CN100414587C - Flat panel display - Google Patents

Flat panel display Download PDF

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Publication number
CN100414587C
CN100414587C CNB2005101156041A CN200510115604A CN100414587C CN 100414587 C CN100414587 C CN 100414587C CN B2005101156041 A CNB2005101156041 A CN B2005101156041A CN 200510115604 A CN200510115604 A CN 200510115604A CN 100414587 C CN100414587 C CN 100414587C
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pixel
driving circuit
flat
pixel electrode
panel monitor
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CN1773591A (en
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徐美淑
姜泰旭
李乙浩
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Samsung Display Co Ltd
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Samsung SDI Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G09G2300/0861—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0223—Compensation for problems related to R-C delay and attenuation in electrodes of matrix panels, e.g. in gate electrodes or on-substrate video signal electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A flat panel display with good color mixture of three primary colors to achieve different hues and little signal delay is provided. The display includes signal lines including scan lines (S) and data lines intersecting the scan lines, both arranged along straight lines. Red, green, and blue pixel driving circuit regions are defined by the intersection of the scan lines and the data lines. The pixel driving circuit regions having the same color are arranged adjacent to one another along a column direction. Red, green, and blue pixel driving circuits are placed in the pixel driving circuit regions and are coupled to the red, green, and blue pixel electrodes. The pixel electrodes are adjacent to pixel electrodes of a different color along both row and column directions.

Description

Flat-panel monitor
The application requires the right of priority and the interests of the 2004-0090603 korean patent application of submission on November 8th, 2004, and its full content is contained in this by reference.
Technical field
The present invention relates to a kind of flat-panel monitor, more particularly, relate to a kind of full color flat-panel monitor.
Background technology
Because flat-panel monitor is in light weight, structure is thin, picture quality is better, it is considered to the substitute of cathode-ray tube display.The example of flat-panel monitor comprises LCD (LCD) and organic light emitting display (OLED).Compare with LCD, OLED has higher brightness and bigger visual angle, and does not need backlightly, and this makes OLED have advantage in realizing thin display.
Flat-panel monitor comprises the red, green, blue pixel that is used to realize the full color demonstration.Red, green and blue pixel can be formed on stripe-arrangement, mosaic (mosaic) shape and arrange or " △ " (delta) in the array that shape is arranged.The arrangement of " △ " shape is arranged in the trichromatic color of mixing with the mosaic shape and all is better than stripe-arrangement to obtain different color aspects, thereby " △ " shape is arranged and the mosaic shape is arranged the picture that is more suitable for showing motion.The 6th, 429, in No. 599 United States Patent (USP)s OLED with pel array of arranging by " △ " shape is disclosed.
Fig. 1 is a disclosed planimetric map with OLED of the pel array of arranging by " △ " shape in the above-mentioned United States Patent (USP).In this drawing, red (R), green (G), blue (B) pixel are arranged by " △ " shape.In the array with stripe-arrangement, the pixel of adjacent lines is in line, thus all R pixels along identical row, all G pixels are along identical row, all B pixels are along identical row.On the other hand, in " △ " shape was arranged, the pixel of adjacent lines was interlocked, thereby the R pixel of adjacent two row of the B pixel of delegation and this row and G pixel form triangle, or " △ " shape.Each R pixel, G pixel, and the B pixel comprise the pixel electrode 7 of the first film transistor (TFT) 4, capacitor 5, the 2nd TFT 6 and light emitting diode.In addition, data line 1 and gate line 3 are attached to a TFT 4, and power lead 2 is attached to the 2nd TFT6.
As mentioned above, in " △ " shape is arranged, each R pixel of delegation, G pixel, and the B pixel be adjacent to other two colored pixels settings of adjacent lines, thereby the pixel of the same color from a pixel to adjacent column produces Z word path.The data line 1 that extends on overall column direction is attached to a TFT 4 of same color pixel along this Z word path.Z word path has increased the resistance of data line 1, has postponed data-signal.And power lead 2 also extends along Z word path.Thereby the resistance of power lead 2 also has been increased, and this can cause voltage to descend along power lead.Data-signal can worsen image quality along the delay and the voltage of data line 1 along power lead 2 declines, and this increase along with display size displays as a serious problem.In addition, so complicated interconnection topology has increased the occupied space that interconnects, and this causes reducing of aperture ratio.
Summary of the invention
The three primary colors blend of colors that the problem of the present invention by providing a kind of flat-panel monitor to solve conventional apparatus, this flat-panel monitor have an improvement to be obtaining different colors, and do not have signal delay or voltage to descend.
In exemplary embodiment of the present invention, flat-panel monitor comprises substrate and the signal wire that is arranged on the substrate.The pixel-driving circuit zone is limited by the interconnection of signal wire.Pixel-driving circuit is arranged in the pixel-driving circuit zone.Pixel electrode is attached to each pixel-driving circuit, and stacked with a signal wire at least.Described pixel electrode is formed by reflective conductive layer.
In another exemplary embodiment of the present invention, flat-panel monitor comprises substrate and the signal wire that is arranged on the substrate.The pixel-driving circuit zone is limited by the interconnection of signal wire.Pixel-driving circuit is arranged in the pixel-driving circuit zone.Pixel electrode is attached to pixel-driving circuit.The arrangement of pixel electrode is different with the arrangement in pixel-driving circuit zone.Described pixel electrode is formed by reflective conductive layer.
In an exemplary embodiment more of the present invention, flat-panel monitor comprises substrate and the signal wire that is arranged on the substrate.At least some signal wires comprise sweep trace and data line, and data line intersects with sweep trace and along line spread.The pixel-driving circuit zone is limited by the intersection of sweep trace and data line.Pixel-driving circuit is arranged in the pixel-driving circuit zone.Pixel electrode is attached to pixel-driving circuit.Pixel electrode follows or column direction is adjacent to the pixel electrode of different colours.Described pixel electrode is formed by reflective conductive layer.
In another exemplary embodiment of the present invention, flat-panel monitor comprises substrate and the signal wire that is arranged on the substrate.At least some signal wires comprise sweep trace and data line, and data line intersects with sweep trace and along line spread.Red, green, blue pixel-driving circuit zone is limited by the intersection of sweep trace and data line.Arrange along column direction with being adjacent to another in one in pixel-driving circuit zone corresponding to same color.Red, green and blue pixel-driving circuit is arranged in the pixel-driving circuit zone.The red, green, blue pixel electrode is attached to the red, green, blue pixel-driving circuit respectively.Each pixel electrode follows the pixel electrode that is adjacent to different colours with column direction.Described pixel electrode is formed by reflective conductive layer.
Description of drawings
Fig. 1 is the planimetric map with traditional OLED of the pel array of arranging with " △ " shape.
Fig. 2 is at the circuit diagram according to the pixel-driving circuit among the OLED of first embodiment of the invention.
Fig. 3 is the planimetric map according to the pel array of the OLED of first embodiment of the invention.
Fig. 4 A and Fig. 4 B are according to the OLED of the first embodiment of the invention sectional view along the intercepting of the line I-I ' among Fig. 3.
Fig. 5 is at the circuit diagram according to the pixel-driving circuit among the OLED of second embodiment of the invention.
Fig. 6 is at the circuit diagram according to the pixel-driving circuit among the OLED of third embodiment of the invention.
Embodiment
During below accompanying drawing is described, representing that this layer is formed directly on the described different layers or is formed directly on the substrate on the different layers or at cambium layer on the substrate.Yet it also can be illustrated in and have other layer between formed layer and described different layers or the substrate.
Fig. 2 is at the circuit diagram according to the pixel-driving circuit 100a among the OLED of first embodiment of the invention.Each pixel-driving circuit 100a is attached to signal wire, and signal wire comprises sweep trace S, data line D R, D G, D BAnd power lead ELVDD.Data line D R, D G, D BComprise red data line D R, green data line D G, and blue data line D BRed, green, blue data line D R, D G, D BS intersects with sweep trace, thereby limits red pixel P R, green pixel P G, and blue pixel P BRed, green, blue data line D R, D G, D BBe attached to red pixel P respectively R, green pixel P G, and blue pixel P BThereby the data-signal with particular color (red, green, blue) is sent to the data line D corresponding to same color R, D G, D BEasier being driven of circuit that pixel-driving circuit 100a is transmitted by identical data line than the data-signal corresponding to different colours.
Pixel comprises red, green, blue light emitting diode E R, E G, E BBe used for driven for emitting lights diode E R, E G, E BPixel-driving circuit 100a.Pixel-driving circuit 100a has switching transistor M1a, capacitor Csta and driving transistors M2a.Switching transistor M1a has the grid that is attached to sweep trace S and is attached to data line D R, D G, D BSource electrode, thereby come switch to be applied to data line D based on the sweep signal that is applied to sweep trace S R, D G, D BData-signal.Capacitor Csta is combined between the drain electrode of switching transistor M1a and the power lead ELVDD with the storing predetermined length of the data-signal time.Driving transistors M2a has the grid that is attached to capacitor Csta, is attached to the source electrode of power lead ELVDD and is attached to each light emitting diode E R, E G, E BDrain electrode, thereby will be fed to each light emitting diode E corresponding to the electric current of data-signal R, E G, E BEach light emitting diode E R, E G, E BCorresponding to the galvanoluminescence of being supplied.
Fig. 3 is the planimetric map according to the pel array 200a of the OLED of first embodiment of the invention, wherein identical label represent with Fig. 2 in components identical.Signal wire comprises the sweep trace S that is arranged on the substrate, data line D R, D G, D BAnd power lead ELVDD.Each sweep trace S extends along first direction.Data line D R, D G, D BComprise red data line D R, green data line D G, and blue data line D BEach data line D R, D G, D BExtend with the second direction that first direction intersects on the edge.As sweep trace S and data line D R, D G, D BWhen extending along the direction that intersects, they are insulated from each other.Power lead ELVDD also insulate when intersecting with sweep trace S.The orientation of power lead ELVDD and data line D R, D G, D BOrientation identical.
The pixel-driving circuit zone C R, C G, C BLimit by signal wire, specifically, the pixel-driving circuit zone C R, C G, C BBy sweep trace S intersected with each other and data line D R, D G, D BLimit.In this embodiment, pixel-driving circuit zone C R, C G, C BRefer to be provided for control and be applied to light emitting diode E R, E G, E BThe zone of pixel-driving circuit 100a of signal.Thereby, the pixel-driving circuit zone C R, C G, C BIt is the zone of placing all elements of the pixel-driving circuit 100a shown in Fig. 2.Light emitting diode E R, E G, E BBe not positioned at the pixel-driving circuit zone C R, C G, C BOn.
In the pixel-driving circuit zone C R, C G, C BIn, the zone with same color is adjacent to arrange along column direction.For example, red pixel-driving circuit zone C RPut along identical row.In other words, pixel-driving circuit zone C R, C G, C BHave banded the arrangement.Thereby, be attached to the data line D of the pixel of respective color in turn R, D G, D BAlso can be along line spread.The z word line of this and Fig. 1 has formed contrast.In structure shown in Figure 3, shortened each data line D R, D G, D BLength, reduced data line resistance, thereby prevented to be applied to each data line D R, D G, D BData-signal be delayed.Power lead ELVDD also can be along line spread.Thereby, also reduced the line resistance of power lead ELVDD and prevented to be fed to the reduction of the voltage of power lead ELVDD.Therefore, improved image quality.In addition, reduced by data line D R, D G, D BThe zone that occupies with power lead ELVDD, thereby improved the aperture ratio.
Red, green, blue pixel-driving circuit 100a lays respectively at red, green, blue pixel-driving circuit zone C R, C G, C BOn.Each pixel-driving circuit 100a comprises switching transistor M1a, capacitor Csta and driving transistors M2a.Red, green, blue pixel-driving circuit 100a is attached to red, green, blue pixel electrode 140R, 140G, 140B respectively.More particularly, the drain electrode 130a of driving transistors M2a is attached to each pixel electrode 140R, 140G, 140B.Opening in each pixel electrode 140R, 140G, 140B is defined as the luminous zone, and wherein, opening refers to the 145a among Fig. 4 B.Organic emission layer and comparative electrode are positioned at the opening top of each pixel electrode 140R, 140G, 140B in turn.Pixel electrode 140R, 140G, 140B, organic emission layer and comparative electrode are formed light emitting diode E R, E G, E B
The arrangement of pixel electrode 140R, 140G, 140B and pixel-driving circuit zone C R, C G, C BThe arrangement difference.Each pixel electrode 140R, 140G, the pixel electrode that 140B follows is adjacent to different colours with column direction are arranged.For example, red pixel electrode 140R follows with column direction and is adjacent to green pixel electrode 140G and blue pixel electrode 140B arrangement, arranges and be not adjacent to another red pixel electrode 140R.For illustrative purposes, if we suppose that the middle row among Fig. 3 is an odd-numbered line, pixel electrode 140R, 140G, the 140B in odd-numbered line is positioned at the pixel-driving circuit zone C so R, C G, C BThe right, pixel electrode 140R, 140G in even number line, 140B are positioned at the pixel-driving circuit zone C R, C G, C BThe left side.This causes pixel electrode 140R, the 140G among Fig. 3, " △ " shape of 140B to be arranged." △ " shape is arranged and has been improved trichromatic blend of colors to obtain different colors, has promoted image quality.Therefore, when signal wire when straight line extends, pixel electrode 140R, 140G, 140B can arrange with " △ " shape and put, " △ " shape is arranged and is realized effective blend of colors.The pixel-driving circuit zone C R, C G, C BThe length that follows direction is corresponding with a pitch.In one embodiment, consider blend of colors, pixel electrode 140R, 140G, 140B are positioned at the pixel-driving circuit zone C with 0.5 pitch to 1.5 pitches R, C G, C BThe left side or the right.Preferred 0.75 pitch.The stacked at least part of pixel electrode 140R, 140G, 140B and signal wire.
As mentioned above, the pixel-driving circuit zone C that has same color R, C G, C BBe adjacent to be provided with along column direction, simultaneously pixel electrode 140R, 140G, 140B follow the pixel electrode setting that direction and column direction are adjacent to different colours, thereby have signal delay ground to realize trichromatic blend of colors obtaining different colors, thereby improved image quality.
Fig. 4 A and Fig. 4 B are according to the OLED of the first embodiment of the invention sectional view along the intercepting of the line I-I ' among Fig. 3.
Fig. 4 A illustrates has red pixel-driving circuit zone C R, green pixel drive circuit area C G, blue pixel-driving circuit zone C BSubstrate 100.Substrate 100 can be transparent substrate or opaque substrate.In addition, substrate 100 can be glass substrate, plastic, quartz substrate, silicon substrate or metal substrate.Can on substrate 100, form cushion 105.Cushion 105 can comprise the multiple stratification compound of silicon oxide layer, silicon-nitride layer, silicon oxynitride layer or above-mentioned material.
Semiconductor layer 110 is formed on the cushion 105.Semiconductor layer 110 can comprise amorphous silicon layer or from the polysilicon layer of amorphous silicon layer crystallization.In one embodiment, semiconductor layer 110 comprises the polysilicon layer with high mobility.Gate insulation layer 115 is formed on the semiconductor layer 110.Gate insulation layer 115 comprises the multiple stratification compound of silicon oxide layer, silicon-nitride layer, silicon oxynitride layer or above-mentioned material.
Gate electrode 120 is formed on the gate insulation layer 115, and the zone that forms gate electrode 120 just semiconductor layer 110 be positioned at zone below the gate insulation layer 115.When forming gate electrode 120, also can form sweep trace S (referring to Fig. 3).Then, form source region 110c and drain region 110a by utilizing gate electrode 120 conductive impurity to be injected semiconductor layer 110 as mask.Channel region 110b is limited between source region 110c and the drain region 110a.First inner insulating layer 125 is formed on gate electrode 120 and the semiconductor layer 110.In addition, pass first inner insulating layer 125 and form contact hole to expose source region 110c and drain region 110a.Conductive layer is deposited on the substrate with contact hole, and composition is to form source electrode 130c, drain electrode 130a, data line D then R, D G, D BAnd power lead ELVDD.Source electrode 130c contacts with drain region 110a with the source region 110c that exposes respectively with drain electrode 130a.Therefore, formed driving transistors M2a (referring to Fig. 3) by semiconductor layer 110, gate electrode 120, source electrode 130c and drain electrode 130a.
Second inner insulating layer 133,135 is formed on the substrate with source electrode 130c, drain electrode 130a.Second inner insulating layer 133,135 can be that passivation layer 133, planarization layer 135 or planarization layer 135 are deposited on the bilayer on the passivation layer 133.Passivation layer 133 can or comprise that the multilayer of the combination of above-claimed cpd forms by silicon oxide layer, silicon-nitride layer, silicon oxynitride layer.In one embodiment; passivation layer 133 comprises silicon-nitride layer; this silicon-nitride layer can protect following thin film transistor (TFT) not to be subjected to gas and the moist damage of invading effectively, and contains a large amount of hydrogen, and hydrogen is used for the incomplete key at place, grain boundary of passivation polysilicon layer.Planarization layer 135 is that it is used to following surface that smooth coverture is provided such as (BCB) organic layer of layer, polyimide layer, polyacrylic acid layer of benzocyclobutene (benzocyclobutene).Pass second inner insulating layer 133,135 and form through hole 135a to expose drain electrode 130a.
Referring to Fig. 4 B, each is formed on pixel electrode 140R, 140G, 140B on the substrate with having a through hole 135a.In the illustrated embodiment, pixel electrode 140R, 140G, 140B are formed on second inner insulating layer 133,135.Pixel electrode 140R, 140G, 140B are attached to the drain electrode 130a that exposes by through hole 135a.
As mentioned above, the arrangement of pixel electrode 140R, 140G, 140B and pixel-driving circuit zone C R, C G, C BThe arrangement difference.In more detail, pixel electrode 140R, 140G, 140B are arranged in the pixel-driving circuit zone C R, C G, C BThe left side.Pixel electrode 140R, 140G, 140B are attached to the pixel-driving circuit zone C R, C G, C BDrain electrode 130a.Each pixel electrode 140R, 140G, 140B are formed at least some signal wires, for example data line D R, D G, D BAnd power lead ELVDD, on.In one embodiment, be formed at pixel electrode 140R, 140G, 140B and data line D R, D G, D BBetween the thickness T of second inner insulating layer 133,135 1Perhaps be formed at the thickness T of second inner insulating layer 133,135 between pixel electrode 140R, 140G, 140B and the power lead ELVDD 2Can be 5000
Figure C20051011560400111
Or it is bigger.Owing to have big relatively isolation, so can make pixel electrode 140R, 140G, 140B and data line D R, D G, D BBetween stray capacitance and the stray capacitance between pixel electrode 140R, 140G, 140B and the power lead ELVDD minimize.Preferably, consider the depth-to-width ratio of through hole 135a, these thickness T 1, T 2, promptly the thickness of second inner insulating layer 133,135 can be 5000
Figure C20051011560400112
To 3 μ m (30,000
Figure C20051011560400113
).
Pixel electrode 140R, 140G, 140B are made by reflective conductive layer, and reflective conductive layer can comprise Ag, Al, Ni, Pt, the Pd with high work function, or the alloy of these elements.In this case, pixel electrode 140R, 140G, 140B are as anode.In addition, reflective conductive layer can comprise the alloy of Mg, Ca, Al, Ag, Ba or these elements with low work function.In this case, pixel electrode 140R, 140G, 140B are as negative electrode.
On the other hand, reflection layer pattern 139 can be formed on below pixel electrode 140R, 140G, the 140B before forming pixel electrode 140R, 140G, 140B in addition.In this case, pixel electrode 140R, 140G, 140B must be made by transparency conducting layer.Transparency conducting layer comprises tin indium oxide (ITO) layer or indium zinc oxide (IZO) layer.In one embodiment, reflection layer pattern 139 can have 60% or bigger reflectivity.In addition, reflection layer pattern 139 comprises Al, aluminium alloy, Ag, silver alloy or contains the alloy of arbitrary composition of these metals and alloy.Reflection layer pattern 139 can be separated with through hole 135a.
Pixel limits layer 145 and is formed on pixel electrode 140R, 140G, the 140B.Pixel limit layer 145 can by benzocyclobutene (benzocyclobutene) (BCB), based on the photoresist (acrylic-based photoresist) of acrylic acid, form based on the photoresist (phenolic-basedphotoresist) of phenol or based on the photoresist (imide-based photoresist) of acid imide.Opening 145a is formed on pixel and limits in the layer 145 to expose one part of pixel electrode 140R, 140G, 140B at least.
Rubescent photosphere 150R, greening photosphere 150G, the photosphere 150B that turns blue are formed on the red, green, blue pixel electrode 140R that exposes by opening 145a, 140G, the 140B.Can form each luminescent layer by vacuum deposition method, ink jet printing method and laser induced thermal imaging method.In addition, hole injection layer, hole transmission layer, hole blocking layer, electron transfer layer or electron injecting layer (not shown) can be formed on going up of luminescent layer 150R, 150G, 150B or following.Then, comparative electrode 160 is formed on luminescent layer 150R, 150G, the 150B.Comparative electrode 160 can be formed on the entire substrate.Comparative electrode 160 can be formed by transparency conducting layer.Transparency conducting layer can be ITO layer or IZO layer, perhaps can comprise the element selected from Mg, Ca, Al, Ag, this group element of Ba or arbitrary alloy of these elements, and this element or alloy-layer are enough thin, so that transmittance.
Pixel electrode 140R, 140G, 140B, luminescent layer 150R, 150G, 150B and comparative electrode 160 form light emitting diode E respectively R, E G, E BLight emitting diode E R, E G, E BLuminous zone ER R, ER G, ER B145a limits by opening.
As driven for emitting lights diode E R, E G, E BDuring work, hole and electronics are injected into luminescent layer 150R, 150G, the 150B from pixel electrode and comparative electrode.Then, the electronics and the hole that are injected among luminescent layer 150R, 150G, the 150B are compound in luminescent layer 150R, 150G, 150B, thereby produce exciton.When exciton when excited state transits to ground state, emission light.Reflect (in this case by pixel electrode 140R, 140G, 140B from the light of luminescent layer 150R, 150G, 150B emission, pixel electrode 140R, 140G, 140B are made by reflective conductive layer), perhaps 139 reflections of the reflection layer pattern below pixel electrode 140R, 140G, 140B (in this case, pixel electrode 140R, 140G, 140B are made by transparency conducting layer), be transmitted into the outside by the comparative electrode of making by transparency conducting layer 160 then.
Fig. 5 is at the circuit diagram according to the pixel-driving circuit 100b among the OLED of second embodiment of the invention.(n-1) sweep trace S (n-1), (n) sweep trace S (n), data line D, power lead ELVDD and pre-charge line Vint are attached to pixel-driving circuit 100b.Pixel P is limited by data line D that intersects and sweep trace S (n).Pixel P comprises light emitting diode E and is used for the pixel-driving circuit 100b of driven for emitting lights diode E that wherein light emitting diode E can be red, green, blue light emitting diode E R, E G, E BIn any.Depend on light emitting diode E R, E G, E BWith data line D, pixel P can be red, green or blue pixel P R, P G, P B, wherein data line D can be red, green or blue data line D R, D G, D BPixel-driving circuit is made up of first to the 4th transistor M1b, M2b, M3b, M4b and capacitor Cstb.
The first transistor M1b comprises grid that are attached to sweep trace S (n) and the source that is attached to data line D.The 3rd transistor M3b comprises the source of the leakage that is attached to the first transistor M1b and grid that combine each other and leakage.The source of the leakage that the 4th transistor M4b comprises the grid that are attached to (n-1) sweep trace S (n-1), be attached to the 3rd transistor M3b and be attached to the leakage of pre-charge line Vint.Transistor seconds M2b comprise the grid that are attached to the 3rd transistor M3b grid, be attached to the source of power lead ELVDD and be attached to the leakage of light emitting diode E.Capacitor Cstb is combined between the grid and power lead ELVDD of the 3rd transistor M3b.Can be red, green, blue light emitting diode E R, E G, E BIn any light emitting diode E comprise pixel electrode, comparative electrode and place pixel electrode and comparative electrode between luminescent layer.The pixel electrode of light emitting diode E, comparative electrode and luminescent layer and be used for the light emitting diode E of the first embodiment 100a R, E G, E BAt pixel electrode 140R, 140G, the 140B shown in Fig. 4 B, comparative electrode 160, similar with luminescent layer 150R, 150G, 150B.
Having among pixel layout and Fig. 3 of OLED of above-mentioned pixel-driving circuit 100b according to second embodiment of the invention is that the pixel layout shown in the first embodiment 100a is similar.But, in the pixel-driving circuit 100b of second embodiment, be expert at or column direction on increased pre-charge line Vint, and also increased the 3rd transistor M3b and the 4th transistor M4b.First to the 4th transistor M1b, M2b, M3b, M4b and the capacitor Cstb of the second embodiment 100b are arranged in the pixel-driving circuit zone, the pixel-driving circuit zone C of first embodiment shown in this pixel-driving circuit zone and Fig. 3 R, C G, C BSimilar.Pixel electrode (similar to pixel electrode 140R, 140G, the 140B of first embodiment) can be stacked with pre-charge line Vint.
Fig. 6 is at the circuit diagram according to the pixel-driving circuit 100c among the OLED of third embodiment of the invention.The signal wire that comprises sweep trace S (n), data line D, power lead ELVDD and light emitting control line EM (n) is attached to pixel-driving circuit 100c.Data line D and sweep trace S (n) are intersected with each other, limit pixel P.Pixel P comprises it can being red, green, blue light emitting diode E R, E G, E BIn any light emitting diode E and be used for the pixel-driving circuit 100c of driven for emitting lights diode E.Pixel-driving circuit 100c comprises first to the 3rd transistor M1c, M2c, M3c and capacitor Cstc.
The first transistor M1c comprises the grid that are attached to sweep trace S and is attached to the source of data line D.Transistor seconds M2c comprises the grid of the leakage that is attached to the first transistor M1c and is attached to the source of power lead ELVDD.Capacitor Cstc is combined between the grid and power lead ELVDD of transistor seconds M2c.The source of the leakage that the 3rd transistor M3c comprises the grid that are attached to light emitting control line EM (n), be attached to transistor seconds M2c and be attached to the leakage of light emitting diode E.Light emitting diode E comprise pixel electrode, comparative electrode and place pixel electrode and comparative electrode between luminescent layer.The pixel electrode of light emitting diode E, comparative electrode and luminescent layer and be used for the light emitting diode E of the first embodiment 100a R, E G, E BAt pixel electrode 140R, 140G, the 140B shown in Fig. 4 B, comparative electrode 160, similar with luminescent layer 150R, 150G, 150B.
Except be expert at or column direction on add light emitting control line EM (n), the pixel layout of OLED with above-mentioned pixel-driving circuit 100c according to third embodiment of the invention is identical with the pixel layout shown in Fig. 3, and the first to the 3rd transistor M1c, M2c, M3c and capacitor Cstc are positioned at the pixel-driving circuit zone (with the pixel-driving circuit zone C of first embodiment shown in Fig. 3 R, C G, C BSimilar) in.Pixel electrode (similar to pixel electrode 140R, 140G, the 140B of first embodiment) can be stacked with light emitting control line EM (n).
In this instructions, the embodiment of OLED describes by way of example.The present invention also can be applicable to LCD, particularly utilizes the reflection type LCD of exterior light.
As mentioned above, the pixel-driving circuit zone C that has same color R, C G, C BBe adjacent to arrange along column direction, and each pixel electrode 140R, 140G, 140B follow direction and column direction is adjacent to pixel electrode 140R, 140G, the 140B arrangement with different colours, this arrangement has signal delay ground or has the voltage ground that descends to realize trichromatic blend of colors obtaining different colors, and realizes good image quality.
Though described the present invention with reference to some exemplary embodiment, it should be appreciated by those skilled in the art that under situation about not breaking away from by claim and the spirit or scope of the present invention that equivalent limited thereof, can make various modifications and variations to the present invention.

Claims (26)

1. flat-panel monitor comprises:
Substrate;
Signal wire is arranged on the described substrate;
Pixel-driving circuit is arranged in the pixel-driving circuit zone that is limited by the intersection of described signal wire; With
Pixel electrode is attached to each pixel-driving circuit and stacked with one of described signal wire at least,
Wherein, described pixel electrode is formed by reflective conductive layer.
2. flat-panel monitor as claimed in claim 1, wherein, described pixel electrode is pressed the first order arranged in patterns, and described pixel-driving circuit is pressed the second order arranged in patterns, and described first order pattern is different with described second order pattern.
3. flat-panel monitor as claimed in claim 1 wherein, is adjacent to arrange along column direction corresponding to the pixel-driving circuit zone of same color.
4. flat-panel monitor as claimed in claim 3, wherein, described pixel electrode is pressed the first order arranged in patterns, and described pixel-driving circuit is pressed the second order arranged in patterns, and described first order pattern is different with described second order pattern.
5. flat-panel monitor as claimed in claim 4, wherein, a kind of color pixel electrode follows the pixel electrode that is adjacent to different colours with column direction.
6. flat-panel monitor as claimed in claim 5, wherein, described pixel electrode is arranged by " △ " shape.
7. flat-panel monitor as claimed in claim 1, wherein, described signal wire comprises sweep trace and the data line that intersects with described sweep trace, described sweep trace and described data line extend along straight line.
8. flat-panel monitor as claimed in claim 7, wherein, described signal wire also comprises and intersecting with described sweep trace and along linearly extended power lead.
9. flat-panel monitor as claimed in claim 1 also comprises the insulation course between one of described at least signal wire and described pixel electrode, and described insulation course has
Figure C2005101156040002C1
Or bigger thickness.
10. flat-panel monitor as claimed in claim 9, wherein, the described insulation course between one of described at least signal wire and described pixel electrode has 3 μ m or littler thickness.
11. flat-panel monitor as claimed in claim 1, wherein, described flat-panel monitor is an organic light emitting display.
12. a flat-panel monitor comprises:
Substrate;
Signal wire is arranged on the described substrate;
The pixel-driving circuit zone is limited by the intersection of described signal wire;
Pixel-driving circuit is arranged in described pixel-driving circuit zone; With
Pixel electrode is attached to described pixel-driving circuit, and wherein, described pixel electrode is pressed the first order arranged in patterns, and described pixel-driving circuit is pressed the second order arranged in patterns, and described first order pattern is different with described second order pattern,
Wherein, described pixel electrode is formed by reflective conductive layer.
13. flat-panel monitor as claimed in claim 12 wherein, is adjacent to arrange along column direction corresponding to the pixel-driving circuit zone of same color.
14. flat-panel monitor as claimed in claim 12, wherein, described pixel electrode follows the pixel electrode that is adjacent to different colours with column direction.
15. flat-panel monitor as claimed in claim 14, wherein, described pixel electrode is arranged by " △ " shape.
16. flat-panel monitor as claimed in claim 12, wherein, described signal wire comprises sweep trace and the data line that intersects with described sweep trace, and described sweep trace and described data line extend along straight line.
17. flat-panel monitor as claimed in claim 16, wherein, described signal wire also comprises and intersecting with described sweep trace and along linearly extended power lead.
18. flat-panel monitor as claimed in claim 12, wherein, described flat-panel monitor is an organic light emitting display.
19. a flat-panel monitor comprises:
Substrate;
Signal wire is arranged on the described substrate, and described signal wire comprises sweep trace and the data line that intersects with described sweep trace, and described sweep trace and described data line extend along straight line;
The pixel-driving circuit zone is limited by the intersection of described sweep trace and described data line;
Pixel-driving circuit is arranged in described pixel-driving circuit zone; With
Pixel electrode is attached to described pixel-driving circuit, and described pixel electrode is adjacent to the pixel electrode of different colours along the direction of row and column,
Wherein, described pixel electrode is formed by reflective conductive layer.
20. flat-panel monitor as claimed in claim 19, wherein, described signal wire comprises and intersecting with described sweep trace and along linearly extended power lead.
21. flat-panel monitor as claimed in claim 19, wherein, the pixel-driving circuit zone of same color is adjacent to arrange along column direction.
22. flat-panel monitor as claimed in claim 19, wherein, described pixel electrode is arranged by " △ " shape.
23. flat-panel monitor as claimed in claim 19, wherein, described flat-panel monitor is an organic light emitting display.
24. a flat-panel monitor comprises:
Substrate;
Signal wire is arranged on the described substrate, and described signal wire comprises sweep trace and the data line that intersects with described sweep trace, and described sweep trace and described data line extend along straight line;
Red, green, blue pixel-driving circuit zone is limited by the intersection of described sweep trace and described data line, and the pixel-driving circuit zone of same color is adjacent to arrange along column direction in described pixel-driving circuit zone;
The red, green, blue pixel-driving circuit lays respectively in the described red, green, blue pixel-driving circuit zone; With
The red, green, blue pixel electrode is attached to described red, green, blue pixel-driving circuit respectively, and described red, green, blue pixel electrode is adjacent to the pixel electrode of different colours along the direction of row and column,
Wherein, described pixel electrode is formed by reflective conductive layer.
25. flat-panel monitor as claimed in claim 24, wherein, described pixel electrode is arranged by " △ " shape.
26. flat-panel monitor as claimed in claim 24, wherein, described flat-panel monitor is an organic light emitting display.
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Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1594347B1 (en) * 2003-02-13 2010-12-08 FUJIFILM Corporation Display apparatus and manufacturing method thereof
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
CA2472671A1 (en) 2004-06-29 2005-12-29 Ignis Innovation Inc. Voltage-programming scheme for current-driven amoled displays
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US20140111567A1 (en) 2005-04-12 2014-04-24 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
JP5128287B2 (en) 2004-12-15 2013-01-23 イグニス・イノベイション・インコーポレーテッド Method and system for performing real-time calibration for display arrays
US8599191B2 (en) 2011-05-20 2013-12-03 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
KR100700648B1 (en) * 2005-01-31 2007-03-27 삼성에스디아이 주식회사 Top-emitting Organic Electroluminescent Display Device
CA2496642A1 (en) 2005-02-10 2006-08-10 Ignis Innovation Inc. Fast settling time driving method for organic light-emitting diode (oled) displays based on current programming
KR101170798B1 (en) * 2005-06-01 2012-08-02 삼성전자주식회사 Volumetric 3D display system using multi-layer organic light emitting device
US7852298B2 (en) 2005-06-08 2010-12-14 Ignis Innovation Inc. Method and system for driving a light emitting device display
CA2518276A1 (en) 2005-09-13 2007-03-13 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
KR100721949B1 (en) * 2005-09-16 2007-05-25 삼성에스디아이 주식회사 Organic Electroluminescent Display Device
JP2007293329A (en) * 2006-03-31 2007-11-08 Canon Inc Display device
US8026669B2 (en) * 2006-03-31 2011-09-27 Canon Kabushiki Kaisha Display device
WO2007118332A1 (en) 2006-04-19 2007-10-25 Ignis Innovation Inc. Stable driving scheme for active matrix displays
KR100784553B1 (en) * 2006-06-16 2007-12-11 엘지전자 주식회사 Light emitting device and method for manufacturing the same
KR20080000294A (en) * 2006-06-27 2008-01-02 엘지.필립스 엘시디 주식회사 Amoled and driving method thereof
CA2556961A1 (en) 2006-08-15 2008-02-15 Ignis Innovation Inc. Oled compensation technique based on oled capacitance
JP5185598B2 (en) * 2007-11-06 2013-04-17 株式会社ジャパンディスプレイイースト Organic EL display device and manufacturing method thereof
JP4702395B2 (en) * 2008-05-20 2011-06-15 ソニー株式会社 Display device and electronic device
TWI390314B (en) * 2008-12-11 2013-03-21 Au Optronics Corp Pixel array and driving method thereof
CA2669367A1 (en) 2009-06-16 2010-12-16 Ignis Innovation Inc Compensation technique for color shift in displays
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
CA2688870A1 (en) 2009-11-30 2011-05-30 Ignis Innovation Inc. Methode and techniques for improving display uniformity
US10319307B2 (en) 2009-06-16 2019-06-11 Ignis Innovation Inc. Display system with compensation techniques and/or shared level resources
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US10996258B2 (en) 2009-11-30 2021-05-04 Ignis Innovation Inc. Defect detection and correction of pixel circuits for AMOLED displays
US8803417B2 (en) 2009-12-01 2014-08-12 Ignis Innovation Inc. High resolution pixel architecture
CA2686174A1 (en) * 2009-12-01 2011-06-01 Ignis Innovation Inc High reslution pixel architecture
CA2687631A1 (en) 2009-12-06 2011-06-06 Ignis Innovation Inc Low power driving scheme for display applications
US20140313111A1 (en) 2010-02-04 2014-10-23 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
CA2692097A1 (en) 2010-02-04 2011-08-04 Ignis Innovation Inc. Extracting correlation curves for light emitting device
US10163401B2 (en) 2010-02-04 2018-12-25 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10176736B2 (en) 2010-02-04 2019-01-08 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US10089921B2 (en) 2010-02-04 2018-10-02 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
KR101097337B1 (en) * 2010-03-05 2011-12-21 삼성모바일디스플레이주식회사 Organic light emitting display device
CA2696778A1 (en) 2010-03-17 2011-09-17 Ignis Innovation Inc. Lifetime, uniformity, parameter extraction methods
KR101064430B1 (en) * 2010-04-13 2011-09-14 삼성모바일디스플레이주식회사 Organic light emitting display device
KR101142752B1 (en) * 2010-04-13 2012-05-03 삼성모바일디스플레이주식회사 Flat Panel Display Device
US8907991B2 (en) 2010-12-02 2014-12-09 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
CN106910464B (en) 2011-05-27 2020-04-24 伊格尼斯创新公司 System for compensating pixels in a display array and pixel circuit for driving light emitting devices
KR101805753B1 (en) 2011-06-13 2017-12-08 삼성디스플레이 주식회사 Organic light emitting display apparatus
JP6099336B2 (en) * 2011-09-14 2017-03-22 株式会社半導体エネルギー研究所 Light emitting device
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
US8937632B2 (en) 2012-02-03 2015-01-20 Ignis Innovation Inc. Driving system for active-matrix displays
US9190456B2 (en) 2012-04-25 2015-11-17 Ignis Innovation Inc. High resolution display panel with emissive organic layers emitting light of different colors
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
WO2014108879A1 (en) 2013-01-14 2014-07-17 Ignis Innovation Inc. Driving scheme for emissive displays providing compensation for driving transistor variations
US9830857B2 (en) 2013-01-14 2017-11-28 Ignis Innovation Inc. Cleaning common unwanted signals from pixel measurements in emissive displays
CN103077683B (en) * 2013-02-01 2016-08-03 四川虹视显示技术有限公司 The drive circuit of a kind of AMOLED panel and corresponding driving method
EP3043338A1 (en) 2013-03-14 2016-07-13 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for amoled displays
WO2014174427A1 (en) 2013-04-22 2014-10-30 Ignis Innovation Inc. Inspection system for oled display panels
KR102060013B1 (en) * 2013-04-24 2019-12-30 삼성디스플레이 주식회사 Organic light emitting diode display
KR102097023B1 (en) * 2013-06-17 2020-04-06 삼성디스플레이 주식회사 Display device and method for manufacturing display device
DE112014003719T5 (en) 2013-08-12 2016-05-19 Ignis Innovation Inc. compensation accuracy
US9741282B2 (en) 2013-12-06 2017-08-22 Ignis Innovation Inc. OLED display system and method
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
DE102015206281A1 (en) 2014-04-08 2015-10-08 Ignis Innovation Inc. Display system with shared level resources for portable devices
CN104155789B (en) * 2014-08-05 2017-02-15 上海中航光电子有限公司 Pixel structure and pixel compensation method thereof
KR102182828B1 (en) * 2014-08-14 2020-11-26 엘지디스플레이 주식회사 Organic light emitting display panel
CA2879462A1 (en) 2015-01-23 2016-07-23 Ignis Innovation Inc. Compensation for color variation in emissive devices
US10008609B2 (en) * 2015-03-17 2018-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, or display device including the same
CA2889870A1 (en) 2015-05-04 2016-11-04 Ignis Innovation Inc. Optical feedback system
CA2892714A1 (en) 2015-05-27 2016-11-27 Ignis Innovation Inc Memory bandwidth reduction in compensation system
CA2900170A1 (en) 2015-08-07 2017-02-07 Gholamreza Chaji Calibration of pixel based on improved reference values
KR102471113B1 (en) * 2015-11-18 2022-11-28 삼성디스플레이 주식회사 Display apparatus
US10224386B2 (en) * 2016-09-23 2019-03-05 Apple Inc. Display with power supply mesh
KR20180075773A (en) * 2016-12-26 2018-07-05 삼성디스플레이 주식회사 Display device
CN106653817B (en) * 2017-01-19 2019-07-02 深圳市华星光电技术有限公司 Transparent OLED display panel
JP6771401B2 (en) * 2017-02-09 2020-10-21 株式会社Ｊｏｌｅｄ Active matrix display device
CN112133709B (en) * 2017-02-15 2023-05-19 朱夏青 Display device
CN110767106B (en) * 2018-09-30 2020-09-08 云谷（固安）科技有限公司 Display panel, display screen and display terminal
US11088229B1 (en) * 2020-01-17 2021-08-10 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Pixel driving circuit and manufacturing method thereof
CN117158129A (en) * 2022-03-29 2023-12-01 京东方科技集团股份有限公司 Display substrate and display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1006588A2 (en) * 1998-12-01 2000-06-07 Sanyo Electric Co., Ltd. Color electroluminescence display device
CN1376014A (en) * 2000-11-22 2002-10-23 索尼株式会社 Active array type display apparatus
US20040164668A1 (en) * 2003-02-20 2004-08-26 Hiroshi Kanno Color light emitting display device
WO2004075245A2 (en) * 2003-02-24 2004-09-02 Ignis Innovation Inc. A pixel having an organic light emitting diode and method of fabricating the pixel

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218626A (en) 1984-04-13 1985-11-01 Sharp Corp Color llquid crystal display device
US6366017B1 (en) * 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
JP3710969B2 (en) 1999-09-30 2005-10-26 三洋電機株式会社 Electroluminescence display device
WO2002009478A1 (en) * 2000-07-24 2002-01-31 Tdk Corporation Luminescent device
JP2003255858A (en) 2002-02-28 2003-09-10 Sanyo Electric Co Ltd Display device
JP3742357B2 (en) * 2002-03-27 2006-02-01 ローム株式会社 Organic EL drive circuit and organic EL display device using the same
JP2005100724A (en) * 2003-09-24 2005-04-14 Sanyo Electric Co Ltd Top emission type organic el display device
JP3921480B2 (en) * 2004-10-22 2007-05-30 シャープ株式会社 Display element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1006588A2 (en) * 1998-12-01 2000-06-07 Sanyo Electric Co., Ltd. Color electroluminescence display device
CN1376014A (en) * 2000-11-22 2002-10-23 索尼株式会社 Active array type display apparatus
US20040164668A1 (en) * 2003-02-20 2004-08-26 Hiroshi Kanno Color light emitting display device
WO2004075245A2 (en) * 2003-02-24 2004-09-02 Ignis Innovation Inc. A pixel having an organic light emitting diode and method of fabricating the pixel

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CN1773591A (en) 2006-05-17
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