CN100393917C - Chemical plating process and device - Google Patents
Chemical plating process and device Download PDFInfo
- Publication number
- CN100393917C CN100393917C CNB2003101234287A CN200310123428A CN100393917C CN 100393917 C CN100393917 C CN 100393917C CN B2003101234287 A CNB2003101234287 A CN B2003101234287A CN 200310123428 A CN200310123428 A CN 200310123428A CN 100393917 C CN100393917 C CN 100393917C
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- Prior art keywords
- wafer
- copper
- ring
- type point
- point contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007747 plating Methods 0.000 title claims abstract description 45
- 239000000126 substance Substances 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910052802 copper Inorganic materials 0.000 claims abstract description 89
- 239000010949 copper Substances 0.000 claims abstract description 89
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 34
- 238000009713 electroplating Methods 0.000 claims description 23
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 239000008151 electrolyte solution Substances 0.000 claims description 8
- 150000001879 copper Chemical class 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 51
- 238000005406 washing Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000011148 porous material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to a chemical plating method which is suitable for plating copper thin films on a wafer, and the present invention can avoid that the copper thin films are plated at the periphery of the wafer. A copper electrode is connected with a positive electrode of a power source; the wafer is connected with annular point-contact electrodes. The pressure of the contact surface between the annular point-contact electrodes and the periphery of the wafer can be less than a predetermined critical value during plating. The pressure of the contact surface between the annular point-contact electrodes and the non-periphery part of the wafer can be larger than the predetermined critical value.
Description
Technical field
The present invention is about a kind of chemical plating copper method, especially about a kind of chemical plating copper method that is applicable in the semiconductor technology.
Technical background
In unicircuit, the method for manufactured copper lead is to electroplate the layer of copper film on the deposited copper crystal seed layer with chemical plating (Electro-ChemicalPlating) equipment.After the plating, the situation that the generation always that makes a circle in the week of copper film on the wafer is peeled off is so that cause subsequent technique particle pollution or the low situation of qualification rate.Therefore behind chemical plating process, increase the copper film that one technology made a circle with the flush away wafer last week, with the contingency question of avoiding the copper film separation to be produced.
In known chemical plating equipment, equipment vendor has designed a side washing assembly (IBC, Integrated Bevel Clean) and has been used for the copper film that the flush away wafer made a circle last week.Known side washing technology makes a circle to spray after plating by the side washing assembly and is used for the solution of dissolved copper film in the week of wafer, with the copper film around removing.The solution that is commonly used to the dissolved copper film comprises sulfuric acid, hydrogen peroxide (H
2O
2) and the mixture of deionized water.
Yet the technology of wafer side washing is everlasting in the process of the solution that sprays the dissolved copper film, can't avoid the other parts (non-week make a circle) of spray solution at wafer, thereby cause the copper conductor of normally functioning unicircuit also to suffer the erosion damage of solution.Therefore, unicircuit manufacturers needs a kind of method of innovation to solve the above problems to overcome.
Summary of the invention
Therefore purpose of the present invention just provides a kind of chemical plating copper method, in order to prevent that electroplating making a circle in week of back wafer generates the copper film.
Another object of the present invention provides a kind of chemical plating copper device, and making a circle in week of wafer generates the copper film in order to prevent to electroplate afterwards, and makes chemical plating copper device no longer need the side washing assembly.
According to above-mentioned purpose of the present invention, a kind of chemical plating method is proposed, be applicable to the copper thin film electroplating on a wafer, and can avoid the copper thin film electroplating around wafer.This chemical plating copper method connects the ring-type point contact electrode with the positive pole of copper electrode connection power supply with wafer.Carry out when electroplating, the pressure of contact surface needs less than a predetermined critical between peripheral part of this ring-type point contact electrode and this wafer.The pressure of the contact surface between non-peripheral part of this ring-type point contact electrode and this wafer needs greater than this predetermined critical.According to another object of the present invention, provide a kind of chemical plating copper device.This chemical plating copper device and power supply electrically connect, and it is applicable to the copper thin film electroplating on a wafer, be used for preventing wafer around be coated with the copper film.This chemical plating copper device comprises the ring-type point contact electrode, and this ring-type point contact electrode contacts the one side that this wafer has integrated circuit (IC).This chemical plating copper device also comprises a thrust pad contact wafer.Thrust pad applies different pressures respectively in the contact surface around the wafer, between non-peripheral part and ring-type point contact electrode, wherein the pressure of the contact surface between this peripheral part of this wafer and this ring-type point contact electrode is less than a predetermined critical, and the pressure of the contact surface between non-peripheral part of this wafer and this ring-type point contact electrode is greater than this predetermined critical.
From the above, use chemical plating copper method of the present invention, the ohmic contact pressure by between control electroplating cathode and wafer can prevent the deposition that the copper film made a circle in the week of wafer.In addition, use the thrust pad of chemical plating equipment of the present invention and the effect of the side washing assembly in the air cushioned seat known chemical electroplating device of desirable generation.
The accompanying drawing simple declaration
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Fig. 1 shows the synoptic diagram according to a kind of chemical plating principle of a preferred embodiment of the present invention;
Fig. 2 shows according to a kind of ohmic contact pressure of a preferred embodiment of the present invention and the graph of a relation of electroplated copper film thickness; And
Fig. 3 shows a kind of chemical plating copper schematic representation of apparatus according to a preferred embodiment of the present invention.
The assembly conventional letter
19: positive pole
20: power supply
21: negative pole
30: air cushioned seat
32: pore around non-
33: air cushion
34: pore on every side
36: thrust pad
38: thrust pad imposes on the pressure of wafer
40: wafer
42: the ring-type point contact electrode
44: electrolyte container
46: electrolytic solution
48: copper electrode
50/60: relation line
Embodiment
With reference to Fig. 1, it shows the synoptic diagram according to a kind of chemical plating principle of a preferred embodiment of the present invention.Chemical plating method of the present invention is applied to process for copper and forms copper conductor.Need to form earlier the copper crystal seed layer as electrode before chemical plating process on wafer, the copper crystal seed layer is as negative electrode 24 when electroplating, and the negative pole 21 of this negative electrode 24 and power supply 20 is connected.On the other hand, the anode 19 of copper electrode 22 and this power supply 20 is connected.When electroplating, cupric ion is dissociated out by this copper electrode 22, by the convection current (convection) of cupric ion and the effect of moving (migration), cupric ion can move near this negative electrode 24, and diffusion (diffusion) is to copper crystal seed layer (negative electrode) 24 at last.In order to remove the copper film that makes a circle in week of electroplating the back wafer, chemical plating copper method of the present invention prevents the deposition that the copper film made a circle in the week of wafer by ohmic contact (Ohmi-contact) pressure between control electroplating cathode (Cathode) and wafer.In other words, if the ohmic contact pressure between electroplating cathode and wafer is less than certain threshold value, and the copper film can't be deposited on the wafer.Therefore, in following preferred embodiment, (the ohmic contact pressure around this wafer is less to impose different ohmic contact pressure by making a circle in the week to wafer respectively with non-part on every side; The ohmic contact pressure of non-peripheral part of this wafer is bigger), prevent the deposition that the copper film made a circle in the week of this wafer.
With reference to Fig. 2, it shows according to a kind of ohmic contact pressure of a preferred embodiment of the present invention and the graph of a relation of electroplated copper film thickness.This figure is the graph of a relation of this ohmic contact pressure of being write down in the operating process of chemical plating and this electroplated copper film thickness.Relation line 60 expressions are when the electroplated copper film speed of this ohmic contact pressure greater than 158.585kpa (23psi) time; Relation line 50 expression is when the electroplated copper film speed of this ohmic contact pressure during less than 89.635kpa (13psi).The electroplated copper film speed of this relation line 60 is obviously many soon than this relation line 50.In preferred embodiment of the present invention, make a circle in the week of wafer and use the electroplated copper film speed of this relation line 50, the non-peripheral part of this of this wafer then uses the electroplated copper film speed of this relation line 60.Therefore, reached required thickness when non-peripheral part of this wafer in galvanized process, the periphery of this wafer makes a circle but can only deposit very thin copper film.
Fig. 3 shows a kind of chemical plating copper schematic representation of apparatus according to a preferred embodiment of the present invention.A kind of device of the chemical plating copper method that this figure display application is above-mentioned.This chemical plating device comprises power supply 20, electrolyte container 44, electrolytic solution 46, copper electrode 48, ring-type point contact electrode 42, thrust pad 36 and air cushioned seat 30.When chemical plating began to carry out, this wafer 40 was placed between this ring-type point contact electrode 42 and this thrust pad 36.This ring-type point contact electrode 42 these wafers 40 of contact have the one side of integrated circuit (IC), make copper crystal seed layer (not shown) on this wafer 40 connect this negative electricity 21 of this power supply 20.Therefore, can the deposited copper film on this copper crystal seed layer.This ohmic contact pressure of this ring-type point contact electrode 42 and 40 of this wafers is to provide by contacting with this thrust pad 36.The effect of this air cushioned seat 30 is pressure distribution of this thrust pad 36 of control and this wafer 40.This air cushioned seat 30 clamps down on this thrust pad 36 by the air cushion (air bearing) 33 of jet formation.For the deposition that prevents that this copper film from making a circle in the week of this wafer 40, this ohmic contact pressure that makes a circle in the week of this wafer 40 needs the pressure less than 89.635kpa.This air cushioned seat 30 is by reaching the different purpose of pressure with non-density different designs on every side around.This air cushioned seat 30 pore 34 density of part around is thinner, and closeer at the pore of the pore 32 of non-peripheral part.Applying pressure of the present invention distributes and controls galvanized zone.But the mode of exerting pressure is not limited to above-mentioned mode.The ohmic contact pressure that part around this of this wafer 40 is non-and this ring-type point contact electrode are 42 is greater than 158.585kpa, and the ohmic contact pressure that wafer 40 peripheral part and this ring-type point contact electrode are 42 is during less than 89.635kpa, the present invention just can prevent the deposition that this copper film made a circle in the week of this wafer, above-mentioned ohmic contact pressure is except need meet emergent pressure, and also needing not destroy wafer is principle.
By the invention described above preferred embodiment as can be known, use chemical plating copper method of the present invention, this ohmic contact pressure by between this electroplating cathode of control and this wafer can prevent the deposition that this copper film made a circle in the week of this wafer.In addition, the function of side washing assembly in the thrust pad of application chemical plating equipment of the present invention and the air cushioned seat known chemical electroplating device of desirable generation.
Though the present invention with a preferred embodiment openly as above; yet it is not to be used to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; can do various changes and polishing, so protection scope of the present invention is as the criterion with claims.
Claims (8)
1. a chemical plating copper method is applicable to the copper thin film electroplating on a wafer, and plated film can be plated in this wafer around, this chemical plating copper method comprises the following steps: at least
(a) with the positive pole of a power supply with place a fine copper sheet of an electrolytic solution to electrically connect;
(b) negative pole and the ring-type point contact electrode with this power supply electrically connects, and this ring-type point contact electrode contacts with this wafer;
(c) this wafer and this ring-type point contact electrode are immersed in this electrolytic solution together, carry out the chemical plating process for copper; And
(d) when electroplating, the pressure of contact surface needs less than 89.635kpa between peripheral part of this ring-type point contact electrode and wafer, and the pressure of the contact surface between non-peripheral part of this ring-type point contact electrode and this wafer needs greater than 158.585kpa.
2. chemical plating copper method as claimed in claim 1 wherein should contact this wafer by a thrust pad in (d) step, brought pressure to bear on the contact surface between this wafer and this ring-type point contact electrode.
3. a chemical plating copper device is applicable to the copper thin film electroplating on a wafer, and plated film can be plated in this wafer around, this chemical plating copper device comprises at least:
One power supply;
One electrolyte container, it contains electrolytic solution;
One copper electrode is connected with the positive pole of this power supply, and this copper electrode is placed in the electrolytic solution of this electrolyte container;
One ring-type point contact electrode is connected with the negative pole of this power supply, and this ring-type point contact electrode contacts this wafer; And
One thrust pad, contact this wafer, apply different pressures respectively in the contact surface around this wafer, between non-peripheral part and this ring-type point contact electrode, wherein the pressure of contact surface needs less than 89.635kpa between peripheral part of this ring-type point contact electrode and this wafer, and the pressure of the contact surface between non-peripheral part of this ring-type point contact electrode and this wafer needs greater than 158.585kpa.
4. chemical plating copper device as claimed in claim 3 also comprises an air cushioned seat, by jet this thrust pad that forces in, forces in contact surface between this wafer and this ring-type point contact electrode by this thrust pad again.
5. a subregion electroplated copper film method is applicable to that with the copper thin film electroplating this subregion copper thin film electroplating methods comprises the following steps: at least on the required galvanized zone of a wafer
The positive pole of one power supply is electrically connected with a fine copper sheet that is placed in the electrolytic solution;
The negative pole and a ring-type point contact electrode of this power supply are electrically connected, and this ring-type point contact electrode contacts with this wafer;
This wafer and this ring-type point contact electrode are immersed in this electrolytic solution together, carry out the technology of chemical plating copper; And
Apply the contact surface of pressure between the wafer galvanized zone of needs and this ring-type point contact electrode greater than 158.585kpa, with electroplated copper film, and apply less than the pressure of 89.635kpa and do not need contact surface between plating area and this ring-type point contact electrode, to prevent the copper thin film electroplating in this zone in wafer.
6. subregion copper thin film electroplating methods as claimed in claim 5 also comprises by a thrust pad bringing pressure to bear on contact surface between this wafer and this ring-type point contact electrode.
7. subregion copper thin film electroplating methods as claimed in claim 5 also comprises the density by gas orifice on the air cushioned seat, and ejection different pressures gas is to apply pressure on this thrust pad.
8. subregion copper thin film electroplating methods as claimed in claim 5, wherein not need galvanized zone be peripheral part of wafer to this wafer, it be non-peripheral part of wafer that this wafer needs galvanized zone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101234287A CN100393917C (en) | 2003-12-26 | 2003-12-26 | Chemical plating process and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101234287A CN100393917C (en) | 2003-12-26 | 2003-12-26 | Chemical plating process and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1635189A CN1635189A (en) | 2005-07-06 |
| CN100393917C true CN100393917C (en) | 2008-06-11 |
Family
ID=34844781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101234287A Expired - Lifetime CN100393917C (en) | 2003-12-26 | 2003-12-26 | Chemical plating process and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100393917C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351530A (en) * | 1999-11-04 | 2002-05-29 | 皇家菲利浦电子有限公司 | Method and apparatus for deposition on and polishing of a semiconductor surface |
| JP2002317300A (en) * | 2001-04-19 | 2002-10-31 | Tokyo Electron Ltd | Liquid treatment equipment and liquid treatment method |
| JP2002363788A (en) * | 2001-04-02 | 2002-12-18 | Mitsubishi Electric Corp | Chemical treatment equipment and plating treatment equipment and chemical treatment method, plating treatment method and residue removal treatment method as well as method of manufacturing semiconductor device and method of manufacturing printed circuit board using the same |
-
2003
- 2003-12-26 CN CNB2003101234287A patent/CN100393917C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351530A (en) * | 1999-11-04 | 2002-05-29 | 皇家菲利浦电子有限公司 | Method and apparatus for deposition on and polishing of a semiconductor surface |
| JP2002363788A (en) * | 2001-04-02 | 2002-12-18 | Mitsubishi Electric Corp | Chemical treatment equipment and plating treatment equipment and chemical treatment method, plating treatment method and residue removal treatment method as well as method of manufacturing semiconductor device and method of manufacturing printed circuit board using the same |
| JP2002317300A (en) * | 2001-04-19 | 2002-10-31 | Tokyo Electron Ltd | Liquid treatment equipment and liquid treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1635189A (en) | 2005-07-06 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080611 |
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| CX01 | Expiry of patent term |