CN100345999C - Process for chemical vapor phase depositing titaniam nitride containing silicon using titanium containing organic metal material - Google Patents
Process for chemical vapor phase depositing titaniam nitride containing silicon using titanium containing organic metal material Download PDFInfo
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- CN100345999C CN100345999C CNB031147070A CN03114707A CN100345999C CN 100345999 C CN100345999 C CN 100345999C CN B031147070 A CNB031147070 A CN B031147070A CN 03114707 A CN03114707 A CN 03114707A CN 100345999 C CN100345999 C CN 100345999C
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CNB031147070A CN100345999C (en) | 2003-01-02 | 2003-01-02 | Process for chemical vapor phase depositing titaniam nitride containing silicon using titanium containing organic metal material |
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CNB031147070A CN100345999C (en) | 2003-01-02 | 2003-01-02 | Process for chemical vapor phase depositing titaniam nitride containing silicon using titanium containing organic metal material |
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CN1425797A CN1425797A (en) | 2003-06-25 |
CN100345999C true CN100345999C (en) | 2007-10-31 |
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CNB031147070A Expired - Fee Related CN100345999C (en) | 2003-01-02 | 2003-01-02 | Process for chemical vapor phase depositing titaniam nitride containing silicon using titanium containing organic metal material |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8043976B2 (en) * | 2008-03-24 | 2011-10-25 | Air Products And Chemicals, Inc. | Adhesion to copper and copper electromigration resistance |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09312297A (en) * | 1995-12-05 | 1997-12-02 | Applied Materials Inc | Plasma annealing of thin film |
JPH10209081A (en) * | 1996-12-05 | 1998-08-07 | Lsi Logic Corp | Improved barrier layer for via or contact aperture of integrated circuit structure and manufacture thereof |
WO2001042529A1 (en) * | 1999-12-09 | 2001-06-14 | Tokyo Electron Limited | METHOD FOR FORMING TiSiN FILM, DIFFUSION PREVENTIVE FILM COMPRISING TiSiN FILM, SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND APPARATUS FOR FORMING TiSiN FILM |
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2003
- 2003-01-02 CN CNB031147070A patent/CN100345999C/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09312297A (en) * | 1995-12-05 | 1997-12-02 | Applied Materials Inc | Plasma annealing of thin film |
JPH10209081A (en) * | 1996-12-05 | 1998-08-07 | Lsi Logic Corp | Improved barrier layer for via or contact aperture of integrated circuit structure and manufacture thereof |
WO2001042529A1 (en) * | 1999-12-09 | 2001-06-14 | Tokyo Electron Limited | METHOD FOR FORMING TiSiN FILM, DIFFUSION PREVENTIVE FILM COMPRISING TiSiN FILM, SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND APPARATUS FOR FORMING TiSiN FILM |
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CN1425797A (en) | 2003-06-25 |
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Owner name: SHANGHAI HUAHONG (GROUP) CO., LTD.; APPLICANT Free format text: FORMER OWNER: SHANGHAI HUAHONG (GROUP) CO., LTD. Effective date: 20060901 |
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Effective date of registration: 20060901 Address after: 201203 No. 177 blue wave road, Zhangjiang hi tech park, Shanghai, Pudong New Area Applicant after: Shanghai Huahong (Group) Co., Ltd. Co-applicant after: Shanghai integrated circuit research and Development Center Co., Ltd. Address before: 18, Huaihai Road, Shanghai, No. 200020, building 918 Applicant before: Shanghai Huahong (Group) Co., Ltd. |
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C14 | Grant of patent or utility model | ||
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071031 Termination date: 20120102 |