CN100348772C - 物理气相沉积系统中的准直管的温度控制装置 - Google Patents
物理气相沉积系统中的准直管的温度控制装置 Download PDFInfo
- Publication number
- CN100348772C CN100348772C CNB2003101228905A CN200310122890A CN100348772C CN 100348772 C CN100348772 C CN 100348772C CN B2003101228905 A CNB2003101228905 A CN B2003101228905A CN 200310122890 A CN200310122890 A CN 200310122890A CN 100348772 C CN100348772 C CN 100348772C
- Authority
- CN
- China
- Prior art keywords
- collimator tube
- reaction chamber
- temperature
- control device
- collimator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101228905A CN100348772C (zh) | 2003-12-25 | 2003-12-25 | 物理气相沉积系统中的准直管的温度控制装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101228905A CN100348772C (zh) | 2003-12-25 | 2003-12-25 | 物理气相沉积系统中的准直管的温度控制装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1632161A CN1632161A (zh) | 2005-06-29 |
CN100348772C true CN100348772C (zh) | 2007-11-14 |
Family
ID=34844664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2003101228905A Expired - Fee Related CN100348772C (zh) | 2003-12-25 | 2003-12-25 | 物理气相沉积系统中的准直管的温度控制装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100348772C (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5762704B2 (ja) * | 2010-08-20 | 2015-08-12 | 東京エレクトロン株式会社 | 基板処理装置及び温度調節方法 |
WO2018094022A1 (en) * | 2016-11-18 | 2018-05-24 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition chamber |
CN108385057B (zh) * | 2018-01-26 | 2020-07-31 | 清华大学 | 一种用于直写式真空蒸发系统的阶梯式准直管结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1210900A (zh) * | 1998-06-19 | 1999-03-17 | 吉林大学 | 低应力立方氮化硼薄膜及其制备装置和制备方法 |
US6051121A (en) * | 1996-01-22 | 2000-04-18 | Micron Technology Inc | Deposition chamber with a biased substrate configuration |
US6287436B1 (en) * | 1998-02-27 | 2001-09-11 | Innovent, Inc. | Brazed honeycomb collimator |
JP2002069611A (ja) * | 2000-06-29 | 2002-03-08 | Applied Materials Inc | 処理キットの再使用寿命を伸ばす方法 |
CN1412350A (zh) * | 2001-10-11 | 2003-04-23 | 矽统科技股份有限公司 | 沉积制程的工作平台 |
-
2003
- 2003-12-25 CN CNB2003101228905A patent/CN100348772C/zh not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6051121A (en) * | 1996-01-22 | 2000-04-18 | Micron Technology Inc | Deposition chamber with a biased substrate configuration |
US6267852B1 (en) * | 1996-01-22 | 2001-07-31 | Micron Technology, Inc. | Method of forming a sputtering apparatus |
US6287436B1 (en) * | 1998-02-27 | 2001-09-11 | Innovent, Inc. | Brazed honeycomb collimator |
CN1210900A (zh) * | 1998-06-19 | 1999-03-17 | 吉林大学 | 低应力立方氮化硼薄膜及其制备装置和制备方法 |
JP2002069611A (ja) * | 2000-06-29 | 2002-03-08 | Applied Materials Inc | 処理キットの再使用寿命を伸ばす方法 |
CN1412350A (zh) * | 2001-10-11 | 2003-04-23 | 矽统科技股份有限公司 | 沉积制程的工作平台 |
Non-Patent Citations (3)
Title |
---|
物理气相沉积技术的新进展 李健等.材料保护,第33卷第1期 2000 * |
物理气相沉积的原理和应用 阎洪.材料导报,第3期 1996 * |
真空等离子装置的改进设计 袁安富等.南京航空航天大学学报,第31卷第5期 1999 * |
Also Published As
Publication number | Publication date |
---|---|
CN1632161A (zh) | 2005-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5171412A (en) | Material deposition method for integrated circuit manufacturing | |
US5358615A (en) | Process for forming a sputter deposited metal film | |
KR950009909A (ko) | 조정된 스퍼터링 소스 제어 방법 | |
TW201122151A (en) | Hot wire chemical vapor deposition (CVD) inline coating tool | |
CN105448768B (zh) | 半导体加工设备 | |
CN105514028A (zh) | 扩大Ti/TiN应力窗口的工艺方法 | |
EP0686708A1 (en) | Film forming method and film forming apparatus | |
CN100348772C (zh) | 物理气相沉积系统中的准直管的温度控制装置 | |
CN100463107C (zh) | 可挠性阵列基板的制造方法 | |
TWI682481B (zh) | 減壓乾燥裝置、基板處理裝置及減壓乾燥方法 | |
Kadlec et al. | Growth and properties of hard coatings prepared by physical vapor deposition methods | |
US6254739B1 (en) | Pre-treatment for salicide process | |
WO2022232224A1 (en) | Stress and overlay management for semiconductor processing | |
EP0848421A2 (en) | Selective physical vapor deposition conductor fill in IC structures | |
CN102051497B (zh) | 金银镶嵌靶材及其薄膜的制备方法 | |
JP5150312B2 (ja) | 微細凹凸構造の形成方法、及び微細凹凸構造を有する基板 | |
WO2020033836A1 (en) | Multicathode deposition system | |
Abe et al. | Effects of amplitude modulated capacitively coupled discharge Ar plasma on kinetic energy and angular distribution function of ions impinging on electrodes: particle-in-cell/Monte Carlo collision model simulation | |
US6000415A (en) | Method and apparatus for positioning a restrictor shield of a pump in response to an electric signal | |
WO2002089186A2 (en) | Deposition and skipe annealing of tungsten silicide films | |
US20140174914A1 (en) | Methods and Systems for Reducing Particles During Physical Vapor Deposition | |
Cale et al. | Model for surface diffusion of aluminum–(1.5%) copper during sputter deposition | |
US20060292896A1 (en) | Heater for heating a wafer and method for preventing contamination of the heater | |
KR200198444Y1 (ko) | 반도체의물리기상증착장치 | |
US20040222083A1 (en) | Pre-treatment for salicide process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111123 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071114 Termination date: 20181225 |