CN100375349C - 半导体激光元件及其制造方法 - Google Patents

半导体激光元件及其制造方法 Download PDF

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Publication number
CN100375349C
CN100375349C CNB2005101202196A CN200510120219A CN100375349C CN 100375349 C CN100375349 C CN 100375349C CN B2005101202196 A CNB2005101202196 A CN B2005101202196A CN 200510120219 A CN200510120219 A CN 200510120219A CN 100375349 C CN100375349 C CN 100375349C
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waveguide area
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waveguide
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Expired - Fee Related
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English (en)
Chinese (zh)
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CN1783606A (zh
Inventor
松村拓明
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Nichia Corp
Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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  • Semiconductor Lasers (AREA)
CNB2005101202196A 2000-06-08 2001-04-25 半导体激光元件及其制造方法 Expired - Fee Related CN100375349C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000172797 2000-06-08
JP2000172797 2000-06-08
JP2001116197 2001-04-13

Related Parent Applications (1)

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CNB018108644A Division CN1251372C (zh) 2000-06-08 2001-04-25 半导体激光元件及其制造方法

Related Child Applications (1)

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CN2006100958321A Division CN1877934B (zh) 2000-06-08 2001-04-25 半导体激光元件的制造方法

Publications (2)

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CN1783606A CN1783606A (zh) 2006-06-07
CN100375349C true CN100375349C (zh) 2008-03-12

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CNB2005101202196A Expired - Fee Related CN100375349C (zh) 2000-06-08 2001-04-25 半导体激光元件及其制造方法
CN2006100958321A Expired - Fee Related CN1877934B (zh) 2000-06-08 2001-04-25 半导体激光元件的制造方法

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CN2006100958321A Expired - Fee Related CN1877934B (zh) 2000-06-08 2001-04-25 半导体激光元件的制造方法

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CN (2) CN100375349C (ru)
RU (1) RU2262171C2 (ru)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111106534B (zh) * 2019-10-30 2020-11-27 华灿光电股份有限公司 激光二极管及其制作方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06260727A (ja) * 1993-01-07 1994-09-16 Nec Corp 光半導体素子およびその製造方法
JPH07174931A (ja) * 1993-12-20 1995-07-14 Nec Corp 半導体光導波路およびその製造方法
EP0729042A1 (fr) * 1995-02-22 1996-08-28 Alcatel N.V. Guide optique segmenté pouvant notamment être inclus dans un dispositif semiconducteur
JPH08307009A (ja) * 1987-08-04 1996-11-22 Sharp Corp 半導体レーザ素子
JP2000031599A (ja) * 1998-07-14 2000-01-28 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体レーザ
JP3031415B1 (ja) * 1998-10-06 2000-04-10 日亜化学工業株式会社 窒化物半導体レーザ素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08307009A (ja) * 1987-08-04 1996-11-22 Sharp Corp 半導体レーザ素子
JPH06260727A (ja) * 1993-01-07 1994-09-16 Nec Corp 光半導体素子およびその製造方法
JPH07174931A (ja) * 1993-12-20 1995-07-14 Nec Corp 半導体光導波路およびその製造方法
EP0729042A1 (fr) * 1995-02-22 1996-08-28 Alcatel N.V. Guide optique segmenté pouvant notamment être inclus dans un dispositif semiconducteur
JP2000031599A (ja) * 1998-07-14 2000-01-28 Sony Corp 窒化物系ｉｉｉ−ｖ族化合物半導体レーザ
JP3031415B1 (ja) * 1998-10-06 2000-04-10 日亜化学工業株式会社 窒化物半導体レーザ素子

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Publication number Publication date
RU2262171C2 (ru) 2005-10-10
CN1783606A (zh) 2006-06-07
CN1877934A (zh) 2006-12-13
CN1877934B (zh) 2011-07-27

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CF01 Termination of patent right due to non-payment of annual fee