CN100397468C - Shift register circuit - Google Patents
Shift register circuit Download PDFInfo
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- CN100397468C CN100397468C CNB2005100976772A CN200510097677A CN100397468C CN 100397468 C CN100397468 C CN 100397468C CN B2005100976772 A CNB2005100976772 A CN B2005100976772A CN 200510097677 A CN200510097677 A CN 200510097677A CN 100397468 C CN100397468 C CN 100397468C
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- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000001235 sensitizing effect Effects 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
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- Liquid Crystal Display Device Control (AREA)
- Shift Register Type Memory (AREA)
Abstract
The present invention relates to a shift register circuit which is provided with a plurality of series-connected stage shift registers. The present invention comprises a first transistor, a second transistor and a pull-down module, wherein a grid electrode of the first transistor and a first source or a drain electrode are connected with an output signal of a front stage shift register; a grid electrode of the second transistor is connected with a second source or the drain electrode of the first transistor; a first source or a drain electrode of the second transistor is connected with a first clock signal, and a second source or the drain electrode is connected with an output end; when the second transistor is switched on, and the first clock signal is in high voltage level, the output end has first voltage level; the pull-down module is connected with the output end, the output signal of the front stage shift register, an output signal of a second stage shift register, second voltage level and third voltage level. When the output signal of the front stage shift register is in the first voltage level, the output signal of the front stage shift register is connected with the output end and the third voltage level.
Description
Technical field
The driving circuit of the shift register in the driving circuit of the driving circuit of the relevant LCD of the present invention, particularly LCD.
Background technology
In active formula liquid crystal drive technology, be with amorphous silicon film transistor as in active formula liquid crystal drive technology, be with the switch module of amorphous silicon film transistor as each pixel.For a pixel, when gate line voltage was high-voltage level, the amorphous silicon film transistor conducting was pulled to source potential identical with drain potential, obtains the voltage on the data line.When gate line voltage was reduced to low voltage level, amorphous silicon film transistor then turn-offed, and made its source potential maintain due level.Yet, owing to exist stray capacitance C between transistor source and grid
Gs, when grid voltage was low voltage level by high voltage drop, then source potential can be affected and produce certain pressure drop, and this pressure drop is called introduces pressure drop (feedthrough voltage) Δ V
Gd, can cause liquid crystal panel can't produce correct gray scale and show, be a key factor that influences the panel display characteristic.
Please refer to Fig. 1, Fig. 1 is the voltage level synoptic diagram of drain electrode, grid and the source electrode of known shift register.In time t1, drain voltage is high-voltage level V
DD, when grid potential was high-voltage level, source voltage can be pulled to high-voltage level V earlier
DD, then because stray capacitance C
GsInfluence and current potential decline Δ V
GdWhen time t2, drain voltage is low voltage level V
SS, when grid potential was high-voltage level, source voltage can be pulled to low voltage level V earlier
SS, then because stray capacitance C
GdInfluence and current potential descends again Δ V
GdKnown as shown in Figure 1 register circuit can cause liquid crystal panel can't produce correct gray scale and show because the influence of stray capacitance makes thin film transistor (TFT) can't express predetermined voltage.
Summary of the invention
Purpose of the present invention is for providing a kind of shift register circuit of introducing pressure drop that reduces or eliminates.
Another object of the present invention is for a kind of shift register circuit with three rank driving voltages is provided, to reduce or eliminate the introducing pressure drop.
The invention provides a kind of shift register circuit, have the shift registers of a plurality of serial connection levels, comprise a first transistor, a transistor seconds and drawing-die piece once.The grid of the first transistor is connected the output signal of a prime shift register with its first source/drain electrode.The grid of transistor seconds connects second source/drain electrode of the first transistor, and first source of transistor seconds/drain electrode connects one first clock signal, and second source of transistor seconds/drain electrode connects an output terminal.When transistor seconds conducting and this first clock signal were a high-voltage level, output terminal had one first voltage level.Drop-down module connects output signal, one second voltage level and a tertiary voltage level of this output terminal, a level shift register.When the output signal of this secondary shift register be this second or during the tertiary voltage level, connect this output terminal and this second voltage level; When the output signal of this secondary shift register is this first voltage level, connect this output terminal and this tertiary voltage level.
The present invention more provides a kind of shift register circuit, is formed on the glass substrate, has three rank driving voltages, comprises the shift register of a plurality of serial connection levels, and wherein each shift register comprises a plurality of transistors.The first transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein the grid of this first transistor is connected the output signal of a prime shift register with first source/drain electrode of this first transistor.Transistor seconds, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the grid of this transistor seconds connects second source/drain electrode of this first transistor, first source of this transistor seconds/drain electrode connects one first clock signal, second source of this transistor seconds/drain electrode connects an output terminal, when this transistor seconds conducting and this first clock signal were a high-voltage level, this output terminal had one first voltage level.The 3rd transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein the 3rd transistorized grid connects this output terminal, and the 3rd transistorized second source/drain electrode connects this second voltage level.The 4th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 4th transistorized grid connects the output signal of this secondary shift register, the 4th transistorized first source/drain electrode connects the first source/drain electrode of the 3rd transistor, and the 4th transistorized second source/drain electrode connects this second voltage level.The 5th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 5th transistorized first source/drain electrode connects this output terminal, the 5th transistorized second source/drain electrode connects this tertiary voltage level, and the 5th transistorized grid connects the 4th transistorized grid.One the 6th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 6th transistorized grid connects the 4th transistorized grid, the 6th transistorized second source/drain electrode connects this second voltage level, and the 6th transistorized first source/drain electrode connects the grid of this transistor seconds.The 7th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 7th transistorized first source/drain electrode connects this output terminal, the 7th transistorized second source/drain electrode connects this second voltage level, and the 7th transistorized grid connects the 4th transistorized first source/drain electrode.The 8th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 8th transistorized second source/drain electrode connects this second voltage level, the 8th transistorized grid connects the 7th transistorized grid, and the 8th transistorized first source/drain electrode connects the grid of this transistor seconds.The 9th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 9th transistorized grid is connected this second clock signal with the 9th transistorized first source/drain electrode, and the 9th transistorized second source/drain electrode connects the 8th transistorized grid.The tenth transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the tenth transistorized second source/drain electrode connects this second voltage level, the tenth transistorized grid connects this first clock signal, and the tenth transistorized first source/drain electrode connects the 8th transistorized grid.The 11 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 11 transistorized second source/drain electrode connects this second voltage level, the 11 transistorized grid connects the output signal of this prime shift register, and the 11 transistorized first source/drain electrode connects the 8th transistorized grid and the 3rd transistorized first source/drain electrode.The tenth two-transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein second of the tenth two-transistor source/drain electrode connects this second voltage level, and the grid of the tenth two-transistor connects this output terminal.The 13 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 13 transistorized first source/drain electrode connects this output terminal, the 13 transistorized second source/drain electrode connects this second voltage level, and the 13 transistorized grid connects first source/drain electrode of the tenth two-transistor.The 14 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 14 transistorized second source/drain electrode connects this second voltage level, the 14 transistorized grid connects the 13 transistorized grid, and the 14 transistorized first source/drain electrode connects the grid of this transistor seconds.The 15 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 15 transistorized grid is connected this first clock signal with the 15 transistorized first source/drain electrode, and the 15 transistorized second source/drain electrode connects the 13 transistorized grid.The 16 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 16 transistorized second source/drain electrode connects this second voltage level, the 16 transistorized grid connects this second clock signal, and the 16 transistorized first source/drain electrode connects the 13 transistorized grid.
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail as follows:
Description of drawings
Fig. 1 is the voltage level synoptic diagram of drain electrode, grid and the source electrode of known shift register.
Fig. 2 is a pixel synoptic diagram in the display panel.
Fig. 3 is the grid voltage synoptic diagram that one or three rank drive.
Fig. 4 is the synoptic diagram according to a shift register of the first embodiment of the present invention.
Fig. 5 is the synoptic diagram of a shift register according to a second embodiment of the present invention.
Fig. 6 A is the synoptic diagram of first embodiment of the drop-down module 50 of second voltage level among Fig. 5.
Fig. 6 B is the synoptic diagram of second embodiment of the drop-down module 50 of second voltage level among Fig. 5.
Fig. 7 is the circuit diagram of an embodiment of the first drop-down module 61 among Fig. 6 A.
Fig. 8 is the circuit diagram of an embodiment of the second drop-down module 62 among Fig. 6 A.
Fig. 9 is the circuit diagram of an embodiment of the drop-down module 51 of tertiary voltage level among Fig. 5.
Figure 10 is the shift-register circuit figure according to one embodiment of the invention.
Figure 11 is the sequential chart of the shift-register circuit of Figure 10.
Symbol description
The 21-thin film transistor (TFT)
The 22-pixel
The 23-grid
The 24-gate line
The 25-data line
T41, T42, T51, T52, T71, T72, T73, T74, T81, T82, T83, T84, T85, T91, T92, T93, T1-T16-transistor
The drop-down module of 40-
The drop-down module of 50-second voltage level
The drop-down module of 51-tertiary voltage level
The 61-first drop-down module
The 62-second drop-down module
63-first switchgear
64-second switch device
Embodiment
Fig. 2 is a pixel synoptic diagram in the display panel.Thin film transistor (TFT) 21 connects gate line 24, data line 25 and pixel 22.Produce coupling capacitance C respectively between pixel 22 and gate line 24 and 23
GsWith C
St
Fig. 3 is the grid voltage synoptic diagram that one or three rank drive.When the voltage of N bar gate line by high-voltage level V
2When dropping to low voltage level, because of C
GsCapacity coupled relation makes the current potential of pixel 22 thereby generation introduce pressure drop; And this moment (N-1) bar gate line voltage by low voltage level V
3Rise to V
1, because of C
StCapacity coupled relation, pixel 22 voltages thereby slightly rising is arranged.Therefore pixel as the pixel among Fig. 1 22, can reduce because of the formed introducing pressure drop of capacitive coupling size, and then reduce the problem that it causes.
Fig. 4 is the synoptic diagram according to a shift register of the first embodiment of the present invention.The grid of transistor T 41 is connected the output signal (N-1) of a prime shift register and drawing-die piece once with first source/drain electrode.The grid of transistor T 42 connects second source/drain electrode of transistor T 41, and first source-drain electrode of transistor T 42 connects a clock signal clk, and second source-drain electrode connects the output signal N of drop-down module 40 and shift register.Drop-down module 40 also connects output signal (N+1), the second voltage level V of a level shift register
SSAnd tertiary voltage level V
SS'.When transistor T 42 conductings and clock signal clk were high-voltage level, the output signal N of shift register had one first voltage level.When the output signal (N+1) of secondary shift register is second or during the tertiary voltage level, connect output signal N to the second voltage level V of this shift register
SSWhen the output signal (N+1) of this secondary shift register was first voltage level, the output signal N that connects shift register was to tertiary voltage level V
SS'.Utilize above-mentioned type of drive, drive with three rank that reach shift register of the present invention.
In an embodiment of the present invention, the circuit that may form by multiplexer, transistor or logic gate of this drop-down module 40.
Fig. 5 is the synoptic diagram of a shift register according to a second embodiment of the present invention.The grid of transistor T 51 is connected the output signal (N-1) and the drop-down module 50 of one second voltage level of a prime shift register with first source/drain electrode.The grid of transistor T 52 connects second source-drain electrode of transistor T 51, and first source-drain electrode of transistor T 52 connects a clock signal clk, and second source-drain electrode connects the output signal N of shift register.The drop-down module 50 of second voltage level connects the output signal (N+1) and one second voltage level V of the output signal N of shift register, secondary shift register
SSThe drop-down module 51 of tertiary voltage level connects the output signal (N+1) and a tertiary voltage level V of the output signal N of shift register, secondary shift register
SS'.When transistor T 52 conductings and clock signal clk were high-voltage level, the output signal N of shift register had one first voltage level.When the output signal (N-1) of prime shift register is second or during the tertiary voltage level, the drop-down module 50 of second voltage level connects output signal N to the second voltage level V of these shift registers
SSWhen the output signal (N+1) of this secondary shift register was first voltage level, the drop-down module 51 of tertiary voltage level connected the output signal N of shift register to tertiary voltage level V
SS'.Utilize above-mentioned type of drive, drive with three rank that reach shift register of the present invention.
In an embodiment of the present invention, the circuit that may form by multiplexer, transistor or logic gate of the drop-down module of second voltage level 50 and the drop-down module 51 of tertiary voltage level.
Fig. 6 A is the synoptic diagram of first embodiment of the drop-down module 50 of second voltage level among Fig. 5.In Fig. 6 A, the drop-down module 50 of second voltage level comprises one first drop-down module 61 and one second drop-down module 62.The first drop-down module 61 connects the output signal N and the second voltage level V of clock signal clk, shift register
SSThe second drop-down module 62 connects output signal N, prime shift register output signal (N-1) and the second voltage level V of clock signal XCLK, shift register
SSWhen this first clock signal was this high-voltage level, the output signal N that connects shift register was to this second voltage level V
SSWhen the output signal (N-1) of this prime shift register is this second voltage level V
SSAnd when this second clock signal was this high-voltage level, the output signal N that connects shift register was to this second voltage level V
SS
Fig. 6 B is the synoptic diagram of second embodiment of the drop-down module 50 of second voltage level among Fig. 5.In Fig. 6 B, the drop-down module 50 of second voltage level comprises one first drop-down module 61, one second drop-down module 62, one first switchgear 63 and a second switch device 64.The first drop-down module 61 connects the output signal N and the second voltage level V of clock signal clk, second switch device 64, shift register
SSThe second drop-down module 62 connects output signal N, prime shift register output signal (N-1) and the second voltage level V of clock signal XCLK, first switchgear 63, shift register
SSWhen the output signal N of shift register was high-voltage level, first switchgear 63 turn-offed the second drop-down module 62 and the first drop-down module 61 with second switch device 64.When this first clock signal was this high-voltage level, the output signal N that connects shift register was to this second voltage level V
SSWhen the output signal (N-1) of this prime shift register is this second voltage level V
SSAnd when this second clock signal was this high-voltage level, the output signal N that connects shift register was to this second voltage level V
SS
In an embodiment of the present invention, the circuit that may form by multiplexer, transistor or logic gate of the first drop-down module 61 and the second drop-down module 62.
For more clearly demonstrating the first drop-down module 61 and the second drop-down module 62, instructions of the present invention is described as follows with a circuit diagram.
Fig. 7 is the circuit diagram of an embodiment of the first drop-down module 61 among Fig. 6 A.First source of transistor T 71/drain electrode connects the output signal N of shift register, and its second source/drain electrode connects the second voltage level V
SSSecond source of transistor T 72/drain electrode connects the second voltage level V
SS, the grid of transistor T 72 connects the grid of transistor T 71.The grid of transistor T 73 is connected first clock signal clk with its first source/drain electrode, and second source of transistor T 73/drain electrode connects the grid of transistor T 71.Second source of transistor T 74/drain electrode connects the second voltage level V
SS, the grid of transistor T 74 connects second clock signal XCLK, and first source of transistor T 74/drain electrode connects the grid of this transistor T 71.When first clock signal clk was high-voltage level, second clock signal XCLK was a low voltage level, and transistor T 73 conductings and transistor T 74 turn-off.Transistor T 71 also is switched on T72, makes the output signal N of shift register be connected to the second voltage level V
SS
Fig. 8 is the circuit diagram of an embodiment of the second drop-down module 62 among Fig. 6 A.First source of transistor T 81/drain electrode connects the output signal N of shift register, and its second source/drain electrode connects the second voltage level V
SSSecond source of transistor T 82/drain electrode connects the second voltage level V
SS, the grid of transistor T 82 connects the grid of transistor T 81.Its first source/drain electrode of the grid and this of transistor T 83 is connected second clock signal XCLK, and second source of transistor T 83/drain electrode connects the grid of transistor T 82.Second source of transistor T 84/drain electrode connects the second voltage level V
SS, the grid of transistor T 84 connects first clock signal clk, and first source of transistor T 84/drain electrode connects the grid of transistor T 82.Second source of transistor T 85/drain electrode connects the second voltage level V
SS, the grid of transistor T 85 connects the output signal (N-1) of prime shift register, and first source of transistor T 85/drain electrode connects the grid of transistor T 82.When the output signal (N-1) of prime shift register is that low voltage level and second clock signal XCLK are during for this high-voltage level, transistor T 85 turn-offs and transistor T 81 and T82 conducting, makes the output signal N of shift register be connected to this second voltage level V
SS
Fig. 9 is the circuit diagram of an embodiment of the drop-down module 51 of tertiary voltage level among Fig. 5.The grid of transistor T 91 connects the output signal (N+1) of secondary shift register, and second source of transistor T 91/drain electrode connects the second voltage level V
SSFirst source of transistor T 92/drain electrode connects the output signal N of shift register, and second source of transistor T 92/drain electrode connects tertiary voltage level V
SS', the grid of transistor T 92 connects the grid of transistor T 91.The grid of transistor T 93 connects the grid of transistor T 91, and second source of transistor T 93/drain electrode connects the second voltage level V
SSWhen the output signal (N+1) of secondary shift register was high-voltage level, transistor T 91, T92 and T93 were switched on, and therefore the output signal N of shift register is connected to tertiary voltage level V
SS'.
Figure 10 is the shift-register circuit figure according to one embodiment of the invention.The grid of transistor T 1 is connected the output signal (N-1) of a prime shift register with its first source/drain electrode.Transistor T 2 grids connect second source/drain electrode of this transistor T 1, and first source of transistor T 2/drain electrode connects one first clock signal clk, and second source of transistor T 2/drain electrode connects the output signal N of a shift register.The grid of transistor T 3 connects the output signal N of shift register, and second source of transistor T 3/drain electrode connects the second voltage level V
SSThe grid of transistor T 4 connects the output signal (N+1) of secondary shift register, and first source of transistor T 4/drain electrode connects transistor T 3 first source/drain electrodes, and second source of transistor T 4/drain electrode connects the second voltage level V
SSFirst source of transistor T 5/drain electrode connects the output signal tool N of shift register, and second source of transistor T 5/drain electrode connects tertiary voltage level V
SS', the grid of transistor T 5 connects the grid of this transistor T 4.The grid of transistor T 6 connects the grid of transistor T 4, and second source of transistor T 6/drain electrode connects the second voltage level V
SS, first source of transistor T 6/drain electrode connects the grid of transistor T 2.First source of transistor T 7/drain electrode connects the output signal N of this shift register, and second source of transistor T 7/drain electrode connects the second voltage level V
SS, the grid of transistor T 7 connects second source/drain electrode of transistor T 4.Second source of transistor T 8/drain electrode connects this second voltage level V
SS, the grid of transistor T 8 connects the grid of transistor T 7, and first source of transistor T 8/drain electrode connects the grid of transistor T 2.The grid of transistor T 9 is connected second clock signal XCLK with its first source/drain electrode, and second source of transistor T 9/drain electrode connects the grid of transistor T 8.Second source of transistor T 10/drain electrode connects the second voltage level V
SS, the grid of transistor T 10 connects first clock signal clk, and first source of transistor T 10/drain electrode connects the grid of transistor T 8.Second source of transistor T 11/drain electrode connects the second voltage level V
SS, the grid of transistor T 11 connects the output signal (N-1) of prime shift register, and first source of transistor T 11/drain electrode connects the grid of transistor T 8 and first source/drain electrode of transistor T 3.Second source of transistor T 12/drain electrode connects the second voltage level V
SS, the grid of transistor T 12 connects the output signal N of shift register.First source of transistor T 13/drain electrode connects the output signal N of shift register, and second source of transistor T 13/drain electrode connects the second voltage level V
SS, the grid of transistor T 13 connects first source/drain electrode of transistor T 12.Second source of transistor T 14/drain electrode connects the second voltage level V
SS, the grid of transistor T 14 connects the grid of transistor T 13, and first source of transistor T 14/drain electrode connects the grid of transistor T 2.The grid of transistor T 15 is connected first clock signal clk with its first source/drain electrode, and second source of transistor T 15/drain electrode connects the grid of transistor T 13.Second source of transistor T 16/drain electrode connects the second voltage level V
SS, the grid of transistor T 16 connects second clock signal XCLK, and first source of transistor T 16/drain electrode connects the grid of transistor T 13.
Figure 11 is the sequential chart of the shift-register circuit of Figure 10.During time t1, the output signal of prime shift register (N-1) is the first voltage level V1 again, makes transistor T 1, T2 and T11 conducting, and the current potential of end points N1 is a high-voltage level.This moment, first clock signal clk was a low voltage level, so the output signal N of shift register still is the second voltage level V
SS
When time t2, the output signal of prime shift register (N-1) is pulled down to tertiary voltage level V
SS', first clock signal clk is a high-voltage level, makes transistor T 2 because of the coupling capacitance between grid and source/drain electrode, causes the current potential of end points N1 to become higher.The current potential of the output signal N of shift register is positioned at the first voltage level V because of the high-voltage level of the conducting of transistor T 2 and first clock signal
1
When time t3, the output signal of secondary shift register (N+1) is the first voltage level V
1, make transistor T 4, T5 and T6 conducting.Make the current potential of end points N1 be pulled down to the second voltage level V by transistor T 6
SS, the output signal N of shift register is pulled down to tertiary voltage level V by transistor T 5
SS'.
When time t4, the output signal of secondary shift register (N+1) is pulled down to tertiary voltage level V
SS', get transistor T 4, T5 and T6 and turn-off.This moment, first clock signal clk was a high-voltage level, and transistor T 15 is switched on, and end points N2 is a high-voltage level, turn-on transistor T13, and the output signal of shift register is from tertiary voltage level V
SS' on move the second voltage level V to
SS
Outside time t1-t4, when first clock signal clk is high-voltage level, be responsible for the output signal N of shift register is maintained the second voltage level V by transistor T 13
SSWhen second clock signal XCLK is that the output signal (N-1) of high-voltage level and prime shift register is second or during the tertiary voltage level, be responsible for the output signal N of shift register are maintained the second voltage level V by transistor T 7
SS
Though the present invention with preferred embodiment openly as above; right its is not that any those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention in order to qualification the present invention; can change and modification, so protection scope of the present invention is as the criterion with the claim institute restricted portion that is proposed.
Claims (19)
1. a shift register circuit has a plurality of shift registers that are connected in series level, and wherein each shift register comprises:
One the first transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the grid of this first transistor is connected the output signal of a prime shift register with first source/drain electrode of this first transistor, if current shift register is a first order shift register, then the grid of its first transistor is connected a sensitizing pulse signal with first source/drain electrode;
One transistor seconds, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the grid of this transistor seconds connects second source/drain electrode of this first transistor, first source of this transistor seconds/drain electrode connects one first clock signal, second source of this transistor seconds/drain electrode connects an output terminal, when this transistor seconds conducting and this first clock signal were a high-voltage level, this output terminal had one first voltage level; And
Drawing-die piece once, the output signal, one second voltage level and the tertiary voltage level that connect the output signal of this output terminal, this prime shift register, a level shift register, when the output signal of this prime shift register be this second or during the tertiary voltage level, connect this output terminal and this second voltage level; When the output signal of this secondary shift register is this first voltage level, connect this output terminal and this tertiary voltage level.
2. shift register circuit as claimed in claim 1, wherein this drop-down module comprises drop-down module of one second voltage level and the drop-down module of a tertiary voltage level.
3. shift register circuit as claimed in claim 2, wherein the drop-down module of this second voltage level also comprises:
One first drop-down module connects this output terminal and this first clock signal, when this first clock signal is this high-voltage level, connects this output terminal to this second voltage level; And
One second drop-down module connects this output terminal and a second clock signal, when the output signal of this prime shift register is this second voltage level and this second clock signal during for this high-voltage level, connects this output terminal to this second voltage level.
4. shift register circuit as claimed in claim 3, wherein the drop-down module of this second voltage level also comprises one first switchgear, when this output terminal has this first voltage level, turn-offs this first drop-down module.
5. shift register circuit as claimed in claim 3, wherein the drop-down module of this second voltage level also comprises a second switch device, when this output terminal has this first voltage level, turn-offs this second drop-down module.
6. shift register circuit as claimed in claim 3, wherein this second clock signal and first clock signal have 180 degree phase differential.
7. shift register circuit as claimed in claim 1, wherein this first clock signal has 50% or be lower than for 50% work period.
8. shift register circuit as claimed in claim 1, wherein this tertiary voltage level is lower than this second voltage level.
9. shift register circuit as claimed in claim 2, wherein the drop-down module of this tertiary voltage level comprises:
One the 4th transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein the 4th transistorized grid connects the output signal of this secondary shift register, and the 4th transistorized second source/drain electrode connects this second voltage level;
One the 5th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 5th transistorized first source/drain electrode connects this output terminal, the 5th transistorized second source/drain electrode connects this tertiary voltage level, and the 5th transistorized grid connects the 4th transistorized grid; And
One the 6th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 6th transistorized grid connects the 4th transistorized grid, the 6th transistorized second source/drain electrode connects this second voltage level, and the 6th transistorized first source/drain electrode connects the grid of this transistor seconds.
10. shift register circuit as claimed in claim 3, wherein this second drop-down module comprises:
One the 7th transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein the 7th transistorized first source/drain electrode connects this output terminal, and the 7th transistorized second source/drain electrode connects this second voltage level;
One the 8th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 8th transistorized second source/drain electrode connects this second voltage level, the 8th transistorized grid connects the 7th transistorized grid, and the 8th transistorized first source/drain electrode connects the grid of this transistor seconds;
One the 9th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 9th transistorized grid is connected this second clock signal with the 9th transistorized first source/drain electrode, and the 9th transistorized second source/drain electrode connects the 8th transistorized grid;
The tenth transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the tenth transistorized second source/drain electrode connects this second voltage level, the tenth transistorized grid connects this first clock signal, and the tenth transistorized first source/drain electrode connects the 8th transistorized grid; And
The 11 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 11 transistorized second source/drain electrode connects this second voltage level, the 11 transistorized grid connects the output signal of this prime shift register, the 11 transistorized first source/drain electrode connects the 8th transistorized grid, if current shift register is a first order shift register, then its 11 transistorized grid connects a sensitizing pulse signal.
11. shift register circuit as claimed in claim 3, wherein this first drop-down module comprises:
The 13 transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein the 13 transistorized first source/drain electrode connects this output terminal, and the 13 transistorized second source/drain electrode connects this second voltage level;
The 14 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 14 transistorized second source/drain electrode connects this second voltage level, the 14 transistorized grid connects the 13 transistorized grid, and the 14 transistorized first source/drain electrode connects the grid of this transistor seconds;
The 15 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 15 transistorized grid is connected this first clock signal with the 15 transistorized first source/drain electrode, and the 15 transistorized second source/drain electrode connects the 13 transistorized grid; And
The 16 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 16 transistorized second source/drain electrode connects this second voltage level, the 16 transistorized grid connects this second clock signal, and the 16 transistorized first source/drain electrode connects the 13 transistorized grid.
12. shift register circuit as claimed in claim 4, wherein this switchgear is one the 3rd transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 3rd transistorized grid connects this output terminal, the 3rd transistorized first source/drain electrode connects this second drop-down module, and the 3rd transistorized second source/drain electrode connects this second voltage level.
13. shift register circuit as claimed in claim 5, wherein this switchgear is 1 the tenth two-transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the grid of the tenth two-transistor connects this output terminal, first source of the tenth two-transistor/drain electrode connects this first drop-down module, and second source of the tenth two-transistor/drain electrode connects this second voltage level.
14. a shift register circuit is formed on the glass substrate, has three rank driving voltages, comprises the shift register of a plurality of serial connection levels, wherein each shift register comprises:
One the first transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the grid of this first transistor is connected the output signal of a prime shift register with first source/drain electrode of this first transistor, if current shift register is a first order shift register, then the grid of its first transistor is connected a sensitizing pulse signal with first source/drain electrode;
One transistor seconds, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the grid of this transistor seconds connects second source/drain electrode of this first transistor, first source of this transistor seconds/drain electrode connects one first clock signal, second source of this transistor seconds/drain electrode connects an output terminal, when this transistor seconds conducting and this first clock signal were a high-voltage level, this output terminal had one first voltage level;
One the 3rd transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein the 3rd transistorized grid connects this output terminal, and the 3rd transistorized second source/drain electrode connects one second voltage level;
One the 4th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 4th transistorized grid connects the output signal of a level shift register, the 4th transistorized first source/drain electrode connects the first source/drain electrode of the 3rd transistor, and the 4th transistorized second source/drain electrode connects this second voltage level;
One the 5th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 5th transistorized first source/drain electrode connects this output terminal, the 5th transistorized second source/drain electrode connects a tertiary voltage level, and the 5th transistorized grid connects the 4th transistorized grid;
One the 6th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 6th transistorized grid connects the 4th transistorized grid, the 6th transistorized second source/drain electrode connects this second voltage level, and the 6th transistorized first source/drain electrode connects the grid of this transistor seconds;
One the 7th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 7th transistorized first source/drain electrode connects this output terminal, the 7th transistorized second source/drain electrode connects this second voltage level, and the 7th transistorized grid connects the 4th transistorized second source/drain electrode;
One the 8th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 8th transistorized second source/drain electrode connects this second voltage level, the 8th transistorized grid connects the 7th transistorized grid, and the 8th transistorized first source/drain electrode connects the grid of this transistor seconds;
One the 9th transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 9th transistorized grid is connected a second clock signal with the 9th transistorized first source/drain electrode, and the 9th transistorized second source/drain electrode connects the 8th transistorized grid;
The tenth transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the tenth transistorized second source/drain electrode connects this second voltage level, the tenth transistorized grid connects this first clock signal, and the tenth transistorized first source/drain electrode connects the 8th transistorized grid;
The 11 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 11 transistorized second source/drain electrode connects this second voltage level, the 11 transistorized grid connects the output signal of this prime shift register, the 11 transistorized first source/drain electrode connects the 8th transistorized grid and the 3rd transistorized first source/drain electrode, if current shift register is a first order shift register, then its 11 transistorized grid connects a sensitizing pulse signal;
The tenth two-transistor has a grid, one first source/drain electrode and one second source/drain electrode, and wherein second of the tenth two-transistor source/drain electrode connects this second voltage level, and the grid of the tenth two-transistor connects this output terminal;
The 13 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 13 transistorized first source/drain electrode connects this output terminal, the 13 transistorized second source/drain electrode connects this second voltage level, and the 13 transistorized grid connects first source/drain electrode of the tenth two-transistor;
The 14 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 14 transistorized second source/drain electrode connects this second voltage level, the 14 transistorized grid connects the 13 transistorized grid, and the 14 transistorized first source/drain electrode connects the grid of this transistor seconds;
The 15 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 15 transistorized grid is connected this first clock signal with the 15 transistorized first source/drain electrode, and the 15 transistorized second source/drain electrode connects the 13 transistorized grid; And
The 16 transistor, have a grid, one first source/drain electrode and one second source/drain electrode, wherein the 16 transistorized second source/drain electrode connects this second voltage level, the 16 transistorized grid connects this second clock signal, and the 16 transistorized first source/drain electrode connects the 13 transistorized grid.
15. shift register circuit as claimed in claim 14, wherein these a plurality of transistors are nmos pass transistor, are formed on the glass substrate.
16. shift register circuit as claimed in claim 14, wherein these a plurality of transistors are amorphous silicon film transistor, are formed on the glass substrate.
17. shift register circuit as claimed in claim 15, wherein this second clock signal and first clock signal have 180 degree phase differential.
18. shift register circuit as claimed in claim 14, wherein this first clock signal has 50% or be lower than for 50% work period.
19. shift register circuit as claimed in claim 14, wherein this tertiary voltage level is lower than this second voltage level.
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| CN100395814C (en) * | 2006-03-13 | 2008-06-18 | 友达光电股份有限公司 | Self-feedback offset buffer |
| TWI349245B (en) | 2006-03-22 | 2011-09-21 | Au Optronics Corp | Liquid crystal display and shift register unit thereof |
| CN100399410C (en) * | 2006-04-05 | 2008-07-02 | 友达光电股份有限公司 | Shift register circuit |
| CN100461254C (en) * | 2006-04-27 | 2009-02-11 | 友达光电股份有限公司 | Liquid crystal display and shift buffer memory unit |
| CN100463042C (en) * | 2006-09-27 | 2009-02-18 | 友达光电股份有限公司 | Control circuit capable of removing residual charge |
| TWI834568B (en) * | 2006-09-29 | 2024-03-01 | 日商半導體能源研究所股份有限公司 | Semiconductor device |
| CN101546607B (en) * | 2008-03-26 | 2012-02-29 | 北京京东方光电科技有限公司 | Shift register and grid driving device for liquid crystal display |
| CN102693692B (en) * | 2011-03-25 | 2014-11-26 | 京东方科技集团股份有限公司 | Shift register unit and LCD (liquid crystal display) grid driving device |
| CN102650751B (en) * | 2011-09-22 | 2014-08-06 | 京东方科技集团股份有限公司 | GOA (Gate Driver on Array) circuit, array base plate and liquid crystal display device |
| CN104077992B (en) * | 2013-03-29 | 2016-12-28 | 北京京东方光电科技有限公司 | A kind of shift register cell, shift register, display floater and display |
| US9256088B2 (en) | 2013-12-31 | 2016-02-09 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Three-level-driven array substrate row driving circuit |
| CN103745706B (en) * | 2013-12-31 | 2016-01-06 | 深圳市华星光电技术有限公司 | The array base palte horizontal drive circuit that three rank drive |
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Effective date of registration: 20240130 Address after: 825 Watercreek Avenue, Allen, Texas, USA, Unit 250 Patentee after: Optoelectronic Science Co.,Ltd. Country or region after: U.S.A. Address before: Hsinchu City, Taiwan, China Patentee before: AU OPTRONICS Corp. Country or region before: China |