CN100406612C - Sputtering apparatus and method of forming film - Google Patents

Sputtering apparatus and method of forming film Download PDF

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Publication number
CN100406612C
CN100406612C CNB2004100697178A CN200410069717A CN100406612C CN 100406612 C CN100406612 C CN 100406612C CN B2004100697178 A CNB2004100697178 A CN B2004100697178A CN 200410069717 A CN200410069717 A CN 200410069717A CN 100406612 C CN100406612 C CN 100406612C
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film
substrate
thickness
revision board
vacuum vessel
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CN1670238A (en
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宋亦周
樱井武
千叶幸喜
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Shincron Co Ltd
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Shincron Co Ltd
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Abstract

This invention provides a sputtering system for easily forming a thin film having a desired film thickness distribution. A film thickness correction plate 35 and a shielding plate 36 are installed between targets 29a and 29b and a substrate S. A region (60) facing a substrate holder 13 different from the region between the targets 29a and 29b and the substrate holder 13 is provided with a plasma generating means 80 for generating a plasma. The film thickness correction plate 35 comprises a first correction plate 35a and a second correction plate 35b constituted of a plurality of small correction pieces 35a<SB>1</SB>, 35b<SB>1</SB>, etc., installed continuously in a direction along a revolution axis Z of the substrate. The small correction pieces (35a<SB>1</SB>, 35b<SB>1</SB>, etc.,) are installed apart intervals in a direction along the projection locus when the locus of the revolving substrate S is projected to the targets 29a and 29b. Correction plate driving means (71a, 71b, etc.,) for driving the small correction pieces (35a<SB>1</SB>, 35b<SB>1</SB>, etc.,) along the projection locus are provided.

Description

Sputter equipment and film forming method
Technical field
The present invention relates to be used to make optical thin film, perhaps be used for making the sputter equipment and the film forming method of the film of optical device, photoelectronics equipment, semiconductor devices etc., particularly relate to the sputter equipment and the film forming method of the thickness that can regulate formed film.
Background technology
All the time, when on substrate, forming film, the technology that revision board is set between the generation source of raw material and substrate for the film of the film of adjusting formation distributes is known by people already, and (for example patent documentation 1: the spy opens 2002-285330 communique (the 2nd, 4-5 page or leaf, Fig. 1-4).
Figure 12, Figure 13 are the explanatory views of the prior art of explanation patent documentation 1 description.Shown in Figure 12 (a), in the prior art, between as the target 310 in the generation source of the formation element of film and film forming substrate 330, be provided with thickness revision board 320.Like this, when the substrate 330 that will have the rotation symmetric shape with the rotation axes of symmetry is the center rotation, on substrate 330, form film.Thickness revision board 320 has the shape shown in Figure 12 (b), (c).Figure 12 (c) is the figure that the part of Figure 12 (b) is amplified.Shown in Figure 12 (b), (c), thickness revision board 320 has a plurality of small shield component 322 of a plurality of drive units 321 and drive unit 321 drivings.Thickness revision board 320 is provided with peristome 323.
Figure 13 is the explanatory view of the state that is activated of expression shield component 322.In the prior art patent documentation 1, drive unit 321 drives small shield component 322, makes the alteration of form of thickness revision board 320, adjusts film thickness distribution whereby.For example, move to the B position shown in the dotted line from the A position shown in the solid line of Figure 13, make 320 distortion of thickness revision board, and then adjust film thickness distribution by driving shield component 322.So, when needing to change the shape of thickness revision board, needn't make other new thickness revision boards, need not spended time, can freely change the shape of thickness revision board.
But, as can be seen from Figure 13, in the described prior art, the shield component 322 of A position is driven into the B position, change the shape of thickness revision board 320, then the driving direction of the travel direction of substrate 330 and shield component 322 is inconsistent.Promptly from target 310 when substrate 330 directions are observed, though substrate 330 the rotation (shown in the arrow イ of Figure 13), the thickness revision board is done translational motion (shown in the arrow of Figure 13).Therefore, when driving shield component 322, with respect to the rotation of substrate 330, produced the slit in the hidden position of the atom that arrives to disperseing from target, institute is so that the optimized operation of the shape of thickness revision board 320 becomes difficult at every turn.Be shield component 322 when the A position, disperse and the atom that arrives is interdicted in the distance of the r1～r2 of the rotation center of substrate 330, and shield component 322 is when the B position, disperse and the atom that arrives is interdicted in the distance of the r1～r3 of substrate 330.Like this, because the driving of shield component 322, the position of the atom crested of dispersing is unfixed with respect to the rotation of substrate 330, and at this moment the problem of Cun Zaiing is the shape optimizing that is difficult to make thickness revision board 320.
Summary of the invention
In view of the above problems, the purpose of this invention is to provide sputter equipment and the film forming method that to adjust film thickness distribution simplely.
The technical scheme 1 described sputter equipment that solves described problem is a film forming sputter equipment on the substrate that revolves round the sun in the inside of described vacuum vessel by the tabular target that is installed in vacuum vessel inside is carried out sputter, it is characterized by, it is furnished with substrate fixture and thickness revision board, and is furnished with the revision board drive unit; The described substrate of described substrate fixture clamping makes described substrate revolution, described thickness revision board is arranged between described target and the described substrate, relative with described target, be used for the thickness of the film that forms is revised, described thickness revision board is made of the 1st revision board and the 2nd revision board, described the 1st revision board and described the 2nd revision board are made of a plurality of correction small pieces that are provided with in succession along described substrate hollow shaft direction respectively, with certain spacing distance setting, a plurality of correction small pieces that constitute a plurality of correction small pieces of described the 1st revision board and constitute described the 2nd revision board are driven by the revision board drive unit along described projected footprint direction the correction small pieces that constitute the correction small pieces of described the 1st revision board and constitute the 2nd revision board along the projected footprint of the projection of revolution track on described target of described substrate.
By such formation, even when during sputter, wanting to change the distribution of sputtering material, needn't make vacuum vessel return to the operation that atmospheric pressure state is changed the thickness revision board, only need to drive the shape that the correction small pieces can change the thickness revision board with the revision board drive unit.Therefore, in the shape that changes the thickness revision board, can keep the vacuum state in the vacuum vessel, and can keep the ambient stable in the vacuum vessel.Particularly can drive correction small pieces that constitute the 1st revision board and the correction small pieces that constitute the 2nd revision board, so can change the shape of thickness revision board in conjunction with the projected footprint of substrate revolution along the projected footprint direction of the projection of track on target of substrate revolution.Therefore, make the adjustment film thickness distribution become easy.
The technical scheme 2 described sputter equipments that solve described problem are film forming sputter equipments on the substrate that revolves round the sun in the inside of described vacuum vessel by the tabular target that is installed in vacuum vessel inside is carried out sputter, it is characterized by, the plasma producing apparatus that it is furnished with substrate fixture, thickness revision board and produces plasma body, and be furnished with the revision board drive unit; The described substrate of described substrate fixture clamping makes described substrate revolution, described thickness revision board is arranged between described target and the described substrate, relative with described target, be used for the thickness of the film that forms is revised, described thickness revision board is made of the 1st revision board and the 2nd revision board, described the 1st revision board and described the 2nd revision board are made of a plurality of correction small pieces that are provided with continuously along described substrate hollow shaft direction respectively, with certain spacing distance setting, a plurality of correction small pieces that constitute a plurality of correction small pieces of described the 1st revision board and constitute described the 2nd revision board are driven by the revision board drive unit along described projected footprint direction the correction small pieces that constitute the correction small pieces of described the 1st revision board and constitute the 2nd revision board along the projected footprint direction of the projection of track on described target of described substrate revolution; The space of described plasma producing apparatus towards described substrate fixture is set, and this space is different from the space between described substrate fixture and the described target.
By such formation, can have and the identical effect of technical scheme 1 described sputter equipment.And the plasma body that can use the plasma producing apparatus generation is to carrying out plasma treatment by sputtering at the film that forms on the substrate.
In addition, in technical scheme 1 or the technical scheme 2 described devices, be preferably provided with switch door and gas barrier, the film that sputter is carried out in the inside that described switch door is separated described vacuum vessel forms chamber and load lock (load-lock) chamber, described gas barrier makes described film form chamber and the exhaust independently of described load locking room, and described load locking room is used for described substrate is moved into described vacuum vessel inside.
By such formation, under the situation of the shape that does not change the thickness revision board, even when substrate being moved into the inside of vacuum vessel, also can keep film formation chamber to be in vacuum state, can keep film to form the ambient stable of chamber.
The technical scheme 4 described film forming methods that solve described problem are to use following sputter equipment, by the tabular target that is installed in vacuum vessel inside is carried out sputter on described substrate film forming method, described sputter equipment is furnished with a plurality of correction small pieces, and can be separated out film in the inside of described vacuum vessel and form chamber and load locking room, described correction small pieces interdict the atom that part disperses out from described target between described target and described substrate, being characterized as of described film forming method, it comprises following operation: at described load locking room substrate is installed in operation on the substrate fixture; Make described load locking room be in the operation of vacuum state; Described substrate fixture is formed the operation that move the chamber from described load locking room to the described film of vacuum state; In described film formation chamber, make described substrate revolution film forming operation on described substrate simultaneously; Described substrate fixture is sent to the operation of the described load locking room of vacuum state; Keep the vacuum state that described film forms the chamber, make described load locking room return to the operation of atmospheric pressure state and the operation of taking off described substrate from described substrate fixture simultaneously; In described film forming operation, can drive described correction small pieces along the projected footprint direction of the projection of described substrate revolution track on described target.
When utilizing such method to form film, can keep film to form the chamber in the inside of substrate being moved into vacuum vessel simultaneously and be in vacuum state.In addition, even the distribution of sputtering particle changes and essential when changing the position of revising small pieces in film forming operation, also can in the vacuum state in keeping vacuum vessel, directly drive the correction small pieces.So, can under the film forming environment stable status in keeping vacuum vessel, form film.In addition, revise small pieces because can drive, so can adjust the distribution of thickness simplely along the projected footprint direction of substrate revolution.
The technical scheme 5 described film forming methods that solve described problem are to use following sputter equipment, by the tabular target that is installed in vacuum vessel inside is carried out sputter on substrate film forming method, described sputter equipment is furnished with a plurality of correction small pieces, and can be separated out film in the inside of described vacuum vessel and form chamber and load locking room, described correction small pieces interdict the atom that part disperses out from described target between described target and described substrate, being characterized as of described film forming method, it comprises following operation: at described load locking room substrate is installed in operation on the substrate fixture; Make described load locking room be in the operation of vacuum state; Described substrate fixture is formed the operation that move the chamber from described load locking room to the described film of vacuum state; In described film formation chamber, make described substrate revolution film forming operation on described substrate simultaneously; Described substrate fixture is sent to the operation of the described load locking room of vacuum state; Keep the vacuum state that described film forms the chamber, make described load locking room return to the operation of atmospheric pressure state and the operation of taking off described substrate from described substrate fixture simultaneously; Described film forming operation is made of sputtering process and reaction process, described sputtering process forms film by the sputter to described target, described reaction process carries out plasma treatment by the film that described sputtering process is formed increases the thickness of the film of described sputtering process formation, in described film forming operation, can drive described correction small pieces along the projected footprint direction of the projection of track on described target of described substrate revolution.
Utilize such method to form film, can have and the identical effect of described technical scheme 4 described film forming methods.And can increase the thickness of the film of sputtering process formation by plasma treatment, and then can further change the film thickness distribution of the film of sputter formation.
Can adjust film thickness distribution by sputter equipment of the present invention and film forming method simplely.
Description of drawings
Fig. 1 be explanation film forming device of the present invention partial cross section overlook explanatory view.
Fig. 2 is the side-looking explanatory view of the partial cross section of explanation film forming device of the present invention.
Fig. 3 is the cross-sectional illustration figure of explanation substrate configuration.
Fig. 4 is the explanatory view of the configuration status of explanation thickness revision board and masking shield.
Fig. 5 is the explanatory view of the configuration status of explanation thickness revision board and masking shield.
The explanatory view of Fig. 6 relative substrate situation of movement of revision board that to be explanation produce because of the rotation of substrate fixture with masking shield.
Fig. 7 is the general condensed summary figure of explanation plasma generator of the present invention.
Fig. 8 is the general condensed summary figure of explanation plasma generator of the present invention.
The diagram of the relation of Fig. 9 oxygen flow that to be expression import to the film formation process district and silicon incomplete oxidation thing SiOx (x＜2) stoichiometric coefficient x.
The diagram of the relation of the flow of Figure 10 oxygen that to be expression import to the film formation process district and the stoichiometric coefficient x of niobium incomplete oxidation thing NbOx (x＜2.5).
Figure 11 is the diagram of the relation of explanation corrosion scope of target and revision board.
Figure 12 is the explanatory view of explanation prior art.
Figure 13 is the explanatory view of explanation prior art.
Nomenclature
1... sputter equipment; 11... vacuum vessel; 11a... opening; 11b; 11c... door; 11A... formation chamber; 11B... load locking room; 12; 14; 16... dividing plate; 13... substrate fixture; 13a... base plate keeping device; 13b... recess; 15; 15 ' ... vacuum pump; 15a; 15a ' ... pipe arrangement; 17 motors, 20... the 1st film formation process district, 21a; 21b; 41a; 41b... magnetron sputtering electrode; 23; 43 AC power; 24; 44 transformers, 25; 27; 45; 47; 65; 67... flow rate control device, 26; 46 sputter gas steel cylinders; 28; 48; 68... reactant gas steel cylinder; 29a; 29b; 49a; 49b... target, 35; 55... the thickness revision board, 35a... the 1st revision board; 35a1; 35a2; 35a3; 35b1; 35b2; 35b3... revision board; 35b... the 2nd revision board, 36; 56... masking shield, 40... the 2nd film formation process district; 60... reaction process district; 71a; 71b.. the revision board CD-ROM drive motor, 72a; 72b... drive shaft, 73a; 73b; 74a; 74b... conical gear; 75a; 75b... screw rod; 76a; 76b... nut, the 80... plasma producing apparatus, the 80A... antenna is placed the chamber; 81... shell; 81a... communicating pores, 81b... sealing element, 83... insulcrete; 84... fixed frame; 85a; 85b... antenna, 86a; 86b... wire portion, the 87v... match box; 87a; 87b... variable condenser; 88... fixer, 88a; 88b... retaining plate, 88c; 88d... stationary fixture; 89... high frequency electric source; 310... target, 320... thickness revision board, 321... drive unit; 322... shield component; 323... peristome, 330... substrate, 331... drive unit; E... corrode scope; M... reference plane, P... protective layer, S... substrate; V1; V2; V3... valve, the Z... central axis
Concrete form of implementation
Below based on a description of drawings form of implementation of the present invention.In addition, the parts that the following describes, configuration etc. do not constitute limitation of the invention, can carry out various changes in aim scope of the present invention.
Fig. 1 to Fig. 8 is the explanatory view that sputter equipment 1 is described.Fig. 1 be intercepted for the ease of understanding partial cross section sputter equipment 1 overlook explanatory view, Fig. 2 is the side illustration figure along the partial cross section of Fig. 1 center line A-B-C.Fig. 3 is the cross-sectional illustration figure of the configuration of explanation substrate.Fig. 4, Fig. 5 are the explanatory views that is used for illustrating the configuration status of thickness revision board of the present invention and masking shield.Fig. 6 is the rotation of explanation because of substrate fixture, the explanatory view of the relative substrate situation of movement with masking shield of thickness revision board.Fig. 7 is the general condensed summary figure of explanation plasma producing apparatus of the present invention.Fig. 8 is the sectional view of Fig. 7 along D-D.
Present embodiment is carried out the example of the sputter equipment 1 of magnetron sputtering as sputter with use, but is not limited to this, also can use the sputter equipment of other known sputters such as 2 utmost point sputters of non-magnetron discharge.
By the sputter equipment 1 of present embodiment, by sputter make than the purpose thickness thin the film of Duoing, carry out plasma treatment then, by operation so repeatedly, can on substrate, form film with purpose thickness.In the present embodiment, carrying out repeatedly forming average film thickness by sputter and plasma treatment is the operation of the film of 0.01～1.5nm, and finally forming thickness is the films of several nanometers to the purpose thickness of hundreds of nanometers.
The main composition of the sputter equipment 1 of present embodiment will have vacuum vessel 11; Be used for being installed in the substrate fixture 13 of film forming substrate in the vacuum vessel 11; Be used for the motor 17 of rotary plate anchor clamps 13; Dividing plate 12,14,16; Magnetron sputtering electrode 21a, 21b; AC power 23,43; Thickness revision board 35,55; Masking shield 36,56 and plasma producing apparatus 80.
Vacuum vessel 11 is ducted bodies of the nearly rectangular shape of normally used stainless steel in the known sputter equipment.The inside of vacuum vessel 11 can be divided into film by the door 11b as switch door of the present invention and form chamber 11A and load locking room 11B.The top of vacuum vessel 11 connects the door accommodating chamber (not shown) that holds a 11b, by slide switch door 11b between vacuum vessel 11 inside and door accommodating chamber inside.In addition, vacuum vessel 11 is provided with the door 11C that separates load locking room 11B and vacuum vessel outside.Door 11c is by sliding or coming back rotation to carry out switch.The film of vacuum vessel 11 inside forms chamber 11A and connects the pipe arrangement 15a that exhaust is used, and in order to carry out exhaust, this pipe arrangement connects vacuum pump 15.In addition, the load locking room 11B of vacuum vessel 11 inside connects the pipe arrangement 15a ' that exhaust is used, and in order to get rid of the gas in the vacuum vessel 11, this pipe arrangement connects vacuum pump 15 '.Vacuum pump 15, pipe arrangement 15a and vacuum pump 15 ', pipe arrangement 15a ' are equivalent to gas barrier of the present invention.
The formation of substrate fixture 13 will guarantee that it can form between chamber 11A and the load locking room 11B mobile at film.In the present embodiment, be provided with track (not shown) in the bottom surface of vacuum vessel 11, substrate fixture 13 is moved by this track guiding.In the film process, substrate fixture 13 is fixed on the position that film forms chamber 11A, and before the film forming on substrate fixture 13 in the installation base plate S, when perhaps taking off substrate S from substrate fixture 13 after the film forming, substrate fixture 13 is fixed on the position of load locking room 11B.Being shaped as of substrate fixture 13 is cylindric, and its periphery is held a plurality of substrate S (with reference to Fig. 3).In addition, the shape of substrate fixture 13 can not be cylindric, but the polygon column of hollow or coniform.Substrate fixture 13 is insulated because of vacuum vessel 11.Like this, can prevent the paradoxical discharge of substrate.Substrate fixture 13 is configured in the vacuum vessel 11, and the central axis Z (with reference to Fig. 2) of the tube direction of its cylinder is on the above-below direction of vacuum vessel 11.Under the vacuum state in keeping vacuum vessel 11, substrate fixture 13 is arranged on the driving of the motor 17 on vacuum vessel 11 tops, is the center rotation with the central axis.
As shown in Figure 3, at the periphery of substrate fixture 13 a plurality of substrate S are installed, substrate S is (above-below direction of Fig. 3 is the above-below direction (direction of central axis Z) of sputter equipment 1) of installing with the proper alignment ground, interval of regulation along the direction (above-below direction) of the central axis Z of substrate fixture 13.In the present embodiment, substrate S is installed in the periphery of substrate fixture 13 by base plate keeping device 13a, and the formation pellicular front of substrate (hereinafter referred to as " film formation face ") is towards the direction of the central axis Z of vertical substrate anchor clamps 13.Base plate keeping device 13a is the base of the stainless steel of the card division (not shown) of being furnished with the clamping substrate, is fixed on the substrate fixture 13 by anchor clamps etc.Base plate keeping device 13a is provided with the recess 13b that holds substrate S.Recess 13b forms row on above-below direction.In the present embodiment, row are furnished with 6 recess 13b, but according to the size of substrate S or the size of substrate fixture 13 etc., this numerical value can change.Substrate S is installed among the recess 13b of base plate keeping device 13a by card division (not shown) clamping.Use screw or spring piece etc. as the card division.Circumferential direction along the periphery of substrate fixture 13 is provided with a plurality of such base plate keeping device 13a, can described a plurality of substrate S be installed at the periphery of substrate fixture 13 like this, this substrate S installs with the proper alignment ground, interval of regulation along the direction (above-below direction) of the central axis Z of substrate fixture 13.Because of the rotation of substrate fixture 13, each substrate S is the hollow shaft revolution with central axis Z.
Dividing plate 12,14,16 is set, its inner-wall surface from vacuum vessel 11 uprightly is provided with towards substrate fixture 13.Dividing plate the 12, the 16th in the present embodiment, the parts of the stainless steel identical with vacuum vessel 11.Dividing plate 12,14,16 is set, make its from the inner-wall surface of vacuum vessel 11 towards substrate fixture 13, and the four sides fenced up.Like this, fence up, formed the 1st film formation process district 20 that is used for carrying out sputter by the periphery of inner-wall surface, dividing plate 12 and the substrate fixture 13 of vacuum vessel 11.In addition, fence up, formed the 2nd film formation process district 40 that is used for carrying out sputter by the periphery of inner-wall surface, dividing plate 14 and the substrate fixture 13 of vacuum vessel container 11.In addition, fence up, formed and produced plasma body carries out plasma treatment to the film on the substrate S reaction process district 60 by the periphery of inner-wall surface, plasma producing apparatus described later 80, dividing plate 16 and the substrate fixture 13 of vacuum vessel container 11.
At this moment, reaction process district 60 forms in the field that is different from the 1st film formation process district 20 and the 2nd film formation process district 40.In the present embodiment, dividing plate 12,14 is set on vacuum vessel 11, forms the 1st film formation process district 20 and the 2nd film formation process district 40 at the relative position that accompanies substrate fixture 13.Dividing plate 16 is set on vacuum vessel 11 then, is the center at the turning axle with substrate fixture, and the position that rotates about 90 degree from the position that forms the 1st film formation process district 20 forms reaction process district 60.During by motor 17 rotary plate anchor clamps 13, the substrate S that is installed in substrate fixture 13 peripherys produces revolution, and towards the position in the 1st film formation process district 20, towards the position in the 2nd film formation process district 40 with towards moving between the position in reaction process district 60.Like this, because revolution, substrate S moves relative to target 29a, 29b, target 49a, 49b, thickness revision board 35,55, masking shield 36,56.
(the 1st film formation process district 20 and the 2nd film formation process district 40)
The 1st film formation process district 20 is by pipe arrangement quality of connection flow rate control device 25,27.The 2nd film formation process district 40 is by pipe arrangement quality of connection flow rate control device 45,47.Mass flow control appts 25,45 connects the sputter gas steel cylinder 26,46 of storing the rare gas element argon gas.Mass flow control appts 27,47 connects the sputter gas steel cylinder 28,48 of storing reactant gas.Flow by mass flow control appts 25,27,45,47 control rare gas elementes and reactant gas imports film formation process district 20,40 by pipe arrangement with rare gas element or reactant gas.Can consider to use for example oxygen, nitrogen, fluorine gas, ozone gas etc. as reactant gas.
In the 1st film formation process district 20, configuration magnetron sputtering electrode 21a, 21b make its periphery towards substrate fixture 13 on vacuum chamber 11 walls.This magnetron sputtering electrode 21a, 21b are fixed on the vacuum chamber 11 that is in earthing potential by the insulating element that does not have expression among the figure.Magnetron sputtering electrode 21a, 21b connect AC power 23 by transformer 24, and are applied in alternating electric field.On magnetron sputtering electrode 21a, the 21b target 29a, 29b are installed.Target 29a, 29b are shaped as tabular, and the installation of target 29a, 29b makes it face the vertical direction of the face of substrate fixture 13 peripherys towards substrate fixture 13 central axis Z.
In the 2nd film formation process district 40, configuration magnetron sputtering electrode 41a, 41b make its periphery towards substrate fixture 13 on vacuum chamber 11 walls.This magnetron sputtering electrode 41a, 41b are fixed on the vacuum chamber 11 that is in earthing potential by the insulating element that does not have expression among the figure.Magnetron sputtering electrode 41a, 41b can connect AC power 43 by transformer 44, and are applied in alternating electric field.Magnetron sputtering electrode 41a, 41b are equipped with target 49a, 49b.Target 49a, 49b are shaped as tabular, and the installation of target 49a, 49b makes it face the vertical direction of the face of substrate fixture 13 peripherys towards substrate fixture 13 central axis Z.
Fig. 4 and Fig. 5 are the explanatory views of explanation thickness revision board 35 and masking shield 36 configuration statuses.Fig. 4 is near the enlarged view the 1st film formation process district 20 among Fig. 1.Fig. 5 is from the explanatory view of substrate fixture 13 when magnetron sputtering electrode 21a, 21b direction observe.The above-below direction of Fig. 5 is the above-below direction (central axis Z direction) of sputter equipment 1.Fig. 6 be explanation under the rotation of substrate fixture 13 drives, thickness revision board 35 and masking shield 36 relatively substrate S move the explanatory view of situation, are from magnetron sputtering electrode 21a, the 21b figure to the observation of substrate fixture 13 directions.
Thickness revision board 35 and masking shield 36 are arranged between target 29a, 29b and the substrate fixture 13, adjust the amount of the sputtering material of directive substrate fixture 13 directions by interdicting the part sputtering material, described sputtering material is produced by the target 29a, the 29b that are installed on magnetron sputtering electrode 21a, the 21b.In addition, sputtering material is by target 29a, 29b, 49a, 49b are carried out sputter, and by the material that target 29a, 29b, 49a, 49b produce, it is atom or the atomic group that constitutes target 29a, 29b, 49a, 49b.
The effect of thickness revision board 35 is to make substrate S go up the uniform film thickness of the film that forms by sputter, and this thickness revision board 35 is by constituting as the revision board 35a of the 1st revision board with as the revision board 35b of the 2nd revision board.Revision board 35a is by a plurality of rectangle correction small pieces 35a 1, 35a 2, 35a 3... constitute.Revision board 35b is by a plurality of rectangle correction small pieces 35b 1, 35b 2, 35b 3... constitute.Among revision board 35a and the revision board 35b, revise small pieces 35a 1And 35b 1, 35a 2And 35b 2, 35a 3And 35b 3... become a pair of respectively.During configuration, make and revise small pieces 35a 1, 35a 2, 35a 3... or revise small pieces 35b 1, 35b 2, 35b 3... long limit towards the direction (the white hollow direction of arrow of the black arrow of Fig. 4 to Fig. 6 or Fig. 6) of the projected footprint (being designated hereinafter simply as " projected footprint ") during to target 29a, 29b vertical projection along the revolution track of substrate S from central axis Z.
In addition, revise small pieces 35a 1And 35b 1, 35a 2And 35b 2, 35a 3And 35b 3... be provided with at interval along the projected footprint direction.The sputtering material that disperses from target 29a, 29b passes through to revise small pieces 35a 1And 35b 1, 35a 2And 35b 2, 35a 3And 35b 3... between the interval that is provided with arrive substrate S.In the present embodiment, with respect to the reference plane M that stretches to central axis Z from the mid-way of target 29a and target 29b, left-right symmetry configuration modifications plate 35a and revision board 35b, correction small pieces 35a 1And 35b 1, 35a 2And 35b 2, 35a 3And 35b 3... in addition, as shown in Figure 5, revise small pieces 35a 1, 35a 2, 35a 3... the edge is provided with in succession as the direction of the central axis Z of the hollow shaft of substrate S.Revise small pieces 35b 1, 35b 2, 35b 3... also the edge is provided with in succession as the direction of the central axis Z of the hollow shaft of substrate S.
To revise small pieces 35a 1, 35a 2, 35a 3..., revise small pieces 35b 1, 35b 2, 35b 3... being arranged to each correction small pieces can be driven by the revision board drive unit that is installed on the vacuum vessel 11 along the projected footprint direction.Revision board drive unit of the present invention is by revision board CD- ROM drive motor 71a, 71b, drive shaft 72a, 72b, and conical gear 73a, 73b, conical gear 74a, 74b, screw rod 75a, 75b, nut 76a, 76b constitute. Drive shaft 72a, 72b break-through vacuum vessel 11, revision board CD- ROM drive motor 71a, 71b are connected in the outside of vacuum vessel 11 with drive shaft 72a, 72b, drive shaft 72a, 72b rotation when starting revision board CD-ROM drive motor 71a, 71b.The front end of drive shaft 72a, 72b is fixed with conical gear 73a, 73b, conical gear 73a, 73b rotation in the time of drive shaft 72a, 72b rotation. Conical gear 73a, 73b and conical gear 74a, 74b interlock mutually. Conical gear 74a, 74b are fixed on the front end of screw rod 75a, 75b.Screw rod 75a, 75b break-through dividing plate 12,14.Under the drive of conical gear 73a, 73b rotation, conical gear 74a, 74b and screw rod 75a, 75b rotation.Screw rod 75a, 75b and nut 76a, 76b screw togather.Screw rod 75a, 75b rotate then, and nut 76a, 76b produce mobile.
Nut 76a, 76b and revision board 35a, 35b form one, and nut 76a, 76b slide and drive revision board 35a, 35b slip.In the present embodiment, screw rod 75a, 75b break-through dividing plate 12,14, towards above-mentioned along the projected footprint direction.Therefore, because the rotation of screw rod 75a, 75b, nut 76a, 76b and revision board 35a, 35b slide along projected footprint direction (direction shown in the arrow is deceived in adding of Fig. 4 to Fig. 6).In this form of implementation, the outside of vacuum vessel 11 is furnished with the control device (not shown) of CPU, ROM, RAM etc., by this control device, and the driving of control revision board CD- ROM drive motor 71a, 71b, and then the slip of control revision board 35a, 35b.
As shown in Figure 6, when revision board 35a, 35b were configured to see direction to magnetron sputtering electrode 21a, 21b from substrate fixture 13, revision board 35a, 35b can cover part target 29a, 29b.Control the amount of target 29a generation by revision board 35a, 35b are set, and then can make the amount that is deposited in the sputtering material on the substrate S cover whole base plate equably, this is illustrated with Fig. 6 towards the sputtering material of substrate fixture 13 directions.
The above-below direction of Fig. 6 is the above-below direction (direction of central axis Z) of sputter equipment 1.When substrate fixture 13 is the center rotation with the central axis Z of substrate fixture 13, observe from magnetron sputtering electrode 21a, 21b side, neat substrate S move left and right of arranging in succession in the above-below direction configuration of the periphery of substrate fixture 13 promptly moves along described projected footprint direction.Fig. 6 hollow core arrow is represented the travel direction of substrate S.
When above-below direction long target 29a, 29b are carried out sputter, under the situation that does not have thickness revision board 35 and masking shield 36, become many towards near near the amount of the sputtering material of substrate fixture 13 center of substrate fixture 13 above-below directions (following, abbreviate as " center ").So, be installed near the center substrate S and go up and pile up more sputtering material, be installed near the center substrate S go up the film thickness that forms and be installed in above or below substrate S go up between the film thickness that forms and deviation occurs.In addition, even same substrate S goes up the film that forms, also can produce deviation between the thickness of the film of formation near near the thickness of the film that forms the film formation face upper end and the lower end.
Therefore, configuration thickness revision board 35, control by near the amount of the sputtering material the center, makes the amount that is deposited in the sputtering material on the substrate S evenly cover whole of the substrate of each substrate S, thereby eliminates the thickness deviation in the sputtering material of substrate fixture 13.Specifically, cover near the amount that reduces near the sputtering material the center center by the long period, compare relative thinner when making near the thickness the center and thickness revision board 35 not being set.Near the thickness attenuation the center of thickness thickening when revision board 35 being set will thickness revision board 35 not being set so finally can be formed on the film that does not have deviation, uniform film thickness on the substrate above-below direction.
In addition, when carrying out sputter, As time goes on, the part that is distributed in of the sputtering material that disperses sometimes changes.Therefore, the disperse distribution of sputtering material of correspondence, move left and right correction small pieces 35a, 35a 2, 35a 3..., revise small pieces 35b 1, 35b 2, 35b 3... can form the film that the substrate above-below direction does not have deviation, uniform film thickness.
In the sputter equipment of present embodiment, the planar substrates S that is installed on the periphery of substrate fixture 13 is the center revolution with central axis Z, so, if among revision board 35a and the revision board 35b only is set, perhaps revision board 35a of She Zhiing and revision board 35b are not relative datum face M when symmetry, substrate S near and the film that forms during away from the 1st film formation process district 20 on thickness, produce the deviation of left and right directions.Therefore, in the present embodiment, with respect to always symmetrical revision board 35a of reference plane M and revision board 35b, make the part of being covered by configuration (driving), be formed on the uniform film of left and right directions of substrate S with respect to reference plane M left-right symmetry by thickness revision board 35.In the present embodiment, the driving of control device control revision board CD- ROM drive motor 71a, 71b makes a pair of to revision board 35a and revision board 35b, correction small pieces 35a 1And 35b 1, 35a 2And 35b 2, 35a 3And 35b 3... respectively with respect to reference plane M move left and right.
In addition, in the present embodiment, slide and revise small pieces 35a 1, 35a 2, 35a 3..., revise small pieces 35b 1, 35b 2, 35b 3... the time, slide along the projected footprint direction.Therefore, move correction small pieces 35a 1, 35a 2, 35a 3..., revise small pieces 35b 1, 35b 2, 35b 3... when being in the position before moving and when being in position after moving, the influence of substrate S arranged side by side up and down being gone up the film that forms immobilizes.For example to correction small pieces 35a shown in Figure 6 4With correction small pieces 35b 4Explanation.As can be seen from Figure 6, observe to substrate fixture 13 directions, revise small pieces 35a from magnetron sputtering electrode 21a, 21b ( target 29a, 29b) 4With correction small pieces 35b 4Be configured near the position of central authorities of covering first substrate of number S.Promptly revise small pieces 35a 4With correction small pieces 35b 4The sputtering material of first substrate of number S is flown in main influence, thereby the thickness of first substrate of number S is gone up in main influence.
In the present embodiment, substrate S, correction small pieces 35a 1, 35a 2, 35a 3..., revise small pieces 35b 1, 35b 2, 35b 3... all the direction along described projected footprint moves, so even revise small pieces 35a 4With correction small pieces 35b 4Move, no matter revise small pieces 35a 4With correction small pieces 35b 4 Small pieces 35a is still revised in position before moving 4With correction small pieces 35b 4Under any situation of the position after moving, its situation that mainly influences first substrate of number does not change.Therefore, even the above-below direction that is distributed in substrate S of thickness changes, also can easily revise this.That is, revise small pieces 35a by only moving 1, 35a 2, 35a 3..., revise small pieces 35b 1, 35b 2, 35b 3... the revision board of the part that middle corresponding film thickness distribution changes, just can easily adjust the distribution of thickness.
The effect of masking shield 36 is to have required film film thickness distribution by sputter formation on substrate S.Masking shield 36 is tabular bodys, has the shape of the corresponding film film thickness distribution that will make, and is fixed on the dividing plate 12 by anchor clamps.In Fig. 5, example shown in Figure 6, masking shield 36 is the continuous shapes of rhombus above-below direction (substrate fixture 13 central axis Z directions).By masking shield 36 being done the shape that diamondwise links to each other, can make thickness and form the face upper end is linear change to film formation face lower end film from substrate S film.Fig. 6 is illustrated this.
If masking shield 36 is done the shape that diamondwise links to each other, and to position configuration substrate S that should each hypotenuse of rhombohedral, substrate S left and right directions (the blank direction of arrow of Fig. 6) is when relatively moving so, observe the temporal difference that can cause each substrate S upper end side and lower end side to cover from target 29a, 29b side at substrate S crested plate 36.There is more sputtered atom to arrive substrate S on one side of the time weak point that the last crested plate 36 of substrate S covers, therefore formed the film thick than thick film in these positions from target 29a, 29b.
Simultaneously, as mentioned above,, on substrate S, form the film of homogeneous film thickness by the effect of thickness revision board 35.Therefore, be provided with thickness revision board 35, and be provided with the words of masking shield 36, observe from target 29a, 29b, the time that substrate S crested plate 36 covers is to the not influence of deviation of above-below direction thickness, that is, on substrate S, form directly thickness film corresponding to the width of masking shield 36 left and right directions.
In the present embodiment, because masking shield 36 is shaped as the shape that rhombus links to each other, so if, then can make thickness is linear change to lower end side from substrate S upper end side film to each substrate S of position configuration that should the rhombus hypotenuse.In the present embodiment, though can be by the shape of masking shield 36 being done the shape that diamondwise links to each other, and thickness is made the film that is linear change from substrate S upper end side to lower end side, but the shape of this masking shield 36 when not limiting the film of making from substrate S upper end side to the lower end side Thickness Variation.Can use masking shield corresponding to formation film film thickness distribution.For example, can be by the shape of masking shield 36 be done circular continuous shape at above-below direction, and thickness is made the film that is radial variation from the upper end side of substrate S to lower end side.
Sputter equipment 1 by present embodiment, thickness revision board 35 is set, no matter where each substrate S is, can make the uniform film thickness of each substrate S, can also form the film that possesses the required film thickness distribution by the shape of masking shield 36 simultaneously, so can easily change the film thickness distribution of the film of manufacturing by the shape that changes masking shield 36.In addition, the shaped design of masking shield 36 does not need to consider to cause the poor of thickness because of the position of each substrate S is different, can easily be designed to have the shape of the masking shield 36 of the film that required film thickness distributes.
As thickness revision board 35 and masking shield 36 being set, thickness revision board 55 and the masking shield 56 that is equivalent to thickness revision board 35 and masking shield 36 is set also in the 2nd film formation process district 40 in the 1st film formation process district 20.At this moment, it is same shape that the shape that is configured in the masking shield 36 in the 1st film formation process district 20 not necessarily requires with the shape that is configured in the masking shield 56 in the 2nd film formation process district 40, can change according to the material of target 29a, 29b, 49a, 49b and the 1st film formation process district the 20, the 2nd film formation process district 40 filming condition separately etc.
(reaction process district 60)
On the wall of the vacuum vessel 11 in corresponding reaction process district 60, form the opening 11a that plasma producing apparatus 80 is set.In addition, reaction process district 60 connects pipe arrangement that passes through the rare gas element in the mass flow control appts 65 importing rare gas element steel cylinders 66 and the pipe arrangement that imports the reactant gas in the reactant gas steel cylinders 68 by mass flow control appts 67.
The wall in dividing plate 16 orientating reaction operation districts 60 covers the protective membrane P that is made of the pyrolysated boron nitride.And the part in the inner-wall surface orientating reaction operation district 60 of vacuum vessel 11 also covers the protective membrane P that is made of the pyrolysated boron nitride.The pyrolysated boron nitride is the inner-wall surface that covers dividing plate 16 and vacuum vessel 11 by the thermal decomposition method of utilizing the chemical vapor deposition method.
The plasma producing apparatus 80 of present embodiment is described with Fig. 1, Fig. 2, Fig. 7, Fig. 8.
Plasma producing apparatus 80 is 60 settings towards the reaction process district.The plasma producing apparatus 80 of present embodiment has following part, i.e. shell 81, insulcrete 83, fixed frame 84, antenna 85a, 85b, fixer 88, pipe arrangement 15a, vacuum pump 15.
Shell 81 has the shape of the opening 11a that forms on the wall that clogs vacuum vessel 11, by anchor clamps (not shown) fixed housing 81, makes it clog the opening 11a of vacuum vessel 11.By shell 81 being fixed on the wall of vacuum vessel 11, plasma producing apparatus 80 is connected with vacuum vessel 11.In the present embodiment, shell 81 is formed by stainless steel.Insulcrete 83 is formed by slab insulant.In the present embodiment, insulcrete 83 is formed by quartz.In addition, insulcrete 83 be can't help quartzy formation, can be by Al 2O 3Deng stupalith form.Fixed frame 84 is mouthful frameworks of word shape, is used for insulcrete 83 is fixed on the shell 81.Fixed frame 84 is connected by anchor clamps (not shown) with shell 81, and clamping insulcrete 83 between fixed frame 84 and the shell 81 is fixed on insulcrete 83 on the shell 81 whereby.By insulcrete 83 is fixed on the shell 81, forms antenna by shell 81 and insulcrete 83 and place chamber 80A.Be in the present embodiment, form antenna by impaling of shell 81 and insulcrete 83 and place chamber 80A.
Setting is fixed on the insulcrete 83 on the shell 81, makes it pass through the inside (reaction process district 60) of opening 11a facing to vacuum vessel 11.At this moment, antenna placement chamber 80A separates with the inside of vacuum vessel 11.The inside that is antenna placement chamber 80A and vacuum vessel 11 is separated by insulcrete 83, forms independently space.In addition, the outside of antenna placement chamber 80A and vacuum vessel 11 is separated by shell 81, forms independently space.In the present embodiment, in the antenna placement chamber 80A that forms as separate space like this, antenna 85a, 85b are set.In addition, the reaction process district 60 of antenna placement chamber 80A and vacuum vessel 11 inside, antenna are placed between chamber 80A and vacuum vessel 11 outsides and are kept resistance to air loss with ring.
For with the gas emptying, make antenna place the inside formation vacuum state of chamber 80A, in the present embodiment, place chamber 80A at antenna and connect exhaust pipe arrangement 15a.Pipe arrangement 15a connects vacuum pump 15.In the present embodiment, pipe arrangement 15a also is communicated with the inside of vacuum vessel 11.Be communicated with vacuum pump 15 at pipe arrangement 15a and valve V1, V2 be set to the position of vacuum vessel 11 inside.In addition, be communicated with vacuum pump 15 at pipe arrangement 15a and valve V1, V3 be set to the position that antenna is placed 80A inside, chamber.The gas that among valve-off V2, the V3 any one can stop antenna to be placed between 80A inside, chamber and vacuum vessel 11 inside moves.The internal pressure of vacuum vessel 11 or antenna are placed the internal pressure of chamber 80A and are measured by vacuumometer (not shown).
In the present embodiment, sputter equipment 1 is furnished with control device (not shown).Record the output data of vacuumometer in this control device.Control device is controlled the exhaust of vacuum pump 15 based on the measured value of the vacuumometer of output, has the function of the vacuum tightness of the inside of adjusting vacuum vessel 11 or the inside that antenna is placed chamber 80A.In the present embodiment, control device is by the switch of by-pass valve control V1, V2, V3, and the inside that can place chamber 80A to the inside and the antenna of vacuum vessel 11 simultaneously or carry out exhaust individually.
Antenna 85a and antenna 85b accept the electric power from high frequency electric source 89, produce in vacuum vessel 11 inside (reaction process district 60) and induce electric field, and then produce plasma body.Antenna 85a, the 85b of present embodiment has cylindrical body portion that is formed by copper and the coating that is formed by the silver that covers the main part surface.In order to reduce the resistance of antenna 85a, preferably use the low material of resistivity to form antenna 85a, 85b.Among the present invention, utilize high-frequency current to concentrate on the characteristic of antenna surface, low with price, processing and the low copper of resistivity form the main part of cylindric antenna 85a, 85b easily, cover the surface of antenna 85a, 85b then with the resistivity silver lower than copper.By such formation, reduce antenna 85a, 85b resistance to high frequency, make electric current efficiently pass through antenna 85a, improve the efficient that produces plasma body.
Antenna 85a and antenna 85b have the snail shape.The antenna that forms between shell 81 and insulcrete 83 is placed among the 80A of chamber antenna 85a and antenna 85b is set, and makes it in abutting connection with insulcrete 83, and the face that becomes spiral is towards reaction process district 60.In other words, at the neighbouring antenna 85a and the antenna 85b of being provided with accordingly of vertical direction (parallel direction of central shaft Z) of the spiral central axis of antenna 85a and antenna 85b, make antenna 85a and antenna 85b the formation spiral in the face of wall to tabular insulcrete.Therefore, hotwire 17, make substrate fixture 13 around central axis Z rotation, at this moment, the substrate that is installed in the periphery of substrate fixture is transported to laterally (with the track of substrate revolution from vertically insulated plate 83 projections of central axis Z time projected footprint direction) of antenna 85a, 85b arranged side by side up and down, and the film of substrate is formed in the face of the face to the formation spiral of antenna 85a, 85b.
Antenna 85a and 89 parallel connections of antenna 85b relative high frequency power supply.Antenna 85a, 85b connect high frequency electric source 89 by the match box 87 of placing matching circuit.As shown in Figure 8, in the match box 87 variable condenser 87a, 87b are set.
Helical antenna 85a, 85b connect match box 87 by wire portion 86a, 86b.Wire portion 86a, 86b are by forming with the same material of antenna 85a, 85b.On shell 81, form the communicating pores 81a that penetrates wire portion 86a, 86b.Antenna 85a, 85b that antenna is placed 80A inboard, chamber are connected by the wire portion 86a that passes communicating pores 81a with match box 87, the high frequency electric source 89 that antenna is placed the chamber 80A outside.Be provided with sealing element 81b between wire portion 86a, 86b and the communicating pores 81a, so that keep antenna to place the inside and outside resistance to air loss of chamber 80A.
In the present embodiment, the length of wire portion 86a, 86b has more than needed, can adjust the interval D of antenna 85a and antenna 85b.In the sputter equipment 1 of present embodiment, during by fixer 88 non-scanning antenna 85a, 85b, can adjust the interval D of antenna 85a and antenna 85b above-below direction.
Fixer 88 is used for that antenna 85a, 85b are arranged on antenna and places chamber 80A.The fixer 88 of present embodiment is made of retaining plate 88a, 88b, stationary fixture 88c, 88d.The last chimeric antenna 85a of retaining plate 88a, 88b, 85b.By stationary fixture 88c, 88d retaining plate 88a, the 88b of chimeric antenna 85a, 85b are installed on the shell 81.Above-below direction at shell 81 is formed with a plurality of anchor clamps cave, uses anchor clamps cave arbitrarily, and retaining plate 88a, 88b are installed on the shell 81.Promptly adjust the interval D of antenna 85a and antenna 85b above-below direction by used anchor clamps cave.In addition, be insulating in order to make between antenna 85a, 85b and retaining plate 88a, the 88b, the contact surface of antenna 85a, 85b and retaining plate 88a, 88b is formed by insulating material at least.
The following describes the plasma producing apparatus 80 that will have above-mentioned formation and be assembled into order on the vacuum vessel 11.
At first, with fixer 88 antenna 85a, 85b are fixed on the shell 81.At this moment, use the fixer 88 of footpath Rb of footpath Ra, antenna 85b of interval D, the antenna 85a of the above-below direction meet antenna 85a and antenna 85b.Then, use fixed frame 84 that insulcrete 83 is fixed on the shell 81.Antenna 85a, 85b are in be clamped in the state between insulcrete 83 and retaining plate 88a, the 88b.In addition, make shell 81, insulcrete 83, antenna 85a, 85b, 88 one-tenth of fixers as a whole.Then, shell 81 is fixed on the vacuum vessel 11, makes it clog the opening 11a of vacuum vessel 11 with anchor clamps (not shown).Above-mentioned plasma producing apparatus 80 is assembled on the vacuum vessel 11, and antenna is placed the outside of chamber 80A, reaction process district 60 (inside of vacuum vessel 11) and vacuum vessel 11, form independently space respectively, antenna 85a, 85b are arranged on antenna and place among the 80A of chamber.
In the present embodiment, shell 81, insulcrete 83, antenna 85a, 85b, fixer 88 form one, by using anchor clamps fixed housing 81 and vacuum vessel 11, plasma producing apparatus 80 can be connected with vacuum vessel 11, so, can easily on vacuum vessel 11, load and unload plasma producing apparatus 80.
Below, the sputter equipment 1 that uses present embodiment is described, the order of 60 generation plasma bodys in the reaction process district.
At first, start vacuum pump 15, the inside of vacuum vessel 11 and antenna are placed chamber 80A reduce pressure.At this moment, valve V1, V2, V3 that control device will be arranged on pipe arrangement 15a all open, and simultaneously exhaust are carried out in the inside of vacuum vessel 11, the inside that antenna is placed chamber 80A, make the inside of vacuum vessel 11 and the inside of antenna placement chamber 80A be in vacuum state.Control device monitors the measured value of vacuumometer, suitable by-pass valve control V1, V2, V3 switch, and the pressure inside difference of the inside of control vacuum vessel 11 and antenna placement chamber 80A is not excessive (for example, to make the internal pressure difference less than 10 4Pa).Then, the internal pressure at vacuum vessel 11 reaches 10 -2During Pa～10Pa, control device is valve-off V2 at once.Antenna is placed chamber 80A and further is depressurized to 10 -3Below the Pa.Place chamber 80A internal pressure at antenna then and reach 10 -3During Pa, valve-off V3.Then, be 10 in the internal pressure that keeps vacuum vessel 11 -2Under the state of Pa～10Pa, the reactant gas in the reactant gas steel cylinder 68 is imported reaction process district 60 by mass flow control appts 67.
The inside of placing chamber 80A at the inside that keeps vacuum vessel 11 and antenna is under the described specific pressure status, applies the voltage of 13.65MHz, the plasma body of generation reactant gas reaction process district 60 in from high frequency electric source 89 to antenna 85a, 85b.At this moment, the plasma body of the distribution of the interval D of the above-below direction of generation respective antenna 85a and antenna 85b, the footpath Ra of antenna 85a, the footpath Rb of antenna 85b etc.Plasma body by 60 reactant gases that produce in the reaction process district carries out plasma treatment to the substrate that is configured on the substrate fixture 13.
As mentioned above, in the present embodiment, the pressure that keeps producing plasma body in the inside that is formed with the spatial vacuum vessel 11 that forms and handle film, the pressure that the inside that the antenna that is independent of vacuum vessel 11 volume inside in formation is placed chamber 80A keeps 11 inner lower than vacuum vessel, is difficult to form plasma body, and vacuum vessel 11 in the generation plasma body.Therefore, can be suppressed among the antenna placement chamber 80A and produce plasma body, effectively at the vacuum vessel 11 inner plasma bodys that produce.
And in the present embodiment, antenna is placed the inside of chamber 80A and vacuum vessel 11 and is separated by insulcrete 83, form independently space, the inside of placing chamber 80A at antenna is provided with 85a, 85b, and antenna is being placed the state of chamber 80A decompression, produces plasma body in the inside of vacuum vessel 11.Therefore, compare oxidation that like this can suppressing antenna 85a, 85b with the situation that produces plasma body under the state that is arranged at antenna 85a, 85b in the atmosphere.So, can prolong life-span of antenna 85a, 85b.The instabilityization that can suppress in addition, plasma body by the oxidation of suppressing antenna 85a, 85b.
In addition, in the present embodiment, monitor the inside of vacuum vessel 11 and the pressure inside that antenna is placed chamber 80A during decompression, do not produce big pressure difference in the inside that the inside and the antenna of vacuum vessel 11 are placed chamber 80A, keeping the internal pressure of vacuum vessel 11 is 10 -2Pa～10Pa, maintenance antenna are placed the internal pressure of chamber 80A smaller or equal to 10 -3Pa produces plasma body in the inside of vacuum vessel 11.And the inside that antenna is placed chamber 80A and vacuum vessel 11 is insulated plate 83 separations, and antenna is placed the outside of chamber 80A and vacuum vessel 11 and separated by shell 81.Therefore, it is little that present embodiment can keep antenna to place the pressure inside difference of chamber 80A and vacuum vessel 11, thus can be with insulcrete 83 designs thinner, can produce plasma body effectively, simultaneously, can reduce cost by using insulcrete 83 at a low price.
In addition, present embodiment by adjusting the interval D of antenna 85a and antenna 85b above-below direction, can be adjusted the distribution that plasma body is configured in the substrate on the substrate fixture 13 relatively.In addition, because can change the footpath Rb of footpath Ra, antenna 85b of antenna 85a or the thickness of antenna 85a, 85b etc. independently, so the footpath Rb of footpath Ra, antenna 85b that also can be by adjusting antenna 85a or the thickness of antenna 85a, 85b wait the distribution of adjusting plasma body.In addition, in the present embodiment, as shown in Figure 8, antenna 85a and antenna 85b have the global shape that is made of big, little semicircle, but become rectangle by the global shape with antenna 85a or antenna 85b, also can adjust the distribution of plasma body.
Particularly arrange antenna 85a and antenna 85b at the above-below direction that intersects with the carrying direction of the substrate of sideways transfer, can adjust both intervals of antenna 85a, 85b, like this, need when carrying out plasma treatment on a large scale, the carrying direction of substrate crisscross can easily adjust plasma density distribution.For example, use when rotating disc type sputter equipment 1 carries out plasma treatment as the present embodiment, because the configuration of substrate fixture 13 upper substrates, sputtering condition etc., the thickness of substrate fixture top and intermediary film can produce difference sometimes.Even the difference of using in this case, the plasma producing apparatus 80 of present embodiment also to have corresponding thickness can suitably be adjusted the advantage of plasma density.
In addition, in the present embodiment, as mentioned above, dividing plate 16 is covered by the pyrolysated boron nitride towards the part in reaction process district 60 towards wall, vacuum vessel 11 inner-wall surfaces in reaction process district 60, can keep the free radical density height in reaction process district 60 like this, the more freedom base is contacted with film on the substrate, and then improve the efficient of plasma treatment.Promptly by on the inner-wall surface of dividing plate 16 and vacuum vessel 11, covering chemically stable pyrolysated boron nitride, can suppress free radical or excited state free radical that plasma producing apparatus 80 produces and react situation about reducing reaction process district 60 in because of inner-wall surface with dividing plate 16 or vacuum vessel 11.In addition, dividing plate 16 can be controlled the free radical of generation in the reaction process district 60 towards the substrate fixture direction.
(film forming order)
Below, to make lamination silicon-dioxide (SiO 2) and niobium oxides (Nb 2O 5) film be example, the method for using above-mentioned sputter equipment 1 to make film is described.The formation of film is carried out according to following order.The operation of film forming preparatory process, the operation that forms silica membrane, the operation that forms columbium oxide film, taking-up film.
Explanation to the film forming preparatory process.
At first, target 29a, 29b, 49a, 49b are installed on magnetron sputtering electrode 21a, 21b, 41a, the 41b, masking shield 36,56 is installed then.Use the material of silicon (Si) as target 29a, 29b.Use the material of niobium (Nb) as target 49a, 49b.Close a 11b, start vacuum pump 15, carry out exhaust, make film form chamber 11A and be in 10 -2The vacuum state of Pa～10Pa.At this moment, open valve V1, V2, V3, also antenna chamber 80A is carried out exhaust simultaneously.Then, substrate fixture 13 is fixed on the position of load locking room 11B, in this case, substrate S is installed on the substrate fixture 13.Then under the state of closing a 11c, start vacuum pump 15 ', load locking room 11B is carried out exhaust, make it be in 10 -2The vacuum state of Pa～10Pa.Open a 11b then, make substrate fixture 13 form chamber 11A and move to film.Behind substrate fixture 13 immigration films formation chamber 11A, close a 11b once more.
Explanation to the operation that forms silica membrane.
Then, the inside of vacuum chamber 11, antenna are placed the inner pressure relief of chamber 80A to described specified pressure, hotwire 17, rotary plate anchor clamps 13.Then after inside, the antenna of vacuum chamber 11 are placed the internal pressure stabilises of chamber 80A, be adjusted to pressure to 1.0 * 10 in the membrane process district 20 -1～1.3Pa.
Then, adjust sputter rare gas element argon gas and the reactant gas oxygen of carrying from sputter gas steel cylinder 26, reactant gas steel cylinder 28, import the 1st film formation process district 20, adjust the film formation process district 20 that carries out sputter at mass flow control appts 25,27.At this moment, the flow that imports the argon gas in the 1st film formation process district 20 is about 300sccm.The oxygen flow of adjusting importing the 1st film formation process district 20 is to following desirable value.Flux unit is that sccm is illustrated in 0 ℃, and under the 1atm, 1 minute flow is equivalent to cm 3/ minute.
Then apply the voltage of alternating current that frequency is 1～100KHz by transformer 24 to magnetron sputtering electrode 21a, 21b, make target 29a and 29b be in alternating electric field from AC power 23.Like this, at certain time point, target 29a becomes negative electrode (negative pole), and this moment, target 29b must be anode (positive pole).When next time point exchanged the direction variation, target 29b became negative electrode (negative pole), and target 29a becomes anode (positive pole).As mentioned above, a pair of target 29a and 29b become anode and negative electrode alternately, thereby form plasma body, and the target on the anticathode carries out sputter.
Carry out in the sputter procedure, sometimes adhere to silicon oxide (SiOx (x≤2)) non-conductive or that electroconductibility is low on the anode, but when anode changed into negative electrode under action of alternative electric field, by these silicon oxide (SiOx (x≤2)) sputter, the target surface formed original clean conditions.Become anode and negative electrode repeatedly alternately by a pair of target 29a, 29b; obtain stable anode potential state; prevent the plasma potential variation of (equating with anode potential substantially usually), form face at the film of substrate S and stably form silicon or incomplete oxidation silicon (SiOx 1(x 1＜2)).As mentioned above, by carrying out sputter, form the 1st intermediate film that forms by silicon or silicon incomplete oxidation thing as intermediate film at the film formation face of substrate S in the 1st film formation process district 20.Silicon incomplete oxidation thing is to lack silicon-dioxide SiO as the 1st incomplete reaction thing of incomplete reaction thing among the present invention 2The incomplete silicon-dioxide SiOx (x＜2) of formation elemental oxygen.
Carry out the sputter procedure stage, As time goes on, the distribution of the sputtering material that disperses sometimes changes.In this case, in the opportune moment of carrying out sputter procedure, drive and revise small pieces 35a 1, 35a 2, 35a 3... or revise small pieces 35b 1, 35b 2, 35b 3... adjust the distribution of thickness.Drive like this and revise small pieces 35a 1, 35a 2, 35a 3... or revise small pieces 35b 1, 35b 2, 35b 3... opportunity and drive distance and determine by carrying out pilot study etc. in advance.
Fig. 9 represents oxygen flow that imports to the 1st film formation process district 20 and the relation that constitutes silicon incomplete oxidation thing SiOx (x＜2) the stoichiometric coefficient x of the 1st intermediate film.In addition, the relation of oxygen flow that imports to the 1st film formation process district 20 and the silicon incomplete oxidation thing chemistry stoichiometric coefficient x that constitutes the 1st intermediate film is each device institute inherent, so need to realize that carry out pilot study to used device determines as shown in Figure 9 data.Transverse axis is represented the oxygen flow that imports among Fig. 9, the stoichiometric coefficient x of silicon oxide in the composition of the longitudinal axis (number line in left side) expression silicon incomplete oxidation thing SiOx (x＜2).As shown in Figure 9, along with the increase of the oxygen flow that imports, it is big that stoichiometric coefficient x value becomes.
In the present embodiment, according to Fig. 9, the flow of adjusting the oxygen that imports carries out sputter to required value in the 1st film formation process district 20, and the silicon incomplete oxidation thing of silicon or required stoichiometric coefficient x is formed on the film formation face of substrate S.Carry out in the sputter procedure, the speed of rotation rotary plate anchor clamps 13 with required move substrate S, form the 1st intermediate film of silicon or silicon incomplete oxidation thing simultaneously at the film formation face of substrate S.And, between magnetron sputtering electrode 21a, 21b and substrate fixture 13, be provided with thickness revision board 35 and masking shield 36 in the present embodiment, so, as mentioned above, can form the 1st intermediate film corresponding to the film thickness distribution of masking shield 36 shapes.
In addition, present embodiment can also can be adjusted at the composition of the film of the 1st film formation process district 20 formation by the speed of rotation of control basal plate anchor clamps 13 by adjusting the composition that the oxygen flow that imports to the 1st film formation process district 20 is adjusted at the film of the 1st film formation process district 20 formation.
In the 1st film formation process district 20, by on the film formation face of substrate, forming silicon or incomplete oxidation silicon (SiOx 1(x 1＜2) the 1st intermediate film) after the operation of carrying out the 1st intermediate formation film, by making substrate fixture 13 rotations, is transported to substrate S towards the position in reaction process district 60 from the position towards the 1st film formation process district 20.Import oxygen as reactant gas, the argon gas that imports as rare gas element to reaction process district 60 from rare gas element steel cylinder 66 simultaneously from reactant gas steel cylinder 68 to reaction process district 60.Apply the high-frequency voltage of 13.56MHz then on antenna 85a, 85b, by plasma producing apparatus 80,60 produce plasma body in the reaction process district.The pressure in reaction process district 60 keeps 0.7 * 10 -1～1.0pa.In addition, when producing plasma body at least in reaction process district 60, the internal pressure that antenna is placed chamber 80A keeps smaller or equal to 10 -3Pa.
Then, rotary plate anchor clamps 13 will form silicon or incomplete oxidation silicon (SiOx 1(x 1The substrate S of the 1st intermediate film＜2)) is transported to towards the position in reaction process district 60, then in reaction process district 60, by plasma treatment, makes the silicon or the incomplete oxidation silicon (SiOx of the 1st intermediate film 1(x 1＜2)) the operation of oxidation.That is, utilize plasma body, make silicon or incomplete oxidation silicon (SiOx by plasma producing apparatus 80 60 oxygen that produce in the reaction process district 1(x 1＜2)) change into silicon-dioxide (SiO 2).
In the present embodiment, make silicon or the silicon incomplete oxidation thing generation oxidizing reaction that constitutes the 1st intermediate film, make it change into the incomplete oxidation silicon (SiOx of required composition in reaction process district 60 2(x 1＜x 2＜2)) or silicon-dioxide (SiO 2), form the 1st final film like this as final film.By said process, carry out the 1st film and form conversion procedure.The 1st film in this reaction process district 60 is formed in the conversion procedure, and the thickness of Film Thickness Ratio the 1st intermediate film of the 1st final film is thicker.That is, constitute the silicon or the silicon incomplete oxidation thing SiOx of the 1st intermediate film 1(x 1＜2) changing into the incomplete oxidation silicon (SiOx of required composition 2(x 1＜x 2＜2)) or silicon-dioxide (SiO 2) time, the volume of the 1st intermediate film increases, thereby film is thickened, and makes the thickness of Film Thickness Ratio the 1st intermediate film of the 1st final film thicker.
Fig. 9 has provided the relation of the thickness increment rate (=(thickness of the 1st final film)/(thickness of the 1st intermediate film)) of the oxygen flow that imports to the 1st film formation process district 20 in the operation of the 1st intermediate formation film and relative the 1st intermediate film of the 1st final film.Transverse axis is represented the oxygen flow that imports among Fig. 9, the increment rate of the longitudinal axis (number line on right side) expression thickness.
As shown in Figure 9, reduce the oxygen flow that the operation at the 1st intermediate formation film imports to the 1st film formation process district 20, the stoichiometric coefficient x value of silicon incomplete oxidation thing reduces, and simultaneously, the thickness increment rate becomes greatly.That is, the composition of silicon incomplete oxidation thing (value of stoichiometric coefficient x) determines the thickness increment rate of the 1st final film with respect to the 1st intermediate film.In other words, adopt present embodiment, operation at above-mentioned the 1st intermediate formation film, the oxygen flow that adjustment imports to the 1st film formation process district 20, (x is 0 work can to determine to constitute the stoichiometric coefficient x of silicon incomplete oxidation thing of the 1st intermediate film, the 1st intermediate film is made of silicon), thus the thickness increment rate of the 1st final film determined with respect to the 1st intermediate film.
For example, operation at the 1st intermediate formation film, flow velocity with 20sccm imports oxygen to the 1st film formation process district 20, form the 1st intermediate film simultaneously, forming by stoichiometric coefficient x so is the 1st intermediate film that 0.16 silicon incomplete oxidation thing constitutes, the 1st film in reaction process district 60 is formed conversion procedure, and the 1st final film is 1.4 with respect to the thickness increment rate of the 1st intermediate film.
In the present embodiment, operation at the 1st intermediate formation film, the sputter equipment 1 that use is furnished with thickness revision board 35 and masking shield 36 forms the 1st intermediate film on substrate S, so before carrying out the 1st film composition conversion procedure, the film formation face at substrate S has formed the 1st intermediate film that possesses the required film thickness distribution.Carry out the 1st film in this state and form the film thickness distribution that conversion procedure can further change the 1st intermediate film.
For example, the substrate length direction is towards the above-below direction of substrate fixture 13, will be long for the substrate S of 10mm is installed on the substrate fixture 13, the film formation face upper end side thickness that forms substrate S in the operation of the 1st intermediate formation film is 0.3nm, the lower end side thickness is the 1st intermediate film of 0.4nm.At this moment, to form the face upper end side be 0.1nm/10mm to the thickness obliquity of the film of lower end side formation to the film of long substrate S for 10mm.Carry out the relative increment rate of the 1st intermediate film and be 1.4 the 1st film when forming conversion procedure, forming film, to form face upper end side thickness be 0.42nm, and the lower end side thickness is the 1st final film of 0.56nm.That is, the 1st final film upper end side that forms face from film becomes 0.14nm/10mm to the thickness obliquity of lower end side.
Promptly adopt present embodiment, make the 1st intermediate film of only carrying out the sputter generation further obtain the 1st final film with the reactant gas reaction, even the 1st final film is compared with the 1st intermediate film of only carrying out the sputter generation, also can increase the obliquity of its thickness.And present embodiment can be revised small pieces 35a by driving 1, 35a 2, 35a 3... or revise small pieces 35b 1, 35b 2, 35b 3... adjust film thickness distribution.
In the present embodiment, when rotation had the substrate fixture 13 of substrate S, the operation of the 1st intermediate formation film by carrying out above-mentioned explanation repeatedly and the 1st film were formed conversion procedure, made the silicon or the silicon incomplete oxidation thing (SiOx in the 1st film formation process district 20 repeatedly 1(x 1＜2)) on substrate, form and change into the silicon incomplete reaction thing (SiOx in reaction process district 60 2(x 1＜x 2＜2)) or silicon-dioxide (SiO 2), can on substrate S film formation face, form upper end side with required film thickness and become big incomplete oxidation silicon (SiOx to lower end side thickness obliquity 2(x 1＜x 2＜2)) or silicon-dioxide (SiO 2) film.
Form the explanation of the operation of columbium oxide film
The pressure of adjusting in the 2nd film formation process district 40 is 1.0 * 10 -1～1.3Pa.When adjusting flows, will import film formation process districts 40 from sputter gas steel cylinder 46, the oxygen of reactant gas will be imported film formation process districts 40 from reactant gas steel cylinder 48 as the argon gas of rare gas element with mass flow control appts 45,47.The argon flow amount that import film formation process district 20 this moment is approximately 300sccm.Import the oxygen flow in the 2nd film formation process district 40 by following desirable value adjustment.
Then, applying frequency by AC power 43 by transformer 44 on magnetron sputtering electrode 41a, 41b is 1～100KHz voltage of alternating current, produces alternating electric field between target 49a and 49b, carries out sputter.Carry out after the above-mentioned formation silica membrane operation, drive substrate fixture 13 rotations, substrate S is transported to towards the position in the 2nd film formation process district 40 from the position towards reaction process district 60.Carry out sputter in the 2nd film formation process district 40 then, and then on the film formation face of the substrate S that forms the 1st final film lamination form the 2nd intermediate film that forms by niobium or niobium incomplete oxidation thing NbOx (x＜2.5) as intermediate film (below the explanation that forms the columbium oxide film operation in, tediously long for fear of what express, the film formation face that note is made in substrate S forms the 2nd intermediate film).Niobium incomplete oxidation thing NbOx (x＜2.5) is the 2nd an incomplete reaction thing of incomplete reaction thing among the present invention, is at niobium oxides Nb 2O 5The incomplete oxidation niobium NbOx (x＜2.5) of formation elemental oxygen when lacking.
Carry out the sputter procedure stage, As time goes on, the distribution of the sputtering material that disperses sometimes changes.In this case, thickness revision board 35 is same with driving, and in the opportune moment of carrying out sputter procedure, drives thickness revision board 55, and the distribution of thickness is adjusted.Drive the opportunity of thickness revision board 55 like this and drive distance and determine by carrying out pilot study etc. in advance.
Figure 10 represents the relation to the stoichiometric coefficient x of the niobium incomplete oxidation thing NbOx (x＜2.5) of the flow of the oxygen of the 2nd film formation process district 40 importings and formation the 2nd intermediate film.In addition, relation to the 2nd film formation process district 40 oxygen flow that imports and the niobium incomplete oxidation thing chemistry stoichiometric coefficient x that constitutes the 2nd intermediate film is each device institute inherent, determines to resemble data shown in Figure 10 so need realization that used device is carried out pilot study.Transverse axis is represented the flow of the oxygen that imports among Figure 10, the stoichiometric coefficient x of the niobium oxides of the composition of the longitudinal axis (number line in left side) expression niobium incomplete oxidation thing NbOx (x＜2.5).As shown in figure 10, along with the increase of the oxygen flow that imports, the value of stoichiometric coefficient x increases.
In the present embodiment, according to Figure 10, value adjustment imports oxygen flow in accordance with regulations, carries out sputter in the 2nd film formation process district 40, forms the niobium incomplete oxidation thing NbOx (x＜2.5) of niobium or required stoichiometric coefficient x on the film formation face of substrate S.Carry out in the process of sputter, drive substrate fixture 13, substrate S is moved, meanwhile, on the film formation face of substrate S, form the 2nd intermediate film that forms by niobium or niobium incomplete oxidation thing NbOx (x＜2.5) with the fixing speed rotation.And, between magnetron sputtering electrode 41a, 41b and substrate fixture 13, be provided with thickness revision board 55 and masking shield 56 in the present embodiment, so, as mentioned above, can form the 2nd intermediate film corresponding to the film thickness distribution of masking shield 56 shapes.
In addition, present embodiment can also can be adjusted at the composition of the film of the 2nd film formation process district 40 formation by the speed of rotation of control basal plate anchor clamps 13 by adjusting the composition that the oxygen flow that imports to the 2nd film formation process district 40 is adjusted at the film of the 2nd film formation process district 40 formation.
In the 2nd film formation process district 40, form by niobium or niobium incomplete oxidation thing NbOx on the film formation face of substrate S 1(x 1＜2.5) the 2nd intermediate film of Xing Chenging, so after the operation as the 2nd intermediate formation film of the operation of intermediate formation film of the present invention, drive substrate fixture 13 rotations, substrate S is transported to towards the position in reaction process district 60 from the position towards the 2nd film formation process district 40.Same with the formation operation of described silicon oxide film, import oxygen from reactant gas steel cylinder 68 to reaction process district 60 as reactant gas, apply high frequency power on antenna 85a, 85b, by plasma producing apparatus 80,60 produce plasma body in the reaction process district.
The rotary plate anchor clamps 13 then, will form by niobium or niobium incomplete oxidation thing (NbOx 1(x 1＜2.5)) the substrate S of the 2nd intermediate film of Gou Chenging is transported to towards the position in reaction process district 60, makes the niobium or the niobium incomplete oxidation thing (NbOx of the 2nd intermediate film in reaction process district 60 1(x 1＜2.5)) the operation of oxidation.That is, utilize plasma body, make niobium or niobium incomplete oxidation thing NbOx by plasma producing apparatus 80 60 oxygen that produce in the reaction process district 1(x 1＜2.5) oxidizing reaction taking place changes into required incomplete oxidation niobium (NbOx 2(x 1＜x 2＜2.5) or niobium oxides (Nb 2O 5).
In the present embodiment, make formation the 2nd intermediate film niobium or niobium incomplete oxidation thing generation oxidizing reaction in reaction process district 60, and then change into incomplete oxidation niobium (NbOx 2(x 1＜x 2＜2.5)) or niobium oxides (Nb 2O 5), thereby form the 2nd final film of the final film that constitutes by niobium oxides.Carry out forming the 2nd film composition conversion procedure of conversion procedure like this as film of the present invention.Form in the conversion procedure at the 2nd film in this reaction process district 60, form the 2nd final film, make the thickness of Film Thickness Ratio the 2nd intermediate film of the 2nd final film thick.Promptly by making niobium or the niobium incomplete oxidation thing NbOx that constitutes the 2nd intermediate film 1(x 1＜2.5) change into incomplete oxidation niobium (NbOx 2(x 1＜x 2＜2.5)) or niobium oxides (Nb 2O 5), the 2nd intermediate film is increased, thereby make the thickness of Film Thickness Ratio the 2nd intermediate film of the 2nd final film thick.
Figure 10 has provided the relation of the increment rate (=(thickness of the 2nd final film)/(thickness of the 2nd intermediate film)) of the oxygen flow that imports to the 2nd film formation process district 40 in the operation of the 2nd intermediate formation film and the thickness of relative the 2nd intermediate film of the 2nd final film.Transverse axis is represented the oxygen flow that imports among Figure 10, the increment rate of the longitudinal axis (number line on right side) expression thickness.
As shown in figure 10, reduce the oxygen flow that the operation at the 2nd intermediate formation film imports to the 2nd film formation process district 40, then the stoichiometric coefficient x value of niobium incomplete oxidation thing is also along with reducing, and the thickness increment rate becomes greatly.That is, the composition of niobium incomplete oxidation thing (stoichiometric coefficient x value) determines the increment rate of relative the 2nd intermediate film of thickness of the 2nd final film.In other words, adopt present embodiment, operation at above-mentioned the 2nd intermediate formation film, the oxygen flow that adjustment imports to the 2nd film formation process district 40, (x is 0 o'clock can to determine to constitute the stoichiometric coefficient x of niobium incomplete oxidation thing of the 2nd intermediate film, the 2nd intermediate film is made of niobium), and then determine the increment rate of relative the 2nd intermediate film of thickness of the 2nd final film.
For example, operation at the 2nd intermediate formation film, flow velocity with 30sccm imports oxygen to the 2nd film formation process district 40 on one side, form the 2nd intermediate film on one side, formation is the 2nd intermediate film that 0.08 niobium incomplete oxidation thing constitutes by stoichiometric coefficient x, the 2nd film in reaction process district 60 is formed conversion procedure, and the 2nd final film is 1.4 with respect to the thickness increment rate of the 2nd intermediate film.
In the present embodiment, identical with the operation of the 1st intermediate formation film, the operation of the 2nd intermediate formation film uses the sputter equipment 1 of being furnished with thickness revision board 35 and masking shield 36 to form the 2nd intermediate film on substrate S, so before carrying out the 2nd film composition conversion procedure, the film formation face at substrate S has formed the 2nd intermediate film that possesses the required film thickness distribution.
Adopt present embodiment, identical with above-mentioned the 1st film composition conversion procedure, carry out the operation of the 2nd intermediate formation film and carry out the 2nd film composition conversion procedure afterwards, make the 2nd intermediate film of only carrying out the sputter generation further obtain the 2nd final film with the reactant gas reaction, the 2nd final film is compared with the 2nd intermediate film of only carrying out the sputter generation, also can increase its thickness obliquity.And, also can adjust film thickness distribution by driving thickness revision board 55 by the operation of present embodiment at the 2nd intermediate formation film.
In the present embodiment, when rotation has the substrate fixture 13 of substrate S, the operation of the 2nd intermediate formation film by carrying out above-mentioned explanation repeatedly and the 2nd film are formed conversion procedure, the niobium or the niobium incomplete oxidation thing (NbOx (x＜2.5)) in the 2nd film formation process district 40 are formed on substrate, make the niobium in reaction process district 60 or niobium incomplete reaction thing change into niobium oxides (Nb 2O 5), can on the substrate S film formation face that forms required film thickness, form upper end side with required film thickness and become big incomplete oxidation niobium (NbOx to lower end side thickness obliquity 2(x 1＜x 2＜2.5)) or niobium oxides (Nb 2O 5) film.
By the formation silicon oxide film operation and the formation columbium oxide film operation of carrying out above-mentioned explanation, can on substrate S, make lamination silicon-dioxide (SiO 2) and niobium oxides (Nb 2O 5) film.In addition, form the silica membrane operation repeatedly and form the columbium oxide film operation, can increase silicon-dioxide (SiO 2) and niobium oxides (Nb 2O 5) the lamination number.
And in the present embodiment, by the oxygen flow that imports to the 1st film formation process district 20 in the operation adjustment of above-mentioned the 1st intermediate formation film and in the operation adjustment of above-mentioned the 2nd intermediate formation film to the oxygen flow that the 2nd film formation process district 40 imports, can make above-mentioned the 1st film form the thickness increment rate unanimity of relative the 2nd intermediate film of the 2nd final film of the thickness increment rate of relative the 1st intermediate film of the 1st final film of conversion procedure and above-mentioned the 2nd film composition conversion procedure.
That is, suppose the 1st final film with respect to the 1st intermediate film rate of increase and the 2nd final film with respect to the rate of increase of the 2nd intermediate film all as Y.This moment is in the operation of the 1st intermediate formation film, adjust the reactant gas flow and form the 1st incomplete reaction thing, making the 1st incomplete reaction thing of formation have the 1st final film is the composition of Y with respect to the rate of increase of the 1st intermediate film, operation at the 2nd intermediate formation film, also adjust the reactant gas flow and form the 2nd incomplete reaction thing, making the 2nd incomplete reaction thing have the 2nd final film is the composition of Y with respect to the rate of increase of the 2nd intermediate film.
For example, the value of rate of increase is consistent to be 1.4 o'clock, can following adjustment oxygen flow, when forming silica membrane, the oxygen flow of the operation of the 1st intermediate formation film is 20sccm, and when forming columbium oxide film, the oxygen flow of the operation of the 2nd intermediate formation film is 30sccm.Other can be with reference to following example.
The value of rate of increase is consistent to be 1.5 o'clock, can following adjustment oxygen flow, and the oxygen flow of the operation of the 1st intermediate formation film is 17.5sccm, the oxygen flow of the operation of the 2nd intermediate formation film is 22.5sccm.
The value of rate of increase is consistent to be 1.7 o'clock, can following adjustment oxygen flow, and the oxygen flow of the operation of the 1st intermediate formation film is 0sccm, the oxygen flow of the operation of the 2nd intermediate formation film is 15sccm.
In sum, at least one side of the operation of the operation of the 1st intermediate formation film or the 2nd intermediate formation film forms the 1st intermediate film or the 2nd intermediate film while controlling the oxygen that imports, can make the 1st film form the rate of increase basically identical that conversion procedure and the 2nd film are formed conversion procedure, can make the 1st final film that on substrate S, forms and the film thickness distribution (inclined degree) of the 2nd final film like this.
The film thickness distribution of the film of Xing Chenging can pass through to change the shape of masking shield 36 as mentioned above, and can obtain required distribution to the oxygen flow that the film formation process district imports by the operation of adjusting the intermediate formation film.Can certainly be in the operation adjustment of intermediate formation film to the oxygen flow that the film formation process district imports, making the 1st film form conversion procedure and the 2nd film, to form the rate of increase of conversion procedure different, so that the different film of depositional dip degree.
In addition, as present embodiment, increase the thickness of intermediate film by plasma treatment, thereby form final film, the driving that can make thickness revision board 35 (or 55) like this is apart from shortening.
For example, the distribution of the sputtering particle of some positions changes, and causes that the film thickness distribution of the final film of this position changes (as the variation of 0.15nm), consider to drive this moment correction small pieces that should the position (are for example revised small pieces 35a 5, 35b 5).
(do not form the process of intermediate film and increase thickness) when only forming final film, must only can revise the distance driving correction small pieces 35a that film thickness distribution changes the degree of 0.15nm from middle film to final film by sputter 5, 35b 5
Relative therewith, as present embodiment, when forming final film by the thickness that increases intermediate film, even the Thickness Variation of 0.15nm is arranged on the final film, also just produced the variation (is 1.5 to calculate to the thickness rate of increase of final film with intermediate film) of 0.1nm during sputter, so only need to drive and revise small pieces 35a can revising distance that film thickness distribution changes the degree of 0.1nm 5, 35b 5Get final product.
Present embodiment can make the driving of thickness revision board 35 (or 55) apart from shortening like this.
But known, when carrying out so-called magnetron sputtering as present embodiment, the corrosion scope of local sputter appears on the surface of target.Figure 11 is the explanatory view of the relation of explanation corrosion scope of target and thickness revision board 35 (with 55).As shown in figure 11, corrosion scope E near the center of target 29a in the form of a ring.As mentioned above, present embodiment can shorten the driving distance of thickness correction 35, so as shown in figure 11, when releasing before the thickness revision board 35 relative targets, also can shorten this distance, can reduce influencing each other of revision board 35 and corrosion scope E.
Film takes out the explanation of operation
After the film forming operation of film forming operation of silicon oxide and niobium oxides finishes, carry out the operation that film forming substrate S is taken out from vacuum vessel 11.
At first, keep load locking room 11B and film to form the essentially identical vacuum state (10 of chamber 11A -2Pa～10Pa).Then, open a 11b.Then, substrate fixture 13 is formed chamber 11A from film and move into load locking room 11B.Then, close a 11b once more, load locking room 11B exhaust makes air pressure consistent with normal atmosphere, and simultaneously, c opens with door.Take off substrate S from substrate fixture 13 then, finish the operation of taking out film.
Then, carry out film forming described film forming preparatory process, the film forming operation of silicon oxide, the film forming operation of niobium oxides, taking-up film operation repeatedly.At this moment, for the film forming preparatory process, film forms chamber 11A and has been in vacuum state, is not in 10 so do not need to make film to form chamber 11A -2The operation of the vacuum state of Pa～10Pa.Be present embodiment carry out described film forming preparatory process, the film forming operation of silicon oxide, the film forming operation of niobium oxides repeatedly, when taking out the film operation, take out operation at film forming preparatory process and film, needn't make film form chamber 11A and return atmospheric pressure state, so can keep film to form the vacuum state of chamber 11A always.The internal medium that whereby can stabilizing films forms chamber 11A.
The embodiment of above-mentioned explanation can be done the change of following (a)～(e).In addition, change that also can appropriate combination (a)～(e).In addition, in the following explanation, the parts identical with above-mentioned embodiment use identical symbol to describe.
(a) in the above-mentioned embodiment, be provided with masking shield 36,56, but when on substrate S, forming the film etc. of homogeneous film thickness, also masking shield 36,56 can be set.
(b) in the above-mentioned embodiment, the revision board drive unit is by revision board motor 71a, 71b; Drive shaft 72a, 72b; Conical gear 73a, 73b; Conical gear 74a, 74b; Screw rod 75a, 75b; Nut 76a, 76b constitute, but revise small pieces 35a as long as its structure can move 1, 35a 2, 35a 3... revise small pieces 35b 1, 35b 2, 35b 3... or the like, the revision board drive unit also can use other structures.For example can use the pinion(gear), the tooth bar that are fixed on drive shaft 72a, the 72b to move and revise small pieces 35a 1, 35a 2, 35a 3... revise small pieces 35b 1, 35b 2, 35b 3... or the like.
(c) in the above-mentioned embodiment, what import to reaction process district 60 as reactant gas is oxygen, plasma treatment beyond the oxide treatment for example imports ozone, nitrous oxide (N but the gas that also can import other is applicable to the present invention 2Oxidizing gas such as O), nitriability gases such as nitrogen, carbonization gases such as methane, fluorine gas, tetrafluoro-methane (CF 4) wait fluoridizing property gas etc.
(d) in the above-mentioned embodiment, use the material of silicon, use the material of niobium, but this does not constitute qualification, can use the oxide compound of these materials yet as target 49a, 49b as target 29a, 29b.In addition, can also use aluminium (Al), titanium (Ti), zirconium (Zr), tin (Sn), chromium (Cr), tantalum (Ta), tellurium (Te), iron (Fe), magnesium (Mg), hafnium (Hf), nickel-chromium (Ni-Cr), indium-Xi metals such as (In-Sn).In addition, also can use the compound of these metals, for example, Al 2O 3, TiO 2, ZrO 2, Ta 2O 5, HfO 2Deng.Certainly, the material of target 29a, 29b, 49a, 49b can be all identical.When using these targets,, form Al by the plasma treatment in the reaction process district 60 2O 3, TiO 2, ZrO 2, Ta 2O 5, SiO 2, Nb 2O 5, HfO 2, MgF 2Deng blooming or insulating film, conducting films such as ITO, Fe 2O 3Deng magnetic film, superhard films such as TiN, CrN, TiC.(Ti, Zr Si) compare, as TiO with metal 2, ZrO 2, SiO 2, Nb 2O 5, Ta 2O 5The sputtering rate of such insulativity metallic compound is very slow, yields poorly, and is effective especially to this sputter equipment of the present invention.
(e) in the above-mentioned embodiment, target 29a and target 29b, target 49a and target 49b are identical materials, but also can be different materials.When using identical metallic target, as mentioned above,, when using different metallic targets, on substrate, form the incomplete reaction thing of alloy by sputtering at the incomplete reaction thing that forms single metal on the substrate.

Claims (5)

1. sputter equipment, its be by the tabular target that is installed in vacuum vessel inside is carried out sputter on the substrate of the inside of described vacuum vessel revolution film forming sputter equipment;
It is characterized by, it is furnished with substrate fixture and thickness revision board, and is furnished with the revision board drive unit; The described substrate of described substrate fixture clamping makes described substrate revolution, described thickness revision board is arranged between described target and the described substrate, relative with described target, be used for the thickness of the film that forms is revised, described thickness revision board is made of the 1st revision board and the 2nd revision board, described the 1st revision board and described the 2nd revision board are made of a plurality of correction small pieces that are provided with in succession along described substrate hollow shaft direction respectively, with certain spacing distance setting, a plurality of correction small pieces that constitute a plurality of correction small pieces of described the 1st revision board and constitute described the 2nd revision board are driven by described revision board drive unit along described projected footprint direction the correction small pieces that constitute the correction small pieces of described the 1st revision board and constitute the 2nd revision board along the projected footprint direction of the projection of track on described target of described substrate revolution.
2. sputter equipment as claimed in claim 1, it is characterized by, described sputter equipment also is furnished with the plasma producing apparatus that produces plasma body, and described plasma producing apparatus is positioned at the space of the described substrate fixture of subtend, and this space is different from the space between described substrate fixture and the described target.
3. sputter equipment as claimed in claim 1 or 2, it is characterized by, it is furnished with switch door and gas barrier, the film that sputter is carried out in the inside that described switch door is separated described vacuum vessel forms chamber and load locking room, described gas barrier makes described film form chamber and the exhaust independently of described load locking room, and described load locking room is used for described substrate is moved into described vacuum vessel inside.
4. film forming method, it is to use following sputter equipment, by the tabular target that is installed in vacuum vessel inside is carried out sputter on substrate film forming method, described sputter equipment is furnished with a plurality of correction small pieces, and be separated out film in the inside of described vacuum vessel and form chamber and load locking room, described correction small pieces interdict the atom that part disperses out from described target between described tabular target and described substrate, being characterized as of described film forming method, it comprises following operation: at described load locking room substrate is installed in operation on the substrate fixture; Make described load locking room be in the operation of vacuum state; Described substrate fixture is formed the operation that move the chamber from described load locking room to the described film of vacuum state; Described film form make described substrate revolution in the chamber on described substrate film forming operation; Described substrate fixture is sent to the operation of the described load locking room of vacuum state; Keep described film and form the chamber, make described load locking room return to the operation of atmospheric pressure state and the operation of taking off described substrate from described substrate fixture simultaneously; In described film forming operation, drive described correction small pieces along the projected footprint direction of the projection of described substrate revolution track on described target.
5. film forming method as claimed in claim 4, described formation film operation is made of sputtering process and reaction process, described sputtering process forms film by the sputter to described target, and described reaction process carries out plasma treatment by the film that described sputtering process is formed increases the thickness of the film of described sputtering process formation.
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US20200010948A1 (en) * 2018-07-05 2020-01-09 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Shielded sputter deposition apparatus and method
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