CN100353394C - Pixel circuit of display - Google Patents
Pixel circuit of display Download PDFInfo
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- CN100353394C CN100353394C CNB2005100894429A CN200510089442A CN100353394C CN 100353394 C CN100353394 C CN 100353394C CN B2005100894429 A CNB2005100894429 A CN B2005100894429A CN 200510089442 A CN200510089442 A CN 200510089442A CN 100353394 C CN100353394 C CN 100353394C
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Abstract
The present invention relates to a pixel circuit which is used for driving a plurality of pixels in display device panel and at least comprises a plurality of scanning lines, a plurality of data lines and a lightly doped drain thin film transistor (LDD-TFT) which are respectively connected to scanning lines and data lines of unit pixel and a driving transistor, wherein the lightly doped drain thin film transistor is at least provided with a first lightly doped drain and a second lightly doped drain which have different lengths, and the first lightly doped drain which is closest to the driving transistor has the maximal length.
Description
Technical field
The present invention relates to a kind of thin-film transistor structure of asymmetric lightly doped drain, particularly relevant for the thin-film transistor structure in a kind of liquid crystal display pixel circuit.
Background technology
Along with the lifting of manufacture of semiconductor, and thin film transistor (TFT) (Thin Film Transistor, TFT) assembly is done littler and littler, and the channel length between thin film transistor (TFT) source electrode and the drain electrode shortens thereupon.After the channel length of thin film transistor (TFT) shortened, (Threshold Voltage, decline Vt), and the generation of leakage current is arranged still had the phenomenon of thermoelectronic effect (Hot Electron Effects) and influence transistorized operation except meeting causes threshold voltage.In order to address this problem, prior art develops lightly doped drain (Lightly Doped Drain, LDD) structure is used for reducing the electric field at drain junction place, to alleviate the influence that thermoelectronic effect is brought.
Organic light emitting display (OLED) has been used a large amount of thin film transistor (TFT)s in two big functional circuit designs such as its image element circuit and peripheral driving circuit.Because the function of image element circuit and peripheral driving circuit and operational circumstances are also inequality, so its tft characteristics demand separately also is not quite similar.Aspect image element circuit, because thin film transistor (TFT) mainly is intended for the switch module of pixel, the GTG performance that provides suitable electric current to control Organic Light Emitting Diode, so its special reduction leakage current (Leakage-Current) that needs show normally to keep Organic Light Emitting Diode.
Please refer to Fig. 1.Fig. 1 is the diagrammatic cross-section of existing symmetrical lightly doped drain transistor arrangement.Symmetry lightly doped drain gated transistors 10 comprises a substrate 12, and semi-conductor layer 14 is located at substrate 12 surfaces, and a gate insulator 16 is located at semiconductor layer 14 surfaces, and a grid 18 is located at gate insulator 16 upper surfaces.Semiconductor layer 14 includes two lightly doped drains 140,142 and two source/drains 144,146, is symmetrically set in the both sides of grid 18, then is defined as a channel region 148 between the lightly doped drain 140 and 142.The light doping section that lightly doped drain 140 and 142 utilizes N type admixture to form is used for reducing the leakage current of symmetrical lightly doped drain gated transistors 10, and near the too high thermoelectronic effect that causes of electric field avoiding draining.
Yet be subjected to the lower influence of doping content, the source/drain that is higher than both sides 144 and 146 that lightly doped drain 140 is also relative with 142 resistance, therefore cause the resistance in series of 144,146 of drain electrode and source electrodes to increase easily, and then produce problems such as electronics drift rate and the reduction of whole assembly operation speed.In this case, desire is improved the leakage phenomenon of thin film transistor (TFT), how therefore the operating speed of necessary sacrificial component accepted or rejected in electronics drift rate and two kinds of component characteristics of leakage current just unavoidablely, an important consideration when just becoming the design ldd structure.
Please refer to Fig. 2, Fig. 2 is an image element circuit synoptic diagram in the existing display.A kind of image element circuit is used for the driving circuit of the active active display of current drives, comprises bigrid symmetry lightly doped drain electrode film transistor N1 at least, and its source electrode is connected to a data line D1, and its grid is connected to one scan line S1; One driving transistors P1, its grid are connected to the drain electrode of bigrid symmetry lightly doped drain electrode film transistor N1; One capacitor C 1, one end are connected to the source electrode of bigrid symmetry lightly doped drain electrode film transistor N1 and the grid of driving transistors P1; And a light emitting diode L1, its anode is connected to the drain electrode of driving transistors P1.
The scanning signal of S1 is opened bigrid symmetry lightly doped drain electrode film transistor N1 on sweep trace, bigrid symmetry lightly doped drain electrode film transistor N1 will make the data signals on the data line D1 pass through, be passed to the gate terminal of capacitor C 1 and driving transistors P1, controlling and driving transistor P1 is with the GTG performance of driven for emitting lights diode.
When on the sweep trace during S1 no-raster signal, bigrid symmetry lightly doped drain electrode film transistor N1 is for closing, and this moment, the electric capacity store charge made that the current potential of node A is a high level, and maintenance driving transistors P1 is for closing, and the current potential of Node B is a low level.Because the current potential of node A is relatively higher than the current potential of Node B, can cause a leakage current to flow to Node B by node A.
Therefore, the present invention will do an improvement at the assembly of image element circuit, make reducing of its leakage current.
Summary of the invention
The objective of the invention is to improve the assembly of image element circuit, make reducing of its leakage current.
Another purpose of the present invention is to utilize the length of lightly doped drain asymmetric, avoids assembly operation speed to lower in order to source electrode in the minimizing bigrid lightly doped drain electrode film transistor to series impedance value between drain electrode.
The present invention discloses a kind of image element circuit, in order to a plurality of unit picture elements in the driving display panel, image element circuit comprises at least: the multi-strip scanning line is formed on the display pannel, in order to transmit the scanning signal of these unit picture elements; Many data lines are formed on the display pannel, and staggered with the multi-strip scanning line, in order to transmit the data signals of these unit picture elements; An and lightly doped drain electrode film transistor (LDD-TFT), be connected to sweep trace, data line and a driving transistors of unit picture element, the lightly doped drain electrode film transistor, at least have one first different lightly doped drain of length and one second lightly doped drain, wherein have the longest length near first lightly doped drain of driving transistors.
The present invention utilizes lightly doped drain to reduce near the leakage current of drain electrode, length can be removed or be shortened to light dope as for contiguous source region then, with the resistance in series between effective reduction drain electrode and the source electrode, improve the operating speed of electronics drift rate and whole assembly.
Description of drawings
Fig. 1 is the diagrammatic cross-section of existing symmetrical lightly doped drain transistor arrangement;
Fig. 2 is an image element circuit synoptic diagram in the existing display;
Fig. 3 A is a preferred embodiment of the present invention one image element circuit synoptic diagram;
Fig. 3 B is the double-gate film transistor configurations figure with asymmetric lightly doped drain.
The reference numeral explanation
10 symmetrical lightly doped drain gated transistors 240 first lightly doped drains
242 second lightly doped drains 244 the 3rd lightly doped drain
246 the 4th lightly doped drains, 247 first channels
249 second channels, 281 first grids
282 second grids
12,22 substrates, 14,24 semiconductor layers
16,26 gate insulators, 18,28 grids
140,142 lightly doped drains
144,146,241,243,245 drain/sources
A, B, C node
C1 electric capacity D1 data line
L1 LED P 1 transistor
The S1 sweep trace
N1 bigrid symmetry lightly doped drain electrode film transistor
The asymmetric lightly doped drain electrode film transistor of N2 bigrid
Embodiment
Please refer to Fig. 3 A, it is an image element circuit synoptic diagram in a preferred embodiment of the present invention.This image element circuit is the driving circuit that is used for the active active display of current drives, comprises a bigrid thin film transistor (TFT) N2, a driving transistors P1, a capacitor C 1 and a light emitting diode L1 at least.Wherein, the source electrode of double-gate film transistor N2 is connected to a data line D1, and grid is connected to one scan line S1.The grid of driving transistors P1 is connected to the drain electrode of double-gate film transistor N2.Capacitor C 1 is connected to the grid joint of source electrode and the driving transistors P1 of double-gate film transistor N2.Light emitting diode L1, its anode then is connected to the drain electrode of driving transistors P1.Present embodiment and prior art major different are that promptly employed double-gate film transistor N2 has asymmetric lightly doped drain.Its drive principle is similar with prior art, does not add to give unnecessary details at this.
Please refer to Fig. 3 B, this figure is the double-gate film transistor configurations figure with asymmetric lightly doped drain.Double-gate film transistor N2 is a N type thin film transistor (TFT) in preferred embodiment of the present invention, yet an also available P type thin film transistor (TFT) replaces.Double-gate film transistor N2 comprises a substrate 22, and semi-conductor layer 24 is located at substrate 22 surfaces, and a gate insulator 26 is located at semiconductor layer 24 surfaces, and bigrid 28 is located at gate insulator 26 upper surfaces.
Wherein, very first grid 281 and second grid 282 of double grid; Semiconductor layer 24 includes: one source pole 241 one first lightly doped drain 240 that continues, continuous in regular turn drain/source 243 of one second lightly doped drain 242 and one the 3rd lightly doped drain 244, one the 4th lightly doped drain 246 is connected to a drain electrode 245, and first, second lightly doped drain 240, then be defined as one first channel region 247 between 242, its top is a first grid 281, the 3rd, the 4th lightly doped drain 244, then be defined as a second channel district 249 between 246, its top is that second grid 282, the first lightly doped drains 240 are the longest near a side and its length of driving transistors P1.
In the structure of double-gate film transistor N2, two sidewalls of first and second grid are stacked over the top of lightly doped drain respectively, that is to say that grid is that part is covered in the lightly doped drain top, yet two sidewalls of grid might not all will be covered in the lightly doped drain top, and the visual electrical design requirement of the relative position of grid and lightly doped drain interpolar is adjusted.
Generally speaking, lightly doped drain length calculation mode has two kinds (explaining orally with Fig. 3 B), and a kind of is by the defined length H1 of distance between the two ends of first lightly doped drain 240; Another kind be by first grid near an end of first lightly doped drain to the defined length H2 of the distance of the lightly doped drain other end.The present invention can select any lightly doped drain length calculation mode for use, can't influence effect of the present invention.
In present embodiment, the length of the first, second, third and the 4th lightly doped drain 240,242,244,246 is designed to 3,1,1,1 unit length respectively, utilize lightly doped drain to reduce near the leakage current of drain electrode, wherein again the length of first lightly doped drain 240 is increased, make its length very long than other three lightly doped drains, make total resistance of drain current path increase, and then reduce leakage current from node A to Node B.
The length of these three lightly doped drains then can be suitable shortening, even remove ldd structure fully, make the length of its three lightly doped drains 242,244,246 be less than or equal to the length of first lightly doped drain 240 respectively; Because these three lightly doped drain length are little for the leakage problem influence, shortening length can reduce the resistance in series between drain electrode and the source electrode, improves the operating speed of electronics drift rate and whole assembly.
Therefore can learn, compared to existing symmetric form thin-film transistor structure, thin-film transistor structure of the present invention includes asymmetric lightly doped drain, therefore can be further in drain electrode one side comparatively responsive to leakage problem, moderately increase the length of lightly doped drain, with effective reduction leakage current.
The present invention only lifts a preferred embodiment, is not in order to limit the scope of the invention.The asymmetric light dope thin film transistor (TFT) of employed in the present invention bigrid, the ratio of its lightly doped drain length also can need to change to some extent because of it, for example: 1. the first lightly doped drain length is greater than other three lightly doped drain length, and second, third length with the 4th lightly doped drain not necessarily equates.2. the first and the 3rd lightly doped drain equal in length, the second and the 4th lightly doped drain equal in length, and the first lightly doped drain length is greater than the second lightly doped drain length.3. first and second lightly doped drain equal in length, the equal in length of the 3rd and the 4th lightly doped drain, and the first lightly doped drain length is greater than the 3rd lightly doped drain length.
The present invention does not limit only can use the asymmetric light dope thin film transistor (TFT) of bigrid, can also substitute with the asymmetric light dope thin film transistor (TFT) of single grid simultaneously; Even and be the thin-film transistor structure of low gate type, be applied among the present invention, also can obtain identical effect.
Generally speaking, when thin film transistor (TFT) cuts out, still have voltage (electric field) to exist between drain electrode and the substrate, therefore be easy to generate leakage current.That is to say, the leakage problem of thin film transistor (TFT) is mainly comparatively responsive with the drain electrode near zone, therefore the present invention utilizes lightly doped drain to reduce near the leakage current of drain electrode, light dope as for contiguous source region then can be removed, with the resistance in series between effective reduction drain electrode and the source electrode, improve the operating speed of electronics drift rate and whole assembly.
Compared to existing symmetric form thin-film transistor structure, thin-film transistor structure of the present invention includes asymmetric lightly doped drain, therefore can moderately increase the length of lightly doped drain, with effective reduction leakage current further in drain electrode one side comparatively responsive to leakage problem.In addition, the present invention can also further shorten the length of lightly doped drain in source electrode one side, even removes the ldd structure of source side fully, with the resistance in series between effective reduction drain electrode and source electrode, improves electronics drift rate and whole assembly operation speed.
The above only is preferred embodiment of the present invention; it is not in order to limit practical range of the present invention; those skilled in the art all should belong to covering scope of the present invention in the modification of making without prejudice to spirit of the present invention, so protection scope of the present invention is a foundation with claim of the present invention.
Claims (15)
1. image element circuit, in order to a plurality of unit picture elements in the driving display panel, this circuit comprises at least:
The multi-strip scanning line is formed on this display pannel, in order to transmit the scanning signal of these unit picture elements;
Many data lines are formed on this display pannel, and staggered with this multi-strip scanning line, in order to transmit the data signals of these unit picture elements; And
The lightly doped drain electrode film transistor, be connected to this sweep trace, this data line and a driving transistors of this unit picture element, this lightly doped drain electrode film transistor, at least have one first different lightly doped drain of length and one second lightly doped drain, wherein has the longest length near this first lightly doped drain of this driving transistors
Wherein this lightly doped drain electrode film transistor is a bigrid thin film transistor (TFT), has a first grid and a second grid at least.
2. circuit as claimed in claim 1, wherein this double-gate film transistor also comprises one the 3rd lightly doped drain, one the 4th lightly doped drain, again this first grid to should first lightly doped drain, this second lightly doped drain, this second grid to should the 3rd lightly doped drain, the 4th lightly doped drain, and this first lightly doped drain is near this driving transistors, and this first lightly doped drain length is greater than other three lightly doped drain length.
3. circuit as claimed in claim 2, wherein this first lightly doped drain length is greater than other three lightly doped drain length, and this second, the 3rd with the equal in length of the 4th lightly doped drain.
4. circuit as claimed in claim 2, wherein this first with the equal in length of the 3rd lightly doped drain, this second with the equal in length of the 4th lightly doped drain, and this first lightly doped drain length is greater than this second lightly doped drain length.
5. circuit as claimed in claim 2, wherein this first with the equal in length of this second lightly doped drain, the 3rd with the equal in length of the 4th lightly doped drain, and this first lightly doped drain length is greater than the 3rd lightly doped drain length.
6. image element circuit is used for the driving circuit of the active active display of current drives, and each this image element circuit comprises:
The lightly doped drain electrode film transistor is opened in response to the one scan signal, and to transmit a data signals, wherein this lightly doped drain electrode film transistor has one first different lightly doped drain of length and one second lightly doped drain at least;
Driving transistors responds this data signals that this lightly doped drain electrode film transistor transmits and conducting one electric current; And
Light emitting diode, luminous by this electric current of this driving transistors conducting,
Wherein this first lightly doped drain is near this driving transistors, and has maximum length,
Wherein this lightly doped drain electrode film transistor is a bigrid thin film transistor (TFT), has a first grid and a second grid.
7. circuit as claimed in claim 6, wherein this double-gate film transistor also comprises one the 3rd lightly doped drain, one the 4th lightly doped drain, again this first grid to should first lightly doped drain, this second lightly doped drain, corresponding one the 3rd lightly doped drain of this second grid, one the 4th lightly doped drain, and this first lightly doped drain is very near this lightly doped drain of this driving transistors, and this first lightly doped drain length is more than or equal to other three lightly doped drain length.
8. circuit as claimed in claim 7, wherein this first lightly doped drain length is greater than other three lightly doped drain length, and this second, the 3rd with the equal in length of the 4th lightly doped drain.
9. circuit as claimed in claim 7, wherein this first with the equal in length of the 3rd lightly doped drain, and this second with the equal in length of the 4th lightly doped drain, and this first lightly doped drain length is greater than this second lightly doped drain length.
10. circuit as claimed in claim 7, wherein this first with the equal in length of this second lightly doped drain, the 3rd with the equal in length of the 4th lightly doped drain, and this first lightly doped drain length is greater than the 3rd lightly doped drain length.
11. an active organic light-emitting display has the image element circuit of a plurality of current drives designs, and utilizes one drive circuit to drive these image element circuits, this image element circuit comprises switching transistor, electric capacity, driving transistors and display module, it is characterized in that:
This switching transistor has two asymmetric lightly doped drains of length at least, and this switching transistor is near the length of this light dope utmost point of this driving transistors length greater than this lightly doped drain of opposite side,
Wherein this switching transistor is a bigrid lightly doped drain electrode film transistor.
12. display as claimed in claim 11, wherein this double gate transistor comprises a first grid and a second grid, wherein corresponding one first lightly doped drain of this first grid, one second lightly doped drain, corresponding one the 3rd lightly doped drain of this second grid, one the 4th lightly doped drain, and this first lightly doped drain is very near this lightly doped drain of this driving transistors, and this first lightly doped drain length is more than or equal to other three lightly doped drain length.
13. display as claimed in claim 12, wherein this first lightly doped drain length is greater than other three lightly doped drain length, and this second, third and the equal in length of the 4th lightly doped drain.
14. display as claimed in claim 12, the equal in length of this first and the 3rd lightly doped drain wherein, and the equal in length of this second and the 4th lightly doped drain, and this first lightly doped drain length is greater than this second lightly doped drain length.
15. display as claimed in claim 12, wherein this first with the equal in length of this second lightly doped drain, the 3rd with the equal in length of the 4th lightly doped drain, and this first lightly doped drain length is greater than the 3rd lightly doped drain length.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100894429A CN100353394C (en) | 2005-08-10 | 2005-08-10 | Pixel circuit of display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100894429A CN100353394C (en) | 2005-08-10 | 2005-08-10 | Pixel circuit of display |
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| CN1719508A CN1719508A (en) | 2006-01-11 |
| CN100353394C true CN100353394C (en) | 2007-12-05 |
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| CNB2005100894429A Active CN100353394C (en) | 2005-08-10 | 2005-08-10 | Pixel circuit of display |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103137054B (en) * | 2011-11-30 | 2015-09-23 | 上海中航光电子有限公司 | Bigrid pixels across inversion driving method |
| CN103366671A (en) * | 2012-04-06 | 2013-10-23 | 联胜（中国）科技有限公司 | Light emitting element display pixel |
| CN105206216A (en) * | 2015-10-23 | 2015-12-30 | 武汉华星光电技术有限公司 | Display device and display device shift register circuit applied to gate drive circuit |
| CN107086227B (en) * | 2017-05-11 | 2020-02-21 | 京东方科技集团股份有限公司 | Light-emitting circuit, electronic device, thin film transistor and preparation method thereof |
| CN110910825B (en) | 2019-12-10 | 2021-04-02 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN111445856B (en) * | 2020-05-13 | 2021-04-09 | 京东方科技集团股份有限公司 | Driving circuit, driving method, display panel and display device |
| CN112542516B (en) * | 2020-11-03 | 2024-01-30 | 北海惠科光电技术有限公司 | Active switch, manufacturing method thereof and display panel |
| CN114913823A (en) * | 2021-02-09 | 2022-08-16 | 上海树泉信息技术有限公司 | Pixel circuit based on double-gate transistor and driving method thereof |
| CN113629150A (en) * | 2021-07-27 | 2021-11-09 | 武汉华星光电技术有限公司 | Thin film transistor and display panel |
| CN113937157B (en) * | 2021-10-09 | 2024-04-16 | 武汉天马微电子有限公司 | Array substrate, display panel and display device |
| CN114171586B (en) * | 2022-02-10 | 2022-05-24 | 晶芯成(北京)科技有限公司 | Semiconductor device and manufacturing method thereof |
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| CN1588516A (en) * | 2004-07-13 | 2005-03-02 | 友达光电股份有限公司 | Pixel structure and its driving method and display using said pixel structure |
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| KR20040004788A (en) * | 2002-07-05 | 2004-01-16 | 주식회사 하이닉스반도체 | Semiconductor device having double lightly doped drain and method for fabricating ths same |
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| CN1588516A (en) * | 2004-07-13 | 2005-03-02 | 友达光电股份有限公司 | Pixel structure and its driving method and display using said pixel structure |
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