CN100369048C - Structure of slide fingerprint sensing chip with anti-static function and forming method - Google Patents
Structure of slide fingerprint sensing chip with anti-static function and forming method Download PDFInfo
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- CN100369048C CN100369048C CNB2005100851438A CN200510085143A CN100369048C CN 100369048 C CN100369048 C CN 100369048C CN B2005100851438 A CNB2005100851438 A CN B2005100851438A CN 200510085143 A CN200510085143 A CN 200510085143A CN 100369048 C CN100369048 C CN 100369048C
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 63
- 239000002184 metal Substances 0.000 claims abstract description 63
- 230000003068 static effect Effects 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 230000002093 peripheral effect Effects 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 15
- 239000002861 polymer material Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 30
- 239000004642 Polyimide Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 239000012634 fragment Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 208000034189 Sclerosis Diseases 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 238000007599 discharging Methods 0.000 abstract 3
- 229920000642 polymer Polymers 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 66
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000013461 design Methods 0.000 description 9
- 238000005538 encapsulation Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 230000006378 damage Effects 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- -1 silit Chemical compound 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003278 mimic effect Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The present invention provides structure and formation process of antistatic sliding fingerprint sensing chip. The chip includes one semiconductor substrate, one sliding fingerprint sensing chip on the substrate, one polymer layer and one electrostatic discharging metal layer. The sliding fingerprint sensing chip includes one sliding fingerprint sensor and one peripheral circuit layer, the sliding fingerprint sensor possesses one naked fingerprint sensing area to sense fingerprint image segments of finger passing through it, and the peripheral circuit layer beside the sensor is used to control the operation of the sensor. The polymer layer on the peripheral circuit layer has one flat surface; and the electrostatic discharging metal layer on the flat surface is for discharging static electricity. The present invention has effective antistatic effect.
Description
Technical field
The present invention relates to a kind of fingerprint sensing chip, particularly a kind of structure and formation method with slide fingerprint sensing chip of anti-static function.
Background technology
The present invention is associated with following one of them inventor's following patent: (a). Chinese invention patent application case number 02105960.8, and the applying date is on April 10th, 2002, and denomination of invention is " capacitance type fingerprint access chip ", and publication number is 1450489; (b). Chinese invention patent application case number 02123058.7, the applying date is on 06 13rd, 2002, and denomination of invention is " pressure type fingerprint reads chip and manufacture method thereof ", and publication number is 1464471; (c). Chinese invention patent application case number 02124906.7, the applying date is on 06 25th, 2002, and denomination of invention is " temperature sensor and use the identification of fingerprint chip of this temperature sensor ", and publication number is 1463674; (d). Chinese invention patent application case number 02132054.3, the applying date is on 09 10th, 2002, and denomination of invention is " the fingerprint access chip structure of capacitive pressure little sensing unit and application thereof ", and publication number is 1482440; (e). Chinese invention patent application case number 03124183.2, the applying date is on May 6th, 2003, denomination of invention is " a kind of capacitance type fingerprint sensor and a manufacture method thereof "; (f). Taiwan application for a patent for invention case number 093110603, the applying date is on April 16th, 2003, and denomination of invention is the chip type sensor of stress rupture and anti-residual dirty interferences " can be antistatic with ", and Certificate Number is for inventing No. 233198; And (g) Taiwan application for a patent for invention case number 094108291, the applying date is on March 18th, 2005, denomination of invention is " a kind of slidingtype image sensing chip and disposal route thereof with image comparison function ".
In the chip manufacturing mode that field of semiconductor technology provided, need the consideration electrical characteristics that chip provided usually, and need the program of chip by encapsulation is arranged in the encapsulation matrix, to exempt for example any possible destruction of external force such as pressure and static.
Yet development along with the chip application field, new application must make the chip surface of part be exposed in the environment, for example the fingerprint sensor of chip type just needs to provide a chip surface that contacts with finger, to read the lines of finger, uses as identification.
For this reason, the mechanical property of chip surface must be carried out consideration an anti-finger to be provided to exert pressure and the structure of antistatic destruction.
In the prior art; the foundation structure of capacitance type fingerprint sensor chip is to make associated sensed and control processing circuit in a silicon substrate; at a plurality of sheet metals of the surface arrangement array type of chip as sensing electrode (from then on comprise sensing and control processing circuit and silicon substrate below the sensing electrode and will be referred to as board structure); and form the outmost surface of a dielectric materials layer in chip, double sense capacitance dielectric medium and the chip done is exposed to outer protective seam.For reaching said chip surface withstand voltage and wear-resisting characteristic; prior art all is to utilize the protective seam of a hard dielectric material as the outermost top layer; for example world patent WO 01/06448A1, WO 03/098541A1, United States Patent (USP) the 6th; 091,082, European patent EP 1256899, United States Patent (USP) the 6th, 114; No. 862 and United States Patent (USP) the 6th; 515, No. 488, all disclosed this structure.In brief, a stiff materials layer of silicon nitride, silit, aluminium oxide or diamond is formed at the board structure top nothing more than for example making in the invention of prior art, or retains the dielectric material of a softness, for example monox between the two.
Though for example the strength characteristics of the stiff materials layer material essence of silicon nitride, silit, aluminium oxide or diamond is good, but but be subjected to the restriction of thickness when being made on the aforesaid substrate structure in semiconductor technology easily, its reason is described to be to be caused by the hot unrelieved stress between material layer and board structure.Usually silicon nitride, silit, aluminium oxide or diamond can cause tension stress (tensile stress) effect to the described board structure based on silicon substrate, if deposit too thick described material on described board structure, can stress and cause breaking, thus, the not only easy stressed breakage of chip also can't be born electrostatic breakdown.Usually in semiconductor technology, only can provide thickness less than 2 microns making to avoid the problems referred to above.Even so, still exist sizable hot unrelieved stress in wherein, be easy to generate fault in material, cause stress to concentrate, the application of force all may damage improperly.For this reason, solve hot unrelieved stress, just become an important topic to increase protection thickness of structure (physical strength is directly proportional with the cube of thickness).
Except mechanical properties such as said chip surface withstand voltage, electrostatic breakdown is another important topic.Solving electrostatic breakdown can divide two directions to inquire into; a kind of mode is the thickness that increases protective seam; because the static electric field intensity that can bear and thickness square are directly proportional; for example general commercial integrated circuit technology; its protective layer thickness is about 1 micron (its material is generally the double-decker of monox and silicon nitride); the electrostatic breakdown voltage that can bear (air mode) is about 1KV; again because the protective layer structure of foregoing invention can't effectively increase its thickness, so foregoing invention can't only utilize protective layer material to reach the protection of electrostatic breakdown.
For this reason, another kind of mode be utilize the bare metal reticulate texture with the static charge conducting to ground state, for example foregoing invention WO 01/06448A1, WO 03/098541A1, European patent EP 1256899 all have employing the method, and the notion of this kind metal conduction static all has employing at many electronic products.Difference only is, need consider the matching with integrated circuit manufacturing process and material when chip surface is implemented.
For example, world patent WO 01/06448A1 has disclosed the bare metal reticulate texture as the electrostatic conducting structure, yet for example individual layer TiN that is adopted in employed manufacturing process is not an integrated circuit technology institute accepted standard method as metal sensing electrode and bare metal reticulate texture, and the uneven degree of chip also causes the broken string problem of TiN film wire easily, moreover TiN resistance matter is quite big, if the big electric current of static of moment is arranged by then blowing easily.In addition, world patent WO 03/098541A1 also discloses a kind of bare metal reticulate texture much at one as the electrostatic conducting structure.Main difference only is that the metal outmost surface of being exposed has comprised gold copper-base alloy, and such design can solve the corrosion of metal problem.Yet this manufacturing process but can't be compatible with in the silicon integrated circuit technology, because gold copper-base alloy can cause polluting.
European patent EP discloses a kind of tungsten wire netting design for No. 1256899.Yet in the deposition of tungsten metal and follow-up etchback step, form many small holes on the silit protective seam of sensor surface and cause defective, and problem such as can cause that stress is concentrated.When pointing the outside surface of the careless shock transducer of nail, the destruction that can cause sensor.And the structure of small hole can make the protective seam surface form water wettability, therefore can spread when the moisture of finger contacts outside surface, and then make the image quality variation.For this reason, need be by the deposition of monox and follow-up cmp (CMP) technology and monox is filled up aforesaid small holes reach smooth outside surface.Like this, make the manufacture process too complex again, and be not suitable for the manufacturing course of general commercial wafer foundry.
For addressing the above problem; inventor herein straight three above-mentioned (e) patent of having checked and approved proposed a kind of can antistatic destruction and the anti-residual dirty capacitance type fingerprint sensor that disturbs, it comprises one and includes the silicon substrate of integrated circuit, a plurality of plate electrode, a wire netting, a plurality of static discharges unit, a plurality of weld pad and a protective seam.Described wire netting is arranged in length and breadth between the described plate electrode and with described plate electrode and flushes, and surrounds each described plate electrode, and described wire netting is connected to an earth terminal.Described static discharge unit is connected with described wire netting, and is formed between the adjacent plate electrode of the predetermined number in the described plate electrode, and the number of described static discharge unit is less than the number of described plate electrode.
Above-mentioned prior art all is the antistatic destruction that the fingerprint sensing chip (area-type fingerprintsensor) for area-type is considered.Product LTT-C500 with Xiangqun Science Co., Ltd's volume production is an example, its sensing area is 192 * 236 (9.6mm * 11.8mm), and chip size is about 10mm * 12mm, main as can be seen chip area all is to be covered with two-dimentional sensing element array, so its relevant antistatic design all is the design of considering the sensing area.Fig. 1 is a kind of schematic appearance of area-type fingerprint sensing chip.As shown in Figure 1, sensing element array 102 relevant the reading and control circuit 103 on every side that area-type fingerprint sensing chip 100 comprises the sensing element array 102 that is formed at a two dimension on the semiconductor substrate 101 and is positioned at two dimension, for example Gain Adjustable formula amplifier, analog-digital converter and steering logic etc.
Fig. 2 be the fingerprint sensing chip of Fig. 1 through encapsulation after, along the diagrammatic cross-section of the A-A line of Fig. 1.As shown in Figure 2, area-type fingerprint sensing chip 100 is placed on the base plate for packaging 110 and encapsulates, and wherein comprises routing process and sealing process.Sealing 120 is sealed and is read and control circuit 103 avoids finger F or damage of external force it is provided protection.By among Fig. 2 as can be seen, the fingerprint sensing chip of this area-type all is a mode of utilizing encapsulation, for example sealing, transfer molding modes such as (transfer molding) in it, avoids being subjected to extraneous environmental interference and electrostatic breakdown with circuit protection.Therefore main environmental interference and electrostatic breakdown consider it all is the sensing element array 102 that concentrates on two dimension, also are the emphasis of above-mentioned all descriptions of the Prior Art.
Yet because the size restrictions of finger, the sensing area of existing chip formula fingerprint sensor is at least greater than 9mm * 9mm.Again because the restriction that silicon integrated circuit is made, only can 50 to 70 effective chips of output in 6 inches wafers of a slice, add the packaging and testing cost, to make the price of single fingerprint sensor at least greater than more than 10 dollars, this will limit it and be applied to various consumption electronic products, for example mobile computer, mobile phone, personal digital assistant, computer-related products are integrated the personal identification card of fingerprint sensor even.
In order to overcome above-mentioned cost problem, the length of conventional two-dimensional chip type fingerprint sensor can be dwindled (can be considered as one dimension approximately), with the output number that increases effective chip and reduce the chip unit price.Its principle is to slide through chip surface by finger, finish the scanning of whole finger, again every fragment fingerprint image that captures is set up association and store into a referrer module, follow-up use also is identical finger to be slipped over chip surface, and obtain a fingerprint module, by the status that more just can confirm the user of fingerprint module and referrer module.For example less than 1.5mm, sensing unit length is 0.4mm (8 pixel) to the chip size of the straight third-class people of this case inventor embodiment that discloses in above-mentioned (g) patent case in glide direction, and its synoptic diagram can be with reference to Fig. 3.Fig. 3 is a kind of schematic appearance of sliding-type fingerprint sensing chip.Fig. 4 be the fingerprint sensing chip of Fig. 3 through encapsulation after, along the diagrammatic cross-section of the B-B line of Fig. 3.Shown in Fig. 3 and 4, sensing element array 202 relevant the reading and control circuit 203 on every side that slide fingerprint sensing chip 200 comprises the sensing element array 202 that is formed at an approximate one dimension on the semiconductor substrate 201 and is positioned at approximate one dimension, for example Gain Adjustable formula amplifier, analog-digital converter and steering logic etc.If encapsulate according to existing area-type fingerprint sensing chip 100 slide fingerprint sensing chip 200 is placed on the base plate for packaging 210, wherein comprise routing process and sealing process.Sealing 220 seal read and control circuit 203 to provide protection to it.By Fig. 3 and 4 as can be seen; when finger F slides through its surface; finger can't touch chip sensing region (because sealing highly too high (being generally more than the hundreds of micron) of periphery) easily; so just the too high finger F that causes of protection glue because of both sides is difficult for touching chip surface; its encapsulation certainly will will be as shown in Figure 5 exposed reading and control circuit 203, and the good effect that contacts for almost waiting the plane to reach and pointing.
Fig. 5 shows a kind of encapsulating structure synoptic diagram of traditional slide fingerprint sensing chip.See also Fig. 5, touch sensing element array 202 easily when finger F is slided, its encapsulation requires planes such as needs, small difference in height is perhaps only arranged, for example several microns.Arround the sensing element array 202 read and area that control circuit 203 is occupied almost reaches the over half of whole slide fingerprint sensing chip 200.So; if will reach entire chip in the almost requirement of equal altitudes of finger glide direction; the protection of circuit arround its Electrostatic Discharge protection design focal point will focus on, rather than the sensor of picture area-type, priority of protection is on the two-dimentional sensing element array (as previously mentioned).
For this reason, when chip was disturbed by ESD, exposed other as shown in Figure 5 reads and control circuit 203 is easy to be damaged, gently then produce breech lock (latch-up) effect, chip needs replacement (reset) to use, and heavy then chip is broken by static fully, can't use.Fig. 6 A to 6C shows the structural representation of the slide fingerprint sensing chip that another is traditional.Shown in Fig. 6 A to 6C, existing solution is after finishing slide fingerprint sensing chip 200 and making, and utilizes the mode of plated film or plating to be paved with the metal level 230 of a ground connection on slide fingerprint sensing chip 200.Yet this kind mode can read and control circuit 203 because of ESD disturbs the generation point discharge to destroy again because of the unevenness of chip surface.For example, when electrostatic charge 250 is got to chip, most advanced and sophisticated 204 cause point discharge and make read and control circuit 203 destroyed.In addition; described ground metal layer 230 and read and 203 of control circuits have serious stray capacitance (because the protective layer material of the outmost surface that covers slide fingerprint sensing chip 200 that semiconductor factory provided (for example monox and silicon nitride are not the very little materials of dielectric coefficient; and only about about 1 micron of thickness)); and the situation of described metal level 230 ground connection also may interfere with because the voltage in ground connection source floats and read and the operation of control circuit 203, therefore want directly read and the protective seam of control circuit 203 above metal film layer is set can has considerable problem.
Summary of the invention
Therefore, one object of the present invention is to provide a kind of slide fingerprint sensing chip with anti-static function and forming method thereof, to solve the problem that point discharge was caused.
For achieving the above object, the invention provides a kind of slide fingerprint sensing chip with anti-static function, comprise semiconductor substrate, a slide fingerprint sensing chip, a polymer material layer and a static discharge metal level; Described slide fingerprint sensing chip is formed on the described semiconductor substrate, and comprises a sweep fingerprint sensor and a peripheral circuit layer; Described sweep fingerprint sensor has an exposed fingerprint sensing district, slides through a plurality of fragment fingerprint images of the finger of one on it in order to sensing; Described peripheral circuit layer is formed on the described semiconductor substrate and is positioned at by the described sweep fingerprint sensor, in order to control a running of described sweep fingerprint sensor; Described polymer material layer is arranged on the described peripheral circuit layer, and has a planarized surface; Described static discharge metal level is arranged on the described planarized surface of described polymer material layer, and this static discharge metal level is grounded, and uses for static discharge and uses.
Described polymer material layer is made by polyimide, benzyl ring butylene or epoxy resin-matrix photoresistance.
The thickness of described polymer material layer is greater than 2 microns.
The thickness of described polymer material layer is between 2 microns to 5 microns.
Described static discharge metal level is made by aluminium or gold.
Described static discharge metal layer thickness is greater than 1 micron.
For achieving the above object, the present invention also provides a kind of formation method with slide fingerprint sensing chip of anti-static function, may further comprise the steps:
A. on a semiconductor substrate, form a slide fingerprint sensing chip, wherein said slide fingerprint sensing chip comprises: a sweep fingerprint sensor, have an exposed fingerprint sensing district, slide through a plurality of fragment fingerprint images of the finger of one on it in order to sensing; One peripheral circuit layer is formed on the described semiconductor substrate and is positioned at by the described sweep fingerprint sensor, in order to control a running of described sweep fingerprint sensor;
B. form a polymer material layer in described peripheral circuit layer, described polymer material layer has a planarized surface;
C. form a static discharge metal level on the described planarized surface of described polymer material layer, this static discharge metal level is grounded, and uses for static discharge.
Described step b comprises:
B1. rotary coating one macromolecular material on described slide fingerprint sensing chip;
B2. make described macromolecular material sclerosis to form described polymer material layer, make described polymer material layer therefore have described planarized surface;
B3. remove the described polymer material layer of part, to expose described fingerprint sensing district.
Described polymer material layer is made by polyimide, benzyl ring butylene or epoxy resin-matrix photoresistance.
The thickness of described polymer material layer is greater than 2 microns.
The thickness of described polymer material layer is between 2 microns to 5 microns.
Described static discharge metal level is made by aluminium or gold.
Described static discharge metal layer thickness is greater than 1 micron.
Described step c comprises:
C1. deposition one metal level in the described planarized surface of described polymer material layer and described fingerprint sensing district;
C2. remove the described metal level of part that is positioned in the described fingerprint sensing district, use for static discharge as described static discharge metal level to stay remaining described metal level.
Beneficial effect of the present invention is, utilizing increases by a polymer material layer between the dielectric layer of metal level and slide fingerprint sensing chip, this design can because of the spacing change of the mimic channel of metal level and peripheral circuit layer greatly, and reduced the generation of stray capacitance; And the macromolecular material of selecting low dielectric radio again can further reduce the influence of stray capacitance.
The production method of described macromolecular material utilizes the mode of rotary coating to finish, and can form quite smooth surface at chip surface, even original chip surface is uneven, also can reach smooth surface by the method.Therefore also be difficult for producing the problem of point discharge between the surface of metal level and polymer material layer, increased the anlistatig ability of circuit.
Description of drawings
Fig. 1 is a kind of schematic appearance of area-type fingerprint sensing chip;
Fig. 2 be the fingerprint sensing chip of Fig. 1 through encapsulation after, along the diagrammatic cross-section of the A-A line of Fig. 1;
Fig. 3 is a kind of schematic appearance of slide fingerprint sensing chip;
Fig. 4 be the fingerprint sensing chip of Fig. 3 through encapsulation after, along the diagrammatic cross-section of the B-B line of Fig. 3;
Fig. 5 shows a kind of encapsulating structure synoptic diagram of traditional slide fingerprint sensing chip;
Fig. 6 A to 6C shows a kind of synoptic diagram of structure of traditional slide fingerprint sensing chip;
Fig. 7 shows the structural representation of the slide fingerprint sensing chip of preferred embodiment of the present invention;
The synoptic diagram of the formation method of the slide fingerprint sensing chip of Fig. 8 A to 8C demonstration preferred embodiment of the present invention.
[primary clustering symbol description]
F: finger 10: semiconductor substrate
20: slide fingerprint sensing chip 21: sweep fingerprint sensor
21A: fingerprint sensing district 22: peripheral circuit floor
30: polymer material layer 31: planarized surface
40: static discharge metal level 100: the area-type fingerprint sensing chip
101: semiconductor substrate 102: the sensing element array
103: read and control circuit 110: base plate for packaging
120: sealing 200: slide fingerprint sensing chip
201: semiconductor substrate 202: the sensing element array
203: read and control circuit 204: the tip
210: base plate for packaging 220: sealing
230: metal level 250: electrostatic charge
Embodiment
Fig. 7 shows the structural representation of the slide fingerprint sensing chip of preferred embodiment of the present invention.As shown in Figure 7, a kind of structure with slide fingerprint sensing chip of anti-static function of present embodiment comprises semiconductor substrate 10, a slide fingerprint sensing chip 20, a polymer material layer 30 and a static discharge metal level 40.Slide fingerprint sensing chip 20 is formed on the described semiconductor substrate 10, and comprises a sweep fingerprint sensor 21 and a peripheral circuit layer 22.Described sweep fingerprint sensor 21 has an exposed fingerprint sensing district 21A, slides through a plurality of fragment fingerprint images of the finger of one on it in order to sensing.Fingerprint sensing district 21A is normally protected by a dielectric layer (not shown), and dielectric layer is by the made stiff materials layer of silicon nitride, silit, aluminium oxide or diamond for example.Peripheral circuit layer 22 comprises and reads and control circuit, for example Gain Adjustable formula amplifier, analog-digital converter and steering logic etc.Described peripheral circuit layer 22 is formed on the described semiconductor substrate 10, and is positioned at described sweep fingerprint sensor 21 sides, in order to control the running of described sweep fingerprint sensor 21, and also can be in order to handle described fragment fingerprint image.Described peripheral circuit floor 22 has an exposed routing district (not shown) and uses for I/O.
Described polymer material layer 30 is arranged on the described peripheral circuit layer 22, and has a planarized surface 31.Described polymer material layer is made by polyimide (polyimide), benzyl ring butylene (BCB:Benzocyclobutene), epoxy resin-matrix photoresistance (SU-8) or other suitable material.In present embodiment, the thickness of described polymer material layer is greater than 2 microns, preferably between 2 microns to 5 microns.In the present embodiment, the pixel of glide direction is less than 32.Described static discharge metal level 40 is arranged on the described planarized surface 31 of described polymer material layer, uses for static discharge and uses.Described static discharge metal level can be to be made by aluminium, gold or other suitable material, and its thickness is at least greater than 1 micron.The static discharge metal level is grounded to carry out static discharge.
The synoptic diagram of the formation method of the slide fingerprint sensing chip of Fig. 8 A to 8C demonstration preferred embodiment of the present invention.Formation method with slide fingerprint sensing chip of anti-static function of the present invention may further comprise the steps.
At first, shown in Fig. 8 A, on a semiconductor substrate 10, form a slide fingerprint sensing chip 20.Described slide fingerprint sensing chip 20 comprises: a sweep fingerprint sensor 21, have an exposed fingerprint sensing district 21A, and slide through a plurality of fragment fingerprint images of the finger of one on it in order to sensing; One peripheral circuit layer 22 is formed on the described semiconductor substrate 10 and to be positioned at described sweep fingerprint sensor 21 other, in order to control a running of described sweep fingerprint sensor 21.
Then, shown in Fig. 8 B, form a polymer material layer 30 in described peripheral circuit layer 22, described polymer material layer 30 has a planarized surface 31.The practice of present embodiment is rotary coating one macromolecular material on described slide fingerprint sensing chip 20, make this macromolecular material sclerosis to form described polymer material layer 30 then, so that therefore described polymer material layer 30 has described planarized surface 31, then remove the described polymer material layer 30 of part, to expose described fingerprint sensing district 21A.Described macromolecular material is polyimide (polyimide), benzyl ring butylene (BCB:Benzocyclobutene), epoxy resin-matrix photoresistance (SU-8) or other suitable material.And the thickness of described polymer material layer 30 is greater than 2 microns, preferably between 2 microns to 5 microns.Perhaps, polymer material layer 30 also can be pasted or alternate manner is formed on the peripheral circuit layer 22.
Then, shown in Fig. 8 C, on the described planarized surface 31 of described polymer material layer 30, form a static discharge metal level 40 and use for static discharge.The generation type of static discharge metal level 40 has a variety of.Below only with an example explanation.At first, described planarized surface 31 and the described fingerprint sensing district 21A in described polymer material layer 30 goes up depositing metal layers 40.Then, remove the described metal level 40 that is positioned at the part on the described fingerprint sensing district 21A, use for static discharge as described static discharge metal level to stay remaining described metal level 40.Described metal level is made by aluminium, gold or other suitable material, and its thickness is in fact at least greater than 1 micron.
In sum; antistatic protection design of the present invention is to utilize rotating coating that macromolecular material (is mainly BCB in the present invention on fingerprint sensor earlier; also can be materials such as SU-8 and Polyimide) be formed on the fingerprint sensor, with photoetching process fingerprint sensing district and routing district (not shown) exposure imaging are exposed out again.In order effectively to reduce the effect of stray capacitance, the thickness of macromolecular material of the present invention after completing is more preferably greater than 2 microns, and then depositing metal layers (metals such as aluminium or gold) is removed the metal in fingerprint sensing district with photoetching process again, finishes design of the present invention.
Therefore, the present invention utilizes increases by a polymer material layer between the dielectric layer of metal level and slide fingerprint sensing chip, this structure Design can because of the spacing change of the mimic channel of metal level and peripheral circuit layer greatly, and reduced the generation of stray capacitance.The macromolecular material of the low dielectric radio of selection can further reduce the influence of stray capacitance again.And the production method of described macromolecular material utilizes the mode of rotary coating to finish, and can form quite smooth surface at chip surface, even original chip surface is uneven, also can reach smooth surface by the method.Therefore also be difficult for producing the problem of point discharge between the surface of metal level and polymer material layer, increased the anlistatig ability of circuit.
The foregoing description only is used to illustrate the present invention, is not to be used to limit the present invention.
Claims (14)
1. structure with slide fingerprint sensing chip of anti-static function is characterized in that comprising:
The semiconductor substrate;
One slide fingerprint sensing chip, be formed on the described semiconductor substrate, this slide fingerprint sensing chip comprises: a sweep fingerprint sensor and a peripheral circuit layer, wherein, described sweep fingerprint sensor, have an exposed fingerprint sensing district, slide through a plurality of fragment fingerprint images of the finger of one on it in order to sensing; Described peripheral circuit layer is formed on the described semiconductor substrate and is positioned at by the described sweep fingerprint sensor, in order to control a running of described sweep fingerprint sensor;
One polymer material layer is arranged on the described peripheral circuit layer, and has a planarized surface;
One static discharge metal level is arranged on the described planarized surface of described polymer material layer, and this static discharge metal level is grounded, and uses for static discharge and uses.
2. the structure with slide fingerprint sensing chip of anti-static function according to claim 1 is characterized in that described polymer material layer made by polyimide, benzyl ring butylene or epoxy resin-matrix photoresistance.
3. the structure with slide fingerprint sensing chip of anti-static function according to claim 1, the thickness that it is characterized in that described polymer material layer is greater than 2 microns.
4. the structure with slide fingerprint sensing chip of anti-static function according to claim 1, the thickness that it is characterized in that described polymer material layer is between 2 microns to 5 microns.
5. the structure with slide fingerprint sensing chip of anti-static function according to claim 1 is characterized in that described static discharge metal level made by aluminium or gold.
6. the structure with slide fingerprint sensing chip of anti-static function according to claim 1 is characterized in that described static discharge metal layer thickness is greater than 1 micron.
7. formation method with slide fingerprint sensing chip of anti-static function is characterized in that may further comprise the steps:
A. on a semiconductor substrate, form a slide fingerprint sensing chip, wherein said slide fingerprint sensing chip comprises: a sweep fingerprint sensor, have an exposed fingerprint sensing district, slide through a plurality of fragment fingerprint images of the finger of one on it in order to sensing; One peripheral circuit layer is formed on the described semiconductor substrate and is positioned at by the described sweep fingerprint sensor, in order to control a running of described sweep fingerprint sensor;
B. form a polymer material layer in described peripheral circuit layer, described polymer material layer has a planarized surface;
C. form a static discharge metal level on the described planarized surface of described polymer material layer, this static discharge metal level is grounded, and uses for static discharge.
8. the formation method with slide fingerprint sensing chip of anti-static function according to claim 7 is characterized in that described step b comprises:
B1. rotary coating one macromolecular material on described slide fingerprint sensing chip;
B2. make described macromolecular material sclerosis to form described polymer material layer, make described polymer material layer therefore have described planarized surface;
B3. remove the described polymer material layer of part, to expose described fingerprint sensing district.
9. the formation method with slide fingerprint sensing chip of anti-static function according to claim 7 is characterized in that described polymer material layer made by polyimide, benzyl ring butylene or epoxy resin-matrix photoresistance.
10. the formation method with slide fingerprint sensing chip of anti-static function according to claim 7, the thickness that it is characterized in that described polymer material layer is greater than 2 microns.
11. the formation method with slide fingerprint sensing chip of anti-static function according to claim 7, the thickness that it is characterized in that described polymer material layer is between 2 microns to 5 microns.
12. the formation method with slide fingerprint sensing chip of anti-static function according to claim 7 is characterized in that described static discharge metal level made by aluminium or gold.
13. the formation method with slide fingerprint sensing chip of anti-static function according to claim 7 is characterized in that described static discharge metal layer thickness is greater than 1 micron.
14. the formation method with slide fingerprint sensing chip of anti-static function according to claim 7 is characterized in that described step c comprises:
C1. deposition one metal level in the described planarized surface of described polymer material layer and described fingerprint sensing district;
C2. remove the described metal level of part that is positioned in the described fingerprint sensing district, use for static discharge as described static discharge metal level to stay remaining described metal level.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2005100851438A CN100369048C (en) | 2005-07-21 | 2005-07-21 | Structure of slide fingerprint sensing chip with anti-static function and forming method |
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| CNB2005100851438A CN100369048C (en) | 2005-07-21 | 2005-07-21 | Structure of slide fingerprint sensing chip with anti-static function and forming method |
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| CN100369048C true CN100369048C (en) | 2008-02-13 |
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| CNB2005100851438A Expired - Fee Related CN100369048C (en) | 2005-07-21 | 2005-07-21 | Structure of slide fingerprint sensing chip with anti-static function and forming method |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103824071A (en) * | 2014-02-21 | 2014-05-28 | 江苏恒成高科信息科技有限公司 | Electrostatic capacitance detecting type fingerprint reading sensor with electrostatic discharge function |
| CN104123564A (en) * | 2014-07-23 | 2014-10-29 | 上海思立微电子科技有限公司 | Fingerprint identification device and assembly with coated film protective layer |
| CN105320922B (en) * | 2014-08-04 | 2018-07-06 | 旭景科技股份有限公司 | For strengthening the structure of the method for fingerprint sensor surface characteristic and application this method |
| CN104182737B (en) * | 2014-08-26 | 2017-09-15 | 南昌欧菲生物识别技术有限公司 | Fingerprint Identification sensor encapsulating structure and method for packing |
| CN106295462A (en) * | 2015-05-14 | 2017-01-04 | 上海箩箕技术有限公司 | Fingerprint imaging module and preparation method thereof |
| TWI584418B (en) * | 2016-05-16 | 2017-05-21 | Egis Tech Inc | Fingerprint sensor and packaging method thereof |
| CN112996945B (en) * | 2018-07-10 | 2024-04-05 | 耐科思特生物识别集团股份公司 | Heat conduction and protective coating for electronic equipment |
| CN110534504A (en) * | 2019-09-16 | 2019-12-03 | 柳州梓博科技有限公司 | A kind of chip and electronic equipment |
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| US6091082A (en) * | 1998-02-17 | 2000-07-18 | Stmicroelectronics, Inc. | Electrostatic discharge protection for integrated circuit sensor passivation |
| CN1549190A (en) * | 2003-05-06 | 2004-11-24 | 祥群科技股份有限公司 | Capacitive fingerprint sensing device and producing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US6091082A (en) * | 1998-02-17 | 2000-07-18 | Stmicroelectronics, Inc. | Electrostatic discharge protection for integrated circuit sensor passivation |
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| CN1549190A (en) * | 2003-05-06 | 2004-11-24 | 祥群科技股份有限公司 | Capacitive fingerprint sensing device and producing method thereof |
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