CN100349266C - System and its method for high efficiency ozone water cleaning semiconductor wafer - Google Patents
System and its method for high efficiency ozone water cleaning semiconductor wafer Download PDFInfo
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- CN100349266C CN100349266C CNB2004100707451A CN200410070745A CN100349266C CN 100349266 C CN100349266 C CN 100349266C CN B2004100707451 A CNB2004100707451 A CN B2004100707451A CN 200410070745 A CN200410070745 A CN 200410070745A CN 100349266 C CN100349266 C CN 100349266C
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Abstract
The present invention relates to a system and a method for cleaning a semiconductor wafer by using high-efficiency ozone water. The method mainly utilizes a gas and liquid dissolved combining process of ultrapure water and vapor ozone in a mechanism environment with a gravity field, a cleaning solution concentration dynamic analysis process and information feedback control technique, and comprises a step for manufacturing liquid ozone water with a high concentration and high flow capacity into a cleaning solution, a step for cleaning the wafer and simultaneously dynamically monitoring water temperature and the concentrations of the ozone and additives in the solution, and a step for analyzing and feeding monitoring values, and adjusting and controlling the reaction so as to continuously and fast clean the wafer in a large quantity under the condition of keeping effective cleaning capability for the surface of the wafer. The system comprises a liquid ozone generating mechanism, a storage groove or a cleaning groove, an additive supplying mechanism, a monitoring and controlling mechanism, and an automatic feedback controlling mechanism.
Description
Technical field
The present invention relates to a kind of system and method thereof of high efficiency ozone water cleaning semiconductor wafer, it is the technical field that relates to the ozone clean of semiconductor crystal wafer, be meant that especially a kind of gas phase ozone and aqueous solvent height matter in a mechanism of utilizing passes and the ozone water solution of liquid phase dissolved formation cleaning solution, and ozone carries out oxidation reaction to the wafer material surface, cooperate in the manufacturing process for cleaning, Ozone Water cleaning solution concentration monitoring and concentration feedback control are kept, can be fast effectively with photoresistance or other organic attachment of semiconductor and relevant wafer of photoelectric process and glass baseplate surface, the ozone clean method and the device thereof that clean of oxidation Decomposition in addition.
Background technology
Press, the making of semiconductor crystal wafer, included each step in processing procedure: etching, oxidation, deposition, removing photoresistance and cmp etc., it all is the source of causing crystal column surface to pollute, and the pollution of crystal column surface, one to the biggest obstacle that is process quality and output, therefore, essential through the repeated multiple times manufacturing process for cleaning in the processing procedure of wafer.And (VLSI, development ULSI) require more to become harsh for the wafer cleanliness factor along with very lagre scale integrated circuit (VLSIC).
The purpose of crystal column surface cleaning is to remove all trace contaminants, comprises organic substance, metal attachments, particulate etc., and the thin oxide film (Thin oxide) of control crystal column surface formation, and keeps the smooth and anti-water of crystal column surface, anti-electricity condition.Known at present and often be used cleaning method can generally be divided into wet type and dry process.Wherein the dry type cleaning way is that the chemical reaction that utilizes high-energy (as heat energy, electric energy, radiant) to produce carries out the clean processing of surface knot.In addition this damp process utilizes solvent, acid solution, interfacial agent, mixes that pure water washs, washing and cleaning operation methods such as oxidation, etch and dissolving; This also is the most normal at present adopted cleaning way.As for the wet-cleaned technology is the general user of dealer at present, comprises following several method:
1.H
2SO
4/ H
2O
2@100～130 ℃ (SPM) claim again " Prianha Clean ", in order to remove organic pollution.
2.HF or (DHF) @20～25 ℃, main application is for corroding oxide-film (Silicon ozide) to dilute HF.
3.NH
4OH/H
2O
2/ H
2O@30～80 ℃ (APM) are used for buck and erosion surface, so that remove particulate; Simultaneously can remove organic substance and metal pollutant.
4.HCl/H
2O
2/ H
2O@65～85 ℃ (HPM) are mainly used in the removing metal pollutant.
5.H
2SO
4/ O
3/ H
2Organic substance, metal can be removed in O@90～120 ℃ (SOM), and reduce H
2SO
4Consumption.
Present again dealer often is used in the RCA standard cleaning method (RCAStandard Clean) of the cleaning step of leading portion silicon wafer process, promptly is that comprehensive aforementioned the 1st～4 kind of method is to carry out the wafer clean; Aforementioned these ablutions, removal for the organic photoresistance of crystal column surface and other solid contaminant, all can reach the clean effect of height, but in manufacturing process for cleaning, aforementioned RCA wafer cleaning procedure, according to estimates, essential consumption 45 every day, the ultra-pure water that 000 ton (water consumption every day that is equivalent to ten 8 o'clock wafer factories) is above, and at high temperature reach effect, employed H of while
2SO
4, HCl and H
2O
2Deng medicament, will produce up to a hundred tons of strong acid and strong base waste liquids (bazardous waste) discharging.These shortcomings often cause (Fab) air and exhaust treatment system burden overloading in the dust free room, and chemicals volatility at high temperature, make the composition concentration of cleaning liquid wayward, and its clean effect is lowered.
Moreover, " how riceization reaches processing procedure ", " green production " is common trend present and high-tech industry development in the future, comprise the rice semiconductor dark time, TFT-LCD, the III-Vs communication part, ultraprecise processing, how rice made, how technology such as rice electronic building brick, all actively towards hyperfine and super clean direction research and development, how in the riceization processing environment, the minute quantity pollutant of arbitrary link is (as microparticle, metal ion, organic impurities etc.) existence, all may cause process rate to injure greatly, and the clean degree demand of the processing procedure of this strictness, can't provide via the RCA cleaning procedure of conditional electronic processing procedure, and aforementioned these high water resourcess consume, the processing procedure of high pollution water discharging also will have a strong impact on the development of high-tech electronic industry.Particularly, " friendly produce (the EnvironmentallyBenign Manufacturing) of environment " is the recent tendency of semiconductor and the future development of opto-electronics processing procedure, the research and development actuating force of new-type processing procedure be pursue the same with existing technology good or better carry out processing procedure (Process Performance), cleaner, more friendly to environment simultaneously.
The ozone manufacture comprises photochemical method at present, and this technology is used in the application of making small amount of ozone more.Electric discharge is a kind of similar nature electric shock phenomenon, and is therefore very high for the humidity requirement of air.And so-called electric slurry method, utilize the glass-vacuum tube contain blunt gas, under high-energy, produce electron bombardment and make ozone.The wafer that is used for as for the made ozone of aforementioned manner cleans, be gas phase ozone must be dissolved in the pure water to form clean solution and carry out washing and cleaning operation, and be to be different from the required low concentration ozone of traditional industry (1ppm with interior to several ppm) utilization, semiconductor and photoelectricity manufacturing process for cleaning need the middle and high concentration Ozone Water (tens of ppm scope) of long-time stable supply, therefore, the water solubility of gas phase ozone is the important bottleneck of a ring for making super clean cleaning solution ozoniferous.And the solubility of gas phase ozone is low, and environment is become because of extremely responsive; And specifically influence the principal element of gas phase Ozone Water solubility, comprise concentration, solution temperature and the acid-base value etc. of gas phase ozone.
Existing technology all attempts merely to make convergence thermodynamics saturated concentration to improve the ozone dissolved efficiency with the control physical condition, delivers the result by correlation technique data and patent, as:
Produce system aspects in Ozone Water, US5 is arranged, (Ozone Water produces system design, carries out O with pipeline reactor for 971,368 (Ozone Water produces system design, improves solubility with pressurizedvessel) and DE19752769
3Dissolving).
At wafer purging system design aspect, US5 is arranged, 776,296, US5,464,480 (1～15 ℃ of low temperature) immersion type Ozone Water wafer cleaning cell body), DE19801360 (rotary Ozone Water wafer cleans cell body, 20～70 ℃ of operating temperatures) and JP2000058496 (high temperature formula Ozone Water wafer purging system).
At wafer cleaning formulation design aspect, US6 is arranged, 080,531[is with DI-O
3The organics that (about 36ppm) carries out the containing metal oxide layer removes], US5,964,953[is with DI-O
3(several ppm) cooperates NH4OH (aq), removes Al, organics], US5,759,971 (with O
3Dissolve in 0.03～0.05%HF, as the wafer cleaning fluid), US5,632,847[is with O
3Import (HCl+HF) (aq), with bubble kenel cleaning wafer surface], US5,626,681, EP0708480[is with DI-O
3(several ppm)+HF (aq) cooperates brush-scrubbing, cleans polished wafer, reduces microroughness] and FR2779980[with O
3Mix with HF (aq) again after dissolving in HCl (aq), as the wafer cleaning fluid].
Analyze the patent content of aforementioned these Ozone Water cleaning solution correlative studys,, reach and improve consistency of ozone water and promote the reaction rate purpose how with improvement Ozone Water gas-liquid contact system and the control of purging system temperature and pressure opereating specification; But the efficient in practical application is not desirable to the greatest extent yet, edge is because of single limited to the improvement of promoting consistency of ozone water with the thermodynamic (al) ozone saturated concentration of convergence to change physical condition, and to so far, research and development also focus mostly in the application of low concentration (several ppm) for Ozone Water wafer cleaning formulation, this is the maximum technical bottleneck that present stage Ozone Water technical development meets with, also be cause so far can't popularization and application on processing procedure reason one.
Another important reasons is aforementioned these patent contents, is applied in the wafer cleaning process, can't grasp fully to clean in the cell body ozone concentration distribution situation or can adjust automatically; Press, the ozone program was used in the wafer cleaning of manufacture of semiconductor in the past, mainly by high concentration gas phase ozone, to disperse stirring or aerator that ozone gas is dispersed into tiny bubble, long-pending to increase the gas-liquid contact surface, and then improve matter biography effect, but bubble still is subjected to the restriction of gravity and buoyancy, matter biography effect and pure water phased soln fast can't effectively be provided, form high concentration liquid phase Ozone Water.When wafer immerses rinse bath, can consume the ozone in the cleaning solution fast, and under can't grasping the situation of cleaning ozone concentration distribution situation in the cell body or can adjust automatically, often cause ozone concentration deficiency in the solution of course of reaction middle and later periods, can't be effectively organic substance (as photoresistance) or other oxide layer of crystal column surface be removed, must prolong the scavenging period of wafer, and then cause output to promote.More can't carry out a large amount of manufacturing process for cleaning operations of continous way.Though existing at present part improvement program, by the oxidability of irradiation UV acceleration by light ozone, the degree of its promotion still depends primarily on the ozone concentration in the aqueous solution, not only in the ability of the concrete lifting oxidation of the irradiation institute energy of this UV light; On at present known gas phase ozone and pure water dissolving technology, still can't obtain effective breakthrough.
Summary of the invention
One of main purpose of the present invention is, a kind of method of high efficiency ozone water cleaning semiconductor wafer is provided, mainly contain the liquid phase ozone that height liquid phase dissolved gas phase ozone forms in utilization, reach the method that wafer and glass baseplate surface cleaning clean by ozone oxidation, its can be fast effectively with the photoresistance of crystal column surface or other organic attachment oxidation Decomposition in addition.
The method of a kind of high efficiency ozone water cleaning semiconductor wafer that another main purpose of the present invention provided, can be in response to the variation of ozone concentration in the cleaning solution in the manufacturing process for cleaning, at-once monitor and feedback control running are adjusted, the terms and conditions of stable maintenance manufacturing process for cleaning and application parameter, improve the running speed of manufacture of semiconductor, and reduce the complicated degree of operation and the scavenging period of traditional wafer ablution.
Another main purpose of the present invention is providing a kind of method of high efficiency ozone water cleaning semiconductor wafer, utilization to the detecting of the instant ozone concentration of cleaning solution with present the control reaction, and can be with the cleaning of continous way fast processing considerable wafer, and keep even the oxidative decomposition capacity of control program, phase effectively and is accurately controlled the characteristic of wafer surface oxidation to reach the requirement of different crystal column surface clean-up performances.
A main purpose more of the present invention, provide a kind of method of high efficiency ozone water cleaning semiconductor wafer, utilize the good ozone of oxidability, and with hydrogen peroxide as additive, acquisition is difficult for wafer cleaning solution remaining and that toxicity is lower, compared to the known use concentrated sulfuric acid or other medicament than tool harmfulness, be minimized the chemical agent that makes the apparatus environmental impact in a large number, and the environmental problem that causes chemicals to dispose and handle.
For reaching above-mentioned purpose of the present invention and effect, its concrete technological means of taking comprises:
The system of high efficiency ozone water cleaning semiconductor wafer, this system architecture comprises:
One liquid phase ozone generating machine structure; It has the centrifugal gravitational field environment that produces generation under the high speed rotating, form one and ultra-pure water can be chopped into droplet or vaporific condition, and then with the gas phase ozone of reverse transmission, dissolve completely, mix, and the matter biography mechanism of dissolving gas phase ozone apace, thereby obtain high concentration liquid phase ozone water solution;
One storage tank or rinse bath provide aforementioned in order to the storing of the aqueous solution that cleans, with the working space that provides wafer to clean;
One additive organization of supply is controlled by an automatic feedback control mechanism, carries out additive is dropped into a mechanism of storage tank or rinse bath;
One monitor control mechanism, comprise the monitoring of liquid phase odor concentration, additive concentration, soda acid Quality Control system and water termostat control, at any time in manufacturing process for cleaning, the optimum setting value of various parameters is kept in the monitoring solution, and will detect as a result feed-back type see through tranmission techniques deliver to one automatically the feedback control mechanism analyze and react;
One presents control mechanism automatically, at any time the various concentration and the conditional parameter detecting information that receive aforementioned monitor control mechanism and presented back, and analyze and set point comparison, and then parameters such as reaction density, water temperature and pH-value, and keep parameters that effective cleaning sets and the adjustment of condition is controlled.
The formed gravitational field of this high-speed centrifugal gravitational field device is can obtain to adjust by the change of rotation rotating speed for one, in order to the pressure solubility between control ozone and aqueous solvent, keeps the concentration of aqueous cleaning solution or is suitable for different cleaning subject matters and use.
The concentration of liquid phase ozone of this wafer cleaning solution is the amount of providing that sees through ultra-pure water, gas phase ozone, and the rotating speed of high-speed centrifugal gravitational field device and controlling, and keeps the concentration of aqueous cleaning solution or is suitable for different cleaning subject matters and use.
The present invention is for reaching above-mentioned purpose and effect, and its further concrete technological means of taking comprises a liquid phase ozone generating machine structure, and this liquid phase ozone generating machine structure comprises:
One main body cover, this main body cover comprise the enclosure space and a rotating main body of an inner hollow, and this rotating main body has an axial region and is provided with most filler plate washers;
One drives the dynamic component of this rotating main body;
One ultra-pure water shower nozzle is arranged in this axial region of this rotating main body, and this ultra-pure water shower nozzle is to be connected with a ultra-pure water introducing port;
One ozone gas introducing port, this ozone gas introducing port be located at this main body cover and relatively this rotating main body in order to import ozone gas;
One Ozone Water export mouth, this Ozone Water export mouth are to be located at this main body cover bottom in order to derive high-concentration ozone water.
The present invention is for reaching above-mentioned purpose and effect, and its further concrete technological means of taking comprises:
The system of high efficiency ozone water cleaning semiconductor wafer is partly to lead the systems that wafer carries out a large amount of cleanings of continous way in order to cooperate, and this system architecture comprises:
One liquid phase ozone generating machine structure carries out the high-quality biography contact lysis of the gravitational field environment of ultra-pure water and gas phase ozone, to obtain the wafer cleaning solution of high ozone liquid phase dissolved;
One rinse bath, pipeline link aforementioned liquid phase ozone generating machine structure to be obtained cleaning solution and stores, and provides wafer to immerse the space of cleaning;
One additive organization of supply links aforementioned rinse bath, the controlled interpolation of carrying out additive;
One monitor control mechanism is laid in the aforementioned rinse bath, the various application parameters of instant detecting cleaning solution in cleaning process, and this data of feedback is presented control mechanism automatically in one;
One presents control mechanism automatically, and input is memory solution application parameter set point also; And accept the various parameter data of aforementioned monitor control mechanism detecting feedback, instant collect and analyze, compare the established standards value, simultaneously make reaction mechanism rapidly for comparison result, and then adjust the operations parameter rapidly, has the optimum oxidation capacity of decomposition to keep solution, keep removing of the most effective organic substance (as photoresistance) or other oxide layer to crystal column surface, more can be in order to the cleaning wafer of a large amount of and continous way.
This wafer cleaning solution is that the solution that adopts Ozone Water to mix composition with additive uses.
The concentration of this Ozone Water is to control through the supply that flow, liquid phase ozone are provided of ultra-pure water and the rotating speed of aforementioned liquid phase ozone generating machine structure.
Formed high-speed centrifugal gravitational field in this liquid phase ozone generating machine structure, be to change by the rotating speed adjustment of a dynamic component, in order to the pressure solubility between control ozone and aqueous solvent, keep the concentration of aqueous cleaning solution or be suitable for different cleaning subject matters and use.
This rinse bath is to see through pipeline by a floss hole to link the ultra-pure water introducing port for cleaning used Ozone Water, utilizes with reflux type again.
This rinse bath carries out in the wafer cleaning process, also can cooperate the irradiation of short UV light (UV), further promotes in the manufacturing process for cleaning, for organic oxidation Decomposition speed.
The additive that this additive organization of supply is provided is to adopt hydrogen peroxide (H
2O
2, hydrogen peroxide).
This monitor control mechanism comprises:
One liquid phase and gas phase ozone concentration detecting unit are in order to liquid phase and the gas phase odor concentration of sampling with concentration analysis Ozone Water in rinse bath;
One additive concentration detecting unit is in order to the additive concentration of solution in sampling and the analysis rinse bath;
One pH-value is tracked down the unit, carries out the measurement of pH value of solution and the collection of document signal;
One water temperature is tracked down the unit, measures the temperature of solution at any time and carries out the control of constant temperature.
Should present control mechanism automatically, be that employing tool rapid answer and the mode that reduces control deviation are carried out the adjustment to the operations parameter, and must detect the feedback data that obtains to aforementioned monitor control mechanism, react and export controlling signal, in order to gas phase concentration of ozone, dynamic component rotating speed and gas, liquid charge ratio, and the feedback of parameter conditions such as additives amount, pH value and water temperature control is adjusted, make cleaning solution in the rinse bath, can be maintained stable concentration of liquid phase ozone, additive concentration, pH value and water temperature etc. and be wafer cleaning condition in the best.
The present invention is for reaching above-mentioned purpose and effect, and its further concrete technological means of taking comprises:
The method of high efficiency ozone water cleaning semiconductor wafer, this method comprises:
One high concentration liquid phase ozone clean solution is provided;
Provide an aforementioned liquid phase ozone clean solution to store the storage tank that mixes with additive;
Wafer is immersed aforementioned storage tank;
With aforementioned liquid phase ozone clean solution and additive mixed liquor, oxidation cleaning wafer surface;
In the aforementioned wafer manufacturing process for cleaning, each solvent and the conditional parameter of the aforementioned mixed solution of at-once monitor, and be fed to an automatic feedback control mechanism;
Automatically present control mechanism collection, analyses and comparison aforementioned feed parameter data by this, and immediate acknowledgment carries out reaction mechanism rapidly, and then adjust the operations parameter rapidly, has the optimum oxidation capacity of decomposition to keep solution, keep removing of the most effective organic substance (as photoresistance) or other oxide layer to crystal column surface, more can be in order to the cleaning wafer of a large amount of and continous way.
The parameter of this wafer cleaning process is detectd side, be to be undertaken again detecting information being fed back to automatic feedback control mechanism to comprising concentration of liquid phase ozone detecting, additive concentration detecting, pH value of solution detecting and solution temperature detecting by the mechanism for monitoring that is laid in the aforementioned storage tank.
Automatically the parameter adjustment control of feedback control mechanism, the feedback control that comprises gas phase concentration of ozone, the rotating speed that forms gravitational field and parameter conditions such as gas, liquid charge ratio, additives amount and interpolation speed, pH value and water temperature is adjusted, make cleaning solution, can be maintained stable concentration of liquid phase ozone, additive concentration, pH value and water temperature etc. and be wafer cleaning condition in the best.
The present invention is for reaching above-mentioned purpose and effect, and its further concrete technological means of taking comprises:
The method of high efficiency ozone water cleaning semiconductor wafer is in a rinse bath, and the mixed liquor that utilizes liquid phase ozone solution and hydrogen peroxide is as the wafer cleaning solution, in order to oxidation Decomposition cleaning wafer surface; And the parameter of utilizing each solvent and condition in the aforementioned cleaning solution of the instant detecting of mechanism for monitoring, and be fed to automatic feedback control mechanism and carry out instant parameter adjustment control, has the optimum oxidation capacity of decomposition to keep solution, keep removing of the most effective organic substance (as photoresistance) or other oxide layer to crystal column surface, more can be in order to the cleaning wafer of a large amount of and continous way.
This Ozone Water is carried out the environment of the high-quality biography contact lysis of height gravitational field, provided by a liquid phase ozone generating machine structure, the gravitational field environment that this liquid phase ozone generating machine structure is provided is an adjustable environment, to carry out the Ozone Water of different ozone concentrations, use to be applicable to different cleaning subject matters.
In a preferred embodiment, aforesaid liquid phase ozone generating machine structure is to adopt a kind of high-speed centrifugal gravity RPB, utilize this high efficiency separator, contacted and solute effect with the matter biography of ultra-pure water to strengthen gas phase ozone by the high-gravity technology running, the high-concentration ozone water that forms high liquid phase dissolved is as cleaning solution.And can utilize the gravitational field adjustment of this mechanism, the pressure solubility between control ozone and aqueous solvent is kept the concentration of aqueous cleaning solution or is suitable for different cleaning subject matters and uses.
In another preferred embodiments, the additive that this washing and cleaning operation uses is to adopt hydrogen peroxide (H
2O
2, hydrogen peroxide), this additive can improve the organic oxidative decomposition capacity of crystal column surface.
For remedying the disappearance of conventional clean method, can reach the clean effect that equates at least simultaneously, oneself occurs replacing with ozone the ablution of other chemicals successively over past ten years.Ozone is the gas of characteristics such as strong oxidizing property gas, unstable gas and tool strong corrosion, can add catalyzer contact agent, as manganese oxide (MnO
2), use rapid destruction, therefore not only can reduce the step of cleaning, more can reduce environmentally safe negative effect in the manufacturing process for cleaning.And Ozone Water to be used for that wafer cleans be to possess following technical characteristic:
(1) high-cleanness, high: on-the-spot (on-site) makes, and do not store and carries pollution problem, and can replace the H that manufacturing process for cleaning uses
2O
2, avoid the metallic pollution doubt.
(2) high processing procedure efficient: can making high-purity, ultra-thin (＜20A) gate oxide, its quality is better than the usefulness (thermal oxidation process performance) of existing thermal oxidation program, is that 0.13 μ m processing procedure is necessary to fall.
(3) low pollution emission: (even fully) replacement RCA wafer clean process is employed significantly
H
2SO
4, HCl and H
2O
2Deng medicament, reduce spent acid (bazardous waste) discharging, and can save manufacturing process for cleaning ultra-pure water consumption and reach 20%.
Therefore, utilize the cleaning of Ozone Water, be regarded as the ring in the new generation IC process technique of tool potentiality, can be used in UPW trace TOC reduction, processing procedures such as photoresist removal, post-etch cleaning, post-CMPcleaning, pre-gate cleaning and ultra-thin gate oxide growth.
Description of drawings
Fig. 1 is the flow chart of a preferred embodiment of the present invention system cleaning method;
Fig. 2 is the Organization Chart of a preferred embodiment of the present invention system;
Fig. 3 is the structure chart of liquid phase ozone generating machine structure of the present invention;
Fig. 4 is the structure chart of rotating main body in the liquid phase ozone generating machine structure of the present invention;
Fig. 5 is the end view of rotating main body in the liquid phase ozone generating machine structure of the present invention.
Embodiment
The present invention is relevant a kind of generation processing procedure that utilizes the high concentration ozone water in large flux, form the liquid phase Ozone Water and be provided as cleaning solution, and carry out the washing and cleaning operation of wafer at a storage tank or rinse bath, simultaneously in cleaning process, see through parameter dynamic analysis technologies such as molten concentration of liquid and condition, at any time grasp and clean various parameters such as ozone and additive concentration in the cell body, the monitoring of environmental condition such as pH-value and water temperature, and the parameter generating feed-back type that utilization obtains control, automatically adjust various parameters, make to reach and keep rinse bath optium concentration distribution effect, and keeping under effective crystal column surface cleansing power, carry out continous way considerable wafer cleaning fast.
Preferred embodiment of the present invention suitably is disclosed in the major technique content of the method for aforesaid high efficiency ozone water cleaning semiconductor wafer in the following cited preferred embodiment, and utilizes this preferred embodiment system that major technique content of the present invention is suitably implemented.
Fig. 1,2 discloses the operation workflow figure and the Organization Chart of a preferred embodiment of the present invention high efficiency ozone water cleaning semiconductor wafer system.The high efficiency ozone water cleaning semiconductor wafer system of this case preferred embodiment, this system architecture mainly are by a liquid phase ozone generating machine structure 1, provide the dissolving of gas phase ozone and ultra-pure water to produce ozone water solution; One rinse bath 2 is in order to store Ozone Water and to carry out the immersion washing and cleaning operation of wafer; One additive organization of supply 3 provides the supply and the supply rate control of additive in the cleaning process; One monitor control mechanism 4 is in order to monitor the application parameter of each concentration and environmental condition at any time in cleaning process; Reach one and present control mechanism 5 automatically, collect the detecting value of 4 feedbacks of aforementioned monitor control mechanism and analyse and compare, and immediate acknowledgment controlled concentration adjustment running is formed.Wherein,
This liquid phase ozone generating machine structure 1, the main generation mechanism that forms high-concentration ozone water in the dissolving that gas phase ozone and ultra-pure water are provided; In the specific embodiment that Fig. 2 and Fig. 3 disclosed, this liquid phase ozone generating machine structure 1 is to be a high-speed centrifugal gravitational field device, have and in main body cover 11, produce the centrifugal gravitational field environment that produces under the high speed rotating, form one and ultra-pure water can be chopped into droplet or vaporific condition, and then with the gas phase ozone of reverse transmission, dissolve completely, mix, and dissolve the matter biography mechanism of gas phase ozone apace, obtain high concentration liquid phase ozone water solution.
In other specific embodiment structure, this liquid phase ozone generating machine structure 1 is to adopt a high gravity RPB configuration to use, with in the high gravity rotating environment that packed bed was provided, promote the high dissolution of liquid phase ultra-pure water and gas phase ozone to be mixed into Ozone Water, as wafer cleaning solution of the present invention.
Aforementioned liquid phase ozone generating machine structure 1 as shown in Figure 3, in the specific embodiment structure, includes a main body cover 11, and gas, the liquid dissolving running of enclosure space to carry out the gravitational field environment of a hollow is provided; One cooperates hermetic seal axle 12 and the rotating main body 13 of axle group aforementioned body shell 11 in disposes most individual filler plate washers 131 on the rotating main body 13; One drives the dynamic component 14 of aforementioned rotating main body 13 rotation runnings, adopts as motor configurations; One ultra-pure water shower nozzle 15 is placed on the axial region central authorities of aforementioned rotating main body 13, and is connected with ultra-pure water introducing port 16, sprays running as forming in the importing of ultra-pure water and the rotating main body 13; One ozone gas introducing port 17 is in order to link ozone generation device 62 to obtain the importing of gas phase ozone gas; One Ozone Water export mouth 18 provides high-concentration ozone water in order to link rinse bath 2; One gas pressure bypass 19 sees through pipeline and links a gas phase foul smell analytic unit 10, and the ozone gas concentration parameter that is imported is analyzed in detecting at any time in 1 running of liquid phase ozone generating machine structure.In addition, each water inlet, delivery port, air inlet, the exhaust outlet of this liquid phase ozone generating machine structure 1 need intercept water, the pipeline of gas turnover or relevant thin portion air-tightness structure etc. with other, because of all directly adopting airtight member configuration commonly used, so all give omission not.
Again, the rotating main body 11 of aforementioned this liquid phase ozone generating machine structure 1, in a specific embodiment framework, it is the structure that is a storehouse dish type attitude, as Fig. 4 and shown in Figure 5, comprise that one intercepts net by filler and forms the rotary body outer wall 111 that is defined, form a rotary body inwall 112 that is defined with intercepting to net by filler equally.Therebetween can fill the packing material of inertia material, but as the material structure of baton round, stainless steel wire mesh, glass marble, ceramic filler, metal oxide ingot or other aqueous dispersion and gas.And be the intensity of packed bed main body when keeping high speed rotating, must carry out fixing with rotary body support fixation member 113 as screw to rotary body outer wall 111 and rotary body inwall 112.
1 material source in order to mixed dissolution generation Ozone Water of aforementioned liquid phase ozone generating machine structure comprises the pure water supply 61 that pipeline links, and the importing of ultra-pure water is provided; One ozone generation device 62, in order to generate and to provide ozone to be input in the liquid phase ozone generating machine structure 1, and in this liquid phase ozone generating machine structure 1, cooperate the rotation of high-speed centrifugal gravity to operate, can increase gas, the time of staying of liquid contact, and change gas, the microcosmic gravity environment at liquid interface, see through liquid phase ozone generating machine structure 1 simultaneously and roll up gas, the matter of liquid contact passes area, can effectively promote the solubility of ozone in the aqueous solution, and reduce matter biography ozone to the required time of balance concentration of liquid phase ozone, more can be by the adjustment of dynamic component 14 rotating speeds, and change gravitational field in the liquid phase ozone generating machine structure 1; The aforementioned high-concentrated ozone aqueous solution that is produced through liquid phase ozone generating machine structure 1 will be transported to rinse bath 2 through linking pipeline.
One rinse bath 2 mainly stores in the Ozone Water that aforementioned liquid phase ozone generating machine structure 1 cleaning solution that produces is provided, and immerses the space of carrying out washing and cleaning operation with wafer is provided; This rinse bath 2 is to adopt a drum ladle in the specific embodiment structure, and the Ozone Water export mouth 18 that sees through pipeline and aforementioned liquid phase ozone generating machine structure 1 links, to obtain the Ozone Water as cleaning solution.And through the Ozone Water after using, then can discharge by a floss hole 20, or it is drawn back in the system, cooperate ultra-pure water introducing port 16, utilize again with reflux type.
One additive organization of supply 3 is to see through pipeline directly to link with aforementioned rinse bath 2, in order to the in check interpolation of carrying out additive in cleaning process.The additive that is adopted in the specific embodiment of the invention is with hydrogen peroxide (H
2O
2) being added to the best, can improve the organic oxidative decomposition capacity of crystal column surface.
One monitor control mechanism 4 mainly is that wafer carries out in the cleaning process at rinse bath 2, in order to the parameter of various concentration in the monitoring cleaning solution at any time; This mechanism 4 comprises: a concentration of liquid phase ozone detecting unit 41, additive concentration detecting unit 42, pH-value track down unit 43 and water temperature is tracked down unit 44.This concentration of liquid phase ozone detecting unit 41 is laid in the rinse bath 2, it is the liquid phase odor concentration of Ozone Water in detecting rinse bath 2, and in the specific embodiment configuration, can adopt a liquid phase foul smell analyzer to use, carried out the sampling and the concentration analysis of liquid phase ozone; One additive concentration detecting unit 42, be equally in rinse bath 2 sampling and the concentration of analyzing this additive whether in range of set value; One pH-value is tracked down unit 43, utilizes this pH value detector 431 to carry out the measurement of pH-value in rinse bath 2, and carries out the collection of document signal by pH value controller 432; And one water temperature track down unit 44, measure the temperature of solution at any time, and carry out the control of constant temperature.The various detectings of aforementioned monitor control mechanism 4 or measurement document signal will be fed to one automatically and present control mechanism 5 automatically, analyze and compare and react control to operate.
One presents control mechanism 5 automatically, the design feedback data that 4 detectings obtain to aforementioned monitor control mechanism that must cooperate software program, cooperate the setting and the memory of various concentration or standard temperature, automatically present the collection that control mechanism 5 is detected the feedback data by this, and with the comparison of aforementioned set point, simultaneously below standard accurate person is arranged, promptly react and export the control that controlling signal is carried out mechanism's running for comparison result.
The aforementioned control mechanism 5 of feedback automatically, in a preferable specific embodiment configuration frame, can use the general pid parameter control or the learning-oriented control mode of hardening parameter control or neural network, main mode with energy rapid answer and reduction control deviation is carried out the adjustment to the operations parameter.
The aforementioned control mechanism 5 of feedback automatically is through obtaining the concentration of liquid phase ozone detecting unit 41 of aforementioned monitor control mechanism 4, detecting result to the concentration of liquid phase ozone of Ozone Water cleaning solution in the rinse bath 2, behind compare of analysis and according to the standard value of wafer manufacturing process for cleaning condition as setting, and then dynamic component 14 rotating speeds of adjustment liquid phase ozone generating machine structure 1, and the water flow of the magnitude of voltage of ozone generation device 62 or pure water supply 61, make to produce to set in the concentration of ozone water importing rinse bath 2 and use.Or according to the additive concentration data of detecting feedback, the addition and the speed of reaction and control additive organization of supply 3.
The system of the high efficiency ozone water cleaning semiconductor wafer of an aforementioned preferred embodiment according to the present invention, utilize this system in order to the method that wafer cleans, seeing also the operation workflow figure and the framework flow chart of method of the high efficiency ozone water cleaning semiconductor wafer of the preferred embodiment of the present invention that Fig. 1,2 illustrated.
At first, produce liquid phase Ozone Water cleaning solution by 1 running of liquid phase ozone generating machine structure, promptly utilize this high gravity RPB, provide to have that to improve gas phase ozone long-pending with the contact surface of liquid phase ultra-pure water and change environmental condition when contact the matter biography, to carry out gas, liquid high dissolution in conjunction with formation ozone with high concentration water.
Comprise in concrete operation: activate the pure water supply 61 that liquid phase ozone generating machine structure 1 pipeline links, ultra-pure water is imported through ultra-pure water introducing port 16 be positioned at liquid phase ozone generating machine structure 1, spray to rotating main body 13 by ultra-pure water shower nozzle 15, see through rotating main body 13 and drive, utilize centrifugal force outwards to throw away from filler plate washer 131 in the rotation of dynamic component 14.Then coat at rotating main body 131 and 16 of ultra-pure water charging apertures with the gas pressure bypass, and isolated by airtight shaft seal 12, to keep in order to the airtight and pressure of RPB, pressure changes also can carry out Direct observation from Pressure gauge or by the pressure reduction display.Ozone gas is then produced by ozone generation device 62, and link the high gravity RPB of ozone gas introducing port 17 inputs of liquid phase ozone generating machine structure 1 via pipeline, can learn from the gas-liquid feedstock direction of liquid phase ozone generating machine structure 1 design, ozone gas and ultra-pure water charging, be to take the matter of reverse flow to pass contact, ultra-pure water is imported by the ultra-pure water charging aperture 16 at liquid phase ozone generating machine structure 1 top, is flowed out by bottom ozone water solution outlet 18, in order to use.Then from side ozone gas inlet 17 importings of liquid phase ozone generating machine structure 1, the pressure gas-liquid matter that sees through in packed bed rotating main body 11 passes ozone gas, and remaining ozone gas is known from experience gas pressure bypass 19 releases from liquid phase ozone generating machine structure 1 top.
So, can be by the high speed rotating of liquid phase ozone generating machine structure 1, the surperficial touch opportunity that the high gravity environment that produces and forcing improves, what effectively promote gas phase ozone and ultra-pure water solvent contacts the matter biography, and respectively filling between material at the rotating main body 13 of high speed rotating, the ultra-pure water solvent can be chopped into droplet by shearing, even vaporific condition, and then with the gas phase ozone of reverse transmission, dissolve mixing completely, can effectively produce the effect of mixing, and dissolve gas phase ozone apace.See through this matter and pass mechanism, can effectively and fast ozone be dissolved in the aqueous solvent, form the present invention and be applicable to that wafer cleans the main constituent of cleaning solution that uses, flow out via the bottom ozone water solution outlet 18 of liquid phase ozone generating machine structure 1 simultaneously and be transported to aforementioned rinse bath 2 and store.
Also activate simultaneously additive feeding mechanism 3, according to the additive such as the hydrogen peroxide (H of the optium concentration ratio of setting
2O
2), add in the aforesaid rinse bath 2, mix with Ozone Water and form cleaning solution, and wafer to be cleaned is immersed in the rinse bath 2, the mixed solution that utilizes Ozone Water and additive to form carries out the oxidation Decomposition of crystal column surface and cleans.
In the process that aforementioned wafer cleans in immersing rinse bath 2, each detecting unit 41,42,43,44 of mechanism for monitoring 4 in the system of the present invention also begins various application parameter detectings at any time simultaneously; See through the detecting of ozone concentration sampling and analysis in the solution in 41 pairs of rinse baths of concentration of liquid phase ozone detecting unit 2; Additive concentration detecting unit 42 is sampling and analyze the concentration of this additive in rinse bath 2 equally; PH-value is tracked down unit 43 carries out pH-value in rinse bath 2 measurement; And water temperature tracks down the temperature etc. that unit 44 measures solution at any time, and instant detecting obtains various parameters in solution and the rinse bath 2, and the data that institute's detecting is obtained, and the automatic feedback control mechanism 5 of system of the present invention is delivered in feedback, with analysis, the comparison of carrying out parameter.
Automatic feedback control mechanism 5 in the system of the present invention is for the parameters that obtains via 4 detectings of aforementioned mechanism for monitoring, also with instant collecting and analyzing, comparison established standards value, and make reaction mechanism rapidly for comparison result, and then adjust the operations parameter rapidly, gas phase concentration of ozone as 1 generation of liquid phase ozone generating machine structure, and rotating speed and gas-liquid charge ratio, the hydrogen peroxide additive capacity, conditions such as pH value and water temperature, make cleaning solution in the rinse bath 2, can be maintained stable concentration of liquid phase ozone, additive concentration, pH value and water temperature etc. are the wafer cleaning conditions in the best, more can bear a large amount of wafer cleaning load of moment, and reply fast, and the concentration of liquid phase ozone in the stable maintenance rinse bath, promote the wafer cleaning efficiency and reduce electric power energy consumption, reduce the use amount of chemical cleaning medicine simultaneously, when also can reducing the semiconductor factory running, this, reduces water consumption to the impact of environment.
The method of aforementioned enforcement high efficiency ozone water cleaning semiconductor wafer according to the present invention.Can obtain gas, the liquid dissolved ozone aqueous solution of high concentration and high-dissolvability, be applied to the cleaning of wafer, and can obtain splendid fast effectively with the photoresistance of crystal column surface or other organic attachment oxidation Decomposition in addition; The monitoring of solution concentration and feedback control in more can cleaning at any time, compared to known Ozone Water cleaning method, can not exist wafer to immerse and consume ozone in the cleaning solution fast, cause ozone concentration deficiency in the solution of course of reaction middle and later periods, the problem that can't be effectively organic substance (as photoresistance) or other oxide layer of crystal column surface be removed, the present invention then can see through in the cleaning process, at any time the various application parameters of solution in the rinse bath 2 and the detecting and the feedback of content concn are carried out replenishment control, the best wafer that maintains that ozone concentration can be continued cleans oxidative decomposition capacity, keep removing of the most effective organic substance (as photoresistance) or other oxide layer to crystal column surface, more can be in order to the cleaning wafer of a large amount of and continous way.
In another preferable specific embodiment, produce the liquid phase Ozone Water in the liquid phase ozone generating machine structure 1 of the present invention, and wafer carries out in the cleaning process at rinse bath 2, can also cooperate the irradiation of short UV light (UV), further promote in the manufacturing process for cleaning,, and can make full use of ozone and the hydrogen peroxide that dissolves in the ultra-pure water for organic oxidation Decomposition speed, effectively carry out the non-circulating type cleaning process, and reduce to minimum to the impact of environment residual ozone and hydrogen peroxide.
The system of high efficiency ozone water cleaning semiconductor wafer provided by the present invention and method thereof, must understand the embodiment that announce in this place really, be to be used for explaining but not to be used for excessively limiting claim of the present invention, not described herein other embodiment and application all are considered as within the scope of the invention.Also must understand really at this; though the system of this case high efficiency ozone water cleaning semiconductor wafer and the specific implementations of method thereof have been discussed; but carrying out these enforcement structures of most similar functions, still is in the claimed category of claim of the present invention.
Claims (17)
1. the system of a high efficiency ozone water cleaning semiconductor wafer is partly to lead the systems that wafer carries out a large amount of cleanings of continous way in order to cooperate, and this system architecture comprises:
One liquid phase ozone generating machine structure, this liquid phase ozone generating machine structure has the centrifugal gravitational field environment that produces generation under the high speed rotating, form one and ultra-pure water can be chopped into droplet or vaporific condition, and then with the gas phase ozone of reverse transmission, dissolve completely, mix, and the matter biography mechanism of dissolving gas phase ozone apace, thereby obtain high concentration liquid phase ozone water solution;
One rinse bath, pipeline link aforementioned liquid phase ozone generating machine structure to be obtained cleaning solution and stores, and provides wafer to immerse the space of cleaning;
One additive organization of supply links aforementioned rinse bath, the controlled interpolation of carrying out additive;
One monitor control mechanism is laid in the aforementioned rinse bath, the various application parameters of instant detecting cleaning solution in cleaning process, and this data of feedback is presented control mechanism automatically in one;
One presents control mechanism automatically, and input is memory solution application parameter set point also; And accept the various parameter data of aforementioned monitor control mechanism detecting feedback, instant collect and analyze, compare the established standards value, simultaneously make reaction mechanism rapidly for comparison result, and then adjust the operations parameter rapidly, has the optimum oxidation capacity of decomposition to keep solution, keep removing of the most effective organic substance (as photoresistance) or other oxide layer to crystal column surface, more can be in order to the cleaning wafer of a large amount of and continous way.
2. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 1 is characterized in that, this wafer cleaning solution is that the solution that adopts Ozone Water to mix composition with additive uses.
3. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 2 is characterized in that, the concentration of this Ozone Water is to control through the supply that flow, liquid phase ozone are provided of ultra-pure water and the rotating speed of aforementioned liquid phase ozone generating machine structure.
4. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 1, it is characterized in that, formed high-speed centrifugal gravitational field in this liquid phase ozone generating machine structure, be to change by the rotating speed adjustment of a dynamic component, in order to the pressure solubility between control ozone and aqueous solvent, keep the concentration of aqueous cleaning solution or be suitable for different cleaning subject matters and use.
5. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 1 is characterized in that, this rinse bath is to see through pipeline by a floss hole to link the ultra-pure water introducing port for cleaning used Ozone Water, utilizes with reflux type again.
6. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 1, it is characterized in that this rinse bath carries out in the wafer cleaning process, also can cooperate the irradiation of short UV light (UV), further promote in the manufacturing process for cleaning, for organic oxidation Decomposition speed.
7. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 1 is characterized in that, the additive that this additive organization of supply is provided is to adopt hydrogen peroxide (H
2O
2, hydrogen peroxide).
8. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 1 is characterized in that, this monitor control mechanism comprises:
One liquid phase and gas phase ozone concentration detecting unit are in order to liquid phase and the gas phase odor concentration of sampling with concentration analysis Ozone Water in rinse bath;
One additive concentration detecting unit is in order to the additive concentration of solution in sampling and the analysis rinse bath;
One pH-value is tracked down the unit, carries out the measurement of pH value of solution and the collection of document signal;
One water temperature is tracked down the unit, measures the temperature of solution at any time and carries out the control of constant temperature.
9. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 1, it is characterized in that, should present control mechanism automatically, be that employing tool rapid answer and the mode that reduces control deviation are carried out the adjustment to the operations parameter, and must detect the feedback data that obtains to aforementioned monitor control mechanism, react and export controlling signal, in order to the gas phase concentration of ozone, dynamic component rotating speed and gas, the liquid charge ratio, and additives amount, the feedback control of parameter conditions such as pH value and water temperature is adjusted, make and cleaning solution in the rinse bath can be maintained stable concentration of liquid phase ozone, additive concentration, pH value and water temperature etc. are the wafer cleaning conditions in the best.
10. the system of a high efficiency ozone water cleaning semiconductor wafer is partly to lead the systems that wafer carries out a large amount of cleanings of continous way in order to cooperate, and it is characterized in that this system includes a liquid phase ozone generating machine structure, and this liquid phase ozone generating machine structure comprises:
One main body cover, this main body cover comprise the enclosure space and a rotating main body of an inner hollow, and this rotating main body has an axial region and is provided with most filler plate washers;
One drives the dynamic component of this rotating main body;
One ultra-pure water shower nozzle is arranged in this axial region of this rotating main body, and this ultra-pure water shower nozzle is to be connected with a ultra-pure water introducing port;
One ozone gas introducing port, this ozone gas introducing port be located at this main body cover and relatively this rotating main body in order to import ozone gas;
One Ozone Water export mouth, this Ozone Water export mouth are to be located at this main body cover bottom in order to derive high-concentration ozone water.
11. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 10 is characterized in that, this rotating main body is provided with a hermetic seal axle, and then coats with a gas pressure bypass between this rotating main body and this ultra-pure water introducing port.
12. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 10, it is characterized in that, this filler plate washer be comprise one by filler intercept net form rotary body outer wall and the rotary body inwall that defines, be filled with the packing material of inertia material between this rotary body outer wall and rotary body inwall.
13. the method for a high efficiency ozone water cleaning semiconductor wafer, this method comprises:
One high concentration liquid phase ozone clean solution is provided, this high concentration liquid phase ozone clean solution is the centrifugal gravitational field environment that produces under a high speed rotating, form one and ultra-pure water can be chopped into droplet or vaporific condition, and then with the gas phase ozone of reverse transmission, dissolve completely, mix, and dissolve machine-processed acquisition of matter biography of gas phase ozone apace;
Provide an aforementioned liquid phase ozone clean solution to store the storage tank that mixes with additive;
Wafer is immersed aforementioned storage tank;
With aforementioned liquid phase ozone clean solution and additive mixed liquor, oxidation cleaning wafer surface;
In the aforementioned wafer manufacturing process for cleaning, each solvent and the conditional parameter of the aforementioned mixed solution of at-once monitor, and be fed to an automatic feedback control mechanism;
Automatically present control mechanism collection, analyses and comparison aforementioned feed parameter data by this, and immediate acknowledgment carries out reaction mechanism rapidly, and then adjust the operations parameter rapidly, has the optimum oxidation capacity of decomposition to keep solution, keep removing of the most effective organic substance (as photoresistance) or other oxide layer to crystal column surface, more can be in order to the cleaning wafer of a large amount of and continous way.
14. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 13, it is characterized in that, the parameter of this wafer cleaning process is detectd side, be to be undertaken again detecting information being fed back to automatic feedback control mechanism to comprising concentration of liquid phase ozone detecting, additive concentration detecting, pH value of solution detecting and solution temperature detecting by the mechanism for monitoring that is laid in the aforementioned storage tank.
15. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 13, it is characterized in that, automatically the parameter adjustment control of feedback control mechanism, the feedback control that comprises gas phase concentration of ozone, the rotating speed that forms gravitational field and parameter conditions such as gas, liquid charge ratio, additives amount and interpolation speed, pH value and water temperature is adjusted, make cleaning solution, can be maintained stable concentration of liquid phase ozone, additive concentration, pH value and water temperature etc. and be wafer cleaning condition in the best.
16. the method for a high efficiency ozone water cleaning semiconductor wafer, be to utilize a liquid phase ozone generating machine structure to produce the centrifugal gravitational field environment that produces under the high speed rotating, form one and ultra-pure water can be chopped into droplet or vaporific condition, and then with the gas phase ozone of reverse transmission, dissolve completely, mix, and a matter of dissolving gas phase ozone apace passes mechanism, thereby obtain the liquid phase ozone water solution of high concentration, and in a rinse bath, the mixed liquor that utilizes this liquid phase ozone water solution and hydrogen peroxide is as the wafer cleaning solution, in order to oxidation Decomposition cleaning wafer surface; And the parameter of utilizing each solvent and condition in the aforementioned cleaning solution of the instant detecting of mechanism for monitoring, and be fed to automatic feedback control mechanism and carry out instant parameter adjustment control, has the optimum oxidation capacity of decomposition to keep solution, keep removing of the most effective organic substance (as photoresistance) or other oxide layer to crystal column surface, more can be in order to the cleaning product circle of a large amount of and continous way.
17. the system of high efficiency ozone water cleaning semiconductor wafer according to claim 16, it is characterized in that, the gravitational field environment that this liquid phase ozone generating machine structure is provided is an adjustable environment, to carry out the Ozone Water of different ozone concentrations, uses to be applicable to different cleaning subject matters.
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| CN102184841A (en) * | 2010-12-17 | 2011-09-14 | 无锡华润上华半导体有限公司 | Method and system for recycling ultrapure water of wafer foundry machine platform |
| CN102208327B (en) * | 2011-01-30 | 2012-11-14 | 北京七星华创电子股份有限公司 | Device and method for managing semiconductor cleaning solution |
| JP5775383B2 (en) * | 2011-06-30 | 2015-09-09 | 株式会社荏原製作所 | Substrate cleaning method |
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| CN109300773B (en) * | 2018-08-15 | 2021-06-15 | 上海华力集成电路制造有限公司 | Surface treatment method of wafer |
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