CN100373434C - Pixel structure and its driving method and display using said pixel structure - Google Patents
Pixel structure and its driving method and display using said pixel structure Download PDFInfo
- Publication number
- CN100373434C CN100373434C CNB2004100698734A CN200410069873A CN100373434C CN 100373434 C CN100373434 C CN 100373434C CN B2004100698734 A CNB2004100698734 A CN B2004100698734A CN 200410069873 A CN200410069873 A CN 200410069873A CN 100373434 C CN100373434 C CN 100373434C
- Authority
- CN
- China
- Prior art keywords
- threshold voltage
- switching device
- node
- device shifter
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The present invention relates to a pixel structure which comprises a light emitting assembly, a driving transistor, a holding capacitor, a switching device and a control device, wherein the driving transistor is connected with the light emitting assembly in series to drive the light emitting assembly to emit light; the driving transistor is provided with a threshold voltage and a grid electrode which is connected to a node; the first end of the holding capacitor is connected to the node; the switching device is connected between a data line and the node, and is conducted by a scanning signal; the control device is connected to the second end of the holding capacitor to supply a first control voltage relevant to the threshold voltage to pass through the holding capacitor to the node when the switching device is conducted. The present invention also discloses a driving method of the pixel structure, and a display which applies the pixel structure.
Description
Technical field
The present invention is relevant for a kind of display, particularly relevant for the dot structure in the display.
Background technology
Be used to manufacture thin film transistor (TFT) (the Thin Film Transistor of flat-panel screens at present; TFT) have two kinds, a kind of is amorphous silicon (amorphous silicon; A-Si) TFT, a kind of is low temperature polycrystalline silicon (Low Temperature Poly Silicon; LTPS) TFT.Because the carrier mobility of LTPS TFT is high 100 times than the carrier mobility of a-Si TFT, can export enough electric currents, allows organic light emitting display can produce enough brightness.If be used for active organic luminuous display with a-SiTFT, the current value that it produced is not enough, produces higher current value if strengthen voltage, can cause the problem of accelerated deterioration again.So normal selected development platform of LTPS TFT as active organic luminuous display.
As shown in Figure 1, in the active organic luminuous display of routine, it utilizes plural LTPSTFT to form a pixel PIX.Transistor T 1 series connection light emitting diode D is in power supply V
DdWith V
SsBetween.The grid of transistor T 2 receives one scan signal V via sweep trace
Scan, its drain electrode receives a data-signal V via data line
DataAs sweep signal V
ScanWhen making transistor T 2 conductings, the data-signal V of pixel PIX
DataJust can be sent to the grid of transistor T 1.If pixel PIX is essential luminous, then data-signal V
DataCurrent potential will make transistor T 1 conducting, and produce an electric current of flowing through transistor T 1, make light emitting diode D luminous; Keep storage one of capacitor C two ends and the corresponding voltage V of this electric current simultaneously
GsAs sweep signal V
ScanWhen transistor T 2 is ended, still keep a voltage difference V owing to keep the capacitor C two ends
Gs, make transistor T 1 still can continue to produce drive current and make light emitting diode D luminous.
But in the manufacture process of LTPS TFT, need be through the step of one laser crystallization.Because the width of laser is limited, can't once scan the TFT of all pixels simultaneously, therefore need pass through laser crystallization step repeatedly, can the TFT of all pixels is once scanned.
But the intensity of each laser can't be identical, and therefore when diverse location was crossed in laser scanning, the laser energy that receives will be different, and then the TFT that makes different time be irradiated to has different threshold voltage (threshold vol tage).The threshold voltage V of transistor T 1 in each pixel
Tp1When drift phenomenon takes place, make and the luminous electric current difference of driven for emitting lights diode D in each pixel also cause different brightness that therefore, it is very difficult that sort circuit desires to produce the display panel of uniformly light-emitting.
In addition, each pixel all is connected to power lead in order to receive power supply V
Dd, when the length of power lead was longer, its dead resistance was also just big.Therefore feasible brighter near the pixel of power end, and the pixel far away that heals is darker.
Summary of the invention
In view of this, the brightness that reduces organic light emitting display of fundamental purpose of the present invention system is subjected to the dead resistance institute effect of threshold voltage and the power lead of LTPS TFT.
In order to achieve the above object, the invention provides a kind of dot structure, comprise that a luminescence component, a driving transistors, keep electric capacity, a switching device shifter and a control device.Driving transistors is connected with luminescence component, and is luminous in order to the driven for emitting lights assembly, and has a threshold voltage, and a grid is connected to a node.First end of keeping electric capacity is connected to node.Switching device shifter is connected between data line and the node, is subjected to sweep signal and conducting.Control device is connected to second end of keeping electric capacity.When switching device shifter is not switched on, provide the first control voltage relevant, by keeping electric capacity to node with threshold voltage.
The present invention also provides a kind of display, comprises one scan driver, a data driver and a display panel.Scanner driver output scanning signal is to the multi-strip scanning line.The data driver outputting data signals is to many data lines.Display panel has a plurality of pixels, with matrix-style configuration, each pixel, comprises that a luminescence component, a driving transistors, keep electric capacity, a switching device shifter and a control device.Driving transistors is connected with luminescence component, and is luminous in order to the driven for emitting lights assembly, and has a threshold voltage, and a grid is connected to a node.First end of keeping electric capacity is connected to node.Switching device shifter is connected between corresponding data line and the node, is subjected to the sweep signal of corresponding scanning line and conducting.Control device is connected to second end of keeping electric capacity.When switching device shifter is not switched on, in order to the first control voltage relevant with threshold voltage to be provided, by keeping electric capacity to node.
The present invention also provides a kind of driving method, in order to drive the luminescence component in the pixel.At first, provide driving transistors series connection luminescence component, luminous in order to the driven for emitting lights assembly, driving transistors has a threshold voltage, and a grid is connected to a node.When pixel is not selected, then provide relevant with threshold voltage first to control voltage to node.When pixel is selected, then provide with threshold voltage irrelevant second control voltage to node.
For allow of the present invention should and other purpose, feature and advantage can become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below.
Description of drawings
Fig. 1 represents conventional dot structure.
Fig. 2 represents the calcspar of announcer of the present invention inside.
Fig. 3 represents dot structure first embodiment of the present invention.
Fig. 4 represents dot structure second embodiment of the present invention.
Fig. 5 represents dot structure the 3rd embodiment of the present invention.
Fig. 6 represents dot structure the 4th embodiment of the present invention.
Fig. 7 represents driving method process flow diagram of the present invention.
Symbol description
PIX, P
11-P
Nm: pixel; T1, T2: transistor;
D: light emitting diode; C: keep electric capacity;
10: display; 12: data driver;
14: scanner driver; 16: display panel;
S
1-S
n: sweep trace; D
1-D
m: data line;
30: luminescence component; TP
1: driving transistors;
32: switching device shifter; 34: control device;
36: setting device; PL
1-PL
4: power lead;
342,344: switch; TP
2: the MOS diode.
Embodiment
Fig. 2 represents the calcspar of display interior of the present invention.Display 10 has a data driver 12, one scan driver 14 and a display panel 16.Data driver 12 is in order to provide data-signal to data line D
1-D
mScanner driver 14 arrives sweep trace S in order to sweep signal to be provided
1-S
nDisplay panel 16 has the pixel P with the matrix-style configuration
11-P
Nm
Pixel P
11-P
NmReceive corresponding data-signal and sweep signal separately.For example: sweep trace S
1And data line D
1Controllable pixels P
11By sweep trace S
1-S
nCan conducting or by with all pixels in the delegation, with control data line D
1-D
mWhether can be written in the corresponding pixel.
Because pixel P
11-P
NmStructure all identical, therefore, below will be with pixel P
11Be example, be illustrated principle of work of the present invention.Fig. 3 represents dot structure first embodiment of the present invention.As shown in the figure, pixel P
11Comprise: luminescence component 30, driving transistors TP
1, keep capacitor C, switching device shifter 32 and control device 34.
Wherein, switch 342 is by sweep trace S
1On sweep signal control, therefore, when switching device shifter 32 conductings, this also conducting of switch 342.And switch 344 is controlled by the control signal on the control line CL.
In the present embodiment, not conducting simultaneously of switch 342 and 344.Therefore when switch 342 and 344 is N type or P type thin film transistor (TFT) and constitutes, then control signal on the control line CL and sweep trace S
1On sweep signal inversion signal each other, in order to avoid switch 342 and 344 conductings simultaneously.When switch 342 and 344 was not the thin film transistor (TFT) of same type, then the control signal on the control line CL equaled sweep trace S
1On sweep signal.
Suppose that the control signal of control line CL is sweep trace S
1The inversion signal of sweep signal.When switching device shifter 32 is scanned line S
1The sweep signal conducting time, the voltage V of node A then
AEqual data line D
1Data-signal V
DataBecause switching device shifter 32 is switched on, so switch 342 also can conducting, makes the voltage V of Node B
B=V
Ref1-V
Tp2Therefore, keep the voltage V of capacitor C
CBe shown below:
V
c＝V
data-(V
ref1-V
tp2) (1)
When switching device shifter 32 is not scanned line S
1On the sweep signal conducting time, then switch 342 ends, and therefore switch 344 conductings, keep the voltage V of capacitor C
CBe shown below:
V
c＝V
A-V
dd (2)
Because the charge conservation characteristic of electric capacity, therefore (1) approximates (2).With (2) substitution (1), can get
V
A-V
dd＝V
data-(V
ref1-V
tp2) (3)
V
A=V
data-(V
ref1-V
tp2)+V
dd (4)
Driving transistors TP
1The drive current I that is provided is shown below
I∝(V
gs-V
tp1)
2
∝[(V
A-V
dd)-V
tp1]
2 (5)
With (3) substitution (5)
I∝(V
data-V
ref1+V
tp2-V
tp1)
2 (6)
By (6) as can be known, utilize dot structure of the present invention, can make the drive current I of luminescence component 30 not be subjected to power supply V
DdInfluence.Because the transistor position each other in the pixel is very approaching, thus its threshold voltage be bordering on equal, so make V
Tp1=V
Tp2, then drive current I also is not subjected to driving transistors TP
1Threshold voltage V
Tp1Control.Therefore, display is no longer because of the driving transistors TP in each pixel
1Threshold voltage V
Tp1Difference, and the situation of the luminescence component brightness disproportionation between each pixel takes place.
Since the MOS diode can only folk prescription to conducting, when data (data) writes fashionablely, if when the value that the value of last one group of data is desired to write than this group data is greater, the MOS diode can't conducting and is provided electric charge to keeping electric capacity, therefore, add a setting device 36 in node A and power lead PL
4Between, before data writes, the voltage of node A is pulled to low-voltage, make and write fashionablely at data, all be in the operation of doing charging for keeping electric capacity.Wherein, in the present embodiment, power lead PL
4Power supply V
Ref2Equal power lead PL
2Power supply V
Ss
As shown in Figure 3, be scanned line S when control device 34
1On the sweep signal conducting time, switch 342 conductings make the voltage V of Node B
B=V
Ref1-V
Tp2When control device 34 is not scanned line S
1On the sweep signal conducting time, so switch 344 conductings are the voltage V of Node B
B=V
DdFrom the above, voltage V
BVariation and MOS diode TP
2Threshold voltage V
Tp2Relevant.According to the principle of charge conservation of keeping capacitor C, voltage V
BVariation approximate voltage V
AVariation, therefore, the change in voltage of node A also with MOS diode TP
2Threshold voltage V
Tp2Relevant.
Because it is equal that the transistorized threshold voltage in the pixel is bordering on, and therefore, can make V
Tp1=V
Tp2, in other words, the change in voltage of node A and driving transistors TP
1Threshold voltage V
Tp1Also relevant.
Fig. 4 represents dot structure second embodiment of the present invention.Different with Fig. 3 being in, the MOS diode TP of control device 34
2Be series at switch 344 and power lead PL
1Between.The principle of operation of second embodiment is with first embodiment.Because power lead PL of the present invention
3On power supply V
Ref1Less than power lead PL
1On power supply V
Dd, therefore, when switch 344 conductings, can utilize MOS diode TP
2The voltage of Node B is lived in strangulation.
Because it is fashionable that this embodiment writes at data, second end points of keeping electric capacity is to reference voltage V via switch 342 conductings
Ref1, can be to keeping capacitor charge and discharge, can only be to keeping the electric capacity charging, so can save the setting device 36 among first embodiment unlike first embodiment because have through the MOS diode.
When switching device shifter 32 is scanned line S
1On the sweep signal conducting time, so switch 342 conductings are the voltage V of Node B
B=V
Ref1When switching device shifter 32 is not scanned line S
1On the sweep signal conducting time, switch 344 conductings, so the voltage V of Node B
B=V
Dd+ V
Tp2According to the principle of charge conservation of keeping capacitor C, the change in voltage of Node B approximates the change in voltage of node A.
At switching device shifter 32 not during conducting, the threshold voltage V of the voltage of Node B and MOS diode TP2
Tp2Relevant, therefore, the voltage of node A and V
Tp2Relevant.Because pixel P
11Transistor the position is very approaching each other, so its threshold voltage be bordering on equal, so make V
Tp2=V
Tp1So, the voltage of node A and driving transistors TP
1Threshold voltage V
Tp1Also relevant.
Conversion between P type assembly and the N type assembly is by the people in the industry is familiar with, equally also applicable to structure of the present invention.Fig. 5 and Fig. 6 correspond to Fig. 3 and Fig. 4 respectively for utilization N type dot structure of the present invention.
Can avoid the drive current of luminescence component significantly to be subjected to power supply V for proving dot structure of the present invention
DdThe threshold voltage that reaches driving transistors influences, and therefore, the dot structure of the present invention of conventional dot structure shown in Figure 1 and Fig. 4 is done an emulation relatively.
Make the power supply V among Fig. 1
Dd=5V, and V
Ss=-12V, the threshold voltage V of transistor T 1
Tp1=-1V, the data-signal V of online data
Data=1.195V.And the power supply V among Fig. 4
Dd=5V, V
Ss=-12V, V
Ref1=3V, driving transistors TP
1Threshold voltage V
Tp=-1V produces the drive current identical with Fig. 1 in order to make Fig. 4, therefore, and the data line D of Fig. 4
1On data-signal V
DataBe set at 0V.
MOS diode TP in Fig. 4
2Threshold voltage equal driving transistors TP
1Threshold voltage the time, can get the result of following table.
| The routine techniques drive current | Drive current of the present invention | |
| V tp1＝-1V；V dd＝5V | I≈1.2×10 -7A | I≈1.2×10 -7A |
| V tp1＝-0.5V；V dd＝5V | I≈2.28×10 -7A | I≈1.33×10 -7A |
| V tp1＝-1V；V dd＝5.5V | I≈2.3×10 -7A | I≈1.35×10 -7A |
As threshold voltage V
Tp1During change, the variance rate of conventional drive current is about
And the present invention is 10.8%.As power supply V
DdDuring change, the variance rate of conventional drive current is about 91.7%, and the present invention is 12.5%.From the above, when transistorized threshold voltage or power supply change, can't significantly change driving current value of the present invention.
Fig. 7 represents driving method process flow diagram of the present invention.Please refer to Fig. 3, below utilize the dot structure of Fig. 3, driving method of the present invention is described.At first, provide a driving transistors TP
1Connect and high-voltage level V with luminescence component 30
DdWith low voltage level V
SsBetween, in order to provide luminescence component 30 required drive current I.Driving transistors TP
1Has a threshold voltage V
Tp1Then, for the voltage of Node B is lived in strangulation, therefore, utilize setting device 36 to set the voltage (S110) of node A.
Judge pixel P again
11Whether selected (S120).As pixel P
11When not selected (S130), then switching device shifter 32 is cut off.By (4) formula as can be known, the voltage V of node A
AWith MOS diode TP
2Threshold voltage V
Tp2Relevant, just with driving transistors TP
1Threshold voltage V
Tp1Relevant, and, by (4) formula as can be known, the voltage V of node A
AWith high-voltage level V
DdAlso relevant.As pixel P
11When selected (S140), then switching device shifter 32 conductings.The voltage V of node A
AEqual data line D
1Data-signal V
Data, with driving transistors TP
1Threshold voltage V
Tp1Irrelevant.
Because driving transistors TP
1Grid voltage be not to immobilize, therefore, utilize the voltage V of node A
AChange, can reduce driving transistors TP
1The drive current I that is provided is subjected to high-voltage level V
DdInstitute's effect.In addition, as pixel P
11When not selected, the voltage of node A and driving transistors TP
1Threshold voltage V
Tp1Relevant, therefore, can reduce driving transistors TP, the drive current I that is provided is subjected to the threshold voltage institute effect of itself.
In sum, compared to routine techniques, the present invention has following some advantage:
One, utilize to change the grid voltage of driving transistors, the brightness that can reduce the luminescence component in the pixel be subjected to pixel and power end apart from institute's effect.
Two, because the grid that control voltage to driving transistors relevant with the threshold voltage of driving transistors is provided, therefore, reduce the threshold voltage institute effect that the interior luminescence component of pixel is subjected to driving transistors.
In sum; though the present invention with a preferred embodiment openly as above; right its is not in order to limit the present invention; any those skilled in the art; under the situation that does not break away from the spirit and scope of the present invention; can carry out various changes and modification, so protection scope of the present invention is as the criterion when looking the claim restricted portion that is proposed.
Claims (16)
1. dot structure comprises:
One luminescence component;
One driving transistors is connected with this luminescence component, and luminous in order to drive this luminescence component, this driving transistors has a threshold voltage, and a grid is connected to a node;
One keeps electric capacity, has one first end and one second end, and this first end is connected to this node;
One switching device shifter is connected between a data line and this node, is subjected to the one scan signal and conducting; And
One control device is connected to this second end that this keeps electric capacity, according to this sweep signal, the one first control voltage relevant with threshold voltage is provided respectively or keeps second end of electric capacity with the second control voltage that threshold voltage has nothing to do to this.
2. dot structure as claimed in claim 1, wherein, this luminescence component comprises an Organic Light Emitting Diode at least.
3. dot structure as claimed in claim 1, wherein, the first control voltage that should be relevant with threshold voltage is also relevant with a power supply, and this power supply connects the source electrode of this driving transistors.
4. dot structure as claimed in claim 1, wherein, when this switching device shifter is switched on, provide this first control voltage relevant to this second end with threshold voltage, and, when this switching device shifter is not switched on, provide the second irrelevant control voltage of this and threshold voltage to this second end.
5. dot structure as claimed in claim 4 also comprises, a setting device before this switching device shifter conducting, is set the current potential of this node.
6. dot structure as claimed in claim 1, when this switching device shifter is not switched on, provide this first control voltage relevant to this second end with threshold voltage, and, when this switching device shifter is switched on, provide the second control voltage that has nothing to do with this threshold voltage to this second end.
7. display comprises:
The one scan driver, in order to the output scanning signal to the multi-strip scanning line;
One data driver arrives many data lines in order to outputting data signals; And
One display panel, this panel comprises a plurality of pixels, with the matrix-style configuration, each pixel comprises:
One luminescence component;
One driving transistors is connected with this luminescence component, and is luminous in order to drive this luminescence component, have a threshold voltage, and a grid is connected to a node;
One keeps electric capacity, has one first end and one second end, and this first end is connected to this node;
One switching device shifter is connected between corresponding data line and this node, is subjected to the sweep signal of corresponding scanning line and conducting; And
One control device is connected to this second end that this keeps electric capacity, according to this sweep signal, the one first control voltage relevant with threshold voltage is provided respectively or keeps second end of electric capacity with the second control voltage that threshold voltage has nothing to do to this.
8. display as claimed in claim 7, wherein, when this switching device shifter is switched on, provide this first control voltage relevant to this second end with threshold voltage, and, when this switching device shifter is not switched on, provide the second control voltage that has nothing to do with this threshold voltage to this second end.
9. display as claimed in claim 8, wherein, this control device comprises:
One first switch; And
One MOS diode, and this first switch series is coupled between this second end and one first reference power line, when this switching device shifter conducting, and this first switch conduction.
10. display as claimed in claim 9, wherein, this control device also comprises: a second switch, be connected between this second end and one first power lead, when this switching device shifter not during conducting, this second switch conducting.
11. display as claimed in claim 10, wherein, this MOS diode be a P type thin film transistor (TFT) and N type thin film transistor (TFT) one of them.
12. display as claimed in claim 8 also comprises, a setting device before this switching device shifter conducting, is set the current potential of this node.
13. display as claimed in claim 7, when this switching device shifter is not switched on, provide this first control voltage relevant to this second end with threshold voltage, and, when this switching device shifter is switched on, provide the second irrelevant control voltage of this and threshold voltage to this second end.
14. display as claimed in claim 13, wherein, this control device comprises:
One first switch; And
One MOS diode, and this first switch series is coupled between this second end and one first power lead, when this switching device shifter not during conducting, this first switch conduction.
15. display as claimed in claim 14, wherein, this control device also comprises: a second switch, be connected between this second end and one first reference power line, and when this switching device shifter conducting, this second switch conducting.
16. display as claimed in claim 15, wherein, this MOS diode be a P type thin film transistor (TFT) and N type thin film transistor (TFT) one of them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100698734A CN100373434C (en) | 2004-07-13 | 2004-07-13 | Pixel structure and its driving method and display using said pixel structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100698734A CN100373434C (en) | 2004-07-13 | 2004-07-13 | Pixel structure and its driving method and display using said pixel structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588516A CN1588516A (en) | 2005-03-02 |
| CN100373434C true CN100373434C (en) | 2008-03-05 |
Family
ID=34604388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100698734A Active CN100373434C (en) | 2004-07-13 | 2004-07-13 | Pixel structure and its driving method and display using said pixel structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100373434C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100454373C (en) * | 2005-03-11 | 2009-01-21 | 三洋电机株式会社 | Active matrix type display device |
| JP2006251454A (en) * | 2005-03-11 | 2006-09-21 | Sanyo Electric Co Ltd | Active matrix type display device and method for driving the same |
| CN100353402C (en) * | 2005-05-09 | 2007-12-05 | 友达光电股份有限公司 | Display unit |
| TWI271868B (en) | 2005-07-08 | 2007-01-21 | Au Optronics Corp | A pixel circuit of the display panel |
| CN100353394C (en) * | 2005-08-10 | 2007-12-05 | 友达光电股份有限公司 | Pixel circuit of display |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246180B1 (en) * | 1999-01-29 | 2001-06-12 | Nec Corporation | Organic el display device having an improved image quality |
| US20040041750A1 (en) * | 2001-08-29 | 2004-03-04 | Katsumi Abe | Current load device and method for driving the same |
| CN1487486A (en) * | 2002-08-30 | 2004-04-07 | 精工爱普生株式会社 | Electronic circuit and driving method electro-optical apparatus and driving method and electronic equipment |
| CN1490779A (en) * | 2002-06-11 | 2004-04-21 | ����Sdi��ʽ���� | Luminous display device, luminous display board and driving method thereof |
| US20040100430A1 (en) * | 2002-11-22 | 2004-05-27 | Norbert Fruehauf | Active matrix drive circuit |
-
2004
- 2004-07-13 CN CNB2004100698734A patent/CN100373434C/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246180B1 (en) * | 1999-01-29 | 2001-06-12 | Nec Corporation | Organic el display device having an improved image quality |
| US20040041750A1 (en) * | 2001-08-29 | 2004-03-04 | Katsumi Abe | Current load device and method for driving the same |
| CN1490779A (en) * | 2002-06-11 | 2004-04-21 | ����Sdi��ʽ���� | Luminous display device, luminous display board and driving method thereof |
| CN1487486A (en) * | 2002-08-30 | 2004-04-07 | 精工爱普生株式会社 | Electronic circuit and driving method electro-optical apparatus and driving method and electronic equipment |
| US20040100430A1 (en) * | 2002-11-22 | 2004-05-27 | Norbert Fruehauf | Active matrix drive circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1588516A (en) | 2005-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11244614B2 (en) | Pixel driver circuit, display device and pixel driving method | |
| CN102646386B (en) | Pixel unit circuit, pixel array, panel and panel driving method | |
| US11551606B2 (en) | LED driving circuit, display panel, and pixel driving device | |
| CN102655145B (en) | Static releasing protection circuit and working method thereof | |
| CN104637445B (en) | AMOLED pixel-driving circuit and image element driving method | |
| US10748489B2 (en) | Pixel driving circuit and driving method thereof, and display apparatus | |
| CN102023667A (en) | Regulator and organic light emitting diode display using the same | |
| CN103198793A (en) | Pixel circuit, drive method and display device thereof | |
| EP3208794B1 (en) | Driver device, driving method, and display device | |
| CN106782322A (en) | AMOLED pixel-driving circuits and AMOLED image element driving methods | |
| CN104637446A (en) | Pixel circuit and driving method thereof and display device | |
| CN102693696B (en) | Image element circuit structure and the method driving image element circuit structure | |
| US20180130415A1 (en) | Gate driving circuit, unit thereof, and display device | |
| CN102651197A (en) | Organic light emitting diode driving circuit, display panel, display and driving method | |
| CN113593481B (en) | Display panel and driving method thereof | |
| US8059072B2 (en) | Pixels, display devices utilizing same, and pixel driving methods | |
| CN109509434B (en) | Pixel driving circuit, display device and driving method | |
| CN102881253B (en) | A kind of image element circuit and thin film transistor backplane | |
| CN109036285B (en) | Pixel driving circuit and display device | |
| CN100428312C (en) | Electrolumi nescence display device and its driving method | |
| CN100373434C (en) | Pixel structure and its driving method and display using said pixel structure | |
| CN203134328U (en) | Pixel circuit and display device thereof | |
| CN214012483U (en) | Novel GIP circuit | |
| CN213716481U (en) | GIP circuit | |
| CN111312175B (en) | Trigger driving circuit and organic light emitting display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |