CN100378031C - Low temperature sintered microwave dielectric ceramics and its preparing method - Google Patents

Low temperature sintered microwave dielectric ceramics and its preparing method Download PDF

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CN100378031C
CN100378031C CNB200610024556XA CN200610024556A CN100378031C CN 100378031 C CN100378031 C CN 100378031C CN B200610024556X A CNB200610024556X A CN B200610024556XA CN 200610024556 A CN200610024556 A CN 200610024556A CN 100378031 C CN100378031 C CN 100378031C
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microwave dielectric
sintering
low temperature
temperature sintered
materials
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CN1821171A (en
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李蔚
曾群
施剑林
吴文骏
郭景坤
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Shanghai Institute of Ceramics of CAS
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Abstract

The present invention relates to low-temperature sintered microwave dielectric ceramics and a preparing method thereof, which belongs to the field of microwave dielectric ceramics. The materials are prepared from Li<2+x>Nb<3x>Ti<1-4x>O3+yB2O3 (0<x<0.2, 0<=y<=5 wt%); the materials of the present invention are obtained according to a corresponding technology. The novel Li<2+x>Nb<3x>Ti<1-4x>O3 solid solution microwave dielectric materials of the present invention has low inherent sintering temperature (about 1100 DEG C) and good microwave dielectric properties: the dielectric constant (epsilon<r>) is 15 to 25, Q*f (Q is a quality factor) is not below 45000 GHz, and the temperature coefficient (tau<f>) of resonance frequency is small and is adjusted; by doping a small quantity of sintering assistants, the sintering temperature of the materials can be lowered to below 900 DEG C, and simultaneously, the good microwave dielectric properties are kept. The materials of the present invention have low cost, simple and stable technology and high repeatability, satisfy the technical requirement of low-temperature cofired ceramics, are suitable for manufacturing multi-layer chip components such as dielectric resonators, filters, etc. adopting base metal such as silver, copper, etc. as inner electrodes, and have wide application prospects.

Description

A kind of low temperature sintered microwave dielectric and preparation method thereof
Technical field
The present invention relates to a kind of low sintering novel microwave dielectric pottery and preparation method thereof, belong to the microwave-medium ceramics field of material subject.
Background technology
Microwave-medium ceramics is the nearly 30 years new function electronic ceramicss that develop rapidly, has characteristics such as loss is low, frequency-temperature coefficient is little, specific inductivity height.Microwave-medium ceramics can be made dielectric resonator, wave filter, microwave-medium antenna etc., is widely used in various fields such as mobile communication, satellite television broadcasting communication, radar.In recent years, along with the direction of modern mobile communication equipment towards microminiaturized, integrated, high reliability and low cost, chip type, environmental protection develops, can become the main flow of development for the multilayer chip element on basis with the microwave-medium ceramics (Low Temperature Co-firedCeramic is called for short LTCC) that Cu or Ag burn altogether.
As the LTCC material, not only require proper dielectric constant, low dielectric loss and little temperature coefficient of resonance frequency more require the sintering temperature of material must be lower than 1000 ℃ or 950 ℃, so as with the copper of high conductivity or silver metal in electrode burn altogether.But the sintering temperature of present most of commercial microwave media ceramics is all at 1200～1500 ℃, as BaTi 4O 9, Ba 2Ti 9O 20, (Zn, Sn) TiO 4And (Pb, Ca) (Zr, Ti) O 3, their sintering temperature is higher than the fusing point of Cu, Ag far away.Therefore, in order to realize burning altogether, must seek new low-temp sintered material or existing microwave dielectric material is carried out low temperature research with base metal.For reducing the sintering temperature of microwave dielectric ceramic materials, traditional method has three kinds: sintering aids such as oxide compound that admixture is suitable or low melting glass; Adopt chemical synthesis process and use superfine powder to make starting raw material and select the lower material of intrinsic sintering temperature for use.Although the admixture of oxide compound or low melting glass can effectively reduce the sintering temperature of stupalith, owing to need the amount of admixture bigger, and the microwave dielectric property of material has been brought damage in various degree; Adopt chemical synthesis process then to need complicated treatment step, can increase the production cost and the time of microwave-medium components and parts greatly.Generally speaking, at present a lot of material systems are because there are problems such as sintering temperature height, material at low temperatureization and dielectric properties can not have both in the material self character, and the microwave dielectric ceramic materials that really can be used as the LTCC material seldom.Therefore seek and use the novel lower microwave dielectric material of intrinsic sintering temperature to cause domestic and international researchist's very big interest.Several years ago, Peter K.Davies is at Li 2O-Nb 2O 5-TiO 2Reported a kind of " M-phase " Li in the system 1+x-yNb 1-x-3yTi X+4yO 3The intrinsic sintering temperature of solid-solution material low (～1100 ℃), and have excellent microwave dielectric property (ε r=78-55, a tunable τ f, Q * f up to 9000 (6GHz)).But at present also few to this material system research with sintering temperature and low, also not deeply, other phase material of this system especially their microwave dielectric property is not also lacked research.
Summary of the invention
The objective of the invention is provides a kind of based on Li for overcoming the weak point of existing microwave dielectric material technology 2O-Nb 2O 5-TiO 2The novel Li that the another kind of intrinsic sintering temperature that is different from " M-phase " of system is low with excellent properties 2+xNb 3xTi 1-4xO 3The sosoloid microwave dielectric material, and by a spot of sintering agent B that mixes 2O 3, successfully reduce below its sintering temperature to 900 ℃, keeping excellent microwave dielectric property simultaneously.This material is a kind of material that has development prospect.
A kind of low sintering novel microwave dielectric pottery that the present invention proposes and preparation method thereof comprises following content:
1. prepare burden by following proportioning:
Li 2+xNb 3xTi 1-4xO 3, 0＜x＜0.2 wherein
Additive B 2O 3With Li 2+xNb 3xTi 1-4xO 3Weight ratio y:0≤y≤5wt%
Its final structure is Li 2+xNb 3xTi 1-4xO 3Solid solution structure.
2. Li 2CO 3, Nb 2O 5And TiO 2By above-mentioned chemical formula Li 2+xNb 3xTi 1-4xO 3Preparing burden, is to add deionized water at 1: 1.8 by the weight ratio of compound and deionized water, and the wet ball-milling method is mixed 24～36h, 100～150 ℃ of oven dry, and in the high alumina crucible of packing into, at 700 ℃～900 ℃ pre-burning 5h～8h, synthetic principal crystalline phase.
3. the B that adds 0～5wt% in the powder after above-mentioned pre-burning 2O 3, be 1: 1.2 adding alcohol by the weight ratio of compound and alcohol, 4%～8%PVA granulation is adopted in discharging behind wet ball grinding 24h～36h, 100～150 ℃ of oven dry, is pressed into sequin under the pressure of 100～200MPa, at 600～700 ℃ of binder removals.B does not mix 2O 3Ceramics sample be placed between inherent 1000 ℃～1200 ℃ of the alumina crucible and carry out sintering 1～3h, doping B 2O 3Ceramics sample be placed between inherent 840 ℃～950 ℃ of the alumina crucible and carry out sintering 2～5h, naturally cooling promptly obtains material of the present invention.
Adopt above-mentioned chemical formula Li 2+xNb 3xTi 1-4xO 3The present invention that prescription and technology are formed can obtain DIELECTRIC CONSTANT rAdjustable between 15～25, quality factor q * f is not less than 45, and 000GHz (resonant frequency f=5～9GHz), temperature coefficient of resonance frequency τ fLittle and adjustable, and the novel microwave dielectric ceramic material of intrinsic sintering temperature lower (～1100 ℃), in addition, by a spot of B that mixes 2O 3, be not higher than the stupalith that has obtained to have excellent microwave dielectric property under 900 ℃ the sintering temperature.This invention material is a kind of material that has development prospect, is expected to become a kind of LTCC novel material.
The present invention has following characteristics:
This novel sosoloid microwave dielectric pottery, its intrinsic sintering temperature low (～1100 ℃), and microwave dielectric property is very excellent: specific inductivity (ε r) be 15～25, Q*f value (Q is quality factor) is not less than 45,000GHz and little and adjustable temperature coefficient of resonance frequency.
The material doped a spot of sintering agent low to this intrinsic sintering temperature, its sintering temperature can be reduced to below 900 ℃, keep very excellent microwave dielectric property simultaneously, can be used for preparing multilayer chip elements such as integrated multilayered medium resonator, wave filter.
The cost of material is low in the present invention, technology simple and stable, favorable reproducibility, helps suitability for industrialized production.
Description of drawings
Fig. 1 (a～d) for being respectively the X-Ray diffractogram of the embodiment of the invention 1～4;
Fig. 2 (a～d) for being respectively the 0.5wt%～5wt%B that mixes in the embodiment of the invention 5 2O 3Pottery
The X-Ray diffractogram.
Embodiment
Below in conjunction with embodiment the present invention is further described.
Embodiment 1:
According to x=0.01, Li in molar ratio in the material principal crystalline phase expression formula 2CO 3: Nb 2O 5: TiO 2=5.05: weighing in 0.15: 9.6, weight ratio by compound and deionized water is 1: 1.8 adding deionized water, wet ball grinding 24h, 100～150 ℃ of oven dry, pack in the high alumina crucible, at 850 ℃ of pre-burning 6h, powder is pulverized again after the pre-burning, by compound and alcoholic acid weight ratio is 1: 1.2 adding ethanol, after carrying out wet ball grinding 24h, discharging, 4%～8%PVA granulation is adopted in oven dry, under the pressure of 100～200MPa, be pressed into diameter 16mm, the sequin of thickness 7～8mm, at 650 ℃ of binder removals, sample is placed on the inherent 1100 ℃ of sintering 2h of alumina crucible then, naturally cooling obtains material of the present invention.Test its dielectric properties (room temperature) with Hakki-Colemen cylindrical dielectric resonance method, wherein temperature coefficient of resonance frequency obtains in-25 ℃～85 ℃ scopes.Its dielectric properties are: DIELECTRIC CONSTANT r=23.7, quality factor q * f=48586GHz, resonant frequency f=6.724GHz, temperature coefficient of resonance frequency τ f=36.17ppm/ ℃.And having identified its thing phase composite (Fig. 1 (a) shows the X-Ray diffractogram of this embodiment 1 ceramics sample) with X-Ray, XRD result shows that it is the Li of Nb solid solution 2TiO 3Solid solution structure.
Embodiment 2:
According to x=0.04, Li in molar ratio in the material principal crystalline phase expression formula 2CO 3: Nb 2O 5: TiO 2=17: weighing in 1: 14, weight ratio by compound and deionized water is 1: 1.8 adding deionized water, wet ball grinding 24h, 100～150 ℃ of oven dry, pack in the high alumina crucible, at 850 ℃ of pre-burning 6h, powder is pulverized again after the pre-burning, by compound and alcoholic acid weight ratio is 1: 1.2 adding ethanol, after carrying out wet ball grinding 24h, discharging, 4%～8%PVA granulation is adopted in oven dry, under the pressure of 100～200MPa, be pressed into diameter 16mm, the sequin of thickness 7～8mm, at 650 ℃ of binder removals, sample is placed on the inherent 1100 ℃ of sintering 2h of alumina crucible then, naturally cooling obtains material of the present invention.Test its dielectric properties (room temperature) with Hakki-Colemen cylindrical dielectric resonance method, wherein temperature coefficient of resonance frequency obtains in-25 ℃～85 ℃ scopes.Its dielectric properties are: DIELECTRIC CONSTANT r=19.5, quality factor q * f=48958GHz, resonant frequency f=8.416GHz, temperature coefficient of resonance frequency τ f=27.4ppm/ ℃.And having identified its thing phase composite (Fig. 1 (b) shows the X-Ray diffractogram of these embodiment 2 ceramics samples) with X-Ray, XRD result shows that it is the Li of Nb solid solution 2TiO 3Solid solution structure.
Embodiment 3:
According to x=0.081, Li in molar ratio in the material principal crystalline phase expression formula 2CO 3: Nb 2O 5: TiO 2=10.405: weighing in 1.215: 6.76, weight ratio by compound and deionized water is 1: 1.8 adding deionized water, wet ball grinding 24h, 100～150 ℃ of oven dry, pack in the high alumina crucible, at 850 ℃ of pre-burning 6h, powder is pulverized again after the pre-burning, by compound and alcoholic acid weight ratio is 1: 1.2 adding ethanol, after carrying out wet ball grinding 24h, discharging, 4%～8%PVA granulation is adopted in oven dry, under the pressure of 100～200MPa, be pressed into diameter 16mm, the sequin of thickness 7～8mm, at 650 ℃ of binder removals, sample is placed on the inherent 1100 ℃ of sintering 2h of alumina crucible then, naturally cooling obtains material of the present invention.Test its dielectric properties (room temperature) with Hakki-Colemen cylindrical dielectric resonance method, wherein temperature coefficient of resonance frequency obtains in-25 ℃～85 ℃ scopes.Its dielectric properties are: DIELECTRIC CONSTANT r=20, quality factor q * f=49737GHz, resonant frequency f=7.754GHz, temperature coefficient of resonance frequency τ f=13.5ppm/ ℃.And having identified its thing phase composite (Fig. 1 (c) shows the X-Ray diffractogram of these embodiment 3 ceramics samples) with X-Ray, XRD result shows that it is the Li of Nb solid solution 2TiO 3Solid solution structure.
Embodiment 4:
According to x=0.142, Li in molar ratio in the material principal crystalline phase expression formula 2CO 3: Nb 2O 5: TiO 2=10.71: weighing in 2.13: 4.32, weight ratio by compound and deionized water is 1: 1.8 adding deionized water, wet ball grinding 24h, 100-150 ℃ of oven dry, pack in the high alumina crucible, at 850 ℃ of pre-burning 6h, powder is pulverized again after the pre-burning, by compound and alcoholic acid weight ratio is 1: 1.2 adding ethanol, after carrying out wet ball grinding 24h, discharging, 4%～8%PVA granulation is adopted in oven dry, under the pressure of 100～200MPa, be pressed into diameter 16mm, the sequin of thickness 7～8mm, at 650 ℃ of binder removals, sample is placed on the inherent 1100 ℃ of sintering 2h of alumina crucible then, naturally cooling obtains material of the present invention.Test its dielectric properties (room temperature) with Hakki-Colemen cylindrical dielectric resonance method, wherein temperature coefficient of resonance frequency obtains in-25 ℃～85 ℃ scopes.Its dielectric properties are: DIELECTRIC CONSTANT r=17.4, quality factor q * f=50146GHz, resonant frequency f=8.545GHz, temperature coefficient of resonance frequency τ f=-34ppm/ ℃.And having identified its thing phase composite (Fig. 1 (d) shows the X-Ray diffractogram of these embodiment 4 ceramics samples) with X-Ray, XRD result shows that it is the Li of Nb solid solution 2TiO 3Solid solution structure.
Embodiment 5:
According to x=0.081, Li in molar ratio in the material principal crystalline phase expression formula 2CO 3: Nb 2O 5: TiO 2=10.71: weighing in 2.13: 4.32, weight ratio by compound and deionized water is 1: 1.8 adding deionized water, wet ball grinding 24h, 100-150 ℃ of oven dry is in the high alumina crucible of packing into, at 850 ℃ of pre-burning 6h, powder is pulverized again after the pre-burning, the 0.5wt% that mixes respectively, 1.5wt%, the B of 3.0wt% and 5.0wt% 2O 3, be to add ethanol at 1: 1.2 by compound and alcoholic acid weight ratio, carry out wet ball grinding 24h after, 4%～8%PVA granulation is adopted in discharging, oven dry respectively, is pressed into diameter 16mm under the pressure of 100～200MPa, the sequin of thickness 7～8mm is 650 ℃ of binder removals, different B then 2O 3The ceramic sample of doping is placed on the inherent 880 ℃ of sintering 4h of alumina crucible, and naturally cooling obtains doped ceramics material of the present invention.Test its dielectric properties (room temperature) with Hakki-Colemen cylindrical dielectric resonance method, wherein temperature coefficient of resonance frequency obtains in-25 ℃～85 ℃ scopes.This different B 2O 3Dielectric properties such as the table one of the stupalith of doping under 880 ℃ of sintering temperatures.And identified different B with X-Ray 2O 3(Fig. 2 (a-d) shows mix among this embodiment 5 0.5wt%, 1.5wt%, 3.0wt% and 5.0wt%B respectively in the thing phase composite of the pottery of doping 2O 3The X-Ray diffractogram of ceramics sample), XRD result shows that they all present the Li of Nb solid solution 2TiO 3Solid solution structure.
Table 1 different B 2O 3The pottery of doping is 880 ℃ of agglomerating dielectric properties
B 2O 3Content (wt%) ε r τ f[ppm/℃] Q×f (GHz)
0.5 1.5 3.0 5.0 22.0 20.9 20.6 20.0 9.509 8.32 5.41 2.5 31964 34128 28226 24952

Claims (5)

1. low temperature sintered microwave dielectric is characterized in that its composition formula is:
Li 2+xNb 3xTi 1-4xO 3, 0＜x＜0.2 wherein;
Additive B 2O 3With Li 2+xNb 3xTi 1-4xO 3Weight ratio y:0≤y≤0.05;
Its final structure is Li 2+xNb 3xTi 1-4xO 3Solid solution structure.
2. preparation method by the described low temperature sintered microwave dielectric of claim 1 is characterized in that preparation technology may further comprise the steps:
1. with Li 2CO 3, Nb 2O 5And TiO 2By above-mentioned chemical formula Li 2+xNb 3xTi 1-4xO 3Prepare burden, add deionized water, the wet ball-milling method is mixed oven dry, the synthetic principal crystalline phase of pre-burning in the high alumina crucible of packing into;
2. the B that adds 0～5wt% in the powder after above-mentioned pre-burning 2O 3, adding alcohol, wet ball grinding oven dry granulation is pressed into binder removal behind the sequin;
3. the sequin behind the binder removal is placed on naturally cooling behind the inherent sintering of alumina crucible.
3. by the preparation method of the described a kind of low temperature sintered microwave dielectric of claim 2, it is characterized in that the pre-burning system during described step 1. is 700 ℃～900 ℃ pre-burning 5h～8h.
4. by the preparation method of claim 2 or 3 described a kind of low temperature sintered microwave dielectric, it is characterized in that the B that do not mix during step 3. 2O 3The sintering schedule of ceramics sample be 1000 ℃～1200 ℃ sintering 1～3h.
5. by the preparation method of claim 2 or 3 described a kind of low temperature sintered microwave dielectric, it is characterized in that the 3. middle doping B of step 2O 3The sintering schedule of ceramics sample be 840 ℃～950 ℃ sintering 2～5h.
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CN100575301C (en) * 2006-08-29 2009-12-30 中国科学院上海硅酸盐研究所 A kind of low sintering composite microwave medium ceramic in series of lithium, niobium and titanium and preparation method thereof
CN101538165B (en) * 2009-04-15 2013-03-13 中国科学院上海硅酸盐研究所 Method for lowering sintering temperature of lithium-niobium-titanium serial Microwave Dielectric Ceramics (MWDC)
CN101747059B (en) * 2009-12-22 2012-08-29 上海大学 Method for preparing low temperature co-fired microwave dielectric ceramic material
CN101805184A (en) * 2010-03-17 2010-08-18 上海大学 Preparation method of novel microwave dielectric ceramic material
CN113666745B (en) * 2021-09-27 2022-10-14 桂林理工大学 Microwave dielectric ceramic with ultralow sintering temperature and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1609049A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with high dielectric constant and its prepn process
CN1609050A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with medium dielectric constant and its prepn process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1609049A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with high dielectric constant and its prepn process
CN1609050A (en) * 2003-10-23 2005-04-27 浙江大学 Low temperature sintered microwave dielectric ceramic with medium dielectric constant and its prepn process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
低温烧结Li1. 05 Nb0. 55 Ti0. 55O3微波介质陶瓷及其器件. 杨启龙等.硅酸盐学报，第33卷第7期. 2005 *

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