CN100350558C - Parallel probe driven scan plasma processing device and processing method - Google Patents
Parallel probe driven scan plasma processing device and processing method Download PDFInfo
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- CN100350558C CN100350558C CNB2005100834235A CN200510083423A CN100350558C CN 100350558 C CN100350558 C CN 100350558C CN B2005100834235 A CNB2005100834235 A CN B2005100834235A CN 200510083423 A CN200510083423 A CN 200510083423A CN 100350558 C CN100350558 C CN 100350558C
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Abstract
The present invention relates to the etching processing technology of plasma. The device comprises a plasma micro discharge device, a hollow probe, and a three-dimensional operating platform for placing a work-piece to be processed, wherein the plasma micro discharge device forms an opening funnel shape and is arranged at the end head of a cantilever beam; the hollow probe is connected to the outlet position of the funnel. The cantilever beam is provided with a main piezoelectric ceramic brake, a machine base is provided with an auxiliary piezoelectric ceramic brake, and each brake is integrated with a sensor and a driver. A signal generator generates an excitation signal which is loaded on the driver, so that the cantilever beam vibrates. A signal on the sensor is input into a phase-locking amplifier to be magnified, and is transferred in a computer to be processed, and the detection and the adjustment for distance between a needle tip and the surface of the work piece are realized, so that the work piece remains constant in the process of processing. When the work piece is processed by using a parallel probe array mode, each probe is provided with a separate power supply loop. The device is suitable for the etching processing of a small scale and diversified micro nanometer devices, and has high etching precision.
Description
Technical field
The present invention relates to the maskless plasma process technology in the Micrometer-Nanometer Processing Technology, especially based on the scan plasma lithographic technique of parallel probe technology.
Background technology
Advantages such as in semiconductor technology and MEMS (micro electro mechanical system) (MEMS) field, the plasma process technology is because the etching precision height, and working ability is strong are widely used, as the etching of various micro/nano films, deposit, growth etc.In actual applications, usually need on sample surfaces, etching process different depth, difform figure.Applied in the traditional plasma etching is macroscopical plasma, and promptly action of plasma if carry out selective etch, must adopt mask to realize on the whole sample surface, is not suitable for the processing of many kinds, the micro-nano device of small lot.
At the problems referred to above, in recent years, a lot of scholars have carried out extensive studies, and proposed many multi-form, based on the small plasma processing method of different principle.These small plasma processing methods roughly can be divided into scan mode and two types of direct etching modes.Comparatively speaking, directly the etching mode is simple in structure, and etch rate is fast, but the etching pattern precision is not high, and graphical ability is relatively poor; Scan mode complex structure, but etching pattern precision height, the graphics processing good reproducibility, graphical ability is strong, has very much a development potentiality.Directly the etching mode is to utilize the geometry of device self, produces reactive plasma in the regional area of sample surfaces, thereby realizes the direct etching processing of sample surfaces microcell.1996, magazine " MEMS (micro electro mechanical system) " discloses a kind of microdischarge devices (C.G.Wilson and Y.B.Gianchandan that utilizes planar structure on silicon chip, " Silicon Micromachining Using In Situ DCMicroplasmas " J.Micro-electromech.Syst, vol.10, no.1, Mar.1996, pp.50-54), it can realize the etching processing to zones of different, etch rate reaches 6-17 μ m/min, the etching pattern precision reaches 10 μ m, and its shortcoming is to realize disposable etching, not reproducible use.Calendar year 2001, disclose people such as sankaran on " Applied Physics wall bulletin " and utilized the microdischarge devices that has circle or bar shaped micropore, it is pressed close to silicon chip, can realize high speed etching to silicon chip, but but the graphic structure of etching depends on the geometry of microdischarge devices, be not suitable for processed complex figure (R.M.Sankaran and K.P.Giapis, " Maskless etching of silicon usingpatterned microdischarges " Appl.Phys.Lett., vol.79,2001, pp.593-595).Scan mode is to utilize device geometries or other modes that the effective etching composition in the reactive plasma that produces is constrained to tiny reaction particle line, utilizes this line to realize direct etching process technology on sample.Calendar year 2001, the micropore that people such as J.Voigt utilize microtubule and submicron-scale is disclosed on the magazine " microelectronic engineering ", the downstream aura of microwave plasma is retrained, form small reaction particle line, be incorporated into silicon chip surface, realize etching method for processing (J.Voigt, F.Shi, K.Edinger, et al., " Nanofabrication with scanningnanonozzle ' Nanojet ' " Microelectronic Engineering vol.57-58,2001, pp.1035-1042), its graphics processing minimum feature is 200nm.The shortcoming of this method is: utilize the inside and outside gas pressure difference of microchannel that plasma is incorporated into sample surfaces, therefore device is complicated, vacuum degree is required high; In addition, though may realize parallel processing, each probe can't be consistent with sample interval, and the feeding of single needle point can't realize independent control.Concluded, these small method for etching plasma have been realized the non-mask etching processing of sample to a certain extent, but still have complex structure, are not easy to realize problems such as parallel processing.
Summary of the invention
The objective of the invention is to, at deficiency of the prior art, provide a kind of with scan-probe technology and the small plasma technique scan plasma processing device of the capable probe actuation of union of sets mutually, not only structure is comparatively simple, and can improve machining accuracy, thereby satisfy the requirement that micro-nano device fabrication is used.
The scan plasma processing device that parallel probe of the present invention drives, include a plasma micro discharge device and a hollow probe, and the scanning workbench that can do three-dimensional motion that is used for placing work piece, it is characterized in that, described plasma micro discharge device is uncovered infundibulate, it places the cantilever beam termination by sole plate supports, and the inlet diameter of this funnel is 50-500 μ m; Described hollow probe is connected the exit of this funnel, and the probe diameter of bore is 0.1-2 μ m, and the needle point height is 30-300 μ m; The funnel inwall is the conductor metal layer of thickness between 0.1-2 μ m, be used as bottom electrode (negative electrode), around the funnel inlet, be provided with the conductor metal flat board as top electrode (anode), be connected with plain conductor on two electrodes respectively, with output voltage for the 300-600V external dc power is configured for the current supply circuit of plasma micro discharge device, in this loop, be in series with the current-limiting resistance of Standard resistance range at 100k Ω-2M Ω.On cantilever beam, be provided with the main piezoceramics film brake that to realize the little feeding of probe, on support, be provided with pair piezoelectric ceramic brake that reference signal detection is provided to main piezoceramics film brake.Each brake all integrated sensor and driver in one, described main piezoceramics film brake and pair piezoelectric ceramic brake constitute by three-layer metal electrode layer and two-layer piezoceramics film layer, wherein, the 1st layer and the 5th layer is upper and lower electrode, and the 3rd layer is intermediate electrode layer; The 2nd layer is the piezoceramics film layer as driver, and the 4th layer is the piezoceramics film layer as transducer.Be connected with plain conductor in two brakes, on the bottom electrode respectively, with signal generator and output voltage be that the external dc power of 12V constitutes energized circuit (being driver functions), be connected with plain conductor respectively on the upper and lower electrode of brake, with measuring amplifier and output voltage be that the external dc power of 12V constitute to be measured loop (being sensor function).Energized circuit and measure the external dc power power supply that the loop can a shared 12V.
In the said apparatus, for the situation with parallel probe array, each probe all has independently current supply circuit.
The processing method of the scan plasma processing device that parallel probe of the present invention drives comprises and utilizes the reactive plasma that produces in the plasma micro discharge device, imports the work piece surface via needle point place micropore and carries out etching processing; Utilize computer-controlled three-dimensional working platform to do scanning motion by specified path, it is characterized in that: the needle point that penetrates reactive plasma forcing in the process to the work piece surface, utilize the piezoelectric ceramic brake in real time the spacing on needle point and work piece surface to be detected and adjusts, make between the two apart from keeping constant; Parallelly add man-hour what adopt the parallel probe array, according to different processing needs, open or close the loading power switch of relevant position probe, its concrete operations step is:
(1) whole device is put into vacuum chamber, cantilever beam is fixed on the support, and work piece is placed on the three-dimensional working platform, and vacuum chamber is vacuumized, and making its vacuum degree is 10
-2-10
-4Torr;
(2) to be pressed in the purity between the 10-100Torr be 100% reacting gas to fill gas, and the reacting gas type is selected according to processed specimen material, for example during the machine silicon material, and the optional SF of reacting gas
6
(3) position of adjustment three-dimensional working platform, the distance between coarse adjustment probe tip and workpiece makes the distance between surface of the work and the probe tip narrow down to 10-100 μ m;
(4) from the frequency and the amplitude of computer input signal, produce control signal, drive signal generator makes it produce frequency 1-40kHz, and the sinusoidal excitation signal of amplitude 1-12V is loaded on the driver on foundation brakes and pair brake, makes the cantilever beam vibration;
(5) utilize the output signal of computer acquisition lock-in amplifier: because driver produces deformation adding under the pumping signal effect on the foundation brakes, deformation takes place in transducer on it simultaneously, produce and cantilever beam amplitude correlated current signal, pay brake and adding under the pumping signal effect, the transducer on it produces reference signal; The input that the output signal of two brake upper sensors is sent into measuring amplifier respectively compares, and amplifies to enter with lock-in amplifier after the difference of output two signals and carry out phase-locked amplification,
(6) utilize computer analysis: computer is analyzed by the size to input signal, relation according to signal and cantilever beam vibration amplitude, calculate the distance of probe and needle point, and constantly adjustment makes the distance between surface of the work and the probe tip narrow down to 10-100nm;
(7) the feeding process of enforcement needle point: on plasma micro discharge device, load DC power supply, on-load voltage is between 300-600V, make reacting gas under electric field action, produce plasma, effective etching composition wherein (as mainly make active fluorine atom in silicon etching) is incorporated into sample surfaces by hollow needle point, the etching processing of the local microcell of realization;
(8) moving three dimension workbench makes probe tip do scanning motion on the work piece surface.
(9) parallelly add man-hour what adopt the parallel probe array,, open or close the loading power switch of relevant position probe according to different graphics processing requirements.
The scan plasma processing device that parallel probe of the present invention drives, when work, at first in vacuum chamber, fill reacting gas, and between upper/lower electrode, load DC power supply in certain air pressure, under electric field action, the reacting gas ionization in hollow cathode zone produces reactive plasma.Utilize hollow needle point then, the active component in the reactive plasma is incorporated into sample surfaces, realize the direct etching in local micro-nano zone.And pass through from exciting, probe carries out from detecting with a certain natural frequency vibration and then to Oscillation Amplitude.
The scan plasma processing device that parallel probe of the present invention drives in actual use, can be discharge voltage and discharging current by the discharge parameter that changes plasma micro discharge device, improves the concentration of reactive plasma, and then improves etch rate.When needle point and sample distance than needle point on pore size hour, the precision of etching figure is identical with pore size.Probe carries out finishing probe to the self-feed between the sample from detecting with a certain natural frequency vibration and then to Oscillation Amplitude.When the distance of probe and sample when pore size arrives correct position, promptly to small plasma reaction loading power, realize the direct etching of sample surfaces.
The present invention since on scan-probe integrated plasma micro discharge device, required device is simple, can process arbitrary graphic, the machining accuracy height.The processing of different materials only needs to adopt corresponding reacting gas to realize; Be applicable to the processing of the micro-nano device of many kinds, small lot, can etch the structure of arbitrary graphic, easy to process; Realize the self-feed of single probe and self-driven by being integrated in piezoceramics film on the micro-cantilever, and can pass through probe array, realize and processing of line scanning etching or selectivity processing.For example, having under the situation of a plurality of probes, need only add man-hour to the zone at a certain probe place, then can make the plasma micro discharge device discharge of this probe, carry out etching processing, and plasma micro discharge device is then closed in the zone that other need not to process, thereby finally is implemented in processing simultaneously on the zones of different on the same sample.
Experiment shows, utilizes apparatus of the present invention, and producible reaction and plasma bulk concentration is 1 * 10
14-1 * 10
16Cm
-3Between, its etch rate can reach 10-100nm/min; When micro-pore diameter during at 0.1-2 μ m, the minimum feature of etching figure is 0.12-2.5 μ m.
By the following examples and accompanying drawing make and further specifying.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment of the scan plasma processing device that drives of parallel probe of the present invention.
Fig. 2 is the M-M cutaway view of Fig. 1.
Fig. 3 is the structural representation with 4 groups of parallel probe embodiment.
Fig. 4 is the schematic block diagram of the control circuit of the scan plasma processing device that drives of parallel probe of the present invention.
Embodiment
Referring to Fig. 1 and Fig. 2, expressed a kind of structural representation among the figure with scan plasma processing device of single probe actuation, 8 are the side's of being funnel shaped plasma micro discharge device, and it places a cantilever beam termination, and hollow probe 6 (in the circular dashed line frame among Fig. 2) is connected the exit of funnel.Whole micro-cantilever is supported by support 1.3 and 5 are respectively the upper/lower electrode layer of plasma micro discharge device, and 4 is the insulating barrier of plasma micro discharge device; Thickness of insulating layer is between 10-100 μ m, and material can be selected any in polyimides, BCB resin and the epoxy resin etc., and electrode layers thickness is between 0.1-2 μ m, and what material can be in the metals such as copper, nickel, aluminium is a kind of.The opening diameter of funnel is between 50-500 μ m.The pinhole diameter of hollow probe 6 is 0.1-2 μ m, between the needle point height 30-300 μ m, is used for plasma is imported to work piece surface 7.The base material of piezoelectric ceramic cantilever beam 2 is a silicon dioxide layer, also can adopt materials such as silicon or silicon nitride, and its thickness is 0.5-2 μ m.Cantilever beam 2 is provided with double-deck main piezoceramics film brake 17 (in the square frame of broken lines among Fig. 2), support 1 is provided with pays piezoceramics film brake 10 (in the frame of broken lines among Fig. 1), each brake constitutes by three-layer metal electrode layer and two-layer piezoceramics layer, and integrated drive and transducer are in one; Wherein, the 1st layer and the 5th layer is upper and lower electrode, and the 3rd layer is target, and electrode layers thickness is between 0.1-2 μ m, and what material can be in the metals such as copper, nickel, aluminium is a kind of; The 2nd layer and the 4th layer is piezoceramics film, thickness 0.1-3 μ m, and wherein the 2nd layer as driver, and the 4th layer as transducer; Be connected with plain conductor on the electrode of two piezoceramics film brakes respectively, constitute current supply circuit with external power source.The piezoelectric ceramic cantilever beam is used to realize needle point 6 and the feeding of work piece 7 and the detection of needle point and work piece spacing, realizes by two integrated on it piezoelectric ceramic brakes.Brake is divided into foundation brakes 17 and pays brake 10, and foundation brakes 17 provides cantilever beam in the detection that adds Oscillation Amplitude under the pumping signal, and paying brake 10 is to provide reference signal in testing process.14 is signal generator, is used for producing the pumping signal of drive pressure electroceramics brake driver, is carried in via electric wire 15 and 22 on the driver of foundation brakes 17, is carried on the driver of paying brake 10 via electric wire 15 and 13, makes the cantilever beam vibration.12 is measuring amplifier, be used for detecting piezoelectric ceramic brake signal of sensor, the measuring-signal of transducer is via electric wire 19 and 15 input measurement amplifiers in the foundation brakes, and the reference signal of paying transducer generation in the brake is via electric wire 11 and 15 input measurement amplifiers.20 is DC power supply, is connected with the upper and lower electrode of plasma micro discharge device with 15 by plain conductor 18.21 is the current-limiting resistance of connecting with DC power supply.Three-dimensional working platform 9 is used to place processed sample 7, and does three-dimensional moving in the process of forcing into and scan etching processing of sample and needle point.Peripheral frame of broken lines signal adds the vacuum chamber 16 in man-hour among Fig. 1, and this vacuum chamber assurance whole system is worked under the reacting gas atmosphere of certain vacuum degree.
Referring to Fig. 3, parallel 4 groups of plasma micro discharge devices and probe in the present embodiment, every group is equipped with independently current supply circuit, can realize parallel etching processing, concrete grammar is as follows: at first adopt method as shown in Figure 1 to finish the feeding of four probes to work piece simultaneously under the control of computer, controlling three-dimensional working platform then lines by line scan mobile, when etching processing need be carried out in the position that a certain probe moves, then by computer control, make the plasma micro discharge device on this probe produce plasma, finish processing; In the zone that does not process, then close plasma micro discharge device.By said method, under the control of computer, can be implemented in and process multiple figure on the same work piece on the zones of different simultaneously.
Referring to Fig. 4, entire processing apparatus is divided into three current supply circuits: wherein energized circuit and the power supply of measuring the loop are the 12V power supply, and wherein driver links to each other the formation energized circuit in signal generator and the piezoelectric ceramic brake with the 12V power supply by plain conductor; Transducer links to each other with the 12V power supply by plain conductor in measuring amplifier and the piezoelectric ceramic brake, constitutes to measure the loop; Plasma micro discharge device and 300-600V DC power supply constitute plasma the loop take place.Three loops all link to each other with computer, form complete power supply and the control system of a cover.The piezoelectric ceramic brake is divided into foundation brakes 17 and pays brake 10 on the micro-cantilever.Foundation brakes 17 provides cantilever beam in the detection that adds Oscillation Amplitude under the pumping signal, pays brake 10 and a pair detection signal is provided for measuring amplifier 12.14 is signal generator, link to each other with the 12V power supply by lead, be used to produce the signal of driver on the excitation piezoelectric ceramic brake, by the driver on plain conductor 15 and the 22 excitation foundation brakes 17, make the cantilever beam vibration, driver by on plain conductor 15 and the 13 excitation pair brakes 10 makes the transducer on it produce the corresponding reference signal.12 is measuring amplifier, link to each other with the 12V power supply by plain conductor, be used to detect the output signal of piezoelectric ceramic brake upper sensor,, measure the signal of paying brake 10 upper sensors by plain conductor 14 and 11 by the signal of plain conductor 15 and 19 measurement foundation brakes, 17 upper sensors.The groundwork flow process is as follows: load the 12V DC power supply on signal generator and measuring amplifier, under computer control, signal generator produces pumping signal, is loaded on the driver of foundation brakes and pair brake, makes the cantilever beam vibration; Compare by the output signal of measuring amplifier foundation brakes and pair brake upper sensor, output comprises the signal of cantilever beam vibration amplitude information, by lock-in amplifier phase-locked amplification is carried out in the output of measuring amplifier, output and the information-related signal of cantilever beam vibration amplitude, and send into computer and analyze and handle, computer is after analyzing and handling, relation according to signal and vibration amplitude, calculate the distance of cantilever beam and sample room, adjust the position of three-dimensional working platform then, make needle point and sample interval, satisfy the requirement of processing: 10-100nm loads DC power supply, between the voltage 300-600V between the upper/lower electrode of plasma micro discharge device, inspire reactive plasma, finish the processing of scanning etching.In the course of processing, utilize computer real-time to detect the distance of needle point and workpiece to be machined, when distance changes,, make it to keep constant by adjusting the position of three-dimensional working platform.
A kind of main processes of making the embodiment of the scan plasma processing device that this parallel probe drives is provided below, and whole device is to process on a circular silicon chip:
(1) with silicon chip as pedestal, the thermal oxidation silicon chip forms silicon dioxide layer;
(2) utilize the KOH etching liquid to carry out anisotropic etching, obtain the cavity of inverted pyramid shape.
(3) remove remaining silicon dioxide layer, thermal oxidation forms silicon dioxide layer
(4) deposit nickel film on silicon dioxide layer is as lower electrode layer.
(5) on electrode, prepare piezoceramics film.
(6) deposit target
(7) preparation piezoceramics film
(8) deposit top electrode
(9) etching piezoceramics film top electrode figure.
(10) etching target figure
(11) etching bottom electrode figure
(12) preparation polyimide film,
(13) deposit nickel film on polyimide film.
(14) etching polyimide film
(15) etching upper electrode layer
(16) deposition silicon nitride film overleaf
(17) silicon at the etching back side discharges socle beam probe from silicon materials.
(18) silicon dioxide layer on etching probe tip surface obtains required hollow needle point.
(19) the nickel film at micropore place on the etching needle point, the place processes micropore at needle point.
Provide the concrete operations step of utilizing said apparatus that one sample (silicon chip) is processed below:
(1) whole device is put into vacuum chamber 16, cantilever beam is fixed on the support, and work piece 7 is placed on the three-dimensional working platform 9, and vacuum chamber is vacuumized, and making its vacuum degree is 10
-2-10
-4Torr;
(2) to be pressed in the purity between the 10-100Torr be 100% SF to fill gas
6Gas;
(3) position of adjustment three-dimensional working platform 9, the distance that coarse adjustment probe tip 6 and workpiece are 7 makes the distance between surface of the work and the probe tip narrow down to 10-100 μ m;
(4) from the frequency and the amplitude of computer input signal, produce control signal, drive signal generator 14 produces frequency 1-40kHz, and the sinusoidal excitation signal of amplitude 1-12V is loaded on the driver on foundation brakes 17 and pair brake 10, makes the cantilever beam vibration;
(5) utilize the output signal of computer acquisition lock-in amplifier: because driver produces deformation adding under the pumping signal effect on the foundation brakes 17, deformation takes place in transducer on it simultaneously, produce the current signal relevant with the cantilever beam amplitude, pay brake 10 and adding under the pumping signal effect, the transducer on it produces reference signal; The input that the output signal of two brake upper sensors is sent into measuring amplifier 12 respectively compares, and amplifies to enter with lock-in amplifier after the difference of output two signals and carry out phase-locked amplification;
(6) utilize computer analysis: computer is analyzed by the size to input signal, relation according to signal and cantilever beam vibration amplitude, calculate the distance of probe 6 and needle point 7, and constantly adjustment makes the distance between surface of the work and the probe tip narrow down to 10-100nm;
(7) the feeding process of enforcement needle point: on plasma micro discharge device 8, load DC power supply 20, on-load voltage is between 300-600V, make reacting gas under electric field action, produce plasma, effective etching composition wherein (as mainly make active fluorine atom in silicon etching) is incorporated into sample 7 surfaces by hollow needle point 6, realizes the etching processing of local microcell;
(8) the moving three dimension workbench 9, make probe tip do scanning motion on the work piece surface.
(9) parallelly add man-hour what adopt the parallel probe array,, open or close the loading power switch of relevant position probe according to different graphics processing requirements.
Claims (5)
1. the scan plasma processing device that drives of a parallel probe, include a plasma micro discharge device and a hollow probe, and the scanning workbench that can do three-dimensional motion that is used for placing work piece, it is characterized in that, described plasma micro discharge device is uncovered infundibulate, it places the cantilever beam termination by sole plate supports, and the inlet diameter of this funnel is 50-500 μ m; Described hollow probe is connected the exit of this funnel, and the probe diameter of bore is 0.1-2 μ m, and the needle point height is 30-300 μ m; The funnel inwall is the conductor metal layer of thickness between 0.1-2 μ m, be used as bottom electrode, around the funnel inlet, be provided with the conductor metal flat board as top electrode, be connected with plain conductor on two electrodes respectively, with output voltage for the 300-600V external dc power is configured for the current supply circuit of plasma micro discharge device, in this loop, be in series with the current-limiting resistance of Standard resistance range at 100k Ω-2M Ω; On cantilever beam, be provided with the main piezoceramics film brake that to realize the little feeding of probe, on support, be provided with the secondary piezoelectric ceramic brake that reference signal detection is provided to main piezoceramics film brake; Each brake all integrated sensor and driver in one, described main piezoceramics film brake and secondary piezoelectric ceramic brake constitute by three-layer metal electrode layer and two-layer piezoceramics film layer, wherein, the 1st layer and the 5th layer is upper and lower electrode, the 3rd layer is intermediate electrode layer, the 2nd layer is the piezoceramics film layer as driver, and the 4th layer is the piezoceramics film layer as transducer; Be connected with plain conductor in two brakes, on the bottom electrode respectively, with signal generator and output voltage be that the external dc power of 12V constitutes energized circuit, be connected with plain conductor respectively on the upper and lower electrode of brake, with measuring amplifier and output voltage be that the external dc power of 12V constitute to be measured the loop.
2. the scan plasma processing device that parallel probe as claimed in claim 1 drives is characterized in that, the external dc power of energized circuit and the measurement shared 12V in loop.
3. the scan plasma processing device that parallel probe as claimed in claim 1 drives is characterized in that for the situation with parallel probe array, each probe all has independently current supply circuit.
4. the processing method of the scan plasma processing device of a parallel probe driving comprises and utilizes the reactive plasma that produces in the plasma micro discharge device, imports the work piece surface via needle point place micropore and carries out etching processing; Utilize computer-controlled three-dimensional working platform to do scanning motion by specified path, it is characterized in that: the needle point that penetrates reactive plasma forcing in the process to the work piece surface, utilize the piezoelectric ceramic brake in real time the spacing on needle point and work piece surface to be detected and adjusts, make between the two apart from keeping constant; Parallelly add man-hour what adopt the parallel probe array, according to different processing needs, open or close the loading power switch of relevant position probe, its concrete operations step is:
(1) whole device is put into vacuum chamber, cantilever beam is fixed on the support, and work piece is placed on the three-dimensional working platform, and vacuum chamber is vacuumized, and making its vacuum degree is 10
-2-10
-4Torr;
(2) to be pressed in the purity between the 10-100Torr be 100% reacting gas to fill gas, and the reacting gas type is selected according to processed specimen material;
(3) position of adjustment three-dimensional working platform, the distance between coarse adjustment probe tip and workpiece makes the distance between surface of the work and the probe tip narrow down to 10-100 μ m;
(4) from the frequency and the amplitude of computer input signal, produce control signal, drive signal generator makes it produce frequency 1-40kHz, and the sinusoidal excitation signal of amplitude 1-12V is loaded on the driver on foundation brakes and the auxiliary brake, makes the cantilever beam vibration;
(5) utilize the output signal of computer acquisition lock-in amplifier: because driver produces deformation adding under the pumping signal effect on the foundation brakes, deformation takes place in transducer on it simultaneously, produce and cantilever beam amplitude correlated current signal, auxiliary brake is adding under the pumping signal effect, and the transducer on it produces reference signal; The input that the output signal of two brake upper sensors is sent into measuring amplifier respectively compares, and amplifies to enter with lock-in amplifier after the difference of output two signals and carry out phase-locked amplification;
(6) utilize computer analysis: computer is analyzed by the size to input signal, relation according to signal and cantilever beam vibration amplitude, calculate the distance of probe and needle point, and constantly adjustment makes the distance between surface of the work and the probe tip narrow down to 10-100nm;
(7) the feeding process of enforcement needle point: on plasma micro discharge device, load DC power supply, on-load voltage is between 300-600V, make reacting gas under electric field action, produce plasma, effective etching composition wherein is incorporated into sample surfaces by hollow needle point, realizes the etching processing of local microcell;
(8) moving three dimension workbench makes probe tip do scanning motion on the work piece surface.
5. the processing method of the scan plasma processing device that parallel probe as claimed in claim 4 drives, it is characterized in that, parallelly add man-hour what adopt the parallel probe array,, open or close the loading power switch of relevant position probe according to different graphics processing requirements.
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Non-Patent Citations (3)
| Title |
|---|
| Characterizaion of a DC plasma with hollow cathode effect. Petre A.R. et al.Romanian Reports in Physics,Vol.56. 2004 * |
| Development and Characterization of micromachanicalHollowcathode Plasma Display Devices. chen J et al.J of microelectro mechanical systems,Vol.11. 2002 * |
| Maskless etching of silicon using patterned microdischarges. Sankaaran R.M. et al.Applied physics letters,Vol.79. 2001 * |
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