CN100399005C - Method for producing heat shear stress sensor device based on vacuum adhesive process - Google Patents
Method for producing heat shear stress sensor device based on vacuum adhesive process Download PDFInfo
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- CN100399005C CN100399005C CNB2005100122387A CN200510012238A CN100399005C CN 100399005 C CN100399005 C CN 100399005C CN B2005100122387 A CNB2005100122387 A CN B2005100122387A CN 200510012238 A CN200510012238 A CN 200510012238A CN 100399005 C CN100399005 C CN 100399005C
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- silicon nitride
- nitride film
- shear stress
- stress sensor
- sensor device
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Priority Applications (1)
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CNB2005100122387A CN100399005C (en) | 2005-07-21 | 2005-07-21 | Method for producing heat shear stress sensor device based on vacuum adhesive process |
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CNB2005100122387A CN100399005C (en) | 2005-07-21 | 2005-07-21 | Method for producing heat shear stress sensor device based on vacuum adhesive process |
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CN1900668A CN1900668A (en) | 2007-01-24 |
CN100399005C true CN100399005C (en) | 2008-07-02 |
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CNB2005100122387A Expired - Fee Related CN100399005C (en) | 2005-07-21 | 2005-07-21 | Method for producing heat shear stress sensor device based on vacuum adhesive process |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102817082B (en) * | 2011-06-08 | 2016-06-01 | 无锡华润华晶微电子有限公司 | A kind of preparation method of silicon fiml |
CN102519657B (en) * | 2011-11-22 | 2013-12-11 | 上海交通大学 | Two-dimensional vector flexible thermo-sensitive micro-shearing stress sensor, and array and preparation method thereof |
CN105140155B (en) * | 2015-07-15 | 2018-06-05 | 桂林电子科技大学 | A kind of method for adhering piece for GaAs MMIC reduction process |
CN108117041A (en) * | 2017-12-22 | 2018-06-05 | 中国科学院半导体研究所 | The preparation method of movable micro-nano structure based on dense boron-doping silicon |
CN110828626B (en) * | 2018-08-09 | 2021-02-26 | 上海新微技术研发中心有限公司 | Semiconductor structure and forming method thereof |
CN110868681B (en) * | 2019-11-29 | 2021-09-14 | 绍兴中芯集成电路制造股份有限公司 | MEMS microphone warpage compensation method and MEMS microphone wafer |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6596624B1 (en) * | 1999-07-31 | 2003-07-22 | International Business Machines Corporation | Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier |
US20050017313A1 (en) * | 2002-08-07 | 2005-01-27 | Chang-Feng Wan | System and method of fabricating micro cavities |
CN1587993A (en) * | 2004-07-15 | 2005-03-02 | 上海交通大学 | Bragg raster hydrogen sensor and its preparing process |
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2005
- 2005-07-21 CN CNB2005100122387A patent/CN100399005C/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6596624B1 (en) * | 1999-07-31 | 2003-07-22 | International Business Machines Corporation | Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier |
US20050017313A1 (en) * | 2002-08-07 | 2005-01-27 | Chang-Feng Wan | System and method of fabricating micro cavities |
CN1587993A (en) * | 2004-07-15 | 2005-03-02 | 上海交通大学 | Bragg raster hydrogen sensor and its preparing process |
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CN1900668A (en) | 2007-01-24 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130415 Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130415 |
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Free format text: CORRECT: ADDRESS; FROM: 100029 CHAOYANG, BEIJING TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20130415 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080702 Termination date: 20180721 |