CN100399005C - Manufacturing method of thermal shear stress sensor device based on vacuum bonding process - Google Patents
Manufacturing method of thermal shear stress sensor device based on vacuum bonding process Download PDFInfo
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- CN100399005C CN100399005C CNB2005100122387A CN200510012238A CN100399005C CN 100399005 C CN100399005 C CN 100399005C CN B2005100122387 A CNB2005100122387 A CN B2005100122387A CN 200510012238 A CN200510012238 A CN 200510012238A CN 100399005 C CN100399005 C CN 100399005C
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- silicon
- shear stress
- silicon nitride
- nitride film
- stress sensor
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010931 gold Substances 0.000 claims abstract description 8
- 229910052737 gold Inorganic materials 0.000 claims abstract description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 230000008020 evaporation Effects 0.000 claims abstract description 3
- 238000001704 evaporation Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 34
- 238000005516 engineering process Methods 0.000 claims description 29
- 239000012528 membrane Substances 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 11
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 7
- 230000004224 protection Effects 0.000 claims description 7
- 229910018503 SF6 Inorganic materials 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 6
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000001117 sulphuric acid Substances 0.000 claims description 2
- 235000011149 sulphuric acid Nutrition 0.000 claims description 2
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Abstract
A manufacturing method of a thermal shear stress sensor device based on a vacuum bonding process relates to the technical field of microelectronics, and comprises the following steps: 1. depositing a silicon nitride film on the double surfaces of the double-polished 1# <100> silicon substrate; 2. depositing a polysilicon film on the front silicon nitride film, carrying out boron doping, photoetching, etching the polysilicon film, and cleaning the surface; 3. carrying out front side photoetching, gold evaporation and stripping to form a wiring pattern; 4. photoetching and etching the silicon nitride film on the back silicon nitride film to form a back cavity and a scribing groove corrosion window pattern; 5. protecting the front side, corroding the back silicon to form a cavity and scribing grooves; 6. scribing a single-polished 2# <100> silicon substrate; 7. scribing the 1# silicon wafer after the operation of the step 1-5; and 8, bonding the back surface of the scribed 1# silicon wafer with the polished surface of the scribed 2# silicon wafer in vacuum.
Description
Technical field
The invention belongs to MEMS (micro electro mechanical system) (MEMS) the manufacturing technology field in the microelectric technique, promptly a kind of method of making heat shear stress sensor device based on vacuum bonding technology that adopts.
Background technology
During MEMS (micro electro mechanical system) (MEMS) device is made, some devices comprise that unsettled beam, film or cavity structure often will apply in the silicon substrate surface micromachined " sacrifice layer " technology and make, but keep away unavoidable various layout design, the etching of sacrifice layer, the steps such as release of burn into structural sheet in design and the process, and in the sacrifice layer dispose procedure or after the sacrifice layer formation, last structural sheet is easy to take place the phenomenon with the substrate adhesion, and causes device physical construction to lose efficacy.
Summary of the invention
The purpose of this invention is to provide a kind of method that adopts vacuum bonding technology to make heat shear stress sensor device, be first deposition silicon nitride film, carry out polysilicon resistance film and metal line, corrosion is carried on the back silicon, is directly utilized vacuum bonding to form adiabatic cavity then, finishes the making of heat shear stress sensor device with this.
For achieving the above object, technical solution of the present invention provides a kind of method for making of the heat shear stress sensor device based on vacuum bonding technology, and loaded down with trivial details sacrifice layer bottleneck technology has been avoided in the formation of its insulation cavity, and its step is as follows:
Gold is steamed in step 3, positive photoetching, peels off, and forms wiring figure;
Step 4, photoetching on the silicon nitride film, etch silicon nitride film overleaf form back side cavity and scribe line corrosion window graphics;
Step 5, front protecting, corrosion back of the body silicon forms cavity and scribe line;
Step 6, the single polishing of general 2#＜100〉the silicon chip scribing;
Step 7, with the 1# wafer dicing after the 1-5 step operation;
Step 8, the 1# silicon chip back side that will draw and the polished surface vacuum bonding of drawing good 2# silicon chip.
The method for making of described a kind of heat shear stress sensor device based on vacuum bonding technology, its described step 1, deposition silicon nitride film is gone up on two surfaces in two polishing 1#＜100〉silicon chip, silicon nitride film thickness is 1.5-2.0 μ m, is to adopt low-pressure chemical vapor deposition (LPCVD) method to obtain.
The method for making of described a kind of heat shear stress sensor device based on vacuum bonding technology, its described step 2, at positive deposit polysilicon membrane, be to adopt low-pressure chemical vapor deposition (LPCVD) method, polysilicon membrane thickness is 0.40-0.45 μ m, carrying out boron mixes, optical lithography, with sulfur hexafluoride gas, with the flow of 40-60sccm and the power isotropic etching polysilicon membrane of 40-60w, form the polysilicon resistance film of 150 μ m * 4 μ m, remove the photoresist of remained on surface with the concentrated sulphuric acid.
The method for making of described a kind of heat shear stress sensor device based on vacuum bonding technology, its described step 3, optical lithography, surface electronic beam evaporation gold thin film, gold thin film thickness is 0.08-1 μ m, peels off with acetone, forms the wide wiring figure that is respectively 40-50 μ m and 90-100 μ m.
The method for making of described a kind of heat shear stress sensor device based on vacuum bonding technology, its described step 4, optical lithography on the silicon nitride film overleaf, with sulfur hexafluoride gas, with the flow of 110-130sccm and the power isotropic etching silicon nitride film of 40-60w, up to being carved into silicon substrate, forming 942 μ m * 992 μ m back side chamber etching graph windows and widely be the scribe line corrosion window graphics of 3200-3500 μ m.
The method for making of described a kind of heat shear stress sensor array based on vacuum bonding technology; its described step 5; be to use protection glue Crystalbond 509 to carry out front protecting; at anisotropic etch back of the body silicon in the 30-40% potassium hydroxide solution, under the 80-85 ℃ temperature; up to eroding to silicon nitride film; form cavity and scribe line, being embedded with wide on the scribe line is that the uncorroded silicon beam of 2-2.5mm is as support.
The method for making of described a kind of heat shear stress sensor device based on vacuum bonding technology, its described step 6 will single polishing 2#＜100〉silicon chip scribing machine scribing, scribing is of a size of 8mm * 14mm.
The method for making of described a kind of heat shear stress sensor device based on vacuum bonding technology, its described step 7 is scratched the 1# silicon chip after the 1-5 step operation along scribe line gently with tweezers.
The method for making of described a kind of heat shear stress sensor device based on vacuum bonding technology; its described step 8; for putting on the vacuum gloves, bonding with protection glue Crystalbond 509 under vacuum environment with the 2# silicon wafer polishing face well of drawing with drawing the good 1# silicon chip back side.
The inventive method has been avoided the bottleneck-sacrifice layer process in the common process, has avoided various layout design, the etching of sacrifice layer, the steps such as release of burn into structural sheet.The characteristics of this method are at silicon chip front deposition silicon nitride film and polysilicon membrane; polysilicon membrane is carried out boron to mix; etching forms the polysilicon resistance film bar; make metal line on its surface then; direct wet method anisotropic etch back of the body silicon under front protecting forms cavity and scribe line again, scratches silicon chip with tweezers gently along scribe line; silicon chip last and that another stroke is good is bonding under vacuum environment, thereby forms the insulation cavity.
The inventive method is optimized technology, with low cost, with short production cycle, process stabilizing, can obtain to adopt the heat shear stress sensor device of making based on vacuum bonding technology, is suitable for big production, has certain practical value.
Description of drawings
Fig. 1-1 is to the schematic flow sheet of Fig. 1-7 for the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology of the present invention.
Embodiment
In order to illustrate further content of the present invention, below in conjunction with accompanying drawing the present invention is done detailed description, wherein:
Fig. 1-1 is to Fig. 1-the 7th, process flow diagram of the present invention:
1, as Figure 1-1, go up with low-pressure chemical vapor deposition (LPCVD) method deposition silicon nitride film 101,102 on two surfaces in two polishing 1#＜100〉silicon chip, and thickness is 1.5-2.0 μ m.
2, shown in Fig. 1-2, at front silicon nitride film 101 surfaces low-pressure chemical vapor deposition (LPCVD) method deposit polysilicon membrane, thickness is 0.40-0.45 μ m, carrying out boron mixes, with sulfur hexafluoride gas, with the flow of 40-60sccm and the power isotropic etching polysilicon membrane of 40-60w, form the polysilicon resistance film 103 of 150 μ m * 4 μ m.
3, as Figure 1-3, on silicon nitride film 101 and polysilicon resistance film bar 103, the electron beam evaporation gold thin film, thickness is 0.8-1 μ m, peels off to form the wiring figure 104 that live width is respectively 40-50 μ m and 90-100 μ m.
4, shown in Fig. 1-4, with sulfur hexafluoride gas, with the flow of 110-130sccm and the power isotropic etching back side silicon nitride film 102 of 40-60w, up to being carved into silicon substrate, forming the back side chamber etching graph window of 942 μ m * 992 μ m and widely be the scribe line corrosion window graphics of 3200-3500 μ m.
5, shown in Fig. 1-5, positive 101,103,104 under protection glue Crystalbond 509 protections, with the 30-40% potassium hydroxide solution, under 80-85 ℃ of temperature anisotropic etch back of the body silicon, up to eroding to silicon nitride film 101, form cavity and scribe line.
6, shown in Fig. 1-6, will singly polish 2#＜100〉silicon chip scribing machine scribing, scribing is of a size of 8mm * 14mm.
7, shown in Fig. 1-7, the 1# silicon chip after the 1-5 step operation is scratched along scribe line gently with tweezers, then that its back side and the 2# silicon wafer polishing face well of drawing is bonding with protection glue Crystalbond 509 under vacuum environment.
Claims (9)
1. method for making based on the heat shear stress sensor device of vacuum bonding technology, loaded down with trivial details sacrifice layer bottleneck technology has been avoided in the formation of its insulation cavity, it is characterized in that step is as follows:
Step 1, deposition silicon nitride films are gone up on two surfaces in two polishing 1#＜100〉silicon chip;
Step 2, on the silicon nitride film of front the deposit polysilicon membrane, carry out boron and mix, photoetching, etch polysilicon film, cleaning treatment surface;
Gold is steamed in step 3, positive photoetching, peels off, and forms wiring figure;
Step 4, photoetching on the silicon nitride film, etch silicon nitride film overleaf form back side cavity and scribe line corrosion window graphics;
Step 5, front protecting, corrosion back of the body silicon forms cavity and scribe line;
Step 6, the single polishing of general 2#＜100〉the silicon chip scribing;
Step 7, with the 1# wafer dicing after the 1-5 step operation;
Step 8, the 1# silicon chip back side that will draw and the polished surface vacuum bonding of drawing good 2# silicon chip.
2. the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology according to claim 1, it is characterized in that, described step 1, deposition silicon nitride film is gone up on two surfaces in two polishing 1#＜100〉silicon chip, silicon nitride film thickness is 1.5-2.0 μ m, is to adopt low-pressure chemical vapor deposition method to obtain.
3. the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology according to claim 1, it is characterized in that, described step 2, at positive deposit polysilicon membrane, be to adopt low-pressure chemical vapor deposition method, polysilicon membrane thickness is 0.40-0.45 μ m, carrying out boron mixes, optical lithography, with sulfur hexafluoride gas, with the flow of 40-60sccm and the power isotropic etching polysilicon membrane of 40-60w, form the polysilicon resistance film of 150 μ m * 4 μ m, remove the photoresist of remained on surface with the concentrated sulphuric acid.
4. the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology according to claim 1, it is characterized in that, described step 3, optical lithography, surface electronic beam evaporation gold thin film, gold thin film thickness is 0.08-1 μ m, peels off with acetone, forms the wide wiring figure that is respectively 40-50 μ m and 90-100 μ m.
5. the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology according to claim 1, it is characterized in that, described step 4, optical lithography on the silicon nitride film overleaf, with sulfur hexafluoride gas, with the flow of 110-130sccm and the power isotropic etching silicon nitride film of 40-60w, up to being carved into silicon substrate, forming 942 μ m * 992 μ m back side chamber etching graph windows and widely be the scribe line corrosion window graphics of 3200-3500 μ m.
6. the method for making of a kind of heat shear stress sensor array based on vacuum bonding technology according to claim 1; it is characterized in that; described step 5; be to use protection glue Crystalbond509 to carry out front protecting; at anisotropic etch back of the body silicon in the 30-40% potassium hydroxide solution, under the 80-85 ℃ temperature; up to eroding to silicon nitride film, form cavity and scribe line, being embedded with wide on the scribe line is that the uncorroded silicon beam of 2-2.5mm is as support.
7. the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology according to claim 1 is characterized in that, described step 6 will single polishing 2#＜100〉silicon chip scribing machine scribing, scribing is of a size of 8mm * 14mm.
8. the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology according to claim 1, it is characterized in that, described step 7 is to scratch gently along scribe line with tweezers at the 1# silicon chip of finishing after the 5 steps operation of step 1-5 step.
9. the method for making of a kind of heat shear stress sensor device based on vacuum bonding technology according to claim 1; it is characterized in that; described step 8; for putting on the vacuum gloves, bonding with protection glue Crystalbond 509 under vacuum environment with the polished surface of drawing good 2# silicon chip with drawing the good 1# silicon chip back side.
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| CN102817082B (en) * | 2011-06-08 | 2016-06-01 | 无锡华润华晶微电子有限公司 | A kind of preparation method of silicon fiml |
| CN102519657B (en) * | 2011-11-22 | 2013-12-11 | 上海交通大学 | Two-dimensional vector flexible thermo-sensitive micro-shearing stress sensor, and array and preparation method thereof |
| CN105140155B (en) * | 2015-07-15 | 2018-06-05 | 桂林电子科技大学 | A kind of method for adhering piece for GaAs MMIC reduction process |
| CN108117041A (en) * | 2017-12-22 | 2018-06-05 | 中国科学院半导体研究所 | The preparation method of movable micro-nano structure based on dense boron-doping silicon |
| CN110828626B (en) * | 2018-08-09 | 2021-02-26 | 上海新微技术研发中心有限公司 | Semiconductor structure and forming method thereof |
| CN110868681B (en) * | 2019-11-29 | 2021-09-14 | 绍兴中芯集成电路制造股份有限公司 | MEMS microphone warpage compensation method and MEMS microphone wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596624B1 (en) * | 1999-07-31 | 2003-07-22 | International Business Machines Corporation | Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier |
| US20050017313A1 (en) * | 2002-08-07 | 2005-01-27 | Chang-Feng Wan | System and method of fabricating micro cavities |
| CN1587993A (en) * | 2004-07-15 | 2005-03-02 | 上海交通大学 | Bragg raster hydrogen sensor and its preparing process |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6596624B1 (en) * | 1999-07-31 | 2003-07-22 | International Business Machines Corporation | Process for making low dielectric constant hollow chip structures by removing sacrificial dielectric material after the chip is joined to a chip carrier |
| US20050017313A1 (en) * | 2002-08-07 | 2005-01-27 | Chang-Feng Wan | System and method of fabricating micro cavities |
| CN1587993A (en) * | 2004-07-15 | 2005-03-02 | 上海交通大学 | Bragg raster hydrogen sensor and its preparing process |
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