CN100369188C - Mirror charge effect quantum cellular automation making method - Google Patents
Mirror charge effect quantum cellular automation making method Download PDFInfo
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- CN100369188C CN100369188C CNB2005100706044A CN200510070604A CN100369188C CN 100369188 C CN100369188 C CN 100369188C CN B2005100706044 A CNB2005100706044 A CN B2005100706044A CN 200510070604 A CN200510070604 A CN 200510070604A CN 100369188 C CN100369188 C CN 100369188C
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Abstract
The present invention discloses a method for manufacturing mirror-image charge effect quantum cell automatons, which is characterized in that The present invention comprises the following steps: forming a thickness on the substrate to control an insulating layer; bonding a semiconductor layer on the substrate with the insulating layer through chip bonding technology; utilizing the technology of intelligent cutting or grinding, etc. to thin the thickness of the semiconductor layer to less than 100 nm; adopting etching technology to etch the semiconductor layer into quantum lattice array with a plurality of cell units which respectively comprises four quantum dots according to the requirements of elements and circuits of a quantum cell automaton; adopting the oxidation and the deposition technology to form an oxide layer around the quantum dots for preparing a mirror-image charge effect quantum cell automaton with two electrons in each cell; utilizing a scanning tunnel-piercing electrical mirror and an atomic force microscope to inject extra electrons; simultaneously forming equal quantity of mirror-image positive charges on the substrate after the electrons are injected.
Description
Technical field
The present invention designs a kind of manufacture method of mirror charge effect quantum cellular automation, especially a kind of at high conductive capability substrate such as metal substrate or high doping semiconductor substrate on form an insulating barrier such as the silicon dioxide (SiO that thickness can be controlled
2) etc., with wafer bonding technology semiconductor wafer such as silicon (Si) etc. is bonded on the substrate of the high conductive capability that has insulating barrier, utilize reduction process that semiconductor is thinned to thickness below the 100nm, adopt etching technics semiconductor lamella to be etched into the quantum dot permutation, and adopt oxidation and depositing technics around quantum dot, to form the technology that oxide layer is made mirror charge effect quantum cellular automation by the requirement of quantum cellular automata device and circuit; Be applicable to the making of mirror charge effect quantum cellular automation device and circuit.
Background technology
In the past few decades, the integrated level of microelectronic integrated circuit is more and more higher, and along with constantly dwindling of its characteristic line breadth, characteristics of transistor is near its physics limit, quantum effect is also more remarkable, and this makes development of integrated circuits run into an impassable bottleneck.In order to overcome above problem and to utilize new device and the circuit of quantum mechanical effects exploitation, Lent has proposed a kind of new computation schema--the notion of quantum cellular automation (Quantum cellular automaton is called for short QCA).Quantum cellular automation has utilized between the cellular short-range interactions to realize message transmission and logical operation, and it can avoid the problem of large scale integrated circuit middle and long distance difficult wiring, and it has at a high speed simultaneously, low-power consumption, characteristics such as high integration.In recent years, the research of QCA is more and more paid close attention to, a lot of concrete implementations are suggested, and small-scale QCA logical circuit has obtained checking experimentally.Wherein, our mirror charge effect quantum cellular automation (QCA) that proposes is one of scheme of tool realizability.The outstanding advantage that image charge QCA compares with other QCA is the neutral charge that reaches the entire device structure easily, and utilizes quantum-mechanical tunneling effect can inject two remaining work electric charges in each cellular.Although mirror charge effect QCA organization plan has been suggested, up to the present also there is not the process of the complete realization mirror charge effect QCA of a cover.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of mirror charge effect quantum cellular automation, its advantage are the semiconductor technology of employing standard and the method that nanofabrication technique combines, and can realize mirror charge effect quantum cellular automation device and circuit.
In order to achieve the above object, the present invention is by the following technical solutions:
The present invention is a kind of manufacture method of mirror charge effect quantum cellular automation, it is characterized in that, may further comprise the steps:
1) on substrate, forms the insulating barrier that thickness can be controlled;
2) semiconductor layer is bonded on the substrate that has insulating barrier with wafer bonding technology;
3) utilize intelligence to cut off or technologies such as grinding are thinned to thickness below the 100nm with semiconductor layer;
4) by the requirement of quantum cellular automata device and circuit, adopt etching technics that semiconductor layer is etched into quantum dot array, this quantum dot array comprises a plurality of cellulars unit, each cellular unit comprises four quantum dots;
5) adopt oxidation and depositing technics around quantum dot, to form oxide layer, make mirror charge effect quantum cellular automation, two electronics are arranged in each cellular;
6) utilize scanning tunnelling Electronic Speculum and atomic force microscope, inject extra electronics, after electronics injects, will form the mirror image positive charge of equivalent on the substrate simultaneously.
Wherein substrate is the substrate of high conductive capability, is metal material or high doping semiconductor material, can carry out various processes in the above.
Wherein the insulating barrier on the substrate is oxide layer or nitration case, form with high-temperature oxidation, or form with the method for deposit, can be according to the requirement of mirror charge effect quantum cellular automation device and circuit, regulate temperature, parameters such as time obtain the thickness of corresponding insulation layer.
Wherein semiconductor layer is Si, GaAs semiconductor monocrystal sheet or the semiconductor that has superlattice structure, is bonded to by bonding method on the insulating barrier of substrate.
Wherein quantum dot array adds nanowire growth process technology formation such as ion etching with electron beam exposure, and quantum dot is a column or hemispherical, and the size of quantum dot and the spacing of quantum dot are processed according to the requirement of mirror charge effect quantum cellular automation device.
The method that oxide layer after wherein quantum dot array forms adopts high-temperature oxydation to add the deposit of oxide layer according to semi-conductive kind forms or the method for the deposit of simple oxide layer forms.
Description of drawings
For further specifying technology of the present invention, be described in detail as follows below in conjunction with execution mode and accompanying drawing, wherein:
Fig. 1 is the structural representation of mirror charge effect quantum cellular automation device.
Fig. 2 is a process chart of making mirror charge effect quantum cellular automation.
Embodiment
See also Figure 1 and Figure 2,
See also Fig. 1, Fig. 1 has provided the structural representation of mirror charge effect quantum cellular automation.It is by substrate 101, insulating barrier 102, and semiconductor-quantum-point 104, and form around quantum dot 104 that oxide layer 103 constituted.The material of its substrate 101 is metal materials.On this substrate 101, can form the silicon dioxide (SiO that a thickness can be controlled
2) insulating barrier 102.Utilize wafer bonding technology semiconductor layer 108 (silicon (Si) wafer) can be bonded to and have silica (SiO
2) on the metal substrate 101 of insulating barrier 102.Adopt intelligence to cut off (smart cut) technology then and semiconductor layer (108) can be thinned to the following thickness of 100nm.The thin layer of this semiconductor layer 108 can adopt etching technics to be etched into quantum dot 104 permutations by the requirement of quantum cellular automata device and circuit, four quantum dots constitute a cellular 106, two electronics 105 are arranged in each cellular, correspondingly can in metal substrate 101, have two image charges 107.Adopt high-temperature oxydation and oxide layer depositing technics around quantum dot, to form SiO at last
2Oxide layer 103 just can be made into mirror charge effect quantum cellular automation.
See also Fig. 2, the manufacture method of a kind of mirror charge effect quantum cellular automation of the present invention may further comprise the steps:
1) (Fig. 2 a) for the insulating barrier 102 that thickness of formation can be controlled on substrate 101; This substrate 101 is substrates of high conductive capability, is metal material or high doping semiconductor material, can carry out various processes in the above;
2) semiconductor layer 108 is bonded to (Fig. 2 b) on the substrate 101 that has insulating barrier 102 with wafer bonding technology; This semiconductor layer 108 is Si, GaAs semiconductor monocrystal sheet or the semiconductor that has superlattice structure, is bonded to by bonding method on the insulating barrier 102 of substrate 101;
3) utilize intelligence to cut off or technologies such as grinding are thinned to thickness (Fig. 2 c) below the 100nm with semiconductor layer 108;
4) by the requirement of quantum cellular automata device and circuit, adopt etching technics that semiconductor layer 108 is etched into quantum dot array, this quantum dot array comprises a plurality of cellulars unit 106, each cellular unit 106 comprises four quantum dots 104 (Fig. 2 d); Wherein quantum dot array adds nanowire growth process technology formation such as ion etching with electron beam exposure, quantum dot 104 is columns or hemispherical, and the spacing of the size of quantum dot 104 and quantum dot 104 is processed according to the requirement of mirror charge effect quantum cellular automation device;
5) adopt oxidation and depositing technics around quantum dot 104, to form oxide layer 103 (Fig. 2 e), make mirror charge effect quantum cellular automation, two electronics 105 are arranged in each cellular; Wherein the 103 usefulness high-temperature oxidations of the oxide layer on the insulating barrier 102 form, or form with the method for deposit, can regulate temperature according to the requirement of mirror charge effect quantum cellular automation device and circuit, and parameters such as time obtain the thickness of corresponding oxide layer 103;
6) utilize scanning tunnelling Electronic Speculum and atomic force microscope, inject extra electronics, after electronics injects, will form the mirror image positive charge 107 (Fig. 2 e) of equivalent on the substrate 101 simultaneously.
Embodiment
Please consult Fig. 2 again, provided the process schematic representation of making image charge cellular automata device among Fig. 2.At first, shown in (a) among Fig. 2, on metal substrate 101 deposit a silicon dioxide (SiO
2) insulating barrier 102, can regulate temperature according to the requirement of mirror charge effect quantum cellular automation device, parameters such as time obtain corresponding thickness of oxide layer.
Then, shown in (b) among Fig. 2, at SiO
2Available wafer bonding technology gets on semiconductor layer 108 (Si wafer) bonding on the insulating barrier 102.Adopt intelligence to cut off (smart cut) technology then semiconductor layer 108 is thinned to thickness below the 100nm, obtain the result shown in (c) among Fig. 2.
Then, want the structure of the mirror charge effect quantum cellular automation device that obtains to be processed to form Si quantum dot 104 arrays according to us, as shown in Fig. 2 (d).Quantum dot 104 arrays can add nanowire growth process technology formation such as ion etching with electron beam exposure, these quantum dots 104 can be column or shape such as hemispherical, the arrangement of the quantum dot 104 in quantum dot 104 permutations, the spacing of the size of quantum dot 104 and quantum dot 104 can carry out etching according to our actual needs or growth obtains.In quantum dot 104, utilize scanning tunnelling Electronic Speculum (STM) and atomic force microscope (AFM), can inject extra electronics.After electronics injects, will form the mirror image positive charge 107 of equivalent simultaneously on the metal substrate, thereby keep the neutral charge of whole QCA circuit.
At last, shown in Fig. 2 (e), after quantum dot 104 arrays form, need around quantum dot 104, form oxide layer 103.Oxide layer 103 can form according to the method that semi-conductive kind adopts high-temperature oxydation to add the deposit of oxide layer or the method for the deposit of simple oxide layer forms.This oxide layer plays a part to wear then potential barrier.
Just can realize utilizing the device architecture of the quantum cellular automation of image charge 107 effects by above technical process.
Claims (7)
1. the manufacture method of a mirror charge effect quantum cellular automation is characterized in that, may further comprise the steps:
1) on substrate, forms the insulating barrier that thickness can be controlled;
2) semiconductor layer is bonded on the substrate that has insulating barrier with wafer bonding technology;
3) utilize intelligence to cut off or technologies such as grinding are thinned to thickness below the 100nm with semiconductor layer;
4) by the requirement of quantum cellular automata device and circuit, adopt etching technics that semiconductor layer is etched into quantum dot array, this quantum dot array comprises a plurality of cellulars unit, each cellular unit comprises four quantum dots;
5) adopt oxidation and depositing technics around quantum dot, to form oxide layer, make mirror charge effect quantum cellular automation, two electronics are arranged in each cellular;
6) utilize scanning tunnelling Electronic Speculum and atomic force microscope, inject extra electronics, after electronics injects, will form the mirror image positive charge of equivalent on the substrate simultaneously to quantum dot.
2. the manufacture method of mirror charge effect quantum cellular automation according to claim 1 is characterized in that, wherein substrate is the substrate of high conductive capability, is metal material, can carry out various processes in the above.
3. the manufacture method of mirror charge effect quantum cellular automation according to claim 1 is characterized in that, wherein substrate is the substrate of high conductive capability, is the high doping semiconductor material, can carry out various processes in the above.
4. the manufacture method of mirror charge effect quantum cellular automation according to claim 1, it is characterized in that, wherein the oxide layer on the insulating barrier forms with high-temperature oxidation, or form with the method for deposit, requirement according to mirror charge effect quantum cellular automation device and circuit, regulate temperature, time parameter obtains corresponding thickness of oxide layer.
5. the manufacture method of mirror charge effect quantum cellular automation according to claim 1, it is characterized in that, wherein semiconductor layer is Si, GaAs semiconductor monocrystal sheet or the semiconductor that has superlattice structure, is bonded to by bonding method on the insulating barrier of substrate.
6. the manufacture method of mirror charge effect quantum cellular automation according to claim 1, it is characterized in that, wherein quantum dot array adds the formation of ion etching nanowire growth process technology with electron beam exposure, quantum dot is a column or hemispherical, and the size of quantum dot and the spacing of quantum dot are processed according to the requirement of mirror charge effect quantum cellular automation device.
7. according to the manufacture method of claim 1 or 6 described mirror charge effect quantum cellular automations, it is characterized in that the method that the oxide layer after wherein quantum dot array forms adopts high-temperature oxydation to add the deposit of oxide layer according to semi-conductive kind forms or the method for the deposit of simple oxide layer forms.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104407835A (en) * | 2014-10-11 | 2015-03-11 | 南京航空航天大学 | Three-dimensional quantum cellular automata adder |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105741357B (en) * | 2014-12-06 | 2018-10-12 | 中国石油化工股份有限公司 | A method of it reproducing the crystallization process of molecular sieve and describes its exterior appearance |
| CN109522671B (en) * | 2018-11-30 | 2022-09-20 | 合肥工业大学 | Two-dimensional clock structure for nanometer quantum cellular automatic machine circuit and design method thereof |
| CN110287628B (en) * | 2019-07-01 | 2023-03-24 | 合肥工业大学 | Simulation method of nanometer quantum cellular automatic machine circuit |
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| CN1366331A (en) * | 2001-01-18 | 2002-08-28 | 株式会社Comtecs | Manufacturing method of SOI chip |
| JP2003204859A (en) * | 2002-01-15 | 2003-07-22 | Tosu:Kk | Synthetic resin-made pinch |
| CN1495849A (en) * | 2002-08-10 | 2004-05-12 | 朴在仅 | Method for making nano SOI chip and nano SOI chip therefrom |
| JP2005116939A (en) * | 2003-10-10 | 2005-04-28 | Nikon Corp | Solid-state imaging device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1366331A (en) * | 2001-01-18 | 2002-08-28 | 株式会社Comtecs | Manufacturing method of SOI chip |
| JP2003204859A (en) * | 2002-01-15 | 2003-07-22 | Tosu:Kk | Synthetic resin-made pinch |
| CN1495849A (en) * | 2002-08-10 | 2004-05-12 | 朴在仅 | Method for making nano SOI chip and nano SOI chip therefrom |
| JP2005116939A (en) * | 2003-10-10 | 2005-04-28 | Nikon Corp | Solid-state imaging device |
Non-Patent Citations (4)
| Title |
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| Configuration-Interaction Based Simulation of a QuantumCellular Automaton Cell. M.Girlanda, M.Governale, M.Macucci, G.Iannaccone.Extended Abstracts of 1998 Sixth International Workshop on. 1998 * |
| Quantum Cellular Automaton Device Using the Image ChargeEffect. Nan-Jian Wu, Naoto Shibata, and Yoshihito Amemiya.Jpn. J. Appl. Phys,Vol.37 . 1998 * |
| Simulation of a complete chain of QCA cells with realisticpotentials. M.Girlanda and M.Macucci.IWCE Glasqow 2000. 7th International Workshop on. 2000 * |
| 量子点分布误差对镜像电荷自动元胞机的影响. 汪艳贞，吴南健.第十三届全国化合物半导体材料、微波器件和光电器件学术会议. 2004 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104407835A (en) * | 2014-10-11 | 2015-03-11 | 南京航空航天大学 | Three-dimensional quantum cellular automata adder |
| CN104407835B (en) * | 2014-10-11 | 2017-05-17 | 南京航空航天大学 | three-dimensional quantum cellular automata adder |
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