CN100394542C - Gas temperature controllable plasma etching device - Google Patents
Gas temperature controllable plasma etching device Download PDFInfo
- Publication number
- CN100394542C CN100394542C CNB2005101262727A CN200510126272A CN100394542C CN 100394542 C CN100394542 C CN 100394542C CN B2005101262727 A CNB2005101262727 A CN B2005101262727A CN 200510126272 A CN200510126272 A CN 200510126272A CN 100394542 C CN100394542 C CN 100394542C
- Authority
- CN
- China
- Prior art keywords
- plasma etching
- air inlet
- inlet pipe
- heating
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The present invention relates to a plasma etching apparatus comprising a reaction cavity and a quartz cover having an intake pipe, wherein the intake pipe is provided with a heating apparatus which is used for temperature controllable heating on gas in the intake pipe. The plasma etching apparatus of the present invention has the advantages and positive effects that due to the fact that the intake pipe of the quartz cover is provided with the heating apparatus, the heating apparatus can change the velocity of movement of gas molecules by controlling the temperature of the gas, which makes the gas to be more uniformly distributed in the reaction cavity, and thereby, the degree of uniformity of plasma etching is raised.
Description
Technical field
The present invention relates to plasma etching apparatus, particularly a kind of plasma etching apparatus of reacting gas Controllable Temperature.
Background technology
In the manufacturing of semiconductor device, the different material aspect on integrated circuit or the flat-panel monitor is generally all formed by chemistry and physical deposition or etching.In the broadest sense, lithographic technique comprises whole of material is evenly removed, or with figuratum part selective removal, can be divided into wet etching and dry etching with regard to its kind.Dry etching is exactly to utilize gas discharge to produce plasma to carry out the lithographic technique that film shifts out.Etching is generally all carried out in the reative cell in the plasma process system.Use dry etching and mainly should be noted that etch rate, etching homogeneity and etching profile or the like.Uniformity is an important indicator of the etch rate difference of different etching position, and uniformity will cause preferable productive rate preferably, and especially when the etching silicon area increased, it is more important that inhomogeneity control just seems.
As shown in Figure 1, the structure of existing plasma etching apparatus comprises cylindric reaction cavity 3 and the quartz cover of covering on reaction cavity 34, the middle position of quartz cover 4 is provided with air inlet pipe 5, and the sidewall 1 of reaction cavity 3, diapire 2 and quartz cover 4 have formed reaction chamber.Silicon chip 6 to be etched is placed on the middle position of diapire 2 in the reaction chamber.In this kind plasma etching apparatus, quartz cover 4 is circular tabular, and there is an air inlet pipe 5 in the central authorities of quartz cover 4 in the prior art.Characteristic according to fluid, when etching gas entered reaction chamber by the air inlet pipe 5 of quartz cover 4 central authorities, gas was tending towards directly impacting diapire 2 centre positions, is not easy to spread towards periphery, so just caused the gas density in centre position bigger, and more little the closer to sidewall 1 position gas density.Such plasma etching device, when the etching large-sized silicon wafers, the etching homogeneity of fringe region is very poor.
Summary of the invention
(1) technical problem that will solve
The objective of the invention is at above-mentioned the deficiencies in the prior art, thereby provide a kind of by at the air inlet pipe place being the inhomogeneity plasma etching apparatus of distribution of gas in the reacting gas heating raising reative cell.
(2) technical scheme
For achieving the above object, the present invention adopts following technical scheme:
Plasma etching apparatus of the present invention comprises reaction cavity and quartz cover, and quartz cover is provided with air inlet pipe, and wherein said air inlet pipe is used for the gas in the air inlet pipe is carried out the Controllable Temperature heating with heater.
Above-mentioned plasma etching apparatus, a kind of preferred scheme are that described heater is a heating wire.This heating wire is wrapped in the air inlet pipe outer wall, is the air inlet pipe heating.
Above-mentioned plasma etching apparatus, a kind of preferred scheme are that described heater is an electric jacket.This electric jacket is enclosed within outside the air inlet pipe of quartz cover, comprises electric jacket, controller, software section, and wherein, controller is used for controlling in real time electric jacket, and the feedback heating-up temperature; Electric jacket is controlled by the controller, and is the air inlet pipe heating; Software section is used to set heating-up temperature, and shows current temperature value in real time.
(3) beneficial effect
The advantage and the good effect of plasma etching apparatus of the present invention are: among the present invention, because the air inlet pipe of described quartz cover has heater, this heater can change the movement velocity of gas molecule by the control gaseous temperature, make gas being more evenly distributed in reaction chamber, and then improve the uniformity coefficient of plasma etching.
Description of drawings
Fig. 1 is the cutaway view of existing plasma etching apparatus;
Fig. 2 is the schematic diagram of plasma etching apparatus embodiment of the present invention;
Fig. 3 is the structural representation of electric calorifie installation used in the embodiments of the invention;
Fig. 4 is the effect contrast figure of the present invention and prior art.
Among the figure: 1. sidewall; 2. diapire; 3. reaction cavity; 4. quartz cover; 5. air inlet pipe; 6. silicon chip; 7, heater.
Embodiment
Below in conjunction with accompanying drawing, further describe the embodiment of plasma etching apparatus of the present invention, but be not used for limiting protection scope of the present invention.
Referring to Fig. 2.A kind of embodiment of plasma etching apparatus of the present invention, comprise cylindric reaction cavity 3 and the quartz cover of covering on reaction cavity 34, the middle position of quartz cover 4 is provided with air inlet pipe 5, air inlet pipe 5 outer walls have heater 7, the sidewall 1 of reaction cavity 3, diapire 2 and quartz cover 4 have formed reaction chamber, and silicon chip 6 to be etched is placed on the middle position of diapire 2 in the reaction chamber.
In the present embodiment, heater 7 is selected electric jacket equipment commonly used in the prior art for use.Specifically selected the electric jacket device A type of Britain LMK engineering company for use.This electric jacket equipment comprises 3 parts, is respectively electric jacket, controller and software section, as shown in Figure 3.Wherein, controller is used to control the temperature of electric jacket, and electric jacket feeds back Current Temperatures in real time in controller, and software section is used to set heating-up temperature, also shows the Current Temperatures of electric jacket in real time.The electric jacket device of selecting for use in the present embodiment, the girth of electric jacket are the 870-1020 millimeter, and 400 millimeters of length are supported 0 ℃-90 ℃ temperature range.Learn that by experiment in the etching process, the temperature maintenance of electric jacket can obtain the inhomogeneity effect of extraordinary gas about 60 ℃.
Use the quartz cover 4 that proposes among the present invention, because there is heating collar in the air inlet pipe of the gas outside, temperature was higher when therefore gas was in entering reaction chamber, gas molecule is more active, help gaseous diffusion, therefore improved isoionic even distributed degrees, make the silicon chip erosion uniformity significantly improve, improve nearly 1 times than in the past, saw Fig. 4.Wherein ordinate is the inhomogeneity raising percentage of silicon chip erosion, and abscissa is an experiment number, i.e. the number of the silicon chip of Guan Chaing.Wherein, article 2, curve is respectively " intake method originally ", promptly use the etching device that has only an air admission hole in the prior art, the method that " intake method 1 " expression adopts the present invention to propose, promptly adopt the design of the quartz cover that has increased heater in the present embodiment, the uniformity coefficient of the silicon chip of institute's etching.As can be seen, adopt the method for present embodiment to carry out etching, the uniformity of the silicon chip of etching is more stable.
Claims (4)
1. a plasma etching apparatus comprises reaction cavity (3) and quartz cover (4), and quartz cover (4) is provided with air inlet pipe (5), it is characterized in that described air inlet pipe (5) with heater (7), is used for the gas in the air inlet pipe is carried out the Controllable Temperature heating.
2. plasma etching apparatus according to claim 1 is characterized in that described heater is a heating wire.
3. plasma etching apparatus according to claim 2 is characterized in that described heating wire is wrapped in air inlet pipe (5) outer wall, is the air inlet pipe heating.
4. plasma etching apparatus according to claim 1 is characterized in that described heater is an electric jacket, and electric jacket is enclosed within outside the air inlet pipe (5) of quartz cover, also comprise controller and software section, wherein, controller is used for controlling in real time electric jacket, and the feedback heating-up temperature; Electric jacket is controlled by the controller, and is the air inlet pipe heating; Software section is used to set heating-up temperature, and shows current temperature value in real time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101262727A CN100394542C (en) | 2005-12-02 | 2005-12-02 | Gas temperature controllable plasma etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101262727A CN100394542C (en) | 2005-12-02 | 2005-12-02 | Gas temperature controllable plasma etching device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1848366A CN1848366A (en) | 2006-10-18 |
| CN100394542C true CN100394542C (en) | 2008-06-11 |
Family
ID=37077863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101262727A Active CN100394542C (en) | 2005-12-02 | 2005-12-02 | Gas temperature controllable plasma etching device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100394542C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104900471B (en) * | 2015-04-13 | 2017-04-19 | 上海华力微电子有限公司 | Plasma etching device and method for improving the efficiency of silicon-cobalt-nickel etching |
| CN110648892A (en) * | 2019-09-30 | 2020-01-03 | 无锡英普朗科技有限公司 | Transmission device for plasma gas |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06275563A (en) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | Microwave plasma etching device |
| US5458687A (en) * | 1992-11-20 | 1995-10-17 | Hitachi, Ltd. | Method of and apparatus for securing and cooling/heating a wafer |
| US20030194510A1 (en) * | 2002-04-16 | 2003-10-16 | Applied Materials, Inc. | Methods used in fabricating gates in integrated circuit device structures |
| JP2004014822A (en) * | 2002-06-07 | 2004-01-15 | Dainippon Screen Mfg Co Ltd | Substrate treatment equipment |
| CN1596462A (en) * | 2001-11-30 | 2005-03-16 | 东京毅力科创株式会社 | Processing apparatus and gas discharge suppressing member |
-
2005
- 2005-12-02 CN CNB2005101262727A patent/CN100394542C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5458687A (en) * | 1992-11-20 | 1995-10-17 | Hitachi, Ltd. | Method of and apparatus for securing and cooling/heating a wafer |
| JPH06275563A (en) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | Microwave plasma etching device |
| CN1596462A (en) * | 2001-11-30 | 2005-03-16 | 东京毅力科创株式会社 | Processing apparatus and gas discharge suppressing member |
| US20030194510A1 (en) * | 2002-04-16 | 2003-10-16 | Applied Materials, Inc. | Methods used in fabricating gates in integrated circuit device structures |
| JP2004014822A (en) * | 2002-06-07 | 2004-01-15 | Dainippon Screen Mfg Co Ltd | Substrate treatment equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1848366A (en) | 2006-10-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9587884B2 (en) | Insulation structure and method of manufacturing semiconductor device | |
| US7311520B2 (en) | Heat treatment apparatus | |
| JP5766647B2 (en) | Heat treatment system, heat treatment method, and program | |
| CN100449723C (en) | Processing system and method for treating a substrate | |
| JP5788355B2 (en) | Heat treatment system, heat treatment method, and program | |
| JP5049303B2 (en) | Heat treatment apparatus, temperature adjustment method for heat treatment apparatus, and program | |
| JP3338884B2 (en) | Semiconductor processing equipment | |
| US10096499B2 (en) | Substrate processing method, program, control apparatus, film forming apparatus, and substrate processing system | |
| TW202331895A (en) | Process chamber assembly, semiconductor process equipment and method thereof | |
| JP4546623B2 (en) | Method for determining control conditions for heat treatment equipment | |
| CN100394542C (en) | Gas temperature controllable plasma etching device | |
| JP6596316B2 (en) | Heat treatment system, heat treatment method, and program | |
| JP5049302B2 (en) | Heat treatment apparatus, temperature adjustment method for heat treatment apparatus, and program | |
| KR20190018759A (en) | Separation Grid for Plasma Chamber | |
| US20070221618A1 (en) | Etching method | |
| JP3036477B2 (en) | Semiconductor manufacturing equipment | |
| KR20120082369A (en) | Substrate processing apparatus | |
| KR102255315B1 (en) | Apparatus for processing substrate and method for processing substrate | |
| JPH0227715A (en) | Heating stage for vapor growth device | |
| KR100239405B1 (en) | Semiconductor fabricating system | |
| JPH06132231A (en) | Cvd equipment | |
| JP4218360B2 (en) | Heat treatment apparatus and heat treatment method | |
| JP6564689B2 (en) | Heat treatment system, heat treatment method, and program | |
| KR100501530B1 (en) | Rtp process chamber with a purge gas temperature controllar | |
| JP2002141290A (en) | System for producing semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |