CN100374304C - Transparent pattern layer production method - Google Patents
Transparent pattern layer production method Download PDFInfo
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- CN100374304C CN100374304C CNB2005100709381A CN200510070938A CN100374304C CN 100374304 C CN100374304 C CN 100374304C CN B2005100709381 A CNB2005100709381 A CN B2005100709381A CN 200510070938 A CN200510070938 A CN 200510070938A CN 100374304 C CN100374304 C CN 100374304C
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- preparation
- pattern layer
- transparent pattern
- patterned layer
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Abstract
The present invention relates to the fabrication method of a transparent pattern layer which can be penetrated by visible light and can reflect light rays with the wave length in a specific range. The method at least orderly comprises the processes that a substrate is provided; a negative type pattern layer is formed on the substrate; the negative type pattern layer covers a first predetermination part of the surface of the substrate, and a second predetermination part of the surface of the substrate is exposed; a multi-layer film is formed so as to cover the negative type pattern layer and the second predetermination part; the negative type pattern layer and the part of the multi-player film right above the negative type pattern layer are removed.
Description
Technical field
The present invention relates to the preparation method of a kind of patterned layer (pattern layer), particularly about a kind of be penetrable to visible light, and be the preparation method of reflexible patterned layer to the light of a specific range of wavelengths.
Background technology
Visible light is penetrable and is reflexible patterned layer to the light of specific range of wavelengths, it is not to be a kind of completely new concept, for example, and the document of tw Taiwan number of patent application 93135681, promptly once utilized this kind patterned layer, with usefulness as location recognition.And because it is penetrable for visible light, so it can be applicable to the surface of the display of electronic installation, and can not influence the image that human eye is looked and wherein presented.
Please refer to Fig. 1, it is for the hand input device that document disclosed of tw Taiwan number of patent application 93135681.Hand input device 30 can be applicable in the electronic installation 40, and electronic installation 40 has a display 42, and hand input device 30 comprises a pen 32 and a patterned layer 35.
One end of pen 32 is to have a transmitter 321 and an image fetch device 323.Transmitter 321 can be launched the light 36 of a specific range of wavelengths, and image fetch device 323 then can read the image that the light 36 of this specific range of wavelengths is transmitted.The light 36 of specific range of wavelengths is meant the infrared ray of wavelength between 800～1300nm.323 of image fetch devices adopt CCD (Charged Coupled Diode, photoelectricity coupling diode) or CMOS (Complementary Metal-Oxide Semiconductor, CMOS complementary metal-oxide-semiconductor).
When the user utilizes 32 pairs of substrates of pen 34 to carry out handwriting input, the light 36 that transmitter 32 is launched can be via patterned layer 35 reflections, and image fetch device 323 can read the image of indivedual positions identification icon 351 in regular turn, this end of learning pen 32 thus on substrate 34 surfaces the diverse location of process in regular turn, and discerned the literal or the figure of user's handwriting input.Wherein, individual other location recognition pattern 351 is a two-dimensional bar (2-D barcode).
Please refer to Fig. 2, it is known patterned layer preparation method flow chart.As shown in Figure 2, want pattern-making layer 35, the way of known technology is to use photoetching process substantially, in the film forming step (401) of patterned layer 35 original materials afterwards, the common program in photoresistance (402), exposure (403), (404), etching (405) and the removing photoresistance photoetching processes such as (406) of developing that is of then carrying out has formed this original material predetermined patterned layer 35, needs six road steps haply altogether, and need the use of mask unavoidably, so cost takes the not corner of the eyes.
Except the higher shortcoming of cost, known patterned layer 35 preparation methods as shown in Figure 2 more have another shortcoming: when carrying out etching program (405), because the original material of patterned layer 35 is the TiO of high index of refraction
2(or Mb
2O
5) with the SiO of low-refraction
2The multilayer film that mutual storehouse forms, desire the such multilayer film of etching, then etching program (405) adopts the etching solution based on NaOH usually, yet the inventor of this case finds, soaked after this kind etching solution, the patterned layer of finishing 35 can have easily to be peeled off the phenomenon that comes off from substrate 34 and produces, and this may be that etching solution causes patterned layer 35 to die down with the stress that combines between the substrate 34.In this case, known technology is the problem with reliability deficiency of patterned layer 35.
Summary of the invention
Main purpose of the present invention is to provide a kind of preparation method of transparent pattern layer.
Preparation method provided by the present invention comprises at least in regular turn: 1, a substrate is provided; 2, form a minus patterned layer on this substrate, this minus patterned layer covers one first predetermined portions of this substrate surface, and exposes one second predetermined portions of this substrate surface to the open air; 3, form a multilayer film to cover this minus patterned layer and this second predetermined portions; And 4, remove the multilayer film of this minus patterned layer and the part directly over it.
The present invention also provides about the formation method of this minus patterned layer, the formation method of this multilayer film and the various embodiments of method that remove the multilayer film of this minus patterned layer and the part directly over it, and relevant applicable enforcement material.And consider the subsequent applications problem of patterned layer provided by the present invention, for example use the relevant considerations when giving hand input device, so the present invention also provides the embodiment of the surface roughening of patterned layer.So that the present invention more meets the demand of various backend application.
Method provided by the present invention has been avoided the use of the photoetching process of known technology, therefore, can reduce the expense because of the required mask of photoetching process significantly, and make cost of manufacture decline to a great extent.And because or else need not use etching solution based on NaOH, so the present invention has improved the problem that patterned layer easily comes off from strippable substrate in the known technology.
Description of drawings
Fig. 1 is the hand input device that document disclosed of tw Taiwan number of patent application 93135681.
Fig. 2 is known patterned layer preparation method flow chart.
Fig. 3 A to Fig. 3 C shows the transparent patterned layer preparation method schematic diagram of the present invention.
Fig. 4 A to Fig. 4 E shows another embodiment schematic diagram of preparation method of the present invention.
Second predetermined portions, 512 resin slurries 60
Minus patterned layer 61 multilayer films 63
Low-index film 638 high refractive index layers 639
Patterned layer 65 wire mark templates 70
The specific embodiment
Please refer to Fig. 3 A to Fig. 3 C, Fig. 3 A to Fig. 3 C shows the transparent patterned layer preparation method schematic diagram of the present invention.The present invention provides a kind of preparation method of patterned layer 65, and 65 pairs of visible lights of patterned layer are penetrable, and to the light of a specific range of wavelengths for reflecting.Visible light is meant that substantially wavelength is the light of 400nm to 750nm, and the light of above-mentioned specific range of wavelengths is the infrared ray of wavelength between 800～1300nm.
By Fig. 3 A, a substrate 51 is at first to be provided.Substrate 51 can adopt materials such as glass or heat resistant plastice.Then then form a minus patterned layer (anti-pattern layer) 61 on substrate 51, one first predetermined portions 511 on minus patterned layer 61 covered substrates 51 surfaces, and expose one second predetermined portions 512 on substrate 51 surfaces to the open air.
Among the embodiment that Fig. 3 A shows, the formation method of minus patterned layer 61 is a wire mark step.Wherein the material of minus patterned layer 61 is a resin slurry 60.Above-mentioned wire mark step can comprise in regular turn: 1, wire mark template (mask) 70 be set on substrate 51, wire mark template 70 is to have and minus patterned layer 61 corresponding at least one mesh 701; 2, wire mark template 70 is carried out the coating of resin slurry 60; 3, carry out a drying program, utilize high temperature to remove at least one organic solvent in the resin slurry 60; 4, remove wire mark template 70.
Wherein, the embodiment of resin slurry 60 can be full-bodied Polymer Solution, and above-mentioned this organic solvent then may be ethers or ester class.The high temperature of above-mentioned this drying program is substantially 120 degree Celsius to 180 degree among embodiments of the invention.
By Fig. 3 B, after minus patterned layer 61 had formed, the step that continues was for forming a multilayer film 63 to cover the minus patterned layer 61 and second predetermined portions 512.Wherein, multilayer film 63 is to form (shown in Fig. 3 C) by a low- index film 638 and 639 mutual storehouses of a high refractive index layer.To reach visible light is penetrable, and is reflexible effect to infrared light.
In various embodiment of the present invention, the enforcement material of low-index film can be SiO
2And the enforcement material of high refractive index layer can be TiO
2Or Mb
2O
5Can utilize sputter (sputtering) or coating modes such as (coating) to form multilayer film 63.The number of plies of multilayer film 63 can be between 3～10 layers; And the thickness of multilayer film 63 is substantially between 200nm～1500nm.
Please refer to Fig. 3 B and Fig. 3 C, after multilayer film 63 had formed, then removable minus patterned layer 61 was with the multilayer film 63 of part directly over the minus patterned layer 61.Thus, the multilayer film 63 that remains on the substrate 51 is patterned layer 65 provided by the present invention.
This step be utilize between minus patterned layer 61 and the substrate 51 combine stress a little less than, and combine the stronger principle of stress between multilayer film 63 and the substrate 51, can directly the minus patterned layer 61 of first predetermined portions, 511 tops of substrate 51 be peeled off with the multilayer film 63 of part by the mode of physics.The mode of peeling off is for example utilized a stickiness roller, with when rolling across multilayer film 63 (Fig. 3 B) upper surface, minus patterned layer 61 and the part multilayer film 63 directly over it is sticked, directly to separate with substrate 51.
Because the present invention is among the process that forms patterned layer 65, need not use the photoetching process of known technology, particularly need not use the etching solution based on NaOH, therefore, the patterned layer of finishing 65 has not had in the known technology really peels off the problem that comes off from substrate 51 easily.Patterned layer 65 with preparation method gained provided by the present invention has quite high reliability.
Please refer to Fig. 4 A to Fig. 4 E, Fig. 4 A to Fig. 4 E shows another embodiment schematic diagram of preparation method of the present invention.Fig. 4 A utilizes the wire mark step to form minus patterned layer 61, and method is similar to the implementation of Fig. 3 A, repeats no more in this.Then show the multilayer film 63 formation methods that are similar to shown in Fig. 3 B at Fig. 4 D, before Fig. 4 D forms the step of multilayer film 61, present embodiment is that a roughening program is carried out on substrate 51 surfaces, has comprised a grit blast procedure (being shown in Fig. 4 B), and a cleaning procedure (being shown in Fig. 4 C).
Therefore and many tiny potholes of being returned out as Fig. 4 B, grit blast procedure is to utilize a sand material 80 with bump substrate 51 surfaces, and as shown in the figure, second predetermined portions 512 of substrate 51 and becomes coarse surface.Afterwards, then carry out cleaning procedure, residue in sand material 80 on the substrate 51 with cleaning, shown in Fig. 4 C.Thus, shown in Fig. 4 E, the patterned layer 65 that is formed at second predetermined portions, 512 surfaces also has the effect of roughening, so it is when reflected infrared ray, and the direction of reflection can be not limited to single direction, but and scattered reflection.Thus, when patterned layer 65 provided by the present invention desires to be applied to the hand input device that document disclosed of tw Taiwan number of patent application 93135681 for example, can make that more hand input device can operate smoothly.
About making patterned layer 65 surface roughenings, and reach the embodiment of scattered reflection effect, other has an embodiment, please refer to Fig. 3 A, it can be before minus patterned layer 51 forms, substrate 51 is carried out the program of roughening, follow-up preparation method about patterned layer 65 is then shown in Fig. 3 A to Fig. 3 C in advance.
Comprehensive the above, the present invention system provides a kind of preparation method of transparent patterned layer, this patterned layer for example can be applicable among the hand input device.In the method provided by the present invention, avoided the use of the photoetching process of known technology, therefore, can reduce expense significantly, and make cost of manufacture decline to a great extent because of the required mask of photoetching process.And because or else need not use etching solution based on NaOH, so the present invention has improved the problem that patterned layer easily comes off from strippable substrate in the known technology.Generally speaking, the present invention system provides a kind of preparation method of patterned layer, and has advantage low-cost and high-reliability.
The above specific embodiment only is used to illustrate the present invention, but not is used to limit the present invention.
Claims (15)
1. the preparation method of a transparent pattern layer, this patterned layer is penetrable to visible light, and to the light of a specific range of wavelengths for reflecting, it is characterized in that this method comprises the following steps: at least in regular turn
One substrate is provided;
Form a minus patterned layer on substrate by the wire mark step, one first predetermined portions on this minus patterned layer covered substrate surface, and expose one second predetermined portions of substrate surface to the open air;
Form a multilayer film to cover the minus patterned layer and second predetermined portions; And
With the minus patterned layer from strippable substrate to remove the multilayer film of minus patterned layer and the part directly over it.
2. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, described multilayer film is to be formed by the mutual storehouse of a low-index film and high refractive index layer institute.
3. the preparation method of transparent pattern layer as claimed in claim 2 is characterized in that, described high refractive index layer is TiO
2Or Mb
2O
5
4. the preparation method of transparent pattern layer as claimed in claim 2 is characterized in that, described low-index film is SiO
2
5. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, the number of plies of described multilayer film is between 3～10 layers.
6. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, the thickness of described multilayer film is between 200nm～1500nm.
7. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, the formation method of described multilayer film is sputter or coating.
8. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, wherein before the step that forms described multilayer film, more comprises:
Described substrate surface is carried out a roughening program.
9. want the preparation method of 8 described transparent pattern layers as right, it is characterized in that, described roughening program comprises:
One grit blast procedure, it is to utilize a sand material with the bump substrate surface; And
One cleaning procedure residues in sand material on the substrate with cleaning.
10. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, the material of described minus patterned layer is a resin slurry.
11. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, described wire mark step comprises:
One wire mark template is set on substrate, this wire mark template is to have and the corresponding at least one mesh of minus patterned layer; And
This wire mark template is carried out the coating of a resin slurry.
12. the preparation method of transparent pattern layer as claimed in claim 11 is characterized in that, described wire mark step more comprises:
Carry out a drying program, utilize high temperature to remove at least one organic solvent in the resin slurry.
13. the preparation method of transparent pattern layer as claimed in claim 12 is characterized in that, described wire mark step more comprises:
Remove this wire mark template.
14. the preparation method of transparent pattern layer as claimed in claim 1, it is characterized in that, described with the method for minus patterned layer from strippable substrate, for utilizing a stickiness roller, with when rolling across the multilayer film upper surface, the multilayer film of minus patterned layer and the part directly over it is sticked, to separate with substrate.
15. the preparation method of transparent pattern layer as claimed in claim 1 is characterized in that, the light of described specific range of wavelengths is the infrared ray of wavelength between 800～1300nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100709381A CN100374304C (en) | 2005-05-18 | 2005-05-18 | Transparent pattern layer production method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100709381A CN100374304C (en) | 2005-05-18 | 2005-05-18 | Transparent pattern layer production method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1865016A CN1865016A (en) | 2006-11-22 |
| CN100374304C true CN100374304C (en) | 2008-03-12 |
Family
ID=37424215
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100709381A Expired - Fee Related CN100374304C (en) | 2005-05-18 | 2005-05-18 | Transparent pattern layer production method |
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| Country | Link |
|---|---|
| CN (1) | CN100374304C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010025044B4 (en) * | 2010-06-22 | 2016-01-07 | Bundesdruckerei Gmbh | Method and device for producing a security document with colored perforations |
| JP6678430B2 (en) * | 2015-11-06 | 2020-04-08 | 株式会社Ｎｂｃメッシュテック | Method of forming thin film thin line pattern by screen printing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0721354A (en) * | 1993-07-02 | 1995-01-24 | Fuji Xerox Co Ltd | Image input/output device |
| JPH10272825A (en) * | 1997-03-31 | 1998-10-13 | Riso Kagaku Corp | Image forming sheet and method for forming image |
| CN1400939A (en) * | 2000-02-11 | 2003-03-05 | 丹格乐斯技术有限公司 | Antireflective UV blocking multilayer coatings wherin film has cerium oxide |
| JP2004212717A (en) * | 2003-01-06 | 2004-07-29 | Seiko Epson Corp | Electro-optical device with input device, and electronic apparatus |
-
2005
- 2005-05-18 CN CNB2005100709381A patent/CN100374304C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0721354A (en) * | 1993-07-02 | 1995-01-24 | Fuji Xerox Co Ltd | Image input/output device |
| JPH10272825A (en) * | 1997-03-31 | 1998-10-13 | Riso Kagaku Corp | Image forming sheet and method for forming image |
| CN1400939A (en) * | 2000-02-11 | 2003-03-05 | 丹格乐斯技术有限公司 | Antireflective UV blocking multilayer coatings wherin film has cerium oxide |
| JP2004212717A (en) * | 2003-01-06 | 2004-07-29 | Seiko Epson Corp | Electro-optical device with input device, and electronic apparatus |
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| Publication number | Publication date |
|---|---|
| CN1865016A (en) | 2006-11-22 |
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