CN100399502C - Chip washing process and method for forming opening therefor - Google Patents
Chip washing process and method for forming opening therefor Download PDFInfo
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- CN100399502C CN100399502C CNB2005101097861A CN200510109786A CN100399502C CN 100399502 C CN100399502 C CN 100399502C CN B2005101097861 A CNB2005101097861 A CN B2005101097861A CN 200510109786 A CN200510109786 A CN 200510109786A CN 100399502 C CN100399502 C CN 100399502C
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Abstract
The technique for cleaning out wafers is suitable to be carried out after an etching procedure is executed for a wafer. The wafer possesses center of circle, radius and edge of a wafer. The method includes operations: a nozzle transfers cleaning solution above the wafer; the nozzle moves along a moving path by using wafer center of circle as center; back and forth movement is carried out above neighborhood of center of wafer.
Description
Technical field
The present invention relates to a kind of semiconductor technology, particularly relate to and a kind ofly get on to remove the method for remaining polymer from wafer.
Background technology
In semiconductor technology, the Patternized technique of a material layer generally includes the lithography step that forms the patterning photoresist, and is thereafter the etching step of mask with the patterning photoresist.Because photoresist is an organic substance, thus after etching step finishes, the etch residue that the more residual compositions of regular meeting are polymer in the substrate, it will cause many problems.For example, in the technology of inlaying opening (damascene opening), promptly often there is the polymer of etching residue to be formed on the sidewall of opening, influence subsequent technique as in semiconductor technology, if this polymer is not removed with proper method, it will influence follow-up metal filled technology, and therefore reduce the quality of metal interconnecting.
For solving the problem of polymer residue, prior art is after etching step finishes, and removes residual polymer in the substrate with wet-cleaning method (wet clean), and the solution that its utilization contains interfacial agent cleans substrate.Yet for adopting the opening process of inlaying of metal hard mask layer, the polymer of inlaying on the opening sidewalls in its substrate (wafer) but often has the incomplete situation of cleaning, causes the quality of metal interconnecting to be greatly affected, and makes the rate of finished products of product significantly reduce.
Summary of the invention
Purpose of the present invention is providing a kind of wafer cleaning process exactly, can effectively remove after carrying out etch process, residues in the polymer on the wafer surface.
A further object of the present invention provides a kind of method that forms opening, can effectively clear up via carrying out an etch process forming after the opening, on wafer surface residual polymer, and have preferred cleaning stability.
The present invention proposes a kind of wafer cleaning process, is applicable to carry out carrying out after the etch process on a wafer.Wherein wafer has a wafer center of circle, a wafer radius and a Waffer edge.And the method comprises with a nozzle and conducts a cleaning solution to wafer top, and nozzle is a center with the wafer center of circle simultaneously. along a mobile route, extending in the formed zone of this wafer radius of about 0%-30% to Waffer edge all around, move around with the wafer center of circle.
Again according to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, wherein preferably nozzle along mobile route, with the wafer center of circle to around Waffer edge extend in about 0% to 5% the formed zone of this wafer radius, move around.
According to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, wherein when this nozzle conducted this cleaning solution to this wafer top, this wafer was a pivot with this wafer center of circle, carries out rotation action.
According to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, wherein above-mentioned rotation action comprises a clockwise rotation action and a counterclockwise rotation action.
In addition, the present invention proposes a kind of method that forms opening, is applicable to a wafer, and a dielectric layer and a hard mask layer are arranged on this wafer, and this wafer has a wafer center of circle, a wafer radius and a Waffer edge, and wherein hard mask layer is positioned at the dielectric layer top.And the method comprises and carries out an etch process patterning hard mask layer and a dielectric layer earlier, to form an opening in dielectric layer.Afterwards, carry out a wafer cleaning process, in wafer top with a nozzles spray one cleaning solution, and nozzle is a center with the wafer center of circle simultaneously, along a mobile route, extending in the formed zone of wafer radius of about 0%-30% to Waffer edge all around, move around with the wafer center of circle.
According to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, wherein preferably nozzle, moves around extending in the formed zone of about wafer radius of 0% to 5% to Waffer edge all around with the wafer center of circle along mobile route.
According to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, wherein when this nozzle conducted this cleaning solution to this wafer top, this wafer was a pivot with this wafer center of circle, carries out rotation action.
According to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, wherein above-mentioned rotation action comprises a clockwise rotation action and a counterclockwise rotation action.
According to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, its split shed comprises a groove, an interlayer hole and a damascene opening.
According to the described a kind of wafer cleaning process of the preferred embodiments of the present invention, wherein hard mask layer comprises a metal hard mask layer, and its material comprises titanium nitride.
Among the present invention, prove via a series of experimental data, the nozzle that sprays cleaning solution need not move around above wafer on a large scale, and only need above the wafer center of circle (with the wafer center of circle is the center among a small circle, to around Waffer edge extend to the zone of about wafer radius of 0% to 30%) in move, just can obtain preferred wafer cleaning performance, and each wafer wash result is stable.Therefore can solve existing residual polyalcohol and clean the problem that is difficult for.
For above and other objects of the present invention, feature and advantage can be become apparent, following conjunction with figs. and preferred embodiment are to illustrate in greater detail the present invention.
Description of drawings
Figure 1A to Fig. 1 C illustrates the diagrammatic sectional view of a dual damascene opening process.
Fig. 2 A illustrate a wafer cleaning process on look sketch.
Fig. 2 B is the translational speed and the distance relation schematic diagram of a washer jet.
Fig. 3 illustrates in wafer cleaning process, is to be the center with the wafer center of circle when nozzle mobile, to around Waffer edge extend to about 80% wafer radius, make when moving around the number of defects statistical chart of on the multi-disc wafer, finding.
Fig. 4 illustrates in wafer cleaning process, is to be the center with the wafer center of circle when nozzle mobile, to around Waffer edge extend to about 30% wafer radius, make when moving around the number of defects statistical chart of on the multi-disc wafer, finding.
The simple symbol explanation
100: substrate
110: dielectric layer
120: hard mask layer
122,124: the intermediate layer
130: patterning photoresist layer
150a: the pre-opening of interlayer hole
150: interlayer hole
160: groove
170: dual damascene openings
180: polymer
190: wafer cleaning process
200: wafer
200a: the wafer center of circle
200b: Waffer edge
202: the scavenge pipe external member
202a: nozzle
202b: end points
204: mobile route
Embodiment
The polymer removal step of this preferred embodiment after with the etching step of dual damascene openings is example, and it is not in order to limit the scope of the invention.
Figure 1A to Fig. 1 C illustrates the diagrammatic sectional view of a dual damascene opening process.At first, please refer to Figure 1A, a substrate 100 is provided, this substrate 100 has a plurality of elements (not illustrating).In substrate 100, form dielectric layer 110, the material of this dielectric layer 110 for example is silica or silica-based (silicon-based) advanced low-k materials, as hydrogeneous silicates (hydrogen silsesquioxane, HSQ), methylic silicates (methylsesquioxane, MSQ) or the like.Then form hard mask layer 120 above dielectric layer 110, its material for example is silicon nitride or metal etc.When hard mask layer 120 is a metal hard mask (metal hard mask) layers, and its material is when being titanium nitride metals such as (TiN), it is formed with intermediate layer (intermediate layer) 122 and 124 up and down usually, for example is inorganic dielectric layer, and it has effects such as resistance barrier and increase adhesive force.
Then, definition hard mask layer 120 and etching be dielectric layer 110 partly, and to form the pre-opening 150a of interlayer hole in dielectric layer 110, it is in the predetermined position that forms interlayer hole.
Then, please refer to Figure 1B, above hard mask layer 120, form patterning photoresist layer 130 in order to the definition groove, be mask with photoresist layer 130 again, use etching method to define hard mask layer 120 once more, and etching dielectric layer 110, be interlayer hole 150 so that the pre-opening 150a of interlayer hole is deepened, above interlayer hole 150, form groove 160 simultaneously.Afterwards, remove photoresist layer 130.This interlayer hole 150 is a dual damascene opening 170 with 160 of grooves, its sidewall be formed with etch process residual polymer 180.
Please refer to Fig. 1 C, 2A and 2B, Fig. 2 A illustrate a wafer cleaning process on look sketch, Fig. 2 B is the translational speed and the distance relation schematic diagram of a washer jet.Shown in Fig. 1 C, 2A and 2B, in order to clean the residual polyalcohol 180 that on the sidewall of opening 170, forms because carrying out etch process, therefore must carry out a wafer cleaning process 190, to spray cleaning solution, flush away residual polyalcohol 180 in wafer 200 (comprising substrate 100) top.This wafer cleaning process 190 for example is to use the aqueous solution that contains interfacial agent.The interfacial agent that is added in this solution for example is a quarternary ammonium salt.
Moreover, please refer to Fig. 2 A and Fig. 2 B, above-mentioned cleaning solution can import a nozzle 202a who is positioned at scavenge pipe external member 202 end points by a scavenge pipe external member 202, and sprays cleaning solution to carry out wafer cleaning process 190 by nozzle 202a above wafer 200 along a mobile route 204.Shown in Fig. 2 A, this mobile route 204 is to be the center with wafer center of circle 200a, moves around between the Waffer edge 200b of 200a both sides, the wafer center of circle.In addition, when carrying out wafer cleaning process 190, for improving the distributing homogeneity of cleaning efficiency and cleaning solution, wafer 200 is a pivot with wafer center of circle 200a, does a clockwise rotation action or inverse clock rotation action.In the present embodiment, this mobile route 204 is a Mobility Center with the other end 202b with respect to nozzle 202a of scavenge pipe external member 202, length (distance between nozzle 202a and the end points 202b just) with scavenge pipe external member 202 is radius, and the arc that draws above wafer 200 is as mobile route 204.Yet in the present invention, the definition of the mobile route of nozzle is not limited to above-mentioned arcuate travel path 204.Just, in practical application, the mobile route of nozzle is so long as be the center with the wafer center of circle, above wafer, along with wafer surface on, carry out moving and get final product back and forth.
Please refer to Fig. 2 B, in the present invention, nozzle 202a is the center with wafer center of circle 200a, in about 30% the zone of the wafer radius around the 200a of the wafer center of circle, moves around.By Fig. 2 B as can be known, when the nozzle position at wafer center of circle 200a when Waffer edge 200b extends about 30% wafer radius place, the translational speed of nozzle 202a is zero.Along with nozzle 202a more and more near wafer center of circle 200a top, the translational speed of nozzle 202a improves, when nozzle 202a crosses wafer center of circle 200a top, the translational speed of nozzle 202a reaches high point, afterwards, along with nozzle 202a away from wafer center of circle 200a, the translational speed of nozzle 202a is decremented to zero.Wherein, the moving range of nozzle 202a, can be to be the center with wafer center of circle 200a, in Waffer edge 200b extends about 0% to 30% wafer radius zone, move repeatedly back and forth, and be the center with wafer center of circle 200a preferably, in Waffer edge 200b extends about 0% to 5% wafer radius zone, move repeatedly back and forth.
Continue it, please refer to Fig. 3 and Fig. 4, Fig. 3 illustrates in wafer cleaning process, is to be the center with the wafer center of circle when nozzle mobile, extend to about 80% wafer radius to Waffer edge all around, do when moving around, the number of defects statistical chart of on the multi-disc wafer, finding, and Fig. 4 illustrates in wafer cleaning process, when nozzle mobile is to be the center with the wafer center of circle, extend to about 30% wafer radius to Waffer edge all around, make when moving around the number of defects statistical chart of on the multi-disc wafer, finding.Number of defects on each wafer of Fig. 3, the defective number average of being found on each wafer among Fig. 4 is on the low side, and it is stable to show that nozzle is only done the cleaning performance that produced of moving around near above the wafer center of circle.
In sum, in the wafer cleaning process of the present invention, the nozzle that sprays cleaning solution need not carry out on a large scale above wafer that (with the wafer center of circle is the center, to around Waffer edge extend to the zone of about 80% wafer radius) move around, only need above the wafer center of circle (with the wafer center of circle is the center among a small circle, to around Waffer edge extend to the zone of about wafer radius of 0% to 30%) in move, just can obtain preferred wafer cleaning performance, and each wafer wash result is stable.Therefore can solve existing residual polyalcohol and clean the problem that is difficult for.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (10)
1. a wafer cleaning process is applicable to and carries out carrying out after the etch process that wherein this wafer has a wafer center of circle, a wafer radius and a Waffer edge on a wafer, and this method comprises:
Conduct a cleaning solution to this wafer top with a nozzle, and this nozzle is a center with this wafer center of circle simultaneously, along a mobile route, with this wafer center of circle to around this Waffer edge extend in the formed zone of this wafer radius of 0%-30%, move around.
2. a wafer cleaning process is applicable to and carries out carrying out after the etch process that wherein this wafer has a wafer center of circle, a wafer radius and a Waffer edge on a wafer, and this method comprises:
Conduct a cleaning solution to this wafer top with a nozzle, and this nozzle is a center with this wafer center of circle simultaneously, along a mobile route, with this wafer center of circle to around this Waffer edge extend in 0% to 5% the formed zone of this wafer radius, move around.
3. a method that forms opening is applicable to a wafer, and a dielectric layer and a hard mask layer are arranged on this wafer, and this wafer has a wafer center of circle, a wafer radius and a Waffer edge, and wherein this hard mask layer is positioned at this dielectric layer top, and this method comprises:
Carry out this hard mask layer of etch process patterning and this dielectric layer, in this dielectric layer, to form an opening; And
Carry out a wafer cleaning process, in this wafer top with a nozzles spray one cleaning solution, and this nozzle is a center with this wafer center of circle simultaneously, along a mobile route, with this wafer center of circle to around this Waffer edge extend in the formed zone of this wafer radius of 0%-30%, move around.
4. the method for formation opening as claimed in claim 3, wherein this opening comprises a groove, an interlayer hole and a damascene opening.
5. the method for formation opening as claimed in claim 3, wherein this hard mask layer comprises a metal hard mask layer.
6. the method for formation opening as claimed in claim 5, wherein the material of this metal hard mask layer comprises titanium nitride.
7. a method that forms opening is applicable to a wafer, and a dielectric layer and a hard mask layer are arranged on this wafer, and this wafer has a wafer center of circle, a wafer radius and a Waffer edge, and wherein this hard mask layer is positioned at this dielectric layer top, and this method comprises:
Carry out this hard mask layer of etch process patterning and this dielectric layer, in this dielectric layer, to form an opening; And
Carry out a wafer cleaning process, in this wafer top with a nozzles spray one cleaning solution, and this nozzle is a center with this wafer center of circle simultaneously, along a mobile route, with this wafer center of circle to around this Waffer edge extend in 0% to 5% the formed zone of this wafer radius, move around.
8. the method for formation opening as claimed in claim 7, wherein this opening comprises a groove, an interlayer hole and a damascene opening.
9. the method for formation opening as claimed in claim 7, wherein this hard mask layer comprises a metal hard mask layer.
10. the method for formation opening as claimed in claim 9, wherein the material of this metal hard mask layer comprises titanium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101097861A CN100399502C (en) | 2005-09-20 | 2005-09-20 | Chip washing process and method for forming opening therefor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101097861A CN100399502C (en) | 2005-09-20 | 2005-09-20 | Chip washing process and method for forming opening therefor |
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| Publication Number | Publication Date |
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| CN1937171A CN1937171A (en) | 2007-03-28 |
| CN100399502C true CN100399502C (en) | 2008-07-02 |
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| CNB2005101097861A Active CN100399502C (en) | 2005-09-20 | 2005-09-20 | Chip washing process and method for forming opening therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102211095B (en) * | 2010-04-02 | 2013-11-06 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of wafer |
| CN103084349A (en) * | 2011-11-03 | 2013-05-08 | 无锡华润上华科技有限公司 | Wafer cleaning method |
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