CN100378984C - Constant temperature electromigration test structure and its fillet optical adjacent correction method - Google Patents
Constant temperature electromigration test structure and its fillet optical adjacent correction method Download PDFInfo
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- CN100378984C CN100378984C CNB2005100300064A CN200510030006A CN100378984C CN 100378984 C CN100378984 C CN 100378984C CN B2005100300064 A CNB2005100300064 A CN B2005100300064A CN 200510030006 A CN200510030006 A CN 200510030006A CN 100378984 C CN100378984 C CN 100378984C
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- electromigration test
- temperature electromigration
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Abstract
The method modifies wire structure in use for conventional test to rounded angle structure in circular arc shape at turning places from shapes of right angle and zigzag, or shapes of approximate right angle and zigzag. Thus, the invention solves issue that electromigration test under constant temperature cannot be carried out caused by uneven film resistor existed in former structure.
Description
Technical field
The present invention relates to a kind of constant temperature electromigration test structure, and the modification method that obtains this structure, relate in particular to the method for improving constant temperature electromigration test structure with the means of optical proximity correction.
Background technology
In semiconductor fabrication process,, need do every test, comprising constant temperature electromigration test in order to guarantee the performance of product.Usually in order to guarantee the requirement of semiconductor device reduced volume, as shown in Figure 1, the indentation structure that metal wire in the semiconductor components and devices can adopt is to save the space, such structure is brought a problem, when it is carried out the wafer scale constant temperature electromigration test, can there be corner effect (Corner Effect) in the corner of metal wire, before carrying out normal electro-migration testing, big electric current causes the metal wire infringement that does not expect to have easily earlier at 1 place that indicates with circle, finally cause test crash, in fact the zone that records the result like this is that section at 1 turning of sign from the metal wire section start to circle, and actual hope test, be complete metal wire.
Those skilled in the art should know easily, the process of constant temperature electromigration test, be on non electrically conductive material, to apply voltage to form conductive strips, metallic in the conductive strips will carry out electromigration owing to the voltage that is applied under constant temperature during this time, back segment (2 zones that indicate among Fig. 1) at metal wire forms the metal wire cavity at last, and conductive strips are disconnected.Gathering the data that need in this overall process is the purposes of carrying out constant temperature electromigration test.If failure occurred at 1 place, will inevitably be less than correct test result.In present practical application, can not solve because the existence of above-mentioned corner corner effect (CornerEffect), and causing that constant temperature electromigration test can not get correct result's problem, the inventor wishes by the structure correction of metal wire is solved this problem.
Consider that above-mentioned correction may bring the problem of structure distortion, the inventor also wishes to revise the effect of back structure by the means of optical proximity correction to reach accurate analoging reproduction.Photoetching technique is the actuating force of integrated circuit fabrication process development, also is a wherein the most complicated technology.With respect to other single manufacturing technology, photoetching has revolutionary contribution to the raising of chip performance.Before photoetching process begins, the structure of integrated circuit can be earlier by specific device replication to a piece on the quartz glass plate of big (with respect to the silicon chip of production usefulness) mask by name, the light (as 248 microns ultraviolet ray) that produces specific wavelength by lithographic equipment copies to the structure of integrated circuit on the mask on the used silicon chip of production chip then.Duplicate from mask the silicon chip process at this, can produce the distortion of circuit structure.Especially present 180 microns and following manufacturing process stage have been arrived, if this distortion does not go correction can cause the failure of whole manufacturing technology.This distortion is owing to optical approximate effect (Optical Proximity Effect) causes.Correct this distortion, the common practice of semiconductor industry is to utilize the method for carrying out structure compensation in advance on mask, and this technology is called the correction of optical approximate effect again, is called for short OPC (Optical Proximity Effect Correction).
Undertaken in advance circuit structure on the mask being compensated by calculating some data that photoetching process produces in the integrated circuit production, thereby reach the distortion of chip circuit structure minimum degree on silicon chip, the rate of finished products that this has improved in the chip production process has guaranteed the normal function of integrated circuit.In Chinese patent application 02141166.2, describe traditional optical proximity correction of utilizing in detail and proofread and correct the method for mask pattern.The correction of optical approximate effect also provides extremely strong motive force to the innovation of ic manufacturing technology in addition, becomes a requisite link in the present semi-conductive production process.
Optical proximity correction generally is divided into rule-based OPC (rule based OPC) and based on the OPC (model based OPC) of model, the former adds the enhanced features pattern at last handling process for the pattern that all satisfy given standard; And the latter can carry out emulation to the actual exposure result of characteristic pattern, though speed is more accurate slowly, it utilizes model method to add the coupling that the enhanced features pattern can be realized dummy feature pattern and physical Design.
Summary of the invention
The objective of the invention is to, a kind of modification method to constant temperature electromigration test structure is provided, revise, avoid corner effect (Corner Effect) to cause that test result is incorrect by shape to the structure of needs tests.
The invention provides a kind of method of revising constant temperature electromigration test structure, its correction is the turning at the indentation metal wire, its shape from the angle is modified to the shape of circular arc.
Corner effect (Corner Effect) makes big electric current cause that in metal wire corner the phenomenon of metal wire infringement can explain like this, since in the live width of metal wire corner greater than the live width of corner metal wire not, so film resistor herein (Sheet Resistance) is than the corner is not little.According to Ohm's law, P=V
2/ R can learn that resistance value is more little when voltage is constant, and power is big more, as electric current by the time heat that produces also big more.Therefore the inhomogeneous of thin-film electro resistance causes that power is inhomogeneous everywhere, finally makes the heat that produces also inhomogeneous (heat that same electric current produces around the corner is big) everywhere, is to cause corner easily by the reason of big electric current infringement.
The present invention proposes a kind of scheme of revising constant temperature electromigration test structure in view of the above, usually can adopt OPC (Optical Proximity Effect Correction, optical proximity correction), its objective is the thin-film electro resistance of metal wire corner and other ground can be consistent, after the metal wire turning is modified to the shape of circular arc from the shape at angle, can address this problem well, because live width on the circular arc everywhere is all the same with other live width everywhere, do not have the somewhere live width and exceed other local situation, therefore the corner can not be easy to the big electric current infringement that forms when tested, and whole test process is normally finished.
The advantage of the inventive method is, it has solved the problem that traditional indentation metal wire structure can not be carried out constant temperature electromigration test, by method of the present invention, only need carry out simple modification and can not increase processing step institute's test structure, and amended structure can normally be finished conventional constant temperature electromigration test.
For be more readily understood purpose of the present invention, feature with and advantage, below conjunction with figs. and embodiment are described in detail the present invention.
Description of drawings
The accompanying drawing that comprises among the application is a component part of specification, and accompanying drawing and specification and claims one are used from explanation flesh and blood of the present invention, are used for understanding better the present invention.In the accompanying drawing:
The metal wire structure schematic diagram of Fig. 1 available technology adopting, numeral 1 indicates the metal wire turning, and numeral 2 indicates the place that desirable test process conductive strips disconnect;
Fig. 2 is according to the revised metal wire structure schematic diagram of technical solution of the present invention;
Embodiment
In order to understand content of the present invention better, the invention will be further described below in conjunction with embodiment, but these embodiment are not construed as limiting the present invention.
In the photoetching process that forms the metal wire test structure, forming the corner earlier on mask is the indentation metal line pattern of circular arc, carries out photoetching then, and the metal wire structure that obtains as shown in Figure 2.Wherein the live width of metal wire equals the spacing of adjacent two metal wires parallel to each other, is that the outer arc radius is 1.5 times of metal wire live width to the specific requirement of this metal wire fillet structure.In order after photoetching process, to obtain above-mentioned arc structure better, can carry out optical proximity correction to corresponding metal line pattern on the mask earlier.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the specification just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the present invention.The scope of protection of present invention is defined by appending claims and equivalent thereof.
Claims (6)
1. constant temperature electromigration test structure, the indentation metal wire that need carry out constant temperature electromigration test adopts this structure, it is characterized in that, and the corner of indentation metal wire is a circular arc, forms fillet structure.
2. constant temperature electromigration test structure as claimed in claim 1, wherein the outer arc radius of fillet structure is 1.5 times of metal wire live width.
3. constant temperature electromigration test structure as claimed in claim 2, wherein the metal wire live width equals the spacing of adjacent wires.
4. a method of revising constant temperature electromigration test structure is characterized in that, the metal wire structure that will be used to test is revised as the fillet structure that the corner is a circular arc from right angle complications or approximate right angle meander-shaped.
5. method as claimed in claim 4 is characterized in that, the outer arc radius of described fillet structure is 1.5 times of metal wire live width.
6. method as claimed in claim 4 is characterized in that, earlier corresponding metal line pattern on the mask is carried out the optical proximity effect correction before etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100300064A CN100378984C (en) | 2005-09-23 | 2005-09-23 | Constant temperature electromigration test structure and its fillet optical adjacent correction method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100300064A CN100378984C (en) | 2005-09-23 | 2005-09-23 | Constant temperature electromigration test structure and its fillet optical adjacent correction method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1937218A CN1937218A (en) | 2007-03-28 |
| CN100378984C true CN100378984C (en) | 2008-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2005100300064A Expired - Fee Related CN100378984C (en) | 2005-09-23 | 2005-09-23 | Constant temperature electromigration test structure and its fillet optical adjacent correction method |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103324035B (en) * | 2013-06-20 | 2015-07-01 | 深圳市华星光电技术有限公司 | Mask plate and manufacture method of array base plate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5517057A (en) * | 1994-12-20 | 1996-05-14 | International Business Machines Corporation | Electronic modules with interconnected surface metallization layers |
| CN1482468A (en) * | 2002-09-13 | 2004-03-17 | 中芯国际集成电路制造（上海）有限公 | Structure and method for testing contact resistance of detecting probe |
| CN1581464A (en) * | 2003-08-06 | 2005-02-16 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor element manufacturing method by detecting nitride content of gage silicon oxide layer |
-
2005
- 2005-09-23 CN CNB2005100300064A patent/CN100378984C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5517057A (en) * | 1994-12-20 | 1996-05-14 | International Business Machines Corporation | Electronic modules with interconnected surface metallization layers |
| CN1482468A (en) * | 2002-09-13 | 2004-03-17 | 中芯国际集成电路制造（上海）有限公 | Structure and method for testing contact resistance of detecting probe |
| CN1581464A (en) * | 2003-08-06 | 2005-02-16 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor element manufacturing method by detecting nitride content of gage silicon oxide layer |
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| CN1937218A (en) | 2007-03-28 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
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Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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