
Shake inductance L1 voltage, and VT is the voltage of transformer T1 primary sides, Vin for input DC voltage, Vo for output direct current
Pressure；
The T1 stages：G1 and G4 is simultaneously high level, now Q1 and Q4 ON operations, and the voltage VT of transformer T1 primary sides is secondary
The voltage clamping of side is now added in the voltage constant at resonant inductance L1 two ends in Vin-nVo, resonant inductance L1 electric current in nVo
IL linear rises, transformer T1 primary side currents are linearly increasing, while exporting energy to transformer T1 secondary side；The T1 stages tie
Shu Shi, Q1 are turned off, now because resonant inductance L1 electric current can not change, so continuing to flow by former direction, Q2 drain source capacitance
Electric discharge, Q1 drain source capacitance charging, when Q2 drain source capacitance is discharged to negative pressure, Q2 conductings realize Q2 no-voltage conducting, i.e.,
It is the transformer primary secondary turn ratio to realize ZVS, wherein n；
The T2 stages:G2 and G4 is simultaneously high level, Q2 and Q4 conductings, and resonant inductance L1 electric current iL presses former direction flowing；Now
The voltage VL at resonant inductance L1 two ends is just equal but anti-relative to T1 stage voltages with the voltage VT of transformer T1 primary sides
To resonant inductance L1 electric current iL is linearly reduced to 0 from maximum, while the voltage VT of transformer T1 primary sides is reduced to 0, transformation
The commutation diode zero-current switching of device T1 secondary sides；
The T3 stages：G2 and G4 remain unchanged while for high level, Q4 and Q2 are simultaneously conducting state, and now transformer T1 primary sides do not have
Electric current；At the end of the T3 stages, G2 is changed into Q3 after low level, Q4 zero voltage turn-offs, interval dead time and turned on when different with G4, because
Main circuit has inductance L1 to seal in when Q3 is turned on, and inductive current can not be mutated, from 0 linear rise, so Q3 is zero current passing,
Realize ZCS；
The T4 stages:G2 and G3 is simultaneously high level, and Q2 and Q3 are simultaneously turned on, and the voltage VT of transformer T1 primary sides is by secondary side
Voltage clamping is now added in the voltage constant at resonant inductance L1 two ends in Vin-nVo, resonant inductance L1 electric current iL lines in nVo
Property rise, transformer primary side current is linearly increasing, while exporting energy to transformer T1 secondary side.
2. the phase-shifting full-bridge translation circuit that the control method described in claim 1 is applicable, it is characterised in that it must simultaneously meet
Following condition：
1) primary side of transformer is full bridge structure and is serially connected with electric capacity and resonant inductance, and the full bridge structure is 4 metal-oxide-semiconductor groups
Into；
2) the primary side voltage peak value of transformer is the half of busbar voltage；
3) the primary side voltage duty cycle of transformer is less than 50%；
4) secondary side of transformer is diode rectification structure；
5) the storage energy of the resonant inductance is the 1/2 of output energy；
And the phase-shifting full-bridge translation circuit includes：
One transformer T1；
One leading-bridge, is composed in series, the tie point a of the two metal-oxide-semiconductors passes sequentially through electricity by the Q1 of metal-oxide-semiconductor one and the Q2 of metal-oxide-semiconductor two
Hold C1 and resonant inductance L1 to be connected with one end of transformer T1 primary sides, the electric capacity C1 and resonant inductance L1 are serially connected；
One lagging leg, is composed in series by the Q3 of metal-oxide-semiconductor three and the Q4 of metal-oxide-semiconductor four, the tie point b and transformer T1 of the two metal-oxide-semiconductors
The other end connection of primary side；
The DC voltage Vin of input is added in the Q1 of the metal-oxide-semiconductor one and Q3 of metal-oxide-semiconductor three tie point with the Q2's of the metal-oxide-semiconductor two and Q4 of metal-oxide-semiconductor four
Between tie point；
One output circuit, is made up of four commutation diodes D1, D2, D3, D4 and output capacitance C2；The two of the output capacitance C2
Hold the DC voltage Vo for output；
In the output circuit, one end of the transformer T1 secondary sides and commutation diode D1 and commutation diode D2 connection
Point connection, the other end of the transformer T1 secondary sides is connected with commutation diode D3 and commutation diode D4 tie point, institute
The tie point for stating commutation diode D1 and D3 is connected with output capacitance C2 one end, the tie point of the commutation diode D2 and D4
It is connected with the output capacitance C2 other end.
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| CN104967318A (en) * | 2015-05-28 | 2015-10-07 | 东华大学 | Impressed cathode current protection power supply |
| CN106558993A (en) * | 2015-09-30 | 2017-04-05 | 株式会社村田制作所 | DC/DC conversion equipments |
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