CN100403559C - Buffering layer of ternary nitride for nitride luminescent assembly and its production - Google Patents
Buffering layer of ternary nitride for nitride luminescent assembly and its production Download PDFInfo
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- CN100403559C CN100403559C CNB2004100597305A CN200410059730A CN100403559C CN 100403559 C CN100403559 C CN 100403559C CN B2004100597305 A CNB2004100597305 A CN B2004100597305A CN 200410059730 A CN200410059730 A CN 200410059730A CN 100403559 C CN100403559 C CN 100403559C
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000003139 buffering effect Effects 0.000 title claims 2
- 238000000034 method Methods 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 230000008018 melting Effects 0.000 claims abstract 4
- 238000002844 melting Methods 0.000 claims abstract 4
- 238000000576 coating method Methods 0.000 claims description 64
- 239000011248 coating agent Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims description 28
- 239000000470 constituent Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 4
- 229910020068 MgAl Inorganic materials 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- 239000007789 gas Substances 0.000 abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- 229910002601 GaN Inorganic materials 0.000 description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 24
- 239000004411 aluminium Substances 0.000 description 22
- 238000003475 lamination Methods 0.000 description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- 239000000956 alloy Substances 0.000 description 17
- 229910045601 alloy Inorganic materials 0.000 description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- 230000007704 transition Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005915 ammonolysis reaction Methods 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- -1 aluminium gallium nitride Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000002370 organoaluminium group Chemical group 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The present invention relates to a ternary nitride buffer layer with a nitride light-emitting component, which comprises a base plate, a ternary nitride buffer layer formed on the base plate, a first conduction type nitride semiconductor layer formed on the ternary nitride buffer layer, a light-emitting layer formed on the first conduction type nitride semiconductor layer, and a second conduction type nitride semiconductor layer formed on the light-emitting layer, wherein the ternary nitride buffer layer has a manufacture method that a first gas reaction source containing an element in a first III group is led into the buffer layer at a first preset temperature, and the temperature of a melting point of the element in the first III group is smaller than the first preset temperature, wherein the element in the first III group is deposited on the base plate; a second gas reaction source containing an element in a second III group and a third gas reaction source containing a nitrogen element are led into the buffer layer at a second preset temperature; the element in a second III group and the nitrogen element react with the element deposited on the base plate in the first III group, so the ternary nitride buffer layer is formed, wherein the second preset temperature is not lower than the temperature of the melting point of the element in the first III group. The manufacture method can simplify technology and can reduce production cost.
Description
Technical field
The present invention relates to a kind of resilient coating and manufacture method thereof of luminescence component, especially relate to a kind of ternary nitride resilient coating and manufacture method thereof of nitride light-emitting assembly.
Background technology
The development and application of nitride light-emitting assembly is quite extensive and have importance, and its application comprises red signal lamp used by rail workers source, electronic product backlight, outdoor full color billboard, white-light illuminating, ultraviolet light, high-density laser application etc.Can this emerging application grow up fast, and the problem that main urgent need is improved is that brightness promotes, the electrical and stable improvement of epitaxy technique.
On the whole traditional nitride assembly all goes up the nitride resilient coating that forms AlGaInN series in Sapphire Substrate (substrate), carries out nitride epitaxial technology again on this resilient coating; Because even the problem of lattice constant match up till now, still can't effectively reduce dislocation density; It is generally acknowledged, the density of dislocation and the quality of assembly have suitable relation, for the nitride growth quality that improves, traditional two stage of nitride epitaxial technology utilization flop-in method (two step growth), just the GaN with low temperature (500～600 ℃) is used as resilient coating, pass through specific temperature-rise period and high temperature (1000～1200 ℃) afterwards again and handle and to make (Crystallization) after its crystalization, continue the epitaxial growth of each extension lamination (laminated) again.Because the quality of resilient coating directly influences follow-up extension quality, the all necessary careful control of up to a hundred extension parameters such as the ratio of the answer of the thickness of resilient coating and temperature, intensification and recrystallization process, various reacting gas air-flows and flow, therefore cause the complexity of technology and the lifting of degree of difficulty, add that the growth temperature needs to improve, low temperature switches, stable consuming time of heating and cooling process and waiting temperature reduced production efficiency virtually.
Summary of the invention
When how this case inventor solves aforementioned all problem in thinking, think that it comprises substrate if a kind of nitride light-emitting assembly is provided; Be formed at the ternary nitride resilient coating on this substrate; And be formed at nitride light-emitting lamination on this resilient coating, the manufacture method that it is characterized in that this ternary nitride resilient coating, it comprises: in reaction chamber, feed the first gas reaction source that contains an III family element down in predetermined temperature, wherein this predetermined temperature is higher than the fusing point of an III family element, make an III family element decompose and be deposited on this substrate surface and form transition zone, because this predetermined temperature is higher than an III family element fusing point, so between the III family atoms of elements in the transition zone, the combination of unlikely in fact formation tightening key; Then under the temperature that is not less than an III family element fusing point, feed again and contain second gas reaction source of the 2nd III family element and the 3rd gas reaction source of nitrogenous element, make in the 2nd III family element atom and nitrogen-atoms and the aforementioned transition zone III family element atom generation mutually counterdiffusion new arrangement of laying equal stress on bond close, and form this ternary nitride resilient coating, and continue follow-up epitaxy technique formation nitride light-emitting lamination.
Work simplification according to the formed resilient coating of method for making of the present invention, can simplify heating and cooling process numerous and diverse in the traditional handicraft and time, and look arts demand, the 2nd III family element can be chosen to be gallium element, make after finishing an III family element transition layer of suitable thickness, more can directly carry out the epitaxial step of follow-up high-temperature ammonolysis gallium lamination, this ternary nitride resilient coating can form naturally therebetween, do not need special processing, therefore can significantly simplify process complexity, effectively promote the control of epitaxial film quality, and reduce production cost simultaneously.
Main purpose of the present invention is to provide a kind of resilient coating of nitride light-emitting assembly, and the manufacture method of this resilient coating replaces the manufacture method of known nitride resilient coating, to simplify epitaxy technique, reduces production cost.
Description of drawings:
Fig. 1 is a schematic diagram, shows a kind of nitride light-emitting assembly with ternary nitride resilient coating according to preferred embodiment of the present invention;
Fig. 2 is a schematic diagram, shows a kind of nitride light-emitting assembly with ternary nitride resilient coating according to preferred embodiment of the present invention;
Fig. 3 a is the photo of taking with the interfere type light microscope, shows the surface of not using resilient coating growth GaN layer;
Fig. 3 b is the photo of taking with the interfere type light microscope, shows the GaN laminar surface that uses tradition two-stage low temperature GaN resilient coating to grow up;
Fig. 3 c is the photo of taking with the interfere type light microscope, shows the GaN laminar surface of the AlGaN resilient coating growth of using the technology of the present invention;
Fig. 4 is the cross-sectional images that through mode electron microscope (TEM) is observed;
Fig. 5 is the real-time reflectivity spectral line chart of epitaxial growth;
Fig. 6 a is X-ray (X-Ray) (a 0004) diffraction spectra line chart, with the GaN layer X-ray spectral line that makes of tradition two-stage flop-in method;
Fig. 6 b is X-ray (a 0004) diffraction spectra line chart, the GaN layer X-ray spectral line that makes with the present invention.
Symbol description
10 Sapphire Substrate
11 aluminium gallium nitride alloy resilient coatings
12 N type nitride semiconductor light-emitting laminations
121 epi region
122 N type electrode contact areas
The a plurality of mqw light emitting layers of 13 nitride
14 P type nitride-based semiconductor laminations
15 metal transparency conducting layers
16 N type electrodes
17 P type electrodes
28 transparent conductive oxide layers
29 reverse tunnel contact layers
Embodiment
Seeing also Fig. 1, is a kind of nitride light-emitting assembly 1 with aluminium gallium nitride alloy (AlGaN) resilient coating according to preferred embodiment of the present invention, comprises Sapphire Substrate 10; Be formed at the aluminium gallium nitride alloy resilient coating 11 on this Sapphire Substrate; Be formed at the N type nitride-based semiconductor lamination 12 on this aluminium gallium nitride alloy resilient coating 11, wherein this N type nitride-based semiconductor lamination 12 comprises epi region 121 and N type electrode contact area 122 away from the surface of substrate 10; Be formed at a plurality of mqw light emitting layers 13 of gallium nitride/InGaN on this epi region 121; Be formed at the P type nitride-based semiconductor lamination 14 on a plurality of mqw light emitting layers 13 of this nitride; Be formed at the metal transparency conducting layer 15 on the P type nitride-based semiconductor lamination 14; Be formed at the N type electrode 16 on the N type electrode contact area 122; And be formed at P type electrode 17 on this metal transparency conducting layer 15.
The formation step of the aluminium gallium nitride alloy resilient coating in the present embodiment is included in 800 ℃ and feeds organo-aluminium reaction source TMAl down, makes it form rich aluminium transition zone; Under low V/III ratio condition (V/III＜1000), feed organic gallium reaction source TMGa and nitrogen reaction source NH3; Again in the high-temperature ammonolysis gallium layer of 1050 ℃ of growth V/III ratios (V/III＞2000).Therebetween, the aluminium atom in the rich aluminium transition zone can upwards spread, nitrogen-atoms and the gallium atom of its top also can spread downwards and produce bond with aforementioned aluminium atom and merge and rearrange, and then formation aluminium gallium nitride alloy resilient coating.
Embodiment 2
According to another preferred embodiment of the present invention is a kind of nitride light-emitting assembly 2 with aluminium gallium nitride alloy (AlGaN) resilient coating, and its modular construction is similar to embodiment 1, and only the material of resilient coating is different with method for making.The formation step of this aluminium gallium nitride alloy resilient coating is as follows:
Under 1020 ℃, feed organo-aluminium reaction source TMAl, make it form rich aluminium transition zone; Feed organic gallium reaction source TMGa and nitrogen reaction source NH down in uniform temp
3, the high-temperature ammonolysis gallium lamination of directly growing up; Therebetween, the aluminium atom in the rich aluminium transition zone can upwards spread, nitrogen-atoms and the gallium atom of its top also can spread downwards and produce bond with aforementioned aluminium atom and merge and rearrange, and then formation aluminium gallium nitride alloy resilient coating.
In the nitride light-emitting assembly with aluminium gallium nitride alloy (AlGaN) resilient coating of the embodiment of the invention 1 and 2 the metal transparency conducting layer can also be transparent conductive oxide layer replace.Because transparent conductive oxide layer has higher penetrance than the conventional metals transparency conducting layer, so can further improve luminous efficiency again.
See also Fig. 2, according to a kind of nitride light-emitting assembly 3 of another preferred embodiment of the present invention with aluminium gallium nitride alloy (AlGaN) resilient coating, its is in metal transparency conducting layer in this P type nitride-based semiconductor lamination 14 on different with the nitride light-emitting assembly 1 with aluminium gallium nitride alloy (AlGaN) resilient coating and 2 replaces with transparent conductive oxide layer 28, form the reverse tunnel contact layer 29 of high concentration N type between P type nitride-based semiconductor lamination 14 and the transparent conductive oxide layer 28, its thickness is less than 10nm, and its carrier concentration is higher than 1 * 10
19Cm
-3More than.Because this transparent conductive oxide layer 28 is difficult for forming good Ohmic contact (nurse difficult to understand contacts) with P type nitride-based semiconductor lamination 14, so by being formed at the reverse tunnel contact layer 29 of high concentration N type therebetween, form good Ohmic contact between the reverse tunnel contact layer 29 of this transparent conductive oxide layer 28 and this high concentration N type and make; And when light-emitting diode operates in forward bias voltage drop, the interface of the reverse tunnel contact layer of this N type and P type nitride-based semiconductor lamination just is in the effect of reverse bias and forms depletion layer, therefore the reverse tunnel contact layer 29 of N type is not thick in fact again, so the charge carrier in the transparent conductive oxide layer 28 can enter in the P type semiconductor lamination 14 by tunnel effect, and make assembly possess the characteristic of low operation bias voltage.In the nitride light- emitting assembly 1,2 or 3 with aluminium gallium nitride alloy (AlGaN) resilient coating, its aluminium gallium nitride alloy (AlGaN) resilient coating can other ternary nitride resilient coating replace, for example InGaN (InGaN) or indium nitride aluminium (InAlN) resilient coating.
Fig. 3 is the die surfaces of taking with the interfere type light microscope, be respectively 3a do not use resilient coating, 3b use low temperature gallium nitride resilient coating that the tradition two-stage grows up, and 3c use aluminium gallium nitride alloy ternary nitride resilient coating of the present invention, grow up again die surfaces state behind the high-temperature ammonolysis gallium layer, can find not use the small pieces of resilient coating, its surface is the cloudy surface shape, does not have specific crystal habit.And use the die surfaces of aluminium gallium nitride alloy ternary nitride resilient coating of the present invention, can reach and the identical good specular surface (mirror-like) of tradition two-stage flop-in method.
We find will make the outer die surfaces of delaying present the required buffer layer thickness of mirror status according to method of the present invention, and the buffer layer thickness that grow up traditional two-stage is for thin.See also Fig. 4, it is the cross-sectional images of observing with through mode electron microscope (TEM), and as seen the only about 7nm of its buffer layer thickness can make die surfaces present mirror status, and the resilient coating optimum thickness range that the tradition two-stage grows up just can obtain the die surfaces of minute surface attitude about 20～40nm.
Fig. 5 is for using aluminium gallium nitride alloy ternary nitride resilient coating technology of the present invention, the real-time reflectivity spectral line chart of growth of the gallium nitride film that the preparation Trace Silicon is mixed.Can find out the signal of this transition zone formation and the signal of follow-up high-temperature ammonolysis gallium film growth among the figure.After this gallium nitride film growth finishes, measure with x-ray diffractometer and Hall (Hall), the x-ray diffraction pattern halfwidth that records its (0004) respectively is 232 second of arcs (arcsec) (referring to Fig. 6 b), and the carrier concentration of Hall is 1 * 10
17Cm
-3, carrier mobility (mobility) is 690cm
2/ V.s, compared to control group--with the result of tradition two-stage resilient coating technology, the x-ray diffraction pattern halfwidth of (0004) is that (referring to Fig. 6 a), the carrier concentration of Hall is 1 * 10 to 269 second of arcs
17Cm
-3, carrier mobility (mobility) is 620cm
2/ V.s shows to truly have obvious lifting according to the prepared epitaxial film quality of the present invention.
Blue light-emitting diode (the wavelength～470nm) the comparison of characteristic of table 1 for making according to prepared light-emitting diode characteristic of the technology of the present invention and tradition two-stage resilient coating technology.By showing in the data, no matter it is on brightness, forward bias voltage drop, backward current or reverse bias characteristic, all can reach and the similar level of tradition two-stage growth technology, its result in life test does not also have evident difference with conventional art, but as previously mentioned, technology of the present invention can significantly can be omitted numerous and diverse heating and cooling process and time, simplify process complexity, effectively promote the control of epitaxial film quality, and reduce production cost simultaneously, the tangible progressive of historical facts or anecdotes tool.
The LED characteristic of table 1 the technology of the present invention and conventional art relatively
| Brightness under the 20mA electric current (mcd) | Forward bias voltage drop under the 20mA electric current (V) | Backward current under the 5V reverse bias (μ A) | Reverse bias (V) under the 10 μ A backward currents | |
| Tradition two-stage flop-in method resilient coating | 37～40 | 3.14-3.25 | 0.00-0.01 | 24-32 |
| Ternary nitride resilient coating technology of the present invention | 38～42 | 3.17-3.24 | 0.00-0.01 | 20-33 |
In the various embodiments described above, P type nitride-based semiconductor lamination comprises P type nitride contact layer, and P type nitride bond course; This N type nitride-based semiconductor lamination comprises N type nitride contact layer, and N type nitride bond course; This P type nitride contact layer comprises a kind of material that is selected from AlN, GaN, AlGaN, InGaN and the constituent material group of AlInGaN institute; This N type nitride contact layer comprises a kind of material that is selected from AlN, GaN, AlGaN, InGaN and the constituent material group of AlInGaN institute; This N type or P type nitride constraint series of strata comprise at least a material that is selected from AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort; Sapphire Substrate also can be replaced by at least a material in SiC, GaAs, CaN, AlN, GaP, Si, ZnO, MgO and the glass institute constituent material cohort or other replaceable material; The ternary nitride resilient coating can comprise a kind of material that is selected from InGaN, AlGaN and the constituent material group of InAlN institute; N type nitride-based semiconductor lamination can comprise a kind of material that is selected from AlN, GaN, AlGaN, InGaN and the constituent material group of AlInGaN institute; The a plurality of mqw light emitting layers of nitride can comprise a kind of material that is selected from GaN, InGaN and the constituent material group of AlInGaN institute; P type nitride-based semiconductor lamination can comprise a kind of material that is selected from AlN, GaN, AlGaN, InGaN and the constituent material group of AlInGaN institute; These metal electrically conducting transparent series of strata comprise at least a material that is selected from Ni/Au, NiO/Au, Ta/Au, TiWN and the TiN institute constituent material cohort; This transparent conductive oxide layer is to comprise at least a material that is selected from tin indium oxide, cadmium tin, antimony tin, zinc oxide aluminum and the zinc-tin oxide institute constituent material cohort.
The above person only is preferred embodiment of the present invention, and scope of the present invention is not limited to these preferred embodiments, and is all according to any change that the present invention did, and all belongs to the scope of the present patent application patent.Therefore to those skilled in the art, do not breaking away under claim of the present invention and the spirit, when making any change.
Claims (14)
1. the manufacture method of the ternary nitride resilient coating of a nitride light-emitting assembly, its step comprises at least:
Substrate is provided;
Feed the first gas reaction source that contains an III family element under first predetermined temperature, the melting temperature of an III family element is less than this first predetermined temperature, and wherein an III family element deposition is on this substrate; And
Under second predetermined temperature, feed and contain second gas reaction source of the 2nd III family element and the 3rd gas reaction source of nitrogenous element, form the ternary nitride resilient coating with an III family element reaction that is deposited on this substrate, wherein should be not less than the melting temperature of an III family element at second predetermined temperature.
2. the manufacture method of the ternary nitride resilient coating of nitride light-emitting assembly as claimed in claim 1, wherein, this substrate is to comprise to be selected from sapphire, GaN, AlN, SiC, GaAs, GaP, Si, ZnO, MgO, MgAl
2O
4And at least a material in the glass institute constituent material cohort.
3. the manufacture method of the ternary nitride resilient coating of nitride light-emitting assembly as claimed in claim 1, wherein, this first predetermined temperature is essentially more than 500 ℃.
4. the manufacture method of the ternary nitride resilient coating of nitride light-emitting assembly as claimed in claim 1, wherein, this second predetermined temperature is essentially more than 700 ℃.
5. the manufacture method of the ternary nitride resilient coating of nitride light-emitting assembly as claimed in claim 1, wherein, unit of III family prime system comprises at least a material that is selected from Al, Ga and the In institute constituent material cohort.
6. the manufacture method of the ternary nitride resilient coating of nitride light-emitting assembly as claimed in claim 1, wherein, unit of the 2nd III family prime system comprises at least a material that is selected from Al, Ga and the In institute constituent material cohort.
7. the manufacture method of the ternary nitride resilient coating of nitride light-emitting assembly as claimed in claim 1, wherein, the thickness of this ternary nitride resilient coating is between between the 1nm to 500nm.
8. the manufacture method of the ternary nitride resilient coating of nitride light-emitting assembly as claimed in claim 1, wherein, these ternary nitride buffering series of strata comprise at least a material that is selected from InGaN, AlGaN and the InAlN institute constituent material cohort.
9. a nitride light-emitting assembly comprises the made ternary nitride resilient coating that causes of each manufacture method in the claim 1 to 8.
10. nitride light-emitting assembly as claimed in claim 9, wherein, this nitride light-emitting assembly comprises substrate at least, is formed at this ternary nitride resilient coating on this substrate, is formed at the first conductivity type nitride semiconductor layer on this ternary nitride resilient coating, is formed at the luminescent layer on this first conductivity type nitride semiconductor layer and is formed at the second conductivity type nitride semiconductor layer on this luminescent layer.
11. nitride light-emitting assembly as claimed in claim 10, wherein, this substrate is to comprise to be selected from sapphire, GaN, AlN, SiC, GaAs, GaP, Si, ZnO, MgO, MgAl
2O
4And at least a material in the glass institute constituent material cohort.
12. nitride light-emitting assembly as claimed in claim 10, wherein, this first conductivity type nitride semiconductor layer comprises at least a material that is selected from AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort.
13. nitride light-emitting assembly as claimed in claim 10, wherein, these luminous series of strata comprise at least a material that is selected from AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort.
14. nitride light-emitting assembly as claimed in claim 10, wherein, these second conductivity type nitride semiconductor series of strata comprise at least a material that is selected from AlN, GaN, AlGaN, InGaN and the AlInGaN institute constituent material cohort.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100597305A CN100403559C (en) | 2004-06-21 | 2004-06-21 | Buffering layer of ternary nitride for nitride luminescent assembly and its production |
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| CNB2004100597305A CN100403559C (en) | 2004-06-21 | 2004-06-21 | Buffering layer of ternary nitride for nitride luminescent assembly and its production |
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| CN100403559C true CN100403559C (en) | 2008-07-16 |
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| TWI547585B (en) * | 2014-02-14 | 2016-09-01 | 國立交通大學 | Method for growing aluminum indium nitride films on silicon substrates |
| CN105633232B (en) * | 2014-10-30 | 2019-04-16 | 山东浪潮华光光电子股份有限公司 | A kind of GaN base LED epitaxial structure and preparation method thereof with GaN buffer layer substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
| US6115399A (en) * | 1994-09-14 | 2000-09-05 | Rohm Co. Ltd. | Semiconductor light emitting device |
| EP1111663A2 (en) * | 1999-12-20 | 2001-06-27 | Nitride Semiconductors Co., Ltd. | GaN-based compound semiconductor device and method of producing the same |
| US6555846B1 (en) * | 1999-06-10 | 2003-04-29 | Pioneer Corporation | Method for manufacturing a nitride semiconductor device and device manufactured by the method |
-
2004
- 2004-06-21 CN CNB2004100597305A patent/CN100403559C/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
| US6115399A (en) * | 1994-09-14 | 2000-09-05 | Rohm Co. Ltd. | Semiconductor light emitting device |
| US6555846B1 (en) * | 1999-06-10 | 2003-04-29 | Pioneer Corporation | Method for manufacturing a nitride semiconductor device and device manufactured by the method |
| EP1111663A2 (en) * | 1999-12-20 | 2001-06-27 | Nitride Semiconductors Co., Ltd. | GaN-based compound semiconductor device and method of producing the same |
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| CN1713405A (en) | 2005-12-28 |
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