CN100342492C - Preparation for silicon material on thick film insulative layers - Google Patents
Preparation for silicon material on thick film insulative layers Download PDFInfo
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- CN100342492C CN100342492C CNB031158277A CN03115827A CN100342492C CN 100342492 C CN100342492 C CN 100342492C CN B031158277 A CNB031158277 A CN B031158277A CN 03115827 A CN03115827 A CN 03115827A CN 100342492 C CN100342492 C CN 100342492C
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- epitaxial
- soi
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Abstract
The present invention relates to a method for preparing a thick film SOI (Silicon on insulator) material, which is characterized in that a thin SOI material which is prepared by using an SIMOX technology is used as a substrate; then, a vapor phase epitaxy technology is used for the epitaxial growth of a monocrystal silicon layer. The SOI material which is prepared by the method for preparing a thick film SOI (Silicon on insulator) material can be used as an optical waveguide material, and the thickness of an epitaxial layer can be controlled according to needs. The surface smoothness of the epitaxial layer is superior to an SOI material which is prepared by a bonding thinning method. SiCl4, SiHCl3, SiH2Cl2 or SiH4 can be used as a silica resource for the epitaxial growth, and epitaxial doping types can be selected according to needs. Before the epitaxial growth, the substrate is roasted at high temperature by H2 to improve surface conditions. The thickness of a silicon layer of the epitaxial layer is 5 to 10 mu, and a deposition rate is 0.3 to 0.8 mu /min.
Description
Technical field
The present invention relates to a kind of silicon SOI (Siliconon insulator) material on the insulating thick film layer of optical communication waveguide material that is used as, provided this preparation methods, and narrated key technology wherein, belong to new material technology field.
Background technology
The used optical wavelength of current optical communication is 1.30 μ and 1.55 μ, and these two wavelength almost are transparent concerning Si; The characteristics of SOI material are top layer silicon and buried regions silica (SiO
2) refractive index differs greatly, top layer silicon can be used as the conducting shell of optical communication with light wave, the buried regions silica is as covering, thereby the SOI material is a kind of good optical waveguide material, when waveguide device is made after the oxidation of top layer silicon upper surface as covering.From present optic communication device need, with SOI top material layer silicon thickness thickness requirement is arranged as optical communication, generally need more than 5 μ.The method for preparing the SOI material has multiple, the bonding and wafer thinning technology is arranged and the annotating oxygen and isolate SIMOX (Separation by implantation of oxygen) of comparative maturity.Can prepare the very thick SOI material of top layer silicon with the bonding and wafer thinning method, top layer silicon thickness can be controlled on request, but the top layer silicon thickness evenness is difficult to control during attenuate, thereby the interface planarization can not guarantee on the top layer silicon, can increase optical transmission loss, and this is disadvantageous [Li Jinhua to making waveguide device, Lin Chenglu, G.T.Reed etc., silicon bonding SOI slab guide is explored, the optics journal, Vol, 14, No.2,1994p169～172].SIMOX technology is to be injected into the silicon chip surface layer by energetic oxygen ions, makes the oxygen of injection fully combine the buried oxide that forms insulation with silicon through high annealing then.Owing to the restriction of annealing conditions, buried oxide and Si bed boundary are relatively poor in the SOI material of preparation in the initial manufacture craft, and the top layer silicon defect concentration is up to 10
7/ cm
2Magnitude [Sadao Nakashima, Katsutoshi Izumi, Analysis ofburied oxide layer formation and mechanism of threading dislocation generationin the substoichiometric oxygen dose region, J.Mater.Res., Vol.8, No.3, Mar1993, p523～534].Through the research of injection, annealing process for a long time, at present can the good SOI disk of processability.But because the restriction of energy in the injection technology, SOI disk top layer silicon thickness with the SIMOX prepared is too thin, be generally less than 0.5 μ, be difficult to be used for making fiber waveguide device direct and the optical fibre device coupling, for overcoming this difficult point, whether can manage to increase the top layer silicon thickness of SOI material, make ridge waveguide so that the coupling of realization and optical fibre device.Purpose of the present invention is exactly in order to solve the too thin problem of this SOI top material layer silicon.
Summary of the invention
The present invention overcomes difficult point proposition a kind of method for preparing thick film SOI material in existence ground in the prior art.It is characterized in that utilizing the SOI material of SIMOX technology preparation as substrate, vapor phase epitaxial growth monocrystalline silicon layer on its top layer silicon, can obtain the second best in quality thick film SOI material, the last interface of top layer silicon is all very smooth with following interface (promptly with the buried oxide interface), and the thickness of top layer silicon can be controlled as required, as shown in Figure 1.
The technical scheme that the present invention realizes:
1.SOI substrate cleans with semiconductor standard cleaning technology before putting into epitaxial furnace;
2. use HCl gas at 1200～1220 ℃ of etched substrate 0.5-1 minutes, to remove the substrate surface oxide layer;
3. the SOI substrate is used H before the epitaxial deposition when high temperature (depositing temperature)
2Toasted 0.5～1.5 hour, and, also can remove surface oxide layer residual in the step 2 simultaneously to improve the substrate surface situation.The SOI substrate surface for roughness that SIMOX technology is made is bigger, has a lot of pittings, and outer delaying can cause a lot of defectives on this substrate, passes through H
2Behind the high-temperature baking because of the oxide layer on surface can with H
2Be removed after the reaction, surface appearance can be significantly improved simultaneously, and pitting has originally disappeared, and it is very smooth that the surface becomes.
4. when epitaxial growth, can adopt SiCl
4, SiHCl
3, SiH
2Cl
2Or SiH
4Carry out epitaxial growth as the silicon source, select suitable doped source to prepare n or p type epitaxial loayer and intrinsic epitaxial loayer as required, as be the PH that the outer time-delay of n type can feed dilution
3, prepare the p type equally and delay time outward, then feed the B of dilution
2H
6Course of reaction when its reaction principle can have following four kinds of high temperature:
SiCl
4+ 2H
2→ Si+4HCl (1150～1200 ℃ of temperature)
2SiHCl
3+ 2H
2→ 2Si+6HCl (temperature I100～1150 ℃)
SiH
2Cl
2→ Si+2HCl (1050～1150 ℃ of temperature)
SiH
4→ Si+2H
2(1000～1100 ℃ of temperature)
5. control the epitaxial growth time to obtain required SOI top layer silicon thickness according to deposition rate, deposition rate deposition quality in 0.3～0.8 μ m/min scope is better, when being used for making fiber waveguide thickness at 5～10 μ, comparatively suitable.It is fixed that epitaxial growth temperature and time come according to the silicon source of selecting for use, and temperature is 1000～1200 ℃ of scopes, and the epitaxial growth time needs 6～15 minutes approximately.
The vapour phase epitaxy of being utilized among the present invention is a kind of very ripe technology, SOI material that characteristics of the present invention are to adopt the preparation of SIMOX technology prepares thick film SOI material as substrate, the top layer silicon thickness of material can be controlled according to the device needs, can solve the not enough problem of SOI top material layer silicon thickness that only prepares, and the top layer silicon surface smoothness is better than the SOI material with the preparation of bonding and wafer thinning method with the SIMOX technology.The present invention is an epitaxial growth monocrystalline silicon layer on the SOI substrate, with with common silicon chip as substrate epitaxial growth difference to some extent, the SOI substrate is subjected to the influence of SIMOX technology, surface appearance is compared with common silicon chip and is had more defective and metal contamination etc., the whole degree in surface is also a little than body silicon difference, these growths that all will externally delay time monocrystalline silicon layer have significant effects, the single crystalline layer quality of growth not as under the same terms on common silicon chip epitaxially grown monocrystalline silicon layer.Therefore before extension, the SOI substrate is handled to improve surface appearance, to obtain high-quality epitaxy single-crystal silicon layer.Adopt H under the high temperature among the present invention
2The way of baking is improved surface condition, handles the back substrate surface through this method and becomes smooth, the SOI substrate surface H of the SIMOX of being technology preparation shown in Figure 2
2Situation of change before and after the baking, the substrate surface evenness is improved can reduce generation of defects in the epitaxial process, can obtain the measured epitaxial single crystal layer of matter.This method is compared with the SOI disk of bonding and wafer thinning method preparation, and the profile pattern of the silicon single crystal layer on the insulating barrier is good, and it is very favorable that this point reduces interface loss when propagating in silicon layer for light.With each thick film soI material of this method system, except that substrate processing, utilization be ripe silicon epitaxy process, be to realize easily.
Description of drawings
Single ' the crystal silicon schematic diagram of Fig. 1 (a) SOI substrate epitaxial growth
(b) thick film SOI material after the epitaxial growth.
The SOI substrate surface AFM photo of Fig. 2 (a) SIMOX technology preparation
(b) the SOI substrate surface of SIMOx technology preparation is through high temperature H
2Baking back AFM photo.
The thick film SOI material cross section electromicroscopic photograph that Fig. 3 grows with SO worker's substrate epitaxial.
Among the figure:
1-body silicon, 2-buried oxide, 3-substrate top layer silicon (epitaxial substrate), the silicon of 4-desire deposition (or doping) atom, 5-epitaxially grown monocrystalline silicon layer, Bulk-Si are body silicon, Epi-Si is a silicon epitaxial layers.
Concrete enforcement. mode
Embodiment 1
Utilize the full dosage SOI material of SIMOX prepared to carry out the epitaxial growth thick film SOI material as substrate.The SOI substrate parameters, P type (100), resistivity 10～20 Ω cm, the about 400nm of buried oxide thickness, the about 200nm of top layer silicon thickness; In cylinder epitaxial furnace, adopt SiCl
4As the silicon source, epitaxial growth temperature is 1180 ℃, uses H under this temperature
2Toast and begin epitaxial growth after 1 hour, the deposition rate of delaying time outward is 0.7～0.8 μ m/min, and 10 minutes time, outer time-delay is not mixed, preparation be intrinsic SOI epitaxial wafer.Fig. 3 is this thick film SOI material cross section transmission electron microscope photo of preparation.About 8 μ of epitaxy layer thickness.
Utilize the full dosage SOI material of SIMOX prepared to carry out the epitaxial growth thick film SOI material as substrate.What this example prepared is N type epitaxial wafer, and time-delay outside feeds PH
3As doped source, all the other conditions are identical with embodiment 1.Epitaxy layer thickness is about 8 μ m.
Embodiment 3
Utilize the full dosage SOI material of SIMOX prepared to carry out the epitaxial growth thick film SOI material as substrate.What this example prepared is P type epitaxial wafer, and time-delay outside feeds B
2H
6As doped source, select SiHCl for use
3As the silicon source, epitaxial growth temperature is 1100 ℃, and all the other conditions are identical with embodiment 1, the about 7.4 μ m of epitaxy layer thickness.
Claims (5)
1, the preparation method of silicon materials on a kind of insulating thick film layer, the SOI material that utilizes the SIMOX prepared adopts SiCl as substrate
4Or SiHCl
3Be the silicon source, carry out epitaxial growth, it is characterized in that substrate cleans the back and use 1200-1220 ℃ of etched substrate of HCl gas 0.5～1 minute earlier before epitaxial growth, remove the substrate surface oxide layer; The SOI substrate is used H under growth temperature then
2Remaining surface oxide layer is removed in gas baking 0.5～1 hour; 1000～12000 ℃ of temperature during epitaxial growth, growth rate 0.3～0.8 μ m/min.
2,, it is characterized in that epitaxial growth is that the doped source of selecting prepares n type or p type epitaxial loayer by the preparation method of silicon materials on the described insulating thick film layer of claim 1.
3, state the preparation method of silicon materials on the insulating thick film layer by claim 2, feed the PH of dilution when it is characterized in that preparing n type epitaxial loayer
3Preparation P type is delayed time outward and is fed the B of dilution
2H
6Doped source.
4, the preparation method of silicon materials on the described insulating thick film layer of claim 1, its feature is at epitaxial silicon layer thickness 5～10 μ m, and sedimentation time is 6～15 minutes.
5,, it is characterized in that epitaxial growth is to select plain intrinsic epitaxial loayer by the preparation method of silicon materials on the described insulating thick film layer of claim 1.
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| CNB031158277A CN100342492C (en) | 2003-03-14 | 2003-03-14 | Preparation for silicon material on thick film insulative layers |
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|---|---|---|---|
| CNB031158277A CN100342492C (en) | 2003-03-14 | 2003-03-14 | Preparation for silicon material on thick film insulative layers |
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|---|---|
| CN1440052A CN1440052A (en) | 2003-09-03 |
| CN100342492C true CN100342492C (en) | 2007-10-10 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100401473C (en) * | 2003-10-16 | 2008-07-09 | 东京毅力科创株式会社 | Method for forming silicon extended layer |
| EP2256786A1 (en) * | 2004-01-15 | 2010-12-01 | Japan Science and Technology Agency | Process for producing monocrystal thin film and monocrystal thin film device |
| CN101302648B (en) * | 2008-01-28 | 2010-06-16 | 中国电子科技集团公司第五十五研究所 | Gallium nitride thin film epitaxial growth structure and method |
| CN101872772B (en) * | 2010-06-08 | 2011-08-31 | 杭州电子科技大学 | Thick film SOI material for lateral high-voltage device and intelligent power integrated circuit |
| CN102140680A (en) * | 2011-05-10 | 2011-08-03 | 青岛铝镓光电半导体有限公司 | Method for preparing gallium nitride single crystal |
| CN102412124A (en) * | 2011-09-30 | 2012-04-11 | 上海晶盟硅材料有限公司 | Method for producing novel substrate, epitaxial wafer and semiconductor device |
| CN103165419B (en) * | 2011-12-09 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | The growing method of zero defect selective epitaxial |
| CN102570312A (en) * | 2011-12-26 | 2012-07-11 | 南京邮电大学 | Hanging resonance photonic device based on SOI material, and preparation method of same |
| CN102790007A (en) * | 2012-07-24 | 2012-11-21 | 沈阳硅基科技有限公司 | Method for preparing TM-SOI (Thick-Membrane Silicon-On-Insulator) silicon chip |
| CN102944911B (en) * | 2012-11-21 | 2016-07-13 | 清华大学 | A kind of fiber waveguide and preparation method thereof |
| CN111199882A (en) * | 2020-01-13 | 2020-05-26 | 南京国盛电子有限公司 | Wafer epitaxial manufacturing method with SOI as substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110802A (en) * | 1994-05-18 | 2000-08-29 | Commissariat A L'energie Atomique | Process for producing a structure with a low dislocation density comprising an oxide layer buried in a semiconductor substrate |
| JP2001085649A (en) * | 1999-09-16 | 2001-03-30 | Mitsubishi Materials Silicon Corp | Soi wafer and fabrication method thereof |
| JP2001110739A (en) * | 1999-10-08 | 2001-04-20 | Sumitomo Metal Ind Ltd | Simox substrate and manufacturing method therefor |
| EP1102314A2 (en) * | 1999-11-17 | 2001-05-23 | Denso Corporation | Method for manufacturing a SOI substrate |
-
2003
- 2003-03-14 CN CNB031158277A patent/CN100342492C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110802A (en) * | 1994-05-18 | 2000-08-29 | Commissariat A L'energie Atomique | Process for producing a structure with a low dislocation density comprising an oxide layer buried in a semiconductor substrate |
| JP2001085649A (en) * | 1999-09-16 | 2001-03-30 | Mitsubishi Materials Silicon Corp | Soi wafer and fabrication method thereof |
| JP2001110739A (en) * | 1999-10-08 | 2001-04-20 | Sumitomo Metal Ind Ltd | Simox substrate and manufacturing method therefor |
| EP1102314A2 (en) * | 1999-11-17 | 2001-05-23 | Denso Corporation | Method for manufacturing a SOI substrate |
Non-Patent Citations (1)
| Title |
|---|
| 硅键合SOI平面光波导探索 李金华，光学学报，第14卷第2期 1994 * |
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