CN100389639C - Dry etching device and air pore device fixing on the same - Google Patents
Dry etching device and air pore device fixing on the same Download PDFInfo
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- CN100389639C CN100389639C CNB2005100921093A CN200510092109A CN100389639C CN 100389639 C CN100389639 C CN 100389639C CN B2005100921093 A CNB2005100921093 A CN B2005100921093A CN 200510092109 A CN200510092109 A CN 200510092109A CN 100389639 C CN100389639 C CN 100389639C
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- dry etching
- vacuum chamber
- gas access
- gas
- electrode plate
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Abstract
The present invention relates to a dry etching device which uses plasmas to carry out thin film etching. The dry etching device is composed of a vacuum chamber, an upper electrode plate, a lower electrode plate, a plasma vacuum discharging zone, a power supply and a gas outlet, wherein the upper electrode plate is arranged in the vacuum chamber and is provided with at least one gas inlet which is used for introducing process gas, the lower electrode plate is arranged in the vacuum chamber, and the plasma vacuum discharging zone is arranged between the upper electrode plate and the lower electrode plate. The power supply is electrically connected with the upper electrode plate and the lower electrode plate and is used for providing the potential difference which is needed by the plasma vacuum discharging zone. The gas outlet is connected with the vacuum chamber and a vacuum system and is used for maintaining the plasma state in the vacuum chamber. The gas inlet is provided with a resin layer which is used for preventing the gas inlet from being etched.
Description
Technical field
The present invention relates to a kind of device for dry etching, particularly relate to a kind of air vent device, it is installed in the device for dry etching.
Background technology
A kind of technology of film etching is carried out in so-called dry ecthing (Dry Etching) exactly with plasma (Plasma).Because dry ecthing mainly is to utilize the physical phenomenon of particle bombardment to carry out etching, so the dry corrosion rate of etch that is engraved on vertical direction is much larger than transversely.So in thin-film technique, usually can carry out anisotropic etching with dry etching process.
General device for dry etching mainly is made up of vacuum chamber, electric pole plate, lower electrode plate, plasma vacuum discharge district, power supply and gas vent.Wherein, electric pole plate is installed in the vacuum chamber, and has the gas access thereon, and this gas access is in order to introducing technology gas.Traditionally, electric pole plate is made by aluminium or other metal material, therefore generally can plate the phenomenon that one deck anode film is avoided point discharge near the gas access of electric pole plate.Lower electrode plate also is installed in the vacuum chamber, and plasma vacuum discharge district is between electric pole plate and lower electrode plate.Power supply is electrically connected electric pole plate and lower electrode plate, in order to provide plasma vacuum discharge district required potential difference.Gas vent connects vacuum chamber and vacuum system, in order to keep the plasmoid in the vacuum chamber.The plasma that utilizes the high voltage electric field interaction in the plasma vacuum discharge district to be produced comes etching.
Yet, the gas access that the plasma in plasma vacuum discharge district similarly can etching electric pole plate and lower electrode plate, particularly electric pole plate because of pore be right angle its compactness when generating the anode mould low thus near easier to be etched.If etched the exhausting of anode film of plating on the electric pole plate, and the aluminium of electric pole plate or other metal material are exposed, will make near the problem that produces point discharge the gas access.In addition, owing under the lasting etching action of plasma, will make the etching electric pole plate and spatter the particle pollution vacuum chamber that flies.
Comprehensive the above, avoid the subject plasma etching near how can protecting the gas access of electric pole plate, and then avoid the problem of point discharge and particle pollution, be that designer, the user of dry ecthing relevant device looks forward to jointly with producer institute.
In above-mentioned background of invention, because the plasma that the high-tension electricity place in traditional device for dry etching produces, in etch process also near the etching electric pole plate, particularly gas access.This will cause problems such as gas access point discharge and the interior particle pollution of vacuum chamber.
Summary of the invention
Therefore purpose of the present invention is providing a kind of air vent device exactly, is installed in the dry ecthing equipment, and this air vent device utilizes the made pore body of resin material to protect the gas access of dry ecthing equipment to avoid etched influence.
Another object of the present invention is that a kind of device for dry etching is being provided, and it has resin bed and is installed on the gas access, avoids suffering etching in order to the gas atmosphere inlet, and then avoids producing the problem of point discharge in the place, gas access.
Another purpose of the present invention is that a kind of device for dry etching is being provided, and it has resin bed and is installed on the gas access, avoids suffering etching in order to the gas atmosphere inlet, and then avoids producing in the vacuum chamber problem of particle pollution.
According to above-mentioned purpose of the present invention, a kind of device for dry etching is proposed, it utilizes plasma to carry out film etching.This device for dry etching is made up of vacuum chamber, electric pole plate, lower electrode plate, plasma vacuum discharge district, power supply and gas vent.Wherein, electric pole plate is installed in the vacuum chamber, and has the gas access, and this gas access is in order to introducing technology gas.Lower electrode plate also is installed in the vacuum chamber, and plasma vacuum discharge district is between electric pole plate and lower electrode plate.Power supply is electrically connected electric pole plate and lower electrode plate, in order to provide plasma vacuum discharge district required potential difference.Gas vent connects vacuum chamber and vacuum system, in order to keep the plasmoid in the vacuum chamber.And above-mentioned gas access also has a resin bed, avoids etched influence in order to the gas atmosphere inlet.
According to one embodiment of the present invention, above-mentioned resin bed is made by polyimides (Polyimide).In addition, the gas access also can have a recessed edge, is positioned at an end of gas access and vacuum chamber adjacency.And resin bed also can have a flange, and this flange and above-mentioned recessed edge cooperatively interact, with so that resin bed is installed on the gas access.
Device for dry etching of the present invention, it has utilized the resin bed that is installed on the gas access to come the gas atmosphere inlet to avoid etched influence.In addition, because the gas access does not suffer etching, so therefore alleviate in problems such as the point discharge of gas access and the particle pollutions in the vacuum chamber yet.
Description of drawings
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, appended graphic being described in detail as follows:
Fig. 1 is a kind of schematic diagram that illustrates according to the device for dry etching of one embodiment of the present invention.
Fig. 2 is a kind of schematic diagram that illustrates according to the gas access of one embodiment of the present invention.
The simple symbol explanation
100: device for dry etching 110: vacuum chamber
120: electric pole plate 122: gas access
124: recessed edge 130: lower electrode plate
140: plasma vacuum discharge district 150: power supply
160: gas vent 210: resin bed
212: flange 214: blow vent
Embodiment
Device for dry etching of the present invention can be avoided suffering plasma etching near the gas access, makes problems such as point discharge and particle pollution effectively to descend.Below will clearly demonstrate spirit of the present invention with icon and detailed description, as those skilled in the art after understanding the preferred embodiments of the present invention, when can be by the technology of teachings of the present invention, change and modification, it does not break away from spirit of the present invention and scope.
With reference to Fig. 1, it illustrates the schematic diagram according to the device for dry etching of one embodiment of the present invention.As shown in FIG., this device for dry etching 100 is made up of vacuum chamber 110, electric pole plate 120, lower electrode plate 130, plasma vacuum discharge district 140, power supply 150 and gas vent 160.Wherein, electric pole plate 120 is installed in the vacuum chamber 110, and has at least one gas access 122, and this gas access 122 is in order to introducing technology gas.
Wherein, electric pole plate 120 is generally made by aluminium or other metal material.Also can plate one deck anode film on this electric pole plate 120, produce with the phenomenon of avoiding point discharge.
And above-mentioned process gas can be hydrogen chloride or hydrogen.Yet process gas is not limited to this, and this process gas also can be selected suitable gas along with arts demand for use.
With reference to Fig. 2, it illustrates the schematic diagram according to the gas access of one embodiment of the present invention.In Fig. 2, gas access 122 also has a resin bed 210, avoids etched influence in order to gas atmosphere inlet 122.
In the present embodiment, resin bed 210 is made by polyimides.Right this resin bed 210 also can be other resin material.
Wherein, gas access 122 also can have a recessed edge 124, and this recessed edge 124 is positioned at an end of gas access 122 and vacuum chamber 110 adjacency.And resin bed 210 also can have a flange 212, and this flange 212 cooperatively interacts with recessed edge 124, makes resin bed 210 be fixed in gas access 122 in the mode of fastening plug.Right as long as without prejudice to spirit of the present invention, the fixed form of using other form also can, as bolt, screw, sticker or other similar mode.
As shown in Figure 2, resin bed 210 also can have a blow vent 214.This blow vent 214 connects gas access 122 and vacuum chamber 110, in order to introducing technology gas.
By the invention described above preferred embodiment as can be known, use the present invention and have following advantage.
(1), and then near the point discharge problem in gas access of electric pole plate is slowed down because device for dry etching of the present invention has utilized resin bed to protect the gas access of electric pole plate to avoid etched influence.
(2), and then the particle pollution problem in the vacuum chamber is slowed down because device for dry etching of the present invention has utilized resin bed to protect the gas access of electric pole plate to avoid etched influence.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (11)
1. device for dry etching, it utilizes plasma to carry out film etching, and this device for dry etching comprises at least:
One vacuum chamber;
One electric pole plate is installed in this vacuum chamber, and this electric pole plate comprises at least one gas access, in order to import a process gas;
One lower electrode plate is installed in this vacuum chamber;
One plasma vacuum discharge district is positioned at this vacuum chamber, and between this electric pole plate and this lower electrode plate;
One power supply is electrically connected this electric pole plate and this lower electrode plate, in order to this plasma vacuum discharge district one potential difference to be provided; And
At least one gas vent connects this vacuum chamber and a vacuum system, in order to keep the plasmoid in this vacuum chamber;
Wherein, this at least one gas access also comprises a resin bed, and this resin bed is installed on this at least one gas access.
2. device for dry etching as claimed in claim 1, wherein this resin bed comprises polyimide material.
3. device for dry etching as claimed in claim 1, wherein this electric pole plate comprises metal level.
4. device for dry etching as claimed in claim 3, wherein this electric pole plate comprises anode film, and this anode film is positioned on this metal level.
5. device for dry etching as claimed in claim 3, wherein this metal level comprises aluminium.
6. device for dry etching as claimed in claim 1, wherein this process gas comprises hydrogen chloride.
7. device for dry etching as claimed in claim 1, wherein this process gas comprises hydrogen.
8. device for dry etching as claimed in claim 1, wherein this at least one gas access comprises a recessed edge, and this recessed edge is positioned at an end of this at least one gas access and this vacuum chamber adjacency.
9. device for dry etching as claimed in claim 8, wherein this resin bed comprises a flange, and this flange cooperates this recessed edge, with so that this resin bed is installed on this at least one gas access.
10. device for dry etching as claimed in claim 1, wherein this resin bed comprises a blow vent, and this blow vent connects this at least one gas access and this vacuum chamber, in order to import this process gas.
11. device for dry etching as claimed in claim 1, wherein this resin bed is installed in the mode of fastening plug with this at least one gas access.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100921093A CN100389639C (en) | 2005-08-19 | 2005-08-19 | Dry etching device and air pore device fixing on the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100921093A CN100389639C (en) | 2005-08-19 | 2005-08-19 | Dry etching device and air pore device fixing on the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1735313A CN1735313A (en) | 2006-02-15 |
| CN100389639C true CN100389639C (en) | 2008-05-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100921093A Expired - Fee Related CN100389639C (en) | 2005-08-19 | 2005-08-19 | Dry etching device and air pore device fixing on the same |
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| Country | Link |
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| CN (1) | CN100389639C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101498940B (en) * | 2008-01-31 | 2011-01-19 | 中芯国际集成电路制造(上海)有限公司 | Method and apparatus for protecting bottom electrode component in plasma etching equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03229886A (en) * | 1990-02-01 | 1991-10-11 | Res Dev Corp Of Japan | Atmospheric glow etching method |
| JP2001059894A (en) * | 1999-08-24 | 2001-03-06 | Fuji Electric Co Ltd | Plasma processing device |
| CN1154157C (en) * | 1995-05-25 | 2004-06-16 | 泰格尔公司 | Plasma etch system |
-
2005
- 2005-08-19 CN CNB2005100921093A patent/CN100389639C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03229886A (en) * | 1990-02-01 | 1991-10-11 | Res Dev Corp Of Japan | Atmospheric glow etching method |
| CN1154157C (en) * | 1995-05-25 | 2004-06-16 | 泰格尔公司 | Plasma etch system |
| JP2001059894A (en) * | 1999-08-24 | 2001-03-06 | Fuji Electric Co Ltd | Plasma processing device |
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| CN1735313A (en) | 2006-02-15 |
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