CN100350640C - 具有光子晶体的发光二极管及其装置 - Google Patents
具有光子晶体的发光二极管及其装置 Download PDFInfo
- Publication number
- CN100350640C CN100350640C CNB200410001988XA CN200410001988A CN100350640C CN 100350640 C CN100350640 C CN 100350640C CN B200410001988X A CNB200410001988X A CN B200410001988XA CN 200410001988 A CN200410001988 A CN 200410001988A CN 100350640 C CN100350640 C CN 100350640C
- Authority
- CN
- China
- Prior art keywords
- light
- emitting diode
- photonic crystal
- semiconductor layer
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims abstract description 58
- 239000004038 photonic crystal Substances 0.000 claims abstract description 79
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 230000000737 periodic effect Effects 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 29
- 239000003989 dielectric material Substances 0.000 claims description 13
- 150000002739 metals Chemical class 0.000 claims description 13
- 239000004575 stone Substances 0.000 claims description 11
- 230000017525 heat dissipation Effects 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 abstract 3
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- 238000004891 communication Methods 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
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- 230000010287 polarization Effects 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
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- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 102000040350 B family Human genes 0.000 description 1
- 108091072128 B family Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical group [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
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Abstract
Description
Claims (29)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200410001988XA CN100350640C (zh) | 2004-01-16 | 2004-01-16 | 具有光子晶体的发光二极管及其装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200410001988XA CN100350640C (zh) | 2004-01-16 | 2004-01-16 | 具有光子晶体的发光二极管及其装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1641898A CN1641898A (zh) | 2005-07-20 |
CN100350640C true CN100350640C (zh) | 2007-11-21 |
Family
ID=34867244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410001988XA Expired - Fee Related CN100350640C (zh) | 2004-01-16 | 2004-01-16 | 具有光子晶体的发光二极管及其装置 |
Country Status (1)
Country | Link |
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CN (1) | CN100350640C (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101000949B (zh) * | 2006-01-09 | 2010-05-12 | 北京交通大学 | 利用光子晶体多层膜提高有机电致发光器件色纯度的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945964A (ja) * | 1995-07-26 | 1997-02-14 | Stanley Electric Co Ltd | チップマウント用led素子及びその製造方法 |
US5955749A (en) * | 1996-12-02 | 1999-09-21 | Massachusetts Institute Of Technology | Light emitting device utilizing a periodic dielectric structure |
US5998298A (en) * | 1998-04-28 | 1999-12-07 | Sandia Corporation | Use of chemical-mechanical polishing for fabricating photonic bandgap structures |
JP2002091344A (ja) * | 2000-09-14 | 2002-03-27 | Canon Inc | 表示装置 |
-
2004
- 2004-01-16 CN CNB200410001988XA patent/CN100350640C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0945964A (ja) * | 1995-07-26 | 1997-02-14 | Stanley Electric Co Ltd | チップマウント用led素子及びその製造方法 |
US5955749A (en) * | 1996-12-02 | 1999-09-21 | Massachusetts Institute Of Technology | Light emitting device utilizing a periodic dielectric structure |
US5998298A (en) * | 1998-04-28 | 1999-12-07 | Sandia Corporation | Use of chemical-mechanical polishing for fabricating photonic bandgap structures |
JP2002091344A (ja) * | 2000-09-14 | 2002-03-27 | Canon Inc | 表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1641898A (zh) | 2005-07-20 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: CHINA FATO MECHANICAL + ELECTRICAL EQUIPMENT GROUP Free format text: FORMER OWNER: HANXIN PHOTOELECTRIC CO., LTD. Effective date: 20110314 |
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C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee |
Owner name: HANXIN PHOTOELECTRIC CO., LTD. Free format text: FORMER NAME: HANXIN ENTERPRISE CO., LTD. |
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COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TAIWAN PROVINCE, CHINA TO: C.C.WU BUILDING, 302 HENNESSY ROAD, WANCHAI, HONG KONG |
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CP01 | Change in the name or title of a patent holder |
Address after: Taiwan, China Patentee after: Hansen Au Optronics Co. Address before: Taiwan, China Patentee before: HANXIN ENTERPRISE Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20110314 Address after: Integrated center, 302 Hennessy Road, Wan Chai, Hongkong Patentee after: Huatong Group Co.,Ltd. Address before: Taiwan, China Patentee before: Hansen Au Optronics Co. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071121 Termination date: 20220116 |
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CF01 | Termination of patent right due to non-payment of annual fee |